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WO2025126792A1 - Dispositif à semi-conducteur d'utilisation de mesure de courant - Google Patents

Dispositif à semi-conducteur d'utilisation de mesure de courant Download PDF

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Publication number
WO2025126792A1
WO2025126792A1 PCT/JP2024/041234 JP2024041234W WO2025126792A1 WO 2025126792 A1 WO2025126792 A1 WO 2025126792A1 JP 2024041234 W JP2024041234 W JP 2024041234W WO 2025126792 A1 WO2025126792 A1 WO 2025126792A1
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WIPO (PCT)
Prior art keywords
current
circuit
measurement
semiconductor device
shunt resistor
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PCT/JP2024/041234
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English (en)
Japanese (ja)
Inventor
仁 小林
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/02—Testing or calibrating of apparatus covered by the other groups of this subclass of auxiliary devices, e.g. of instrument transformers according to prescribed transformation ratio, phase angle, or wattage rating

Definitions

  • the present invention relates to a semiconductor device for measuring current, and in particular to a semiconductor device for measuring current flowing through a shunt resistor provided in a device to be measured.
  • the core magnetic sensor method current measurement circuits with magnetic sensors and a magnetic core
  • the core magnetic sensor method is capable of measuring small currents, it is difficult to ensure a wide dynamic range from small to large currents due to hysteresis and magnetic saturation caused by the magnetic core.
  • the current measurement accuracy of core magnetic sensors is generally around ⁇ 1%.
  • coreless magnetic sensors which do not have a magnetic core, do not suffer from magnetic saturation due to the magnetic core and can measure in larger current ranges, but they have issues with not being able to perform high-precision measurements due to external noise and the installation location. As a result, adjustments are required after installation, and they are rarely used to measure the current of lithium-ion batteries.
  • the present invention aims to provide a semiconductor device for current measurement that measures the current flowing through a shunt resistor and that suppresses common cause failures.
  • a current measuring semiconductor device is a current measuring semiconductor device that measures a current flowing through a shunt resistor provided in a device to be measured, and includes a first current measuring circuit that measures the current flowing through the shunt resistor by detecting the voltage across the shunt resistor, and a second current measuring circuit that has a coreless magnetic sensor and measures the current flowing through the shunt resistor using the coreless magnetic sensor.
  • the present invention provides a semiconductor device for current measurement that measures the current flowing through a shunt resistor and suppresses common cause failures.
  • FIG. 1 is a circuit block diagram showing a configuration of a current measuring semiconductor device according to an embodiment of the present invention.
  • FIG. 2A is an external view showing an example of mounting the current measuring semiconductor device according to the embodiment.
  • FIG. 2B is a diagram showing an example of the layout of main circuit elements in the current measuring semiconductor device according to the embodiment.
  • FIG. 3 is a diagram illustrating the current-voltage characteristics of the shunt resistor included in the device to be measured and the coreless magnetic sensor included in the semiconductor device for current measurement, and correction in the semiconductor device for current measurement.
  • FIG. 4 is a flowchart showing the operation of the current measuring semiconductor device according to the embodiment.
  • FIG. 4 is a flowchart showing the operation of the current measuring semiconductor device according to the embodiment.
  • FIG. 5 is a flowchart showing an operation of detecting an abnormality in a shunt resistor by the semiconductor device for current measurement according to the embodiment.
  • FIG. 6 is a flowchart showing an operation of detecting an abnormality in a measurement target device by the current measuring semiconductor device according to the embodiment.
  • a coreless magnetic sensor is mounted on a current measuring semiconductor device (hereinafter simply referred to as a "semiconductor device”) that measures the current flowing through a shunt resistor, thereby realizing a coreless current sensor circuit, which makes it possible to realize a redundant current measuring circuit in which common cause failures are suppressed.
  • a semiconductor device that measures the current flowing through a shunt resistor
  • a second current measurement circuit that measures the current with a coreless magnetic sensor. That is, in the low current region where the coreless magnetic sensor circuit cannot make measurements, a magnetic sensor dead zone is set, and the measurement value of the second current measurement circuit in that magnetic sensor dead zone is ignored (that is, only the measurement value by the shunt resistor is used).
  • the semiconductor device is provided with a temperature measurement circuit for the coreless magnetic sensor and the shunt resistor, making it possible to correct the temperature dependence of the first current measurement circuit and the second current measurement circuit.
  • coreless magnetic sensors are made up of only semiconductor devices, so they are very small and easy to install.
  • the magnetic flux density generated by a coreless magnetic sensor varies depending on the distance between the magnetic sensor and the wiring being measured, such as the bus bar, and on external noise disturbances. For this reason, in order to use a coreless magnetic sensor to measure the absolute value of current, it is essential to perform corrections after installation, and it is difficult to detect minute currents, so it is rarely used to measure the current of lithium-ion batteries.
  • a first current measurement circuit that measures current using a shunt resistor and a second current measurement circuit that measures current using a coreless magnetic sensor are provided in the same semiconductor device, making it possible to correct the second current measurement circuit that measures current using a magnetic sensor using the measurement value of the first current measurement circuit that measures current using a shunt resistor.
