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WO2025116060A1 - Métasurface réfléchissante - Google Patents

Métasurface réfléchissante Download PDF

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Publication number
WO2025116060A1
WO2025116060A1 PCT/KR2023/019370 KR2023019370W WO2025116060A1 WO 2025116060 A1 WO2025116060 A1 WO 2025116060A1 KR 2023019370 W KR2023019370 W KR 2023019370W WO 2025116060 A1 WO2025116060 A1 WO 2025116060A1
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WO
WIPO (PCT)
Prior art keywords
patch
sub
point
metal patch
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/KR2023/019370
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English (en)
Korean (ko)
Inventor
우승민
박병용
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LG Electronics Inc
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LG Electronics Inc
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Publication date
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Priority to PCT/KR2023/019370 priority Critical patent/WO2025116060A1/fr
Publication of WO2025116060A1 publication Critical patent/WO2025116060A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas

Definitions

  • the present disclosure relates to a reflective metasurface. More particularly, it relates to a reflective metasurface based on a switching element implemented in a multilayer substrate package.
  • Reconfigurable Intelligent Surface can expand communication coverage at a low cost compared to installing repeaters. Radio waves in high frequency bands above 3 GHz have a stronger straightness than diffraction. Accordingly, communication coverage is reduced, so it is necessary to use RIS to reflect straight radio waves and transmit radio waves in the direction desired by the user to increase coverage.
  • RIS Reconfigurable Intelligent Surface
  • 6G communication the use of a frequency band above 7 GHz is being discussed, and 7-20 GHz may be a strong candidate frequency band.
  • the phased array antenna can adjust the beam steering direction by electronically controlling the phase of the radio wave on a per-element basis.
  • the phase control of the radio wave on a per-element basis is applied in a phase shifter at the radio frequency level.
  • This phase shifter has the problem of increasing the weight, size, and cost of the phased array antenna.
  • the RIS module can be configured to vary the phase of the reflected signal by changing the on/off state of the switching element, such as a PIN diode. Therefore, the RIS module using the switching element can be implemented as a reflective metasurface.
  • the reflective metasurface which operates as a reflector in a specific frequency band, has a problem in that the reflection performance is degraded by the current formed between the metal patches. In addition, the reflective metasurface has a problem in that the reflection performance deviation is large depending on the on/off state of the switching element.
  • This specification is intended to prevent the reflection performance from being degraded depending on the polarization direction of the radio wave incident on the reflective metasurface.
  • the purpose of this specification is to minimize the variation in the reflection performance of a reflective metasurface depending on the on/off state of a switching element.
  • the present specification is to improve the reflection performance of a reflective metasurface and thereby enhance wireless communication coverage using a reflective metasurface.
  • the present specification aims to minimize performance attenuation through a reflective metasurface of a multilayer substrate structure.
  • a reflective metasurface includes a first metal patch disposed on a first surface which is an outermost surface of a substrate; a second metal patch disposed on a second surface which is an inner layer of the substrate; first sub-patches and second sub-patches disposed on a third surface which is an inner layer of the substrate; a ground region disposed on a fourth surface which is an outermost surface opposite to the first surface of the substrate; and a switching element formed in a non-conductive region formed in the ground region of the fourth surface.
  • the first part of the switching element may be connected by the first metal patch and the first vias
  • the second part of the switching element may be connected by the second metal patch and the second vias.
  • the first sub-patches may be connected by the ground region and the third vias
  • the second sub-patches may be connected by the ground region and the fourth vias.
  • the first metal patch may be formed as a polygonal patch having a shape of a pentagon or more or a circular patch.
  • the reflective meta surface may further include a fifth via vertically connecting a center point of the first metal patch and the ground region.
  • a reflective metasurface comprises: a first metal patch disposed on a first surface, which is an outermost surface of a substrate; a second metal patch disposed on the first surface of the substrate; first sub-patches and second sub-patches disposed spaced apart from and adjacent to one end and the other end of the second metal patch; a ground region disposed on a second surface, which is an outermost surface opposite to the first surface of the substrate; and a switching element formed in a non-conductive region formed in the ground region of the fourth surface.
  • the first sub-patches may be connected to the ground region by first vias, and the second sub-patches may be connected to the ground region by second vias.
  • a first metal patch which is a main patch, in a polygonal or circular structure having a pentagon or larger shape, it is possible to prevent the reflection performance from being deteriorated depending on the polarization direction of an electric wave incident on the reflective metasurface.
  • the switching elements are arranged in mutually perpendicular first and second axis directions of the first metal patch, so that the deviation in the reflection performance of the reflective metasurface depending on the on/off state of the switching elements can be minimized.
  • the reflection performance of the reflective metasurface can be improved, thereby improving wireless communication coverage using the reflective metasurface.
  • the wireless communication coverage using the reflective metasurface can be improved by improving the reflection performance of the reflective metasurface through the overlapping structure between the first and second metal patches.
