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NL138766B - METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING. - Google Patents

METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.

Info

Publication number
NL138766B
NL138766B NL656506040A NL6506040A NL138766B NL 138766 B NL138766 B NL 138766B NL 656506040 A NL656506040 A NL 656506040A NL 6506040 A NL6506040 A NL 6506040A NL 138766 B NL138766 B NL 138766B
Authority
NL
Netherlands
Prior art keywords
crischless
enlarging
cross
section
shaped body
Prior art date
Application number
NL656506040A
Other languages
Dutch (nl)
Other versions
NL6506040A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES89317A priority Critical patent/DE1218404B/en
Priority to CH1115564A priority patent/CH413785A/en
Priority to SE14136/64A priority patent/SE309965B/xx
Priority to GB3442/65A priority patent/GB1044592A/en
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to NL656506040A priority patent/NL138766B/en
Priority to FR17994A priority patent/FR1444259A/en
Priority to BE664435D priority patent/BE664435A/xx
Priority to DES98115A priority patent/DE1275032B/en
Priority to DES98712A priority patent/DE1263698B/en
Priority to NL6605968A priority patent/NL6605968A/xx
Priority to DK251066AA priority patent/DK124458B/en
Priority to DK260666AA priority patent/DK124459B/en
Priority to NL666607827A priority patent/NL146402B/en
Priority to CH837666A priority patent/CH442246A/en
Priority to CH837566A priority patent/CH442245A/en
Priority to FR65422A priority patent/FR90825E/en
Priority to FR68096A priority patent/FR91257E/en
Priority to SE9375/66A priority patent/SE323654B/xx
Priority to BE683852D priority patent/BE683852A/xx
Priority to GB30903/66A priority patent/GB1079870A/en
Priority to GB31122/66A priority patent/GB1081600A/en
Priority to US564118A priority patent/US3477811A/en
Priority to SE10177/66A priority patent/SE323655B/xx
Priority to BE685153D priority patent/BE685153A/xx
Publication of NL6506040A publication Critical patent/NL6506040A/xx
Priority to US664211A priority patent/US3414388A/en
Priority to US853596A priority patent/US3658598A/en
Publication of NL138766B publication Critical patent/NL138766B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL656506040A 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING. NL138766B (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH1115564A CH413785A (en) 1964-02-01 1964-08-26 Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
SE14136/64A SE309965B (en) 1964-02-01 1964-11-23
GB3442/65A GB1044592A (en) 1964-02-01 1965-01-26 A method of melting a rod of crystalline material zone by zone
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
FR17994A FR1444259A (en) 1964-02-01 1965-05-21 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
BE664435D BE664435A (en) 1964-02-01 1965-05-25
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting
NL6605968A NL6605968A (en) 1964-02-01 1966-05-03
DK251066AA DK124458B (en) 1964-02-01 1966-05-17 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod.
DK260666AA DK124459B (en) 1964-02-01 1966-05-21 Method for crucible zone melting of a crystalline rod, in particular a semiconductor rod.
NL666607827A NL146402B (en) 1964-02-01 1966-06-06 METHOD OF ENLARGING THE CROSS-SECTION OF A LEAD RIGHT AT ITS END CRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
CH837666A CH442246A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH837566A CH442245A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
FR65422A FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor
FR68096A FR91257E (en) 1964-02-01 1966-07-04 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
SE9375/66A SE323654B (en) 1964-02-01 1966-07-08
BE683852D BE683852A (en) 1964-02-01 1966-07-08
GB30903/66A GB1079870A (en) 1964-02-01 1966-07-08 A method of melting a rod of crystalline material zone-by-zone
GB31122/66A GB1081600A (en) 1964-02-01 1966-07-11 A method of melting a rod of crystalline material zone-by-zone
US564118A US3477811A (en) 1964-02-01 1966-07-11 Method of crucible-free zone melting crystalline rods,especially of semiconductive material
SE10177/66A SE323655B (en) 1964-02-01 1966-07-26
BE685153D BE685153A (en) 1964-02-01 1966-08-05
US664211A US3414388A (en) 1964-02-01 1967-08-29 Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting
US853596A US3658598A (en) 1964-02-01 1969-08-19 Method of crucible-free zone melting crystalline rods, especially of semiconductor material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Publications (2)

Publication Number Publication Date
NL6506040A NL6506040A (en) 1966-11-14
NL138766B true NL138766B (en) 1973-05-15

Family

ID=27437570

Family Applications (3)

Application Number Title Priority Date Filing Date
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
NL6605968A NL6605968A (en) 1964-02-01 1966-05-03
NL666607827A NL146402B (en) 1964-02-01 1966-06-06 METHOD OF ENLARGING THE CROSS-SECTION OF A LEAD RIGHT AT ITS END CRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL6605968A NL6605968A (en) 1964-02-01 1966-05-03
NL666607827A NL146402B (en) 1964-02-01 1966-06-06 METHOD OF ENLARGING THE CROSS-SECTION OF A LEAD RIGHT AT ITS END CRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.

Country Status (9)

Country Link
US (3) US3477811A (en)
BE (3) BE664435A (en)
CH (3) CH413785A (en)
DE (3) DE1218404B (en)
DK (2) DK124458B (en)
FR (1) FR1444259A (en)
GB (3) GB1044592A (en)
NL (3) NL138766B (en)
SE (3) SE309965B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) * 1991-06-10 1992-10-20 Impact Selector, Inc. Remotely adjustable fishing jar and method for using same
JP2820027B2 (en) 1994-05-24 1998-11-05 信越半導体株式会社 Semiconductor single crystal growth method
RU2324017C1 (en) * 2006-08-28 2008-05-10 Федеральное Государственное Унитарное Предприятие "Всероссийский научно-исследовательский институт токов высокой частоты им. В.П. Вологдина" (ФГУП ВНИИТВЧ им. В.П. Вологдина) Process to manufacture silicon hollow monocrystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) * 1958-11-19 1962-05-29 Dewrance & Co Butterfly valves
AT223659B (en) * 1960-11-25 1962-10-10 Siemens Ag Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

Also Published As

Publication number Publication date
FR1444259A (en) 1966-07-01
NL6506040A (en) 1966-11-14
GB1044592A (en) 1966-10-05
US3477811A (en) 1969-11-11
SE323655B (en) 1970-05-11
BE685153A (en) 1967-02-06
CH442246A (en) 1967-08-31
GB1081600A (en) 1967-08-31
NL146402B (en) 1975-07-15
BE683852A (en) 1967-01-09
DE1218404B (en) 1966-06-08
DE1275032B (en) 1968-08-14
DE1263698B (en) 1968-03-21
DK124458B (en) 1972-10-23
BE664435A (en) 1965-11-25
US3658598A (en) 1972-04-25
SE309965B (en) 1969-04-14
NL6607827A (en) 1967-02-08
US3414388A (en) 1968-12-03
GB1079870A (en) 1967-08-16
CH442245A (en) 1967-08-31
CH413785A (en) 1966-05-31
NL6605968A (en) 1967-01-11
DK124459B (en) 1972-10-23
SE323654B (en) 1970-05-11

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