WO2025204381A1 - Stage and method for manufacturing stage - Google Patents

Abstract

This stage for mounting a substrate thereon includes: a base material having a first surface, and a second surface on the side opposite first surface; a first insulating film that is disposed on the base material and that includes a third surface, a fourth surface in contact with the first surface and on the side opposite the third surface, and a plurality of holes provided on the third surface side; and a second insulating film that is disposed on the first insulating film and that includes a fifth surface, a sixth surface in contact with the third surface and on the side opposite the fifth surface, and an intrusion part in contact with side walls of the plurality of holes and intruding into the plurality of holes.

Description

Stage and method for manufacturing the stage

One embodiment of the present invention relates to a stage for placing a substrate. Also, another embodiment of the present invention relates to a method for manufacturing a stage for placing a substrate.

Semiconductor devices utilize the semiconducting properties of silicon and other materials. In recent years, semiconductor devices have been incorporated into almost all electronic devices, enabling control according to the functions of each electronic device. Semiconductor devices are constructed by stacking insulating and conductive films on a substrate such as a silicon wafer (Si-wafer) and then patterning these films or the substrate. For example, these films are stacked on the substrate using semiconductor manufacturing equipment capable of methods such as evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and these films or substrates are patterned using semiconductor manufacturing equipment capable of photolithography processes. The photolithography process involves forming a resist on the films to be patterned, exposing the resist, forming a resist mask by development, partially removing the films by etching, and then removing the resist mask.

Semiconductor manufacturing equipment includes a mounting table (hereafter referred to as the stage) on which a substrate is placed. The characteristics of the above-mentioned film are greatly influenced by the conditions for forming the film and the conditions for etching the film. For example, these conditions include the gas (reactive gas) supplied to the semiconductor manufacturing equipment and the voltage applied to the stage. Therefore, for example, the stage and the components included in the stage are required to be resistant to corrosion by the gas (reactive gas) (high corrosion resistance) and to be resistant to deterioration due to the applied voltage (high voltage resistance and insulation). Note that, for example, components included in the stage include a cooling plate, electrostatic chuck, heater, etc.

Known methods for forming an insulating film on the surface of a substrate included in a stage include thermal spraying (e.g., ceramic thermal spraying) and anodic oxidation. Patent Documents 1 and 2 describe stages including a substrate on whose surface an insulating film is formed using ceramic thermal spraying, with the aim of preventing a decline in the insulating properties of the stage.

JP 2014-013874 A Registered Utility Model No. 2600558

On the other hand, insulating films formed on the surface of a substrate using conventional methods are prone to cracking. For example, if the insulating film contains cracks, the dielectric strength of the insulating film decreases, and the corrosion resistance, dielectric strength, and insulating properties of the stage also decrease. One known measure to prevent a decrease in the dielectric strength of the insulating film is to form a protective film on the insulating film to protect the insulating film. However, if the adhesion strength between the protective film and the insulating film is low, the protective film will peel off from the insulating film, making it difficult to prevent a decrease in the dielectric strength of the insulating film. If there are problems with the dielectric strength of the insulating film, the corrosion resistance, dielectric strength, and insulating properties of the stage, or the adhesion between the protective film and the insulating film, the long-term reliability of the stage will decrease.

One of the objectives of embodiments of the present invention is to provide a stage that can prevent a decrease in long-term reliability. Another objective of embodiments of the present invention is to provide a method for manufacturing a stage that can prevent a decrease in long-term reliability.

In one embodiment of the present invention, a stage for placing a substrate includes a base material having a first surface and a second surface opposite the first surface; a third surface, a fourth surface in contact with the first surface and opposite the third surface, and a first insulating film disposed on the base material, the first insulating film including a plurality of holes formed on the third surface; a fifth surface, a sixth surface in contact with the third surface and opposite the fifth surface, and a second insulating film disposed on the first insulating film, the second insulating film including penetration portions in contact with the sidewalls of the plurality of holes and penetrating into the plurality of holes.

