| III–V-on-silicon photonic integrated circuits for spectroscopic sensing in the 2–4 μm wavelength range R Wang, A Vasiliev, M Muneeb, A Malik, S Sprengel, G Boehm, ... Sensors 17 (8), 1788, 2017 | 132 | 2017 |
| Widely tunable 2.3 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing R Wang, S Sprengel, A Vasiliev, G Boehm, J Van Campenhout, G Lepage, ... Photonics Research 6 (9), 858-866, 2018 | 77 | 2018 |
| Room-temperature vertical-cavity surface-emitting lasers at 4 μm with GaSb-based type-II quantum wells GK Veerabathran, S Sprengel, A Andrejew, MC Amann Applied Physics Letters 110 (7), 2017 | 76 | 2017 |
| Type-II InP-based lasers emitting at 2.55 μm S Sprengel, A Andrejew, K Vizbaras, T Gruendl, K Geiger, G Boehm, ... Applied Physics Letters 100 (4), 2012 | 60 | 2012 |
| 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits R Wang, S Sprengel, M Muneeb, G Boehm, R Baets, MC Amann, ... Optics express 23 (20), 26834-26841, 2015 | 59 | 2015 |
| Broad wavelength coverage 2.3 μm III-V-on-silicon DFB laser array R Wang, S Sprengel, G Boehm, R Baets, MC Amann, G Roelkens Optica 4 (8), 972-975, 2017 | 57 | 2017 |
| InP-based type-II quantum-well lasers and LEDs S Sprengel, C Grasse, P Wiecha, A Andrejew, T Gruendl, G Boehm, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1900909-1900909, 2013 | 54 | 2013 |
| III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors R Wang, M Muneeb, S Sprengel, G Boehm, A Malik, R Baets, MC Amann, ... Optics express 24 (8), 8480-8490, 2016 | 48 | 2016 |
| 2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit R Wang, S Sprengel, G Boehm, M Muneeb, R Baets, MC Amann, ... Optics express 24 (18), 21081-21089, 2016 | 47 | 2016 |
| GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3<? show= 1x (16)?> μm A Andrejew, S Sprengel, MC Amann Optics letters 41 (12), 2799-2802, 2016 | 44 | 2016 |
| Novel InP-and GaSb-based light sources for the near to far infrared S Stephan, D Frederic, A Markus-Christian Semiconductor Science and Technology 31 (11), 113005, 2016 | 39 | 2016 |
| Heterogeneously integrated III–V-on-silicon 2.3 x μm distributed feedback lasers based on a type-II active region R Wang, S Sprengel, A Malik, A Vasiliev, G Boehm, R Baets, MC Amann, ... Applied physics letters 109 (22), 2016 | 34 | 2016 |
| Wavelength dependence of efficiency limiting mechanisms in type-I mid-infrared GaInAsSb/GaSb lasers TD Eales, IP Marko, BA Ikyo, AR Adams, S Arafin, S Sprengel, MC Amann, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-9, 2017 | 32 | 2017 |
| Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells S Sprengel, C Grasse, K Vizbaras, T Gruendl, MC Amann Applied Physics Letters 99 (22), 2011 | 31 | 2011 |
| Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells S Sprengel, A Andrejew, F Federer, GK Veerabathran, G Boehm, ... Applied Physics Letters 106 (15), 2015 | 29 | 2015 |
| Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range K Vizbaras, A Vizbaras, A Andrejew, C Grasse, S Sprengel, MC Amann Novel In-Plane Semiconductor Lasers XI 8277, 184-190, 2012 | 29 | 2012 |
| InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures C Grasse, P Wiecha, T Gruendl, S Sprengel, R Meyer, MC Amann Applied Physics Letters 101 (22), 2012 | 27 | 2012 |
| Widely tunable III–V/silicon lasers for spectroscopy in the short-wave infrared R Wang, B Haq, S Sprengel, A Malik, A Vasiliev, G Boehm, I Šimonytė, ... IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019 | 18 | 2019 |
| GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate C Grasse, T Gruendl, S Sprengel, P Wiecha, K Vizbaras, R Meyer, ... Journal of crystal growth 370, 240-243, 2013 | 15 | 2013 |
| InP-based type-II heterostructure lasers for wavelengths up to 2.7 um S Sprengel, GK Veerabathran, A Andrejew, A Köninger, G Boehm, ... Novel In-Plane Semiconductor Lasers XIV 9382, 111-116, 2015 | 13 | 2015 |
