[go: up one dir, main page]

FR90825E - Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor - Google Patents

Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor

Info

Publication number
FR90825E
FR90825E FR65422A FR65422A FR90825E FR 90825 E FR90825 E FR 90825E FR 65422 A FR65422 A FR 65422A FR 65422 A FR65422 A FR 65422A FR 90825 E FR90825 E FR 90825E
Authority
FR
France
Prior art keywords
crucible
enlarging
semiconductor
bar
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR65422A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES89317A external-priority patent/DE1218404B/en
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Priority to FR65422A priority Critical patent/FR90825E/en
Application granted granted Critical
Publication of FR90825E publication Critical patent/FR90825E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
FR65422A 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor Expired FR90825E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR65422A FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting
FR65422A FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor

Publications (1)

Publication Number Publication Date
FR90825E true FR90825E (en) 1968-02-23

Family

ID=27512290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR65422A Expired FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor

Country Status (1)

Country Link
FR (1) FR90825E (en)

Similar Documents

Publication Publication Date Title
FR1444259A (en) Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
IT8224676A0 (en) METHOD AND APPARATUS FOR CONTROLING THE HEATING POWER DURING THE APPLICATION OF A MELTED FILLING MATERIAL TO A WORKPIECE.
FR91257E (en) Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
FR90825E (en) Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor
DE3773732D1 (en) MICRO WELDING MACHINE WITH IMPROVED ELECTRODE TIP DESIGN.
FR1517547A (en) A method of making a crystalline, granular, uniform size detergent composition
FR1508106A (en) Filler material usable in a submerged arc welding process and its manufacturing process
IT1207794B (en) MACHINE FOR THE GRANULATION OF EXTRUDED BARS OF PALSTIC MATERIAL COOLED AT LEAST PARTIALLY.
BE807674R (en) MELTING PROCESS BY ZONE WITHOUT CRUCIBLE OF A SEMICONDUCTOR BAR
FR1541205A (en) Method for melting a crucible-free zone of a crystalline bar, in particular a semiconductor bar
FR1477554A (en) Nozzle with expandable section for jet formation without risk of clogging, especially in a bottle rinsing machine
FR1537569A (en) Process for crucible-free zone melting of a crystalline bar
FR1448120A (en) Method of brazing elements for the manufacture of radiators and radiators by applying
FR1445480A (en) Process for zone and crucible-less melting of semiconductor elements
IT7920470A0 (en) PROCEDURE FOR FORMING A STABLE MELTED ZONE IN THE ZONE MELTING, WITHOUT CRUCIBLE, OF A BAR OF CRYSTALLINE SEMICONDUCTOR MATERIAL.
FR1507908A (en) Controlled lathe with at least two controlled feed directions for the tool
FR1527337A (en) Crucible-free zone melting process
FR91417E (en) Arc welding process, the installation and the welding electrode for carrying out this process or similar process
FR1399061A (en) Raincoat manufacturing process and machine ensuring the implementation
LANORAM Arc welding
FR1444693A (en) Crucible for drawing crystals, and more particularly semiconductor crystals, from a material in the molten state
FR1420046A (en) tubular connection elements, tool and method for applying them
FR1431573A (en) Advance adjustment method in EDM machining operations
FR1441743A (en) Advance adjustment method in EDM machining operations
FR1503651A (en) Mold, in particular for the manufacture of concrete elements