A method for manufacturing a stage for supporting a substrate according to one embodiment of the present invention includes using a base material having a first surface and a second surface opposite the first surface; forming a first insulating film on the first surface, the first insulating film including a third surface, a fourth surface opposite the third surface, and a plurality of holes provided on the third surface side; and forming a second insulating film in contact with the third surface and sidewalls of the plurality of holes and including penetration portions that penetrate into the plurality of holes.

According to one embodiment of the present invention, a stage capable of suppressing a decrease in long-term reliability is provided. Furthermore, according to one embodiment of the present invention, a method for manufacturing a stage capable of suppressing a decrease in long-term reliability is provided.

FIG. 1 is a perspective view showing a configuration of a stage according to a first embodiment of the present invention. FIG. 1 is a plan view showing a configuration of a stage according to a first embodiment of the present invention. 3 is a schematic diagram showing a cross section of the stage shown in FIG. 2 taken along line A1-A2. FIG. 1 is a schematic diagram showing a cross section of a conventional stage. 3 is a flowchart showing a method for manufacturing a stage according to the first embodiment of the present invention. 3A to 3C are schematic views for explaining a method of manufacturing a stage according to the first embodiment of the present invention. FIG. 10 is a schematic diagram showing a cross section of a semiconductor manufacturing apparatus including a stage according to a second embodiment of the present invention.

Below, a stage or a method for manufacturing a stage according to one embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the invention, and should not be interpreted as being limited to the description of the embodiment exemplified below.

In order to clarify the explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment, but this is merely an example and does not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements with the same function as those explained in the previous drawings may be given the same reference numerals, and duplicate explanations may be omitted.

In this specification and drawings, the same reference numeral is used to collectively refer to multiple identical or similar components, and a hyphen and number are added after the reference numeral when referring to them individually.

In this specification, the letters "first," "second," or "third" attached to each component are convenient labels used to distinguish between components and have no other meaning unless otherwise specified.

In the following explanation, for the sake of convenience, terms indicating directions such as "up" and "down" may be used. "Down" refers to the direction in which gravity acts relative to the stage, and "up" refers to the opposite.

1. First embodiment
A stage 100 according to a first embodiment of the present invention will be described with reference to FIGS.

[1-1. Overview of Stage 100]
An overview of the stage 100 will be described with reference to Figures 1 to 3. Figure 1 is a perspective view showing the configuration of the stage 100. Figure 2 is a plan view showing the configuration of the stage 100. Figure 3 is a cross-sectional view showing a cross section of the stage 100 taken along the line A1-A2.

The stage 100 has a disk-like shape. For example, the stage 100 has a diameter large enough to support a 12-inch silicon wafer. The stage 100 also includes a base material 110, a first insulating film 120, a second insulating film 130, a top surface (first surface 132) on which a substrate (e.g., a silicon wafer) can be placed, a bottom surface (second surface 114), holes 102, and grooves 104. The arrangement, number, and shape of the holes 102 and grooves 104 may be modified as appropriate to suit the specifications and applications of the semiconductor manufacturing equipment.

The substrate 110 includes a first surface 112 and a second surface 114 opposite the first surface 112. The substrate 110 may also be made up of multiple substrates bonded together.

The first insulating film 120 includes a first surface 122 and a second surface 124 opposite the first surface 122. The first insulating film 120 is provided so as to cover and be in contact with the substrate 110. The second surface 124 of the first insulating film 120 is in contact with the first surface 112 of the substrate 110. The first insulating film 120 is also provided so as to cover and be in contact with the inner walls of the hole 102 and the inner walls of the groove portion 104. Although not shown, the first insulating film 120 is provided so as to cover and be in contact with the side surfaces of the substrate 110. As an example, the first insulating film 120 in the stage 100 shown in FIG. 2 is provided on the first surface 112 of the substrate 110, but the first insulating film 120 may also be provided so as to cover and be in contact with the second surface 114.

