SE323654B - - Google Patents

Info

Publication number: SE323654B
Authority: SE; Sweden

Application number

SE9375/66A

Inventor

W Keller

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1964-02-01

Filing date

1966-07-08

Publication date

1970-05-11

1966-07-08 Application filed by Siemens Ag filed Critical Siemens Ag

1970-05-11 Publication of SE323654B publication Critical patent/SE323654B/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Electromagnetism (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

SE9375/66A 1964-02-01 1966-07-08 SE323654B (xx)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
DES89317A DE1218404B (de)	1964-02-01	1964-02-01	Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
NL656506040A NL138766B (nl)	1964-02-01	1965-05-12	Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam.
DES98115A DE1275032B (de)	1964-02-01	1965-07-10	Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
DES98712A DE1263698B (de)	1964-02-01	1965-08-07	Verfahren zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number	Publication Date
SE323654B true SE323654B (xx)	1970-05-11

Family

ID=27437570

Family Applications (3)

Application Number	Title	Priority Date
SE14136/64A SE309965B (xx)	1964-02-01	1964-11-23
SE9375/66A SE323654B (xx)	1964-02-01	1966-07-08
SE10177/66A SE323655B (xx)	1964-02-01	1966-07-26

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
SE14136/64A SE309965B (xx)	1964-02-01	1964-11-23

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
SE10177/66A SE323655B (xx)	1964-02-01	1966-07-26

Country Status (9)

Country	Link
US (3)	US3477811A (xx)
BE (3)	BE664435A (xx)
CH (3)	CH413785A (xx)
DE (3)	DE1218404B (xx)
DK (2)	DK124458B (xx)
FR (1)	FR1444259A (xx)
GB (3)	GB1044592A (xx)
NL (3)	NL138766B (xx)
SE (3)	SE309965B (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1272886B (de) *	1966-09-24	1968-07-18	Siemens Ag	Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
DE1544301A1 (de) *	1966-09-28	1970-05-27	Siemens Ag	Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
DE1619996A1 (de) *	1967-03-18	1971-07-08	Siemens Ag	Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus Halbleitermaterial
US3607109A (en) *	1968-01-09	1971-09-21	Emil R Capita	Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (de) *	1969-11-29	1974-07-25	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
DE2234512C3 (de) *	1972-07-13	1979-04-19	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand
US4002523A (en) *	1973-09-12	1977-01-11	Texas Instruments Incorporated	Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) *	1991-06-10	1992-10-20	Impact Selector, Inc.	Remotely adjustable fishing jar and method for using same
JP2820027B2 (ja)	1994-05-24	1998-11-05	信越半導体株式会社	半導体単結晶の成長方法
RU2324017C1 (ru) *	2006-08-28	2008-05-10	Федеральное Государственное Унитарное Предприятие "Всероссийский научно-исследовательский институт токов высокой частоты им. В.П. Вологдина" (ФГУП ВНИИТВЧ им. В.П. Вологдина)	Способ получения полых монокристаллов кремния

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2972525A (en) *	1953-02-26	1961-02-21	Siemens Ag	Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (xx) *	1958-02-19
US3036892A (en) *	1958-03-05	1962-05-29	Siemens Ag	Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) *	1958-11-19	1962-05-29	Dewrance & Co	Butterfly valves
AT223659B (de) *	1960-11-25	1962-10-10	Siemens Ag	Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen

1964
- 1964-02-01 DE DES89317A patent/DE1218404B/de active Pending
- 1964-08-26 CH CH1115564A patent/CH413785A/de unknown
- 1964-11-23 SE SE14136/64A patent/SE309965B/xx unknown
1965
- 1965-01-26 GB GB3442/65A patent/GB1044592A/en not_active Expired
- 1965-05-12 NL NL656506040A patent/NL138766B/xx not_active IP Right Cessation
- 1965-05-21 FR FR17994A patent/FR1444259A/fr not_active Expired
- 1965-05-25 BE BE664435D patent/BE664435A/xx unknown
- 1965-07-10 DE DES98115A patent/DE1275032B/de active Pending
- 1965-08-07 DE DES98712A patent/DE1263698B/de active Pending
1966
- 1966-05-03 NL NL6605968A patent/NL6605968A/xx unknown
- 1966-05-17 DK DK251066AA patent/DK124458B/da unknown
- 1966-05-21 DK DK260666AA patent/DK124459B/da unknown
- 1966-06-06 NL NL666607827A patent/NL146402B/xx unknown
- 1966-06-09 CH CH837666A patent/CH442246A/de unknown
- 1966-06-09 CH CH837566A patent/CH442245A/de unknown
- 1966-07-08 SE SE9375/66A patent/SE323654B/xx unknown
- 1966-07-08 GB GB30903/66A patent/GB1079870A/en not_active Expired
- 1966-07-08 BE BE683852D patent/BE683852A/xx unknown
- 1966-07-11 GB GB31122/66A patent/GB1081600A/en not_active Expired
- 1966-07-11 US US564118A patent/US3477811A/en not_active Expired - Lifetime
- 1966-07-26 SE SE10177/66A patent/SE323655B/xx unknown
- 1966-08-05 BE BE685153D patent/BE685153A/xx unknown
1967
- 1967-08-29 US US664211A patent/US3414388A/en not_active Expired - Lifetime
1969
- 1969-08-19 US US853596A patent/US3658598A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
SE323655B (xx)	1970-05-11
DE1275032B (de)	1968-08-14
NL6605968A (xx)	1967-01-11
NL6506040A (xx)	1966-11-14
SE309965B (xx)	1969-04-14
BE683852A (xx)	1967-01-09
US3658598A (en)	1972-04-25
GB1044592A (en)	1966-10-05
GB1081600A (en)	1967-08-31
US3477811A (en)	1969-11-11
DK124458B (da)	1972-10-23
US3414388A (en)	1968-12-03
FR1444259A (fr)	1966-07-01
CH442246A (de)	1967-08-31
DK124459B (da)	1972-10-23
BE664435A (xx)	1965-11-25
CH442245A (de)	1967-08-31
NL138766B (nl)	1973-05-15
DE1263698B (de)	1968-03-21
DE1218404B (de)	1966-06-08
NL146402B (nl)	1975-07-15
CH413785A (de)	1966-05-31
NL6607827A (xx)	1967-02-08
BE685153A (xx)	1967-02-06
GB1079870A (en)	1967-08-16

Publication	Publication Date	Title
BE660800A (xx)	1965-09-08
BE483969A (xx)
BE432268A (xx)
BE47396A (xx)
BE664435A (xx)	1965-11-25
BE507097A (xx)
BE518974A (xx)
BE554195A (xx)
BE564626A (xx)
BE584699A (xx)
BE603534A (xx)
BE610935A (xx)
BE613833A (xx)
BE621510A (xx)
BE622126A (xx)
BE623398A (xx)
BE626083A (xx)
BE626684A (xx)
BE627057A (xx)
BE627390A (xx)
BE627931A (xx)
BE628611A (xx)
BE629793A (xx)
BE632875A (xx)
BE636791A (xx)