  • performance attenuation can be minimized through a reflective meta surface of a multilayer substrate structure so that performance attenuation does not occur in a connection structure such as soldering of elements such as switching elements and inductors.
  • FIG. 1 illustrates the structure of an array antenna module including a plurality of elements according to the present specification.
  • Figure 2 shows a structure implemented with a reflective RIS and a transparent RIS according to the present specification.
  • Figure 3 shows the structure of a reflective metasurface on which switching elements are arranged.
  • Figure 4 shows the structure of RIS unit cells arranged in a direction matching the angle of incidence of the radio wave or arranged in an inclined direction.
  • Figure 5 is a graph comparing the reflection loss characteristics of the RIS unit cells of Figure 4.
  • FIG. 6 shows a front view of a reflective metasurface according to the first embodiment of the present specification.
  • Figure 7 shows a perspective view of the reflective metasurface of Figure 6.
  • Fig. 8 shows a second metal patch connected to the first point and the second point of the first metal patch of Fig. 6.
  • Figure 9 shows the reflection loss characteristics and phase characteristics according to the on/off state of the switching element in the reflective metasurface of Figure 6.
  • Figure 10 shows a front view of a reflective metasurface according to the present specification.
  • Figure 11 shows a side view of the reflective metasurface of Figure 10.
  • Figure 12 shows the structure of each layer of the reflective metasurface of Figures 10 and 11.
  • Figure 13 shows the current distribution according to the structures of the first and second metal patches according to the embodiments.
  • Figure 14 shows the reflection loss characteristics and phase variation characteristics according to the on/off of the switching element in the reflective metasurface of Figures 10 to 12.
  • Fig. 15 shows a structure in which a control unit is formed to perform an on/off control operation of a switching element of a reflective metasurface according to the present specification.
  • Figure 16 shows the current distribution according to the on/off operation of the first and second switching elements.
  • FIGS 17 to 19 illustrate reflective metasurfaces with different array structures according to embodiments.
  • a module including a plurality of elements may be referred to as a phase delay array antenna module.
  • the antenna module may be configured to include a plurality of radiators and a phase delay element capable of implementing a phase delay.
  • the phase delay element may be implemented as a feed structure of a specific structure without a separate electronic component such as a phase shifter.
  • the array antenna module may be configured to support 6G wireless communication services.
  • the array antenna module may be configured to operate in a millimeter wave band or in a 10 GHz band.
  • the array antenna module may be applied to a mobile communication antenna, a vehicle antenna, or a satellite communication antenna.
  • 6G wireless communication services are not only applicable to electronic devices such as mobile terminals or video display devices. 6G wireless communication services can be applied to electronic devices that support fully autonomous vehicles, artificial intelligence (AI) robots, and augmented/virtual reality (AR/VR)-based metaverses.
  • AI artificial intelligence
  • AR/VR augmented/virtual reality
  • FIG. 1 illustrates the structure of an array antenna module including a plurality of elements according to the present specification.
  • an array antenna module (1000) may be configured as an array antenna including a plurality of elements (1100-1 to 1100-8).
  • the number of the plurality of elements is not limited to 8 and may vary depending on the application.
  • the antenna module (1000) may be configured as a one-dimensional array antenna in which a plurality of elements are arranged in one axial direction.
  • the antenna module (1000) may be configured as a two-dimensional array antenna in which a plurality of elements are arranged in one axial direction and another axial direction perpendicular thereto.
  • the spacing (G1) between the plurality of elements (1100-1 to 1100-8) can be implemented as a numerical value associated with a wavelength corresponding to an operating frequency.
  • Each of the plurality of elements (1100-1 to 1100-8) can be operably coupled to a phase delay element (1150-1 to 1150-8).
  • the phase delay elements (1150-1 to 1150-8) can be formed with a feed structure having a phase delay.
  • the phase delay elements (1150-1 to 1150-8) can be formed with a feed structure connecting adjacent antenna elements.
  • a transmission line (1200) connected to a plurality of elements (1100-1 to 1100-8) may be implemented as a waveguide, a microstrip line, a strip line, or a substrate integrated waveguide (SIW).
  • Each of the plurality of elements (1100-1 to 1100-8) may be independently controlled to be turned on/off.
  • Each of the plurality of elements (1100-1 to 1100-8) may be independently controlled to be turned on/off to adjust a beam forming direction of the antenna module (1000).
  • the phase of a signal applied to the plurality of elements (1100-1 to 1100-8) can be varied as illustrated in the transmission line (1200) of FIG. 1.
  • the phase difference between adjacent elements increases. Accordingly, as the interval between the on/off operations of the plurality of elements (1100-1 to 1100-8) decreases, the beam forming angle increases.
  • an antenna module including a plurality of antenna elements may be capable of phase control in combination with a reconfigurable intelligent surface (RIS).
  • FIG. 2 shows a structure implemented with a reflective RIS and a transparent RIS according to the present specification.
  • the antenna module (1000) may be configured to include a reflective RIS (1000a) and at least one external antenna (1300).
