WO2025239583A1 - Circuit board and semiconductor package - Google Patents
Circuit board and semiconductor packageInfo
- Publication number
- WO2025239583A1 WO2025239583A1 PCT/KR2025/005665 KR2025005665W WO2025239583A1 WO 2025239583 A1 WO2025239583 A1 WO 2025239583A1 KR 2025005665 W KR2025005665 W KR 2025005665W WO 2025239583 A1 WO2025239583 A1 WO 2025239583A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating layer
- circuit board
- electrode
- pattern
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
Definitions
- This embodiment relates to a circuit board and a semiconductor package.
- circuit boards applied for miniaturization of finished electronic products is also decreasing, and technologies related to multilayer circuit boards that configure more circuit layers within a circuit board of the same thickness are being actively researched.
- a circuit board is a substrate made by printing a circuit line pattern with a conductive material, such as copper, onto an electrically insulating substrate. It is a general term for a board immediately before electronic components are mounted. To densely mount numerous electronic components on a flat surface, the mounting locations of each component are determined, and the circuit patterns connecting the components are printed and secured onto the flat surface.
- Circuit boards comprise multiple insulating layers arranged vertically. Recently, a structure has been proposed that utilizes Photo-Imageable Dielectric (PID) layers within each insulating layer to achieve thinner circuit boards.
- PID Photo-Imageable Dielectric
- PID multilayer structures suffer from warpage due to their low rigidity.
- the present embodiment provides a circuit board and semiconductor package capable of minimizing warpage by reinforcing rigidity while reducing thickness in a structure in which multiple insulating layers are arranged.
- a circuit board includes a first insulating layer; a second insulating layer disposed on the first insulating layer and made of the same material as the first insulating layer; a third insulating layer disposed between the first insulating layer and the second insulating layer and made of a different material from the first insulating layer; a first via electrode penetrating the upper and lower surfaces of the first insulating layer; and a second via electrode penetrating at least a portion of the second insulating layer, wherein a vertical length of the first via electrode is longer than a vertical length of the second via electrode.
- the first insulating layer and the second insulating layer may be prepreg (PPG).
- the third insulating layer may be a PID (Photo-Imageable Dielectric) or ABF (Ajinomoto Build-up Film).
- the third insulating layer may be provided in multiple numbers and placed between the first insulating layer and the second insulating layer.
- the third insulating layer may have two or fewer layers.
- It may include a pattern electrode arranged on the surface of the second insulating layer; a pattern electrode arranged on the surface of the third insulating layer; and a through electrode vertically connecting the pattern electrode of the second insulating layer and the pattern electrode of the third insulating layer.
- the pattern electrode of the second insulating layer, the pattern electrode of the third insulating layer, and the through electrode can form an inductor.
- a fourth insulating layer is disposed below the first insulating layer and is made of the same material as the first insulating layer, and the third insulating layer can be disposed between the first insulating layer and the fourth insulating layer.
- the second insulating layer, the third insulating layer, and the circuit pattern arranged on the upper side may be symmetrical with the fourth insulating layer, the third insulating layer, and the circuit pattern arranged on the lower side.
- a semiconductor package includes a main substrate; and a circuit board coupled to the main substrate, wherein the circuit board includes a first insulating layer; a second insulating layer disposed on the first insulating layer and made of the same material as the first insulating layer; a third insulating layer disposed between the first insulating layer and the second insulating layer and made of a different material from the first insulating layer; a first via electrode penetrating an upper surface and a lower surface of the first insulating layer; and a second via electrode penetrating at least a portion of the second insulating layer, wherein a vertical length of the first via electrode is longer than a vertical length of the second via electrode.
- the vertical height of the circuit board can be reduced due to the material difference between the multiple insulating layers, so there is an advantage in that miniaturization is possible.
- the rigidity of the circuit board can be reinforced by placing the first insulating layer, the second insulating layer, and the fourth insulating layer, which are composed of prepregs, between the third insulating layers.
- Figure 1 is a cross-sectional view of a circuit board according to a first embodiment of the present invention.
- Figures 2 to 5 are drawings for explaining various application examples of a circuit board according to the first embodiment of the present invention.
- Fig. 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
- Figure 7 is a cross-sectional view of a circuit board according to a second embodiment of the present invention.
- Figure 8 is a cross-sectional view of a circuit board according to a third embodiment of the present invention.
- Fig. 9 is a cross-sectional view showing the layout structure of a circuit board according to a comparative example.
- Fig. 10 is a drawing measuring stress distribution in a circuit board according to a comparative example.
- Fig. 11 is a drawing measuring stress distribution in a circuit board according to an embodiment of the present invention.
- the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention.
- the singular may also include the plural unless specifically stated in the phrase, and when it is described as "A and/or at least one (or more) of B, C," it may include one or more of all combinations that can be combined with A, B, and C.
- a component when a component is described as being 'connected', 'coupled' or 'connected' to another component, it may include not only cases where the component is directly connected, coupled or connected to the other component, but also cases where the component is 'connected', 'coupled' or 'connected' by another component between the component and the other component.
- “above” or “below” includes not only cases where the two components are in direct contact with each other, but also cases where one or more other components are formed or arranged between the two components. Also, when it is expressed as “above” or “below”, it can include the meaning of the downward direction as well as the upward direction based on one component.
- FIG. 1 is a cross-sectional view of a circuit board according to a first embodiment of the present invention
- FIGS. 2 to 5 are drawings for explaining various application examples of the circuit board according to the first embodiment of the present invention
- FIG. 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
- a circuit board (10) may include a first insulating layer (100), a second insulating layer (110), a third insulating layer, a fourth insulating layer (120), a plurality of pad portions, a plurality of via electrodes, a plurality of pattern electrodes, and a plurality of through electrodes.
- the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may be formed of the same material.
- the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may include any insulator such as a photocurable material and/or a thermocurable material.
- the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may be formed of a prepreg (PPG) including glass fiber in a resin.
- the resin of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may include at least one of an epoxy resin, a bismaleimide triazine resin (BT resin), and a phenol resin.
- BT resin bismaleimide triazine resin
- a phenol resin a bismaleimide triazine resin
- the resin of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) is used as an insulating layer resin, it may include a reinforcing material made of glass fiber or aramid fiber.
- the material constituting the third insulating layer may be different from the material constituting any one of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120).
- the material of the third insulating layer may be any insulator such as photocurable and/or thermosetting.
- the material of the third insulating layer may be an insulator in which inorganic and/or organic fillers are dispersed in a resin such as Ajinomoto Build-up Film (ABF), a product released by Ajinomoto Co., Ltd., as a PID (Photo-Imageable Dielectric) or thermosetting insulator.
- a circuit board (10) according to the present embodiment will be described as an example in which a second insulating layer (110) is disposed on a first insulating layer (100), a fourth insulating layer (120) is disposed under the first insulating layer (100), and a third insulating layer is disposed on at least one of between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and under the lower portion of the fourth insulating layer (120).
- the circuit board (10) may be understood as having an upper build-up layer (101) disposed on a first insulating layer (100), a lower build-up layer (102) disposed under the first insulating layer (100), and the upper build-up layer (101) composed of a second insulating layer (110) and a third insulating layer, and the lower build-up layer (102) composed of a fourth insulating layer (120) and a third insulating layer.
- the first insulating layer (100) may be disposed between the upper build-up layer (101) and the lower build-up layer (102).
- the first insulating layer (100) may be a prepreg (PPG) as described above.
- the first insulating layer (100) may also be called a core layer.
- the first insulating layer (100) may have a first thickness (H1) in the vertical direction.
- the thickness of the first insulating layer (100) may be 40 um or more and 100 um or less.
- the thickness of the first insulating layer (100) is 40 um or less, the rigidity of the first insulating layer (100) disposed at the center of the circuit board (10) is reduced, and thus the circuit board (10) may be vulnerable to warpage. If the thickness of the first insulating layer (100) is 100 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
- the circuit board (10) may have a structure in which the upper build-up layer (101) and the lower build-up layer (102) are symmetrical with respect to the first insulating layer (100).
- the circuit pattern in the upper build-up layer (101) and the circuit pattern in the lower build-up layer (102) may also be arranged symmetrically with respect to the first insulating layer (100).
- the second insulating layer (110) may be disposed on the first insulating layer (100).
- the second insulating layer (110) and the first insulating layer (100) may be spaced apart from each other in the vertical direction, and at least one third insulating layer may be disposed therebetween.
- the second insulating layer (110) may be a prepreg (PPG).
- the second insulating layer (110) may have a second thickness (H2) in the vertical direction.
- the second thickness (H2) may be smaller than the first thickness (H1).
- the second thickness (H2) may be 15 um or more and 30 um or less.
- the second thickness (H2) is 15 um or less, the supporting force of the plurality of third insulating layers disposed on the upper and lower sides may decrease, causing warping of the circuit board (10). If the second thickness (H2) is 30 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
- the fourth insulating layer (120) may be arranged under the first insulating layer (100).
- the fourth insulating layer (120) and the first insulating layer (100) may be spaced apart from each other in the vertical direction, and at least one third insulating layer may be arranged therebetween.
- the fourth insulating layer (120) may be a prepreg (PPG).
- the fourth insulating layer (120) may have a second thickness (H2) in the vertical direction.
- the thickness of the fourth insulating layer (120) may be the same as the thickness of the second insulating layer (110).
- the thickness (H2) of the fourth insulating layer (120) may be 15 um or more and 30 um or less.
- the fourth thickness (H2) is 15 um or less, the supporting force of the plurality of third insulating layers arranged above and below may decrease, causing warping of the circuit board (10). If the fourth thickness (H2) is 30 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
- the third insulating layer may be disposed on at least one of the following: between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower portion of the fourth insulating layer (120).
- the third insulating layer may be laminated in multiple layers in the vertical direction.
- the third insulating layer may be provided in two or fewer layers on at least one of the following: between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower portion of the fourth insulating layer (120). Accordingly, cracks due to the fourth insulating layer (120) having relatively weak rigidity can be minimized.
- the third insulating layer may include the 3-1 insulating layer to the 3-8 insulating layer (131, 132, 133, 134, 135, 136, 137, 138).
- the third insulating layer includes a 3-1 insulating layer (131) disposed on the 1st insulating layer (100), a 3-2 insulating layer (132) disposed between the 3-1 insulating layer (131) and the 2nd insulating layer (110), a 3-3 insulating layer (133) disposed on the 2nd insulating layer (110), a 3-4 insulating layer (134) disposed on the 3-3 insulating layer (133), a 3-5 insulating layer (135) disposed on the lower surface of the 1st insulating layer (100), a 3-6 insulating layer (136) disposed between the 3-5 insulating layer (135) and the 4th insulating layer (120), a 3-7 insulating layer (137) disposed on the lower surface of the 4th insulating layer (120), and a 3-7 insulating layer (137) disposed on the lower surface of the 3-7 insulating layer (137). It may include a 3-8 insulating layer (138).
- the 3-1 to 3-8 insulating layers may be arranged vertically between the first insulating layer (100) and the second insulating layer (110), on the upper side of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower side of the fourth insulating layer (120), respectively.
- the third insulating layer may be a Photo-Imageable Dielectric (PID) or an Ajinomoto Build-up Film (ABF).
- the third insulating layer may have a third thickness (H3) in the vertical direction.
- the third thickness (H3) may be smaller than the second thickness (H2).
- the third thickness (H3) may be 5 ⁇ m or more and 30 ⁇ m or less.
- the third thickness (H3) is 5 ⁇ m or less, it may be difficult to form a via electrode and a pad portion penetrating the third insulating layer.
- the third thickness (H3) is 30 ⁇ m or more, there is a concern that the thickness of the circuit board (10) may be excessively increased.
- the plurality of pad parts are a first pad part (141) disposed on the upper surface of the first insulating layer (100), a second pad part (142) disposed on the lower surface of the first insulating layer (100), a third pad part (143) disposed on the upper surface of the 3-1 insulating layer (131), a fourth pad part (144) disposed on the upper surface of the 3-2 insulating layer (132), a fifth pad part (145) disposed on the upper surface of the 2nd insulating layer (110), a sixth pad part (146) disposed on the upper surface of the 3-3 insulating layer (133), a seventh pad part (147) disposed on the upper surface of the 3-4 insulating layer (134), an eighth pad part (148) disposed on the lower surface of the 3-5 insulating layer (135), a ninth pad part (149) disposed on the lower surface of the 3-6 insulating layer (136), and a fourth pad part (120).
- It may include a 10th pad part (150) arranged on the lower surface, an 11th pad part (151) arranged on the lower surface of the 3rd-7th insulating layer (137), and a 12th pad part (152) arranged on the lower surface of the 3rd-8th insulating layer (138).
- the first pad part (141) is embedded in the lower surface of the 3-1 insulating layer (131), the third pad part (143) is embedded in the lower surface of the 3-2 insulating layer (132), the fourth pad part (144) is embedded in the lower surface of the 2nd insulating layer (110), the fifth pad part (145) is embedded in the lower surface of the 3-3 insulating layer (133), the sixth pad part (146) is embedded in the lower surface of the 3-4 insulating layer (134), the second pad part (142) is embedded in the upper surface of the 3-5 insulating layer (135), the eighth pad part is embedded in the upper surface of the 3-6 insulating layer (136), the ninth pad part (149) is embedded in the upper surface of the 4th insulating layer (120), and the tenth pad part (150) is embedded in the upper surface of the It can also be understood that the 11th pad portion (151) is embedded in the upper surface of the 3-7th insulating layer (137), and that the 11th pad portion (151) is embedded in the upper surface of
- the seventh pad portion (147) and the twelfth pad portion (152) can be respectively placed on the upper and lower surfaces of the circuit board (10).
- a plurality of via electrodes are arranged to penetrate the first insulating layer (100) and electrically connect the first pad portion (141) and the second pad portion (142), a first via electrode (153) arranged to penetrate the 3-1 insulating layer (131) and electrically connect the first pad portion (141) and the third pad portion (143), a third via electrode (155) arranged to penetrate the 3-2 insulating layer (132) and electrically connect the third pad portion (143) and the fourth pad portion (144), a fourth via electrode (156) arranged to penetrate the 2nd insulating layer (110) and electrically connect the fourth pad portion (144) and the fifth pad portion (145), and a third via electrode (156) arranged to penetrate the 3-3 insulating layer (133) and electrically connect the fifth pad portion (145) and the sixth pad portion (146).
- the first to eleventh via electrodes (153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163) may be arranged to overlap each other in the vertical direction.
- the first to sixth via electrodes (153, 154, 155, 156, 157, 158) may have a shape in which the horizontal width decreases as they go downward, and a shape in which the cross-sectional area decreases, respectively.
- the seventh to eleventh via electrodes (159, 160, 161, 162, 163) may have a shape in which the horizontal width increases as they go downward, and a shape in which the cross-sectional area increases, respectively.
- the vertical length of the first via electrode (153) penetrating the first insulating layer (100) may be longer than the vertical length of the fourth via electrode (156) penetrating the second insulating layer (110) or the vertical length of the ninth via electrode (161) penetrating the fourth insulating layer (120).
