[go: up one dir, main page]

WO2025206051A1 - Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de liaison/découpe de puces - Google Patents

Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de liaison/découpe de puces

Info

Publication number
WO2025206051A1
WO2025206051A1 PCT/JP2025/012234 JP2025012234W WO2025206051A1 WO 2025206051 A1 WO2025206051 A1 WO 2025206051A1 JP 2025012234 W JP2025012234 W JP 2025012234W WO 2025206051 A1 WO2025206051 A1 WO 2025206051A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive layer
conductive adhesive
adhesive film
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/012234
Other languages
English (en)
Japanese (ja)
Inventor
尚明 三原
宝生 瀧本
洋 金子
岳史 松島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of WO2025206051A1 publication Critical patent/WO2025206051A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • the present invention relates to a conductive adhesive film for bonding semiconductor devices to components such as substrates and lead frames, a method for bonding dissimilar materials using a conductive adhesive film, a semiconductor device structure having a conductive adhesive film, and a dicing die bond film having a conductive adhesive film.
  • a semiconductor device bonding member (Patent Document 1) has been proposed that includes a thermal stress relaxation layer made of any of silver, copper, gold, and aluminum, a first silver brazing material layer primarily composed of silver and tin provided on the side of the thermal stress relaxation layer where the semiconductor device is bonded, and a second silver brazing material layer primarily composed of silver and tin provided on the side of the thermal stress relaxation layer where the substrate is bonded.
  • a heat-resistant resin selected from the group consisting of polyimide resin, bismaleimide resin, polyamide resin, silicone resin, polyphenylene ether resin, polyphenylene sulfide resin and polyether ketone resin.
  • the film has a first adhesive layer and a second adhesive layer containing copper (Cu), tin (Sn), a bismaleimide resin, and an organic phosphine represented by the general formula (1) above and/or an organic sulfide represented by the general formula (2) above.
  • FIG. 1 is a cross-sectional view schematically illustrating an outline of a conductive adhesive film according to one embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically illustrating an outline of a conductive adhesive film according to another embodiment of the present invention.
  • 1 is a cross-sectional view showing an outline of a semiconductor device structure according to an embodiment of the present invention; 1 is a cross-sectional schematic diagram showing an overview of a dicing die bond film in one embodiment of the dicing die bond film according to the present invention.
  • R 1 -P(R 2 )-R 3 -P(R 4 )-R 5 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • R 6 -S-R 7 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • the organic phosphine represented by the following general formula (1) and the organic sulfide represented by the following general formula (2) function as a reducing agent.
  • R 1 , R 2 , R 3 , R 4 , and R 5 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • R 6 -S-R 7 ...(2) In the general formula (2), R 6 and R 7 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • an oxide film forms on the copper and tin metal components of the first adhesive layer, when the power semiconductor is bonded to a substrate, lead frame, or other component by sintering such as transient liquid phase sintering (TLPS), the oxide film inhibits the sintering reaction, i.e., inhibits the formation of an alloy phase containing copper and tin.
  • TLPS transient liquid phase sintering
  • the organic phosphine represented by general formula (1) and the organic sulfide represented by general formula (2) reduce the oxide film, preventing the formation of an oxide film on the copper and tin.
  • Neither the organic phosphine represented by general formula (1) nor the organic sulfide represented by general formula (2) contains the following functional group in its chemical structure: Therefore, when the organic phosphine represented by general formula (1) reduces the oxide film and chemically changes to an organic phosphine oxide, and when the organic sulfide represented by general formula (2) reduces the oxide film and chemically changes to an organic sulfoxide, no water molecules are generated as a by-product.
  • the organic phosphine represented by general formula (1) chemically changes to organic phosphine oxide and the organic sulfide represented by general formula (2) chemically changes to organic sulfoxide, no water molecules are generated as by-products, preventing the formation of voids in the first adhesive layer in a sintered state.
  • the organic phosphine represented by general formula (1) and the organic sulfide represented by general formula (2) have excellent void prevention properties.
  • the first adhesive layer contains an organic phosphine represented by general formula (1) and/or an organic sulfide represented by general formula (2), there is no need to apply pressure to a semiconductor device structure in which a power semiconductor is mounted on a substrate or the like to eliminate voids, and therefore damage such as cracking can be prevented from occurring in the power semiconductor.
  • an organic phosphine represented by general formula (1) or an organic sulfide represented by general formula (2) may be used alone as the reducing agent, or both an organic phosphine represented by general formula (1) and an organic sulfide represented by general formula (2) may be used in combination.
  • the melting point of the organic phosphine represented by general formula (1) is not particularly limited, but from the perspective of storage stability, it is preferable that the organic phosphine maintain a fine crystalline state before being introduced into the semiconductor device mounting process. This suppresses diffusion within the conductive adhesive film composition system, thereby preventing the reaction from proceeding too quickly. However, when the organic phosphine is introduced into the semiconductor device mounting process and heating is initiated, diffusion within the conductive adhesive film composition system begins quickly, allowing the reaction to begin. From this perspective, a melting point of 60°C or higher is preferred, and 80°C or higher is particularly preferred.
  • organic phosphines represented by general formula (1) include organic phosphines having a xanthene skeleton.
  • R 1 , R 2 , R 4 , and R 5 are each aromatic and R 3 is an aromatic group having a xanthene skeleton, and it is particularly preferred that R 1 , R 2 , R 4 , and R 5 are each an optionally substituted phenyl group, and R 3 is an aromatic group having a xanthene skeleton.
  • R 1 , R 2 , R 4 , and R 5 are each aromatic and R 3 is an aliphatic group, and it is particularly preferred that R 1 , R 2 , R 4 , and R 5 are each an optionally substituted phenyl group, and R 3 is an aliphatic group having 1 to 10 carbon atoms.
  • the melting point of the organic sulfide represented by general formula (2) is not particularly limited, but from the perspective of storage stability, it is preferable that the organic sulfide maintain a fine crystalline state before being introduced into the semiconductor device mounting process. This suppresses diffusion within the conductive adhesive film composition system, thereby preventing the reaction from proceeding prematurely. However, when the organic sulfide is introduced into the semiconductor device mounting process and heating begins, it is preferable that diffusion within the conductive adhesive film composition system begins quickly, allowing the reaction to begin. Therefore, a melting point of 60°C or higher is preferable, and 80°C or higher is particularly preferable.
  • the conductive adhesive film of the present invention uses bismaleimide resin as the thermosetting resin.
  • This resin forms a crosslinked polyimide with excellent heat resistance upon thermosetting, as it can withstand the high operating temperatures of power semiconductors and does not contain protonic hydroxyl groups, preventing the generation of outgassing.