  • the semiconductor device according to the present invention which is equipped with a current measurement circuit that measures current through a shunt resistor, is installed in close proximity to the shunt resistor, making it possible to install the coreless magnetic sensor on the semiconductor device in an optimal location for detecting the magnetic flux generated by the current flowing through the shunt resistor.
  • the semiconductor device according to the present invention can easily be equipped with a temperature measurement circuit, it is easy to correct the temperature dependence of the coreless magnetic sensor on the semiconductor device and the shunt resistance on the device to be measured.
  • connection means an electrical connection, and includes not only a case where two circuit elements are directly connected, but also a case where two circuit elements are indirectly connected with another circuit element inserted between the two circuit elements.
  • FIG. 1 is a circuit block diagram showing the configuration of a semiconductor device 30 for measuring current according to an embodiment. This diagram also shows a measurement target device 3 that is the subject of current measurement by the semiconductor device 30 for measuring current, and a higher-level system 90 to which the measurement results by the semiconductor device 30 for measuring current are notified.
  • the current measuring semiconductor device 30 is a semiconductor device that measures the current flowing through the shunt resistor 4 provided in the measurement target device 3 and notifies the higher-level system 90, and is realized, for example, as a one-chip semiconductor or a semiconductor in which multiple chips are mixed in one package, excluding the temperature sensor 75. Note that the temperature sensor 75 may also be provided in a one-chip semiconductor or in one package, like other circuit components.
  • the current measurement semiconductor device 30 includes a first current measurement circuit 10 that measures the current flowing through the shunt resistor 4 by detecting the voltage across the shunt resistor 4 provided in the measurement target device 3, a second current measurement circuit 20 that redundantly measures the current flowing through the shunt resistor 4 using a coreless magnetic sensor 50, a temperature measurement circuit 70 that measures the temperature of the coreless magnetic sensor 50 and the shunt resistor 4, a signal processing circuit 60 that performs corrections and anomaly detection for the measured values of the first current measurement circuit 10 and the second current measurement circuit 20, and a reference clock generation circuit 80 and a clock distribution circuit 81 for supplying clock signals to each circuit element.
  • a first current measurement circuit 10 that measures the current flowing through the shunt resistor 4 by detecting the voltage across the shunt resistor 4 provided in the measurement target device 3
  • a second current measurement circuit 20 that redundantly measures the current flowing through the shunt resistor 4 using a coreless magnetic sensor 50
  • a temperature measurement circuit 70 that measures the temperature of the coreless magnetic sensor
  • the first current measurement circuit 10 is a circuit that measures the current flowing through the shunt resistor 4 provided in the measurement target device 3, and has input terminals 10a and 10b, a differential variable gain amplifier (VGA) 11, an analog-to-digital converter (ADC) 12 such as a ⁇ type AD converter, a filter (Filter) 13 such as a decimation filter, and chopping circuits 18a to 18f.
  • VGA differential variable gain amplifier
  • ADC analog-to-digital converter
  • Filter filter
  • chopping circuits 18a to 18f a noise-cutting filter circuit 5 (chip resistors 5a and 5b, chip capacitor 6) is provided between the shunt resistor 4 and the input terminals 10a and 10b.
  • the voltage generated across the shunt resistor 4 has noise removed by the filter circuit 5, passes through chopping circuits 18a and 18b and is input to the variable gain amplifier 11, is amplified by the variable gain amplifier 11, and is then input to the analog-to-digital converter 12 via chopping circuits 18c and 18d.
  • the analog-to-digital converter 12 converts the voltage to a digital signal series, which is then input to the filter 13 via chopping circuit 18e.
  • the filter 13 averages the voltage and converts it to a parallel signal, which is then output as a measured value via chopping circuit 18f.
  • Chopping circuits 18a and 18f chop the signal in synchronization with reference clock CK11 from clock distribution circuit 81, thereby globally removing offsets that may occur mainly in signal processing in first current measurement circuit 10.
  • Chopping circuits 18b and 18c chop the differential signal in synchronization with reference clock CK12 from clock distribution circuit 81 to switch the positive and negative sides
  • chopping circuits 18d and 18e chop the differential signal in synchronization with reference clock CK13 from clock distribution circuit 81 to switch the positive and negative sides, thereby mainly removing 1/f noise that may occur mainly in signal processing in variable gain amplifier 11 and analog-to-digital converter 12, respectively.
  • the second current measurement circuit 20 is a circuit that redundantly measures the current flowing through the shunt resistor 4 using the coreless magnetic sensor 50, and includes the coreless magnetic sensor 50, a differential variable gain amplifier (VGA) 21, an analog-to-digital converter (ADC) 22 such as a ⁇ type AD converter, a filter (Filter) 23 such as a decimation filter, and chopping circuits 28a to 28f.