- the vertical length of the first via electrode (153) may be formed to be longer than the vertical length of any one of the second to eleventh via electrodes (154, 155, 156, 157, 158, 159, 160, 161, 162, 163). This is due to the difference in vertical thickness between the first insulating layer (100) and other insulating layers and the arrangement structure of each of the plurality of pad portions.
- the via electrode By forming the length of the via electrode long in the first insulating layer (100) having relatively high rigidity and forming the length of the via electrode short in the region of the second to fourth insulating layers (110, 120, 130) having relatively low rigidity, the via electrode can be compactly combined within the circuit board.
- the circuit board (10) may include a plurality of pattern electrodes and a plurality of through-hole electrodes.
- the plurality of pattern electrodes may be referred to as a plurality of pad portions, and the plurality of through-hole electrodes may be referred to as a plurality of via electrodes, depending on the functional difference between the plurality of pattern electrodes and the plurality of through-hole electrodes.
- the plurality of pattern electrodes may also be referred to as a plurality of pad portions, and the plurality of through-hole electrodes may also be referred to as a plurality of via electrodes.
- the plurality of pattern electrodes include a first pattern electrode (171) disposed on the upper surface of the first insulating layer (100), a second pattern electrode (177) disposed on the lower surface of the first insulating layer (100), a third pattern electrode (172) disposed on the upper surface of the 3-1 insulating layer (131), a fourth pattern electrode (173) disposed on the upper surface of the 3-2 insulating layer (132), a fifth pattern electrode (174) disposed on the upper surface of the 2nd insulating layer (110), a sixth pattern electrode (175) disposed on the upper surface of the 3-3 insulating layer (133), a seventh pattern electrode (176) disposed on the upper surface of the 3-4 insulating layer (134), an eighth pattern electrode (178) disposed on the lower surface of the 3-5 insulating layer (135), and a ninth pattern electrode (179) disposed on the lower surface of the 3-6 insulating layer (136).
- It may include a 10th pattern electrode (180) arranged on the lower surface of the 4th insulating layer (120), an 11th pattern electrode (181) arranged on the lower surface of the 3rd-7th insulating layer (137), and a 12th pattern electrode (182) arranged on the lower surface of the 3rd-8th insulating layer (138).
- the horizontal length of any one of the pattern electrodes among the first to sixth pattern electrodes (171, 177, 172, 173, 174, 175) and the eighth to eleventh pattern electrodes (178, 179, 180, 181) may be longer than the horizontal length of any one of the pad portions among the first to twelfth pad portions (141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152).
- the horizontal length of any one of the pattern electrodes among the first to sixth pattern electrodes (171, 177, 172, 173, 174, 175) and the eighth to eleventh pattern electrodes (178, 179, 180, 181) may be at least twice the horizontal length of any one of the pad portions among the first to twelfth pad portions (141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152).
- the seventh pattern electrode (176) disposed on the upper surface of the circuit board (10) and the twelfth pattern electrode (182) disposed on the lower surface of the circuit board (10) may each include two or more regions divided horizontally.
- the seventh pattern electrode (176) includes a 7-1 pattern electrode (176a) and a 7-2 pattern electrode (176b) spaced apart horizontally, and the 7-1 pattern electrode (176a) and the 7-2 pattern electrode (176b) may each be electrically connected to the 6th pattern electrode (175).
- the 12th pattern electrode (182) includes a 12-1st pattern electrode (182a) and a 12-2nd pattern electrode (182b) that are spaced apart in the horizontal direction, and the 12-1st pattern electrode (182a) and the 12-2nd pattern electrode (182b) can each be electrically connected to the 11th pattern electrode (181).
- the first pattern electrode (171) may overlap with the first pad portion (141) in a horizontal direction.
- the second pattern electrode (177) may overlap with the second pad portion (142) in a horizontal direction.
- the third pattern electrode (172) may overlap with the third pad portion (143) in a horizontal direction.
- the fourth pattern electrode (173) may overlap with the fourth pad portion (144) in a horizontal direction.
- the fifth pattern electrode (174) may overlap with the fifth pad portion (145) in a horizontal direction.
- the sixth pattern electrode (175) may overlap with the sixth pad portion (146) in a horizontal direction.
- the seventh pattern electrode (176) may overlap with the seventh pad portion (147) in a horizontal direction.
- the eighth pattern electrode (178) may overlap with the eighth pad portion (148) in a horizontal direction.
- the ninth pattern electrode (179) may overlap horizontally with the ninth pad portion (149).
- the tenth pattern electrode (180) may overlap horizontally with the tenth pad portion (150).
- the eleventh pattern electrode (181) may overlap horizontally with the eleventh pad portion (151).
- the twelfth pattern electrode (182) may overlap horizontally with the twelfth pad portion (152).
- a plurality of through electrodes are arranged to penetrate the 3-1 insulating layer (131) and electrically connect the first pattern electrode (171) and the third pattern electrode (172), a first through electrode (183) arranged to penetrate the 3-2 insulating layer (132) and electrically connect the third pattern electrode (172) and the fourth pattern electrode (173), a third through electrode (185) arranged to penetrate the 2nd insulating layer (110) and electrically connect the fourth pattern electrode (173) and the fifth pattern electrode (174), a fourth through electrode (186) arranged to penetrate the 3-3 insulating layer (133) and electrically connect the fifth pattern electrode (174) and the sixth pattern electrode (175), and a fourth through electrode (186) arranged to penetrate the 3-4 insulating layer (134) and electrically connect the sixth pattern
- the first to tenth penetration electrodes (183, 184, 185, 186, 187, 188, 189, 190, 191, 192) may be provided in multiple numbers and spaced apart in the horizontal direction.
- the first through-hole electrode (183) may overlap horizontally with the second via electrode (154).
- the second through-hole electrode (184) may overlap horizontally with the third via electrode (155).
- the third through-hole electrode (185) may overlap horizontally with the fourth via electrode (156).
- the fourth through-hole electrode (186) may overlap horizontally with the fifth via electrode (157).
- the fifth through-hole electrode (187) may overlap horizontally with the sixth via electrode (158).
- the sixth through-hole electrode (188) may overlap horizontally with the seventh via electrode (159).
- the seventh through-hole electrode (189) may overlap horizontally with the eighth via electrode (160).
- the eighth through-hole electrode (190) may overlap horizontally with the ninth via electrode (161).
- the ninth through electrode (191) may overlap horizontally with the tenth via electrode (162).
- the tenth through electrode (192) may overlap horizontally with the eleventh via electrode (163).
- the first to fifth through-hole electrodes (183, 184, 185, 186, 187) may have a shape in which the horizontal width and cross-sectional area decrease as they go downward, respectively.
- the sixth to tenth through-hole electrodes (188, 189, 190, 191, 192) may have a shape in which the horizontal width and cross-sectional area increase as they go downward, respectively.
- the vertical length of each of the first to tenth through-hole electrodes (183, 184, 185, 186, 187, 188, 189, 190, 191, 192) may be shorter than the vertical length of the first via electrode (153).
- the first pattern electrode (171), the third to seventh pattern electrodes (172, 173, 174, 175, 176), and the first to fifth through-hole electrodes (183, 184, 185, 186, 187) can form an inductor together with an insulating layer within the circuit board (10).
- the second pattern electrode (177), the eighth to twelfth pattern electrodes (178, 179, 180, 181, 182), and the sixth to tenth through-hole electrodes (188, 189, 190, 191, 192) can form an inductor together with an insulating layer within the circuit board (10).
- the circuit board (10) can have a structure in which a plurality of inductors are arranged above and below the first insulating layer (100).
- the vertical height of the circuit board can be reduced due to the material difference between the multiple insulating layers, so there is an advantage in that miniaturization is possible.
- the rigidity of the circuit board can be reinforced by placing the first insulating layer, the second insulating layer, and the fourth insulating layer, which are composed of prepregs, between the third insulating layers.
- FIGS. 2 to 5 are drawings showing various application examples of a circuit board (10) according to the first embodiment of the present invention.
- a first protective layer (198) and a second protective layer (199) may be disposed on the upper and lower surfaces of the circuit board (10), respectively.
- the first protective layer (198) and the second protective layer (199) may perform a function of preventing a short circuit between solders due to low wettability with the solder when a semiconductor element is disposed on the surface of the circuit board (10) using a material such as solder.
- the first protective layer (198) and the second protective layer (199) may each use a photocurable insulating material.
- the first protective layer (198) and the second protective layer (199) may use a solder resist.
- the first protective layer (198) may include a through hole (198a) for exposing the seventh pattern electrode (176) and the seventh pad portion (147) upward.
- the second protective layer (199) may include a through hole (199a) for exposing the 12th pattern electrode (182) and the 12th pad portion (152) downward.
- two or more regions can be mutually divided based on the first insulating layer (100) in the circuit board (10) according to the first embodiment.
- the plurality of divided regions can include a first circuit board (20) in which the 3-1st insulating layer to the 3-4th insulating layer (131, 132, 133, 134) are respectively arranged on the upper and lower surfaces with the second insulating layer (110) as the center, and a second circuit board (30) in which the 3-5th insulating layer to the 3-8th insulating layer (135, 136, 137, 138) are respectively arranged on the upper and lower surfaces with the fourth insulating layer (130) as the center. That is, multiple circuit boards capable of performing the function of an inductor can be manufactured by manufacturing a single circuit board (10).
- the seventh pattern electrode (176) and the seventh pad portion (147) can be exposed upward through the through hole (198a) of the first protective layer (198) with respect to the first circuit board (20), and the first pattern electrode (171) and the first pad portion (141) can be exposed downward through the through hole (199a) of the second protective layer (199).
- the first via electrode (153) in the first insulating layer (100) may be omitted in the description of the circuit board (10) according to the first embodiment.
- the upper and lower regions of the circuit board (10) according to the first embodiment may be ground. Accordingly, a first surface (133a), which is a region where the 3-3rd insulating layer (133) and the 3-4th insulating layer (134) are ground, and a second surface (137a), which is a region where the 3-7th insulating layer (137) and the 3-8th insulating layer (138) are ground, may be formed on the upper and lower surfaces of the circuit board, respectively.
- the first surface (133a) may be disposed on the upper surface of the second insulating layer (110).
- the second surface (137a) may be disposed on the lower surface of the 4th insulating layer (120).
- the first protective layer (198) and the second protective layer (199) are arranged on the first surface (133a) and the second surface (137a), respectively, so that the fifth pad portion (145) and the fifth pattern electrode (174), and the tenth pad portion (150) and the tenth pattern electrode (180) can be exposed upward and downward.
- Figure 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
- the circuit board according to an embodiment of the present invention may be an inductor board that functions as an inductor. Accordingly, compared to conventional methods of separately manufacturing and mounting inductor elements on a board, this circuit board can be miniaturized, and the production process can be simplified by joining different types of boards.
- a semiconductor package according to an embodiment of the present invention may include a main substrate (200) and a circuit substrate (10) bonded to the main substrate (200).
- the main substrate (200) may include a fifth insulating layer (210), a sixth insulating layer (220), and a seventh insulating layer (230) that are stacked in a vertical direction.
- the fifth to seventh insulating layers (210, 220, 230) may be prepreg (PPG).
- the main substrate (200) may include a 13th pad portion (241) disposed on the upper surface of the 5th insulating layer (210), a 14th pad portion (242) disposed on the upper surface of the 6th insulating layer (220), a 15th pad portion (243) disposed on the upper surface of the 7th insulating layer (230), and a 16th pad portion (244) disposed on the lower surface of the 7th insulating layer (230).
- the main board (200) may include a 12th via electrode (251) that penetrates the 5th insulating layer (210) and electrically connects the 13th pad portion (241) and the 14th pad portion (242), a 13th via electrode (252) that electrically connects the 14th pad portion (242) and the 15th pad portion (243) of the 6th insulating layer (220), and a 14th via electrode (253) that penetrates the 7th insulating layer (230) and electrically connects the 15th pad portion (243) and the 16th pad portion (244).
- a 12th via electrode (251) that penetrates the 5th insulating layer (210) and electrically connects the 13th pad portion (241) and the 14th pad portion (242
- a 13th via electrode (252) that electrically connects the 14th pad portion (242) and the 15th pad portion (243) of the 6th insulating layer (220
- a 14th via electrode (253) that penetrates the 7th insulating layer (230) and electrically connects
- the vertical length of the 14th via electrode (253) may be longer than the vertical length of the 12th via electrode (251) or the 13th via electrode (252).
- the main substrate (200) may include a 13th pattern electrode (261) disposed on the upper surface of the 5th insulating layer (210), a 14th pattern electrode (262) disposed on the upper surface of the 6th insulating layer (220), a 15th pattern electrode (263) disposed on the upper surface of the 7th insulating layer (230), and a 16th pattern electrode (264) disposed on the lower surface of the 7th insulating layer (230).
- the main substrate (200) may include an 11th through electrode (271) connecting the 13th pattern electrode (261) and the 14th pattern electrode (262), a 12th through electrode (272) connecting the 14th pattern electrode (262) and the 15th pattern electrode (263), and a 13th through electrode (273) connecting the 15th pattern electrode (263) and the 16th pattern electrode (264).
- the vertical length of the 13th penetration electrode (273) may be longer than the vertical length of the 11th penetration electrode (271) or the 12th penetration electrode (272).
- the 12th pattern electrode (182) arranged on the lower surface of the circuit board (10) can be connected to the 13th pattern electrode (271) through solder balls (290), respectively.
- the circuit board (10) can function as an inductor on the main board (200). That is, the circuit board (10) itself can be an inductor.
- a recess (not shown) having a concave shape downward compared to other areas may be formed on the upper surface of the main substrate (200).
- the recess may have a shape penetrating the fifth insulating layer (210) or the fifth insulating layer (210) and the sixth insulating layer (220).
- the circuit board (10) may be placed within the recess and electrically connected to a circuit pattern formed on the bottom surface of the recess. Accordingly, the vertical height of the semiconductor package may be reduced.
- Figure 7 is a cross-sectional view of a circuit board according to a second embodiment of the present invention.
- This embodiment is identical to the first embodiment in other respects, with the exception that the second and fourth insulating layers are omitted. Therefore, only the characteristic aspects of this embodiment will be described below, and the description of the first embodiment will be used for the remaining portions.
- the second insulating layer (110) and the fourth insulating layer (140) may be omitted from the circuit board (10) according to the first embodiment.
- a third insulating layer made of the same material as the third insulating layer may be disposed in the areas where the second insulating layer (110) and the fourth insulating layer (140) are disposed in the circuit board (10) according to the first embodiment.
- the 3-9 insulating layer (310) is disposed between the 3-2 insulating layer (132) and the 3-3 insulating layer (133), and the 3-10 insulating layer (320) is disposed between the 3-6 insulating layer (136) and the 3-7 insulating layer (137).
- the circuit patterns in the 3rd-9th insulating layer (310) and the 3rd-10th insulating layer (320) are described based on the description of the circuit patterns in the 2nd insulating layer (110) and the 4th insulating layer (120) of the 1st embodiment.
- the thickness of the circuit board (40) can be made thinner as the relatively thick second insulating layer and fourth insulating layer are replaced with a relatively thin third insulating layer made of PID (Photo-Imageable Dielectric) or ABF (Ajinomoto Build-up Film) material, but the rigidity can be weakened compared to the first embodiment.
