TW200411167A - Detection method and apparatus - Google Patents
Detection method and apparatus Download PDFInfo
- Publication number
- TW200411167A TW200411167A TW92119559A TW92119559A TW200411167A TW 200411167 A TW200411167 A TW 200411167A TW 92119559 A TW92119559 A TW 92119559A TW 92119559 A TW92119559 A TW 92119559A TW 200411167 A TW200411167 A TW 200411167A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoluminescence
- semiconductor structure
- semiconductor
- scope
- image
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 238000005424 photoluminescence Methods 0.000 claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 claims abstract description 35
- 230000004044 response Effects 0.000 claims abstract description 24
- 238000003908 quality control method Methods 0.000 claims abstract description 20
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 230000005284 excitation Effects 0.000 claims abstract description 5
- 238000004458 analytical method Methods 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 23
- 238000013507 mapping Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000004020 luminiscence type Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000013500 data storage Methods 0.000 claims description 4
- 230000007717 exclusion Effects 0.000 claims description 4
- 230000000007 visual effect Effects 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 238000012732 spatial analysis Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 230000004936 stimulating effect Effects 0.000 claims 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000000246 remedial effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 70
- 230000007547 defect Effects 0.000 description 38
- 238000005516 engineering process Methods 0.000 description 34
- 238000011109 contamination Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008774 maternal effect Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000013442 quality metrics Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0216622A GB0216622D0 (en) | 2002-07-17 | 2002-07-17 | Detection method and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200411167A true TW200411167A (en) | 2004-07-01 |
Family
ID=9940657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92119559A TW200411167A (en) | 2002-07-17 | 2003-07-17 | Detection method and apparatus |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU2003281077A1 (fr) |
| GB (1) | GB0216622D0 (fr) |
| TW (1) | TW200411167A (fr) |
| WO (1) | WO2004008119A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI391645B (zh) * | 2005-07-06 | 2013-04-01 | Nanometrics Inc | 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007057011B4 (de) * | 2007-11-23 | 2011-04-28 | Pi Photovoltaik-Institut Berlin Ag | Erfassungsvorrichtung und Verfahren zum Erfassen einer Beschädigung einer Solarzelle mittels Photolumineszenz |
| DE102010011066B4 (de) * | 2010-03-11 | 2020-10-22 | Pi4_Robotics Gmbh | Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung |
| WO2013067573A1 (fr) * | 2011-11-07 | 2013-05-16 | Bt Imaging Pty Ltd | Classification et tri de plaquette pour la fabrication de cellules photovoltaïques |
| JP6296001B2 (ja) * | 2015-05-20 | 2018-03-20 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法及び評価方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4571685A (en) * | 1982-06-23 | 1986-02-18 | Nec Corporation | Production system for manufacturing semiconductor devices |
| GB9618897D0 (en) * | 1996-09-10 | 1996-10-23 | Bio Rad Micromeasurements Ltd | Micro defects in silicon wafers |
| GB9803842D0 (en) * | 1998-02-25 | 1998-04-22 | Shin Etsu Handotai Europ Ltd | Semiconductor wafer inspection apparatus |
-
2002
- 2002-07-17 GB GB0216622A patent/GB0216622D0/en not_active Ceased
-
2003
- 2003-07-14 WO PCT/GB2003/003045 patent/WO2004008119A1/fr not_active Ceased
- 2003-07-14 AU AU2003281077A patent/AU2003281077A1/en not_active Abandoned
- 2003-07-17 TW TW92119559A patent/TW200411167A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI391645B (zh) * | 2005-07-06 | 2013-04-01 | Nanometrics Inc | 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003281077A1 (en) | 2004-02-02 |
| GB0216622D0 (en) | 2002-08-28 |
| WO2004008119A1 (fr) | 2004-01-22 |
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