  • a wireless signal radiated from the external antenna (1300) may be configured to be reflected by the reflective RIS (1000a).
  • the beam forming angle of the wireless signal may be varied by independently varying the on/off state of each element constituting the reflective RIS (1000a).
  • the antenna module (1000) may be configured to include a transitive RIS (1000a) and at least one external antenna (1300).
  • a wireless signal radiated from the external antenna (1300) may be configured to pass through the transitive RIS (1000b).
  • the beam forming angle of the wireless signal may be varied by independently varying the on/off state of each element constituting the transitive RIS (1000b).
  • FIG. 3 shows a structure of a reflection meta surface in which a switching element is arranged.
  • a reflection meta surface (100) may be configured to include a first patch (110), a second patch (120), and a switching element (1200).
  • a switching element (1200) may be arranged between an end of the first patch (110) and an end of the second patch (120).
  • the first patch (110) and the second patch (120) may be arranged to be spaced apart from each other by the same interval (Ga).
  • FIG. 4 shows the structure of RIS unit cells arranged in a direction matching the incident angle of the radio wave or in an inclined direction.
  • a switching element (1200) may be arranged between an end of a first patch (1110) and an end of a second patch (1120). In an area where the first patch (1110) and the second patch (1120) face each other, the first patch (1110) and the second patch (1120) may be arranged with the same spacing between them.
  • the switching element (1200) may be implemented as a pin diode, but is not limited thereto and may be changed to any switching element depending on the application.
  • Fig. 4(a) shows the structure of a RIS unit cell (1000) arranged in a direction matching the incident angle of the radio wave.
  • the radio wave can be incident so as to have an H-polarization in the X-axis direction with an incident angle of 0 degrees.
  • the RIS unit cell (1000) can be arranged in a direction matching the incident angle of the radio wave.
  • FIG. 4(b) shows the structure of RIS unit cells (1000) arranged in a direction inclined at a predetermined angle (e.g., 10 degrees) with respect to the incident angle of the radio wave.
  • the radio wave may be incident at an incident angle of 0 degrees and have an H-polarization in the X-axis direction.
  • the RIS unit cells (1000) may be arranged in a direction inclined at a predetermined angle with respect to the incident angle of the radio wave.
  • a RIS unit cell (1000) can reflect a radio signal having a polarization incident in the direction in which the switching element (1200) is located at a predetermined ratio or higher.
  • a RIS unit cell can be configured to reflect polarizations in various directions by using multiple switching elements.
  • switching elements can be arranged for all polarization directions of 360 degrees.
  • FIG. 5 is a graph comparing the reflection loss characteristics of the RIS unit cells of FIG. 4.
  • the switching element (1200) when the switching element (1200) is on, the reflection loss is -1.32 dB at 9.8 GHz.
  • the reflection loss is -0.46 dB at 9.8 GHz.
  • the switching element (1200) is arranged in a direction matching the polarization direction of the radio wave, the difference in reflection loss according to the on/off of the switching element has a limited value of 1 dB or less.
  • the switching element (1200) When the switching element (1200) is arranged in a direction that is about 10 degrees different from the polarization direction of the radio wave, the difference in reflection loss according to the on/off of the switching element significantly increases to more than 5 dB. In this regard, it is almost impossible to expect or predict a polarization direction with 100% purity in a desired direction for a radio wave transmitted in free space.
  • FIG. 6 illustrates a front view of a reflective metasurface according to the first embodiment of the present specification.
  • FIG. 7 illustrates a perspective view of the reflective metasurface of FIG. 6.
  • FIG. 8 illustrates a second metal patch connected to a first point and a second point of a first metal patch of FIG. 6. Referring to FIG. 6 and FIG. 8(a), a second metal patch connected to a first point of a first metal patch (1110) through a first switching element (1210) is illustrated. Referring to FIG. 6 and FIG. 8(b), a second metal patch connected to a second point of a first metal patch (1110) through a second switching element (1220) is illustrated.
  • a reflective metasurface (1000a) will be described with reference to FIGS. 6 to 8.
  • the reflective metasurface (1000a) may include a first metal patch (1110), a second metal patch (1120a), first sub-patches (1121) and second sub-patches (1122), a ground region (1100g), and a switching element (1200).
  • the first metal patch (1110) may be arranged on the first surface (S1), which is the outermost surface of the substrate.
  • the first metal patch (1110) may be formed as a polygonal patch or a circular patch.
  • the first metal patch (1110) may be formed as a polygonal patch having a shape of pentagons or more.
  • the first metal patch (1110) may be formed as a patch having a shape of dodecagons, but is not limited thereto and may be changed according to the application.
  • the switching element (1200) When the switching element (1200) is in an off state, the first metal patch (1110) may operate to resonate at a first frequency within an operating frequency band.
  • the second metal patch (1120a) may be placed on the first surface (S1) of the substrate (1010).
  • the first metal patch (1110) and the second metal patch (1120a) may be referred to as a main patch and a sub patch, respectively.
