EP2588411A1 - Polysilanes à longueur de chaîne moyenne et procédé pour leur préparation - Google Patents
Polysilanes à longueur de chaîne moyenne et procédé pour leur préparationInfo
- Publication number
- EP2588411A1 EP2588411A1 EP11730630.8A EP11730630A EP2588411A1 EP 2588411 A1 EP2588411 A1 EP 2588411A1 EP 11730630 A EP11730630 A EP 11730630A EP 2588411 A1 EP2588411 A1 EP 2588411A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polysilanes
- ppm
- chain length
- medium chain
- length according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920000548 poly(silane) polymer Polymers 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 28
- 150000002367 halogens Chemical class 0.000 claims abstract description 18
- 125000001424 substituent group Chemical group 0.000 claims abstract description 17
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910008045 Si-Si Inorganic materials 0.000 claims abstract description 5
- 229910006411 Si—Si Inorganic materials 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000003786 synthesis reaction Methods 0.000 claims description 19
- 239000000460 chlorine Substances 0.000 claims description 16
- 238000001069 Raman spectroscopy Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 238000001845 vibrational spectrum Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005984 hydrogenation reaction Methods 0.000 claims description 4
- 238000005647 hydrohalogenation reaction Methods 0.000 claims description 4
- 239000012442 inert solvent Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 150000004756 silanes Chemical class 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 238000003776 cleavage reaction Methods 0.000 claims description 2
- 238000006704 dehydrohalogenation reaction Methods 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052752 metalloid Inorganic materials 0.000 claims description 2
- -1 metalloid hydrides Chemical class 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000007151 ring opening polymerisation reaction Methods 0.000 claims description 2
- 230000007017 scission Effects 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 claims description 2
- 238000001149 thermolysis Methods 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000005133 29Si NMR spectroscopy Methods 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000047 product Substances 0.000 description 11
- 229910003902 SiCl 4 Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000005046 Chlorosilane Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 238000007323 disproportionation reaction Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- BPPVUXSMLBXYGG-UHFFFAOYSA-N 4-[3-(4,5-dihydro-1,2-oxazol-3-yl)-2-methyl-4-methylsulfonylbenzoyl]-2-methyl-1h-pyrazol-3-one Chemical compound CC1=C(C(=O)C=2C(N(C)NC=2)=O)C=CC(S(C)(=O)=O)=C1C1=NOCC1 BPPVUXSMLBXYGG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241001091551 Clio Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical class C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006392 deoxygenation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- KSCFJBIXMNOVSH-UHFFFAOYSA-N dyphylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1N(CC(O)CO)C=N2 KSCFJBIXMNOVSH-UHFFFAOYSA-N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012847 fine chemical Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
Definitions
- the present invention relates to polysilanes of medium chain length as pure compound or mixture of
- composition the atomic ratio substituent: silicon is at least 1: 1, and method for their preparation.
- polysilanes are prepared by numerous methods, such as by heating gaseous chlorosilanes with or without reducing agent to relatively high temperatures (above 700 ° C).
- PCS chlorinated polysilanes
- the resulting chlorinated polysilanes (PCS) have only a high proportion of short-chain, branched and / or cyclic molecules and are also contaminated with solvent / catalyst or substances from the reactor walls.
- PCS chlorinated polysilanes
- the present invention is based on the object
- Polysilanes medium chain length as a pure compound or Mixture of compounds each having at least one direct bond Si-Si whose substituents consist exclusively of halogen and / or hydrogen and in whose composition the atomic ratio substituent: silicon is at least 1: 1, and a process for their
- polysilanes according to the invention of medium chain length are characterized in their chemical properties by the presence of direct bonds Si-Si, whereby these substances have a strong affinity for oxygen and chlorine and are suitable for binding these elements.
- these substances e.g. chlorinated oligosilanes too
- the vapor pressure is preferably above 1 hPa and below 1000 hPa at 200 ° C. Particularly noteworthy here is the property of all According to the invention polysilanes that from these due to their molecular composition by suitable processes, such as annealing at high temperatures, pure silicon can be obtained.