- PID Photo-Imageable Dielectric
- ABF Ajinomoto Build-up Film
- Figure 8 is a cross-sectional view of a circuit board according to a third embodiment of the present invention.
- the circuit board (50) may omit the second pattern electrode (177), the eighth to twelfth pattern electrodes (178, 179, 180, 181, 182), and the sixth to tenth through electrodes (188, 189, 190, 191, 192) from the circuit board according to the first embodiment.
- the rigidity of the circuit board (50) may be reinforced through the second insulating layer (110) and the fourth insulating layer (120), but the bending effect may be reduced compared to the first embodiment due to the asymmetry of the upper and lower circuit patterns with respect to the first insulating layer (100), and the yield may be reduced because the manufacturing of a plurality of inductor boards is impossible as in FIG. 4.
- FIG. 9 is a cross-sectional view showing the layout structure of a circuit board according to a comparative example
- FIG. 10 is a drawing measuring stress distribution in a circuit board according to a comparative example
- FIG. 11 is a drawing measuring stress distribution in a circuit board according to an embodiment of the present invention.
- a circuit board according to a comparative example includes a first insulating layer (1100) which is a corresponding configuration of a first insulating layer (100) of a circuit board (10) according to an embodiment of the present invention, and a third insulating layer (1210, 1220, 1230, 1240, 1250) which is a corresponding configuration of a third insulating layer of a circuit board (10) according to an embodiment of the present invention.
- the third insulating layers (1210, 1220, 1230, 1240, 1250) are implemented as five sheets and are arranged in a vertical direction on the upper surface of the first insulating layer (1100), and a pad portion and a via electrode are arranged on each layer. That is, the circuit board according to the comparative example is a case where the third insulating layer is not arranged in an upper and lower symmetrical structure based on the first insulating layer (1100), but is arranged only on one side.
- the first insulating layer (100) has a plurality of third insulating layers (131, 132, 133, 134) and circuit patterns within the third insulating layers (131, 132, 133, 134) are arranged symmetrically in the vertical direction with respect to the first insulating layer (100), and thus it can be confirmed that the stress within the circuit board (10) is also relatively uniformly distributed across the entire region.
- the first insulating layer (100) according to an embodiment of the present invention generates a relatively low stress compared to the stress generated at the boundary of the first insulating layer (1100) according to a comparative example, and thus the bending phenomenon of the circuit board (10) is minimized.
- a circuit board having the characteristics of the invention described above when used in IT devices such as smartphones, server computers, TVs, or home appliances, it can stably perform functions such as signal transmission or power supply.
- a circuit board having the characteristics of the invention when a circuit board having the characteristics of the invention performs a semiconductor package function, it can safely protect semiconductor chips from external moisture or contaminants, and can solve problems such as leakage current or electrical shorts between terminals, or electrical open circuits in terminals supplying semiconductor chips.
- problems such as leakage current or electrical shorts between terminals, or electrical open circuits in terminals supplying semiconductor chips.
- the circuit board having the characteristics of the invention described above can maintain the stable function of IT devices or home appliances, thereby enabling the entire product and the circuit board to which the invention is applied to achieve functional integration or technical interoperability with each other.
- a circuit board having the characteristics of the invention described above When a circuit board having the characteristics of the invention described above is used in a transportation device such as a vehicle, it can solve the problem of signal distortion transmitted to the transportation device, safely protect the semiconductor chip controlling the transportation device from external sources, and solve the problem of leakage current or electrical short circuit between terminals, or electrical open of the terminal supplying the semiconductor chip, thereby further improving the stability of the transportation device. Accordingly, the transportation device and the circuit board to which the present invention is applied can achieve functional integration or technical interoperability with each other.
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Abstract
Description
본 실시예는 회로기판 및 반도체 패키지에 관한 것이다.This embodiment relates to a circuit board and a semiconductor package.
최근 전자제품 관련 기술은 다기능화 및 고속화의 추세로 진행되고 있으며, 이러한 추세에 대응하기 위해 반도체칩 제조 기술 역시 빠른 속도로 발전하고 있다.Recently, electronic product technology has been moving toward multifunctionality and high-speed operation, and to respond to this trend, semiconductor chip manufacturing technology is also developing at a rapid pace.
특히 완성된 전자제품의 소형화를 위해 적용되는 회로기판의 두께 역시 감소되고 있으며, 동일한 두께의 회로기판 내에 보다 많은 회로층들을 구성한 다층회로기판에 관련된 기술들이 활발하게 연구되고 있다.In particular, the thickness of circuit boards applied for miniaturization of finished electronic products is also decreasing, and technologies related to multilayer circuit boards that configure more circuit layers within a circuit board of the same thickness are being actively researched.
회로기판은 전기 절연성 기판에 구리와 같은 전도성 재료로 회로라인 패턴을 인쇄하여 형성한 것으로, 전자소자를 탑재하기 직전의 기판(Board)을 총칭한다. 여러 종류의 많은 전자 소자를 평판 위에 밀집 탑재하기 위해, 각 부품의 장착 위치를 확정하고, 부품을 연결하는 회로 패턴을 평판 표면에 인쇄하여 고정한다.A circuit board is a substrate made by printing a circuit line pattern with a conductive material, such as copper, onto an electrically insulating substrate. It is a general term for a board immediately before electronic components are mounted. To densely mount numerous electronic components on a flat surface, the mounting locations of each component are determined, and the circuit patterns connecting the components are printed and secured onto the flat surface.
회로기판은 수직 방향으로 배치되는 복수의 절연층을 포함한다. 최근 박형화를 위해 회로기판 내 각 절연층을 PID(Photo-Image able Dielectric)로 구현하는 구조가 제안되고 있으나, PID 다층 구조의 경우 취약한 강성에 의해 휨 발생(warpage)의 문제점이 있다.Circuit boards comprise multiple insulating layers arranged vertically. Recently, a structure has been proposed that utilizes Photo-Imageable Dielectric (PID) layers within each insulating layer to achieve thinner circuit boards. However, PID multilayer structures suffer from warpage due to their low rigidity.
본 실시예는 복수 절연층이 배치되는 구조에서, 두께 감소와 함께 강성을 보강하여 휨 발생을 최소화할 수 있는 회로기판 및 반도체 패키지를 제공하는 것에 있다.The present embodiment provides a circuit board and semiconductor package capable of minimizing warpage by reinforcing rigidity while reducing thickness in a structure in which multiple insulating layers are arranged.
본 실시예에 따른 회로기판은 제1절연층; 상기 제1절연층 상에 배치되고, 상기 제1절연층과 같은 물질로 구비된 제2절연층; 상기 제1절연층과 상기 제2절연층 사이에 배치되고, 상기 제1절연층과 다른 물질로 구비된 제3절연층; 상기 제1절연층의 상면과 하면을 관통하는 제1비아 전극; 및 상기 제2절연층의 적어도 일부 영역을 관통하는 제2비아 전극을 포함하고, 상기 제1비아전극의 수직 방향의 길이는 상기 제2비아전극의 수직 방향의 길이보다 길다.A circuit board according to the present embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer and made of the same material as the first insulating layer; a third insulating layer disposed between the first insulating layer and the second insulating layer and made of a different material from the first insulating layer; a first via electrode penetrating the upper and lower surfaces of the first insulating layer; and a second via electrode penetrating at least a portion of the second insulating layer, wherein a vertical length of the first via electrode is longer than a vertical length of the second via electrode.
상기 제1절연층, 상기 제2절연층은 프리프레그(Prepreg, PPG)일 수 있다. The first insulating layer and the second insulating layer may be prepreg (PPG).
상기 제3절연층은 PID(Photo-Imageable Dielectric) 또는 ABF(Ajinomoto Build-up Film)일 수 있다. The third insulating layer may be a PID (Photo-Imageable Dielectric) or ABF (Ajinomoto Build-up Film).
상기 제3절연층은 복수로 구비되어 상기 제1절연층과 상기 제2절연층 사이에 배치될 수 있다. The third insulating layer may be provided in multiple numbers and placed between the first insulating layer and the second insulating layer.
상기 제3절연층은 2층 이하일 수 있다. The third insulating layer may have two or fewer layers.
상기 제2절연층의 표면에 배치되는 패턴 전극; 상기 제3절연층의 표면에 배치되는 패턴 전극; 및 상기 제2절연층의 패턴 전극과 상기 제3절연층의 패턴 전극을 수직 방향으로 연결하는 관통 전극을 포함할 수 있다. It may include a pattern electrode arranged on the surface of the second insulating layer; a pattern electrode arranged on the surface of the third insulating layer; and a through electrode vertically connecting the pattern electrode of the second insulating layer and the pattern electrode of the third insulating layer.
상기 제2절연층의 패턴 전극, 상기 제3절연층의 패턴 전극 및 상기 관통 전극은 인덕터를 구성할 수 있다. The pattern electrode of the second insulating layer, the pattern electrode of the third insulating layer, and the through electrode can form an inductor.
상기 제1절연층의 하부에 배치되고, 상기 제1절연층과 동일 물질로 구비된 제4절연층을 포함하고, 상기 제3절연층은 상기 제1절연층과 상기 제4절연층 사이에 배치될 수 있다. A fourth insulating layer is disposed below the first insulating layer and is made of the same material as the first insulating layer, and the third insulating layer can be disposed between the first insulating layer and the fourth insulating layer.
상기 제1절연층을 기준으로, 상부에 배치되는 제2절연층, 제3절연층 및 회로 패턴은, 하부에 배치되는 제4절연층, 제3절연층 및 회로 패턴과 대칭할 수 있다. Based on the first insulating layer, the second insulating layer, the third insulating layer, and the circuit pattern arranged on the upper side may be symmetrical with the fourth insulating layer, the third insulating layer, and the circuit pattern arranged on the lower side.
본 실시예에 따른 반도체 패키지는, 메인 기판; 및 상기 메인 기판 상에 결합되는 회로 기판을 포함하고, 상기 회로 기판은, 제1절연층; 상기 제1절연층 상에 배치되고, 상기 제1절연층과 같은 물질로 구비된 제2절연층; 상기 제1절연층과 상기 제2절연층 사이에 배치되고, 상기 제1절연층과 다른 물질로 구비된 제3절연층; 상기 제1절연층의 상면과 하면을 관통하는 제1비아 전극; 및 상기 제2절연층의 적어도 일부 영역을 관통하는 제2비아 전극을 포함하고, 상기 제1비아전극의 수직 방향의 길이는 상기 제2비아전극의 수직 방향의 길이보다 길다. A semiconductor package according to the present embodiment includes a main substrate; and a circuit board coupled to the main substrate, wherein the circuit board includes a first insulating layer; a second insulating layer disposed on the first insulating layer and made of the same material as the first insulating layer; a third insulating layer disposed between the first insulating layer and the second insulating layer and made of a different material from the first insulating layer; a first via electrode penetrating an upper surface and a lower surface of the first insulating layer; and a second via electrode penetrating at least a portion of the second insulating layer, wherein a vertical length of the first via electrode is longer than a vertical length of the second via electrode.
본 실시예를 통해 복수의 절연층이 수직 방향으로 적층되는 구조에서, 복수의 절연층 간 재질적 차이에 의해 회로 기판의 수직 방향 높이를 축소할 수 있으므로 소형화가 가능한 장점이 있다. In this embodiment, in a structure in which multiple insulating layers are stacked in a vertical direction, the vertical height of the circuit board can be reduced due to the material difference between the multiple insulating layers, so there is an advantage in that miniaturization is possible.
또한, 제3절연층 사이에 프리 프레그로 구성되는 제1절연층, 제2절연층, 제4절연층을 배치하여, 회로 기판 강성이 보강될 수 있는 장점이 있다. In addition, there is an advantage in that the rigidity of the circuit board can be reinforced by placing the first insulating layer, the second insulating layer, and the fourth insulating layer, which are composed of prepregs, between the third insulating layers.
또한, 제1절연층을 기준으로 상, 하부에 배치되는 절연층 및 회로 패턴을 상호 대칭하게 배치 및 형성함에 따라 상, 하부 응력 차이에 따른 회로 기판의 휨 현상(warpage)을 최소화할 수 있는 장점이 있다.In addition, there is an advantage in that the warpage of the circuit board due to the difference in upper and lower stress can be minimized by arranging and forming the insulating layers and circuit patterns arranged above and below the first insulating layer symmetrically.
도 1은 본 발명의 제1실시예에 따른 회로 기판의 단면도.Figure 1 is a cross-sectional view of a circuit board according to a first embodiment of the present invention.
도 2 내지 도 5는 본 발명의 제1실시예에 따른 회로 기판의 다양한 적용 예를 설명하기 위한 도면.Figures 2 to 5 are drawings for explaining various application examples of a circuit board according to the first embodiment of the present invention.
도 6은 본 발명의 실시예에 따른 반도체 패키지의 단면도.Fig. 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
도 7은 본 발명의 제2실시예에 따른 회로 기판의 단면도.Figure 7 is a cross-sectional view of a circuit board according to a second embodiment of the present invention.
도 8은 본 발명의 제3실시예에 따른 회로 기판의 단면도.Figure 8 is a cross-sectional view of a circuit board according to a third embodiment of the present invention.
도 9는 비교예에 따른 회로 기판의 배치 구조를 도시한 단면도.Fig. 9 is a cross-sectional view showing the layout structure of a circuit board according to a comparative example.
도 10은 비교예에 따른 회로 기판에서의 응력 분포를 측정한 도면.Fig. 10 is a drawing measuring stress distribution in a circuit board according to a comparative example.
도 11은 본 발명의 실시예에 따른 회로 기판에서의 응력 분포를 측정한 도면.Fig. 11 is a drawing measuring stress distribution in a circuit board according to an embodiment of the present invention.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다.Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.
다만, 본 발명의 기술 사상은 설명되는 일부 실시 예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있고, 본 발명의 기술 사상 범위 내에서라면, 실시 예들간 그 구성 요소들 중 하나 이상을 선택적으로 결합, 치환하여 사용할 수 있다.However, the technical idea of the present invention is not limited to some of the embodiments described, but can be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the components between the embodiments can be selectively combined or substituted for use.
또한, 본 발명의 실시예에서 사용되는 용어(기술 및 과학적 용어를 포함)는, 명백하게 특별히 정의되어 기술되지 않는 한, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 일반적으로 이해될 수 있는 의미로 해석될 수 있으며, 사전에 정의된 용어와 같이 일반적으로 사용되는 용어들은 관련 기술의 문맥상의 의미를 고려하여 그 의미를 해석할 수 있을 것이다.In addition, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted as having a meaning that can be generally understood by a person of ordinary skill in the technical field to which the present invention belongs, unless explicitly and specifically defined and described, and terms that are commonly used, such as terms defined in a dictionary, may be interpreted in consideration of the contextual meaning of the relevant technology.