  • the second metal patch (1120) may be placed in the 0 degree direction and the 90 degree direction adjacent to the first point and the second point of the first metal patch (1110).
  • the reflection loss performance deviation can be improved for signals having polarization in various directions.
  • the reflection loss performance can be degraded when the switching element is turned off.
  • the reflection loss performance can be improved compared to a square shape.
  • the reflection loss performance can be improved by using the first sub-patches (1121) and the second sub-patches (1122) as a ground pad structure while using the first metal patch (1110) of a pentagon or larger shape.
  • the surface impedance of the first sub-patches (1121) and the second sub-patches (1122) increases through the ground pad structure, thereby improving the reflection loss performance and deviation. Accordingly, when the first metal patch (1110) of a pentagon or larger shape is used, the reflection loss performance is improved while the reflection loss deviation according to the switching element on/off and polarization direction is also improved.
  • first sub-patches (1121) and the second sub-patches (1122) may be spaced apart and arranged adjacent to one end and the other end of the second metal patch (1120).
  • the first sub-patches (1121) and the second sub-patches (1122) may be referred to as first ground pads and second ground pads, respectively.
  • the first sub-patches (1121) and the second sub-patches (1122) improve reflection loss and widen the frequency range in which the phase is varied, thereby increasing the operating bandwidth.
  • the ground area (1100g) may be placed on the second surface (S2) which is the outermost surface opposite the first surface (S1) of the substrate (1010).
  • the first surface (S1) and the second surface (S2) of the substrate (1010) may correspond to the front surface and the rear surface, respectively.
  • the switching element (1200) may be formed in a non-conductive region formed in the ground region (1100g) of the second surface (S2) of the substrate (1010).
  • the first metal patch (1110) and the second metal patch (1120) may operate together to resonate at a second frequency within an operating frequency band.
  • the first frequency may be set to a higher frequency than the second frequency.
  • the phase may vary by about 180 degrees within the operating frequency band.
  • the first sub-patches (1121) can be connected to the ground area (1100g) by first vias (V1a, V1b).
  • the second sub-patches (1122) can be connected to the ground area (1100g) by second vias (V2a, V2b).
  • the second metal patch (1120a) may be formed to include a plurality of sub-patches.
  • the second metal patch (1120a) may be formed to include a third sub-patch (1123), a fourth sub-patch (1124), and a fifth sub-patch (1125) disposed on the second surface (S2) of the substrate (1010).
  • the second metal patch (1120) may be formed to include a sixth sub-patch (1126), a seventh sub-patch (1127), and an eighth sub-patch (1128) disposed on the second surface (S2) of the substrate (1010).
  • the first and second sub-patches (1121, 1122) on the third side (S3) of the substrate (1010) and the third to eighth sub-patches (1123, 1124, 1125, 1126, 1127, 1128) on the second side (S2) of the substrate (1010) can form a second metal patch (1120).
  • the third sub-patch (1123) may be formed with a first width (Ws1) and a first length (Ls1).
  • the third sub-patch (1123) may be arranged to be spaced apart from a first point of the first metal patch (1110) by a first interval (Ga1).
  • the fourth sub-patch (1124) may be connected to the third sub-patch (1123) and formed to have a second width (Ws2) and a second length (Ls2).
  • the fourth sub-patch (1124) may be arranged to be spaced apart from a first point of the first metal patch (1110) by a second interval (Ga2).
  • the fifth sub-patch (1125) may be connected to the fourth sub-patch (1124) and formed with a third width (Ws3) and a third length (Ls3).
  • the fifth sub-patch (1125) may be arranged to be spaced apart from the first point of the first metal patch (1110) by a third interval (Ga3).
  • the second width (Ws2) of the fourth sub-patch (1124) may be formed wider than the first width (Ws1) of the third sub-patch (1123).
  • the third width (Ws3) of the fifth sub-patch (1125) may be formed wider than the second width (Ws2) of the fourth sub-patch (1124).
  • the first sub-patches (1121a, 1121b) arranged on the first surface (S1) of the substrate (1010) may be arranged adjacent to one end and the other end of the third sub-patch (1123) and spaced apart from each other in the first axis direction.
  • the first sub-patches (1121a, 1121b) arranged on the first surface (S1) of the substrate (1010) may be arranged to overlap the fourth sub-patch (1124) in the second axis direction perpendicular to the first axis.
  • the first axis direction may be set to the X-axis direction and the second axis direction may be set to the Y-axis direction.
  • the sixth sub-patch (1126) may be formed with a first width (Ws1) and a first length (Ls1).
  • the sixth sub-patch (1126) may be arranged to be spaced apart from a second point of the first metal patch (1110) by a first interval (Ga1).
  • the seventh sub-patch (1127) may be connected to the sixth sub-patch (1126) and formed to have a second width (Ws2) and a second length (Ls2).
  • the seventh sub-patch (1127) may be arranged to be spaced apart from a second point of the first metal patch (1110) by a second interval (Ga2).