  • the coreless magnetic sensor 50 is composed of a Hall element 51, a current source 52 that applies current to the Hall element 51, and a switch circuit 53 that switches the connection between the Hall element 51 and the current source 52 and the chopping circuit 28a.
  • the voltage generated by the Hall element 51 is input to the variable gain amplifier 21 via the switch circuit 53 and chopping circuit 28a, amplified by the variable gain amplifier 21, input to the analog-digital converter 22 via chopping circuits 28b and 28c, converted to a digital signal series by the analog-digital converter 22, input to the filter 23 via chopping circuit 28d, averaged and converted to a parallel signal by the filter 23, and output as a measured value via chopping circuit 28e.
  • the switch circuit 53 and chopping circuit 28e switch the current application and voltage measurement points for the Hall element 51 and chop the signal in synchronization with the reference clock CK21 from the clock distribution circuit 81, respectively, to globally remove offsets that may occur mainly in signal processing in the second current measurement circuit 20.
  • the chopping circuits 28a and 28b chop the differential signal to switch the positive and negative in synchronization with the reference clock CK22 from the clock distribution circuit 81, and the chopping circuits 28c and 28d chop the differential signal to switch the positive and negative in synchronization with the reference clock CK23 from the clock distribution circuit 81, respectively, to mainly remove 1/f noise that may occur mainly in signal processing in the variable gain amplifier 21 and the analog-to-digital converter 22.
  • the temperature measurement circuit 70 is a circuit that measures the temperatures of the coreless magnetic sensor 50 and the shunt resistor 4, and includes temperature sensors 74 and 75, a multiplexer (MUX) 76, a differential amplifier (Amp) 71, an analog-to-digital converter (ADC) 72 such as a ⁇ type AD converter, a filter (Filter) 73 such as a decimation filter, and chopping circuits 78a to 78g.
  • the temperature sensor 74 is a temperature sensor that is in contact with or close to the coreless magnetic sensor 50 and detects the temperature of the coreless magnetic sensor 50, and is, for example, a semiconductor temperature sensor such as a diode.
  • the temperature sensor 75 is a temperature sensor that is in contact with or close to the shunt resistor 4 and detects the temperature of the shunt resistor 4, and is, for example, a thermistor.
  • the voltage corresponding to the temperature of the Hall element 51 detected by the temperature sensor 74 is input to one input terminal of the multiplexer 76 via the chopping circuit 78a, while the voltage corresponding to the temperature of the shunt resistor 4 detected by the temperature sensor 75 is input to the other input terminal of the multiplexer 76 via the chopping circuit 78b.
  • Only one of the input signals is selected and output by the multiplexer 76, input to the amplifier 71 via the chopping circuit 78c, amplified by the amplifier 71, input to the analog-digital converter 72 via the chopping circuits 78d and 78e, converted to a digital signal series by the analog-digital converter 72, input to the filter 73 via the chopping circuit 78f, averaged and converted to a parallel signal by the filter 73, and output as a measured value via the chopping circuit 78g.
  • Chopping circuits 78a, 78b, and 78g chop the signal in synchronization with reference clock CK31 from clock distribution circuit 81, thereby globally removing offsets that may occur mainly in signal processing in temperature measurement circuit 70.
  • Chopping circuits 78c and 78d chop the differential signal in synchronization with reference clock CK32 from clock distribution circuit 81, swapping the positive and negative signs, while chopping circuits 78e and 78f chop the differential signal in synchronization with reference clock CK33 from clock distribution circuit 81, thereby mainly removing 1/f noise that may occur mainly in signal processing in amplifier 71 and analog-to-digital converter 72, respectively.
  • the signal processing circuit 60 is a processing circuit that performs corrections to the measured values of the first current measurement circuit 10 and the second current measurement circuit 20, and detects abnormalities in the current measurement semiconductor device 30, the coreless magnetic sensor 50, and the shunt resistor 4, and has correction units 61 and 62, a calculation unit 63, a memory unit 64, a comparison unit 65, abnormality detection units 66-68, and a data I/F (interface) 69.
  • the correction units 61 and 62, the calculation unit 63, the comparison unit 65, and the abnormality detection units 66-68 are realized, for example, by a gate array, or a semiconductor memory that stores a program and a processor that executes the program.
  • the memory unit 64 is realized, for example, by a semiconductor memory such as an SRAM.
  • the data I/F (interface) 69 is realized, for example, by a logic circuit.
  • the memory unit 64 stores in advance a temperature coefficient for correcting the temperature dependency of the coreless magnetic sensor 50 and the shunt resistor 4 obtained by the temperature measurement circuit 70, and stores correction parameters (slope, offset) for the measurement value of the second current measurement circuit 20 calculated by the calculation unit 63.
  • the calculation unit 63 has a calibration mode in which the calculation unit 63 corrects the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 using the measurement value of the first current measurement circuit 10 using the shunt resistor 4 and stores the obtained correction information (correction parameters indicating the slope and offset) in the memory unit 64, and a normal measurement mode in which the calculation unit 63 notifies the correction unit 61 of the stored correction information, thereby enabling correction of the measurement value of the second current measurement circuit 20 and allowing current measurement to be performed.
