RU2263367C1 - Method for manufacturing gas panel hardware unit - Google Patents

Abstract

FIELD: electronic engineering; gas panel manufacture.

SUBSTANCE: proposed method includes formation of electrode distance in gas panel cells by generating dielectric matrix measuring 0.25 - 0.75 of electrode distance in height followed by applying parallel separating dielectric members onto this matrix.

EFFECT: enhanced uniformity of electrode distance in gas panel cells.

1 cl, 1 dwg

Description

The invention relates to electronic equipment and can be used in the manufacture of gas discharge indicator panels (GUI).

A known method of manufacturing a block of reinforcement of the ISU, in which the electrodes are first applied to the dielectric plate by screen printing, then a multilayer dielectric coating and a phosphor coating on the electrodes (anodes) [US patent No. 4023876, class. 316-9, 1977].

The disadvantages of this method include the layering of coatings, which leads to high complexity and technical complexity of manufacture.

A known method of manufacturing a block of reinforcement of the ISU, including the formation on the dielectric plate of the first conductors of the separation of dielectric elements by screen printing and phosphor elements [application of France No. 2211744, class. H01J 17/49, 1985].

The disadvantage of this method is that in the manufacture of a GUI reinforcement block with wire electrodes, the latter in the area of the dielectric separation elements made by screen printing are not completely covered by dielectric paste, as a result of which reliable insulation of the GUI cells is not provided.

Closest to the proposed method is a method of manufacturing an ISU reinforcement block, which consists in forming a first dielectric matrix and phosphor elements on a dielectric plate, forming a second dielectric matrix on the first dielectric matrix with grooves into which the first conductors are wound, forming a third dielectric matrix on the second dielectric matrix winding the second conductors orthogonally to the first conductors [RF patent No. 2214017, cl. H01J 9/02, 9/18, 2003 - prototype].

This method allows the manufacture of ISU with cells that are reliably isolated from each other, but does not provide a given interelectrode distance in the ISU cells.

The objective of the invention is to provide a method of manufacturing a block of reinforcement of the ISU, providing the formation of a given interelectrode distance in the ISU cells.

The specified technical effect in the implementation of the invention is achieved by the fact that in the known method of manufacturing the ISU reinforcement block, which consists in forming a first dielectric matrix and phosphor elements on a dielectric plate, forming a second dielectric matrix with grooves in which the first conductors are wound on the first dielectric matrix, forming the second dielectric matrix of the third dielectric matrix, winding the second conductors orthogonally to the first conductors, on the third An electric matrix with a thickness of 0.25–0.75 values of the interelectrode distance is applied parallel to the first conductors with separating dielectric elements forming an interelectrode distance with the third dielectric matrix, and second conductors are wound around the separating dielectric elements.

The formation of the interelectrode distance by alternately applying a matrix structure with a thickness of 0.25 ÷ 0.75 interelectrode distance and parallel dividing dielectric elements allows you to get the ISU cells with the same interelectrode distances.

The analysis of the prior art by the applicant, including a search by patent and scientific and technical sources of information and identification of sources containing information about analogues of the claimed invention, allows us to establish that the applicant has not found an analogue characterized by features identical to those of the claimed invention, and a definition from the list of identified analogues the prototype as the closest in the totality of the features of the analogue revealed a set of essential in relation to the applicant sees those the clinical result of the distinguishing features in the claimed subject matter set forth in the claims.

Therefore, the claimed invention meets the requirement of "novelty."

To verify the conformity of the claimed invention to the requirements of the inventive step, an additional search was carried out for known solutions in order to identify features that match the distinctive features of the claimed invention, the results of which show that the claimed invention does not explicitly follow from the prior art, as it has not been identified technical solutions in which a high uniformity of the interelectrode distance in the ISU cells would be ensured due to the fact that the interelectrode The battery distance in cells formed by forming the matrix structure and parallel dielectric separating elements, the thickness of which is selected according to a predetermined relation.

Therefore, the claimed invention meets the requirement of "inventive step".

The invention is illustrated in the drawing. The drawing shows the main stages of the manufacturing process of the block reinforcement of the ISU.

