| Valence band anticrossing in GaBixAs1− x K Alberi, OD Dubon, W Walukiewicz, KM Yu, K Bertulis, A Krotkus Applied Physics Letters 91 (5), 2007 | 406 | 2007 |
| GaBiAs: A material for optoelectronic terahertz devices K Bertulis, A Krotkus, G Aleksejenko, V Pačebutas, R Adomavičius, ... Applied physics letters 88 (20), 2006 | 207 | 2006 |
| Terahertz frequency detection and identification of materials and objects RE Miles, XC Zhang, H Eisele, A Krotkus Springer Science & Business Media, 2007 | 203 | 2007 |
| Semiconductors for terahertz photonics applications A Krotkus Journal of Physics D: Applied Physics 43 (27), 273001, 2010 | 169 | 2010 |
| Terahertz emission from p-lnAs due to the instantaneous polarization R Adomavičius, A Urbanowicz, G Molis, A Krotkus, E Šatkovskis Applied physics letters 85 (13), 2463-2465, 2004 | 138 | 2004 |
| Picosecond carrier lifetime in GaAs implanted with high doses of As ions: an alternative material to low‐temperature GaAs for optoelectronic applications A Krotkus, S Marcinkevicius, J Jasinski, M Kaminska, HH Tan, C Jagadish Applied physics letters 66 (24), 3304-3306, 1995 | 122 | 1995 |
| THz emission from semiconductor surfaces VL Malevich, R Adomavičius, A Krotkus Comptes Rendus. Physique 9 (2), 130-141, 2008 | 113 | 2008 |
| Terahertz time-domain-spectroscopy system based on femtosecond Yb: fiber laser and GaBiAs photoconducting components V Pačebutas, A Bičiūnas, S Balakauskas, A Krotkus, G Andriukaitis, ... Applied Physics Letters 97 (3), 2010 | 102 | 2010 |
| Efficiency improvement by porous silicon coating of multicrystalline solar cells A Krotkus, K Grigoras, V Pačebutas, I Barsony, E Vazsonyi, M Fried, ... Solar Energy Materials and Solar Cells 45 (3), 267-273, 1997 | 96 | 1997 |
| Terahertz Emission from Tubular Pb(Zr,Ti)O3 Nanostructures JF Scott, HJ Fan, S Kawasaki, J Banys, M Ivanov, A Krotkus, J Macutkevic, ... Nano Letters 8 (12), 4404-4409, 2008 | 75 | 2008 |
| Non-stoichiometric semiconductor materials for terahertz optoelectronics applications A Krotkus, JL Coutaz Semiconductor science and technology 20 (7), S142, 2005 | 70 | 2005 |
| Multi-quantum well Ga (AsBi)/GaAs laser diodes with more than 6% of bismuth R Butkute, A Geizutis, V Pacebutas, B Cechavicius, V Bukauskas, ... Electronics letters 50 (16), 1155, 2014 | 68 | 2014 |
| The porous silicon emitter concept applied to multicrystalline silicon solar cells S Strehlke, D Sarti, A Krotkus, K Grigoras, C Lévy-Clément Thin Solid Films 297 (1-2), 291-295, 1997 | 68 | 1997 |
| Quantum dot materials for terahertz generation applications RR Leyman, A Gorodetsky, N Bazieva, G Molis, A Krotkus, E Clarke, ... Laser & Photonics Reviews 10 (5), 772-779, 2016 | 66 | 2016 |
| Spectral dependencies of terahertz emission from InAs and InSb R Adomavičius, G Molis, A Krotkus, V Sirutkaitis Applied Physics Letters 87 (26), 2005 | 60 | 2005 |
| Terahertz probing of onion-like carbon-PMMA composite films J Macutkevic, R Adomavicius, A Krotkus, D Seliuta, G Valusis, ... Diamond and Related Materials 17 (7-10), 1608-1612, 2008 | 59 | 2008 |
| Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs A Krotkus, K Bertulis, L Dapkus, U Olin, S Marcinkevičius Applied physics letters 75 (21), 3336-3338, 1999 | 59 | 1999 |
| Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications V Pačebutas, K Bertulis, G Aleksejenko, A Krotkus Journal of Materials Science: Materials in Electronics 20 (Suppl 1), 363-366, 2009 | 58 | 2009 |
| THz excitation spectra of AIIIBV semiconductors A Arlauskas, A Krotkus Semiconductor Science and Technology 27 (11), 115015, 2012 | 55 | 2012 |
| Be-doped low-temperature-grown GaAs material for optoelectronic switches A Krotkus, K Bertulis, M Kaminska, K Korona, A Wolos, J Siegert, ... IEE Proceedings-Optoelectronics 149 (3), 111-115, 2002 | 54 | 2002 |
Jacek JasinskiConn Center for Renewable Energy Research, University of LouisvilleVerified email at louisville.edu