  • bismaleimide resin has stress relaxation properties, which improves the thermal fatigue resistance of the conductive adhesive film after sintering.
  • the amounts of the metal component containing copper and tin, the reducing agent composed of an organic phosphine represented by general formula (1) and/or an organic sulfide represented by general formula (2), and the bismaleimide resin in the first adhesive layer are not particularly limited.
  • the lower limit of the amount of the metal component containing copper and tin in 100% by mass of the first adhesive layer is preferably 60% by mass, more preferably 70% by mass, and particularly preferably 75% by mass, from the viewpoint of obtaining a sintered first adhesive layer and improving the bonding reliability of the semiconductor device.
  • the upper limit of the amount of the metal component containing copper and tin in 100% by mass of the first adhesive layer is preferably 95% by mass, more preferably 90% by mass, and particularly preferably 85% by mass.
  • the lower limit of the amount of the reducing agent composed of an organic phosphine represented by general formula (1) and/or an organic sulfide represented by general formula (2) in 100% by mass of the first adhesive layer is preferably 0.1% by mass, more preferably 1.0% by mass, and particularly preferably 1.5% by mass, in order to improve sintering ease and void prevention.
  • the upper limit of the amount of the reducing agent composed of an organic phosphine represented by general formula (1) and/or an organic sulfide represented by general formula (2) in 100% by mass of the first adhesive layer is preferably 20% by mass, more preferably 10% by mass, and particularly preferably 5% by mass.
  • the lower limit of the amount of bismaleimide resin in 100% by mass of the first adhesive layer is preferably 5% by mass, more preferably 10% by mass, and particularly preferably 15% by mass, in order to further improve thermal fatigue resistance.
  • the upper limit of the amount of bismaleimide resin in 100% by mass of the first adhesive layer is preferably 40% by mass, more preferably 35% by mass, and particularly preferably 30% by mass.
  • ⁇ Method of manufacturing conductive adhesive film> An example of a method for producing the conductive adhesive film of the present invention is described below. First, the components constituting the first adhesive layer and the second adhesive layer are dissolved in an organic solvent such as toluene to prepare a conductive composition constituting the first adhesive layer and the second adhesive layer. The prepared conductive composition is then coated to the desired thickness on both sides of the film-like perforated metal foil constituting the stress relief layer.
  • the coating method is not particularly limited, and known coating methods can be used, such as a comma coater, screen printing, bar coater, applicator, blade coater, knife coater, roll coater, and gravure coater.
  • a drying process is performed at 100°C to 150°C for 1 minute to 30 minutes, thereby forming a first adhesive layer on the first main surface of the stress relief layer, which is the side to which the semiconductor device is bonded, and a second adhesive layer on the second main surface, which is the side to which the member is bonded.
  • first barrier layer and the second barrier layer are formed on both sides of the perforated metal foil by sputtering or the like before the conductive composition is applied to the perforated metal foil, and the conductive composition is then applied to the first and second barrier layers.
  • the conductive adhesive film of the present invention can bond components with different thermal expansion coefficients while suppressing thermal fatigue and stress accumulation, so that the conductive adhesive film of the present invention can be used to bond different materials with different linear expansion coefficients. Furthermore, as described above, the conductive adhesive film of the present invention can be sintered at normal pressure, low temperature, and in a short time, so that different materials with different linear expansion coefficients can be bonded under easy sintering conditions.
  • components with different thermal expansion coefficients are prepared, such as a SiC power semiconductor and a lead frame or substrate on which the SiC power semiconductor is mounted.
  • a structure is formed in which the conductive adhesive film of the present invention is sandwiched between the SiC power semiconductor and the lead frame or substrate.
  • the formed structure is then heat-treated at atmospheric pressure in an inert gas (e.g., nitrogen gas) atmosphere at a temperature of 275°C or less for less than 10 minutes.
  • the above heat treatment i.e., pressureless sintering puts the first adhesive layer and second adhesive layer into a sintered state, making it possible to bond dissimilar materials (SiC power semiconductor and lead frame or substrate) with different linear expansion coefficients.
  • the lower limit of the heating temperature for the above heat treatment is, for example, 230°C, and preferably 250°C.
  • the lower limit of the heating time for the above heat treatment is, for example, 3 minutes, and preferably 5 minutes.
  • the semiconductor device structure 100 of the present invention has a structure in which a semiconductor device 20 such as a SiC power semiconductor is mounted on a member such as a substrate or lead frame 30.
  • the semiconductor device 20 is bonded to a first adhesive layer of the conductive adhesive film 10 of the present invention
  • the substrate or lead frame 30 is bonded to a second adhesive layer of the conductive adhesive film 10 of the present invention.
  • the semiconductor device structure of the present invention can be manufactured, for example, by placing a semiconductor device such as a SiC power semiconductor on the surface of a substrate or lead frame or other member via the conductive adhesive film of the present invention, and then performing a heat treatment (e.g., reflow treatment) at atmospheric pressure in an inert gas (e.g., nitrogen gas) atmosphere at a temperature of 275°C or less for less than 10 minutes.
  • a heat treatment e.g., reflow treatment
  • an inert gas e.g., nitrogen gas
  • the dicing die bond film 200 of the present invention has a structure in which a dicing tape 40 is attached to the second adhesive layer side of the conductive adhesive film 10 of the present invention.
  • the dicing die bond film 200 of the present invention has an embodiment in which the conductive adhesive film 10 of the present invention and the dicing tape 40 are integrated.
  • the semiconductor wafer By attaching a semiconductor wafer to the first adhesive layer of the conductive adhesive film of the present invention, the semiconductor wafer can be attached to the dicing tape via the conductive adhesive film of the present invention.
  • the dicing die bond film of the present invention allows the semiconductor wafer to be attached to the dicing tape via the conductive adhesive film of the present invention, which prevents the semiconductor chips from flying off when the semiconductor wafer is diced to a predetermined size to produce semiconductor chips.
  • Room temperature is defined as being within the range of 25°C ⁇ 5°C.
  • Dicing tape having an acrylic adhesive on a polyolefin substrate was attached to the conductive adhesive film prepared as described above to obtain dicing die bond films for Examples 1 to 9 and Comparative Examples 1 to 4.
  • Nofumer BC non-oxide: 2,3-dimethyl-2,3-diphenylbutane, a curing agent for bismaleimide resin, NOF Corporation.
  • the evaluation and measurement items are as follows:
  • Thermal fatigue resistance 1 The mounted samples of Examples 1 to 9 and Comparative Examples 1 to 4 were subjected to a thermal shock test (TCT) in a temperature range of -45°C to 200°C for 500 cycles, and the mounted samples after the test were visually inspected for peeling of the SiC chip and evaluated according to the following criteria, with a rating of ⁇ or higher being considered a pass.
  • TCT thermal shock test

