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WO2025126434A1 - Liquide de polissage cmp et procédé de polissage - Google Patents

Liquide de polissage cmp et procédé de polissage Download PDF

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Publication number
WO2025126434A1
WO2025126434A1 PCT/JP2023/044912 JP2023044912W WO2025126434A1 WO 2025126434 A1 WO2025126434 A1 WO 2025126434A1 JP 2023044912 W JP2023044912 W JP 2023044912W WO 2025126434 A1 WO2025126434 A1 WO 2025126434A1
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Prior art keywords
mass
polishing
polishing liquid
content
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PCT/JP2023/044912
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English (en)
Japanese (ja)
Inventor
雅博 菅野
宏 中川
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Resonac Corp
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Resonac Corp
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Priority to PCT/JP2023/044912 priority Critical patent/WO2025126434A1/fr
Priority to PCT/JP2024/043899 priority patent/WO2025127083A1/fr
Priority to TW113148355A priority patent/TW202523793A/zh
Publication of WO2025126434A1 publication Critical patent/WO2025126434A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • This disclosure relates to CMP polishing fluids, polishing methods, etc.
  • CMP chemical mechanical polishing
  • Patent Document 1 describes a polishing composition that contains at least one type of abrasive grains with a modified Mohs hardness of 13 or more as a polishing liquid that can maintain high flatness of a polyimide film in a short time and suppress the occurrence of polishing scratches.
  • the polishing may be divided into a rough polishing process in which the carbon material is polished at a high polishing rate, and a finish polishing process in which the carbon material is polished at a lower polishing rate than the rough polishing process in order to adjust the carbon material to an appropriate thickness.
  • polishing the carbon material at a high polishing rate using abrasive grains not only makes the surface of the carbon material more susceptible to polishing scratches, but can also cause defects in the wafer due to abrasive grain residue.
  • conventional polishing solutions if the abrasive grain content is reduced too much, it is difficult to polish the carbon material at a sufficient polishing rate.
  • one aspect of the present disclosure aims to provide a CMP polishing liquid that does not contain abrasive grains or has a low abrasive grain content (e.g., 5 mass % or less based on the total mass of the polishing liquid) and that can polish carbon materials at an excellent polishing rate.
  • Another aspect of the present disclosure aims to provide a polishing method using such a CMP polishing liquid.
  • the present disclosure includes, for example, the following [1] to [16].
  • [1] A CMP polishing liquid for polishing a workpiece containing 0 to 5 mass % of abrasive grains and a carbon material, A CMP polishing solution containing iron ions.
  • [2] The CMP polishing liquid according to [1], wherein the content of the iron ions is 0.001 to 0.2 mass%.
  • [3] The CMP polishing liquid according to [1] or [2], wherein the content of the abrasive grains is 0 to 0.01 mass %.
  • [4] The CMP polishing liquid according to any one of [1] to [3], further comprising an oxidizing agent.
  • the metal material contains at least one selected from the group consisting of copper, a copper alloy, an oxide of copper, and an oxide of a copper alloy.
  • the numerical range indicated using “ ⁇ ” indicates a range including the numerical values described before and after “ ⁇ ” as the minimum and maximum values, respectively.
  • “A or more” in the numerical range means A and a range exceeding A.
  • “A or less” in the numerical range means A and a range less than A.
  • the upper limit or lower limit of a numerical range of a certain stage can be arbitrarily combined with the upper limit or lower limit of a numerical range of another stage.
  • the upper limit or lower limit of the numerical range may be replaced with a value shown in the examples.
  • “A or B” may include either A or B, or may include both.
  • the CMP polishing liquid according to this embodiment is a polishing liquid for polishing carbon materials (polishing liquid for carbon materials) and can be used to polish a surface to be polished that includes a carbon material.
  • the carbon material is a carbon-containing material that includes carbon atoms.
  • As the carbon material a material in which the carbon atoms are 1/3 or more based on the total atoms constituting the carbon material (the carbon atom content is 33 atm% or more based on the total amount of atoms constituting the carbon material) can be used.
  • the carbon material resin materials such as polyimide resin, epoxy resin, acrylic resin (polymer having a structural unit derived from a monomer having a (meth)acryloyl group), polybenzoxazole resin, phenolic resin, etc.; amorphous carbon (diamond-like carbon (DLC)), etc. can be mentioned.
  • the carbon material may include at least one selected from the group consisting of polyimide resin, epoxy resin, acrylic resin, polybenzoxazole resin, phenolic resin, and amorphous carbon.
  • the carbon material can have a carbon-carbon bond.
  • the carbon material may be a photosensitive resin or a non-photosensitive resin (a resin that does not have photosensitivity).
  • Polyimide resin has excellent electrical insulation properties and can be used as an insulating layer between different metal layers or wiring.
  • Methods for producing polyimide resin films include forming a thin film of a polyimide solution by spin coating, dip coating, spray coating, etc., and then forming a polyimide resin film by heating and/or irradiating it with light.
  • the polishing liquid according to this embodiment has an abrasive grain content of 0 to 5 mass % (5 mass % or less) and contains at least iron ions.