On the dielectric plate 1 (figure 1) form the first dielectric matrix 2 (drawing a). Then, phosphor elements 3 are sequentially formed on the dielectric plate 1 in the holes of the first dielectric matrix 2 and the second dielectric matrix 4 with grooves 5 on the first dielectric matrix 2 (Figure b). After that, in the grooves 5 of the second dielectric matrix 4, the first conductors 6 are wound (drawing c) and a third dielectric matrix 7 with a thickness of 0.25 ÷ 0.75 of the interelectrode distance is formed on the second dielectric matrix 4, on which separation dielectric elements are applied parallel to the first conductors 6 8, forming the interelectrode distance with the third dielectric matrix 7 (drawing g). Then, on the isolation dielectric elements 8, second conductors 9 are wound orthogonally to the first conductors 6 (drawing e).

The formation of the interelectrode distance in a known manner by the formation of dielectric matrices leads to a large spread of the interelectrode distance both within the same cell and throughout the display field. The consequence of this is that in the group of cells located along the conductors, for example, cathodes, dark bands are observed during the operation of the ISU at low and medium brightness of the cells. This disadvantage is caused by the fact that in these zones the cathodes are not completely covered by discharge glow due to an increase in the interelectrode distance.

The exclusion of the interelectrode distance spread is achieved due to the fact that when the interelectrode distance is formed, separation dielectric elements in the form of ribs are applied to the third dielectric matrix with a thickness of 0.25 ÷ 0.75 interelectrode distances, which are technologically simple to form with high accuracy.

It was experimentally established that the thickness of the third dielectric matrix used to form the interelectrode distance should be 0.25–0.75 of the interelectrode distance.

If the thickness of the third dielectric matrix is less than 0.25 of the interelectrode distance, then during the formation of the separating dielectric elements on the third dielectric matrix, conducted in the direction orthogonal to the first conductors, an "uncontrolled" hit of the dielectric paste on the phosphor elements occurs, which leads to their " pollution ”and, as a result, to a decrease in brightness and its large spread from cell to cell.

If the thickness of the third dielectric matrix is greater than 0.75 of the interelectrode distance when forming the interelectrode distance, then it is not possible to completely equalize the interelectrode distance in the cells with the GUI display field, as a result of which dark bars appear when the GUI operates in the low and medium brightness modes.

An example of a specific implementation.

On a fiberglass 200 × 200 × 3 mm in size, a first 0.06 mm thick die with holes of 2.5 × 2.5 mm in 3 mm increments of 64 × 64 elements is formed through a mesh stencil. Dielectric matrices and separating dielectric elements are made of paste, including powders of low-melting glass C82-3 and alunda in a ratio of 60: 40 and an organic binder based on ethyl cellulose in an amount of 20%. After drying the first dielectric matrix in its holes on the fiberglass form phosphors in the amount of 20%. After drying the first dielectric matrix in its holes on the fiberglass form phosphor elements with a thickness of 0.07 mm Then, on the first dielectric matrix, a second dielectric matrix 0.08 mm thick with grooves 0.08 mm deep and 1.7 mm long with a step of 3 mm in the direction of the first conductors is formed through a mesh stencil. The drying is carried out and the first conductors of 47 NHR wire are wound with a diameter of 0.12 mm so that 3 turns of wire are evenly located in each groove. Then, a third matrix with a thickness of 0.125 mm is also formed through mesh stencils and on it parallel to the first conductors the first dividing dielectric elements with a thickness of 0.125 mm are formed. Heat treatment is carried out at a temperature of 500 ° C and second conductors of 47 NHR wire with a diameter of 0.12 mm along one turn of the wire are wound onto the dielectric elements orthogonally to the first conductors, while the interelectrode distance is 0.25 mm.

In the ISU, including the reinforcement unit manufactured according to the specified method, the spread of the interelectrode distance in the cells and along the display field does not exceed 5 μm. There are no dark stripes during the operation of the ISU.

Thus, the proposed invention allows to create blocks of reinforcement of high-quality ISUs, thereby increasing the quality of ISUs made on their basis.

Claims (1)

A method of manufacturing an ISU reinforcement block, which consists in forming a first dielectric matrix and phosphor elements on a dielectric plate, forming a second dielectric matrix with grooves on the first dielectric matrix, into which the first conductors are wound, forming a third dielectric matrix on the second dielectric matrix, or winding the second conductors orthogonally with the first conductors, characterized in that on the third dielectric matrix with a thickness of 0.25 ÷ 0.75 values of the interelectrode distance the separating dielectric elements are formed parallel to the first conductors, forming the interelectrode distance with the third dielectric matrix, and the second conductors are wound on the separating dielectric elements.