EP0667200B1 - Preparation of high-purity metal powder from metal alkoxides - Google Patents
Preparation of high-purity metal powder from metal alkoxides Download PDFInfo
- Publication number
- EP0667200B1 EP0667200B1 EP95101419A EP95101419A EP0667200B1 EP 0667200 B1 EP0667200 B1 EP 0667200B1 EP 95101419 A EP95101419 A EP 95101419A EP 95101419 A EP95101419 A EP 95101419A EP 0667200 B1 EP0667200 B1 EP 0667200B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- tungsten
- alkoxide
- metal
- tantalum
- methoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 150000004703 alkoxides Chemical class 0.000 title claims abstract description 14
- 239000000843 powder Substances 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 10
- LVNAMAOHFNPWJB-UHFFFAOYSA-N methanol;tantalum Chemical compound [Ta].OC.OC.OC.OC.OC LVNAMAOHFNPWJB-UHFFFAOYSA-N 0.000 claims abstract description 5
- NTWWZVDCSZOPGW-UHFFFAOYSA-N CO[W](OC)(OC)OC Chemical compound CO[W](OC)(OC)OC NTWWZVDCSZOPGW-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012159 carrier gas Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- -1 alkoxide compounds Chemical class 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 150000004704 methoxides Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000011651 chromium Substances 0.000 abstract description 4
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 abstract description 2
- OIIGPGKGVNSPBV-UHFFFAOYSA-N [W+4].CC[O-].CC[O-].CC[O-].CC[O-] Chemical compound [W+4].CC[O-].CC[O-].CC[O-].CC[O-] OIIGPGKGVNSPBV-UHFFFAOYSA-N 0.000 abstract description 2
- IJCCNPITMWRYRC-UHFFFAOYSA-N methanolate;niobium(5+) Chemical compound [Nb+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C IJCCNPITMWRYRC-UHFFFAOYSA-N 0.000 abstract description 2
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 abstract description 2
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052756 noble gas Inorganic materials 0.000 abstract 1
- 150000002835 noble gases Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ITQGMAPLESXWPA-UHFFFAOYSA-N [W+6].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C Chemical compound [W+6].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C ITQGMAPLESXWPA-UHFFFAOYSA-N 0.000 description 1
- BCXDNCKWFAAAII-UHFFFAOYSA-N [W+6].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C.[O-]C Chemical compound [W+6].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C.[O-]C BCXDNCKWFAAAII-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZOYJRCIORIVXKU-UHFFFAOYSA-N chromium(3+);2-methylpropan-2-olate Chemical compound [Cr+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] ZOYJRCIORIVXKU-UHFFFAOYSA-N 0.000 description 1
- DYDHOQSULGBQQU-UHFFFAOYSA-N chromium(4+) 2-methylpropan-2-olate Chemical compound [Cr+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] DYDHOQSULGBQQU-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000007700 distillative separation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000001640 fractional crystallisation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000006198 methoxylation reaction Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical group I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/28—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from gaseous metal compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/30—Obtaining chromium, molybdenum or tungsten
- C22B34/36—Obtaining tungsten
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/12—Dry methods smelting of sulfides or formation of mattes by gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/01—Reducing atmosphere
- B22F2201/013—Hydrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2203/00—Controlling
- B22F2203/11—Controlling temperature, temperature profile
Definitions
- the present invention relates to a method for producing high-purity Metal powder.
- the microfabrication of highly integrated electronic components always poses higher requirements for the purity of the interconnect metals, e.g. Titanium, Niobium, tantalum, molybdenum or tungsten.
- the radioactive elements Thorium and uranium, as ⁇ -emitters can have serious consequences in highly integrated applications Cause memory chips.
- Ion exchange resins are used, as in Metallurgy of the Rarer Metals, Volume 6, Tantalum and Niobium, page 129-133.
- Tungsten hexafluoride Distillative separation via the metal halides, e.g. Tungsten hexafluoride in principle also possible.
- This method is the subject of JP-A 02 30,706.
- Tungsten hexafluoride is converted to tungsten powder with hydrogen at 650-1400 ° C reduced, which is suitable for the production of sputtering targets.
- Disadvantage of this The process is that in the reduction with hydrogen, a large amount of hydrogen fluoride attack.
- the object of this invention was therefore to provide a process for the production of to provide high purity metal powder which is simple and can be carried out inexpensively. This problem is solved by Implementation of volatile, i.e. sublimable or distillable, Metal alkoxides with a reaction gas.