또한, 본 발명의 실시예에서 사용된 용어는 실시예들을 설명하기 위한 것이며 본 발명을 제한하고자 하는 것은 아니다. 본 명세서에서, 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함할 수 있고, "A 및(와) B, C중 적어도 하나(또는 한 개 이상)"로 기재되는 경우 A,B,C 로 조합할 수 있는 모든 조합 중 하나이상을 포함할 수 있다.In addition, the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention. In this specification, the singular may also include the plural unless specifically stated in the phrase, and when it is described as "A and/or at least one (or more) of B, C," it may include one or more of all combinations that can be combined with A, B, and C.
또한, 본 발명의 실시 예의 구성 요소를 설명하는 데 있어서, 제1, 제2, A, B, (a), (b) 등의 용어를 사용할 수 있다.Additionally, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used.
이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등으로 한정되지 않는다.These terms are intended only to distinguish one component from another, and are not intended to limit the nature, order, or sequence of the component.
그리고, 어떤 구성 요소가 다른 구성요소에 '연결', '결합' 또는 '접속'된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결, 결합 또는 접속되는 경우뿐 만 아니라, 그 구성 요소와 그 다른 구성요소 사이에 있는 또 다른 구성 요소로 인해 '연결', '결합' 또는 '접속'되는 경우도 포함할 수 있다.And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, it may include not only cases where the component is directly connected, coupled or connected to the other component, but also cases where the component is 'connected', 'coupled' or 'connected' by another component between the component and the other component.
또한, 각 구성 요소의 " 상(위) 또는 하(아래)"에 형성 또는 배치되는 것으로 기재되는 경우, 상(위) 또는 하(아래)는 두개의 구성 요소들이 서로 직접 접촉되는 경우뿐 만 아니라 하나 이상의 또 다른 구성 요소가 두 개의 구성 요소들 사이에 형성 또는 배치되는 경우도 포함한다. 또한 "상(위) 또는 하(아래)"으로 표현되는 경우 하나의 구성 요소를 기준으로 위쪽 방향뿐만 아니라 아래쪽 방향의 의미도 포함할 수 있다.Additionally, when it is described as being formed or arranged "above or below" each component, "above" or "below" includes not only cases where the two components are in direct contact with each other, but also cases where one or more other components are formed or arranged between the two components. Also, when it is expressed as "above" or "below", it can include the meaning of the downward direction as well as the upward direction based on one component.
도 1은 본 발명의 제1실시예에 따른 회로 기판의 단면도이고, 도 2 내지 도 5는 본 발명의 제1실시예에 따른 회로 기판의 다양한 적용 예를 설명하기 위한 도면이며, 도 6은 본 발명의 실시예에 따른 반도체 패키지의 단면도이다. FIG. 1 is a cross-sectional view of a circuit board according to a first embodiment of the present invention, FIGS. 2 to 5 are drawings for explaining various application examples of the circuit board according to the first embodiment of the present invention, and FIG. 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
도 1을 참조하면, 본 발명의 실시예에 따른 회로 기판(10)은, 제1절연층(100), 제2절연층(110), 제3절연층, 제4절연층(120), 복수의 패드부, 복수의 비아 전극, 복수의 패턴 전극 및 복수의 관통 전극을 포함할 수 있다. Referring to FIG. 1, a circuit board (10) according to an embodiment of the present invention may include a first insulating layer (100), a second insulating layer (110), a third insulating layer, a fourth insulating layer (120), a plurality of pad portions, a plurality of via electrodes, a plurality of pattern electrodes, and a plurality of through electrodes.
여기서, 제1절연층(100), 제2절연층(110) 및 제4절연층(120)은 서로 같은 물질로 구비될 수 있다. 예를 들어, 제1절연층(100), 제2절연층(110) 및 제4절연층(120)은 광경화성 및/또는 열경화성 등의 임의의 절연체를 포함할 수 있다. 예시적으로, 제1절연층(100), 제2절연층(110) 및 제4절연층(120)은 수지 내 유리 섬유를 포함한 프리프레그(Prepreg, PPG)로 구비될 수 있다. 제1절연층(100), 제2절연층(110) 및 제4절연층(120)의 수지는 에폭시 수지, 비스말레이미드 트리아진 수지(BT 수지), 페놀 수지 중 어느 하나 이상을 포함할 수 있다. 제1절연층(100), 제2절연층(110) 및 제4절연층(120)의 수지가 절연층 수지로 이용되는 경우에는 유리 섬유나 아라미드 섬유 등으로 구비된 보강재를 포함할 수 있다.Here, the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may be formed of the same material. For example, the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may include any insulator such as a photocurable material and/or a thermocurable material. For example, the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may be formed of a prepreg (PPG) including glass fiber in a resin. The resin of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) may include at least one of an epoxy resin, a bismaleimide triazine resin (BT resin), and a phenol resin. When the resin of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120) is used as an insulating layer resin, it may include a reinforcing material made of glass fiber or aramid fiber.
제3절연층을 구성하는 재질의 물질은, 제1절연층(100), 제2절연층(110) 및 제4절연층(120) 중 어느 하나를 구성하는 재질의 물질과 상이할 수 있다. 예를 들어, 제3절연층의 재질은 광경화성 및/또는 열경화성 등의 임의의 절연체일 수 있다. 제3절연층의 재질은 PID(Photo-Imageable Dielectric) 또는 열경화성 절연체로 아지노모토 사에서 출시한 제품인 ABF(Ajinomoto Build-up Film) 등의 수지 내 무기물 및/또는 유기물 필러가 분산된 절연체가 이용될 수 있다. The material constituting the third insulating layer may be different from the material constituting any one of the first insulating layer (100), the second insulating layer (110), and the fourth insulating layer (120). For example, the material of the third insulating layer may be any insulator such as photocurable and/or thermosetting. The material of the third insulating layer may be an insulator in which inorganic and/or organic fillers are dispersed in a resin such as Ajinomoto Build-up Film (ABF), a product released by Ajinomoto Co., Ltd., as a PID (Photo-Imageable Dielectric) or thermosetting insulator.
이하에서는, 도 1에 도시된 바와 같이, 제1절연층(100) 상에 제2절연층(110)이 배치되고, 제1절연층(100)의 하부에 제4절연층(120)이 배치되며, 제1절연층(100)과 제2절연층(110) 사이, 제2절연층(110)의 상부, 제1절연층(100)과 제4절연층(120) 사이, 제4절연층(120)의 하부 중 어느 하나 이상에 제3절연층이 배치되는 것을 예로 들어, 본 실시예에 따른 회로 기판(10)에 대해 설명하기로 한다. 다르게 말하면, 회로 기판(10)은 제1절연층(100) 상에 상부 빌드업층(101)이 배치되고, 제1절연층(100)의 하부에 하부 빌드업층(102)이 배치되며, 상부 빌드업층(101)은 제2절연층(110) 및 제3절연층, 하부 빌드업층(102)은 제4절연층(120) 및 제3절연층으로 구성되는 것으로도 이해될 수 있다. Hereinafter, as illustrated in FIG. 1, a circuit board (10) according to the present embodiment will be described as an example in which a second insulating layer (110) is disposed on a first insulating layer (100), a fourth insulating layer (120) is disposed under the first insulating layer (100), and a third insulating layer is disposed on at least one of between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and under the lower portion of the fourth insulating layer (120). In other words, the circuit board (10) may be understood as having an upper build-up layer (101) disposed on a first insulating layer (100), a lower build-up layer (102) disposed under the first insulating layer (100), and the upper build-up layer (101) composed of a second insulating layer (110) and a third insulating layer, and the lower build-up layer (102) composed of a fourth insulating layer (120) and a third insulating layer.
제1절연층(100)은 상부 빌드업층(101)과 하부 빌드업층(102)의 사이에 배치될 수 있다. 제1절연층(100)은 전술한 바와 같이 프리프레그(Prepreg, PPG)일 수 있다. 제1절연층(100)은 코어(Core)층으로도 이름할 수 있다. 제1절연층(100)은 수직 방향으로 제1두께(H1)를 가질 수 있다. 일 예로, 제1절연층(100)의 두께는 40um 이상 100um이하일 수 있다. 제1절연층(100)의 두께가 40um 이하일 경우, 회로기판(10)의 중앙에 배치되는 제1절연층(100)의 강성이 떨어지므로, 회로기판(10)의 휨(warpage)에 취약할 수 있다. 제1절연층(100)의 두께가 100um 이상일 경우, 회로기판(10)의 두께가 과도하게 증가될 우려가 있다. The first insulating layer (100) may be disposed between the upper build-up layer (101) and the lower build-up layer (102). The first insulating layer (100) may be a prepreg (PPG) as described above. The first insulating layer (100) may also be called a core layer. The first insulating layer (100) may have a first thickness (H1) in the vertical direction. For example, the thickness of the first insulating layer (100) may be 40 um or more and 100 um or less. When the thickness of the first insulating layer (100) is 40 um or less, the rigidity of the first insulating layer (100) disposed at the center of the circuit board (10) is reduced, and thus the circuit board (10) may be vulnerable to warpage. If the thickness of the first insulating layer (100) is 100 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
본 실시예에 따른 회로 기판(10)은 제1절연층(100)을 기준으로, 상부 빌드업층(101)과 하부 빌드업층(102)이 상호 대칭하는 구조일 수 있다. 제1절연층(100)을 기준으로, 상부 빌드업층(101) 내 회로 패턴과 하부 빌드업층(102)의 회로 패턴 또한 대칭하게 배치될 수 있다. The circuit board (10) according to the present embodiment may have a structure in which the upper build-up layer (101) and the lower build-up layer (102) are symmetrical with respect to the first insulating layer (100). The circuit pattern in the upper build-up layer (101) and the circuit pattern in the lower build-up layer (102) may also be arranged symmetrically with respect to the first insulating layer (100).
제2절연층(110)은 제1절연층(100) 상에 배치될 수 있다. 제2절연층(110)과 제1절연층(100)은 수직 방향으로 이격되며, 사이에 적어도 1매 이상의 제3절연층이 배치될 수 있다. 제2절연층(110)은 프리프레그(Prepreg, PPG)일 수 있다. 제2절연층(110)은 수직 방향으로 제2두께(H2)를 가질 수 있다. 제2두께(H2)는 제1두께(H1) 보다 작을 수 있다. 일 예로, 제2두께(H2)는 15um 이상 30um 이하일 수 있다. 제2두께(H2)가 15um이하일 경우, 상, 하부에 배치되는 복수의 제3절연층의 지지력이 떨어져 회로기판(10)의 휨 현상이 발생될 수 있다. 제2두께(H2)가 30um 이상일 경우, 회로기판(10)의 두께가 과도하게 증가될 우려가 있다. The second insulating layer (110) may be disposed on the first insulating layer (100). The second insulating layer (110) and the first insulating layer (100) may be spaced apart from each other in the vertical direction, and at least one third insulating layer may be disposed therebetween. The second insulating layer (110) may be a prepreg (PPG). The second insulating layer (110) may have a second thickness (H2) in the vertical direction. The second thickness (H2) may be smaller than the first thickness (H1). For example, the second thickness (H2) may be 15 um or more and 30 um or less. When the second thickness (H2) is 15 um or less, the supporting force of the plurality of third insulating layers disposed on the upper and lower sides may decrease, causing warping of the circuit board (10). If the second thickness (H2) is 30 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
제4절연층(120)은 제1절연층(100)의 하부에 배치될 수 있다. 제4절연층(120)과 제1절연층(100)은 수직 방향으로 이격되며, 사이에 적어도 1매 이상의 제3절연층이 배치될 수 있다. 제4절연층(120)은 프리프레그(Prepreg, PPG)일 수 있다. 제4절연층(120)은 수직 방향으로 제2두께(H2)를 가질 수 있다. 제4절연층(120)의 두께는 제2절연층(110)의 두께와 동일할 수 있다. 제4절연층(120)의 두께(H2)는 15um 이상 30um 이하일 수 있다. 제4두께(H2)가 15um이하일 경우, 상, 하부에 배치되는 복수의 제3절연층의 지지력이 떨어져 회로기판(10)의 휨 현상이 발생될 수 있다. 제4두께(H2)가 30um 이상일 경우, 회로기판(10)의 두께가 과도하게 증가될 우려가 있다.The fourth insulating layer (120) may be arranged under the first insulating layer (100). The fourth insulating layer (120) and the first insulating layer (100) may be spaced apart from each other in the vertical direction, and at least one third insulating layer may be arranged therebetween. The fourth insulating layer (120) may be a prepreg (PPG). The fourth insulating layer (120) may have a second thickness (H2) in the vertical direction. The thickness of the fourth insulating layer (120) may be the same as the thickness of the second insulating layer (110). The thickness (H2) of the fourth insulating layer (120) may be 15 um or more and 30 um or less. When the fourth thickness (H2) is 15 um or less, the supporting force of the plurality of third insulating layers arranged above and below may decrease, causing warping of the circuit board (10). If the fourth thickness (H2) is 30 um or more, there is a risk that the thickness of the circuit board (10) may increase excessively.
제3절연층은 제1절연층(100)과 제2절연층(110) 사이, 제2절연층(110)의 상부, 제1절연층(100)과 제4절연층(120) 사이, 제4절연층(120)의 하부 중 적어도 하나 이상에 배치될 수 있다. 제3절연층은 수직 방향으로 복수매 적층될 수 있다. 일 예로, 제3절연층은 제1절연층(100)과 제2절연층(110) 사이, 제2절연층(110)의 상부, 제1절연층(100)과 제4절연층(120) 사이, 제4절연층(120)의 하부 중 적어도 하나에 2층 이하로 구비될 수 있다. 이에 따라, 상대적으로 강성이 약한 제4절연층(120)에 따른 크랙(Crack)을 최소화할 수 있다. The third insulating layer may be disposed on at least one of the following: between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower portion of the fourth insulating layer (120). The third insulating layer may be laminated in multiple layers in the vertical direction. For example, the third insulating layer may be provided in two or fewer layers on at least one of the following: between the first insulating layer (100) and the second insulating layer (110), on the upper portion of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower portion of the fourth insulating layer (120). Accordingly, cracks due to the fourth insulating layer (120) having relatively weak rigidity can be minimized.
제3절연층은, 제3-1절연층 내지 제3-8절연층(131, 132, 133, 134, 135, 136, 137, 138)을 포함할 수 있다. The third insulating layer may include the 3-1 insulating layer to the 3-8 insulating layer (131, 132, 133, 134, 135, 136, 137, 138).
상세히, 제3절연층은, 제1절연층(100) 상에 배치되는 제3-1절연층(131), 제3-1절연층(131)과 제2절연층(110) 사이에 배치되는 제3-2절연층(132), 제2절연층(110) 상에 배치되는 제3-3절연층(133), 제3-3절연층(133) 상에 배치되는 제3-4절연층(134), 제1절연층(100)의 하면에 배치되는 제3-5절연층(135), 제3-5절연층(135)과 제4절연층(120) 사이에 배치되는 제3-6절연층(136), 제4절연층(120)의 하면에 배치되는 제3-7절연층(137) 및 제3-7절연층(137)의 하면에 배치되는 제3-8절연층(138)을 포함할 수 있다. In detail, the third insulating layer includes a 3-1 insulating layer (131) disposed on the 1st insulating layer (100), a 3-2 insulating layer (132) disposed between the 3-1 insulating layer (131) and the 2nd insulating layer (110), a 3-3 insulating layer (133) disposed on the 2nd insulating layer (110), a 3-4 insulating layer (134) disposed on the 3-3 insulating layer (133), a 3-5 insulating layer (135) disposed on the lower surface of the 1st insulating layer (100), a 3-6 insulating layer (136) disposed between the 3-5 insulating layer (135) and the 4th insulating layer (120), a 3-7 insulating layer (137) disposed on the lower surface of the 4th insulating layer (120), and a 3-7 insulating layer (137) disposed on the lower surface of the 3-7 insulating layer (137). It may include a 3-8 insulating layer (138).