- All polysilanes according to the invention also have in common that they disproportionate in the thermal treatment, that is, disintegrate into longer and shorter-chain products.
- the brominated or hydrogenated polysilane is colorless to light yellow.
- the chlorinated polysilane is colorless to greenish yellow, intense orange or reddish brown.
- the polysilanes of medium chain length are liquid or viscous to solid depending on their molecular structure.
- polysilanes which are solids in pure form may also be completely or partially dissolved in liquid polysilanes.
- the polysilanes expediently have a metal content of less than 1%.
- polysilanes which are less than 2 atomic%.
- polysilanes are used which predominantly linear long chains and almost no short chain
- branch points of the short-chain Proportion based on the entire product, preferably less than 2%.
- the substituents of the polysilanes preferably consist exclusively of halogen or of halogen and hydrogen.
- the polysilanes of medium chain length can continue
- Polysilanes whose substituents are bromine have a) in 29 Si NMR spectra their significant product signals in the chemical shift range from -10 ppm to -42 ppm, from -46 ppm to -55 ppm and / or -63 ppm to -96 ppm , b) typical RAMAN intensities not outside the ranges 10 cm “1 to 150 cm “ 1 , 155 cm “1 to 350 cm “ 1 , at 390 cm “1 to 600 cm “ 1 and at 930 cm “1 to 1,000 cm “ 1 .
- Laser excitation T-sapphire laser, pumped by Ar ion laser
- confocal Raman and Lumineszenzmikroskop with liquid nitrogen cooled CCD detector, measuring temperature equal to room temperature, excitation wavelengths in the visible spectral range, u. a. 514.53 nm and 750 nm, measured.
- Bruker OPX 250 with pulse sequence zg30 recorded and against tetramethylsilane (TMS) as external standard [ ⁇ ( 29 Si) 0.0] referenced.
- Polysilanes of medium chain length Si n 2n + 2 and Si n 2n with n greater than 3 and less than 50, preferably greater than 3 and less than 9, more preferably greater than 3 and less than 7, and X F, Cl, Br, I and / or H is thereby characterized in that it contains one or more of the synthesis steps described below.
- the individual variants are below
- the polysilanes are through
- the polysilanes are obtained by plasma-assisted synthesis of halosilanes, where halogen is bromine.
- the polysilanes are obtained by plasma-assisted synthesis of H-silanes and / or H-oligosilanes.
- the polysilanes are obtained by plasma-assisted synthesis of halogenated oligosilanes, with particular preference being given to using halogenated di- and trisilanes.
- the polysilanes are prepared by plasma-assisted synthesis of mixtures which also contain organically substituted silanes and / or oligosilanes.
- methylchlorosilanes are used for this purpose.
- the polysilanes are through
- Hydrohalogenation may be assisted by catalysts such as ammonium salts.
- the polysilanes by catalytic coupling of disilanes and / or trisilanes with Organylphosphonium- and / or -ammoniumsalzen as
- the polysilanes are through
- Wurtzkupplung of lower halosilanes such as disilanes and / or trisilanes
- alkali metals and / or magnesium Especially preferred are activated metals, e.g. Rieke magnesium.
- the polysilanes are through
- the polysilanes are through
- the polysilanes are through
- Hydrogenation of polysilanes medium chain length obtained preference is given to using halogenated polysilanes.
- metal or metalloid hydrides are preferably used.
- the reactor parts in which the above reactions take place are at a temperature of -70 ° C to 500 ° C,
- the polysilanes are obtained by pyrolysis of polysilane by a
- Disproportionation and isolation of the polysilanes of the invention takes place from the vapor phase.
- the polysilanes are obtained by thermolytic chain extension on contact materials. It is after disproportionation of
- Starting material preferably the longer-chain fraction isolated from the product mixture.