- This method is the subject of this invention.
- the metal alkoxide compounds which are used according to the invention have the general formula M (OR) x , where M is a metal from Group 3-14 (according to IUPAC 1985), R is an alkyl, aryl, cycloalkyl or aralkyl radical and M (OR ) x is a sublimable or distillable compound.
- M is a metal from Group 3-14 (according to IUPAC 1985)
- R is an alkyl, aryl, cycloalkyl or aralkyl radical
- M (OR ) x is a sublimable or distillable compound.
- some alkoxide compounds that are suitable according to the invention are listed as examples.
- Metal alkoxide boiling point Aluminum isopropylate 128 ° C / 5 mbar Chromium (IV) tert-butoxide 66 ° C / 3.6 mbar Gallium ethylate 185 ° C / 0.7 mbar Niobium methylate 153 ° C / 0.13 mbar Niobium ethylate 156 ° C / 0.07 mbar Tantalum methylate 130 ° C / 0.3 mbar Tantalum ethylate 146 ° C / 0.2 mbar Titanium ethylate 104 ° C / 1.3 mbar Tungsten methylate 90 ° C / 0.5 mbar
- the reaction gas in the reaction according to the invention is preferably hydrogen.
- the reaction gas can also be mixed with an inert carrier gas, in particular argon be diluted.
- the method according to the invention is preferably at a temperature between 400 ° C and 1400 ° C carried out.
- the most preferred reaction temperature lies between 600 ° C and 1200 ° C.
- WF 6 is converted into W (OCH 3 ) 6 in an equilibrium reaction with volatile Si (OCH 3 ) 4 as ligand transfer agent.
- OCH 3 volatile Si
- Complete methoxylation is only possible by treating the partially fluorinated product with a methanolic NaOCH 3 solution.
- Suitable reactors for carrying out the process according to the invention can Furnaces with an adjustable atmosphere or gas phase reactors. Since the metal alkoxide compounds according to the invention all in a simple manner in the gas phase to be brought is also a gas phase reactor according to DE-A 4 214 720 suitable. The choice of reactor is determined by the particular requirements regarding fine particle size and particle size distribution of the metal powder.
- a 0.5 molar solution of LiCl in methanol was electrolysed under argon protective gas in a flat ground reaction vessel which was provided with a steel cathode, an anode made of tungsten and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 . The electrolyte solution turned yellow-orange and began to boil shortly after the start of electrolysis.
- a solution of 50 g of NH 4 Cl in 2000 ml of methanol was electrolysed under argon protective gas in a flat-ended reaction vessel which was provided with a steel cathode, an anode made of tantalum and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 .
- the electrolytic solution turned yellowish and began to boil shortly after the start of the electrolysis.
- Electrochemically produced tungsten ethoxide is purified by sublimation in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (2).
- the tungsten metal powder was analyzed for impurities using GDMS (glow-discharge mass spectroscopy). Analysis of the tungsten metal powder, values in ppm.
- Al 1 B ⁇ 0.05 Ba 0.09 Bi ⁇ 0.02 Approx 0.34 CD ⁇ 0.05 Co 0.08 Cr 0.26 Cu 0.06 Fe 0.31 K ⁇ 0.05 Mg 5 Mn 0.015 Mon 6 N / A 0.2 Ni 0.12 P 0.19 Pb 0.03 Sb ⁇ 0.05 Si 9 Sn ⁇ 0.05 Sr. ⁇ 0.02 Th ⁇ 0.0005 Ti 0.48 U ⁇ 0.0005 V ⁇ 0.02 Zn ⁇ 0.02 Zr ⁇ 0.05
- Electrochemically produced tantalum methoxide is purified by distillation at 130 ° C. in a vacuum (0.3 mbar) in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (3).
- Ta (OCH 3 ) 5 + 21 ⁇ 2 H 2 ⁇ Ta + 5 CH 3 OH The tantalum metal powder was analyzed for impurities using GDMS (glow-discharge mass spectroscopy). Analysis of the tantalum metal powder, values in ppm.
- Electrochemically produced titanium ethoxide is purified by distillation at 104 ° C. in a vacuum (0.3 mbar) in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (4).
