| Self-induced growth of vertical free-standing InAs nanowires on Si (111) by molecular beamepitaxy G Koblmüller, S Hertenberger, K Vizbaras, M Bichler, F Bao, JP Zhang, ... Nanotechnology 21 (36), 365602, 2010 | 161 | 2010 |
| III–V-on-silicon photonic integrated circuits for spectroscopic sensing in the 2–4 μm wavelength range R Wang, A Vasiliev, M Muneeb, A Malik, S Sprengel, G Boehm, ... Sensors 17 (8), 1788, 2017 | 132 | 2017 |
| Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers K Vizbaras, MC Amann Semiconductor Science and Technology 27 (3), 032001, 2012 | 126 | 2012 |
| Compact GaSb/silicon-on-insulator 2.0 x μm widely tunable external cavity lasers R Wang, A Malik, I Šimonytė, A Vizbaras, K Vizbaras, G Roelkens Optics express 24 (25), 28977-28986, 2016 | 74 | 2016 |
| High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111) S Hertenberger, S Funk, K Vizbaras, A Yadav, D Rudolph, J Becker, ... Applied Physics Letters 101 (4), 2012 | 65 | 2012 |
| Type-II InP-based lasers emitting at 2.55 μm S Sprengel, A Andrejew, K Vizbaras, T Gruendl, K Geiger, G Boehm, ... Applied Physics Letters 100 (4), 2012 | 60 | 2012 |
| High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μm wavelength range K Vizbaras, E Dvinelis, I Šimonytė, A Trinkūnas, M Greibus, R Songaila, ... Applied Physics Letters 107 (1), 2015 | 51 | 2015 |
| Diameter dependent optical emission properties of InAs nanowires grown on Si G Koblmüller, K Vizbaras, S Hertenberger, S Bolte, D Rudolph, J Becker, ... Applied Physics Letters 101 (5), 2012 | 49 | 2012 |
| 3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature K Vizbaras, MC Amann Electronics letters 47 (17), 980-981, 2011 | 39 | 2011 |
| Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-m Wavelength Range K Kashani-Shirazi, K Vizbaras, A Bachmann, S Arafin, MC Amann IEEE Photonics Technology Letters 21 (16), 1106-1108, 2009 | 37 | 2009 |
| Ultra-low resistive GaSb/InAs tunnel junctions K Vizbaras, M Törpe, S Arafin, MC Amann Semiconductor Science and Technology 26 (7), 075021, 2011 | 32 | 2011 |
| Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells S Sprengel, C Grasse, K Vizbaras, T Gruendl, MC Amann Applied Physics Letters 99 (22), 2011 | 31 | 2011 |
| Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range K Vizbaras, A Vizbaras, A Andrejew, C Grasse, S Sprengel, MC Amann Novel In-Plane Semiconductor Lasers XI 8277, 184-190, 2012 | 29 | 2012 |
| High-performance mid-infrared GaSb laser diodes for defence and sensing applications A Vizbaras, E Dvinelis, A Trinkūnas, I Šimonyte, M Greibus, M Kaušylas, ... Laser Technology for Defense and Security X 9081, 104-109, 2014 | 28 | 2014 |
| GaSb swept-wavelength lasers for biomedical sensing applications A Vizbaras, I Šimonytė, S Droz, N Torcheboeuf, A Miasojedovas, ... IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019 | 27 | 2019 |
| Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses I Nevinskas, K Vizbaras, A Trinkūnas, R Butkutė, A Krotkus Optics Letters 42 (13), 2615-2618, 2017 | 26 | 2017 |
| Comprehensive analysis of electrically-pumped GaSb-based VCSELs S Arafin, A Bachmann, K Vizbaras, A Hangauer, J Gustavsson, ... Optics Express 19 (18), 17267-17282, 2011 | 24 | 2011 |
| Widely tunable III–V/silicon lasers for spectroscopy in the short-wave infrared R Wang, B Haq, S Sprengel, A Malik, A Vasiliev, G Boehm, I Šimonytė, ... IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019 | 18 | 2019 |
| Swept-wavelength lasers based on GaSb gain-chip technology for non-invasive biomedical sensing applications in the 1.7–2.5 μm wavelength range A Vizbaras, I Šimonytė, A Miasojedovas, A Trinkūnas, T Bučiūnas, ... Biomedical optics express 9 (10), 4834-4849, 2018 | 15 | 2018 |
| High-performance single-spatial mode GaSb type-I laser diodes around 2.1 µm A Vizbaras, E Dvinelis, M Greibus, A Trinkunas, D Kovalenkovas, ... Quantum Sensing and Nanophotonic Devices XI 8993, 222-227, 2014 | 15 | 2014 |
Augustinas VizbarasBrolis Semiconductors/Brolis Sensor TechnologyVerified email at brolis-semicon.com
