| BSIM-CMG: Standard FinFET compact model for advanced circuit design JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ... ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 128 | 2015 |
| Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures G Pahwa, P Kushwaha, A Dasgupta, S Salahuddin, C Hu IEEE Transactions on Electron Devices 68 (9), 4223-4230, 2021 | 112 | 2021 |
| Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior S Aamir Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, ... IEEE Transactions on Electron Devices 63 (2), 2016 | 112* | 2016 |
| Proposal for capacitance matching in negative capacitance field-effect transistors H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ... IEEE Electron Device Letters 40 (3), 463-466, 2019 | 101 | 2019 |
| Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan IEEE Transactions on Electron Devices 62 (2), 443-448, 2014 | 82 | 2014 |
| BSIM compact model of quantum confinement in advanced nanosheet FETs A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ... IEEE Transactions on Electron Devices 67 (2), 730-737, 2020 | 76 | 2020 |
| ASM-HEMT: compact model for GaN HEMTs A Dasgupta, S Ghosh, YS Chauhan, S Khandelwal 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 62 | 2015 |
| Design optimization techniques in nanosheet transistor for RF applications P Kushwaha, A Dasgupta, MY Kao, H Agarwal, S Salahuddin, C Hu IEEE Transactions on Electron Devices 67 (10), 4515-4520, 2020 | 61 | 2020 |
| Spacer Engineering in Negative Capacitance FinFETs YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ... IEEE Electron Device Letters 40 (6), 1009-1012, 2019 | 50 | 2019 |
| Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation A Dasgupta, S Khandelwal, YS Chauhan IEEE Microwave and Wireless Components Letters 25 (6), 376-378, 2015 | 50 | 2015 |
| Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ... IEEE Electron Device Letters 40 (6), 985-988, 2019 | 46 | 2019 |
| GaN HEMT Modeling for Power and RF Applications using ASM-HEMT S Ghosh, SA Ahsan, A Dasgupta, S Khandelwal, YS Chauhan IEEE International Conference on Emerging Electronics (ICEE, 2016 | 44 | 2016 |
| Compact Modeling of Flicker Noise in HEMTs A Dasgupta, S Khandelwal, YS Chauhan IEEE Journal of Electron Devices Society 2 (6), 174-178, 2014 | 43 | 2014 |
| Compact model for geometry dependent mobility in nanosheet FETs A Dasgupta, SS Parihar, H Agarwal, P Kushwaha, YS Chauhan, C Hu IEEE Electron Device Letters 41 (3), 313-316, 2020 | 39 | 2020 |
| Deep Learning Based Fast BSIM-CMG Parameter Extraction for General Input Dataset A Ashai, A Jadhav, AK Behra, S Roy, A Dasgupta, B Sarkar IEEE Transactions on Electron Devices 70 (7), 3437-3441, 2023 | 36 | 2023 |
| Machine learning augmented compact modeling for simultaneous improvement in computational speed and accuracy K Sheelvardhan, S Guglani, M Ehteshamuddin, S Roy, A Dasgupta IEEE Transactions on Electron Devices 71 (1), 239-245, 2023 | 36 | 2023 |
| Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport A Dasgupta, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 64 (4), 1837-1845, 2017 | 31 | 2017 |
| Compact Modeling of Surface Potential, Charge and Current in Nanoscale Transistors under Quasi-Ballistic Regime A Dasgupta, A Agarwal, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 63 (11), 4151-4159, 2016 | 30 | 2016 |
| Effect of access region and field plate on capacitance behavior of GaN HEMT K Sharma, A Dasgupta, S Ghosh, SA Ahsan, S Khandelwal, YS Chauhan 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 30 | 2015 |
| Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly along the Channel MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ... IEEE Electron Device Letters 40 (5), 822-825, 2019 | 29 | 2019 |
Yogesh S. ChauhanFellow IEEE & INAE, Professor-IIT KanpurVerified email at iitk.ac.in