  • the polishing liquid according to this embodiment can polish carbon materials at an excellent polishing rate.
  • the polishing liquid according to this embodiment can achieve a polishing rate of, for example, 100 nm/min or more in the evaluation described in the examples below.
  • the polishing liquid according to this embodiment contains iron ions.
  • the iron ions may contain at least one type selected from the group consisting of Fe 2+ and Fe 3+ ions.
  • a polishing liquid containing iron ions By obtaining a polishing liquid using an iron ion supplying agent, a polishing liquid containing iron ions can be obtained.
  • the polishing liquid according to this embodiment may contain an iron ion supplying agent.
  • the iron ion supplying agent supplies iron ions to the polishing liquid.
  • the iron ion supplying agent examples include salts of iron ions and hydrates of the salts.
  • the salts of iron ions may include at least one selected from the group consisting of inorganic salts and organic salts.
  • inorganic salts include iron nitrate, iron sulfate, iron boride, iron chloride, iron bromide, iron iodide, iron phosphate, iron fluoride, etc.
  • organic salts include iron triformate, iron diformate, iron acetate, iron propionate, iron oxalate, iron malonate, iron succinate, iron malate, iron glutarate, iron tartrate, iron lactate, iron citrate, etc.
  • the salts of iron ions may include ligands such as ammonium and water.
  • the iron ion supplying agent may be present in a state dissociated into iron ions and anions derived from the iron ion supplying agent.
  • the polishing liquid according to this embodiment may contain at least one selected from the group consisting of nitrate ions and acetate ions from the viewpoint of easily polishing carbon materials at an excellent polishing rate.
  • the polishing liquid according to this embodiment may contain at least one selected from the group consisting of iron nitrate, iron nitrate hydrate, and iron acetate from the viewpoint of easily polishing carbon materials at an excellent polishing rate, relatively little contamination of the polishing apparatus, substrate, etc., and inexpensive and easy to obtain.
  • the iron ion content may be within the following ranges based on the total mass of the polishing liquid. From the viewpoint of easily polishing carbon materials at an excellent polishing rate, the iron ion content is 0.0001 mass% or more, 0.0005 mass% or more, 0.001 mass% or more, 0.0012 mass% or more, 0.0014 mass% or more, 0.002 mass% or more, 0.003 mass% or more, 0.004 mass% or more, 0.005 mass% or more, 0.0055 mass% or more, 0.006 mass% or more, 0.007 mass% or more.
  • 0.008% by mass or more 0.009% by mass or more, 0.01% by mass or more, more than 0.01% by mass, 0.011% by mass or more, 0.02% by mass or more, 0.03% by mass or more, 0.04% by mass or more, It may be 0.05% by mass or more, 0.06% by mass or more, 0.07% by mass or more, 0.08% by mass or more, 0.09% by mass or more, 0.1% by mass or more, more than 0.1% by mass, or 0.11% by mass or more.
  • the content of iron ions is 10% by mass or less, 8% by mass or less, 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, less than 1% by mass, 0.9 mass%.
  • % by mass or less 0.8% by mass or less, 0.7% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, 0.15% by mass or less, 0 12% by mass or less, 0.1% by mass or less, less than 0.1% by mass, 0.09% by mass or less, 0.08% by mass or less, 0.07% by mass or less, 0.06% by mass or less, 0.05% by mass or less. 0.04% by mass or less, 0.03% by mass or less, 0.02% by mass or less, 0.015% by mass or less, 0.012% by mass or less, 0.01% by mass or less, or less than 0.01% by mass.
  • the iron ion content may be 0.0001 to 10 mass%, 0.0001 to 5 mass%, 0.0001 to 1 mass%, 0.0005 to 0.5 mass%, 0.001 to 0.2 mass%, or 0.0014 to 0.12 mass%.
  • the content of the iron ion supplying agent may be adjusted so that the iron ion content in the polishing liquid falls within the above-mentioned ranges.
  • a specific gravity of 1 may be adopted for the polishing liquid.
  • An iron ion content of 0.001 to 10 mass% can be converted to 0.018 to 179 mM.
  • the polishing liquid according to this embodiment contains abrasive grains as an optional component. That is, the polishing liquid may or may not contain abrasive grains.
  • Abrasive grains include silica particles, aluminum oxide (alumina) particles, silicon nitride particles, zirconium oxide (zirconia: yttria-added zirconia particles, etc.) particles, titanium oxide (titania) particles, yttrium oxide (yttria) particles, silicon carbide particles, diamond particles, polymer particles, etc.
  • silica particles When silica particles are included as abrasive grains, examples of the silica particles include colloidal silica, amorphous silica, crystalline silica, fused silica, spherical silica, synthetic silica, hollow silica, etc.
  • colloidal silica When the polishing liquid contains abrasive grains, colloidal silica may be included as abrasive grains from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate, and from the viewpoint of preventing defects such as scratches from occurring on the surface of the object to be polished after polishing, and of easily improving the flatness of the surface to be polished.