  • the eighth sub-patch (1128) may be connected to the seventh sub-patch (1127) and formed with a third width (Ws3) and a third length (Ls3).
  • the eighth sub-patch (1128) may be arranged to be spaced apart from a first point of the first metal patch (1110) by a third interval (Ga3).
  • the first point of the first metal patch (1110) may be formed in a second axis direction, and the second point may be formed in a first axis direction perpendicular to the second axis.
  • the first axis direction may be set to the X-axis direction, and the second axis direction may be set to the Y-axis direction.
  • the second width (Ws2) of the seventh sub-patch (1127) may be formed wider than the first width (Ws1) of the sixth sub-patch (1126).
  • the third width (Ws3) of the eighth sub-patch (1128) may be formed wider than the second width (Ws2) of the seventh sub-patch (1127).
  • the second sub-patches (1122a, 1122b) arranged on the first surface (S1) of the substrate (1010) may be arranged adjacent to one end and the other end of the sixth sub-patch (1126) and spaced apart from each other in the second axial direction.
  • the second sub-patches (1122a, 1122b) arranged on the first surface (S1) of the substrate (1010) may be arranged to overlap the seventh sub-patch (1127) in the first axial direction.
  • the first axial direction may be set to the X-axis direction and the second axial direction may be set to the Y-axis direction.
  • the switching element (1200) may be configured to include a first switching element (1210) and a second switching element (1220).
  • the first switching element (1210) may be connected to a first point of the first metal patch (1110) and a third point of the second metal patch (1120).
  • the second switching element (1220) may be connected to a second point of the first metal patch (1110) and a fourth point of the second metal patch (1120b).
  • the reflective metasurface (1000) may be configured to further include a bias line (BL) and an inductor (Ind).
  • the second metal patches (1120) may be connected to each other by the bias line (BL).
  • the bias line (BL) may be formed to connect one end of the fifth sub-patch (1125) and the other end of the eighth sub-patch (1128) so that a control voltage is transmitted to the first and second switching elements (1210, 1220).
  • the bias line (BL) is configured to be implemented with a narrow width of a predetermined width (e.g., 0.2 mm) to increase the impedance so that an RF signal is blocked.
  • An inductor (Ind) may be arranged at a point on a bias line (BL) and a point on a second surface (S2) of a substrate (1010) so that a control voltage is transmitted to a switching element (1200) and an RF signal is blocked.
  • the inductor (Ind) arranged to block an RF signal may be referred to as an RF choke.
  • the inductor (Ind) may be arranged between a point on the bias line (BL) and a ground area (1100g) of the second surface (S2) of the substrate (1010) so that the control voltage is transmitted to the first and second switching elements simultaneously.
  • a bias line (BL) may be formed to transmit the first and second control voltages to the first and second switching elements (1210, 1220).
  • the bias line (BL) may be formed to connect one end of the fifth sub-patch (1125) and the other end of the eighth sub-patch (1128).
  • the inductor (Ind) may be arranged on the bias line (BL) so that the first control voltage is transmitted to the first switching element (1110) but not transmitted to the second switching element (1120).
  • the inductor (Ind) may be arranged on the bias line (BL) so that the second control voltage is transmitted to the second switching element (1120) but not transmitted to the first switching element (1120).
  • the inductor (Ind) may be arranged between a point on the bias line (BL) and the ground area (1100g) of the fourth surface (S4) of the substrate (1010) so that the first control voltage is transmitted to the first switching element (1110) and the second control voltage is transmitted to the second switching element (1120).
  • Fig. 9 shows the reflection loss characteristics and phase characteristics according to the on/off state of the switching element in the reflective metasurface of Fig. 6.
  • Fig. 9(a) shows the reflection loss characteristics according to the on/off state of the switching element in the reflective metasurface of Fig. 6.
  • Fig. 9(b) shows the phase characteristics according to the on/off state of the switching element in the reflective metasurface of Fig. 6.
  • the switching element (1200) shows the reflection loss performance when turned on/off.
  • the solid line in the graph indicates the case where the radio wave is incident in a direction consistent with the polarization direction.
  • the dotted line in the graph indicates the case where the radio wave is incident in a direction 45 degrees different from the polarization direction.
  • the switching element (1200) When a radio wave is incident in a direction consistent with the polarization, the switching element (1200) exhibits excellent reflection loss performance by having a reflection loss value of -0.5 to -1 dB at 10 GHz depending on the on/off state.
  • the first and second sub-patches (1121, 1122) in the form of ground pads located between the first and second metal patches (1110, 1120) increase the surface impedance of the reflective metasurface. This is because the reflection performance of the reflective metasurface improves as the surface impedance increases.
  • the switching element (1200) shows good reflection loss performance with a reflection loss value of -0.5 to -1.2 dB at 10 GHz depending on the on/off state. Accordingly, it can be confirmed that the reflection loss performance is not attenuated even if the radio wave is incident with the polarization of 45 degrees. In addition, it can be confirmed that no performance degradation of reflection loss occurs in the 9.5-10.5 GHz band, which can be included in the operating band centered on 10 GHz.