- the polysilanes are obtained by thermal reaction of silicon with S1X. 4
- FIG. 1 shows a Si-NMR spectrum of a
- thermolysis A mixture of 300 sccm of H2 and 600 sccm of SiCl 4 (1: 2) is introduced into a quartz glass reactor, the process pressure being kept constant in the range from 1.5 to 1.6 hPa. The gas mixture is then by a high-frequency discharge in the
- the polychlorosilane mixture converted to a solid, highly crosslinked chlorinated polysilane (chloride-containing silicon) of the empirical formula SiClo, os to SiClo, o7 and short-chain chlorosilanes. After completion of the reaction, the container was allowed to cool and the solid product was taken out. Yields based on the
- a mixture of 200 sccm of H2 and 600 sccm of SiCl 4 vapor (1: 3) is introduced into a quartz glass reactor, the process pressure being kept constant in the range of 1.50-1.55 hPa.
- the gas mixture is then transferred by a high-frequency discharge in the plasma-shaped state, wherein the
- radiated power is 400W.
- the orange-yellow product is removed from the reactor by dissolving in a little SiCl 4 .
- 86.5 g of chlorinated polysilane remain in the form of an orange-yellow viscous mass.
- 80 g of a chlorinated polysilane obtained in this way are mixed with 36.5 g
- the chain length refers to the number of directly interconnected silicon atoms in a compound.
- the term "average chain length" those compounds in which 3 ⁇ n ⁇ 50, preferably 3 ⁇ n ⁇ 9, more preferably 3 ⁇ n ⁇ 7.
- longer-chain used here refers to those compounds in which n> 3. Where n is the
- Contaminants are present in the mixture than is usual at high levels of purity for fine chemicals (e.g.,> 99%). Therefore, here is meant a purity of at least 99.9%.
- polysilane such as SiCl 4 , benzene, toluene, paraffin, etc.
- the polysilane preferably meets the requirements for
- monosilanes can be used as starting materials for the process according to the invention
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Silicon Polymers (AREA)
- Silicon Compounds (AREA)
Abstract
La présente invention concerne des polysilanes à longueur de chaîne moyenne se présentant sous forme de composé pur ou de mélange de composés comprenant chacun au moins une liaison directe Si-Si, dont les substituants sont composés exclusivement d'halogène et/ou d'hydrogène, dont les longueurs de chaîne moyennes n sont supérieures à 3 et inférieures à 50, de préférence supérieures à 3 et inférieures à 9, mieux encore supérieures à 3 et inférieures à 7, et dans la composition desquels le rapport atomique substituant/silicium est d'au moins 1/1. L'invention concerne, en outre, un procédé de préparation de ces polysilanes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010025948A DE102010025948A1 (de) | 2010-07-02 | 2010-07-02 | Polysilane mittlerer Kettenlänge und Verfahren zu deren Herstellung |
| PCT/EP2011/061258 WO2012001180A1 (fr) | 2010-07-02 | 2011-07-04 | Polysilanes à longueur de chaîne moyenne et procédé pour leur préparation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2588411A1 true EP2588411A1 (fr) | 2013-05-08 |
Family
ID=44544097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP11730630.8A Withdrawn EP2588411A1 (fr) | 2010-07-02 | 2011-07-04 | Polysilanes à longueur de chaîne moyenne et procédé pour leur préparation |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20130216465A1 (fr) |
| EP (1) | EP2588411A1 (fr) |
| JP (1) | JP2013529591A (fr) |
| KR (1) | KR101569594B1 (fr) |
| CN (1) | CN103080006A (fr) |
| DE (1) | DE102010025948A1 (fr) |
| WO (1) | WO2012001180A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013021306A1 (de) * | 2013-12-19 | 2015-06-25 | Johann Wolfgang Goethe-Universität | Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen |
