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WO2025206050A1 - Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur, et film de découpage en dés et de fixation de puce - Google Patents

Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur, et film de découpage en dés et de fixation de puce

Info

Publication number
WO2025206050A1
WO2025206050A1 PCT/JP2025/012233 JP2025012233W WO2025206050A1 WO 2025206050 A1 WO2025206050 A1 WO 2025206050A1 JP 2025012233 W JP2025012233 W JP 2025012233W WO 2025206050 A1 WO2025206050 A1 WO 2025206050A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive layer
conductive adhesive
adhesive film
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/012233
Other languages
English (en)
Japanese (ja)
Inventor
尚明 三原
宝生 瀧本
洋 金子
岳史 松島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of WO2025206050A1 publication Critical patent/WO2025206050A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • high-capacity power semiconductors such as SiC
  • SiC high-capacity power semiconductors
  • high-capacity power semiconductors themselves maintain their switching performance even at high current densities and the resulting high operating temperatures (junction temperatures)
  • junction temperatures when high-capacity power semiconductors are repeatedly exposed to high operating temperatures, the surrounding mounting components, particularly the lead-free solder used in the die bond area, can be destroyed by thermal fatigue caused by repeated exposure to high and low temperatures, resulting in the failure of devices incorporating high-capacity power semiconductors.
  • a semiconductor device bonding member (Patent Document 1) has been proposed that includes a thermal stress relaxation layer made of any of silver, copper, gold, and aluminum, a first silver brazing material layer primarily composed of silver and tin provided on the side of the thermal stress relaxation layer where the semiconductor device is bonded, and a second silver brazing material layer primarily composed of silver and tin provided on the side of the thermal stress relaxation layer where the substrate is bonded.
  • Patent Document 1 which is made of a silver brazing material layer whose main components are silver and tin
  • an oxide film forms on the silver and tin, which poses the problem of inhibiting the transient liquid phase sintering (TLPS) reaction when joining a power semiconductor to a substrate, lead frame, or other component. Therefore, studies are being conducted to prevent the formation of this oxide film by reducing it by adding an alcohol-based or acid-based flux (reducing agent) to the adhesive layer whose main components are silver and tin.
  • TLPS transient liquid phase sintering
  • a conductive adhesive film [3] A conductive adhesive film according to [1] or [2], wherein the soft, highly thermally conductive metal has an alloy containing copper (Cu) and at least one additive metal selected from the group consisting of zinc (Zn), manganese (Mn) and aluminum (Al).
  • a first barrier layer containing at least one metal component selected from the group consisting of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni) and tin (Sn) is further provided between the stress relief layer and the second adhesive layer.
  • a semiconductor device structure in which the semiconductor device is bonded to the first adhesive layer of the conductive adhesive film described in [1] or [2], and a substrate or lead frame is bonded to the second adhesive layer of the conductive adhesive film described in [1] or [2], and the semiconductor device is mounted on the substrate or lead frame.
  • a dicing die bond film in which a dicing tape is attached to the second adhesive layer side of the conductive adhesive film according to [1] or [2].
  • the conductive adhesive film of the present invention by providing a first adhesive layer and a second adhesive layer containing copper (Cu), tin (Sn), a bismaleimide resin, and an organic phosphine represented by the above general formula (1) and/or an organic sulfide represented by the above general formula (2), a conductive adhesive film with excellent thermal fatigue resistance, ease of sintering, and void prevention can be obtained without using expensive precious metals.
  • the first adhesive layer and the second adhesive layer contain an alloy containing copper (Cu) and nickel (Ni) and/or an alloy containing tin (Sn) and nickel (Ni), and have at least one endothermic peak within the temperature range of 100°C to 250°C in differential scanning calorimetry, and do not have this endothermic peak after heating at 250°C for 5 minutes in a nitrogen atmosphere at atmospheric pressure.
  • This allows the first adhesive layer and the second adhesive layer to be sintered at atmospheric pressure, at a low temperature, and in a short time, thereby reliably improving the ease of sintering.
  • a first barrier layer containing at least one metal component selected from the group consisting of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), and tin (Sn) is further provided between the stress relaxation layer and the first adhesive layer
  • a second barrier layer containing at least one metal component selected from the group consisting of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), and tin (Sn) is further provided between the stress relaxation layer and the second adhesive layer.
  • the first adhesive layer and the second adhesive layer further contain a compound represented by the above general formula (3), which acts as a curing agent for the bismaleimide resin, thereby improving the heat resistance of the first adhesive layer and the second adhesive layer.
  • the compound represented by the above general formula (3) is a non-oxide compound and does not interfere with the reducing agent, the organic phosphine represented by the above general formula (1) and/or the organic sulfide represented by the above general formula (2), thereby preventing the loss of void prevention properties.
  • FIG. 1 is a cross-sectional view schematically illustrating an outline of a conductive adhesive film according to one embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically illustrating an outline of a conductive adhesive film according to another embodiment of the present invention.
  • 1 is a cross-sectional view showing an outline of a semiconductor device structure according to an embodiment of the present invention; 1 is a cross-sectional schematic diagram showing an overview of a dicing die bond film in one embodiment of the dicing die bond film according to the present invention.
  • Embodiments of the conductive adhesive film of the present invention a method for joining dissimilar materials using a conductive adhesive film, a semiconductor device structure having a conductive adhesive film, and a dicing die bond film having a conductive adhesive film are described in detail below with reference to the drawings.
  • the conductive adhesive film 10 of the present invention is a conductive adhesive film for bonding a semiconductor device and a member, and comprises a predetermined stress relaxation layer 1, a predetermined first adhesive layer 2 provided on the side of the stress relaxation layer 1 to which the semiconductor device is bonded, and a predetermined second adhesive layer 3 provided on the side of the stress relaxation layer 1 opposite to the side to which the semiconductor device is bonded.
  • the stress relaxation layer 1 has a first main surface and a second main surface opposite to the first main surface, and the first adhesive layer 2 is provided on the first main surface, which is the side to which the semiconductor device is bonded, and the second adhesive layer 3 is provided on the second main surface, which is the side to which a member is bonded.
  • the overall thickness of the conductive adhesive film of the present invention can be selected appropriately depending on the conditions of use of the conductive adhesive film, etc., but the lower limit is preferably 10 ⁇ m, more preferably 30 ⁇ m, and particularly preferably 50 ⁇ m, from the viewpoint of further alleviating the thermal stress that occurs between the semiconductor device and the member on which the semiconductor device is mounted.
  • the upper limit of the overall thickness of the conductive adhesive film is preferably 300 ⁇ m, more preferably 250 ⁇ m, and particularly preferably 200 ⁇ m, from the viewpoint of preventing an increase in the thermal resistance of the conductive adhesive film and improving its heat dissipation characteristics.