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

La présente invention concerne un film adhésif conducteur (10) pour assembler un dispositif à semi-conducteur et un élément, ledit film adhésif conducteur (10) comprenant : une couche de relâchement de contrainte (1) configurée à partir d'une feuille métallique perforée dans laquelle un trou débouchant est disposé sur la surface principale d'une feuille métallique formée d'au moins un métal sélectionné dans le groupe constitué par le cuivre (Cu), un alliage de cuivre (Cu), l'aluminium (Al) et un alliage d'aluminium (Al) ; une première couche adhésive (2) contenant du cuivre (Cu), de l'étain (Sn), une résine bismaléimide, et une phosphine organique et/ou un sulfure organique, une première couche adhésive (2) étant disposée sur le côté de la couche de relâchement de contrainte (1) à laquelle le dispositif à semi-conducteur est joint ; et une seconde couche adhésive (3) contenant du cuivre (Cu), de l'étain (Sn), une résine bismaléimide, et une phosphine organique et/ou un sulfure organique, ladite seconde couche adhésive (3) étant disposée sur le côté de la couche de relâchement de contrainte (1) faisant face au côté auquel le dispositif à semi-conducteur est joint.
PCT/JP2025/012234 2024-03-28 2025-03-26 Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de liaison/découpe de puces Pending WO2025206051A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024052820 2024-03-28
JP2024-052820 2024-03-28