제3-1절연층 내지 제3-8절연층(131, 132, 133, 134, 135, 136, 137, 138)은 각각 제1절연층(100)과 제2절연층(110) 사이, 제2절연층(110)의 상부, 제1절연층(100)과 제4절연층(120) 사이, 제4절연층(120)의 하부에 수직 방향을 따라 배치될 수 있다. The 3-1 to 3-8 insulating layers (131, 132, 133, 134, 135, 136, 137, 138) may be arranged vertically between the first insulating layer (100) and the second insulating layer (110), on the upper side of the second insulating layer (110), between the first insulating layer (100) and the fourth insulating layer (120), and on the lower side of the fourth insulating layer (120), respectively.
제3절연층은 PID(Photo-Imageable Dielectric) 또는 ABF(Ajinomoto Build-up Film)일 수 있다. 제3절연층은 수직 방향으로 제3두께(H3)를 가질 수 있다. 제3두께(H3)는 제2두께(H2) 보다 작을 수 있다. 일 예로, 제3두께(H3)는 5um 이상 30um 이하일 수 있다. 제3두께(H3)가 5um 이하일 경우, 제3절연층을 관통하는 비아 전극 및 패드부의 형성에 어려움이 발생될 수 있다. 제3두께(H3)가 30um이상일 경우, 회로기판(10)의 두께를 과도하게 증가시킬 우려가 있다. The third insulating layer may be a Photo-Imageable Dielectric (PID) or an Ajinomoto Build-up Film (ABF). The third insulating layer may have a third thickness (H3) in the vertical direction. The third thickness (H3) may be smaller than the second thickness (H2). For example, the third thickness (H3) may be 5 μm or more and 30 μm or less. When the third thickness (H3) is 5 μm or less, it may be difficult to form a via electrode and a pad portion penetrating the third insulating layer. When the third thickness (H3) is 30 μm or more, there is a concern that the thickness of the circuit board (10) may be excessively increased.
복수의 패드부는, 제1절연층(100)의 상면에 배치되는 제1패드부(141), 제1절연층(100)의 하면에 배치되는 제2패드부(142), 제3-1절연층(131)의 상면에 배치되는 제3패드부(143), 제3-2절연층(132)의 상면에 배치되는 제4패드부(144), 제2절연층(110)의 상면에 배치되는 제5패드부(145), 제3-3절연층(133)의 상면에 배치되는 제6패드부(146), 제3-4절연층(134)의 상면에 배치되는 제7패드부(147), 제3-5절연층(135)의 하면에 배치되는 제8패드부(148), 제3-6절연층(136)의 하면에 배치되는 제9패드부(149), 제4절연층(120)의 하면에 배치되는 제10패드부(150), 제3-7절연층(137)의 하면에 배치되는 제11패드부(151) 및 제3-8절연층(138)의 하면에 배치되는 제12패드부(152)를 포함할 수 있다. The plurality of pad parts are a first pad part (141) disposed on the upper surface of the first insulating layer (100), a second pad part (142) disposed on the lower surface of the first insulating layer (100), a third pad part (143) disposed on the upper surface of the 3-1 insulating layer (131), a fourth pad part (144) disposed on the upper surface of the 3-2 insulating layer (132), a fifth pad part (145) disposed on the upper surface of the 2nd insulating layer (110), a sixth pad part (146) disposed on the upper surface of the 3-3 insulating layer (133), a seventh pad part (147) disposed on the upper surface of the 3-4 insulating layer (134), an eighth pad part (148) disposed on the lower surface of the 3-5 insulating layer (135), a ninth pad part (149) disposed on the lower surface of the 3-6 insulating layer (136), and a fourth pad part (120). It may include a 10th pad part (150) arranged on the lower surface, an 11th pad part (151) arranged on the lower surface of the 3rd-7th insulating layer (137), and a 12th pad part (152) arranged on the lower surface of the 3rd-8th insulating layer (138).
제1패드부(141)는 제3-1절연층(131)의 하면에 매립되는 것으로, 제3패드부(143)는 제3-2절연층(132)의 하면에 매립되는 것으로, 제4패드부(144)는 제2절연층(110)의 하면에 매립되는 것으로, 제5패드부(145)는 제3-3절연층(133)의 하면에 매립되는 것으로, 제6패드부(146)는 제3-4절연층(134)의 하면에 매립되는 것으로, 제2패드부(142)는 제3-5절연층(135)의 상면에 매립되는 것으로, 제8패드부는 제3-6절연층(136)의 상면에 매립되는 것으로, 제9패드부(149)는 제4절연층(120)의 상면에 매립되는 것으로, 제10패드부(150)는 제3-7절연층(137)의 상면에 매립되는 것으로, 제11패드부(151)는 제3-8절연층(138)의 상면에 매립되는 것으로도 이해될 수 있다. The first pad part (141) is embedded in the lower surface of the 3-1 insulating layer (131), the third pad part (143) is embedded in the lower surface of the 3-2 insulating layer (132), the fourth pad part (144) is embedded in the lower surface of the 2nd insulating layer (110), the fifth pad part (145) is embedded in the lower surface of the 3-3 insulating layer (133), the sixth pad part (146) is embedded in the lower surface of the 3-4 insulating layer (134), the second pad part (142) is embedded in the upper surface of the 3-5 insulating layer (135), the eighth pad part is embedded in the upper surface of the 3-6 insulating layer (136), the ninth pad part (149) is embedded in the upper surface of the 4th insulating layer (120), and the tenth pad part (150) is embedded in the upper surface of the It can also be understood that the 11th pad portion (151) is embedded in the upper surface of the 3-7th insulating layer (137), and that the 11th pad portion (151) is embedded in the upper surface of the 3-8th insulating layer (138).
제7패드부(147)와, 제12패드부(152)는 각각 회로 기판(10)의 상면 및 하면에 각각 배치될 수 있다. The seventh pad portion (147) and the twelfth pad portion (152) can be respectively placed on the upper and lower surfaces of the circuit board (10).
복수의 비아 전극은, 제1절연층(100)을 관통하도록 배치되며 제1패드부(141)와 제2패드부(142)를 전기적으로 연결하는 제1비아 전극(153)과, 제3-1절연층(131)을 관통하도록 배치되며 제1패드부(141)와 제3패드부(143)를 전기적으로 연결하는 제2비아 전극(154)과, 제3-2절연층(132)을 관통하도록 배치되며 제3패드부(143)와 제4패드부(144)를 전기적으로 연결하는 제3비아 전극(155)과, 제2절연층(110)을 관통하도록 배치되며 제4패드부(144)와 제5패드부(145)를 전기적으로 연결하는 제4비아 전극(156)과, 제3-3절연층(133)을 관통하도록 배치되며 제5패드부(145)와 제6패드부(146)를 전기적으로 연결하는 제5비아 전극(157)과, 제3-4절연층(134)을 관통하도록 배치되며, 제6패드부(146)와 제7패드부(147)를 전기적으로 연결하는 제6비아 전극(158)과, 제3-5절연층(135)을 관통하며 제2패드부(142)와 제8패드부(148)를 전기적으로 연결하는 제7비아 전극(159)과, 제3-6절연층(136)을 관통하며 제8패드부(148)와 제9패드부(149)를 전기적으로 연결하는 제8비아 전극(160)과, 제4절연층(120)을 관통하며 제9패드부(149)와 제10패드부(150)를 전기적으로 연결하는 제9비아 전극(161)과, 제3-7절연층(137)을 관통하며 제10패드부(150)와 제11패드부(151)를 전기적으로 연결하는 제10비아 전극(162)과, 제3-8절연층(138)을 관통하며 제11패드부(151)와 제12패드부(152)를 전기적으로 연결하는 제11비아 전극(163)을 포함할 수 있다. A plurality of via electrodes are arranged to penetrate the first insulating layer (100) and electrically connect the first pad portion (141) and the second pad portion (142), a first via electrode (153) arranged to penetrate the 3-1 insulating layer (131) and electrically connect the first pad portion (141) and the third pad portion (143), a third via electrode (155) arranged to penetrate the 3-2 insulating layer (132) and electrically connect the third pad portion (143) and the fourth pad portion (144), a fourth via electrode (156) arranged to penetrate the 2nd insulating layer (110) and electrically connect the fourth pad portion (144) and the fifth pad portion (145), and a third via electrode (156) arranged to penetrate the 3-3 insulating layer (133) and electrically connect the fifth pad portion (145) and the sixth pad portion (146). A fifth via electrode (157) electrically connecting, a sixth via electrode (158) positioned to penetrate the third-fourth insulating layer (134) and electrically connecting the sixth pad portion (146) and the seventh pad portion (147), a seventh via electrode (159) penetrating the third-fifth insulating layer (135) and electrically connecting the second pad portion (142) and the eighth pad portion (148), an eighth via electrode (160) penetrating the third-sixth insulating layer (136) and electrically connecting the eighth pad portion (148) and the ninth pad portion (149), a ninth via electrode (161) penetrating the fourth insulating layer (120) and electrically connecting the ninth pad portion (149) and the tenth pad portion (150), and a ninth via electrode (161) penetrating the third-seventh insulating layer (137) and electrically connecting the tenth pad portion (150) and It may include a 10th via electrode (162) that electrically connects the 11th pad portion (151) and an 11th via electrode (163) that penetrates the 3rd-8th insulating layer (138) and electrically connects the 11th pad portion (151) and the 12th pad portion (152).
제1비아 전극 내지 제11비아 전극(153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163)은 수직 방향을 따라 중첩되게 배치될 수 있다. 제1비아 전극 내지 제6비아 전극(153, 154, 155, 156, 157, 158)은 각각 하방으로 갈수록 수평 방향 폭이 작아지는 형상, 단면적이 작아지는 형상을 가질 수 있다. 제7비아 전극 내지 제11비아 전극(159, 160, 161, 162, 163)은 각각 하방으로 갈수록 수평 방향 폭이 증가하는 형상, 단면적이 커지는 형상을 가질 수 있다. The first to eleventh via electrodes (153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163) may be arranged to overlap each other in the vertical direction. The first to sixth via electrodes (153, 154, 155, 156, 157, 158) may have a shape in which the horizontal width decreases as they go downward, and a shape in which the cross-sectional area decreases, respectively. The seventh to eleventh via electrodes (159, 160, 161, 162, 163) may have a shape in which the horizontal width increases as they go downward, and a shape in which the cross-sectional area increases, respectively.
제1절연층(100)을 관통하는 제1비아 전극(153)의 수직 방향 길이는, 제2절연층(110)을 관통하는 제4비아 전극(156)의 수직 방향 길이 또는 제4절연층(120)을 관통하는 제9비아 전극(161)의 수직 방향 길이 보다 길 수 있다. 제1비아 전극(153)의 수직 방향 길이는, 제2 내지 제11비아 전극(154, 155, 156, 157, 158, 159, 160, 161, 162, 163) 중 어느 하나의 수직 방향 길이 보다 길게 형성될 수 있다. 이는, 제1절연층(100)과 다른 절연층 간 수직 방향 두께의 차 및 복수의 패드부 각각의 배치 구조에 따른 것으로, 상대적으로 강성이 높은 제1절연층(100)에서의 비아 전극의 길이를 길게 형성하고, 상대적으로 강성이 낮은 제2절연층 내지 제4절연층(110, 120, 130)의 영역에서 비아 전극의 길이를 짧게 형성하여 회로 기판 내 비아 전극을 컴팩트하게 결합시킬 수 있다. The vertical length of the first via electrode (153) penetrating the first insulating layer (100) may be longer than the vertical length of the fourth via electrode (156) penetrating the second insulating layer (110) or the vertical length of the ninth via electrode (161) penetrating the fourth insulating layer (120). The vertical length of the first via electrode (153) may be formed to be longer than the vertical length of any one of the second to eleventh via electrodes (154, 155, 156, 157, 158, 159, 160, 161, 162, 163). This is due to the difference in vertical thickness between the first insulating layer (100) and other insulating layers and the arrangement structure of each of the plurality of pad portions. By forming the length of the via electrode long in the first insulating layer (100) having relatively high rigidity and forming the length of the via electrode short in the region of the second to fourth insulating layers (110, 120, 130) having relatively low rigidity, the via electrode can be compactly combined within the circuit board.
회로 기판(10)은 복수의 패턴 전극 및 복수의 관통 전극을 포함할 수 있다. 여기서, 복수의 패턴 전극은 복수의 패드부와, 복수의 관통 전극은 복수의 비아 전극과의 기능적인 차이에 따른 것으로, 복수의 패턴 전극 또한 복수의 패드부로, 복수의 관통 전극 또한 복수의 비아 전극으로 각각 이름할 수 있음은 물론이다. The circuit board (10) may include a plurality of pattern electrodes and a plurality of through-hole electrodes. Here, the plurality of pattern electrodes may be referred to as a plurality of pad portions, and the plurality of through-hole electrodes may be referred to as a plurality of via electrodes, depending on the functional difference between the plurality of pattern electrodes and the plurality of through-hole electrodes. It goes without saying that the plurality of pattern electrodes may also be referred to as a plurality of pad portions, and the plurality of through-hole electrodes may also be referred to as a plurality of via electrodes.
복수의 패턴 전극은 제1절연층(100)의 상면에 배치되는 제1패턴 전극(171), 제1절연층(100)의 하면에 배치되는 제2패턴 전극(177), 제3-1절연층(131)의 상면에 배치되는 제3패턴 전극(172), 제3-2절연층(132)의 상면에 배치되는 제4패턴 전극(173), 제2절연층(110)의 상면에 배치되는 제5패턴 전극(174), 제3-3절연층(133)의 상면에 배치되는 제6패턴 전극(175), 제3-4절연층(134)의 상면에 배치되는 제7패턴 전극(176), 제3-5절연층(135)의 하면에 배치되는 제8패턴 전극(178), 제3-6절연층(136)의 하면에 배치되는 제9패턴 전극(179), 제4절연층(120)의 하면에 배치되는 제10패턴 전극(180), 제3-7절연층(137)의 하면에 배치되는 제11패턴 전극(181) 및 제3-8절연층(138)의 하면에 배치되는 제12패턴 전극(182)을 포함할 수 있다. The plurality of pattern electrodes include a first pattern electrode (171) disposed on the upper surface of the first insulating layer (100), a second pattern electrode (177) disposed on the lower surface of the first insulating layer (100), a third pattern electrode (172) disposed on the upper surface of the 3-1 insulating layer (131), a fourth pattern electrode (173) disposed on the upper surface of the 3-2 insulating layer (132), a fifth pattern electrode (174) disposed on the upper surface of the 2nd insulating layer (110), a sixth pattern electrode (175) disposed on the upper surface of the 3-3 insulating layer (133), a seventh pattern electrode (176) disposed on the upper surface of the 3-4 insulating layer (134), an eighth pattern electrode (178) disposed on the lower surface of the 3-5 insulating layer (135), and a ninth pattern electrode (179) disposed on the lower surface of the 3-6 insulating layer (136). It may include a 10th pattern electrode (180) arranged on the lower surface of the 4th insulating layer (120), an 11th pattern electrode (181) arranged on the lower surface of the 3rd-7th insulating layer (137), and a 12th pattern electrode (182) arranged on the lower surface of the 3rd-8th insulating layer (138).
