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GB1110323A - Method of sheathing semiconductor devices - Google Patents

Method of sheathing semiconductor devices

Info

Publication number
GB1110323A
GB1110323A GB30884/65A GB3088465A GB1110323A GB 1110323 A GB1110323 A GB 1110323A GB 30884/65 A GB30884/65 A GB 30884/65A GB 3088465 A GB3088465 A GB 3088465A GB 1110323 A GB1110323 A GB 1110323A
Authority
GB
United Kingdom
Prior art keywords
sheathing
resin
dipping
molten
thermoplast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30884/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1110323A publication Critical patent/GB1110323A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Silicon Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Semiconductor device is sheathed with a casting resin or thermoplast by dipping the device into a molten hard wax to provide an inner sheathing and then dipping into a molten polymeric fatty acid amide to form an outer sheathing prior to applying the casting resin or thermoplast. The first sheathing may be effected by placing the article in a pre-formed case and then pouring the resin e.g. epoxy resin into the case, or dipping into liquid or molten resin. Suitable hard waxes are amine, polyethylene waxes e.g. "ozocerite" wax. Inorganic fillers e.g. quartz meal or mica powder, inorganic or organic pigments such as titanium white, halogen blue, ultramarine and fast blue may be added to the polymeric fatty acid amide. The coated article may be tempered by heating. The articles coated may be a selenium rectifier, rectifiers comprised of monocrystalline semiconductor elements e.g. silicon.
GB30884/65A 1964-07-21 1965-07-20 Method of sheathing semiconductor devices Expired GB1110323A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0092160 1964-07-21
DES92162A DE1229986B (en) 1964-07-21 1964-07-21 Device for the extraction of pure semiconductor material
DES0096802 1965-04-28

Publications (1)

Publication Number Publication Date
GB1110323A true GB1110323A (en) 1968-04-18

Family

ID=27212890

Family Applications (2)

Application Number Title Priority Date Filing Date
GB30696/65A Expired GB1062379A (en) 1964-07-21 1965-07-19 Apparatus for the production of pure semiconductor material
GB30884/65A Expired GB1110323A (en) 1964-07-21 1965-07-20 Method of sheathing semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB30696/65A Expired GB1062379A (en) 1964-07-21 1965-07-19 Apparatus for the production of pure semiconductor material

Country Status (4)

Country Link
US (1) US3340848A (en)
BE (1) BE666999A (en)
DE (1) DE1229986B (en)
GB (2) GB1062379A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
EP2108619B1 (en) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polycrystalline silicon reactor
KR101115697B1 (en) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 Cvd reactor with energy efficient thermal-radiation shield

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3014791A (en) * 1958-10-01 1961-12-26 Merck & Co Inc Pyrolysis apparatus
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
DE1223804B (en) * 1961-01-26 1966-09-01 Siemens Ag Device for the extraction of pure semiconductor material, such as silicon
US3232800A (en) * 1961-12-16 1966-02-01 Nippon Electric Co Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer
DE1255635B (en) * 1962-06-14 1967-12-07 Siemens Ag Process for producing crystalline, in particular single-crystalline, layers from semiconducting materials
DE1244733B (en) * 1963-11-05 1967-07-20 Siemens Ag Device for growing monocrystalline semiconductor material layers on monocrystalline base bodies

Also Published As

Publication number Publication date
BE666999A (en) 1966-01-17
GB1062379A (en) 1967-03-22
US3340848A (en) 1967-09-12
DE1540408A1 (en) 1970-01-02
DE1540408B2 (en) 1975-09-04
DE1229986B (en) 1966-12-08

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