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ID21928A - Komposisi damar termoseting yang berguna sebagai penyekat pengisi bawah - Google Patents

Komposisi damar termoseting yang berguna sebagai penyekat pengisi bawah

Info

Publication number
ID21928A
ID21928A IDW990113A ID990113A ID21928A ID 21928 A ID21928 A ID 21928A ID W990113 A IDW990113 A ID W990113A ID 990113 A ID990113 A ID 990113A ID 21928 A ID21928 A ID 21928A
Authority
ID
Indonesia
Prior art keywords
component
semiconductor device
composition
circuit board
thermosetting resin
Prior art date
Application number
IDW990113A
Other languages
English (en)
Indonesian (id)
Inventor
Konarski Mark
Szcepaniak Zbigniew
Original Assignee
Loctite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Loctite Corp filed Critical Loctite Corp
Publication of ID21928A publication Critical patent/ID21928A/id

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/4007Curing agents not provided for by the groups C08G59/42 - C08G59/66
    • C08G59/4014Nitrogen containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01037Rubidium [Rb]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Epoxy Resins (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)
IDW990113A 1997-07-24 1998-07-22 Komposisi damar termoseting yang berguna sebagai penyekat pengisi bawah ID21928A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5359297P 1997-07-24 1997-07-24

Publications (1)

Publication Number Publication Date
ID21928A true ID21928A (id) 1999-08-12

Family

ID=21985312

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW990113A ID21928A (id) 1997-07-24 1998-07-22 Komposisi damar termoseting yang berguna sebagai penyekat pengisi bawah

Country Status (13)

Country Link
US (1) US6342577B1 (fr)
EP (1) EP0929592B1 (fr)
JP (1) JP2001506313A (fr)
KR (1) KR100571334B1 (fr)
CN (1) CN1197893C (fr)
AT (1) ATE320460T1 (fr)
AU (1) AU728193B2 (fr)
BR (1) BR9806065A (fr)
CA (1) CA2266314A1 (fr)
DE (1) DE69833865T2 (fr)
ID (1) ID21928A (fr)
RU (1) RU2195474C2 (fr)
WO (1) WO1999005196A1 (fr)

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US6548575B2 (en) 2000-12-13 2003-04-15 National Starch And Chemical Investment Holding Corporation High temperature underfilling material with low exotherm during use
JP3566680B2 (ja) * 2001-09-11 2004-09-15 富士通株式会社 半導体装置の製造方法
JP3866591B2 (ja) * 2001-10-29 2007-01-10 富士通株式会社 電極間接続構造体の形成方法および電極間接続構造体
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RU2447093C1 (ru) * 2011-01-19 2012-04-10 Открытое акционерное общество "Институт пластмасс имени Г.С. Петрова" Способ получения орто-крезолноволачной эпоксидной смолы и полимерная композиция на ее основе
CN102559119A (zh) * 2011-12-13 2012-07-11 北京海斯迪克新材料有限公司 一种具有良好流变稳定性的单组份环氧包封胶及制备方法
RU2492549C1 (ru) * 2012-03-20 2013-09-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Способ сборки трехмерного электронного модуля
JP6289366B2 (ja) * 2012-06-08 2018-03-07 株式会社Adeka 硬化性樹脂組成物、樹脂組成物、これらを用いてなる樹脂シート、及びこれらの硬化物
JP6202857B2 (ja) * 2013-04-02 2017-09-27 株式会社東芝 電気機器用コーティング材
RU2597916C2 (ru) * 2014-11-18 2016-09-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Полимерный матричный материал для кондиционирования низко- и среднеактивных отработанных ионообменных смол
KR102545337B1 (ko) 2015-03-31 2023-06-19 미츠비시 가스 가가쿠 가부시키가이샤 시안산에스테르 화합물, 그 화합물을 함유하는 경화성 수지 조성물 및 그 경화물
CN105356479B (zh) * 2015-11-13 2017-12-08 湖南大学 一种c型串联滤波式级联svg及其负序补偿控制方法
KR102246076B1 (ko) * 2015-11-17 2021-05-03 한국전자통신연구원 반도체 패키지의 제조 방법
US9988308B1 (en) * 2016-05-05 2018-06-05 Five Star Products, Inc. Epoxy based material and applications therefore
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Also Published As

Publication number Publication date
AU8595998A (en) 1999-02-16
EP0929592B1 (fr) 2006-03-15
EP0929592A4 (fr) 2000-09-13
AU728193B2 (en) 2001-01-04
KR20000068623A (ko) 2000-11-25
CN1237186A (zh) 1999-12-01
KR100571334B1 (ko) 2006-04-14
EP0929592A1 (fr) 1999-07-21
RU2195474C2 (ru) 2002-12-27
ATE320460T1 (de) 2006-04-15
WO1999005196A1 (fr) 1999-02-04
CN1197893C (zh) 2005-04-20
DE69833865T2 (de) 2006-10-05
BR9806065A (pt) 1999-08-31
CA2266314A1 (fr) 1999-02-04
JP2001506313A (ja) 2001-05-15
US6342577B1 (en) 2002-01-29
DE69833865D1 (de) 2006-05-11

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