  • the solid line in the graph indicates a case where the radio wave is incident in a direction consistent with the polarization direction.
  • the dotted line in the graph indicates a case where the radio wave is incident in a direction 45 degrees different from the polarization direction.
  • FIG. 10 shows a front view of the reflective metasurface according to the present specification.
  • FIG. 11 shows a side view of the reflective metasurface of FIG. 10.
  • FIG. 12 shows the structure of each layer of the reflective metasurfaces of FIGS. 10 and 11.
  • Fig. 12(a) shows a first metal patch (1110) of a reflective metasurface arranged on a first surface of a substrate.
  • Fig. 12(b) shows a second metal patch (1120) of a reflective metasurface arranged on a second surface of the substrate.
  • Fig. 12(c) shows first and second sub-patches (1121, 1122) of a reflective metasurface arranged on a third surface of the substrate.
  • Fig. 12(d) shows a ground region (1110g) of a reflective metasurface arranged on a fourth surface of the substrate.
  • a reflective metasurface (1000) implemented as a multilayer substrate is described with reference to FIGS. 10 to 12.
  • the reflective metasurface (1000) may include a first metal patch (1110), a second metal patch (1120), first sub-patches (1121) and second sub-patches (1122), a ground region (1100g), and a switching element (1200).
  • the first metal patch (1110) may be arranged on the first surface (S1), which is the outermost surface of the substrate (1010).
  • the first metal patch (1110) may be formed as a polygonal patch or a circular patch.
  • the first metal patch (1110) may be formed as a polygonal patch having a shape of pentagons or more.
  • the first metal patch (1110) may be formed as a patch having a shape of dodecagons, but is not limited thereto and may be changed according to the application.
  • the switching element (1200) is in an off state, the first metal patch (1110) may operate to resonate at a first frequency within an operating frequency band.
  • the second metal patch (1120) may be placed on the second surface (S2), which is a layer inside the substrate (1010).
  • the first metal patch (1110) and the second metal patch (1120) may be referred to as a main patch and a sub patch, respectively.
  • the second metal patch (1120) may be placed in the 0 degree direction and the 90 degree direction adjacent to the first point and the second point of the first metal patch (1110).
  • the first sub-patches (1121) and the second sub-patches (1122) may be arranged on the third surface (S3), which is a layer inside the substrate (1010).
  • the first sub-patches (1121) and the second sub-patches (1122) may be referred to as first ground pads and second ground pads, respectively.
  • the first sub-patches (1121) and the second sub-patches (1122) improve reflection loss and widen the frequency range in which the phase is varied, thereby increasing the operating bandwidth.
  • the ground area (1100g) may be placed on the fourth surface (S4) which is the outermost surface opposite the first surface (S1) of the substrate (1010).
  • the first surface (S1) and the fourth surface (S4) of the substrate (1010) may correspond to the front surface and the rear surface, respectively.
  • the switching element (1200) may be formed in a non-conductive region formed in the ground region of the fourth surface (S4) of the substrate (1010).
  • the first metal patch (1110) and the second metal patch (1120) may operate together to resonate at a second frequency within an operating frequency band.
  • the first frequency may be set to a higher frequency than the second frequency.
  • the phase may vary by about 180 degrees within the operating frequency band.
  • a first part of the switching element (1200) may be connected to a first metal patch (1110) and first vias (V1a, V1b).
  • a change in the second frequency occurs due to a parasitic inductance component of the first vias (V1a, V1b) connected to the first metal patch (1110), which is a main patch, thereby affecting phase variation.
  • a second part of the switching element (1200) may be connected to a second metal patch (1120) and second vias (V2a, V2b).
  • a change in the second frequency occurs due to a parasitic inductance component of the second vias (V2a, V2b) connected to the second metal patch (1120), which is a sub patch, thereby affecting phase variation.
  • parasitic capacitance may be generated in the region where the first metal patch (1110) and the second metal patch (1120) overlap, thereby canceling out the parasitic inductance. Accordingly, multiple resonances may be generated by the parasitic inductance and parasitic capacitance, thereby realizing wideband performance. In addition, the occurrence of a second frequency transition by the parasitic inductance and parasitic capacitance may be minimized.
  • the reflection performance of the reflective metasurface (1000) is improved by the first metal patch (1110) and the second metal patch (1120) having overlapping regions.
  • the first sub-patches (1121) can be connected to the ground area (1100g) and third vias (V3a, V3b).
  • the second sub-patches (1122) can be connected to the ground area (1100g) and fourth vias (V4a, V4b).
  • the reflective metasurface (1000) can be configured to include a plurality of vias connecting a patch disposed within a substrate (1010) and a ground region.
  • the reflective metasurface (1000) can include first vias (V1a, V1b), second vias (V2a, V2b), third vias (V3a, V3b), and fourth vias (V4a, V4b).