- the titanium metal powder was analyzed for impurities using GDMS (glow-discharge mass sprectroscopy). Analysis of the titanium metal powder, values in ppm.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Carbon And Carbon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung von hochreinem Metallpulver.The present invention relates to a method for producing high-purity Metal powder.
Die Mikrofabrikation von hochintegrierten elektronischen Bauteilen stellt immer höhere Anforderungen an die Reinheit der Interconnectmetalle, wie z.B. Titan, Niob, Tantal, Molybdän oder Wolfram. Insbesondere die radioaktiven Elemente Thorium und Uran können als α-Strahler folgenschwere Fehler in hochintegrierten Speicherchips verursachen.The microfabrication of highly integrated electronic components always poses higher requirements for the purity of the interconnect metals, e.g. Titanium, Niobium, tantalum, molybdenum or tungsten. Especially the radioactive elements Thorium and uranium, as α-emitters, can have serious consequences in highly integrated applications Cause memory chips.
In Semiconductor Materials and Process Technology Handbook for Very Large Scale Integration (VLSI) and Ultra large Scale Integration (ULSI), Gary E. McGuire, Editor, Noyes Publications, Seiten 575-609 und in Silicon Processing for the VLSI Era, Lattice Press, Seiten 384-406 wird ein Überblick über die konventionellen Anforderungen bezüglich elektrischer Leitfähigkeit und Temperaturbeständigkeit der Interconnectmetalle gegeben. Da sich mit zunehmender Integrationsdichte nicht nur die Anzahl der benötigten Verbindungen, sondern auch die durchschnittliche Länge der Interconnects zwischen den aktiven Schaltelementen erhöht, werden immer höhere Reinheitsanforderungen an die Interconnectmetalle, die zumeist durch Sputtern oder Verdampfung aufgetragen werden, gestellt.In Semiconductor Materials and Process Technology Handbook for Very Large Scale Integration (VLSI) and Ultra large Scale Integration (ULSI), Gary E. McGuire, Editor, Noyes Publications, pages 575-609 and in Silicon Processing for the VLSI Era, Lattice Press, pages 384-406 is an overview of the conventional requirements regarding electrical conductivity and temperature resistance of interconnect metals. Because with increasing Integration density not only the number of connections required, but also the average length of the interconnects between the active switching elements increased, purity requirements for interconnect metals are increasing, which are usually applied by sputtering or evaporation, posed.
Nach N.N. Greenwood und A. Earnshaw, Chemistry of the Elements, Pergamon Press, 1984, Seite 1113 ist zur Herstellung von hochreinem Titan der Prozeß nach van Arkel und de Boer bekannt. In diesem Verfahren wird das zu reinigende Rohtitan zusammen mit Jod in einem evakuierten Gefäß auf ∼500°C erwärmt, wobei sich gasförmiges Titanjodid bildet, welches sich wiederum an einem elektrisch auf ∼1200°C beheizten Wolframdraht an einer anderen Stelle in der Apparatur zu hochreinem Titan zersetzt. Ein Nachteil des Verfahrens liegt darin, daß nur geringe Mengen auf diese Weise hergestellt werden können und eine Reihe weiterer Elemente wie z.B. Zirkonium, Hafnium und vor allem auch Thorium gleichfalls überführt werden können.According to N.N. Greenwood and A. Earnshaw, Chemistry of the Elements, Pergamon Press, 1984, page 1113 is the process for the production of high purity titanium van Arkel and de Boer known. In this process, what is to be cleaned Raw titanium together with iodine in an evacuated vessel heated to ∼500 ° C, whereby gaseous titanium iodide forms, which in turn forms on a Tungsten wire electrically heated to C1200 ° C elsewhere in the Equipment decomposed to high-purity titanium. A disadvantage of the method is that only small quantities can be produced in this way and a A number of other elements such as Zirconium, hafnium and above all Thorium can also be transferred.
