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EP2507169A1 - Procédé d'extraction d'impuretés contenues dans du silicium - Google Patents

Procédé d'extraction d'impuretés contenues dans du silicium

Info

Publication number
EP2507169A1
EP2507169A1 EP10787448A EP10787448A EP2507169A1 EP 2507169 A1 EP2507169 A1 EP 2507169A1 EP 10787448 A EP10787448 A EP 10787448A EP 10787448 A EP10787448 A EP 10787448A EP 2507169 A1 EP2507169 A1 EP 2507169A1
Authority
EP
European Patent Office
Prior art keywords
silicon
halogen
impurities
halopolysilane
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10787448A
Other languages
German (de)
English (en)
Inventor
Norbert Auner
Christian Bauch
Sven Holl
Rumen Deltschew
Javad MOHSSENI
Gerd Lippold
Thoralf Gebel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spawnt Private SARL
Original Assignee
Spawnt Private SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43499339&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2507169(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Spawnt Private SARL filed Critical Spawnt Private SARL
Publication of EP2507169A1 publication Critical patent/EP2507169A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Definitions

  • the present invention relates to a method for removing impurities from silicon, in particular of metallic and / or non-metallic impurities, and a material used for this purpose, which contains a halogenpolysilane and / or a halide-containing silicon.
  • Metallurgical silicon in the sense of the method according to the invention comprises all Si quality grades which do not meet the purity criteria for semiconductor applications.
  • Metallurgical silicon or UMG silicon are not suitable because they contain relatively high concentra ⁇ ones of impurities which are un- desirable for this purpose and must be removed for the production of solar cells or applications in the electronics industry.
  • gaseous halogen sources can be used according to the prior art.
  • halogen gas, halogen-containing gas mixtures or gaseous halogen-containing compounds are introduced into the Si melt.
  • DE 3635064 C2 discloses a method for purifying silicon by treating a silicon melt with a a gas mixture comprising hydrogen chloride and / or halosilanes and a subsequent vacuum treatment at less than 0.1 mbar.
  • the implementation of such a technology is very complex, since the introduction of the halogen or the gaseous halogen-containing compounds must be carried out directly in the melt, which is usually done by tubes or special nozzles.
  • a homogeneous distribution of the halogen over the entire melt is therefore only possible to a limited extent.
  • the melt itself ie it can, for example, come to impurities that originate from the devices for gas introduction.
  • WO 2009/143825 A2 describes a process for purifying metallurgical silicon, in which solid halide-containing silicon is added to the metallurgical silicon, a melt being produced from the substances and the impurities being removed from the melt and precipitated in the form of Metal halides are removed.
  • the implementation of such a technology is dependent on the preparation of the necessary halide-containing silicon, which is usually made of halogenpolysilanes.
  • This halopolysilanes must be set with in comparison to the starting material significantly reduced halogen content (as well as volatile halosilanes with compared to the starting material increased halogen content) environmentally initially to a mate rial ⁇ .
  • the material thus obtained is the halide-containing silicon.
  • the object of the invention is to provide an improved process for the purification of silicon, which is simplified in particular compared to the prior art. This object is solved by the method for removing impurities from silicon and the material usable therefor according to the independent claims.
  • the dependent claims and the description teach advantageous wide Erbil ⁇ applications and embodiments.
  • halogen which may be partly replaced by hydrogen
  • a melt is then put forth ⁇ from the starting materials, wherein the impurities are removed from the mixture, particularly in the form of element halides.
  • step A) to be cleaned metallic silicon, as it has been described a ⁇ passage closer provided.
  • This Silici- order is heated in a step C), so that is formed generally egg ⁇ ne melt of silicon to be purified.
  • Be ⁇ already before heating can, to the to be cleaned silicon SiX be admixed with at least one halopolysilane the formula n; this admixture according to method step B), but can also take place during heating, or it may also Ha ⁇ logenpolysilan be added to the already molten silicon to be purified.
  • step C) then a reaction of the impurities with the at least one halopolysilane or with a decomposition product of at least one ⁇ halopolysilane.