  • the stress relief layer in the conductive adhesive film of the present invention is composed of a soft, highly thermally conductive metal having a 0.2% yield strength of 200 N/ mm2 or less at 25°C, a thermal conductivity of 50 W/m ⁇ K or more at 25°C, and a volume resistivity of 100 ⁇ cm or less.
  • the stress relief layer is a layer that relieves thermal stress that occurs between a semiconductor device and a member on which the semiconductor device is mounted.
  • the conductive adhesive film of the present invention is provided with a stress relief layer composed of the above-mentioned soft, highly thermally conductive metal, which provides excellent thermal conductivity and electrical conductivity, and is also capable of flexibly deforming in response to thermal stress even if the thermal expansion coefficients of the semiconductor device and the member on which the semiconductor device is mounted are different. This suppresses thermal fatigue and stress accumulation between the semiconductor device and the member on which the semiconductor device is mounted, thereby preventing damage to the semiconductor device structure on which the semiconductor device is mounted.
  • the soft, highly thermally conductive metal is not particularly limited as long as it is a metal member having the properties of a 0.2% yield strength at 25°C of 200 N/mm2 or less, a thermal conductivity at 25°C of 50 W/m ⁇ K or more, and a volume resistivity of 100 ⁇ cm or less.
  • an alloy containing copper (Cu) and at least one additive metal selected from the group consisting of zinc (Zn), manganese (Mn), and aluminum (Al) is preferred, as this more reliably suppresses thermal fatigue and stress accumulation between the semiconductor device and the member on which the semiconductor device is mounted, thereby more reliably preventing damage to the semiconductor device structure on which the semiconductor device is mounted.
  • the stress relief layer may be composed of a single layer of the soft, highly thermally conductive metal, or may be composed of multiple layers of the soft, highly thermally conductive metal. If the stress relief layer is composed of multiple layers of the soft, highly thermally conductive metal, the layers may be composed of layers of the soft, highly thermally conductive metal having the same metal composition, or layers of the soft, highly thermally conductive metal having different metal compositions.
  • the 0.2% proof stress at 25°C is preferably 180 N/mm2 or less , and more preferably 150 N/ mm2 or less.
  • the lower limit of the 0.2% proof stress at 25°C is not particularly limited, but from the viewpoint of imparting a certain level of strength to the stress relaxation layer, it is preferably 10 N/ mm2 or more.
  • the thermal conductivity of the soft, highly thermally conductive metal at 25°C is preferably 60 W/m ⁇ K or more, and more preferably 100 W/m ⁇ K or more.
  • the volume resistivity of the soft, highly thermally conductive metal is preferably 40 ⁇ cm or less, and more preferably 10 ⁇ cm or less.
  • the thickness of the stress relaxation layer can be selected appropriately depending on the conditions of use of the conductive adhesive film of the present invention, but the lower limit is preferably 5 ⁇ m, more preferably 20 ⁇ m, and particularly preferably 40 ⁇ m, from the viewpoint of further relaxing the thermal stress that occurs between the semiconductor device and the member on which the semiconductor device is mounted.
  • the upper limit of the thickness of the stress relaxation layer is preferably 250 ⁇ m, more preferably 200 ⁇ m, and particularly preferably 150 ⁇ m, from the viewpoint of preventing an increase in the thermal resistance of the conductive adhesive film and improving its heat dissipation characteristics.
  • the first adhesive layer is provided on the side of the above-mentioned stress relaxation layer to which the semiconductor device is bonded, and contains copper (Cu), tin (Sn), a bismaleimide resin, and an organic phosphine represented by the following general formula (1) and/or an organic sulfide represented by the following general formula (2).
  • R 1 -P(R 2 )-R 3 -P(R 4 )-R 5 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • R 6 -S-R 7 each independently represent an aromatic or aliphatic organic group containing carbon (C) and hydrogen (H), and are each a functional group does not contain in the structure.
  • the copper (Cu) and tin (Sn) components in the first adhesive layer are sintered by a transient liquid phase sintering (TLPS) reaction or the like, and in the state after sintering (sintered state), they become an alloy phase containing copper (Cu) and tin (Sn), resulting in an increase in the melting point. Furthermore, a semiconductor device is bonded to the first adhesive layer with its melting point increased. Therefore, even when the operating temperature of semiconductor devices such as power semiconductors is high, the bonding reliability between the first adhesive layer and the semiconductor device is excellent.
  • TLPS transient liquid phase sintering
  • the first adhesive layer contains at least copper (Cu) and tin (Sn) as metal components, but does not contain precious metal components such as silver. Therefore, the first adhesive layer does not contain expensive precious metals.
  • an oxide film forms on the copper and tin metal components of the first adhesive layer, when the power semiconductor is bonded to a substrate, lead frame, or other component by sintering such as transient liquid phase sintering (TLPS), the oxide film inhibits the sintering reaction, i.e., inhibits the formation of an alloy phase containing copper and tin.
  • TLPS transient liquid phase sintering
  • the organic phosphine represented by general formula (1) and the organic sulfide represented by general formula (2) reduce the oxide film, preventing the formation of an oxide film on the copper and tin.
  • Neither the organic phosphine represented by general formula (1) nor the organic sulfide represented by general formula (2) contains the following functional group in its chemical structure: Therefore, when the organic phosphine represented by general formula (1) reduces the oxide film and chemically changes to an organic phosphine oxide, and when the organic sulfide represented by general formula (2) reduces the oxide film and chemically changes to an organic sulfoxide, no water molecules are generated as a by-product.
  • the organic phosphine represented by general formula (1) chemically changes to organic phosphine oxide and the organic sulfide represented by general formula (2) chemically changes to organic sulfoxide, no water molecules are generated as by-products, preventing the formation of voids in the first adhesive layer in a sintered state.
  • the organic phosphine represented by general formula (1) and the organic sulfide represented by general formula (2) have excellent void prevention properties.
  • the first adhesive layer contains an organic phosphine represented by general formula (1) and/or an organic sulfide represented by general formula (2), it is not necessary to subject a semiconductor device structure in which a power semiconductor is mounted on a substrate or the like to pressure treatment to eliminate voids, and therefore damage such as cracking can be prevented from occurring in the power semiconductor.
  • the conductive adhesive film of the present invention may contain, as a reducing agent, either an organic phosphine represented by general formula (1) or an organic sulfide represented by general formula (2), or may use both an organic phosphine represented by general formula (1) and an organic sulfide represented by general formula (2) in combination.
  • the melting point of the organic phosphine represented by general formula (1) is not particularly limited, but from the perspective of storage stability, it is preferable that the organic phosphine maintain a fine crystalline state before being introduced into the semiconductor device mounting process. This suppresses diffusion within the conductive adhesive film composition system, thereby preventing the reaction from proceeding too quickly. However, when the organic phosphine is introduced into the semiconductor device mounting process and heating is initiated, diffusion within the conductive adhesive film composition system begins quickly, allowing the reaction to begin. From this perspective, a melting point of 60°C or higher is preferred, and 80°C or higher is particularly preferred.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