Nach dem in der Kirk-Othmer Encyclopedia of Chemical Technology, Volume 22, Third Edition, Seiten 541-564 beschriebenen Stand der Technik zur Herstellung von Tantalmetall kommen als alternative Verfahren zur Reinmetallherstellung die Reinigung durch fraktionierte Kristallisation und die Reinigung durch Flüssigphasenextraktion in Frage. Das Prinzip der Flüssigphasenextraktion beruht auf die unterschiedliche Löslichkeit der Metallfluoride in einem Zwei-Phasen-System aus verdünnter Säure und einer organischen Phase, z.B. Methylisobutylketon. In US-A 3 117 833 wird die Trennung von Tantal und Niob auf diesem Wege beschrieben.According to the in the Kirk-Othmer Encyclopedia of Chemical Technology, Volume 22, Third edition, pages 541-564 described prior art for manufacturing of tantalum metal come as alternative methods for the production of pure metal Purification by fractional crystallization and purification by Liquid phase extraction in question. The principle of liquid phase extraction is based the different solubility of the metal fluorides in a two-phase system from dilute acid and an organic phase, e.g. Methyl isobutyl ketone. The separation of tantalum and niobium is disclosed in US Pat. No. 3,117,833 described this way.
Eine Trennung und Reinigung der gewünschten Metallspezies kann auch über Ionenaustauscherharze erfolgen, wie in Metallurgy of the Rarer Metals, Volume 6, Tantalum and Niobium, Seite 129-133 beschrieben.Separation and purification of the desired metal species can also be done via Ion exchange resins are used, as in Metallurgy of the Rarer Metals, Volume 6, Tantalum and Niobium, page 129-133.
Eine destillative Trennung über die Metallhalogenide, z.B. Wolframhexafluorid, ist prinzipiell auch möglich. Diese Methode ist Gegenstand der JP-A 02 30,706. Wolframhexafluorid wird mit Wasserstoff bei 650-1400°C zu Wolframpulver reduziert, das sich zur Herstellung von Sputtering Targets eignet. Nachteil dieses Verfahrens ist, daß bei der Reduktion mit Wasserstoff große Menge Fluorwasserstoff anfallen.Distillative separation via the metal halides, e.g. Tungsten hexafluoride in principle also possible. This method is the subject of JP-A 02 30,706. Tungsten hexafluoride is converted to tungsten powder with hydrogen at 650-1400 ° C reduced, which is suitable for the production of sputtering targets. Disadvantage of this The process is that in the reduction with hydrogen, a large amount of hydrogen fluoride attack.
Aufgabe dieser Erfindung war es daher, ein Verfahren zur Herstellung von hochreinem Metallpulver zur Verfügung zu stellen, welches einfach und kostengünstig durchgeführt werden kann. Diese Aufgabe wird gelöst durch Umsetzung von flüchtigen, also sublimierbaren oder destillierbaren, Metallalkoxiden mit einem Reaktionsgas. The object of this invention was therefore to provide a process for the production of to provide high purity metal powder which is simple and can be carried out inexpensively. This problem is solved by Implementation of volatile, i.e. sublimable or distillable, Metal alkoxides with a reaction gas.
Dieses Verfahren ist Gegenstand dieser Erfindung.This method is the subject of this invention.
Die Metallalkoxidverbindungen, die erfindungsgemäß zum Einsatz kommen haben
die allgemeine Formel M(OR)x, wobei M ein Metall aus den Gruppe 3-14 (nach
IUPAC 1985), R ein Alkyl-, Aryl-, Cycloalkyl- oder Aralkylrest und M(OR)x eine
sublimierbare bzw. destillierbare Verbindung ist. In der nachfolgenden Tabelle
werden einige erfindungsgemäß in Frage kommende Alkoxidverbindungen beispielhaft
aufgeführt.
Erfindungsgemäß besonders bevorzugt sind Chrom-tert.butoxid, Niobmethoxid, Niobethoxid, Tantalmethoxid, Tantalethoxid, Wolframmethoxid und WolframethoxidChromium tert-butoxide, niobium methoxide, Niobium ethoxide, tantalum methoxide, tantalum ethoxide, tungsten methoxide and tungsten methoxide
Das Reaktionsgas bei der erfindungsgemäßen Reaktion ist bevorzugt Wasserstoff. Das Reaktionsgas kann auch mit einem inerten Trägergas, insbesondere Argon verdünnt werden. The reaction gas in the reaction according to the invention is preferably hydrogen. The reaction gas can also be mixed with an inert carrier gas, in particular argon be diluted.
Das erfindungsgemäße Verfahren wird bevorzugt bei einer Temperatur zwischen 400°C und 1400°C durchgeführt. Die besonders bevorzugte Reaktionstemperatur liegt zwischen 600°C und 1200°C.The method according to the invention is preferably at a temperature between 400 ° C and 1400 ° C carried out. The most preferred reaction temperature lies between 600 ° C and 1200 ° C.