  • the average particle size of the abrasive grains may be 10 nm or more, 15 nm or more, 20 nm or more, 25 nm or more, 30 nm or more, 35 nm or more, 40 nm or more, 45 nm or more, 50 nm or more, 55 nm or more, or 60 nm or more, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate because the physical polishing ability per abrasive grain is easily ensured.
  • the average particle size of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 400 nm or less, 300 nm or less, 200 nm or less, 190 nm or less, 180 nm or less, 150 nm or less, 120 nm or less, 100 nm or less, 80 nm or less, or 70 nm or less, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate because the number of abrasive grains per unit area in contact with the polished surface is easily ensured.
  • the average particle size of the abrasive grains may be 10-1000 nm, 10-600 nm, 10-200 nm, 10-100 nm, 10-80 nm, 15-190 nm, 20-180 nm, 30-100 nm, 30-200 nm, 30-80 nm, 50-200 nm, 50-100 nm, or 50-80 nm.
  • the “average particle size” is the secondary particle size of the abrasive grains, and can be obtained by measuring the particle size of the abrasive grains in the polishing liquid, or the particle size of the abrasive grains before being mixed into the polishing liquid.
  • the average particle size can be measured using a light diffraction scattering type particle size distribution analyzer, and a sample in which the abrasive grains are dispersed in water may be prepared and measured.
  • the measurement is performed under the following conditions: measurement temperature: 20°C, solvent refractive index: 1.333 (water), particle refractive index: Unknown (setting), solvent viscosity: 1.005 cp (water), run time: 200 seconds, laser incidence angle: 90°, intensity (corresponding to scattering intensity, turbidity): 5E+04 to 4E+05, and if the intensity is higher than 4E+05, it can be diluted with water and measured. Colloidal particles are usually obtained in a dispersed state in water, so they can be appropriately diluted and measured so that the scattering intensity falls within the range mentioned above.
  • the content of silica particles in the abrasive grains may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more based on the total mass of the abrasive grains (all the abrasive grains contained in the polishing liquid), from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the abrasive grains may be made of silica particles (substantially 100% by mass of the abrasive grains contained in the polishing liquid are silica particles).
  • the polishing liquid according to this embodiment may not contain zirconia particles, and the abrasive grains may not contain zirconia.
  • the content of zirconia particles may be 0.01% by mass or less, less than 0.01% by mass, 0.001% by mass or less, or 0.0001% by mass or less, based on the total mass of the polishing liquid.
  • the content of the abrasive grains is 0 to 5 mass% based on the total mass of the polishing liquid.
  • the content of the abrasive grains may be 0 to 4 mass%, 0 to 3 mass%, 0 to 2 mass%, 0 to 1 mass%, 0 mass% or more but less than 1 mass%, 0 to 0.5 mass%, 0 to 0.1 mass%, 0 mass% or more but less than 0.1 mass%, 0 to 0.05 mass%, 0 to 0.01 mass%, 0 mass% or more but less than 0.01 mass%, 0 to 0.005 mass%, 0 to 0.001 mass%, or 0 mass% or more but less than 0.001 mass%, based on the total mass of the polishing liquid, from the viewpoints that the amount of abrasive grains per unit area of the polished surface is reduced, which makes it easier for iron ions to come into preferential contact with the polished surface and promotes the modification of the carbon material, making it easier to polish the carbon material at an excellent polish
  • the mass ratio of the abrasive grain content to the iron ion content may be 0-500, 0-450, 0-400, 0-350, 0-300, 0-250, 0-200, 0-150, 0-100, 0-50, 0-30, 0-10, 0-5, or 0-1, from the viewpoint that the amount of abrasive grains per unit area of the polished surface is reduced, making it easier for the iron ions to come into preferential contact with the polished surface and promoting the modification of the carbon material, making it easier to polish the carbon material at a high polishing rate, and from the viewpoint that it is easier to suppress the occurrence of scratches.
  • the polishing liquid according to this embodiment may contain an organic acid component.
  • the organic acid component include organic acids and their salts (e.g., alkali metal salts such as sodium salts; alkaline earth metal salts such as calcium salts).
  • alkali metal salts such as sodium salts
  • alkaline earth metal salts such as calcium salts.
  • the polishing liquid according to this embodiment can contain an oxidizing agent such as hydrogen peroxide, as described below.
  • an oxidizing agent such as hydrogen peroxide, as described below.
  • the interaction between the iron ions and the oxidizing agent can cause the decomposition of the oxidizing agent to proceed, potentially compromising the storage stability of the polishing liquid.
  • such decomposition of the oxidizing agent can be suppressed by using an organic acid component.
  • dissociation means that a cation (e.g., a proton (H + )) is separated from at least one acid group (e.g., a carboxy group (-COOH)) of the organic acid component in the polishing liquid, and the acid group exists in the form of an anionic group (e.g., -COO - ).
  • the organic acid may include saturated fatty acids such as formic acid, acetic acid, and propionic acid; dicarboxylic acids such as malonic acid, succinic acid, glutaric acid, and adipic acid; hydroxy acids such as malic acid and citric acid; and amino acids as described below.