제1패턴 전극 내지 제6패턴 전극(171, 177, 172, 173, 174, 175), 제8패턴 전극 내지 제11패턴 전극(178, 179, 180, 181) 중 어느 하나의 패턴 전극의 수평 방향 길이는, 제1패드부 내지 제12패드부(141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152) 중 어느 하나의 패드부의 수평 방향 길이 보다 길 수 있다. 제1패턴 전극 내지 제6패턴 전극(171, 177, 172, 173, 174, 175), 제8패턴 전극 내지 제11패턴 전극(178, 179, 180, 181) 중 어느 하나의 패턴 전극의 수평 방향 길이는, 제1패드부 내지 제12패드부(141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152) 중 어느 하나의 패드부의 수평 방향 길이의 2배 이상일 수 있다. The horizontal length of any one of the pattern electrodes among the first to sixth pattern electrodes (171, 177, 172, 173, 174, 175) and the eighth to eleventh pattern electrodes (178, 179, 180, 181) may be longer than the horizontal length of any one of the pad portions among the first to twelfth pad portions (141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152). The horizontal length of any one of the pattern electrodes among the first to sixth pattern electrodes (171, 177, 172, 173, 174, 175) and the eighth to eleventh pattern electrodes (178, 179, 180, 181) may be at least twice the horizontal length of any one of the pad portions among the first to twelfth pad portions (141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152).
회로 기판(10)의 상면에 배치되는 제7패턴 전극(176)과, 회로 기판(10)의 하면에 배치되는 제12패턴 전극(182)은 각각 수평 방향으로 2 이상 분할된 영역을 포함할 수 있다. 예를 들어, 제7패턴 전극(176)은 수평 방향으로 이격되는 제7-1패턴 전극(176a)과 제7-2패턴 전극(176b)을 포함하며, 제7-1패턴 전극(176a)과 제7-2패턴 전극(176b)은 각각 제6패턴 전극(175)과 전기적으로 연결될 수 있다. 제12패턴 전극(182)은 수평 방향으로 이격되는 제12-1패턴 전극(182a)과 제12-2패턴 전극(182b)을 포함하며, 제12-1패턴 전극(182a)과 제12-2패턴 전극(182b)은 각각 제11패턴 전극(181)과 전기적으로 연결될 수 있다. The seventh pattern electrode (176) disposed on the upper surface of the circuit board (10) and the twelfth pattern electrode (182) disposed on the lower surface of the circuit board (10) may each include two or more regions divided horizontally. For example, the seventh pattern electrode (176) includes a 7-1 pattern electrode (176a) and a 7-2 pattern electrode (176b) spaced apart horizontally, and the 7-1 pattern electrode (176a) and the 7-2 pattern electrode (176b) may each be electrically connected to the 6th pattern electrode (175). The 12th pattern electrode (182) includes a 12-1st pattern electrode (182a) and a 12-2nd pattern electrode (182b) that are spaced apart in the horizontal direction, and the 12-1st pattern electrode (182a) and the 12-2nd pattern electrode (182b) can each be electrically connected to the 11th pattern electrode (181).
제1패턴 전극(171)은 제1패드부(141)와 수평 방향으로 중첩될 수 있다. 제2패턴 전극(177)은 제2패드부(142)와 수평 방향으로 중첩될 수 있다. 제3패턴 전극(172)은 제3패드부(143)와 수평 방향으로 중첩될 수 있다. 제4패턴 전극(173)은 제4패드부(144)와 수평 방향으로 중첩될 수 있다. 제5패턴 전극(174)은 제5패드부(145)와 수평 방향으로 중첩될 수 있다. 제6패턴 전극(175)은 제6패드부(146)와 수평 방향으로 중첩될 수 있다. 제7패턴 전극(176)은 제7패드부(147)와 수평 방향으로 중첩될 수 있다. 제8패턴 전극(178)은 제8패드부(148)와 수평 방향으로 중첩될 수 있다. 제9패턴 전극(179)은 제9패드부(149)와 수평 방향으로 중첩될 수 있다. 제10패턴 전극(180)은 제10패드부(150)와 수평 방향으로 중첩될 수 있다. 제11패턴 전극(181)은 제11패드부(151)와 수평 방향으로 중첩될 수 있다. 제12패턴 전극(182)은 제12패드부(152)와 수평 방향으로 중첩될 수 있다. The first pattern electrode (171) may overlap with the first pad portion (141) in a horizontal direction. The second pattern electrode (177) may overlap with the second pad portion (142) in a horizontal direction. The third pattern electrode (172) may overlap with the third pad portion (143) in a horizontal direction. The fourth pattern electrode (173) may overlap with the fourth pad portion (144) in a horizontal direction. The fifth pattern electrode (174) may overlap with the fifth pad portion (145) in a horizontal direction. The sixth pattern electrode (175) may overlap with the sixth pad portion (146) in a horizontal direction. The seventh pattern electrode (176) may overlap with the seventh pad portion (147) in a horizontal direction. The eighth pattern electrode (178) may overlap with the eighth pad portion (148) in a horizontal direction. The ninth pattern electrode (179) may overlap horizontally with the ninth pad portion (149). The tenth pattern electrode (180) may overlap horizontally with the tenth pad portion (150). The eleventh pattern electrode (181) may overlap horizontally with the eleventh pad portion (151). The twelfth pattern electrode (182) may overlap horizontally with the twelfth pad portion (152).
복수의 관통 전극은, 제3-1절연층(131)을 관통하도록 배치되며 제1패턴 전극(171)과 제3패턴 전극(172)을 전기적으로 연결하는 제1관통 전극(183)과, 제3-2절연층(132)을 관통하도록 배치되며 제3패턴 전극(172)과 제4패턴 전극(173)을 전기적으로 연결하는 제2관통 전극(184)과, 제2절연층(110)을 관통하도록 배치되며 제4패턴 전극(173)과 제5패턴 전극(174)을 전기적으로 연결하는 제3관통 전극(185)과, 제3-3절연층(133)을 관통하도록 배치되며 제5패턴 전극(174)과 제6패턴 전극(175)을 전기적으로 연결하는 제4관통 전극(186)과, 제3-4절연층(134)을 관통하도록 배치되며 제6패턴 전극(175)과 제7패턴 전극(176)을 전기적으로 연결하는 제5관통 전극(187)과, 제3-5절연층(135)을 관통하며 제2패턴 전극(177)와 제8패턴 전극(178)을 전기적으로 연결하는 제6관통 전극(188)과, 제3-6절연층(136)을 관통하며 제8패턴 전극(178)와 제9패턴 전극(179)을 전기적으로 연결하는 제7관통 전극(189)과, 제4절연층(120)을 관통하며 제9패턴 전극(179)과 제10패턴 전극(180)을 전기적으로 연결하는 제8관통 전극(190)과, 제3-7절연층(137)을 관통하며 제10패턴 전극(180)과 제11패턴 전극(181)을 전기적으로 연결하는 제9관통 전극(191)과, 제3-8절연층(138)을 관통하며 제11패턴 전극(181)과 제12패턴 전극(182)을 전기적으로 연결하는 제10관통 전극(192)을 포함할 수 있다. A plurality of through electrodes are arranged to penetrate the 3-1 insulating layer (131) and electrically connect the first pattern electrode (171) and the third pattern electrode (172), a first through electrode (183) arranged to penetrate the 3-2 insulating layer (132) and electrically connect the third pattern electrode (172) and the fourth pattern electrode (173), a third through electrode (185) arranged to penetrate the 2nd insulating layer (110) and electrically connect the fourth pattern electrode (173) and the fifth pattern electrode (174), a fourth through electrode (186) arranged to penetrate the 3-3 insulating layer (133) and electrically connect the fifth pattern electrode (174) and the sixth pattern electrode (175), and a fourth through electrode (186) arranged to penetrate the 3-4 insulating layer (134) and electrically connect the sixth pattern A fifth through-hole electrode (187) electrically connecting the electrode (175) and the seventh pattern electrode (176), a sixth through-hole electrode (188) penetrating the third-fifth insulating layer (135) and electrically connecting the second pattern electrode (177) and the eighth pattern electrode (178), a seventh through-hole electrode (189) penetrating the third-sixth insulating layer (136) and electrically connecting the eighth pattern electrode (178) and the ninth pattern electrode (179), an eighth through-hole electrode (190) penetrating the fourth insulating layer (120) and electrically connecting the ninth pattern electrode (179) and the tenth pattern electrode (180), and a ninth through-hole electrode (191) penetrating the third-seventh insulating layer (137) and electrically connecting the tenth pattern electrode (180) and the eleventh pattern electrode (181), It may include a 10th penetration electrode (192) that penetrates the 3rd-8th insulating layer (138) and electrically connects the 11th pattern electrode (181) and the 12th pattern electrode (182).
제1 내지 제10관통 전극(183. 184. 185. 186. 187. 188. 189. 190. 191. 192)은 복수로 구비되어 수평 방향으로 이격될 수 있다. The first to tenth penetration electrodes (183, 184, 185, 186, 187, 188, 189, 190, 191, 192) may be provided in multiple numbers and spaced apart in the horizontal direction.
제1관통 전극(183)은 제2비아 전극(154)과 수평 방향으로 중첩될 수 있다. 제2관통 전극(184)은 제3비아 전극(155)과 수평 방향으로 중첩될 수 있다. 제3관통 전극(185)은 제4비아 전극(156)과 수평 방향으로 중첩될 수 있다. 제4관통 전극(186)은 제5비아 전극(157)과 수평 방향으로 중첩될 수 있다. 제5관통 전극(187)은 제6비아 전극(158)과 수평 방향으로 중첩될 수 있다. 제6관통 전극(188)은 제7비아 전극(159)과 수평 방향으로 중첩될 수 있다. 제7관통 전극(189)은 제8비아 전극(160)과 수평 방향으로 중첩될 수 있다. 제8관통 전극(190)은 제9비아 전극(161)과 수평 방향으로 중첩될 수 있다. 제9관통 전극(191)은 제10비아 전극(162)과 수평 방향으로 중첩될 수 있다. 제10관통 전극(192)은 제11비아 전극(163)과 수평 방향으로 중첩될 수 있다. The first through-hole electrode (183) may overlap horizontally with the second via electrode (154). The second through-hole electrode (184) may overlap horizontally with the third via electrode (155). The third through-hole electrode (185) may overlap horizontally with the fourth via electrode (156). The fourth through-hole electrode (186) may overlap horizontally with the fifth via electrode (157). The fifth through-hole electrode (187) may overlap horizontally with the sixth via electrode (158). The sixth through-hole electrode (188) may overlap horizontally with the seventh via electrode (159). The seventh through-hole electrode (189) may overlap horizontally with the eighth via electrode (160). The eighth through-hole electrode (190) may overlap horizontally with the ninth via electrode (161). The ninth through electrode (191) may overlap horizontally with the tenth via electrode (162). The tenth through electrode (192) may overlap horizontally with the eleventh via electrode (163).
제1 내지 제5관통 전극(183, 184, 185, 186, 187)은 각각 하방으로 갈수록 수평 방향 폭, 단면적이 작아지는 형상을 가질 수 있다. 제6 내지 제10관통 전극(188, 189, 190, 191, 192)은 각각 하방으로 갈수록 수평 방향 폭, 단면적이 증가하는 형상을 가질 수 있다. 제1 내지 제10관통 전극(183. 184. 185. 186. 187. 188. 189. 190. 191. 192) 각각의 수직 방향 길이는, 제1비아 전극(153)의 수직 방향 길이 보다 짧을 수 있다. The first to fifth through-hole electrodes (183, 184, 185, 186, 187) may have a shape in which the horizontal width and cross-sectional area decrease as they go downward, respectively. The sixth to tenth through-hole electrodes (188, 189, 190, 191, 192) may have a shape in which the horizontal width and cross-sectional area increase as they go downward, respectively. The vertical length of each of the first to tenth through-hole electrodes (183, 184, 185, 186, 187, 188, 189, 190, 191, 192) may be shorter than the vertical length of the first via electrode (153).
제1패턴 전극(171), 제3 내지 제7패턴 전극(172, 173, 174, 175, 176), 제1 내지 제5관통 전극(183, 184, 185, 186, 187)은 회로 기판(10) 내에서 절연층과 함께 인덕터를 구성할 수 있다. 제2패턴 전극(177), 제8 내지 제12패턴 전극(178, 179, 180, 181, 182), 제6 내지 제10관통 전극(188, 189, 190, 191, 192)은 회로 기판(10) 내에서 절연층과 함께 인덕터를 구성할 수 있다. 이에 따라, 회로 기판(10)은 제1절연층(100)을 기준으로 상, 하부에 각각 복수의 인덕터가 배치되는 구조가 구현될 수 있다. The first pattern electrode (171), the third to seventh pattern electrodes (172, 173, 174, 175, 176), and the first to fifth through-hole electrodes (183, 184, 185, 186, 187) can form an inductor together with an insulating layer within the circuit board (10). The second pattern electrode (177), the eighth to twelfth pattern electrodes (178, 179, 180, 181, 182), and the sixth to tenth through-hole electrodes (188, 189, 190, 191, 192) can form an inductor together with an insulating layer within the circuit board (10). Accordingly, the circuit board (10) can have a structure in which a plurality of inductors are arranged above and below the first insulating layer (100).
상기와 같은 구조에 따르면, 복수의 절연층이 수직 방향으로 적층되는 구조에서, 복수의 절연층 간 재질적 차이에 의해 회로 기판의 수직 방향 높이를 축소할 수 있으므로 소형화가 가능한 장점이 있다. According to the structure as described above, in a structure in which multiple insulating layers are stacked in a vertical direction, the vertical height of the circuit board can be reduced due to the material difference between the multiple insulating layers, so there is an advantage in that miniaturization is possible.
또한, 제3절연층 사이에 프리 프레그로 구성되는 제1절연층, 제2절연층, 제4절연층을 배치하여, 회로 기판 강성이 보강될 수 있는 장점이 있다. In addition, there is an advantage in that the rigidity of the circuit board can be reinforced by placing the first insulating layer, the second insulating layer, and the fourth insulating layer, which are composed of prepregs, between the third insulating layers.
또한, 제1절연층을 기준으로 상, 하부에 배치되는 절연층 및 회로 패턴을 상호 대칭하게 배치 및 형성함에 따라 상, 하부 응력 차이에 따른 회로 기판의 휨 현상(warpage)을 최소화할 수 있는 장점이 있다. In addition, there is an advantage in that the warpage of the circuit board due to the difference in upper and lower stress can be minimized by arranging and forming the insulating layers and circuit patterns arranged above and below the first insulating layer symmetrically.