Zur Herstellung hochreiner Metallpulver ist es zweckmäßig das Metallalkoxid durch Destillation bzw. Sublimation in einer PVDF Apparatur zu reinigen und anschließend im Wasserstoffstrom zu reduzieren. Auf diese Weise können auch die Verunreinigungen, die durch die Handhabung in Glasapparaturen auftreten, wie z.B. Aluminium, Calcium, Magnesium und Silizium auf unter 0,5 ppm geführt werden.To produce high-purity metal powder, it is expedient to use the metal alkoxide by distillation or sublimation in a PVDF apparatus and then reduce in hydrogen flow. This way too the contaminants that arise from handling in glass equipment, such as e.g. Aluminum, calcium, magnesium and silicon led to below 0.5 ppm will.
Zur Herstellung der Metallalkoxide ist zu beachten, daß die herkömmlichen Verfahren der Alkoxidsynthese aus Metallchlorid und Alkohol in Gegenwart einer Base, wie sie z.B. für die Herstellung von Tantalalkoxiden in J. Chem. Soc. 1955, Seite 726-728 beschrieben wird, immer zu chlorid-haltigen Verbindungen führt. Andere Alkoxide wie z.B. die Wolframalkoxide sind auf diesem Syntheseweg gar nicht zugänglich.For the production of the metal alkoxides it should be noted that the conventional Process of alkoxide synthesis from metal chloride and alcohol in the presence of a Base as e.g. for the production of tantalum alkoxides in J. Chem. Soc. 1955, Page 726-728 is always leads to compounds containing chloride. Other alkoxides such as the tungsten alkoxides are cooked in this way inaccessible.
Nach Z. Anorg. Chem. 1932, 206, 423 ist das herkömmliche Verfahren zur Alkoxidsynthese aus Metallchlorid und Alkohol in Anwesenheit von Ammoniak ungeeignet für Wolfram(VI)-alkoxide, denn WCl6 reagiert direkt mit Ammoniak zu einem Wolfrannitrid.After Z. Anorg. Chem. 1932, 206, 423, the conventional method for alkoxide synthesis from metal chloride and alcohol in the presence of ammonia is unsuitable for tungsten (VI) alkoxides, because WCl 6 reacts directly with ammonia to form a tungsten nitride.
Nach Angew. Chem. Int. Ed. Engl. 1982, 94, 146-147 wird WF6 in einer Gleichgewichtsreaktion mit flüchtigem Si(OCH3)4 als Ligandenüberträger zu W(OCH3)6 umgesetzt. Die vollständige Methoxylierung gelingt aber nur durch Behandlung des noch teilweise fluorierten Produkts mit einer methanolischer NaOCH3 Lösung.According to Angew. Chem. Int. Ed. Engl. 1982, 94, 146-147, WF 6 is converted into W (OCH 3 ) 6 in an equilibrium reaction with volatile Si (OCH 3 ) 4 as ligand transfer agent. Complete methoxylation is only possible by treating the partially fluorinated product with a methanolic NaOCH 3 solution.
Aus Inorg. Chem. 1977, 16, 1794-1801 ist bekannt, daß Wolfram(VI)-alkoxide aus der Reaktion von Wolfram(VI)-hexakis(dimethylamid) und dem entsprechenden Alkohol hergestellt werden können. Allerdings ist die Synthese der Wolframamidverbindung nach Inorg. Chem. 1977, 16, 1791-1794 sehr aufwendig und scheidet daher für ein großtechnisches Verfahren aus. From Inorg. Chem. 1977, 16, 1794-1801 it is known that tungsten (VI) alkoxides out the reaction of tungsten (VI) hexakis (dimethylamide) and the corresponding Alcohol can be made. However, the synthesis of the tungsten amide compound according to Inorg. Chem. 1977, 16, 1791-1794 very complex and is therefore ruled out for a large-scale process.
Am besten geeignet zur Herstellung von Wolframalkoxiden insbesondere, aber
auch der Alkoxide anderer Metalle aus den Gruppen 3 bis 14 (nach IUPAC 1985)
sind, nach unseren Erfahrungen, elektrochemische Verfahren nach US-A 3,730,857
und Journal of General Chemistry of the USSR (Übersetzung von Zhurnal
Obshchei Khimii) 1985, 55, 2130-2131. In diesen Verfahren wird eine Anode aus
Wolfram durch anodische Oxidation in einer alkoholischen Elektrolytlösung gemäß
Reaktionsgleichung (1) aufgelöst.