The second insulating film 130 includes a first surface 132 and a second surface 134 opposite the first surface 132. The second insulating film 130 is provided so as to cover and be in contact with the first insulating film 120. The second surface 134 of the second insulating film 130 is in contact with the first surface 122 of the first insulating film 120. Also, for example, the second insulating film 130 is provided so as to cover and be in contact with the first insulating film 120 provided on the inner wall of the hole 102 and the inner wall of the groove portion 104. Note that the second insulating film 130 does not have to cover the first insulating film 120 provided on the inner wall of the hole 102.

The groove 104 may be a flow path for circulating a medium. For example, the medium is used to control the temperature of a substrate placed on the stage 100. For example, the medium is a liquid such as water, alcohol such as isopropanol or ethylene glycol, or silicone oil. It may also be a gas with good thermal conductivity such as helium (He). The medium may be used to cool the stage 100 or to heat the stage 100. For example, the groove 104 may be included inside a bonded substrate in which multiple substrates are bonded.

Furthermore, although not shown in the figures, for example, a space may be included inside a bonded substrate formed by bonding multiple substrates, and the stage 100 may be configured to circulate the medium through this space. Also, for example, a heat source may be disposed in this space. The heat source, like the medium, is used to control the temperature of the substrate placed on the stage 100. For example, the heat source is a sheathed heater. A sheathed heater has the function of generating heat when electricity is passed through it.

Holes 102 are for lift pins used to lift the substrate placed on stage 100.

The material used for the substrate 110 is metal, ceramic, or the like. The material used for the substrate 110 may also be glass. For example, the metal is an alloy such as aluminum (Al), titanium (Ti), or stainless steel. One example of the material used for the substrate 110 is aluminum.

The material used for the first insulating film 120 may be a material capable of satisfying the desired insulating properties, the desired withstand voltage characteristics, or the desired corrosion resistance. For example, the material used for the first insulating film 120 is an inorganic insulating material. For example, the inorganic insulating material is a metal oxide, specifically, an oxide containing at least one element selected from alkaline earth metals, rare earth metals, aluminum, tantalum (Ta), titanium, chromium (Cr), zirconium (Zr), yttrium (Y), silicon (Si), and niobium (Nb), or a composite oxide thereof. For example, the material used for the first insulating film 120 is aluminum oxide (Al ₂ O ₃ ).

The material used for the second insulating film 130 is a material that has excellent adhesion to the first insulating film 120. Furthermore, the material used for the second insulating film 130 may be a material that can satisfy the desired insulating properties, may be a material that can satisfy the desired voltage resistance characteristics, or may be a material that can satisfy the desired corrosion resistance. For example, the material used for the second insulating film 130 of the stage 100 is a resin material. Examples of resin materials include polyimide resin, polyetherimide resin, polyamideimide resin, polytetrafluoroethylene resin, polyether ether ketone resin, and polyphenylene sulfide resin. An example of a material used for the second insulating film 130 is polybenzimidazole (PBI).

[1-2. Example of a cross section of the stage 100]
The cross-sectional structure of the stage 100 will be described with reference to Figures 3 and 4. Figure 4 is a schematic diagram showing the cross section of a conventional stage. Structures that are the same as or similar to those in Figures 1 to 3 will be described as necessary.

As explained in "1-1," the first insulating film 120 contains aluminum oxide and is provided to cover and contact the substrate 110.

Furthermore, as described in "1-1," the second insulating film 130 contains polybenzimidazole. As shown in more detail in FIG. 3, the second insulating film 130 is provided on the first surface 112 in a first region (e.g., region 200) that does not include cracks (gaps) 125c-1, 125c-2, and 125c-3, as well as on the first surface 112 in a region (second region) in the first insulating film 120 that includes cracks 125c-1, 125c-2, and 125c-3. For example, the cracks include cracks 125c-2 and 125c-3 that do not reach the first surface 112, and crack 125c-1 that reaches the first surface 112.

The first insulating film 120 and the second insulating film 130 are stacked in region 200. A gap (space) may be provided between the substrate 110 and the second insulating film 130, and the second insulating film 130 may fill all or part of the cracks 125c-1 to 125c-3. Furthermore, the cracks 125c-1 to 125c-3 are provided between the first insulating films 120. In other words, the second region is adjacent to the first region (region 200), and the first region (region 200) is provided between the second regions.