  • the reflective metasurface (1000) can further include a fifth via (V5) and a sixth via (V6).
  • the fifth via (V5) can be formed to vertically connect a center point of the first metal patch (1110) and the ground region (1100g).
  • the sixth via (V6) can connect a point on a bias line (BL) of the second side (S2) of the substrate (1010) and a point on the fourth side (S4) where an inductor (Ind) is arranged.
  • first metal patch (1110) of a first surface (S1) which is a first layer of a substrate (1010) Three vias are arranged on a first metal patch (1110) of a first surface (S1) which is a first layer of a substrate (1010).
  • the first vias (V1a, V1b) and the fifth via (V5) arranged on the first metal patch (1110) are formed from the first surface (S1) which is a first layer of the substrate (1010) to the fourth surface (S4) which is a fourth layer.
  • the fifth via (V5) arranged at the center point of the first metal patch (1110) extends to the fourth surface (S4) of the substrate (1010).
  • the fifth via (V5) and the ground region (1100g) are electrically separated by a dielectric region arranged therebetween, so that a control voltage of a DC bias can be transmitted to the first metal patch (1110).
  • First vias (V1a, V1b) arranged offset in the first and second axis directions from the center point of the first metal patch (1110) are connected to first and second switching elements (1210, 1220) arranged on the fourth surface (S4), which is the fourth layer of the substrate (1010).
  • Second vias (V2a, V2b) are arranged on a second metal patch (1120) of a first surface (S2), which is a second layer of a substrate (1010).
  • the second vias (V2a, V2b) arranged on the second metal patch (1120) are formed from the second surface (S2), which is a second layer of the substrate (1010), to the fourth surface (S4), which is a fourth layer.
  • the first and second metal patches (1110, 1120) connected by the first vias (V1a, V1b) are connected to the second metal patch (1120) connected by the second vias (V2a, V2b) and the switching element (1200).
  • the first and second metal patches (1110, 1120) can be electrically connected or disconnected.
  • a portion of the second metal patch (1120) is arranged to overlap the first metal patch (1110).
  • the second vias (V2a, V2b) must be arranged further away from the center point of the first metal patch (1110) than the first vias (V1a, V1b).
  • a stronger electric field is formed in the overlapping region of the first and second metal patches (1110, 1120) than in other regions, thereby causing normal current flow in the second metal patch (1120). If the first and second metal patches (1110, 1120) are not overlapped in different layers but are spaced apart from each other in the same layer, most of the current flow occurs in the via structure. Accordingly, a stronger magnetic field is generated in the via structure than in other regions, thereby causing self-resonance. Accordingly, since normal current flow cannot be caused in the second metal patch (1120), the characteristics of the RIS may be deteriorated.
  • FIG. 13 shows current distributions according to structures of the first and second metal patches according to embodiments.
  • FIG. 13(a) shows the current distribution of the first structure of the first and second metal patches (1110, 1120) formed in a non-overlapping structure.
  • a current having a value higher than a certain level is formed in the second metal patch (1120), which is a sub-patch, and an electric field higher than that in other regions is formed in the overlapping region (Rb) of the first and second metal patches (1110, 1120).
  • An electric field distribution having a value higher than a certain level is formed not only in the first and second vias (V1, V2) within the overlapping region (Rb) but also in the second metal patch (1120), which is a sub-patch.
  • Fig. 13(b) shows an electric field distribution of the second structure of the first and second metal patches (1110, 1120) formed in an overlapping structure.
  • Fig. 13(c) shows a current distribution of the second structure of the first and second metal patches (1110, 1120) formed in an overlapping structure.
  • a higher electric field is formed in the overlapping region (Rb) of the first and second metal patches (1110, 1120) than in other regions.
  • An electric field distribution having a value greater than a certain level is formed not only in the first and second vias (V1, V2) within the overlapping region (Rb) but also in the second metal patch (1120), which is a sub-patch. Accordingly, the current is not concentrated only in the first and second vias (V1, V2), but is transmitted to the region (Rc) where the second metal patch (1120), which is a sub-patch, is arranged.
  • the second metal patch (1120) may be formed to include a plurality of sub-patches.
  • the second metal patch (1120) may be formed to include a third sub-patch (1123), a fourth sub-patch (1124), and a fifth sub-patch (1125) disposed on the second surface (S2) of the substrate (1010).
  • the second metal patch (1120) may be formed to include a sixth sub-patch (1126), a seventh sub-patch (1127), and an eighth sub-patch (1128) disposed on the second surface (S2) of the substrate (1010).
  • the first and second sub-patches (1121, 1122) on the third side (S3) of the substrate (1010) and the third to eighth sub-patches (1123, 1124, 1125, 1126, 1127, 1128) on the second side (S2) of the substrate (1010) can form a second metal patch (1120).
  • the third sub-patch (1123) may be formed with a first width (Ws1) and a first length (Ls1). The third sub-patch (1123) may be arranged to overlap the first metal patch (1110).