  • the calculation unit 63 reads from the memory unit 64 the temperature coefficients corresponding to the temperatures of the coreless magnetic sensor 50 and the shunt resistor 4 obtained by the temperature measurement circuit 70, and notifies the correction units 61 and 62, respectively, thereby enabling correction of the temperature dependency of the measurement value of the first current measurement circuit 10 and the measurement value of the second current measurement circuit 20.
  • the correction unit 61 corrects the temperature dependency of the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 based on the temperature coefficient notified by the calculation unit 63, and corrects the measurement value after temperature correction based on the correction information (correction parameters indicating the slope and offset) notified by the calculation unit 63.
  • the correction unit 62 corrects the temperature dependency of the measured value of the first current measurement circuit 10 using the shunt resistor 4 based on the temperature coefficient notified by the calculation unit 63.
  • the comparison unit 65 compares the first measurement value after the measurement value of the first current measurement circuit 10 has been corrected by the correction unit 62 with the second measurement value after the measurement value of the second current measurement circuit 20 has been corrected by the correction unit 61, and notifies the abnormality detection unit 67 of the comparison result.
  • the comparison unit 65 compares the first measurement value after the correction unit 62 has been corrected with respect to the measurement value of the first current measurement circuit 10 using the shunt resistor 4 with the second measurement value after the correction unit 61 has been corrected with respect to the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50, and notifies the abnormality detection unit 67 of the comparison result.
  • the abnormality detection unit 67 If the first measurement value and the second measurement value do not match within a certain range based on the comparison result notified by the comparison unit 65, the abnormality detection unit 67 outputs an abnormality signal indicating this to the data I/F 69. For example, if the notified comparison result indicates that the first measurement value is lower than the second measurement value by more than a certain range, the abnormality detection unit 67 determines that a short mode failure has occurred in the shunt resistor 4, and outputs an abnormality signal indicating this to the data I/F 69.
  • the abnormality detection unit 66 determines whether the second measurement value after correction by the correction unit 61 for the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 exceeds a predetermined normal operating current range (i.e., the range of current that can flow when the device to be measured 3 is operating normally), and if so, outputs an abnormality signal to the data I/F 69 indicating that the current value flowing through the shunt resistor 4 in the device to be measured 3 is abnormally large.
  • a predetermined normal operating current range i.e., the range of current that can flow when the device to be measured 3 is operating normally
  • the abnormality detection unit 68 similarly determines whether the first measurement value after correction by the correction unit 62 for the measurement value of the first current measurement circuit 10 using the shunt resistor 4 exceeds a predetermined normal operating current range, and if so, outputs an abnormality signal to the data I/F 69 indicating that the current value flowing through the shunt resistor 4 in the measurement target device 3 is abnormally large.
  • the data I/F 69 transmits to the host system 90 the first measurement value after the measurement value of the first current measurement circuit 10 has been corrected by the correction unit 62, the second measurement value after the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 has been corrected by the correction unit 61, and the abnormality signals output from the abnormality detection units 66 to 68 in synchronization with the reference clock CK4 from the clock distribution circuit 81.
  • the data I/F 69 uses at least one of the first and second measurement values to determine that the current flowing through the shunt resistor 4 is in a predetermined minute current range in which the second current measurement circuit 20 cannot measure, it discards the measurement value of the second current measurement circuit 20 (i.e., does not notify the host system 90) and outputs only the measurement value of the first current measurement circuit 10 (i.e., notifies the host system 90).
  • FIG. 2A is an external view showing an example of mounting a semiconductor device 30 for measuring current according to an embodiment.
  • an example of mounting a semiconductor device 30 for measuring current realized as a one-chip semiconductor or one semiconductor package on a printed circuit board 31 is shown.
  • a shunt resistor 4 with both ends connected to bus bars 8a and 8b is arranged on the top surface of a printed circuit board 31, a filter circuit 5 (chip resistors 5a and 5b, chip capacitor 6) is provided that is connected to the shunt resistor 4 by a wiring pattern, and a current measuring semiconductor device 30 is mounted on the top surface that is connected to the filter circuit 5 by a wiring pattern.
  • the current measuring semiconductor device 30 has a built-in coreless magnetic sensor 50 and is arranged close to the shunt resistor 4, sandwiching a small filter circuit 5 made of chip components. This allows the magnetic flux generated by the current flowing through the shunt resistor 4 to be detected with high sensitivity by the coreless magnetic sensor 50 built into the current measuring semiconductor device 30. Note that the temperature sensor 75 that detects the temperature of the shunt resistor 4 is not shown in this diagram.
  • FIG. 2B is a diagram showing an example layout of the main circuit elements in a semiconductor device for current measurement 30 according to an embodiment.
  • a diode which is an example of a temperature sensor 74, is placed in contact with or close to a Hall element 51.
  • the forward voltage of a diode such as a Si diode, has a constant negative temperature coefficient, so the temperature can be measured by measuring the voltage across the diode.