Furthermore, as shown in the enlarged view of region 200 at the bottom of Figure 3, the first insulating film 120 includes a plurality of holes 140. Each of the plurality of holes 140 includes a sidewall (inner wall) 142 and a bottom 144. As will be described in detail later, the method for manufacturing the stage 100 does not necessarily include a sealing process. Here, for example, the sealing process is a process in which, rather than filling the holes with an insulating film, the sidewalls and bottoms of the holes are covered with an insulating film to improve the corrosion resistance or weather resistance of the insulating film containing the holes.

For example, the second insulating film 130 of the stage 100 includes an intrusion portion 136 that intrudes into the hole 140, contacts the sidewall 142, and is spaced apart from the bottom 144. The intrusion portion 136 fills at least a portion of the hole 140 along the sidewall 142 of the hole 140. The distance separating the second insulating film 130 from the bottom 144 may be the same for each of the multiple holes 140, may be different for each of the multiple holes 140, or may be the same for some of the multiple holes 140 and different for others. Similar to the distance separating the second insulating film 130 from the bottom 144, the diameter of the multiple holes 140 may be the same for each of the multiple holes 140, may be different for each of the multiple holes 140, or may be the same for some of the holes 140 and different for others. Note that by separating the second insulating film 130 (intrusion portion 136) from the bottom 144 and leaving a portion of the hole 140 between the intrusion portion 136 and the bottom 144, it may be possible to expect suppression of heat conduction due to the insulating effect. Furthermore, the intrusion portion 136 may be provided so as to intrude into the hole 140 and to contact the sidewall 142 and bottom 144 of the hole 140. Furthermore, although not shown in the figures, the intrusion portion 136 may be provided so as to be separated from the sidewall 142 and bottom 144 of the hole 140.

For example, the hole diameter W1 of crack 125c-1 (hole diameter on the first surface 132 side) is 0.1 μm or more and 20 μm or less, and the hole diameter W2 of hole 140 may be 1 nm or more and 50 nm or less, or even 10 nm or more and 20 nm or less. Also, for example, the thickness T1 of the substrate 110 may be approximately 30 mm, the thickness T2 of the first insulating film 120 may be 5 μm or more and 100 μm or less, or preferably 10 μm or more and 50 μm or less, and the thickness T3 of the second insulating film 130 may be 0.1 μm or more and 100 μm or less, or preferably 1 μm or more and 50 μm or less. Thicknesses T2 and T3 are, for example, 30 μm and 15 μm. Hole diameter W2 is much smaller than hole diameter W1, and thickness T3 is sufficiently thinner than thickness T1. Thickness T3 may be equal to or smaller than thickness T2, or may be sufficiently thinner.

Here, referring to Figure 4, a conventional stage will be described. For example, the method of manufacturing a conventional stage includes a sealing process. For example, in a stage that has undergone the sealing process, the sidewalls and bottoms of the holes 140 in the first insulating film 120 are not at least partially filled with hydrated oxide 150, but rather the hydrated oxide 150 covers the sidewalls and bottoms of the holes 140 in the first insulating film 120. In this state, the second insulating film 130 is formed. Details will be described later, but when the adhesion strength of the conventional stage is measured, it is found that the adhesion strength between the second insulating film 130 and the first insulating film 120 is low, and therefore the second insulating film 130 easily peels off from the first insulating film 120.

On the other hand, the second insulating film 130 is in contact with the first insulating film 120 (first surface 122 and cracks 125c-1 to 125c-3), and therefore has high adhesion to the first insulating film 120 (first surface 122 and cracks 125c-1 to 125c-3). Furthermore, the penetration portion 136 of the second insulating film 130 penetrates into the hole 140 and contacts a portion of the sidewall 142 of the multiple holes 140 along a portion of the sidewall 142 of the multiple holes 140, thereby providing high adhesion between the second insulating film 130 and the multiple holes 140. As a result, the first insulating film 120 is covered by the second insulating film 130 and is not exposed. Furthermore, because the base material 110 is covered by the first insulating film and the second insulating film 130 and is in contact with the first insulating film and is not exposed, the insulating properties of the base material 110 are higher than those of a base material that includes cracks (gaps) or holes.

