| Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone ACS nano 14 (2), 1982-1989, 2020 | 75 | 2020 |
| Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori Physical Review Applied 8, 054047, 2017 | 61 | 2017 |
| Ultralow specific contact resistivity in metal–graphene junctions via contact engineering V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ... Advanced Materials Interfaces 6 (1), 1801285, 2019 | 60 | 2019 |
| Modeling of electron devices based on 2-D materials EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018 | 57 | 2018 |
| A new holistic model of 2-D semiconductor FETs EG Marin, SJ Bader, D Jena IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018 | 53 | 2018 |
| First-principles simulations of FETs based on two-dimensional InSe EG Marin, D Marian, G Iannaccone, G Fiori IEEE Electron Device Letters 39 (4), 626-629, 2018 | 51 | 2018 |
| Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts A Avsar, K Marinov, EG Marin, G Iannaccone, K Watanabe, T Taniguchi, ... Advanced Materials 30 (18), 1707200, 2018 | 46 | 2018 |
| Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting H Mine, A Kobayashi, T Nakamura, T Inoue, S Pakdel, D Marian, ... Physical review letters 123 (14), 146803, 2019 | 41 | 2019 |
| Flexible one-dimensional metal–insulator–graphene diode Z Wang, B Uzlu, M Shaygan, M Otto, M Ribeiro, EG Marín, G Iannaccone, ... ACS Applied Electronic Materials 1 (6), 945-950, 2019 | 41 | 2019 |
| A graphene field-effect transistor based analogue phase shifter for high-frequency applications A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ... IEEE Access 8, 209055-209063, 2020 | 39 | 2020 |
| First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials EG Marin, D Marian, G Iannaccone, G Fiori Nanoscale 9 (48), 19390-19397, 2017 | 37 | 2017 |
| Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ... Advanced Electronic Materials 8 (9), 2200123, 2022 | 32 | 2022 |
| Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ... Journal of Applied Physics 112 (8), 2012 | 31 | 2012 |
| Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ... npj 2D Materials and Applications 3 (1), 47, 2019 | 28 | 2019 |
| Analytical gate capacitance modeling of III–V nanowire transistors EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz IEEE transactions on electron devices 60 (5), 1590-1599, 2013 | 27 | 2013 |
| Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene EG Marin, D Marian, G Iannaccone, G Fiori arXiv preprint arXiv:1904.09254, 2019 | 24 | 2019 |
| Multi-scale simulations of two dimensional material based devices: The NanoTCAD ViDES suite D Marian, EG Marin, M Perucchini, G Iannaccone, G Fiori Journal of Computational Electronics 22 (5), 1327-1337, 2023 | 21 | 2023 |
| A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ... IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021 | 21 | 2021 |
| An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure E Lopriore, EG Marin, G Fiori Nanoscale Horizons 7 (1), 41-50, 2022 | 20 | 2022 |
| A Comprehensive Physics-Based Current–Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs MS S. A. Ahsan, S. K. Singh, C. Yadav, E. G. Marín, A. Kloes IEEE Transactions on Electron Devices 67 (11), 5188-5195, 2020 | 19 | 2020 |
Francisco G. RuizTenured Professor, University of GranadaVerified email at ugr.es