  • a reaction between the impurity and the halopolysilane or its decomposition product is to be understood as meaning, in particular, that the impurities present in elemental form form a halide with the halogen of the polysilane or of the decomposition product, which is usually volatile and can therefore escape ,
  • the formation of a slag is frequently observed, in which then the halogen-containing impurities are present. This slag can then be removed from the surface of the molten silicon.
  • outgassing of the elemental halides formed can be observed.
  • the decomposition product of the halopolysilane is, in particular, silicon tetrahalide and hexahalogendisilane, which, as stated above, form during the thermal decomposition of polysilanes.
  • halopolysilane or "at least one halopolysilane” is mentioned, it is to be understood that the invention as ⁇ probably pure compounds for cleaning the contaminated silicon can be ciums used as mixtures Various ⁇ ner halopolysilanes.
  • the mixtures may contain different halogens; Often, however, only a single halogen will be included in the mixtures. As a rule, will - too due to the possible manufacturing process - often mixtures of halosilanes are used. Accordingly, when "halopolysilane” or “the at least one halopolysilane” is mentioned below, it should always be understood that it may be a mixture of halogenpolysilanes.
  • the Halogenpoly ⁇ at least one silane employed gradually converts to silicon said continuously release of halosilanes, in particular low molecular weight halosilanes such as S1X 4 and S1 2 X 6 is carried out.
  • halosilanes in particular low molecular weight halosilanes such as S1X 4 and S1 2 X 6
  • a cleaning action by the Halogenpolysi- lane takes place according to the invention therefore already in a tempera ⁇ tur Scheme, is still present in the silicon in solid form.
  • no or only a minor proportion of the material used in the starting material that is to say in particular, is produced by the production process according to the invention
  • the method according to the invention is suitable for purifying other metals, for example transition metals (for example titanium) or main group metals (for example aluminum) or else for removing nonmetallic impurities which can be due, for example, to dopants (for example boron, phosphorus or arsenic).
  • transition metals for example titanium
  • main group metals for example aluminum
  • dopants for example boron, phosphorus or arsenic
  • the halogen: silicon ratio of the halopolysilane used or the average halogen: silicon ratio of the mixture of halopolysilane is greater than 1: 1 and less than 2.5: 1. In particular, it is 1.5: 1 to 2.3: 1, for example 1.6: 1 to 2.25: 1.
  • the perhalogenated isomers of Pentasilans may be mentioned in particular, since this can no longer be distilled without decomposition and DEM according to a simple evaporation of the connection, for example, already adsorbed on the surface of a to-clean ⁇ constricting silicon particle can no longer be possible.
  • halogen: silicon ratio of 1.6: 1 is present in hexadecachlorodecanilane (which has an adamantane-like structure) and similar compounds.
  • Compounds or mixtures with the above ge ⁇ called halogen: Silicum ratios are produced as a rule simple and have on the other hand that they frequently be in liquid or viscous consistency or basic (for example by means of the correspondent exploding tetrahalosilanes such as SiCl 4 has the advantage, ) can be brought into Lö ⁇ solution.
  • the halogenpolysilanes according to the invention are able to completely or at least substantially completely wet or cover the particles of the silicon to be cleaned, and thus to a certain extent a layer of the "cleaning agent " can be formed on the silicon particles to be cleaned.
  • This is not possible with either gaseous or solid materials, as described in the prior art.
  • the conversion of the impurities into element halides is thus accelerated right from the start.
  • the impurities are often present at grain boundaries or other crystal defects that are reasonably easily accessible from the surface of a particle. Accordingly, even in the solid state, a reaction between the impurities and the halogenpolysilanes or the decomposition products formed therefrom can begin, since especially in the case of crystal defects, reactions in the solid state are particularly easily possible.
  • solutions or suspensions can be used in S 1X 4 , in which when suspending the Halogenpo ⁇ lysilans in the 2-fold amount by weight S 1X 4 (or alternatively in S 1 2 X 6 or S 1 3 X 8 or other Oligohalogensilanen or Oligohalogensilangemischen , in particular mixtures of compounds having up to 6 silicon atoms) at least 50% of the mass used are soluble.
  • Such solubility is usually achieved when halogen polysilanes having a halogen: silicon ratio of 1.4: 1, but at least 1.5: 1 is present.