  • the organic acid may or may not contain malic acid.
  • the polishing liquid may contain at least one amino acid component (excluding compounds containing iron ions or compounds that are oxidizing agents) selected from the group consisting of amino acids and amino acid derivatives, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • An amino acid is a compound that has both amino and carboxyl functional groups. Examples of amino acid derivatives include amino acid esters, amino acid salts, and peptides.
  • the amino acid component can be used as a pH adjuster for adjusting the pH of the polishing liquid.
  • Amino acid components include glycine, ⁇ -alanine, ⁇ -alanine (also known as 3-aminopropanoic acid), 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, alloisoleucine, phenylalanine, proline, sarcosine, ornithine, lysine, serine, threonine, allothreonine, homoserine, tyrosine, 3,5-diiodo-tyrosine, ⁇ -(3,4-dihydroxyphenyl)-alanine, thyroxine, 4-hydroxy-proline, cysteine, methionine, ethionine, lanthionine, cystathionine, cystine, and cystathionine.
  • amino acid components include glycine, aspartic acid, glutamic acid, S-(carboxymethyl)-cysteine, 4-aminobutyric acid, asparagine, glutamine, azaserine, arginine, canavanine, citrulline, ⁇ -hydroxy-lysine, creatine, kynurenine, histidine, 1-methyl-histidine, 3-methyl-histidine, ergothioneine, tryptophan, glycylglycine, glycylglycylglycine, vasopressin, oxytocin, cassinin, eledoisin, glucagon, secretin, proopiomelanocortin, enkephalin, and prodynorphin.
  • the amino acid component may contain at least one selected from the group consisting of glycine and ⁇ -alanine, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the content of glycine in the organic acid or amino acid may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more based on the total mass of the organic acid or amino acid (total amino acids contained in the polishing liquid), from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the organic acid or amino acid may be composed of glycine (substantially 100% by mass of the organic acid or amino acid contained in the polishing liquid is glycine).
  • the content of the organic acid component may be in the following ranges based on the total mass of the polishing liquid.
  • the content of the organic acid component may be 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.5 mass% or more, 1 mass% or more, 1.5 mass% or more, 2 mass% or more, 2.5 mass% or more, or 3 mass% or more.
  • the content of the organic acid component may be 10 mass% or less, 5 mass% or less, 3 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.5 mass% or less, or 0.3 mass% or less.
  • the content of the organic acid component may be 0.01 to 10% by mass, 0.01 to 5% by mass, 0.01 to 3% by mass, 0.05 to 10% by mass, 0.05 to 5% by mass, 0.05 to 3% by mass, 0.1 to 10% by mass, 0.1 to 5% by mass, or 0.1 to 3% by mass.
  • the content of the amino acid component may be within the above-mentioned range.
  • the mass ratio of the organic acid component content to the abrasive grain content may be within the following ranges from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the mass ratio may be 0-10, 0-5, 0-2, 0-1.5, 0-1, 0-0.5, 0-0.1, 0-0.05, or 0-0.01.
  • the mass ratio of the amino acid component content to the abrasive grain content may be within the above-mentioned ranges.
  • the mass ratio of the organic acid component content to the iron ion content may be in the following ranges from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the mass ratio may be 0.1 or more, 0.5 or more, 1 or more, 2 or more, 10 or more, 50 or more, 100 or more, 150 or more, 200 or more, or 250 or more.
  • the mass ratio may be 3000 or less, 2500 or less, 2200 or less, 2000 or less, 1500 or less, 1000 or less, 800 or less, 600 or less, 400 or less, or 300 or less.
  • the mass ratio may be 0.1 to 3000, 0.1 to 2000, 0.1 to 500, 1 to 3000, 1 to 2000, 1 to 500, 2 to 3000, 2 to 2000, or 2 to 500.
  • the mass ratio of the amino acid component content to the iron ion content may be within the above-mentioned range.
  • the polishing liquid according to this embodiment may contain an oxidizing agent (an oxidizing agent for carbon materials; excluding compounds that fall under the category of iron ions or compounds containing iron ions).
  • an oxidizing agent an oxidizing agent for carbon materials; excluding compounds that fall under the category of iron ions or compounds containing iron ions.
  • Oxidizing agents include hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid, ozone water, and the like.
  • the oxidizing agent may contain an oxidizing agent that does not contain non-volatile components, from the viewpoint of avoiding contamination by alkali metals, alkaline earth metals, halides, and the like, and may contain hydrogen peroxide.
  • the oxidizing agent may contain a peroxide, from the viewpoint of facilitating polishing of carbon materials and metal materials at an excellent polishing rate, and may contain hydrogen peroxide.
  • As the oxidizing agent a compound with a weaker redox potential than that of iron ions can be used.