Publications (1)

Publication Number Publication Date
WO2025206051A1 true WO2025206051A1 (fr) 2025-10-02

Family

ID=97218990

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/012234 Pending WO2025206051A1 (fr) 2024-03-28 2025-03-26 Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de liaison/découpe de puces

Country Status (1)

Country Link
WO (1) WO2025206051A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027017A1 (fr) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Matériau de connexion électroconducteur, procédé de connexion de bornes les unes aux autres à l'aide du matériau de connexion électroconducteur et procédé de fabrication de borne de connexion
JP2012124465A (ja) * 2010-11-18 2012-06-28 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、フリップチップ型半導体裏面用フィルムの製造方法、及び、半導体装置
WO2017022523A1 (fr) * 2015-08-03 2017-02-09 古河電気工業株式会社 Composition conductrice
WO2017138254A1 (fr) * 2016-02-10 2017-08-17 古河電気工業株式会社 Film adhésif électriquement conducteur et film de découpage/fixation de puce l'utilisant
JP2022050871A (ja) * 2020-09-18 2022-03-31 株式会社半導体熱研究所 半導体デバイスの接合部材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027017A1 (fr) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Matériau de connexion électroconducteur, procédé de connexion de bornes les unes aux autres à l'aide du matériau de connexion électroconducteur et procédé de fabrication de borne de connexion
JP2012124465A (ja) * 2010-11-18 2012-06-28 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、フリップチップ型半導体裏面用フィルムの製造方法、及び、半導体装置
WO2017022523A1 (fr) * 2015-08-03 2017-02-09 古河電気工業株式会社 Composition conductrice
WO2017138254A1 (fr) * 2016-02-10 2017-08-17 古河電気工業株式会社 Film adhésif électriquement conducteur et film de découpage/fixation de puce l'utilisant
JP2022050871A (ja) * 2020-09-18 2022-03-31 株式会社半導体熱研究所 半導体デバイスの接合部材

Similar Documents

Publication Publication Date Title
EP3041042B1 (fr) Procédé de fabrication d'un ensemble et procédé de fabrication d'un substrat de module de puissance
JP5725060B2 (ja) 接合体、パワーモジュール用基板、及びヒートシンク付パワーモジュール用基板
TWI335850B (en) Joints and method for forming the same
US10103035B2 (en) Copper-ceramic bonded body and power module substrate
US6444562B1 (en) Nickel alloy films for reduced intermetallic formation in solder
JP6494802B2 (ja) 電力用半導体装置および電力用半導体装置を製造する方法
US20130043594A1 (en) Method for manufacturing semiconductor device and semiconductor device
JP2016048782A (ja) 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
EP3706161B1 (fr) Procédé de connexion d'un composant électronique à un substrat par brasage à l'aide d'un alliage de brasage sn-ag-cu-sb-ni ou sn-ag-cu-sb-ni-(co,fe) et agencement brasé correspondant
WO2014103955A1 (fr) Module d'alimentation
JP2016048781A (ja) 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
JPH08255973A (ja) セラミックス回路基板
US20060081995A1 (en) Soldered material, semiconductor device, method of soldering, and method of manufacturing semiconductor device
JP2005032834A (ja) 半導体チップと基板との接合方法
EP3407380B1 (fr) Corps lié ainsi que procédé de fabrication de celui-ci, et substrat pour module de puissance ainsi que procédé de fabrication de celui-ci
JP6432208B2 (ja) パワーモジュール用基板の製造方法、及び、ヒートシンク付パワーモジュール用基板の製造方法
WO2023053901A1 (fr) Matériau de liaison et boîtier de semi-conducteur
WO2025206051A1 (fr) Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de liaison/découpe de puces
JP5355586B2 (ja) 接合構造体の接合方法
WO2025206049A1 (fr) Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur et film de fixage de puces à découpage en dés
WO2025206050A1 (fr) Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur, et film de découpage en dés et de fixation de puce
US20230126663A1 (en) Layer structure and chip package that includes the layer structure
JP3407839B2 (ja) 半導体装置のはんだバンプ形成方法
JP2006278463A (ja) サブマウント
JPH0786444A (ja) 半導体用複合放熱基板の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 25776807

Country of ref document: EP

Kind code of ref document: A1