Furthermore, because the second insulating film 130 can sufficiently cover the first surface 122, the cracks 125c-1 to 125c-3, and the multiple holes 140, the second insulating film 130 has high coverage performance for the first insulating film 120. Therefore, the first insulating film 120 and the second insulating film 130 have high coverage performance for the substrate 110.

Here, as an example of measurement results, the measurement results of the adhesion strength of the second insulating film 130 will be described with reference to Table 1. In the sample of the stage 100 used in the measurement, the first insulating film 120 and the second insulating film were stacked in this order on the substrate 110 without undergoing a sealing treatment. Note that in the sample of the stage according to the conventional technology, a sealing treatment was performed, and the first insulating film 120 and the second insulating film were stacked in this order on the substrate 110. As an example, the measurement was performed using a Romulus tensile tester, and measurement points were four points on the stage. Note that the adhesion strength shown in Table 1 is the average value of the four points. As shown in Table 1, the adhesion strength of the stage 100 is approximately three times that of the conventional technology. Therefore, the adhesion strength of the stage 100 is greater than that of stages according to the conventional technology, demonstrating an improvement in the adhesion strength of the stage 100.

　　　　　　　　　　　　　　　　　　

As explained above, the stage 100 has a configuration in which a first insulating film 120 and a second insulating film 130 containing polybenzimidazole are laminated in this order on a substrate 110. As a result, the stage 100 has a configuration in which the substrate 110 is covered with a laminated film that has excellent adhesion between the first insulating film 120 and the second insulating film. This improves the insulation properties, voltage resistance characteristics, and corrosion resistance of the stage 100, making it possible to prevent a decrease in the long-term reliability of the stage 100.

[1-3. Fabrication of stage 100]
A method for manufacturing the stage 100 will be described with reference to Figures 5 and 6. Figure 5 is a flowchart showing the method for manufacturing the stage 100. Figure 6 is a schematic diagram for explaining the method for manufacturing the stage 100. Configurations that are the same as or similar to those in Figures 1 to 4 will be described as necessary.

For example, the method for manufacturing stage 100 includes step 110 (S110), step 120 (S120), and step 130 (S130). As explained in "1-2," the method for manufacturing stage 100 does not include performing a sealing process.

When fabrication of the stage 100 begins, the first insulating film 120 is formed on the prepared substrate 110 (step 110). As explained in "1-1," the material of the substrate 110 is, for example, an aluminum substrate. For example, the aluminum substrate is anodized using an anodization method, and aluminum oxide, which is the first insulating film 120, is formed on the aluminum substrate. For example, from the perspective of improving voltage resistance, the thickness T2 of the first insulating film 120 may be 5 μm or more and 100 μm or less, and preferably 10 μm or more and 50 μm or less. The anodization method can form the first insulating film 120 on the substrate 110 more cheaply than other processing methods. Note that the method for forming the first insulating film 120 is not limited to anodization. For example, the method for forming the first insulating film 120 may be thermal spraying.

Next, step 120 involves heating the substrate 110 (heat treatment). For example, to heat the substrate 110, a mounting table (not shown) on which the substrate 110 is placed may be heated.

Next, the second insulating film 130 is formed on the first insulating film 120 (step 130 (S130)). Specifically, the spraying device 180 sprays the resin material 182 onto the first insulating film 120 (spraying process), thereby forming the second insulating film 130 on the first surface 122 of the first insulating film 120, in the cracks 125c-1 to 125c-3, and in the multiple holes 140. The spraying device 180 moves above the substrate 110 along the first surface 122.