La présente invention concerne un film adhésif conducteur (10) pour assembler un dispositif à semi-conducteur et un élément, le film adhésif conducteur comprenant : une couche de relaxation de contrainte (1) composée d'un métal souple hautement thermoconducteur ayant une limite conventionnelle d'élasticité à 0,2 % à 25 °C de 200 N/mm2 ou moins, une conductivité thermique à 25 °C de 50 W/m·K ou plus, et une résistivité volumique de 100 μΩ·cm ou moins ; une première couche adhésive (2) qui comprend du cuivre (Cu), de l'étain (Sn), une résine de bismaléimide, et une phosphine organique et/ou un sulfure organique, et qui est disposée sur le côté, de la couche de relaxation de contrainte (1), auquel le dispositif à semi-conducteur est joint ; et une seconde couche adhésive (3) qui comprend du cuivre (Cu), de l'étain (Sn), une résine de bismaléimide, et une phosphine organique et/ou un sulfure organique, et qui est disposée sur le côté, de la couche de relaxation de contrainte (1), opposé au côté auquel le dispositif à semi-conducteur est joint.
PCT/JP2025/012233 2024-03-28 2025-03-26 Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur, et film de découpage en dés et de fixation de puce Pending WO2025206050A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024052819 2024-03-28
JP2024-052819 2024-03-28