  • FIG. 3 is a diagram illustrating the current-voltage characteristics of the shunt resistor 4 provided in the measurement target device 3 and the coreless magnetic sensor 50 provided in the current measurement semiconductor device 30, and the correction in the current measurement semiconductor device 30.
  • the horizontal axis indicates the current flowing through the shunt resistor 4 to be detected, and the vertical axis indicates the output voltage from the shunt resistor 4 and the coreless magnetic sensor 50.
  • the "microcurrent range” indicates the current range that the coreless magnetic sensor 50 cannot detect accurately (the “coreless magnetic sensor dead zone”)
  • the "coreless magnetic sensor effective area” indicates the current range that the coreless magnetic sensor 50 can effectively detect.
  • the "normal operating area” indicates the range of current that can flow when the measurement target device 3 is operating normally (also called the “normal operating current range”), and is used to determine whether or not an abnormality has occurred in the measurement target device 3.
  • the thick solid line shows the current-voltage characteristics of the shunt resistor 4. It shows linearity over a wide current range, including the "normal operating region,” but in extremely large current ranges, it shows saturation characteristics due to the limits of the dynamic range in the measurement circuit.
  • the dashed line and the thin solid line following it show the current-voltage characteristics of the coreless magnetic sensor 50.
  • the dashed line shows the current-voltage characteristics of the coreless magnetic sensor 50 in the "microcurrent region" where the coreless magnetic sensor 50 cannot detect accurately.
  • the dashed line which partially overlaps with the thick solid line, indicates the current-voltage characteristics of the coreless magnetic sensor 50 after correction using the shunt resistor 4.
  • the current-voltage characteristics of the coreless magnetic sensor 50 have a smaller slope than the shunt resistor 4, as shown by the dashed dotted line and the thin solid line following it in this figure, and have an offset in the output voltage when the current value is zero.
  • the calculation unit 63 of the signal processing circuit 60 included in the current measuring semiconductor device 30 records the measured value of the first current measuring circuit 10 using the shunt resistor 4 and the measured value of the second current measuring circuit 20 using the coreless magnetic sensor 50 when the current flowing through the shunt resistor 4 is in the "normal operating region” and in the "coreless magnetic sensor effective region” (at two or more different current values), and calculates the relationship between them using a linear approximation equation or the like, thereby enabling "gain correction” and "offset correction” for the measured value of the second current measuring circuit 20 using the coreless magnetic sensor 50 (i.e., use of the corrected current-voltage characteristics of the coreless magnetic sensor 50 shown by the dashed line that overlaps with the thick solid line in a part of the region).
  • the correction unit 61 of the signal processing circuit 60 can output the corrected measured value of the second current measuring circuit 20 using the coreless magnetic sensor 50 by using the corrected current-voltage characteristics of the coreless magnetic sensor 50.
  • FIG. 4 is a flowchart showing the operation of the semiconductor device 30 for measuring current according to the embodiment. This mainly shows the operation of the correction process by the calculation unit 63 of the signal processing circuit 60 provided in the semiconductor device 30 for measuring current (i.e., the correction of the measurement value of the second current measurement circuit 20 using the measurement value of the first current measurement circuit 10, and the correction of the temperature dependence of the coreless magnetic sensor 50 and the shunt resistor 4).
  • the operation of the current measuring semiconductor device 30 consists of a calibration mode (S10 to S17) followed by a normal measurement mode (S18 to S21).
  • the calibration mode may be performed before the current measuring semiconductor device 30 is manufactured and shipped from the manufacturer, or may be performed during operation after it is shipped.
  • the calculation unit 63 of the signal processing circuit 60 acquires a measurement value from the first current measurement circuit 10 using the shunt resistor 4 (S11).
  • the calculation unit 63 determines whether the acquired measurement value is within the "normal operating range” and the "coreless magnetic sensor effective range” shown in FIG. 3 (S12). If the determination is negative (No in S12), the calculation unit 63 returns to step S11 and repeats the process. If the determination is positive (Yes in S12), the calculation unit 63 further acquires the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 (S13), and stores these measurement values in the memory unit 64 as pre-correction measurement data (S14).
  • the calculation unit 63 determines whether the number of data points required for correction has been acquired (S15), and if the determination is negative (No in S15), the calculation unit 63 returns to step S11 and repeats the process, and if the determination is positive (Yes in S15), the calculation unit 63 uses the pre-correction measurement data stored in the memory unit 64 up to that point to calculate the relationship therebetween using a linear approximation equation or the like, thereby calculating correction parameters (slope, offset) that enable "gain correction” and "offset correction” for the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50, and stores these in the memory unit 64 (S16).
  • correction parameters slope, offset
  • the memory unit 64 previously stores temperature coefficients for correcting the temperature dependence of the coreless magnetic sensor 50 and the shunt resistor 4. Therefore, in the calibration mode in steps S10 to S17, the temperature-corrected measurement values may be used as the measurement values of the first current measurement circuit 10 and the second current measurement circuit 20.