As explained in "1-1," as an example, the second insulating film 130 contains polybenzimidazole, and the resin material 182 contains polybenzimidazole. Polybenzimidazole is a viscous material, and the aluminum oxide contained in the first insulating film 120 is solid. For example, from the standpoint of voltage resistance and adhesion, the thickness T3 of the second insulating film 130 may be 0.1 μm or more and 100 μm or less, and preferably 1 μm or more and 50 μm or less.

For example, step 130 may include a spraying device 180 spraying a resin material 182 dissolved in a solvent onto the first insulating film 120 to form the second insulating film 130 on the first insulating film 120 (heat spraying process). For example, the state in which the resin material 182 is dissolved in a solvent is sometimes referred to as a varnish state. Because the viscosity of the resin material 182 dissolved in a solvent is lower than the viscosity of the resin material 182 itself, the second insulating film 130 not only easily contacts the cracks 125c-1 to 125c-3 and easily fills the cracks (gaps), but also easily contacts the sidewalls 142 and bottoms 144 of the multiple holes 140 and easily enters the holes 140.

Furthermore, for example, in step 130, depending on the shape of the substrate 110, the second insulating film 130 may be applied and formed on the first insulating film 120 using electrodeposition (electrodeposition coating), spin coating, dip coating, etc., or the second insulating film 130 may be applied directly to the first insulating film 120 using a brush or roller. For example, electrodeposition (electrodeposition coating), spin coating, dip coating, brushes, rollers, etc. are well-known methods and devices for applying resin materials. Furthermore, for example, in the method of applying the resin material described above, the gas inside the device for applying the resin material is evacuated using an exhaust device including a vacuum pump, so that the second insulating film 130 can be applied to the first insulating film 120 while expelling the gas (e.g., air) that has entered the multiple holes 140. As a result, the second insulating film 130 can easily contact the cracks 125c-1 to 125c-3, filling the cracks (gaps), and can also contact the sidewalls 142 or bottoms 144 of the multiple holes 140. In other words, for example, the intrusion portion 136 can contact the sidewalls 142 or bottoms 144. Furthermore, by using this method and apparatus, the second insulating film 130 can be applied and formed relatively easily on the first insulating film 120. For example, by using this method and apparatus, the time required to form the second insulating film 130 can be reduced.

Note that step 130 may include step 120, and step 130 and step 120 may be combined into one step.

In this way, stage 100 is produced, and production of stage 100 is complete.

As explained above, the method for manufacturing the stage 100 does not include a sealing process, but rather includes forming the second insulating film 130 on the first surface 122 of the first insulating film 120, the cracks 125c-1 to 125c-3, and the sidewalls 142 or bottoms 144 of the multiple holes 140. In other words, thanks to the method for manufacturing the stage 100, the stage 100 includes not only the first surface 122 and cracks (gaps) 125c-1 to 125c-3 of the first insulating film 120, but also the second insulating film 130 (intrusion portion 136) that penetrates into the multiple holes 140, where it was difficult to form an insulating film using conventional technology, and is formed along and filled (filled) the sidewalls 142 or bottoms 144 of the multiple holes 140.

As a result, the stage 100 can cover and fill (fill) not only cracks (gaps) but also the sidewalls 142 or bottoms 144 of the multiple holes 140 with the second insulating film 130 (penetration portions 136), thereby providing higher adhesion, insulation, voltage resistance, and corrosion resistance than stages of conventional technology. Therefore, the stage 100 can prevent a decrease in long-term reliability.

Furthermore, the substrate 110 or the first insulating film 120 may be surface-treated by plasma treatment. When the first insulating film 120 is formed on a plasma-treated substrate 110, the uniformity of the first insulating film 120 is improved. As a result, the insulating properties and corrosion resistance of the stage 100 are improved.

Alternatively, the first insulating film 120 may be polished by blasting. By polishing the first insulating film 120, the first insulating film 120 is planarized.