도 2 내지 도 5는, 본 발명의 제1실시예에 따른 회로 기판(10)의 다양한 적용 예를 도시한 도면이다. Figures 2 to 5 are drawings showing various application examples of a circuit board (10) according to the first embodiment of the present invention.
먼저 도 2를 참조하면, 회로 기판(10)의 상, 하면에는 각각 제1보호층(198)과, 제2보호층(199)이 배치될 수 있다. 이 경우, 제1보호층(198)과 제2보호층(199)은 회로 기판(10)의 표면에 반도체 소자가 솔더 등의 물질로 배치되는 경우, 솔더와의 낮은 젖음성에 의하여 솔더 간 단락을 방지하는 기능을 수행할 수 있다. 제1보호층(198)과 제2보호층(199)은 각각 광 경화성 절연 물질이 이용될 수 있다. 일 예로, 제1보호층(198)과 제2보호층(199)은 솔더 레지스트가 이용될 수 있다. 제1보호층(198)은 제7패턴 전극(176) 및 제7패드부(147)를 상방으로 노출시키기 위한 관통홀(198a)을 포함할 수 있다. 제2보호층(199)은 제12패턴 전극(182) 및 제12패드부(152)를 하방으로 노출시키기 위한 관통홀(199a)을 포함할 수 있다. First, referring to FIG. 2, a first protective layer (198) and a second protective layer (199) may be disposed on the upper and lower surfaces of the circuit board (10), respectively. In this case, the first protective layer (198) and the second protective layer (199) may perform a function of preventing a short circuit between solders due to low wettability with the solder when a semiconductor element is disposed on the surface of the circuit board (10) using a material such as solder. The first protective layer (198) and the second protective layer (199) may each use a photocurable insulating material. For example, the first protective layer (198) and the second protective layer (199) may use a solder resist. The first protective layer (198) may include a through hole (198a) for exposing the seventh pattern electrode (176) and the seventh pad portion (147) upward. The second protective layer (199) may include a through hole (199a) for exposing the 12th pattern electrode (182) and the 12th pad portion (152) downward.
도 3 및 도 4를 참조하면, 본 변형예에서는 제1실시예에 따른 회로 기판(10)에서 제1절연층(100)을 기준으로 2 이상의 영역이 상호 분할될 수 있다. 이 경우, 회로 기판(10) 내에서 제1절연층(100)이 생략됨에 따라, 복수의 분할 영역은, 제2절연층(110)을 중심으로, 상, 하면에 제3-1절연층 내지 제3-4절연층(131, 132, 133, 134)이 각각 배치되는 제1회로 기판(20)과, 제4절연층(130)을 중심으로, 상, 하면에 제3-5절연층 내지 제3-8절연층(135, 136, 137, 138)이 각각 배치되는 제2회로 기판(30)을 포함할 수 있다. 즉, 단일의 회로 기판(10)의 제조에 따라 인덕터의 기능 수행이 가능한 복수의 회로 기판이 제조될 수 있다. Referring to FIGS. 3 and 4, in the present modified example, two or more regions can be mutually divided based on the first insulating layer (100) in the circuit board (10) according to the first embodiment. In this case, since the first insulating layer (100) is omitted in the circuit board (10), the plurality of divided regions can include a first circuit board (20) in which the 3-1st insulating layer to the 3-4th insulating layer (131, 132, 133, 134) are respectively arranged on the upper and lower surfaces with the second insulating layer (110) as the center, and a second circuit board (30) in which the 3-5th insulating layer to the 3-8th insulating layer (135, 136, 137, 138) are respectively arranged on the upper and lower surfaces with the fourth insulating layer (130) as the center. That is, multiple circuit boards capable of performing the function of an inductor can be manufactured by manufacturing a single circuit board (10).
이 경우, 제1회로 기판(20)과 제2회로 기판(30)의 상, 하면에는 각각 제1보호층(198)과 제2보호층(199)이 배치됨에 따라, 제1회로 기판(20)을 기준으로 제1보호층(198)의 관통홀(198a)을 통하여 제7패턴 전극(176) 및 제7패드부(147)가 상방으로 노출되고, 제2보호층(199)의 관통홀(199a)을 통하여 제1패턴 전극(171) 및 제1패드부(141)가 하방으로 노출될 수 있다. In this case, as the first protective layer (198) and the second protective layer (199) are respectively arranged on the upper and lower surfaces of the first circuit board (20) and the second circuit board (30), the seventh pattern electrode (176) and the seventh pad portion (147) can be exposed upward through the through hole (198a) of the first protective layer (198) with respect to the first circuit board (20), and the first pattern electrode (171) and the first pad portion (141) can be exposed downward through the through hole (199a) of the second protective layer (199).
한편, 제1절연층(100)의 생략을 통해 복수의 회로 기판(20, 30)의 제조 시, 제1실시예에 따른 회로 기판(10)의 설명에서 제1절연층(100) 내 제1비아 전극(153)은 생략될 수 있다. Meanwhile, when manufacturing a plurality of circuit boards (20, 30) by omitting the first insulating layer (100), the first via electrode (153) in the first insulating layer (100) may be omitted in the description of the circuit board (10) according to the first embodiment.
도 1 및 도 5를 참조하면, 본 변형예에서는, 제1실시예에 따른 회로 기판(10)에서, 상, 하부 영역이 연마(griding)될 수 있다. 이에 따라, 회로 기판의 상, 하면에는 각각 제3-3절연층(133)과, 제3-4절연층(134)이 연마된 영역인 제1표면(133a)과, 제3-7절연층(137)과 제3-8절연층(138)이 연마된 영역인 제2표면(137a)이 각각 형성될 수 있다. 제1표면(133a)은 제2절연층(110)의 상면에 배치될 수 있다. 제2표면(137a)은 제4절연층(120)의 하면에 배치될 수 있다. 이에 따라, 제1표면(133a)과 제2표면(137a)의 각각에 제1보호층(198)과 제2보호층(199)이 배치되어, 제5패드부(145) 및 제5패턴 전극(174)과, 제10패드부(150) 및 제10패턴 전극(180)이 상, 하방으로 노출될 수 있다. Referring to FIGS. 1 and 5, in the present modified example, the upper and lower regions of the circuit board (10) according to the first embodiment may be ground. Accordingly, a first surface (133a), which is a region where the 3-3rd insulating layer (133) and the 3-4th insulating layer (134) are ground, and a second surface (137a), which is a region where the 3-7th insulating layer (137) and the 3-8th insulating layer (138) are ground, may be formed on the upper and lower surfaces of the circuit board, respectively. The first surface (133a) may be disposed on the upper surface of the second insulating layer (110). The second surface (137a) may be disposed on the lower surface of the 4th insulating layer (120). Accordingly, the first protective layer (198) and the second protective layer (199) are arranged on the first surface (133a) and the second surface (137a), respectively, so that the fifth pad portion (145) and the fifth pattern electrode (174), and the tenth pad portion (150) and the tenth pattern electrode (180) can be exposed upward and downward.
도 6은 본 발명의 실시예에 따른 반도체 패키지의 단면도이다. Figure 6 is a cross-sectional view of a semiconductor package according to an embodiment of the present invention.
도 6을 참조하면, 전술한 바와 같이, 본 발명의 실시예에 따른 회로 기판은 인덕터로서 기능하는 인덕터 기판일 수 있다. 이에 따라, 종래 인덕터 소자를 별도로 제작하여 기판 상에 실장하는 것과 대비할 때, 소형화가 가능하고, 이종 기판 간 결합 과정에 따라 생산 공정도 보다 단순화될 수 있는 장점이 있다. Referring to FIG. 6, as described above, the circuit board according to an embodiment of the present invention may be an inductor board that functions as an inductor. Accordingly, compared to conventional methods of separately manufacturing and mounting inductor elements on a board, this circuit board can be miniaturized, and the production process can be simplified by joining different types of boards.
본 발명의 실시예에 따른 반도체 패키지는, 메인 기판(200) 및 메인 기판(200) 상에 결합되는 회로 기판(10)을 포함할 수 있다. A semiconductor package according to an embodiment of the present invention may include a main substrate (200) and a circuit substrate (10) bonded to the main substrate (200).
메인 기판(200)은 수직 방향으로 적층되는 제5절연층(210), 제6절연층(220) 및 제7절연층(230)을 포함할 수 있다. 제5 내지 제7절연층(210, 220, 230)은 프리 프레그(PPG)일 수 있다. The main substrate (200) may include a fifth insulating layer (210), a sixth insulating layer (220), and a seventh insulating layer (230) that are stacked in a vertical direction. The fifth to seventh insulating layers (210, 220, 230) may be prepreg (PPG).
메인 기판(200)은, 제5절연층(210)의 상면에 배치되는 제13패드부(241), 제6절연층(220)의 상면에 배치되는 제14패드부(242), 제7절연층(230)의 상면에 배치되는 제15패드부(243) 및 제7절연층(230)의 하면에 배치되는 제16패드부(244)를 포함할 수 있다. The main substrate (200) may include a 13th pad portion (241) disposed on the upper surface of the 5th insulating layer (210), a 14th pad portion (242) disposed on the upper surface of the 6th insulating layer (220), a 15th pad portion (243) disposed on the upper surface of the 7th insulating layer (230), and a 16th pad portion (244) disposed on the lower surface of the 7th insulating layer (230).
메인 기판(200)은 제5절연층(210)을 관통하며 제13패드부(241)와 제14패드부(242)를 전기적으로 연결하는 제12비아 전극(251), 제6절연층(220) 제14패드부(242)와 제15패드부(243)를 전기적으로 연결하는 제13비아 전극(252) 및 제7절연층(230)을 관통하며 제15패드부(243)와 제16패드부(244)를 전기적으로 연결하는 제14비아 전극(253)을 포함할 수 있다. The main board (200) may include a 12th via electrode (251) that penetrates the 5th insulating layer (210) and electrically connects the 13th pad portion (241) and the 14th pad portion (242), a 13th via electrode (252) that electrically connects the 14th pad portion (242) and the 15th pad portion (243) of the 6th insulating layer (220), and a 14th via electrode (253) that penetrates the 7th insulating layer (230) and electrically connects the 15th pad portion (243) and the 16th pad portion (244).
제14비아 전극(253)의 수직 방향 길이는, 제12비아 전극(251) 또는 제13비아 전극(252)의 수직 방향 길이 보다 길 수 있다. The vertical length of the 14th via electrode (253) may be longer than the vertical length of the 12th via electrode (251) or the 13th via electrode (252).
메인 기판(200)은 제5절연층(210)의 상면에 배치되는 제13패턴 전극(261), 제6절연층(220)의 상면에 배치되는 제14패턴 전극(262), 제7절연층(230)의 상면에 배치되는 제15패턴 전극(263) 및 제7절연층(230)의 하면에 배치되는 제16패턴 전극(264)를 포함할 수 있다.The main substrate (200) may include a 13th pattern electrode (261) disposed on the upper surface of the 5th insulating layer (210), a 14th pattern electrode (262) disposed on the upper surface of the 6th insulating layer (220), a 15th pattern electrode (263) disposed on the upper surface of the 7th insulating layer (230), and a 16th pattern electrode (264) disposed on the lower surface of the 7th insulating layer (230).
메인 기판(200)은 제13패턴 전극(261)과 제14패턴 전극(262)을 연결하는 제11관통 전극(271), 제14패턴 전극(262)과 제15패턴 전극(263)을 연결하는 제12관통 전극(272) 및 제15패턴 전극(263)과 제16패턴 전극(264)을 연결하는 제13관통 전극(273)을 포함할 수 있다. The main substrate (200) may include an 11th through electrode (271) connecting the 13th pattern electrode (261) and the 14th pattern electrode (262), a 12th through electrode (272) connecting the 14th pattern electrode (262) and the 15th pattern electrode (263), and a 13th through electrode (273) connecting the 15th pattern electrode (263) and the 16th pattern electrode (264).
제13관통 전극(273)의 수직 방향 길이는, 제11관통 전극(271) 또는 제12관통 전극(272)의 수직 방향 길이 보다 길 수 있다. The vertical length of the 13th penetration electrode (273) may be longer than the vertical length of the 11th penetration electrode (271) or the 12th penetration electrode (272).
상기와 같은 구조에 따르면, 회로 기판(10)의 하면에 배치되는 제12패턴 전극(182)은 각각 제13패턴 전극(271)과 솔더 볼(290)을 통해 결합될 수 있다. 이에 따라, 메인 기판(200) 상에서 회로 기판(10)은 인덕터로서 기능할 수 있다. 즉, 상기 회로 기판(10) 자체는 인덕터일 수 있다. According to the above structure, the 12th pattern electrode (182) arranged on the lower surface of the circuit board (10) can be connected to the 13th pattern electrode (271) through solder balls (290), respectively. Accordingly, the circuit board (10) can function as an inductor on the main board (200). That is, the circuit board (10) itself can be an inductor.
한편, 메인 기판(200)의 상면에는 타 영역보다 하방으로 오목한 형상의 리세스(미도시)가 형성될 수 있다. 리세스는 제5절연층(210) 또는 제5절연층(210)과 제6절연층(220)을 관통하는 형상일 수 있다. 이 경우, 회로 기판(10)은 리세스 내 배치되어, 리세스에 바닥면에 형성되는 회로 패턴과 전기적으로 연결될 수 있다. 이에 따라, 반도체 패키지의 상하 방향 높이가 축소될 수 있다. Meanwhile, a recess (not shown) having a concave shape downward compared to other areas may be formed on the upper surface of the main substrate (200). The recess may have a shape penetrating the fifth insulating layer (210) or the fifth insulating layer (210) and the sixth insulating layer (220). In this case, the circuit board (10) may be placed within the recess and electrically connected to a circuit pattern formed on the bottom surface of the recess. Accordingly, the vertical height of the semiconductor package may be reduced.
도 7은 본 발명의 제2실시예에 따른 회로 기판의 단면도이다. Figure 7 is a cross-sectional view of a circuit board according to a second embodiment of the present invention.
본 실시예에서는 다른 부분에 있어서는 제1실시예와 동일하고, 다만 제2절연층 및 제4절연층이 생략되는 점에 따른 차이가 있다. 따라서, 이하에서는 본 실시예의 특징적인 부분에 대해서만 설명을 하고, 나머지 부분에 있어서는 제1실시예에 대한 설명을 원용하기로 한다. This embodiment is identical to the first embodiment in other respects, with the exception that the second and fourth insulating layers are omitted. Therefore, only the characteristic aspects of this embodiment will be described below, and the description of the first embodiment will be used for the remaining portions.