  • the solvent used is the S1X 4 or oligohalosilane, which contains the same halogen as the halogenpolysilane to be dissolved.
  • the halogenpolysilanes according to the invention also contain hydrogen in addition to silicon and halogen.
  • the hydrogen content of these compounds will, as a rule, be relatively low and usually not more than 5 atomic%; Often the proportion will even be ⁇ 1%.
  • very often halogenpolysilanes (or halopolysilane mixtures) are used which have no
  • the hydrogen can her einsbe ⁇ dingt be contained in the halopolysilanes; however, it can also be deliberately introduced to some extent because certain impurities are somewhat easier to remove in the presence of hydrogen. This is due, inter alia, to the formation of HCl in the decomposition, which exerts an etching effect even at a lower temperature than do the chlorosilanes / -polysilanes. In general, all compounds mentioned in the context of the present application are subject to the usual purity levels.
  • the purity of a compound consisting of specific types of atoms or a Gemi ⁇ ULTRASONIC consisting of a plurality of such individual compounds is at least 99.5% by weight, often at least 99.95% and that the proportion of impurities in particular less than 10 ppm (where always wt .-% are meant).
  • plasma-chemically or thermally produced chloropolysilanes can serve as starting material.
  • Polysilanes prepared by plasma blending may in particular comprise halogenated polysilanes as pure compound or as a mixture of compounds each having at least one direct bond Si-Si, wherein the substituents consist of halogen or of halogen and hydrogen and wherein in the composition the atomic ratio substituent: silicon is at least 1: 1, where a. the H content of the polysilane is less than 2 atomic%, b. the polysilane almost no branched chains and
  • Containing rings wherein the content of Verzweigungsstel- len of the short-chain fraction, in particular of the summed on ⁇ proportion of perhalogenated derivatives of Neohexasilan, neopentasilane, Isotetrasilan, silane Isopenta- and Isohexasilan, is based on the total product mixture below 1%,
  • the content of branching sites is determined by integration of the 29 Si NMR signals for the tertiary and quaternary Si atoms.
  • the short-chain portion is the An ⁇ part of the halogenated polysilanes designates all silanes ne with up to six silicon atoms.
  • the proportion of perhalogenated short-chain silanes can be determined very quickly, if - as exemplified by the perchlorinated compounds - the procedure is as follows.
  • the range of from +23 ppm to -13 ppm in the 29 Si-NMR is integrated and subsequently the signals for tertiary and quarterly mentary Si-atoms (in particular in the primary and secondary signals ⁇ sondere silicon atoms to the fin ⁇ are) in the range from -18 ppm to -33 ppm and from -73 ppm to -93 ppm of the perchlorinated derivatives of the following compounds: neohexasilane, neopentasilane, isotetrasilane, isopentasilane and isohexasilane.
  • the ratio of the respective integrations I kU rz ketti g : I primary / secondary is less than 1: 100 with respect to the totalized integration for the respectively perchlorinated derivatives of neohexasilane, neopentasilane, isotetrasilane, isopentasilane and isohexasilane.
  • perhalogenated polysilanes which are as described in WO 2006/125425 A1, to which full reference is also made in terms of characterization and synthesis, wherein it should be noted that the higher Power density of the plasma used there, the proportion of branched compounds is usually greater than in the compounds / mixtures, which were prepared according to WO 2009/143823 A2.
  • Halopolysilanes thermally produced may be beispielswei ⁇ se halogenated polysilanes as a pure compound or as a Ge ⁇ mixture of compounds each having at least a direct bond Si-Si, the substituents being selected from halogen or halogen and hydrogen, and wherein in the enclo ⁇ men suffices the atomic ratio Substituent: silicon is at least 1: 1, where a. the polysilane consists of rings and chains with a high proportion of branching points, which is> 1% relative to the total product mixture,
  • the above prepared thermal or plasma-chemically halopolysilanes in particular due to the process, a certain thermal decomposition aufwei- sen how it may be intentionally Runaway ⁇ leads according to WO 2009/143825 A2.
  • halopolysilanes or Halogenpolysilangemische having a halogen: silicon ratio are present, which is lower than that of Hexadecahalogendeca- silane, so in particular in the range of 1.1: 1 to 1.5: 1 or 1.6: 1.
  • said compounds have better solubility in SiX 4, insbeson ⁇ particular SiCl 4, and usually also in Oligohalogensilanen than the halide-containing silicon, as described in WO
  • the chlorine content of a compound or a mixture is determined in the context of this application by complete digestion of the sample and subsequent titration of the chloride according to Mohr.
