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Keshari Nandan
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Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors
K Nandan, B Ghosh, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 69 (1), 406-413, 2021
562021
Two-dimensional semiconductors based Field-Effect Transistors: Review of Major Milestones and Challenges
K Nandan, A Agarwal, S Bhowmick, YS Chauhan
Frontiers in Electronics 4, 1277927, 2023
242023
Designing Power-Efficient Transistors Using Narrow-Bandwidth Materials from the (; ; ) Monolayer Series
K Nandan, S Bhowmick, YS Chauhan, A Agarwal
Physical Review Applied 19 (6), 064058, 2023
192023
Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors
A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 70 (5), 2445-2452, 2023
132023
Performance Investigation of p-FETs Based on Highly Air-Stable Monolayer Pentagonal PdSe2
K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 68 (12), 6551-6557, 2021
132021
Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect
K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
IEEE Journal of the Electron Devices Society 8, 1177-1183, 2020
112020
Performance Evaluation of Monolayer ZrS3 Transistors for Next-Generation Computing
A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 70 (10), 5435-5442, 2023
102023
Field-Effect Transistors Based on Two-dimensional Materials
K Nandan, A Naseer, YS Chauhan
Transactions of the Indian National Academy of Engineering 8 (1), 1-14, 2023
82023
Symmetric BSIM-SOI—Part II: A compact model for partially depleted SOI MOSFETs
CK Dabhi, D Nandi, K Nandan, D Rajasekharan, G Pahwa, N Karumuri, ...
IEEE Transactions on Electron Devices 71 (4), 2293-2300, 2024
72024
Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs
K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
52020
A Physics-Based Compact Model for Silicon Cold-Source Transistors
A Kar, K Nandan, YS Chauhan
IEEE Transactions on Electron Devices 70 (4), 1580-1588, 2023
42023
Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
K Nandan, A Naseer, A Agarwal, S Bhowmick, YS Chauhan
arXiv preprint arXiv:2412.01016, 2024
32024
Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series
K Nandan, S Bhowmick, YS Chauhan, A Agarwal
arXiv preprint arXiv:2211.09540, 2022
22022
Extremely Scaled Silicon Nanosheet Transistors
K Nandan, A Agarwal, S Bhowmick, YS Chauhan
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
12022
PdSe2 based field-effect transistors
K Nandan, A Agarwal, S Bhowmick, YS Chauhan
arXiv preprint arXiv:2201.03493, 2022
12022
Compact Modeling and Cryogenic Benchmarking of 14 nm FinFETsWith Advanced HZH Gate Stack
K Nandan, Y Cao
2025 Device Research Conference (DRC), 1-2, 2025
2025
Harnessing Gaussianlike transfer characteristics for ultraefficient computation in monolayer two-dimensional devices
A Naseer, K Nandan, M Rafiq, A Agarwal, S Bhowmick, YS Chauhan
Physical Review Applied 23 (4), 044026, 2025
2025
Transistors Based on Novel 2-D Monolayer Semiconductors BiOSe, InSe, and MoSiN for Enhanced Logic Density Scaling
K Nandan, A Naseer, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices, 2024
2024
Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic Applications
A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
2024 Device Research Conference (DRC), 1-2, 2024
2024
Emerging Low-Dimensional Materials and Devices for Continued CMOS Scaling
K Nandan
IIT Kanpur, Kanpur, 208016, India, Source: https://www.researchgate.net …, 2023
2023
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