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GB2447381A - Methods and apparatus for downstream dissociation of gases - Google Patents

Methods and apparatus for downstream dissociation of gases

Info

Publication number
GB2447381A
GB2447381A GB0811517A GB0811517A GB2447381A GB 2447381 A GB2447381 A GB 2447381A GB 0811517 A GB0811517 A GB 0811517A GB 0811517 A GB0811517 A GB 0811517A GB 2447381 A GB2447381 A GB 2447381A
Authority
GB
United Kingdom
Prior art keywords
gas
downstream
chamber
gases
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0811517A
Other versions
GB0811517D0 (en
GB2447381B (en
Inventor
Jack J Schuss
William Holber
John T Summerson
Susan C Trulli
Weiguo Zhang
Xing Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Instruments Inc
Original Assignee
MKS Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MKS Instruments Inc filed Critical MKS Instruments Inc
Publication of GB0811517D0 publication Critical patent/GB0811517D0/en
Publication of GB2447381A publication Critical patent/GB2447381A/en
Application granted granted Critical
Publication of GB2447381B publication Critical patent/GB2447381B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method and apparatus for activating and dissociating gases involves generating an activated gas (134) with a plasma(132) located in a chamber(108). A downstream gas input (176) is positioned relative to an output (172) of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas (152) does not substantially interact with an interior surface of the chamber.
GB0811517A 2005-12-23 2006-12-15 Methods and apparatus for downstream dissociation of gases Expired - Fee Related GB2447381B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75378805P 2005-12-23 2005-12-23
PCT/US2006/048120 WO2007075509A2 (en) 2005-12-23 2006-12-15 Methods and apparatus for downstream dissociation of gases

Publications (3)

Publication Number Publication Date
GB0811517D0 GB0811517D0 (en) 2008-07-30
GB2447381A true GB2447381A (en) 2008-09-10
GB2447381B GB2447381B (en) 2010-02-24

Family

ID=38038700

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0811517A Expired - Fee Related GB2447381B (en) 2005-12-23 2006-12-15 Methods and apparatus for downstream dissociation of gases

Country Status (6)

Country Link
JP (1) JP2009521783A (en)
KR (1) KR20080077642A (en)
CN (1) CN101461029B (en)
DE (1) DE112006003519T5 (en)
GB (1) GB2447381B (en)
WO (1) WO2007075509A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009085672A2 (en) 2007-12-21 2009-07-09 Lam Research Corporation Fabrication of a silicon structure and deep silicon etch with profile control
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
JP2011077378A (en) * 2009-09-30 2011-04-14 Ulvac Japan Ltd Method and apparatus for processing substrate
JP5651323B2 (en) * 2009-11-09 2015-01-07 富士機械製造株式会社 Plasma processing apparatus and plasma processing method
US8282906B2 (en) 2009-12-23 2012-10-09 3M Innovative Properties Company Remote plasma synthesis of metal oxide nanoparticles
US10232324B2 (en) * 2012-07-12 2019-03-19 Applied Materials, Inc. Gas mixing apparatus
AU2015207672B2 (en) 2014-01-15 2016-08-04 Gallium Enterprises Pty Ltd Apparatus and method for the reduction of impurities in films
CN113196444B (en) 2018-12-20 2024-07-02 应用材料公司 Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber
CN111188027B (en) * 2020-02-12 2021-08-03 南京大学 A kind of chemical vapor deposition equipment and film forming method
WO2024227559A1 (en) * 2023-05-03 2024-11-07 Asml Netherlands B.V. Protective device for a vacuum seal

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
US5236747A (en) * 1990-07-06 1993-08-17 Plasmametal Process for metallizing a surface
US5423942A (en) * 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20020072244A1 (en) * 2000-12-07 2002-06-13 Agarwal Vishnu K. Photo-assisted remote plasma apparatus and method
WO2006060827A2 (en) * 2004-12-03 2006-06-08 Mks Instruments, Inc Methods and apparatus for downstream dissociation of gases

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284340A (en) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2002158261A (en) * 2000-11-20 2002-05-31 Asuriito Fa Kk Gas supply method and box using it
JP2003218044A (en) * 2002-01-22 2003-07-31 Crystage Co Ltd Remote plasma treatment apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
US5236747A (en) * 1990-07-06 1993-08-17 Plasmametal Process for metallizing a surface
US5423942A (en) * 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20020072244A1 (en) * 2000-12-07 2002-06-13 Agarwal Vishnu K. Photo-assisted remote plasma apparatus and method
WO2006060827A2 (en) * 2004-12-03 2006-06-08 Mks Instruments, Inc Methods and apparatus for downstream dissociation of gases

Also Published As

Publication number Publication date
GB0811517D0 (en) 2008-07-30
CN101461029A (en) 2009-06-17
WO2007075509A3 (en) 2007-09-20
GB2447381B (en) 2010-02-24
JP2009521783A (en) 2009-06-04
CN101461029B (en) 2011-03-30
DE112006003519T5 (en) 2009-01-02
WO2007075509A2 (en) 2007-07-05
KR20080077642A (en) 2008-08-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20241215