  • the contents of halogens other than chlorine can be determined by analogous methods.
  • the determination of the H content is carried out by integration of 1 H-NMR spectra using an internal standard and comparison of the integrals obtained at a known mixing ratio.
  • the halopolysilanes and the mole ⁇ compositions of the invention the average molecular weight of Halogenpolysilangemische be determined freezing point depressant overall. From the parameters mentioned, the halogen: silicon ratio can be determined.
  • a mixture comprising a powdery silicon and at least one halogeno-poised Lysilane comprises or consists of these two materials added.
  • any silicon can be used as pulverulent silicon.
  • a silicon to be purified in the context of this application.
  • Paste can be prepared, which can be subsequently added to solid or ge ⁇ molten contaminated silicon.
  • pure halogenpolysilanes as described above, can be achieved by means of such a paste, that the oxidation sensitivity of the halopolysilanes is reduced.
  • This effect may be due to the fact that the accessible surface of the halogenated Polysilans is reduced and thus the reaction with undesirable substances, such as water or water vapor, can be reduced substantially to the surface of the paste, but not on the Total amount of halogen polysilane.
  • the pulverized silicon and halopolysilane can first also be tempered. This then creates a non-plastic bulk material, which has a further reduced sensitivity to oxidation ⁇ .
  • a certain Ver ⁇ loss of halogen is recorded, based on the fact that the effect of temperature on the halopolysilane - low molecular weight silicon halides are gebil ⁇ det - as described above.
  • the added silicon content plays according to this Embodiment not matter for the formed empirical formula SiX n .
  • the at least one halopolysilane added in step B) is added in encapsulated form.
  • encapsulated form is to be understood in particular that the halopolysilane without
  • the encapsulation may consist in particular of silicon or this umfas ⁇ sen, since silicon is present in the melt in any case.
  • the silicon can in particular in elemental form as
  • the encapsulation contains or consists of quartz glass, in which case in addition to silicon ⁇ additionally or oxygen is introduced into the silicon melt to be purified.
  • the silica dioxides originating from the quartz glass then form a slag which is formed on the cleaned silicon floats and therefore can be easily removed or evaporated as silicon monoxide from the surface.
  • a mixing of the halopolysilane with the to be cleaned silicon can be effected in that the encapsulation of silicon melts itself, whereby only in this state, a distribution of the halopolysilane or the decomposition products meanwhile formed in the Silicon melt takes place, so that outgassing of decomposition products during the heating process does not occur in this case.
  • encapsulation in particular an encapsulation made of quartz glass, for example an ampoule
  • bursting in Silici ⁇ remelting because of the increased temperature of the Sili ⁇ ciumschmelze occurs a decomposition reaction of the Chlorpolysilans in ⁇ nerrenz the quartz glass ampoule and thus a positive pressure is produced, which the quartz glass ultimately can no longer withstand.
  • the present application also relates to a material which can be used in particular for the last-described alternative embodiments of the method according to the invention.
  • This material comprises a silicon halide compound, in particular a halopolysilane or a mixture of halopolysilanes, but may also comprise a halide-containing silicon, as described, for example, in WO
  • this material also contains a protective material against moisture.
  • the protective material against moisture may be in particular the silicon described above or also silicon dioxide.
  • one of the ⁇ -like material can gen vorlie- example in the form of a paste whose Oxidationssinterkeit is reduced because in contact with the surrounding surface of the halogen polysilane or the halide-containing silicon can be reduced.
  • an additional binder can be used for this purpose.
  • the material described above may be formed such that the moisture-proofing material encloses the silicon-halogen compounds in the manner of an encapsulation.
  • the protective material can thus form an ampoule in which the silicon-halogen
  • Such a vial may be made of Si approximately ⁇ Licium or comprise or consist of quartz glass or comprising this.
  • the above-mentioned silicon-halogen compounds can be brought into a storable form, in which the decomposition due to undesired media (such as water) can be reduced or prevented.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Catalysts (AREA)

