JP4359847B2 - 低ｋ誘電体フィルムのための乾燥処理 - Google Patents
低ｋ誘電体フィルムのための乾燥処理 Download PDFInfo
- Publication number
- JP4359847B2 JP4359847B2 JP2004555813A JP2004555813A JP4359847B2 JP 4359847 B2 JP4359847 B2 JP 4359847B2 JP 2004555813 A JP2004555813 A JP 2004555813A JP 2004555813 A JP2004555813 A JP 2004555813A JP 4359847 B2 JP4359847 B2 JP 4359847B2
- Authority
- JP
- Japan
- Prior art keywords
- low
- substrate
- dielectric layer
- processing chamber
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001035 drying Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 33
- 239000000356 contaminant Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 8
- 238000006731 degradation reaction Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- 238000009489 vacuum treatment Methods 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 26
- 238000004380 ashing Methods 0.000 description 16
- 239000003989 dielectric material Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- -1 amine compounds Chemical class 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001404 mediated effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Solid Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/065,861 US20040099283A1 (en) | 2002-11-26 | 2002-11-26 | Drying process for low-k dielectric films |
| PCT/US2003/038019 WO2004049073A2 (fr) | 2002-11-26 | 2003-11-26 | Procede de sechage pour pellicules dielectriques a faible constante k |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006508535A JP2006508535A (ja) | 2006-03-09 |
| JP4359847B2 true JP4359847B2 (ja) | 2009-11-11 |
Family
ID=32323603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004555813A Expired - Fee Related JP4359847B2 (ja) | 2002-11-26 | 2003-11-26 | 低ｋ誘電体フィルムのための乾燥処理 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20040099283A1 (fr) |
| JP (1) | JP4359847B2 (fr) |
| WO (1) | WO2004049073A2 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
| US7060330B2 (en) * | 2002-05-08 | 2006-06-13 | Applied Materials, Inc. | Method for forming ultra low k films using electron beam |
| US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
| US20050250346A1 (en) | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
| US20060249175A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| US8039049B2 (en) * | 2005-09-30 | 2011-10-18 | Tokyo Electron Limited | Treatment of low dielectric constant films using a batch processing system |
| US7501355B2 (en) * | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
| US7598183B2 (en) * | 2006-09-20 | 2009-10-06 | Applied Materials, Inc. | Bi-layer capping of low-K dielectric films |
| US7964039B2 (en) * | 2007-09-07 | 2011-06-21 | Imec | Cleaning of plasma chamber walls using noble gas cleaning step |
| US10811370B2 (en) | 2018-04-24 | 2020-10-20 | Cree, Inc. | Packaged electronic circuits having moisture protection encapsulation and methods of forming same |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
| US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
| DE69012727T2 (de) * | 1989-03-31 | 1995-02-09 | Canon Kk | Verfahren zur herstellung eines polykristallinen filmes mittels chemischen dampfniederschlags. |
| CA2032763C (fr) * | 1990-12-20 | 2001-08-21 | Mitel Corporation | Prevention de la contamination du circuit de transit par desorption induite obtenue par decharge luminescente |
| US5290383A (en) * | 1991-03-24 | 1994-03-01 | Tokyo Electron Limited | Plasma-process system with improved end-point detecting scheme |
| US5498308A (en) * | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
| US5705232A (en) * | 1994-09-20 | 1998-01-06 | Texas Instruments Incorporated | In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing |
| US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
| KR100219562B1 (ko) * | 1996-10-28 | 1999-09-01 | 윤종용 | 반도체장치의 다층 배선 형성방법 |
| US6053687A (en) * | 1997-09-05 | 2000-04-25 | Applied Materials, Inc. | Cost effective modular-linear wafer processing |
| US20010051082A1 (en) * | 1997-09-05 | 2001-12-13 | Kirkpatrick Thomas I. | Cost effective modular-linear wafer processing |
| US5866945A (en) * | 1997-10-16 | 1999-02-02 | Advanced Micro Devices | Borderless vias with HSQ gap filled patterned metal layers |
| JPH11279773A (ja) * | 1998-03-27 | 1999-10-12 | Tomoo Ueno | 成膜方法 |
| US6021672A (en) * | 1998-09-18 | 2000-02-08 | Windbond Electronics Corp. | Simultaneous in-situ optical sensing of pressure and etch rate in plasma etch chamber |
| US6328809B1 (en) * | 1998-10-09 | 2001-12-11 | Scp Global Technologies, Inc. | Vapor drying system and method |
| US6610150B1 (en) * | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
| US6452275B1 (en) * | 1999-06-09 | 2002-09-17 | Alliedsignal Inc. | Fabrication of integrated circuits with borderless vias |
| US6235453B1 (en) * | 1999-07-07 | 2001-05-22 | Advanced Micro Devices, Inc. | Low-k photoresist removal process |
| US6281135B1 (en) * | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
| US6495825B1 (en) * | 1999-12-22 | 2002-12-17 | International Business Machines Corporation | Apparatus for photo exposure of materials with subsequent capturing of volatiles for analysis |
| US20010048867A1 (en) * | 2000-03-29 | 2001-12-06 | Lebar Technology, Inc. | Method and apparatus for processing semiconductor wafers |
| US6319809B1 (en) * | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
| JP4043705B2 (ja) * | 2000-09-27 | 2008-02-06 | 株式会社東芝 | 半導体装置の製造方法、ウェハ処理装置、及びウェハ保管箱 |
| US6720247B2 (en) * | 2000-12-14 | 2004-04-13 | Texas Instruments Incorporated | Pre-pattern surface modification for low-k dielectrics using A H2 plasma |
| US6303524B1 (en) * | 2001-02-20 | 2001-10-16 | Mattson Thermal Products Inc. | High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques |
| US6503840B2 (en) * | 2001-05-02 | 2003-01-07 | Lsi Logic Corporation | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning |
| JP3739325B2 (ja) * | 2001-09-20 | 2006-01-25 | 株式会社日立製作所 | 有機絶縁膜のエッチング方法 |
-
2002
- 2002-11-26 US US10/065,861 patent/US20040099283A1/en not_active Abandoned
-
2003
- 2003-11-26 WO PCT/US2003/038019 patent/WO2004049073A2/fr not_active Ceased
- 2003-11-26 JP JP2004555813A patent/JP4359847B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004049073A2 (fr) | 2004-06-10 |
| WO2004049073A3 (fr) | 2004-11-18 |
| JP2006508535A (ja) | 2006-03-09 |
| US20040099283A1 (en) | 2004-05-27 |
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