  • the content of the oxidizing agent may be within the following ranges based on the total mass of the polishing liquid. From the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate, the content of the oxidizing agent may be 0.1 mass% or more, 0.5 mass% or more, 1 mass% or more, 1.5 mass% or more, 1.7 mass% or more, 2 mass% or more, 2.5 mass% or more, 3 mass% or more, 3.5 mass% or more, or 4 mass% or more. The content of the oxidizing agent may be 20 mass% or less, 15 mass% or less, 10 mass% or less, 8 mass% or less, 6 mass% or less, 5 mass% or less, 4.5 mass% or less, or 4 mass% or less.
  • the mass ratio of the abrasive content to the oxidizer content may be within the following ranges, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the mass ratio may be 0 to 10, 0 to 5, 0 to 3, 0 to 2, 0 to 1.5, 0 to 1, 0 to 0.5, or 0 to 0.3.
  • the mass ratio of the oxidizing agent content to the iron ion content may be in the following ranges. From the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate, the mass ratio may be 10 or more, 50 or more, 100 or more, 200 or more, 300 or more, or 350 or more. From the viewpoint of easily polishing carbon materials at an excellent polishing rate, the mass ratio may be 3000 or less, 2500 or less, 2000 or less, 1500 or less, 1000 or less, 800 or less, 600 or less, 500 or less, 400 or less, or 370 or less. From these perspectives, the mass ratio may be 10 to 3000, 10 to 2000, 10 to 500, 100 to 3000, 100 to 2000, 100 to 500, 200 to 3000, 200 to 2000, 200 to 500, 300 to 3000, 300 to 2000, or 300 to 500.
  • glycol monoethers e.g., glycol monoalkyl ethers
  • glycol monoethers such as ethylene glycol monopropyl ether, propylene glycol monopropyl ether, diethylene glycol monopropyl ether, dipropylene glycol monopropyl ether, triethylene glycol monopropyl ether, tripropylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monobutyl ether, diethylene glycol monobutyl ether, dipropylene glycol monobutyl ether, triethylene glycol monobutyl ether, and tripropylene glycol monobutyl ether; ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, tripropylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol diethyl ether
  • the content of the organic solvent may be within the following ranges based on the total mass of the polishing liquid. From the viewpoint of easily obtaining sufficient wettability of the polishing liquid to the substrate and easily improving the polishing rate of the hydrophobic carbon material, the content of the organic solvent may be 0.1 mass% or more, 0.2 mass% or more, 0.5 mass% or more, 1 mass% or more, 2 mass% or more, 2.5 mass% or more, or 3 mass% or more.
  • the content of the organic solvent may be 95 mass% or less, 50 mass% or less, 30 mass% or less, 10 mass% or less, 8 mass% or less, 6 mass% or less, 5 mass% or less, 4 mass% or less, or 3 mass% or less. From these viewpoints, the content of the organic solvent may be 0.1 to 95% by mass, 0.1 to 50% by mass, 0.1 to 5% by mass, 1 to 95% by mass, 1 to 50% by mass, 1 to 5% by mass, 2 to 95% by mass, 2 to 50% by mass, or 2 to 5% by mass.
  • the polishing liquid according to this embodiment may contain additives other than the above-mentioned components.
  • additives include pH adjusters, polymeric materials, etc.
  • the polishing liquid according to this embodiment may contain a base component as a pH adjuster.
  • base components include sodium hydroxide, ammonia (e.g., aqueous ammonia), potassium hydroxide, calcium hydroxide, etc.
  • the polishing liquid according to this embodiment may contain water.
  • the water content in the polishing liquid may be the remainder obtained by subtracting the contents of other contained components from the total amount of the polishing liquid.
  • the water content may be 50 mass% or more, 70 mass% or more, 80 mass% or more, or 90 mass% or more based on the total mass of the polishing liquid.
  • the polishing liquid according to this embodiment may be stored as a stock liquid for the polishing liquid having a lower water content than at the time of polishing. In this case, the polishing liquid can be obtained by diluting the stock liquid for the polishing liquid with water at the time of polishing.
  • the pH of the polishing liquid according to this embodiment may be 7.0 or less, less than 7.0, 6.5 or less, 6 or less, 5.5 or less, 5.2 or less, 5.0 or less, 4.8 or less, 4.6 or less, 4.5 or less, 4.4 or less, or 4.3 or less, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the pH of the polishing liquid may be 1.0 or more, 1.2 or more, 1.5 or more, 2 or more, 2.2 or more, 2.4 or more, 2.6 or more, 2.8 or more, 3 or more, 3.2 or more, 3.4 or more, 3.6 or more, 3.8 or more, 4.0 or more, 4.1 or more, or 4.2 or more, from the viewpoint of easily polishing carbon materials and metal materials at an excellent polishing rate.
  • the pH of the polishing liquid may be 1.0 to 7.0, 1.0 to 6.0, 1.0 to 5.0, 1.0 to 4.5, 2.0 to 7.0, 2.0 to 6.0, 2.0 to 5.0, 2.0 to 4.5, 3.0 to 7.0, 3.0 to 6.0, 3.0 to 5.0, or 3.0 to 4.5.
  • the pH of the polishing liquid is defined as the pH at a liquid temperature of 25°C.