Abstract

L'invention concerne un procédé d'extraction d'impuretés contenues dans du silicium, comportant les étapes suivantes : A) fourniture de silicium métallique contenant des impuretés; B) mélange du silicium à laver avec au moins un halogénopolysilane de formule SiXn, dans laquelle X est halogène pouvant être partiellement remplacé par de l'hydrogène et 1 < n < 2,5; C) chauffe du silicium à laver fourni de telle manière qu'il y a au moins partiellement réaction des impuretés avec le ou les halogénopolysilanes ou un produit de décomposition du ou des halogénopolysilanes, l'étape C) pouvant avoir lieu avant, pendant et/ou après l'étape B).
EP10787448A 2009-12-04 2010-12-06 Procédé d'extraction d'impuretés contenues dans du silicium Withdrawn EP2507169A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009056731A DE102009056731A1 (de) 2009-12-04 2009-12-04 Halogenierte Polysilane und Polygermane
PCT/EP2010/068974 WO2011067410A1 (fr) 2009-12-04 2010-12-06 Procédé d'extraction d'impuretés contenues dans du silicium

Publications (1)

Publication Number Publication Date
EP2507169A1 true EP2507169A1 (fr) 2012-10-10

Family

ID=43499339

Family Applications (7)

Application Number Title Priority Date Filing Date
EP10792879.8A Not-in-force EP2507172B1 (fr) 2009-12-04 2010-12-06 Procede de preparation d'un polygermasilane hydrogene et polygermasilane hydrogene
EP10787451A Withdrawn EP2507299A2 (fr) 2009-12-04 2010-12-06 Oligogermanes chlorés et procédé de production associé
EP10793199.0A Revoked EP2507174B1 (fr) 2009-12-04 2010-12-06 Procédé de préparation de polysilanes halogénés
EP10787448A Withdrawn EP2507169A1 (fr) 2009-12-04 2010-12-06 Procédé d'extraction d'impuretés contenues dans du silicium
EP10787123A Withdrawn EP2507317A1 (fr) 2009-12-04 2010-12-06 Procédé de production de polygermane hydrogéné et polygermane hydrogéné ainsi obtenu
EP10788316A Withdrawn EP2507171A1 (fr) 2009-12-04 2010-12-06 Procédé de préparation de polygermasilane hydrogéné et polygermasilane hydrogéné
EP10787124.6A Revoked EP2507296B1 (fr) 2009-12-04 2010-12-06 Polysilanes chlorés cinétiquement stables et leur production et utilisation

Family Applications Before (3)

Application Number Title Priority Date Filing Date
EP10792879.8A Not-in-force EP2507172B1 (fr) 2009-12-04 2010-12-06 Procede de preparation d'un polygermasilane hydrogene et polygermasilane hydrogene
EP10787451A Withdrawn EP2507299A2 (fr) 2009-12-04 2010-12-06 Oligogermanes chlorés et procédé de production associé
EP10793199.0A Revoked EP2507174B1 (fr) 2009-12-04 2010-12-06 Procédé de préparation de polysilanes halogénés

Family Applications After (3)

Application Number Title Priority Date Filing Date
EP10787123A Withdrawn EP2507317A1 (fr) 2009-12-04 2010-12-06 Procédé de production de polygermane hydrogéné et polygermane hydrogéné ainsi obtenu
EP10788316A Withdrawn EP2507171A1 (fr) 2009-12-04 2010-12-06 Procédé de préparation de polygermasilane hydrogéné et polygermasilane hydrogéné
EP10787124.6A Revoked EP2507296B1 (fr) 2009-12-04 2010-12-06 Polysilanes chlorés cinétiquement stables et leur production et utilisation

Country Status (9)

Country Link
US (7) US20120315392A1 (fr)
EP (7) EP2507172B1 (fr)
JP (6) JP2013512845A (fr)
CN (3) CN102639609B (fr)
BR (2) BR112012014106A2 (fr)
CA (2) CA2782226A1 (fr)
DE (1) DE102009056731A1 (fr)
TW (7) TWI589527B (fr)
WO (7) WO2011067415A1 (fr)

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DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
JP5856609B2 (ja) 2010-05-28 2016-02-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ リチウム硫黄電流生成セルの正極に使用される固体複合材料及びその製造方法並びにリチウム硫黄電流生成セル
KR101250172B1 (ko) * 2012-08-20 2013-04-05 오씨아이머티리얼즈 주식회사 고수율로 모노 게르만 가스를 제조하는 방법
DE102012224202A1 (de) * 2012-12-21 2014-07-10 Evonik Industries Ag Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen
DE102013207447A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan
DE102013207444A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen
US9174853B2 (en) 2013-12-06 2015-11-03 Gelest Technologies, Inc. Method for producing high purity germane by a continuous or semi-continuous process
DE102014007685B4 (de) 2014-05-21 2022-04-07 Sven Holl Verfahren zur Herstellung von Hexachlordisilan
DE102014007766B4 (de) 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
DE102014007768B4 (de) 2014-05-21 2025-07-03 Sven Holl Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12
WO2016011993A1 (fr) * 2014-07-22 2016-01-28 Norbert Auner Procédé pour la dissociation de liaisons silicium-silicium et/ou de liaisons silicium-chlore dans des monosilanes, des polysilanes et/ou des oligosilanes
DE102014013250B4 (de) * 2014-09-08 2021-11-25 Christian Bauch Verfahren zur Aufreinigung halogenierter Oligosilane
EP3233728A1 (fr) * 2014-12-15 2017-10-25 Nagarjuna Fertilizers and Chemicals Limited Procédé de production d'oligosilanes chlorés
DE102016014900A1 (de) * 2016-12-15 2018-06-21 Psc Polysilane Chemicals Gmbh Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen
DE102016225872A1 (de) * 2016-12-21 2018-06-21 Evonik Degussa Gmbh Verfahren zur Trennung von Gemischen höherer Silane
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