Geeignete Reaktoren zur Durchführung des erfindungsgemäßen Verfahrens können Öfen mit einstellbarer Atmosphäre oder auch Gasphasenreaktoren sein. Da die erfindungsgemäßen Metallalkoxidverbindungen alle in einfacher Weise in Gasphase zu bringen sind, ist auch ein Gasphasenreaktor nach DE-A 4 214 720 geeignet. Die Wahl des Reaktors wird bestimmt durch die jeweils gestellten Anforderungen bezüglich Feinteiligkeit und Teilchengrößenverteilung des Metallpulvers.Suitable reactors for carrying out the process according to the invention can Furnaces with an adjustable atmosphere or gas phase reactors. Since the metal alkoxide compounds according to the invention all in a simple manner in the gas phase to be brought is also a gas phase reactor according to DE-A 4 214 720 suitable. The choice of reactor is determined by the particular requirements regarding fine particle size and particle size distribution of the metal powder.
Die vorliegende Erfindung soll im folgenden anhand einiger Beispiele näher erläutert werden, ohne Einschränkungen für naheliegende Variationen der Prozeßführung. Zunächst wird die Synthese einiger Wolframalkoxide, die sich zur Durchführung der vorliegenden Erfindung eignen, beschrieben (Vorversuch 1 und 2). The present invention will be described in more detail below with the aid of a few examples are explained without restrictions for obvious variations of the Litigation. First, the synthesis of some tungsten alkoxides that are used Suitable for carrying out the present invention, described (preliminary experiment 1 and 2).
Eine 0,5 molare Lösung von LiCl in Methanol wurde unter Argon Schutzgas in einem Planschliffreaktionsgefäß elektrolysiert, das mit einer Stahlkathode, einer Anode aus Wolfram und einem Rückflußkühler versehen war. Es wurde mit Gleichstrom und einer Stromdichte von 200 mA/cm2 elektrolysiert. Die Elektrolytlösung färbte sich gelborange und begann kurz nach Beginn der Elektrolyse zu sieden.A 0.5 molar solution of LiCl in methanol was electrolysed under argon protective gas in a flat ground reaction vessel which was provided with a steel cathode, an anode made of tungsten and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 . The electrolyte solution turned yellow-orange and began to boil shortly after the start of electrolysis.
Nach der Elektrolyse wurde das überschüssige Methanol bei Raumtemperatur im Vakuum abgezogen. Der trockene Rückstand wurde in Hexan aufgenommen, kurz unter Rückfluß zum Sieden gebracht, und über eine Umkehrfritte vom nicht gelösten Anteil getrennt. Das Filtrat wird destilliert. Nach Entfernung des Hexans, siedet W(OCH3)6 bei ∼90°C/0,5 mbar. Die Verbindung ist farblos und erstarrt bei 50°C. Elementanalyse: W, gefunden 48.3%, berechnet 49,7%; C, gefunden 19,6%, berechnet 19,5%; H, gefunden 4,7%, berechnet 4,9%; Cl gefunden 22 ppm.After the electrolysis, the excess methanol was removed in vacuo at room temperature. The dry residue was taken up in hexane, briefly brought to the boil under reflux and separated from the undissolved portion by means of a reverse frit. The filtrate is distilled. After removal of the hexane, W (OCH 3 ) 6 boils at ∼90 ° C / 0.5 mbar. The compound is colorless and solidifies at 50 ° C. Elemental analysis: W, found 48.3%, calculated 49.7%; C, found 19.6%, calculated 19.5%; H, found 4.7%, calculated 4.9%; Cl found 22 ppm.
Eine Lösung von 50 g NH4Cl in 2000 ml Methanol wurde unter Argon Schutzgas in einem Planschliffreaktionsgefäß elektrolysiert, das mit einer Stahlkathode, einer Anode aus Tantal und einem Rückflußkühler versehen war. Es wurde mit Gleichstrom und einer Stromdichte von 200 mA/cm2 elektrolysiert. Die Elektrolytlösung färbte sich gelblich und begann kurz nach Beginn der Elektrolyse zu sieden.A solution of 50 g of NH 4 Cl in 2000 ml of methanol was electrolysed under argon protective gas in a flat-ended reaction vessel which was provided with a steel cathode, an anode made of tantalum and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 . The electrolytic solution turned yellowish and began to boil shortly after the start of the electrolysis.