도 1 및 도 7을 참조하면, 본 실시예에 따른 회로 기판(40)은, 제1실시예 따른 회로 기판(10)에서 제2절연층(110) 및 제4절연층(140)이 생략될 수 있다. 이 경우, 제1실시예에 따른 회로 기판(10)에서 제2절연층(110)과 제4절연층(140)의 배치 영역에는 각각 제3절연층과 동일한 재질의 제3절연층이 배치될 수 있다. 이 경우, 제3-2절연층(132)과 제3-3절연층(133) 사이에 제3-9절연층(310)이 배치되고, 제3-6절연층(136)과 제3-7절연층(137) 사이에 제3-10절연층(320)이 배치되는 것으로 이해될 수 있다. 한편, 본 실시예에서 제3-9절연층(310)과 제3-10절연층(320) 내 회로 패턴에 대해서는 제1실시예의 제2절연층(110)과 제4절연층(120) 내 회로 패턴에 대한 설명을 원용하기로 한다. Referring to FIGS. 1 and 7, in the circuit board (40) according to the present embodiment, the second insulating layer (110) and the fourth insulating layer (140) may be omitted from the circuit board (10) according to the first embodiment. In this case, a third insulating layer made of the same material as the third insulating layer may be disposed in the areas where the second insulating layer (110) and the fourth insulating layer (140) are disposed in the circuit board (10) according to the first embodiment. In this case, it can be understood that the 3-9 insulating layer (310) is disposed between the 3-2 insulating layer (132) and the 3-3 insulating layer (133), and the 3-10 insulating layer (320) is disposed between the 3-6 insulating layer (136) and the 3-7 insulating layer (137). Meanwhile, in this embodiment, the circuit patterns in the 3rd-9th insulating layer (310) and the 3rd-10th insulating layer (320) are described based on the description of the circuit patterns in the 2nd insulating layer (110) and the 4th insulating layer (120) of the 1st embodiment.
이에 따라, 상대적으로 두께가 두꺼운 제2절연층 및 제4절연층이 상대적으로 두께가 얇은 PID(Photo-Imageable Dielectric) 또는 ABF(Ajinomoto Build-up Film) 재질의 제3절연층으로 대체됨에 따라 회로 기판(40)의 두께가 보다 얇아질 수 있으나, 제1실시예와 대비하여 강성은 보다 약해질 수 있다. Accordingly, the thickness of the circuit board (40) can be made thinner as the relatively thick second insulating layer and fourth insulating layer are replaced with a relatively thin third insulating layer made of PID (Photo-Imageable Dielectric) or ABF (Ajinomoto Build-up Film) material, but the rigidity can be weakened compared to the first embodiment.
도 8은 본 발명의 제3실시예에 따른 회로 기판의 단면도이다. Figure 8 is a cross-sectional view of a circuit board according to a third embodiment of the present invention.
본 실시예에서는 다른 부분에 있어서는 제1실시예와 동일하고, 다만, 제1실시예에 따른 회로 기판에서 제2패턴 전극, 제8 내지 제12패턴 전극, 제6 내지 제10관통 전극이 생략되는 점에 따른 차이가 있다. In this embodiment, other parts are the same as in the first embodiment, but there is a difference in that the second pattern electrode, the eighth to twelfth pattern electrodes, and the sixth to tenth through electrodes are omitted from the circuit board according to the first embodiment.
도 1 및 도 8을 참조하면, 본 실시예에 따른 회로 기판(50)은 제1실시예에 따른 회로 기판에서 제2패턴 전극(177), 제8 내지 제12패턴 전극(178, 179, 180, 181, 182), 제6 내지 제10관통 전극(188, 189, 190, 191, 192)이 생략될 수 있다. 이 경우, 마찬가지로, 제2절연층(110) 및 제4절연층(120)을 통해 회로 기판(50)의 강성은 보강될 수 있으나, 제1절연층(100)을 기준으로 상, 하부 회로 패턴의 비대칭에 따라 제1실시예 대비 휨 현상 효과가 저감될 수 있고, 도 4에서와 같이 복수의 인덕터 기판의 제조가 불가능함에 따라 수율이 떨어질 수 있다. Referring to FIGS. 1 and 8, the circuit board (50) according to the present embodiment may omit the second pattern electrode (177), the eighth to twelfth pattern electrodes (178, 179, 180, 181, 182), and the sixth to tenth through electrodes (188, 189, 190, 191, 192) from the circuit board according to the first embodiment. In this case, similarly, the rigidity of the circuit board (50) may be reinforced through the second insulating layer (110) and the fourth insulating layer (120), but the bending effect may be reduced compared to the first embodiment due to the asymmetry of the upper and lower circuit patterns with respect to the first insulating layer (100), and the yield may be reduced because the manufacturing of a plurality of inductor boards is impossible as in FIG. 4.
도 9는 비교예에 따른 회로 기판의 배치 구조를 도시한 단면도이고, 도 10은 비교예에 따른 회로 기판에서의 응력 분포를 측정한 도면이며, 도 11은 본 발명의 실시예에 따른 회로 기판에서의 응력 분포를 측정한 도면이다. FIG. 9 is a cross-sectional view showing the layout structure of a circuit board according to a comparative example, FIG. 10 is a drawing measuring stress distribution in a circuit board according to a comparative example, and FIG. 11 is a drawing measuring stress distribution in a circuit board according to an embodiment of the present invention.
도 9를 참조하면, 비교예에 따른 회로 기판은, 본 발명의 실시예에 따른 회로 기판(10)의 제1절연층(100)의 대응 구성인 제1절연층(1100)과, 본 발명의 ㅅ실시예에 따른 회로 기판(10)의 제3절연층의 대응 구성인 제3절연층(1210, 1220, 1230, 1240, 1250)을 포함한다. 제3절연층(1210, 1220, 1230, 1240, 1250)은 5매로 구현되어, 제1절연층(1100)의 상면에 수직 방향으로 배치되고, 각 층에는 패드부 및 비아 전극이 배치된다. 즉, 비교예에 따른 회로 기판은 제1절연층(1100)을 기준으로 제3절연층이 상, 하부 대칭 구조가 아닌, 일면에만 배치된 경우이다. Referring to FIG. 9, a circuit board according to a comparative example includes a first insulating layer (1100) which is a corresponding configuration of a first insulating layer (100) of a circuit board (10) according to an embodiment of the present invention, and a third insulating layer (1210, 1220, 1230, 1240, 1250) which is a corresponding configuration of a third insulating layer of a circuit board (10) according to an embodiment of the present invention. The third insulating layers (1210, 1220, 1230, 1240, 1250) are implemented as five sheets and are arranged in a vertical direction on the upper surface of the first insulating layer (1100), and a pad portion and a via electrode are arranged on each layer. That is, the circuit board according to the comparative example is a case where the third insulating layer is not arranged in an upper and lower symmetrical structure based on the first insulating layer (1100), but is arranged only on one side.
도 10을 참조하면, 비교예에 따른 회로 기판은, 제1절연층(1100)과 제3절연층(1210, 1220, 1230, 1240, 1250)의 경계에서 집중된 응력(stress)이 발생되는 것을 확인할 수 있다. 상기 응력은 제1절연층(1100)과 제3절연층(1210, 1220, 1230, 1240, 1250)에 배치되는 패드부의 경계에서 가장 높게 발생되는 것을 확인할 수 있다. Referring to Fig. 10, it can be confirmed that in the circuit board according to the comparative example, concentrated stress is generated at the boundary between the first insulating layer (1100) and the third insulating layer (1210, 1220, 1230, 1240, 1250). It can be confirmed that the stress is generated at its highest at the boundary between the pad portions arranged in the first insulating layer (1100) and the third insulating layer (1210, 1220, 1230, 1240, 1250).
도 11을 참조하면, 본 발명의 실시예에 따른 회로 기판(10)은 제1절연층(100)은, 복수의 제3절연층(131, 132, 133, 134) 및 제3절연층(131, 132, 133, 134) 내 회로 패턴이 각각 제1절연층(100)을 기준으로 수직 방향으로 대칭하게 배치됨에 따라, 회로 기판(10) 내 응력 또한 전 영역에서 상대적으로 균일하게 분포되는 것을 확인할 수 있다. 특히, 본 발명의 실시예에 따른 제1절연층(100)은, 비교예에 따른 제1절연층(1100)의 경계에서 발생되는 응력 대비 상대적으로 낮은 응력이 발생됨에 따라, 회로 기판(10)의 휨 현상이 최소화되는데 의미가 있다. 이상에서, 본 발명의 실시 예를 구성하는 모든 구성 요소들이 하나로 결합하거나 결합하여 동작하는 것으로 설명되었다고 해서, 본 발명이 반드시 이러한 실시 예에 한정되는 것은 아니다. 즉, 본 발명의 목적 범위 안에서라면, 그 모든 구성 요소들이 하나 이상으로 선택적으로 결합하여 동작할 수도 있다. 또한, 이상에서 기재된 '포함하다', '구성하다' 또는 '가지다' 등의 용어는, 특별히 반대되는 기재가 없는 한, 해당 구성 요소가 내재할 수 있음을 의미하는 것이므로, 다른 구성 요소를 제외하는 것이 아니라 다른 구성 요소를 더 포함할 수 있는 것으로 해석되어야 한다. 기술적이거나 과학적인 용어를 포함한 모든 용어들은, 다르게 정의되지 않는 한, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미가 있다. 사전에 정의된 용어와 같이 일반적으로 사용되는 용어들은 관련 기술의 문맥상의 의미와 일치하는 것으로 해석되어야 하며, 본 발명에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다. Referring to FIG. 11, in a circuit board (10) according to an embodiment of the present invention, the first insulating layer (100) has a plurality of third insulating layers (131, 132, 133, 134) and circuit patterns within the third insulating layers (131, 132, 133, 134) are arranged symmetrically in the vertical direction with respect to the first insulating layer (100), and thus it can be confirmed that the stress within the circuit board (10) is also relatively uniformly distributed across the entire region. In particular, the first insulating layer (100) according to an embodiment of the present invention generates a relatively low stress compared to the stress generated at the boundary of the first insulating layer (1100) according to a comparative example, and thus the bending phenomenon of the circuit board (10) is minimized. In the above, even though all components constituting the embodiment of the present invention have been described as being combined as one or operating in combination, the present invention is not necessarily limited to such an embodiment. That is, within the scope of the purpose of the present invention, all of the components may be selectively combined and operated one or more times. In addition, terms such as "include," "comprise," or "have" described above, unless specifically stated to the contrary, mean that the corresponding component may be inherent, and therefore should be interpreted as including other components rather than excluding other components. All terms, including technical or scientific terms, have the same meaning as generally understood by a person of ordinary skill in the art to which the present invention pertains, unless otherwise defined. Commonly used terms, such as terms defined in a dictionary, should be interpreted as being consistent with the contextual meaning of the related technology, and shall not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present invention.
이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서, 본 발명에 개시된 실시 예들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시 예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely an illustrative description of the technical idea of the present invention, and those skilled in the art will appreciate that various modifications and variations may be made without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the technical idea of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.
한편, 상술한 발명의 특징을 갖는 회로기판이 스마트폰, 서버용 컴퓨터, TV 등의 IT 장치나 가전제품에 이용되는 경우, 신호 전송 또는 전력 공급 등의 기능을 안정적으로 할 수 있다. 예를 들어, 본 발명의 특징을 갖는 회로기판이 반도체 패키지 기능을 수행하는 경우, 반도체 칩을 외부의 습기나 오염 물질로부터 안전하게 보호하는 기능을 할 수 있고, 누설전류 혹은 단자 간의 전기적인 단락 문제나 혹은 반도체 칩에 공급하는 단자의 전기적인 개방의 문제를 해결할 수 있다. 또한, 신호 전송의 기능을 담당하는 경우 노이즈 문제를 해결할 수 있다. 이를 통해, 상술한 발명의 특징을 갖는 회로기판은 IT 장치나 가전제품의 안정적인 기능을 유지할 수 있도록 함으로써, 전체 제품과 본 발명이 적용된 회로기판은 서로 기능적 일체성 또는 기술적 연동성을 이룰 수 있다.Meanwhile, when a circuit board having the characteristics of the invention described above is used in IT devices such as smartphones, server computers, TVs, or home appliances, it can stably perform functions such as signal transmission or power supply. For example, when a circuit board having the characteristics of the invention performs a semiconductor package function, it can safely protect semiconductor chips from external moisture or contaminants, and can solve problems such as leakage current or electrical shorts between terminals, or electrical open circuits in terminals supplying semiconductor chips. Furthermore, when it performs a signal transmission function, it can solve noise problems. Through this, the circuit board having the characteristics of the invention described above can maintain the stable function of IT devices or home appliances, thereby enabling the entire product and the circuit board to which the invention is applied to achieve functional integration or technical interoperability with each other.
상술한 발명의 특징을 갖는 회로기판이 차량 등의 운송 장치에 이용되는 경우, 운송 장치로 전송되는 신호의 왜곡 문제를 해결할 수 있고, 또는 운송 장치를 제어하는 반도체 칩을 외부로부터 안전하게 보호하고, 누설전류 혹은 단자 간의 전기적인 단락 문제나 혹은 반도체 칩에 공급하는 단자의 전기적인 개방의 문제를 해결하여 운송 장치의 안정성을 더 개선할 수 있다. 따라서, 운송 장치와 본 발명이 적용된 회로기판은 서로 기능적 일체성 또는 기술적 연동성을 이룰 수 있다. When a circuit board having the characteristics of the invention described above is used in a transportation device such as a vehicle, it can solve the problem of signal distortion transmitted to the transportation device, safely protect the semiconductor chip controlling the transportation device from external sources, and solve the problem of leakage current or electrical short circuit between terminals, or electrical open of the terminal supplying the semiconductor chip, thereby further improving the stability of the transportation device. Accordingly, the transportation device and the circuit board to which the present invention is applied can achieve functional integration or technical interoperability with each other.
Claims (10)
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| KR20170067459A (en) * | 2015-12-08 | 2017-06-16 | 삼성전기주식회사 | Package substrate |
| US20200163223A1 (en) * | 2018-11-20 | 2020-05-21 | AT&S (Chongqing) Company Limited | Method of Manufacturing a Component Carrier Using a Separation Component, the Component Carrier, and a Semifinished Product |
| KR20200106247A (en) * | 2019-03-04 | 2020-09-14 | 주식회사 심텍 | Tulti printed circuit board having vertical type passive element and method of manufacturing the same |
| KR20220138205A (en) * | 2021-04-05 | 2022-10-12 | 엘지이노텍 주식회사 | Circuit board and package substrate including the same |
| KR20240048190A (en) * | 2022-10-06 | 2024-04-15 | 엘지이노텍 주식회사 | Semiconductor package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170067459A (en) * | 2015-12-08 | 2017-06-16 | 삼성전기주식회사 | Package substrate |
| US20200163223A1 (en) * | 2018-11-20 | 2020-05-21 | AT&S (Chongqing) Company Limited | Method of Manufacturing a Component Carrier Using a Separation Component, the Component Carrier, and a Semifinished Product |
| KR20200106247A (en) * | 2019-03-04 | 2020-09-14 | 주식회사 심텍 | Tulti printed circuit board having vertical type passive element and method of manufacturing the same |
| KR20220138205A (en) * | 2021-04-05 | 2022-10-12 | 엘지이노텍 주식회사 | Circuit board and package substrate including the same |
| KR20240048190A (en) * | 2022-10-06 | 2024-04-15 | 엘지이노텍 주식회사 | Semiconductor package |
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