[2. Second embodiment]
The configuration of a semiconductor manufacturing apparatus according to a second embodiment of the present invention will be described with reference to FIG. 7. The semiconductor manufacturing apparatus includes a stage 100. For example, the semiconductor manufacturing apparatus is a film processing apparatus 300. The film processing apparatus 300 is a so-called CVD apparatus. Note that the configuration of the film processing apparatus 300 described with reference to FIG. 7 is one example, and the configuration of the film processing apparatus 300 is not limited to the configuration shown in FIG. 7. Furthermore, the film processing apparatus 300 is not limited to a CVD apparatus. In the description of the film processing apparatus 300, configurations that are the same as or similar to the configurations described with reference to FIGS. 1 to 6 will be described as necessary.

Figure 7 is a schematic cross-sectional view of a film processing apparatus 300. The film processing apparatus 300 chemically reacts a reactive gas and can chemically form various films on a substrate. The film processing apparatus 300 includes a chamber 302. The chamber 302 provides a space in which the reactive gas is chemically reacted and various films are chemically formed on a substrate.

An exhaust device 304 is connected to the chamber 302. For example, the exhaust device 304 can reduce the pressure inside the chamber 302. An inlet pipe 306 is provided in the chamber 302. The inlet pipe 306 can introduce a reactive gas into the chamber 302 via a valve 308. Various gases can be used as the reactive gas depending on the film to be formed. The reactive gas may also be a liquid at room temperature. For example, the reactive gas may be silane, dichlorosilane, tetraethoxysilane, tungsten fluoride, trimethylaluminum, etc. By using silane, dichlorosilane, tetraethoxysilane, etc., a thin film of silicon, silicon oxide, silicon nitride, or the like is formed on the substrate. Furthermore, by using tungsten fluoride, trimethylaluminum, etc., a thin metal or metal oxide thin film of tungsten, aluminum, aluminum oxide, or the like is formed on the substrate.

Microwave source 312 is installed above chamber 302 via waveguide 310. Microwave source 312 includes an antenna for supplying microwaves. The microwaves generated by microwave source 312 are introduced into chamber 302 via waveguide 310. The reactive gas is converted into plasma by the microwaves, the chemical reaction of the gas is promoted by various active species contained in the plasma, and the product of the chemical reaction is deposited on the substrate, forming a thin film on the substrate.

As an optional configuration, a magnet 344 may be provided within the chamber 302. The magnet 344 can increase the density of the plasma. Magnets 316 and 318 may also be provided on the side of the chamber 302. Magnets 316 and 318 may be permanent magnets or electromagnets having electromagnetic coils.

A stage 100 for placing a substrate is provided at the bottom of the chamber 302, and a thin film can be formed on the substrate while the substrate is placed on the stage 100. Optionally, a power supply 324 may be connected to the stage 100. The power supply 324 can apply a voltage equivalent to high-frequency power to the stage 100.

For example, if the stage 100 is equipped with a sheathed heater (not shown), a heater power supply 330 that controls the sheathed heater is connected to the stage 100. Optionally, the stage 100 may be connected to a power supply 326 for an electrostatic chuck that secures the substrate to the stage 100, a temperature controller 328 that controls the temperature of the medium circulating inside the stage 100 (groove 104), and a rotation control device (not shown) that rotates the stage 100 around the rotation axis 106. For example, by using the sheathed heater, heater power supply 330, and temperature controller 328, it is possible to control the temperature of the stage 100 as well as the temperature of the substrate placed on the stage 100.

The film processing apparatus 300 according to the second embodiment includes a stage 100. As a result, the film processing apparatus 300 is able to uniformly heat the substrate and precisely control the heating temperature. The stage 100 has excellent insulating properties, which improves the withstand voltage of the film processing apparatus 300 relative to the voltage applied to the substrate. Furthermore, the film processing apparatus 300, which includes a stage 100 that has excellent corrosion resistance, insulating properties, withstand voltage performance, and adhesion between the protective film and the insulating film, has excellent long-term reliability, allowing users to reduce the number of maintenance tasks for the film processing apparatus 300.

