BE666999A - - Google Patents
Info
- Publication number
- BE666999A BE666999A BE666999DA BE666999A BE 666999 A BE666999 A BE 666999A BE 666999D A BE666999D A BE 666999DA BE 666999 A BE666999 A BE 666999A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Paints Or Removers (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES92162A DE1229986B (de) | 1964-07-21 | 1964-07-21 | Vorrichtung zur Gewinnung reinen Halbleiter-materials |
| DES0092160 | 1964-07-21 | ||
| DES0096802 | 1965-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE666999A true BE666999A (xx) | 1966-01-17 |
Family
ID=27212890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE666999D BE666999A (xx) | 1964-07-21 | 1965-07-16 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3340848A (xx) |
| BE (1) | BE666999A (xx) |
| DE (1) | DE1229986B (xx) |
| GB (2) | GB1062379A (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
| EP2108619B1 (en) * | 2008-03-21 | 2011-06-22 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
| KR101115697B1 (ko) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3014791A (en) * | 1958-10-01 | 1961-12-26 | Merck & Co Inc | Pyrolysis apparatus |
| US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
| DE1223804B (de) * | 1961-01-26 | 1966-09-01 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium |
| US3232800A (en) * | 1961-12-16 | 1966-02-01 | Nippon Electric Co | Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer |
| DE1255635B (de) * | 1962-06-14 | 1967-12-07 | Siemens Ag | Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus halbleitenden Stoffen |
| DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
-
1964
- 1964-07-21 DE DES92162A patent/DE1229986B/de active Pending
-
1965
- 1965-07-16 BE BE666999D patent/BE666999A/xx unknown
- 1965-07-19 GB GB30696/65A patent/GB1062379A/en not_active Expired
- 1965-07-20 GB GB30884/65A patent/GB1110323A/en not_active Expired
- 1965-07-21 US US473789A patent/US3340848A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1540408B2 (de) | 1975-09-04 |
| GB1062379A (en) | 1967-03-22 |
| US3340848A (en) | 1967-09-12 |
| DE1540408A1 (de) | 1970-01-02 |
| GB1110323A (en) | 1968-04-18 |
| DE1229986B (de) | 1966-12-08 |