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WO2005095670A3 - Remote chamber methods for removing surface deposits - Google Patents

Remote chamber methods for removing surface deposits Download PDF

Info

Publication number
WO2005095670A3
WO2005095670A3 PCT/US2005/010691 US2005010691W WO2005095670A3 WO 2005095670 A3 WO2005095670 A3 WO 2005095670A3 US 2005010691 W US2005010691 W US 2005010691W WO 2005095670 A3 WO2005095670 A3 WO 2005095670A3
Authority
WO
WIPO (PCT)
Prior art keywords
surface deposits
removing surface
remote chamber
chamber methods
remote
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/010691
Other languages
French (fr)
Other versions
WO2005095670A2 (en
Inventor
Herbert Harold Sawin
Bo Bai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co, Massachusetts Institute of Technology filed Critical EI Du Pont de Nemours and Co
Priority to BRPI0508204-8A priority Critical patent/BRPI0508204A/en
Priority to EP05734780A priority patent/EP1733071A2/en
Priority to JP2007505281A priority patent/JP2007530792A/en
Publication of WO2005095670A2 publication Critical patent/WO2005095670A2/en
Publication of WO2005095670A3 publication Critical patent/WO2005095670A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote chamber to the surface deposits.
PCT/US2005/010691 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits Ceased WO2005095670A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
BRPI0508204-8A BRPI0508204A (en) 2004-03-24 2005-03-24 method of removing deposits from a surface
EP05734780A EP1733071A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
JP2007505281A JP2007530792A (en) 2004-03-24 2005-03-24 Remote chamber method for removing surface deposits

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64083304P 2004-12-30 2004-12-30
US64044404P 2004-12-30 2004-12-30
US60/640,444 2004-12-30
US60/640,833 2004-12-30

Publications (2)

Publication Number Publication Date
WO2005095670A2 WO2005095670A2 (en) 2005-10-13
WO2005095670A3 true WO2005095670A3 (en) 2006-05-04

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 Ceased WO2005098086A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
PCT/US2005/010691 Ceased WO2005095670A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
PCT/US2005/010693 Ceased WO2005090638A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 Ceased WO2005098086A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010693 Ceased WO2005090638A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Country Status (6)

Country Link
EP (3) EP1737998A2 (en)
JP (3) JP2007531288A (en)
KR (3) KR20070037434A (en)
BR (3) BRPI0508214A (en)
TW (3) TWI281715B (en)
WO (3) WO2005098086A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
WO2007070116A2 (en) * 2005-08-02 2007-06-21 Massachusetts Institute Of Technology Remote chamber method using sulfur fluoride for removing surface deposits from the interior of a cvd /pecvd- plasma chamber
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
EP2934775B1 (en) * 2012-12-18 2021-03-17 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (en) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 Plasma cleaning method and plasma cleaning apparatus
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
KR102476934B1 (en) * 2013-12-30 2022-12-14 더 케무어스 컴퍼니 에프씨, 엘엘씨 Chamber cleaning and semiconductor etching gases
WO2020137528A1 (en) * 2018-12-25 2020-07-02 昭和電工株式会社 Method for removing deposits and method for forming film
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
EP3954804A1 (en) * 2020-08-14 2022-02-16 Siltronic AG Device and method for depositing a layer of semiconductor material on a substrate wafer
CN116145106B (en) * 2023-02-21 2024-12-24 苏州鼎芯光电科技有限公司 Cleaning method for semiconductor coating process chamber

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP1304731A1 (en) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Method of cleaning cvd device and cleaning device therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP1304731A1 (en) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Method of cleaning cvd device and cleaning device therefor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ALLGOOD C ET AL: "Evaluation of octafluorocyclobutane as a chamber clean gas in a plasma-enhanced silicon dioxide chemical vapor deposition reactor", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 150, no. 2, 2003, pages G122 - G126, XP002280013, ISSN: 0013-4651 *
OH C H ET AL: "Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry", SURFACE & COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 171, no. 1-3, 1 July 2003 (2003-07-01), pages 267 - 272, XP002362634, ISSN: 0257-8972 *

Also Published As

Publication number Publication date
EP1737998A2 (en) 2007-01-03
JP2007530792A (en) 2007-11-01
BRPI0508214A (en) 2007-07-17
EP1733072A2 (en) 2006-12-20
KR20070040748A (en) 2007-04-17
TWI284929B (en) 2007-08-01
TW200623240A (en) 2006-07-01
TW200623251A (en) 2006-07-01
TWI281714B (en) 2007-05-21
WO2005090638A9 (en) 2006-01-26
BRPI0508204A (en) 2007-07-17
KR20070043697A (en) 2007-04-25
JP2007531289A (en) 2007-11-01
WO2005090638A8 (en) 2006-11-16
WO2005095670A2 (en) 2005-10-13
WO2005098086A2 (en) 2005-10-20
BRPI0508205A (en) 2007-07-17
EP1733071A2 (en) 2006-12-20
WO2005090638A3 (en) 2006-04-13
JP2007531288A (en) 2007-11-01
TW200623281A (en) 2006-07-01
TWI281715B (en) 2007-05-21
WO2005098086A3 (en) 2006-05-04
KR20070037434A (en) 2007-04-04
WO2005090638A2 (en) 2005-09-29

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