  • the calculation unit 63 of the signal processing circuit 60 first obtains measured values from the first current measurement circuit 10 using the shunt resistor 4 and the second current measurement circuit 20 using the coreless magnetic sensor 50, and obtains the temperatures of the coreless magnetic sensor 50 and the shunt resistor 4 from the temperature measurement circuit 70 (S19).
  • the calculation unit 63 reads out the temperature coefficients corresponding to the acquired temperatures of the coreless magnetic sensor 50 and the shunt resistor 4 from the memory unit 64 and notifies the correction units 61 and 62, respectively, thereby enabling the correction unit 61 to correct the temperature dependency of the measurement value of the second current measurement circuit 20 and the correction unit 62 to correct the temperature dependency of the measurement value of the first current measurement circuit 10; further, the calculation unit 63 reads out the correction information (correction parameters indicating the slope and offset) from the memory unit 64 and notifies the correction unit 61, thereby enabling the correction unit 61 to perform "gain correction” and "offset correction” on the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 (S20).
  • the calculation unit 63 judges whether re-correction is necessary by determining whether a predetermined period of time has passed since the last calibration mode was executed (S21), and if the judgment is affirmative (Yes in S21), the calculation unit 63 returns to the calibration mode (S10 to S17) and repeats the process, and if the judgment is negative (No in S21), the calculation unit 63 returns to the normal measurement mode (S18 to S21) and repeats the process.
  • the current measuring semiconductor device 30 uses the measurement value of the first current measuring circuit 10 to correct the measurement value of the second current measuring circuit 20, and corrects the temperature dependence of the coreless magnetic sensor 50 and the shunt resistor 4, thereby achieving highly accurate current measurement using the redundant current measuring semiconductor device 30 to prevent common cause failures.
  • FIG. 5 is a flowchart showing the operation of detecting an abnormality in the shunt resistor 4 by the semiconductor device 30 for current measurement according to the embodiment. This mainly shows the process of detecting an abnormality in the shunt resistor 4 by the comparison unit 65 and the abnormality detection unit 67 of the signal processing circuit 60 provided in the semiconductor device 30 for current measurement.
  • the comparison unit 65 obtains a first measurement value after the measurement value of the first current measurement circuit 10 using the shunt resistor 4 has been corrected by the correction unit 62, and a second measurement value after the measurement value of the second current measurement circuit 20 using the coreless magnetic sensor 50 has been corrected by the correction unit 61 (S30).
  • the comparison unit 65 determines whether the acquired second measurement value is within a range in which both the coreless magnetic sensor 50 and the shunt resistor 4 indicate a valid measurement current (S31). If the determination is negative (No in S31), the comparison unit 65 returns to step S30 and repeats the process. If the determination is positive (Yes in S31), the comparison unit 65 compares the acquired first and second measurement values and notifies the anomaly detection unit 67 of the comparison result (S32).
  • FIG. 6 is a flowchart showing the operation of detecting an abnormality in the measurement target device 3 by the semiconductor device for current measurement 30 according to the embodiment. This mainly shows the process of detecting an abnormality in the current value in the measurement target device 3 by the abnormality detection units 68 and 66 of the signal processing circuit 60 provided in the semiconductor device for current measurement 30.
  • the anomaly detection units 66 and 68 judge in the affirmative (i.e., both the first and second measured values are within the predetermined normal operating current range) (Yes in S41), they determine that there is no anomaly and return to step S40 to repeat the process, and if they judge in the negative (i.e., at least one of the first and second measured values is not within the predetermined normal operating current range) (No in S41), they generate an anomaly signal indicating that the current value flowing through the shunt resistor 4 in the measurement target device 3 is abnormally large (S42), and notify the higher-level system 90 via the data I/F 69, thereby activating a circuit breaker (not shown) connected in series with the battery pack 3a to cut off the current flowing through the shunt resistor 4.
  • the current measuring semiconductor device 30 compares the first and second measured values with the normal operating current range, thereby detecting that an abnormally large current is flowing in the device to be measured 3, and the safe operation of the device to be measured 3 can be ensured.
  • the current measuring semiconductor device 30 is a device that measures the current flowing through the shunt resistor 4 provided in the device to be measured 3, and includes a first current measuring circuit 10 that measures the current flowing through the shunt resistor 4 by detecting the voltage across the shunt resistor 4, and a second current measuring circuit 20 that has a coreless magnetic sensor 50 and measures the current flowing through the shunt resistor 4 using the coreless magnetic sensor 50.
  • the current measuring semiconductor device 30 is a single semiconductor device that measures the current flowing through the shunt resistor 4, and is equipped with a coreless magnetic sensor 50 that is free of magnetic saturation due to the magnetic core and can measure in a larger current range, and is configured as a single semiconductor that can be placed close to the shunt resistor 4, thereby realizing a current measuring semiconductor device in which common cause failures are suppressed.
