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NO20084616L - Fremgangsmate for a rense silikon - Google Patents

Fremgangsmate for a rense silikon

Info

Publication number
NO20084616L
NO20084616L NO20084616A NO20084616A NO20084616L NO 20084616 L NO20084616 L NO 20084616L NO 20084616 A NO20084616 A NO 20084616A NO 20084616 A NO20084616 A NO 20084616A NO 20084616 L NO20084616 L NO 20084616L
Authority
NO
Norway
Prior art keywords
silicon
procedure
purified
cleaning silicone
processes
Prior art date
Application number
NO20084616A
Other languages
English (en)
Inventor
Scott Nichol
Original Assignee
6N Silicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 6N Silicon Inc filed Critical 6N Silicon Inc
Publication of NO20084616L publication Critical patent/NO20084616L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Foreliggende oppfinnelse stiller til rådighet fremgangsmåter for rensing av silisium og framgangsmå ter for å oppnå renset silisium, så vel som framgangsmåter for å oppnå rensede silisiumkrystaller, renset granulert silisium og/eller ingoter av renset silisium.
NO20084616A 2006-04-04 2008-10-31 Fremgangsmate for a rense silikon NO20084616L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78870806P 2006-04-04 2006-04-04
PCT/CA2007/000574 WO2007112592A1 (en) 2006-04-04 2007-04-04 Method for purifying silicon

Publications (1)

Publication Number Publication Date
NO20084616L true NO20084616L (no) 2008-12-22

Family

ID=38563061

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084616A NO20084616L (no) 2006-04-04 2008-10-31 Fremgangsmate for a rense silikon

Country Status (13)

Country Link
US (5) US7727503B2 (no)
EP (2) EP2024285B1 (no)
JP (1) JP5374673B2 (no)
KR (1) KR101061530B1 (no)
CN (2) CN101460399B (no)
AU (1) AU2007234343B2 (no)
BR (1) BRPI0710313A2 (no)
CA (1) CA2648288A1 (no)
ES (1) ES2497990T3 (no)
NO (1) NO20084616L (no)
RU (1) RU2445258C2 (no)
TW (1) TWI429794B (no)
WO (1) WO2007112592A1 (no)

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KR20080108151A (ko) 2008-12-11
JP5374673B2 (ja) 2013-12-25
JP2009532316A (ja) 2009-09-10
WO2007112592A1 (en) 2007-10-11
EP2024285A1 (en) 2009-02-18
TWI429794B (zh) 2014-03-11
US20090274607A1 (en) 2009-11-05
CN103030148B (zh) 2015-02-25
US7883680B2 (en) 2011-02-08
US20100233064A1 (en) 2010-09-16
EP2024285A4 (en) 2012-03-28
EP2024285B1 (en) 2014-06-11
RU2445258C2 (ru) 2012-03-20
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US20110129405A1 (en) 2011-06-02
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US7727503B2 (en) 2010-06-01
BRPI0710313A2 (pt) 2011-08-09
EP2749533B1 (en) 2016-02-24
US20140338587A1 (en) 2014-11-20
AU2007234343A1 (en) 2007-10-11
CN101460399B (zh) 2012-03-14
US20120255485A1 (en) 2012-10-11
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RU2008143439A (ru) 2010-05-10
KR101061530B1 (ko) 2011-09-01

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