As an embodiment of the present invention, an example in which a first insulating film 120 and a second insulating film 130 are provided on a substrate 110 included in a stage 100 of a semiconductor manufacturing apparatus has been described, but embodiments of the present invention are not limited to semiconductor manufacturing apparatuses. For example, the substrate 110 on which the first insulating film 120 and the second insulating film 130 are provided may be a component used in the aerospace field, or a component used in the automotive field, or may be applied to applications including components in which the first insulating film 120 and the second insulating film 130 are provided on a substrate 110 containing aluminum.

The components, stages, stage manufacturing methods, and semiconductor manufacturing apparatuses described above as embodiments of the present invention can be combined as appropriate, provided they are not mutually inconsistent. Furthermore, the components, stages, stage manufacturing methods, and semiconductor manufacturing apparatuses described above as embodiments of the present invention can be interchanged as appropriate, provided they are not mutually inconsistent. Furthermore, even if a person skilled in the art adds, deletes, or modifies components as appropriate based on each embodiment, these additions, deletions, or design changes are within the scope of the present invention, provided they still incorporate the spirit of the present invention.

Furthermore, even if there are other effects and advantages different from those brought about by the above-described embodiments, if they are clear from the description in this specification or can be easily predicted by a person skilled in the art, they are naturally understood to be brought about by the present invention.

100: Stage, 102: Hole, 104: Groove, 106: Rotation shaft, 110: Base material, 112: First surface, 114: Second surface, 120: First insulating film, 122: First surface, 124: Second surface, 125c-1: Crack, 125c-2: Crack, 125c-3: Crack, 130: Second insulating film, 132: First surface, 134: Second surface, 136: Intrusion portion, 140: Hole, 142: Sidewall, 144: bottom, 150: hydrated oxide, 180: spraying device, 182: resin material, 200: area, 300: film processing device, 302: chamber, 304: exhaust device, 306: inlet pipe, 308: valve, 310: waveguide, 312: microwave source, 316: magnet, 318: magnet, 324: power supply, 326: power supply, 328: temperature controller, 330: heater power supply, 344: magnet

Claims (16)

a substrate having a first surface and a second surface opposite the first surface;
a first insulating film disposed on the substrate, the first insulating film including a third surface, a fourth surface in contact with the first surface and opposite to the third surface, and a plurality of holes provided on the third surface side;
a second insulating film disposed on the first insulating film, the second insulating film including a fifth surface, a sixth surface in contact with the third surface and opposite to the fifth surface, and intrusion portions in contact with side walls of the plurality of holes and intruding into the plurality of holes;
a stage for placing a substrate thereon, The stage described in claim 1, wherein the second insulating film includes a resin material. The stage described in claim 2, wherein the resin material includes polybenzimidazole. The stage described in claim 1, wherein the substrate and the first insulating film contain aluminum. the first insulating film includes cracks;
The stage according to claim 1 , wherein the second insulating film contacts the crack. the hole includes a bottom;
The stage of claim 1 , wherein the penetration is spaced from the bottom. The stage described in claim 1, further including a space in which a heat source can be placed. using a substrate having a first surface and a second surface opposite the first surface;
forming a first insulating film on the first surface, the first insulating film including a third surface, a fourth surface opposite to the third surface, and a plurality of holes provided on the third surface side;
forming a second insulating film in contact with the third surface and sidewalls of the plurality of holes and including an intrusion portion that intrudes into the plurality of holes;
A method for manufacturing a stage for placing a substrate, comprising: The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes spraying a resin material onto the first insulating film. The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes applying a resin material to the first insulating film using electrodeposition, dip coating, or spin coating. The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes applying a resin material directly to the first insulating film using a brush or roller. The method for manufacturing a stage according to claim 9, wherein the resin material includes polybenzimidazole. The stage manufacturing method of claim 8, wherein the base material and the first insulating film contain aluminum. the first insulating film includes a gap;
The method for manufacturing a stage according to claim 8 , wherein the second insulating film contacts the gap. the hole includes a bottom;
The method for manufacturing a stage according to claim 8 , wherein the penetration portions in contact with the side walls of the plurality of holes are spaced apart from the bottom portions. The method for manufacturing a stage according to claim 8, wherein the stage further includes a space in which a heat source can be placed.