  • the pH of the polishing solution according to this embodiment can be measured with a pH meter (e.g., Model (F-51) manufactured by Horiba, Ltd.).
  • a pH meter e.g., Model (F-51) manufactured by Horiba, Ltd.
  • a phthalate pH standard solution pH: 4.01
  • a neutral phosphate pH standard solution pH: 6.86
  • a borate pH standard solution pH: 9.18
  • the liquid temperatures of the calibration solutions and the polishing solution are set to 25°C.
  • the polishing method includes a polishing step of polishing a carbon material using the polishing liquid according to this embodiment.
  • a surface to be polished containing a carbon material may be polished using the polishing liquid according to this embodiment, and the surface to be polished of a material to be polished containing a carbon material may be polished.
  • a surface to be polished of a hard mask containing a carbon material may be polished using the polishing liquid according to this embodiment.
  • a surface to be polished containing a metal material may be polished using the polishing liquid according to this embodiment, and the surface to be polished of a material to be polished containing a metal material may be polished.
  • the polishing liquid used in the polishing step may be a polishing liquid obtained by diluting a stock liquid for the polishing liquid with water.
  • the surface to be polished may have a layer containing at least one material selected from the group consisting of carbon materials and metal materials.
  • the surface to be polished of the substrate is pressed against the polishing cloth of the polishing table, and a predetermined pressure is applied to the substrate from the side of the substrate opposite the surface to be polished (the back surface of the substrate).
  • the polishing liquid according to this embodiment is supplied between the surface to be polished of the substrate and the polishing cloth, and the substrate is moved relative to the polishing table to polish the surface to be polished.
  • the pressure of the substrate (such as a semiconductor substrate) having a surface to be polished against the polishing cloth may be 1 to 100 kPa, or 5 to 50 kPa, from the viewpoint of easily satisfying the uniformity of the polishing rate within the surface to be polished and the flatness of the pattern.
  • a polishing liquid can be continuously supplied to the polishing cloth by a pump or the like. There is no limitation on the amount of supply, but the surface of the polishing cloth may be constantly covered with the polishing liquid.
  • a conditioning step of the polishing cloth may be performed before polishing.
  • the polishing cloth may be conditioned with a liquid containing at least water using a dresser with diamond particles.
  • a substrate cleaning step may be further performed. After polishing, the substrate may be thoroughly washed in running water, and then dried using a spin dry or the like to remove water droplets adhering to the substrate.
  • the substrate may be dried after performing a known cleaning method (for example, a method in which a commercially available cleaning liquid is run over the substrate surface while a polyurethane brush is rotated and pressed against the substrate with a constant pressure to remove deposits on the substrate).
  • a known cleaning method for example, a method in which a commercially available cleaning liquid is run over the substrate surface while a polyurethane brush is rotated and pressed against the substrate with a constant pressure to remove deposits on the substrate.
  • the method for manufacturing a part according to the present embodiment includes a part fabrication step in which a part is obtained using a polished member (a polished member containing a carbon material and/or a metal material) polished by the polishing method according to the present embodiment.
  • the polished member (a polished member containing a carbon material) polished by the polishing method according to the present embodiment may be used as a hard mask.
  • the part according to the present embodiment is a part obtained by the method for manufacturing a part according to the present embodiment.
  • the part according to the present embodiment is not particularly limited, and may be an electronic part (e.g., a semiconductor part such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip).
  • the method for manufacturing an electronic part according to the present embodiment uses a polished member polished by the polishing method according to the present embodiment to obtain an electronic part.
  • the method for manufacturing a semiconductor part according to the present embodiment uses a polished member polished by the polishing method according to the present embodiment to obtain a semiconductor part (e.g., a semiconductor package) using a polished member polished by the polishing method according to the present embodiment.
  • the method for manufacturing a part according to the present embodiment may include a polishing step in which a polished member is polished by the polishing method according to the present embodiment before the part fabrication step.
  • the manufacturing method for a component according to the present embodiment may include, as one aspect of a component manufacturing process, a singulation process for singulating a polished member (a polished member containing a carbon material and/or a metal material) polished by the polishing method according to the present embodiment.
  • the singulation process may be, for example, a process for dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to the present embodiment to obtain chips (e.g., semiconductor chips).
  • the manufacturing method for an electronic component according to the present embodiment may include a process for singulating a polished member polished by the polishing method according to the present embodiment to obtain electronic components (e.g., semiconductor components).
  • the manufacturing method for a semiconductor component according to the present embodiment may include a process for singulating a polished member polished by the polishing method according to the present embodiment to obtain semiconductor components (e.g., semiconductor packages).
  • the manufacturing method of the part according to the present embodiment may include, as one aspect of the part manufacturing process, a connection process for connecting (e.g., electrically connecting) a polished member polished by the polishing method according to the present embodiment (a polished member containing a carbon material and/or a metal material) to another connected body.
  • the connected body to be connected to the polished member polished by the polishing method according to the present embodiment is not particularly limited, and may be a polished member polished by the polishing method according to the present embodiment, or may be a connected body different from the polished member polished by the polishing method according to the present embodiment.
