| Electrical properties of graphene-metal contacts T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ... Scientific reports 7 (1), 5109, 2017 | 229 | 2017 |
| Photodynamics and time-resolved fluorescence of azobenzene in solution: a mixed quantum-classical simulation T Cusati, G Granucci, M Persico Journal of the American Chemical Society 133 (13), 5109-5123, 2011 | 188 | 2011 |
| Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam Y Katagiri, T Nakamura, A Ishii, C Ohata, M Hasegawa, S Katsumoto, ... Nano letters 16 (6), 3788-3794, 2016 | 144 | 2016 |
| Semiempirical Hamiltonian for simulation of azobenzene photochemistry T Cusati, G Granucci, E Martínez-Núnez, F Martini, M Persico, S Vázquez The Journal of Physical Chemistry A 116 (1), 98-110, 2012 | 84 | 2012 |
| Growth‐Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation S Kataria, S Wagner, T Cusati, A Fortunelli, G Iannaccone, H Pandey, ... Advanced Materials Interfaces 4 (17), 1700031, 2017 | 82 | 2017 |
| Oscillator strength and polarization of the forbidden n→ π* band of trans-azobenzene: A computational study T Cusati, G Granucci, M Persico, G Spighi The Journal of chemical physics 128 (19), 2008 | 74 | 2008 |
| Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices X Li, X Shi, D Marian, D Soriano, T Cusati, G Iannaccone, G Fiori, Q Guo, ... Science Advances 9 (7), eade5706, 2023 | 64 | 2023 |
| Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori Physical Review Applied 8 (5), 054047, 2017 | 61 | 2017 |
| Ultralow specific contact resistivity in metal–graphene junctions via contact engineering V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ... Advanced Materials Interfaces 6 (1), 1801285, 2019 | 60 | 2019 |
| Photodynamics of azobenzene in a hindering environment L Creatini, T Cusati, G Granucci, M Persico Chemical Physics 347 (1-3), 492-502, 2008 | 43 | 2008 |
| High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study A Kuc, T Cusati, E Dib, AF Oliveira, A Fortunelli, G Iannaccone, T Heine, ... arXiv preprint arXiv:1806.10059, 2018 | 37 | 2018 |
| Intramolecular coupling study of the resonances in the four-wave mixing signal T Cusati, JL Paz, MC Salazar, AJ Hernández Physics Letters A 267 (1), 18-23, 2000 | 18 | 2000 |
| Electronic transport in 2d‐based printed fets from a multiscale perspective M Perucchini, D Marian, EG Marin, T Cusati, G Iannaccone, G Fiori Advanced Electronic Materials 8 (5), 2100972, 2022 | 16 | 2022 |
| Trajectory integration with potential energy discontinuities P Hurd, T Cusati, M Persico Journal of Computational Physics 229 (6), 2109-2116, 2010 | 14 | 2010 |
| Stacking and interlayer electron transport in T Cusati, A Fortunelli, G Fiori, G Iannaccone Physical Review B 98 (11), 115403, 2018 | 13 | 2018 |
| Study and characterization of resonances in the Four-wave mixing signal of a two-level system with intramolecular coupling JL Paz, T Cusati, MC Salazar, AJ Hernández Journal of Molecular Spectroscopy 211 (2), 198-210, 2002 | 12 | 2002 |
| Phonon-assisted carrier transport through a lattice-mismatched interface HS Yoon, J Oh, JY Park, JS Kang, J Kwon, T Cusati, G Fiori, ... NPG Asia Materials 11 (1), 14, 2019 | 11 | 2019 |
| Two-dimensional transistors based on MoS2 lateral heterostructures D Marian, E Dib, T Cusati, A Fortunelli, G Iannaccone, G Fiori 2016 IEEE International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2016 | 11 | 2016 |
| Vertical Heterostructures between Transition‐Metal Dichalcogenides—A Theoretical Analysis of the NbS2/WSe2 Junction Z Golsanamlou, P Kumari, L Sementa, T Cusati, G Iannaccone, ... Advanced Electronic Materials 8 (9), 2200020, 2022 | 9 | 2022 |
| Understanding the nature of metal-graphene contacts: A theoretical and experimental study T Cusati, G Fiori, A Gahoi, V Passi, A Fortunelli, M Lemme, G Iannaccone 2015 IEEE International Electron Devices Meeting (IEDM), 12.7. 1-12.7. 4, 2015 | 9 | 2015 |