  • the current measurement semiconductor device 30 according to Technology 2 further includes a reference clock generation circuit 80 in addition to the current measurement semiconductor device 30 according to Technology 1, and the first current measurement circuit 10 and the second current measurement circuit 20 each have chopping circuits 18a-18f and 28a-28e that operate in synchronization with the reference clock generated by the reference clock generation circuit 80. This suppresses error factors such as offset and 1/f noise that may occur in the first current measurement circuit 10 and the second current measurement circuit 20, achieving highly accurate current measurement.
  • the current measuring semiconductor device 30 further includes temperature sensors 74 and 75 for detecting the temperatures of the coreless magnetic sensor 50 and the shunt resistor 4, and a signal processing circuit 60 for correcting the temperature dependence of the first current measuring circuit 10 and the second current measuring circuit 20 based on the temperatures detected by the temperature sensors 74 and 75. This corrects the temperature dependence of the coreless magnetic sensor 50 and the shunt resistor 4, achieving highly accurate current measurement.
  • the current measuring semiconductor device 30 according to technology 4 is a current measuring semiconductor device 30 according to any one of technologies 1 to 3, further comprising a signal processing circuit 60 that corrects the measurement value of the second current measuring circuit 20 based on the measurement value of the first current measuring circuit 10.
  • the current measurement semiconductor device 30 according to technology 5 is a current measurement semiconductor device 30 according to any one of technologies 1 to 4, in which the signal processing circuit 60 has a calibration mode in which the measurement value of the second current measurement circuit 20 is corrected by the measurement value of the first current measurement circuit 10 and the obtained correction information is stored, and a normal measurement mode in which current is measured by the measurement value of the second current measurement circuit 20 corrected based on the stored correction information, and in the normal measurement mode, the measurement value of the first current measurement circuit 10 is compared with the corrected measurement value of the second current measurement circuit 20 to detect an abnormality in the shunt resistor 4.
  • the measurement value of the second current measurement circuit 20 is corrected using the measurement value of the first current measurement circuit 10, and further, the consistency of the two measurement values is confirmed, and a short mode failure of the shunt resistor 4 can be detected.
  • the signal processing circuit 60 detects that the measurement target device 3 is abnormal when either the measurement value of the first current measuring circuit 10 or the corrected measurement value of the second current measuring circuit 20 exceeds a predetermined normal operating current range. This detects that an abnormally large current is flowing in the measurement target device 3, and the safe operation of the measurement target device 3 can be ensured.
  • the signal processing circuit 60 discards the measurement value of the second current measuring circuit 20 in a predetermined microcurrent region where the second current measuring circuit 20 is unable to measure, and outputs the measurement value of the first current measuring circuit 10.
  • the measurement value of the second current measuring circuit 20 which has low accuracy, is discarded in the microcurrent region, so that only valid measurement values are output in the entire current region.
  • the coreless magnetic sensor 50 may be a Hall element or a magnetic resistance element.
  • the current measuring semiconductor device 30 has been described above based on an embodiment, but the present invention is not limited to this embodiment. As long as it does not deviate from the gist of the present invention, various modifications conceivable by a person skilled in the art to this embodiment and other forms constructed by combining some of the components in the embodiment are also included within the scope of this disclosure.
  • a Hall element 51 is used as the coreless magnetic sensor 50, but this is not limited thereto.
  • a highly sensitive MR (Magneto Resistive) element or a GMR (Giant Magneto Resistive) element may be formed on the substrate surface of the current measuring semiconductor device 30 using thin film formation technology.
  • the temperature sensor 75 that detects the temperature of the shunt resistor 4 is provided outside the one-chip semiconductor or semiconductor package that constitutes the semiconductor device for current measurement 30, but this is not limited to the above form, and the temperature sensor 75 may be provided inside the one-chip semiconductor or semiconductor package that constitutes the semiconductor device for current measurement 30.
  • the filter circuit 5 is mounted on the printed circuit board 31 as a circuit separate from the semiconductor device 30 for current measurement, but this is not limited to the above embodiment, and the filter circuit 5 may be incorporated into the semiconductor device 30 for current measurement as a circuit included in the semiconductor device 30 for current measurement.
  • the shunt resistor 4 is provided in the measurement target device 3, but this is not limited to the above, and the shunt resistor 4 may be a circuit element provided in the current measurement semiconductor device 30.
  • the present invention can be realized not only as a semiconductor device for measuring current, but also as a method (for example, a method for correcting the temperature dependence of the first current measurement circuit and the second current measurement circuit, a method for detecting an abnormality in a shunt resistor) related to processing by a signal processing circuit included in the semiconductor device for measuring current (processing shown in the flowcharts of Figures 4 to 6), as a program for causing a processor to execute the method, as a computer-readable recording medium on which the program is recorded, or as a program product including the program.
  • a method for example, a method for correcting the temperature dependence of the first current measurement circuit and the second current measurement circuit, a method for detecting an abnormality in a shunt resistor related to processing by a signal processing circuit included in the semiconductor device for measuring current (processing shown in the flowcharts of Figures 4 to 6), as a program for causing a processor to execute the method, as a computer-readable recording medium on which the program is recorded, or as
  • the present invention uses a current measurement circuit that measures current using a shunt resistor, which is capable of measuring with high accuracy and a high dynamic range, primarily in measuring lithium-ion battery current for electric vehicles, as a current measurement semiconductor device that measures the current flowing through a shunt resistor provided in the device to be measured, and makes it possible to easily achieve redundancy using a coreless magnetic sensor that suppresses common cause failures in terms of functional safety.