  • the polished member and the connected body may be directly connected (connected in a state where the polished member and the connected body are in contact with each other), or the polished member and the connected body may be connected via another member (such as a conductive member).
  • the connection process may be performed before the singulation process, after the singulation process, or before or after the singulation process.
  • the connecting step may be a step of connecting the polished surface of the polished member polished by the polishing method according to this embodiment to the connected body, or a step of connecting the connecting surface of the polished member polished by the polishing method according to this embodiment to the connecting surface of the connected body.
  • the connecting surface of the polished member may be the polished surface polished by the polishing method according to this embodiment.
  • the connecting step can obtain a connecting body including the polished member and the connected body.
  • the connecting step if the connecting surface of the polished member has a metal part, the connected body may be brought into contact with the metal part.
  • the connecting step if the connecting surface of the polished member has a metal part and the connecting surface of the connected body has a metal part, the metal parts may be brought into contact with each other.
  • the metal part may contain copper.
  • the device according to this embodiment (e.g., an electronic device such as a semiconductor device) comprises a polished member (a polished member containing a carbon material and/or a metal material) polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the parts according to this embodiment.
  • a polished member a polished member containing a carbon material and/or a metal material polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the parts according to this embodiment.
  • Example 1 A CMP polishing solution was obtained by mixing iron (III) nitrate nonahydrate and glycine with deionized water. Based on the total mass of the CMP polishing solution, the content of iron (III) nitrate nonahydrate was 0.08 mass% (iron ion content: 0.011 mass%) and the content of glycine was 3.00 mass%.
  • Example 2 A CMP polishing solution was obtained by mixing an aqueous solution of iron (III) nitrate nonahydrate, glycine, and 30 mass% hydrogen peroxide in deionized water. Based on the total mass of the CMP polishing solution, the content of iron (III) nitrate nonahydrate was 0.08 mass% (iron ion content: 0.011 mass%), the content of glycine was 3.00 mass%, and the content of hydrogen peroxide (content of hydrogen peroxide itself) was 4.00 mass%.
  • Example 3 A CMP polishing liquid was obtained in the same manner as in Example 1, except that the content of iron (III) nitrate nonahydrate was changed to 0.04 mass % (iron ion content: 0.055 mass %).
  • Example 4 A CMP polishing liquid was obtained in the same manner as in Example 1, except that the content of iron (III) nitrate nonahydrate was changed to 0.01 mass % (iron ion content: 0.0014 mass %).
  • Example 5 A CMP polishing solution was obtained by mixing iron (III) nitrate nonahydrate, glycine, and 3-methoxy-3-methyl-1-butanol (MMB) with deionized water. Based on the total mass of the CMP polishing solution, the content of iron (III) nitrate nonahydrate was 0.08 mass% (iron ion content: 0.011 mass%), the content of MMB was 3.00 mass%, and the content of glycine was 3.00 mass%.
  • Example 6 A CMP polishing liquid was obtained in the same manner as in Example 1, except that the content of iron (III) nitrate nonahydrate was changed to 0.80 mass% (iron ion content: 0.11 mass%) and the content of glycine was changed to 0.30 mass%.
  • Example 7 A CMP polishing solution was obtained by mixing iron (II) acetate and glycine with deionized water. Based on the total mass of the CMP polishing solution, the content of iron (II) acetate was 0.03 mass% (iron ion content: 0.011 mass%) and the content of glycine was 0.18 mass%.
  • Example 8 A CMP polishing solution was obtained by mixing iron (III) nitrate nonahydrate and ⁇ -alanine with deionized water. Based on the total mass of the CMP polishing solution, the content of iron (III) nitrate nonahydrate was 0.08 mass% (iron ion content: 0.011 mass%) and the content of ⁇ -alanine was 0.30 mass%.
  • Example 9 A CMP polishing liquid was obtained in the same manner as in Example 1, except that glycine was not used.
  • a CMP polishing solution was obtained by mixing glycine, a 30% by mass aqueous solution of hydrogen peroxide, and MMB with deionized water. Based on the total mass of the CMP polishing solution, the glycine content was 3.00% by mass, the hydrogen peroxide content (the content of hydrogen peroxide itself) was 4.00% by mass, and the MMB content was 3.00% by mass.
  • Example 10 Iron (III) nitrate nonahydrate and abrasive grains (colloidal silica, product name: PL-10H, average particle size: 179 nm) were mixed with deionized water. Next, glycine, a 30 mass% aqueous solution of hydrogen peroxide, and MMB were added to obtain a CMP polishing liquid.
  • the content of the abrasive grains (content of silica as a solid content) was 1 mass%
  • the content of the iron (III) nitrate nonahydrate was 0.08 mass% (content of iron ions: 0.011 mass%)
  • the content of the glycine was 3.00 mass%
  • the content of the hydrogen peroxide (content of hydrogen peroxide itself) was 4.00 mass%
  • the content of the MMB was 3.00 mass%.
  • Example 11 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the content of abrasive grains was changed to 5 mass %.