Publications (1)

Publication Number Publication Date
WO2025206050A1 true WO2025206050A1 (fr) 2025-10-02

Family

ID=97218904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/012233 Pending WO2025206050A1 (fr) 2024-03-28 2025-03-26 Film adhésif conducteur, procédé d'assemblage de matériaux dissemblables, structure de dispositif à semi-conducteur, et film de découpage en dés et de fixation de puce

Country Status (1)

Country Link
WO (1) WO2025206050A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027017A1 (fr) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Matériau de connexion électroconducteur, procédé de connexion de bornes les unes aux autres à l'aide du matériau de connexion électroconducteur et procédé de fabrication de borne de connexion
JP2012124465A (ja) * 2010-11-18 2012-06-28 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、フリップチップ型半導体裏面用フィルムの製造方法、及び、半導体装置
WO2017022523A1 (fr) * 2015-08-03 2017-02-09 古河電気工業株式会社 Composition conductrice
WO2017138254A1 (fr) * 2016-02-10 2017-08-17 古河電気工業株式会社 Film adhésif électriquement conducteur et film de découpage/fixation de puce l'utilisant
JP2022050871A (ja) * 2020-09-18 2022-03-31 株式会社半導体熱研究所 半導体デバイスの接合部材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027017A1 (fr) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Matériau de connexion électroconducteur, procédé de connexion de bornes les unes aux autres à l'aide du matériau de connexion électroconducteur et procédé de fabrication de borne de connexion
JP2012124465A (ja) * 2010-11-18 2012-06-28 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、フリップチップ型半導体裏面用フィルムの製造方法、及び、半導体装置
WO2017022523A1 (fr) * 2015-08-03 2017-02-09 古河電気工業株式会社 Composition conductrice
WO2017138254A1 (fr) * 2016-02-10 2017-08-17 古河電気工業株式会社 Film adhésif électriquement conducteur et film de découpage/fixation de puce l'utilisant
JP2022050871A (ja) * 2020-09-18 2022-03-31 株式会社半導体熱研究所 半導体デバイスの接合部材

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