| Spin-torque and spin-Hall nano-oscillators T Chen, RK Dumas, A Eklund, PK Muduli, A Houshang, AA Awad, ... Proceedings of the IEEE 104 (10), 1919-1945, 2016 | 456 | 2016 |
| The VLSI handbook WK Chen CRC press, 1999 | 314 | 1999 |
| Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators S Sani, J Persson, SM Mohseni, Y Pogoryelov, PK Muduli, A Eklund, ... Nature communications 4 (1), 2731, 2013 | 150 | 2013 |
| 500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013 | 117 | 2013 |
| A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014 | 101 | 2014 |
| High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009 | 92 | 2009 |
| Direct observation and imaging of a spin-wave soliton with p-like symmetry S Bonetti, R Kukreja, Z Chen, F Macià, JM Hernàndez, A Eklund, ... Nature communications 6 (1), 8889, 2015 | 79 | 2015 |
| Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010 | 78 | 2010 |
| Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012 | 69 | 2012 |
| Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/gate dielectrics and TiN gate M von Haartman, BG Malm, M Ostling IEEE transactions on electron devices 53 (4), 836-843, 2006 | 54 | 2006 |
| 3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching AC Fischer, LM Belova, YGM Rikers, BG Malm, HH Radamson, ... Advanced Functional Materials 22 (19), 4004-4008, 2012 | 51 | 2012 |
| 1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/pMOSFETs M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ... IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003 | 51 | 2003 |
| Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017 | 47 | 2017 |
| SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ... IEEE electron device letters 29 (1), 125-127, 2008 | 47 | 2008 |
| Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ... Applied Physics Letters 86 (25), 2005 | 47 | 2005 |
| Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field A Eklund, S Bonetti, SR Sani, S Majid Mohseni, J Persson, S Chung, ... Applied Physics Letters 104 (9), 2014 | 41 | 2014 |
| A robust spacer gate process for deca-nanometer high-frequency MOSFETs J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ... Microelectronic Engineering 83 (3), 434-439, 2006 | 41 | 2006 |
| A 600° C TTL-based 11-stage ring oscillator in bipolar silicon carbide technology M Shakir, S Hou, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 39 (10), 1540-1543, 2018 | 38 | 2018 |
| Stochastic magnetic actuated random transducer devices based on perpendicular magnetic tunnel junctions L Rehm, CCM Capriata, S Misra, JD Smith, M Pinarbasi, BG Malm, ... Physical Review Applied 19 (2), 024035, 2023 | 37 | 2023 |
| Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling IEEE Transactions on Electron Devices 57 (10), 2664-2670, 2010 | 37 | 2010 |
Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