  • Example 12 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the content of iron (III) nitrate nonahydrate was changed to 0.04 mass % (iron ion content: 0.0055 mass %).
  • Example 13 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the content of iron (III) nitrate nonahydrate was changed to 0.12 mass % (iron ion content: 0.017 mass %).
  • Example 14 A CMP polishing liquid was obtained by carrying out the same procedure as in Example 10, except that iron (III) nitrate nonahydrate was changed to iron (II) acetate and the content of iron (II) acetate was 0.03 mass% (iron ion content: 0.011 mass%).
  • Example 15 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the glycine content was changed to 0.30 mass %.
  • Example 16 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the glycine content was changed to 0.60 mass %.
  • Example 17 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the glycine content was changed to 1.50 mass %.
  • Example 18 A CMP polishing liquid was obtained in the same manner as in Example 10, except that glycine was changed to ⁇ -alanine and the ⁇ -alanine content was 0.30 mass %.
  • Example 19 A CMP polishing liquid was obtained in the same manner as in Example 10, except that glycine was changed to ⁇ -alanine and the ⁇ -alanine content was 4.00 mass %.
  • Example 20 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the abrasive grains were changed to spherical silica fine particles (product name: SeaHostar KE-W30, average grain size: 290 nm).
  • Example 21 A CMP polishing liquid was obtained in the same manner as in Example 10, except that the abrasive grains were changed to spherical silica fine particles (product name: Sea Hoster IX-3-SH-W50, average grain size: 540 nm).
  • Example 22 A CMP polishing solution was obtained in the same manner as in Example 10, except that the abrasive grains were changed to colloidal silica (product name: ST-AK-YL, average grain size: 60 nm).
  • Example 2 A CMP polishing liquid was obtained in the same manner as in Example 10, except that iron (III) nitrate nonahydrate was changed to a 0.1 mol/L zinc acetate aqueous solution and the zinc acetate content (content of zinc acetate itself) was 0.04 mass% (zinc ion content: 0.013 mass%).
  • a 12-inch diameter substrate having a 10 ⁇ m thick polyimide resin layer (HD7000 series, manufactured by HD Microsystems) on a silicon substrate was prepared as a test wafer for evaluation.
  • a 12-inch diameter substrate having a 1.5 ⁇ m thick copper layer on a silicon substrate was prepared as a test wafer for evaluation.
  • the polyimide resin layer and the copper layer were polished (CMP) using the above-mentioned CMP polishing solution under the following polishing conditions.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Ce liquide de polissage CMP est destiné à polir un élément à polir contenant un matériau carboné, présente une teneur en grains abrasifs de 0 à 5 % en masse, et contient des ions fer. Ce procédé de polissage comprend une étape dans laquelle le liquide de polissage CMP susmentionné est utilisé pour polir un élément à polir contenant un matériau carboné.
PCT/JP2023/044912 2023-12-14 2023-12-14 Liquide de polissage cmp et procédé de polissage Pending WO2025126434A1 (fr)

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PCT/JP2023/044912 WO2025126434A1 (fr) 2023-12-14 2023-12-14 Liquide de polissage cmp et procédé de polissage
PCT/JP2024/043899 WO2025127083A1 (fr) 2023-12-14 2024-12-11 Solution de polissage chimico-mécanique, et procédé de polissage
TW113148355A TW202523793A (zh) 2023-12-14 2024-12-12 Cmp研磨液及研磨方法

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223139A (ja) * 2004-02-05 2005-08-18 Toshiba Corp 半導体装置の製造方法
JP2009224695A (ja) * 2008-03-18 2009-10-01 Fujifilm Corp 研磨用組成物及びそれを用いた化学的機械的研磨方法
JP2010056199A (ja) * 2008-08-27 2010-03-11 Fujifilm Corp 研磨用組成物及びそれを用いた研磨方法
JP2010080842A (ja) * 2008-09-29 2010-04-08 Fujifilm Corp 研磨用組成物及びそれを用いた研磨方法
JP2016183212A (ja) * 2015-03-25 2016-10-20 株式会社フジミインコーポレーテッド 研磨用組成物
WO2023032930A1 (fr) * 2021-08-31 2023-03-09 株式会社レゾナック Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223139A (ja) * 2004-02-05 2005-08-18 Toshiba Corp 半導体装置の製造方法
JP2009224695A (ja) * 2008-03-18 2009-10-01 Fujifilm Corp 研磨用組成物及びそれを用いた化学的機械的研磨方法
JP2010056199A (ja) * 2008-08-27 2010-03-11 Fujifilm Corp 研磨用組成物及びそれを用いた研磨方法
JP2010080842A (ja) * 2008-09-29 2010-04-08 Fujifilm Corp 研磨用組成物及びそれを用いた研磨方法
JP2016183212A (ja) * 2015-03-25 2016-10-20 株式会社フジミインコーポレーテッド 研磨用組成物
WO2023032930A1 (fr) * 2021-08-31 2023-03-09 株式会社レゾナック Liquide de polissage, procédé de polissage, procédé de fabrication de composant, et procédé de fabrication de composant semi-conducteur

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