Nach der Elektrolyse wurde das überschüssige Methanol bei Raumtemperatur im Vakuum abgezogen. Der trockene Rückstand wurde in Hexan aufgenommen, kurz unter Rückfluß zum Sieden gebracht, und über eine Umkehrfritte vom nicht gelösten Anteil getrennt. Das Filtrat wird destilliert. Nach Entfernung des Hexans, siedet Ta(OCH3)5 bei ∼130°C und 0.3 mbar in Vakuum. Die Verbindung ist farblos und erstarrt bei ∼50°C. Elementanalyse: Ta, gefunden 50,2%, berechnet 53,8%; C, gefunden 17,9%, berechnet 17,9%; H, gefunden 4,6%, berechnet 4,5%; Cl gefunden 19 ppm. After the electrolysis, the excess methanol was removed in vacuo at room temperature. The dry residue was taken up in hexane, briefly brought to the boil under reflux and separated from the undissolved portion by means of a reverse frit. The filtrate is distilled. After removal of the hexane, Ta (OCH 3 ) 5 boils at ∼130 ° C and 0.3 mbar in vacuum. The compound is colorless and solidifies at ∼50 ° C. Elemental analysis: Ta, found 50.2%, calculated 53.8%; C, found 17.9%, calculated 17.9%; H, found 4.6%, calculated 4.5%; Cl found 19 ppm.
Elektrochemisch hergestelltes Wolframmethoxid wird durch Sublimation in einer
Glasapparatur gereinigt und anschließend in einem Rohrofen bei 1000°C mit
Wasserstoff umgesetzt, Gleichung (2).
Das Wolframmetallpulver wurde mit GDMS (glow-discharge mass spectroscopy)
auf Verunreinigungen analysiert.
Elektrochemisch hergestelltes Tantalmethoxid wird durch Destillation bei 130°C
im Vakuum (0,3 mbar) in einer Glasapparatur gereinigt und anschließend in einem
Rohrofen bei 1000°C mit Wasserstoff umgesetzt, Gleichung (3).
Elektrochemisch hergestelltes Titanethoxid wird durch Destillation bei 104°C im
Vakuum (0,3 mbar) in einer Glasapparatur gereinigt und anschließend in einem
Rohrofen bei 1000°C mit Wasserstoff umgesetzt, Gleichung (4).
Claims (8)
- Method for the preparation of high-purity metal powder, characterised in that the preparation is carried out by the reaction of one or more volatile metal alkoxide compounds with a reducing gas.
- Method according to claim 1, characterized in that hydrogen is used as the reducing gas.
- Method according to one of claims 1 or 2, characterised in that the reducing gas is diluted with an inert carrier gas from among the rare gases.
- Method according to claim 3, characterised in that the carrier gas is argon.
- Method according to one or more of claims 1 to 4, characterized in that the metal alkoxide is an alkoxide of an element of the groups 3 to 14 of the periodic system of elements.
- Method according to one or more of claims 1 to 5, characterized in that the alkoxide compounds are preferably methoxides.
- Method according to one or more of claims 1 to 6, characterized in that the alkoxide compound is tungsten methoxide and/or tantalum methoxide.
- Method according to one or more of claims 1 to 7, characterized in that the reaction is carried out at a temperature between 400°C and 1400°C and particularly preferably between 600°C and 1200°C.