| DE102014109275A1 (de) * | 2014-07-02 | 2016-01-07 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von Nanopartikeln, Nanopartikel und deren Verwendung |
| DE102014013250B4 (de) | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
| KR101945215B1 (ko) * | 2016-02-16 | 2019-02-07 | 쇼와 덴코 가부시키가이샤 | 올리고실란의 제조 방법 |
| US11401166B2 (en) | 2018-10-11 | 2022-08-02 | L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for producing isomer enriched higher silanes |
| US11097953B2 (en) | 2018-10-11 | 2021-08-24 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for producing liquid polysilanes and isomer enriched higher silanes |
| US10752507B2 (en) | 2018-10-11 | 2020-08-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for producing liquid polysilanes and isomer enriched higher silanes |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB703349A (en) | 1949-12-10 | 1954-02-03 | Ferranti Ltd | Improvements relating to coin-actuated mechanisms |
| GB702349A (en) | 1950-07-08 | 1954-01-13 | British Thomson Houston Co Ltd | Improvements in and relating to the preparation of chloropolysilanes |
| DE955414C (de) | 1954-09-04 | 1957-01-03 | Kali Cheime Ag | Verfahren zur Herstellung von Siliciumsubbromiden |
| JPS4998400A (fr) * | 1973-01-27 | 1974-09-18 | ||
| US4309259A (en) | 1980-05-09 | 1982-01-05 | Motorola, Inc. | High pressure plasma hydrogenation of silicon tetrachloride |
| US4374182A (en) | 1980-07-07 | 1983-02-15 | Dow Corning Corporation | Preparation of silicon metal through polymer degradation |
| JPS591505A (ja) * | 1982-06-28 | 1984-01-06 | Tdk Corp | 低摩擦薄膜付き物品 |
| JPS59182222A (ja) * | 1983-03-30 | 1984-10-17 | Mitsui Toatsu Chem Inc | ポリクロロシランの製造方法 |
| US4683147A (en) * | 1984-04-16 | 1987-07-28 | Canon Kabushiki Kaisha | Method of forming deposition film |
| JPS60218473A (ja) * | 1984-04-16 | 1985-11-01 | Canon Inc | 堆積膜形成方法 |
| JPS6389414A (ja) * | 1986-10-03 | 1988-04-20 | Mitsubishi Metal Corp | クロロポリシランの製造方法 |
| JPH01100010A (ja) * | 1987-10-14 | 1989-04-18 | Canon Inc | 非晶質水素化シリコン微粒子膜及びその製造方法 |
| FI82232C (fi) | 1989-03-14 | 1991-02-11 | Kemira Oy | Foerfarande foer framstaellning av kiselhalogenid. |
| US6858196B2 (en) | 2001-07-19 | 2005-02-22 | Asm America, Inc. | Method and apparatus for chemical synthesis |
| JP2003313299A (ja) * | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
| DE102006034061A1 (de) | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
| DE102006043929B4 (de) | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
| JP4305513B2 (ja) * | 2007-01-18 | 2009-07-29 | セイコーエプソン株式会社 | 高次シラン組成物、膜付基板の製造方法、電気光学装置および電子デバイス |
| DE102007013219A1 (de) * | 2007-03-15 | 2008-09-18 | Rev Renewable Energy Ventures, Inc. | Plasmagestützte Synthese |
| DE102008025261B4 (de) * | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung |
| EP2135844A1 (fr) * | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Procédé de fabrication d'hydridosilanes plus élevés |
-
2010
- 2010-07-02 DE DE102010025948A patent/DE102010025948A1/de not_active Withdrawn
-
2011
- 2011-07-04 US US13/807,052 patent/US20130216465A1/en not_active Abandoned
- 2011-07-04 KR KR1020137002352A patent/KR101569594B1/ko not_active Expired - Fee Related
- 2011-07-04 JP JP2013517346A patent/JP2013529591A/ja active Pending
- 2011-07-04 WO PCT/EP2011/061258 patent/WO2012001180A1/fr not_active Ceased
- 2011-07-04 EP EP11730630.8A patent/EP2588411A1/fr not_active Withdrawn
- 2011-07-04 CN CN2011800318131A patent/CN103080006A/zh active Pending
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2012001180A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102010025948A1 (de) | 2012-01-05 |
| CN103080006A (zh) | 2013-05-01 |
| JP2013529591A (ja) | 2013-07-22 |
| KR101569594B1 (ko) | 2015-11-16 |
| WO2012001180A1 (fr) | 2012-01-05 |
| US20130216465A1 (en) | 2013-08-22 |
| KR20130072237A (ko) | 2013-07-01 |
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