  • High-accuracy current measurement using a shunt resistor makes it possible to calculate the SOC and SOH (State of Health) of lithium-ion batteries for electric vehicles with high accuracy, thereby making it possible to extend the driving range of electric vehicles.
  • Measurement target device 3 Battery pack 4 Shunt resistor 5 Filter circuit 5a, 5b Chip resistor 6 Chip capacitor 8a, 8b Bus bar 10 First current measurement circuit 10a, 10b Input terminal 11, 21 Variable gain amplifier (VGA) 12, 22, 72 Analog-to-digital converter (ADC) 13, 23, 73 Filter Reference Signs List 18a to 18f, 28a to 28e, 78a to 78g Chopping circuit 20 Second current measurement circuit 30 Semiconductor device for current measurement 31 Printed circuit board 50 Coreless magnetic sensor 51 Hall element 52 Current source 53 Switch circuit 60 Signal processing circuit 61, 62 Correction unit 63 Calculation unit 64 Storage unit 65 Comparison unit 66 to 68 Abnormality detection unit 69 Data I/F (interface) 70 Temperature measurement circuit 71 Amplifier (Amp) 74, 75 Temperature sensor 76 Multiplexer (MUX) 80 Reference clock generating circuit 81 Clock distribution circuit 90 Upper system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

Un dispositif à semi-conducteur d'utilisation de mesure de courant (30) est destiné à mesurer le courant qui circule à travers une résistance de dérivation (4) disposée dans un dispositif cible de mesure (3), et comprend : un premier circuit de mesure de courant (10) qui mesure le courant circulant à travers la résistance de dérivation (4) par détection de tension aux deux extrémités de la résistance de dérivation (4) ; et un second circuit de mesure de courant (20) qui comporte un capteur magnétique sans noyau (50) et mesure le courant circulant à travers la résistance de dérivation (4) à l'aide du capteur magnétique sans noyau (50).
PCT/JP2024/041234 2023-12-11 2024-11-21 Dispositif à semi-conducteur d'utilisation de mesure de courant Pending WO2025126792A1 (fr)

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JP2023-208792 2023-12-11
JP2023208792 2023-12-11

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WO2025126792A1 true WO2025126792A1 (fr) 2025-06-19

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014102095A (ja) * 2012-11-16 2014-06-05 Asahi Kasei Electronics Co Ltd センサ閾値決定回路
JP2015505040A (ja) * 2011-12-16 2015-02-16 ローベルト ボッシュ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電流測定回路、バッテリ、及び車両
KR101687384B1 (ko) * 2016-06-24 2016-12-16 태성전장주식회사 전류 센서를 포함한 대전류용 피씨비 어셈블리
WO2018168981A1 (fr) * 2017-03-17 2018-09-20 三洋電機株式会社 Détecteur de courant
JP2019536052A (ja) * 2016-12-02 2019-12-12 シーエムアール サージカル リミテッドＣｍｒ Ｓｕｒｇｉｃａｌ Ｌｉｍｉｔｅｄ モータ電流感知
WO2020066260A1 (fr) * 2018-09-27 2020-04-02 三洋電機株式会社 Système d'alimentation électrique et dispositif de gestion
JP2021055999A (ja) * 2018-01-15 2021-04-08 パナソニックＩｐマネジメント株式会社 磁気センサ
KR102532430B1 (ko) * 2022-11-21 2023-05-15 스마트전자 주식회사 버스바조립체 및 전류측정장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015505040A (ja) * 2011-12-16 2015-02-16 ローベルト ボッシュ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電流測定回路、バッテリ、及び車両
JP2014102095A (ja) * 2012-11-16 2014-06-05 Asahi Kasei Electronics Co Ltd センサ閾値決定回路
KR101687384B1 (ko) * 2016-06-24 2016-12-16 태성전장주식회사 전류 센서를 포함한 대전류용 피씨비 어셈블리
JP2019536052A (ja) * 2016-12-02 2019-12-12 シーエムアール サージカル リミテッドＣｍｒ Ｓｕｒｇｉｃａｌ Ｌｉｍｉｔｅｄ モータ電流感知
WO2018168981A1 (fr) * 2017-03-17 2018-09-20 三洋電機株式会社 Détecteur de courant
JP2021055999A (ja) * 2018-01-15 2021-04-08 パナソニックＩｐマネジメント株式会社 磁気センサ
WO2020066260A1 (fr) * 2018-09-27 2020-04-02 三洋電機株式会社 Système d'alimentation électrique et dispositif de gestion
KR102532430B1 (ko) * 2022-11-21 2023-05-15 스마트전자 주식회사 버스바조립체 및 전류측정장치

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