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| DE4404747 | 1994-02-15 |
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| DE10231777A1 (en) * | 2002-07-13 | 2004-02-05 | Diehl Munitionssysteme Gmbh & Co. Kg | Production of a tungsten base material for hollow charges, fragments and/or penetrators comprises removing interstitial impurities from the base material |
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| US6100415A (en) * | 1998-03-16 | 2000-08-08 | Japan Pionics Co., Ltd. | Purified alkoxide and process for purifying crude alkoxide |
| WO2000067936A1 (en) * | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
| US5997612A (en) * | 1998-07-24 | 1999-12-07 | The Boc Group, Inc. | Pressure swing adsorption process and apparatus |
| RU2164194C2 (en) * | 1999-05-11 | 2001-03-20 | Институт химии и технологии редких элементов и минерального сырья им. И.В. Тананаева Кольского научного центра РАН | Method of rectifying metal powder production |
| US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| DE10030387A1 (en) * | 2000-06-21 | 2002-01-03 | Starck H C Gmbh Co Kg | capacitor powder |
| RU2170647C1 (en) * | 2000-11-02 | 2001-07-20 | Закрытое акционерное общество "ИНВЕСТ-Технологии" | Method of production of ultradispersed metal powder |
| US7187396B2 (en) | 2003-11-07 | 2007-03-06 | Engelhard Corporation | Low visibility laser marking additive |
| CN1954042B (en) | 2004-09-23 | 2011-03-23 | 六号元素(控股)公司 | Polycrystalline abrasive materials and method of manufacture |
| US7399335B2 (en) * | 2005-03-22 | 2008-07-15 | H.C. Starck Inc. | Method of preparing primary refractory metal |
| US7758668B1 (en) | 2006-04-18 | 2010-07-20 | Chemnano, Inc. | Process of manufacturing metallic nano-scale powders |
| RU2413011C1 (en) * | 2009-12-01 | 2011-02-27 | Государственное образовательное учреждение высшего профессионального образования "Ангарская государственная техническая академия" (ГОУ ВПО "АГТА") | Plasma-chemical reactor for processing mineral ore |
| RU2410446C1 (en) * | 2009-12-01 | 2011-01-27 | Государственное образовательное учреждение высшего профессионального образования Ангарская государственная техническая академия (ГОУВПО АГТА) | Method of mineral ore processing |
| US9856569B2 (en) * | 2012-07-03 | 2018-01-02 | Field Upgrading Limited | Apparatus and method of producing metal in a nasicon electrolytic cell |
| CN109396456B (en) * | 2018-12-28 | 2024-02-13 | 西安赛隆金属材料有限责任公司 | A device and method for preparing spherical tungsten powder |
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| US3117833A (en) * | 1958-09-25 | 1964-01-14 | Fansteel Metallurgical Corp | Process of purifying and separating columbium and tantalum values from each other |
| US3640093A (en) * | 1969-03-10 | 1972-02-08 | Owens Illinois Inc | Process of converting metalorganic compounds and high purity products obtained therefrom |
| GB1307581A (en) * | 1970-05-05 | 1973-02-21 | Monsanto Chemicals | Production of alkoxides |
| JPS5785943A (en) * | 1980-11-18 | 1982-05-28 | Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk | Recovering method for metal from fluorine compound |
| EP0197271B1 (en) * | 1985-03-04 | 1989-04-19 | Kabushiki Kaisha Toshiba | Methods for preparing high-purity molybdenum or tungsten powder and high-purity oxides powder of the same |
| US4582696A (en) * | 1985-04-15 | 1986-04-15 | Ford Motor Company | Method of making a special purity silicon nitride powder |
| US4615736A (en) * | 1985-05-01 | 1986-10-07 | Allied Corporation | Preparation of metal powders |
| US4755369A (en) * | 1985-05-22 | 1988-07-05 | Research Development Corporation Of Japan | Production of ultrafine particles |
| JPS61275108A (en) * | 1985-05-30 | 1986-12-05 | Mitsubishi Mining & Cement Co Ltd | Preparation of powder of dielectric substance |
| JPS63184306A (en) * | 1986-09-22 | 1988-07-29 | Mitsui Toatsu Chem Inc | Method for stabilizing ferromagnetic metal powder |
| JPH0230706A (en) * | 1988-07-19 | 1990-02-01 | Central Glass Co Ltd | Manufacture of beta-tungsten powder |
| US5455223A (en) * | 1993-02-24 | 1995-10-03 | American Superconductor Corporation | Coated precursor powder for oxide superdonductors |
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| DE10231777A1 (en) * | 2002-07-13 | 2004-02-05 | Diehl Munitionssysteme Gmbh & Co. Kg | Production of a tungsten base material for hollow charges, fragments and/or penetrators comprises removing interstitial impurities from the base material |
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| CA2142254A1 (en) | 1995-08-16 |
| CN1112467A (en) | 1995-11-29 |
| RU2126735C1 (en) | 1999-02-27 |
| KR950031331A (en) | 1995-12-18 |
| DE4404747A1 (en) | 1995-08-17 |
| IL112620A0 (en) | 1995-05-26 |
| RU95101844A (en) | 1997-03-10 |
| DE4404747C2 (en) | 1995-12-14 |
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