  • the fourth sub-patch (1124) may be connected to the third sub-patch (1123) and may be formed with a second width (Ws2) and a second length (Ls2).
  • the fourth sub-patch (1124) may be arranged to be spaced apart from a first point, which is a boundary point on one side of the first metal patch (1110), by a first interval (Ga1).
  • the fifth sub-patch (1125) may be connected to the fourth sub-patch (1124) and formed with a third width (Ws3) and a third length (Ls3).
  • the fifth sub-patch (1125) may be arranged to be spaced apart from a first point, which is a boundary point on one side of the first metal patch (1110), by a second interval (Ga2).
  • the second width (Ws2) of the fourth sub-patch (1124) may be formed wider than the first width (Ws1) of the third sub-patch (1123).
  • the third width (Ws3) of the fifth sub-patch (1125) may be formed wider than the second width (Ws2) of the fourth sub-patch (1124).
  • the first sub-patches (1121a, 1121b) may be arranged adjacent to one end and the other end of the third sub-patch (1123) and spaced apart from each other in the first axis direction.
  • the first sub-patches (1121a, 1121b) may be arranged to overlap the fourth sub-patch (1124) in a second axis direction perpendicular to the first axis.
  • the first axis direction may be set to the X-axis direction and the second axis direction may be set to the Y-axis direction.
  • the sixth sub-patch (1126) may be formed with a first width (Ws1) and a first length (Ls1). The sixth sub-patch (1126) may be arranged to overlap the first metal patch (1110).
  • the seventh sub-patch (1127) may be connected to the sixth sub-patch (1126) and may be formed with a second width (Ws2) and a second length (Ls2).
  • the seventh sub-patch (1127) may be arranged to be spaced apart from a second point that is rotated 90 degrees from a first point, which is a boundary point on one side of the first metal patch (1110), by a first interval (Ga2).
  • the eighth sub-patch (1128) may be connected to the seventh sub-patch (1127) and formed with a third width (Ws3) and a third length (Ls3).
  • the eighth sub-patch (1128) may be arranged to be spaced apart from the second point of the first metal patch (1110) by a third interval (Ga3).
  • the first point of the first metal patch (1110) may be formed in the second axis direction, and the second point may be formed in the first axis direction perpendicular to the second axis.
  • the first axis direction may be set to the X-axis direction, and the second axis direction may be set to the Y-axis direction.
  • the second width (Ws2) of the seventh sub-patch (1127) may be formed wider than the first width (Ws1) of the sixth sub-patch (1126).
  • the third width (Ws3) of the eighth sub-patch (1128) may be formed wider than the second width (Ws2) of the seventh sub-patch (1127).
  • the second sub-patches (1122a, 1122b) may be arranged adjacent to one end and the other end of the sixth sub-patch (1126) and spaced apart from each other in the second axial direction.
  • the second sub-patches (1122a, 1122b) may be arranged to overlap the seventh sub-patch (1127) in the first axial direction.
  • the first axial direction may be set to the X-axis direction and the second axial direction may be set to the Y-axis direction.
  • the switching element (1200) may be configured to include a first switching element (1210) and a second switching element (1220).
  • the first switching element (1210) may be connected to a first point of the first metal patch (1110) and a third point of the second metal patch (1120).
  • the second switching element (1220) may be connected to a second point of the first metal patch (1110) and a fourth point of the second metal patch (1120).
  • the reflective metasurface (1000) may be configured to further include a bias line (BL) and an inductor (Ind).
  • the bias line (BL) may be formed to transmit first and second control voltages to the first and second switching elements (1210, 1220).
  • the bias line (BL) may be formed to connect one end of the fifth sub-patch (1125) and the other end of the eighth sub-patch (1128).
  • An inductor (Ind) may be arranged at a point on a bias line (BL) and a point on a fourth side (S4) of a substrate (1010) so that a control voltage is transmitted to a switching element (1200) and an RF signal is blocked.
  • the inductor (Ind) arranged to block an RF signal may be referred to as an RF choke.
  • the inductor (Ind) may be arranged between a point on the bias line (BL) and a ground area (1100g) of the fourth side (S4) of the substrate (1010) so that the control voltage is transmitted to the first and second switching elements simultaneously.
  • a bias line (BL) may be formed to transmit the first and second control voltages to the first and second switching elements (1210, 1220).
  • the bias line (BL) may be formed to connect one end of the fifth sub-patch (1125) and the other end of the eighth sub-patch (1128).
  • the inductor (Ind) may be arranged on the bias line (BL) so that the first control voltage is transmitted to the first switching element (1110) but not transmitted to the second switching element (1120).
  • the inductor (Ind) may be arranged on the bias line (BL) so that the second control voltage is transmitted to the second switching element (1120) but not transmitted to the first switching element (1120).
  • the inductor (Ind) may be arranged between a point on the bias line (BL) and the ground area (1100g) of the fourth side (S4) of the substrate (1010) so that the first control voltage is transmitted to the first switching element (1110) and the second control voltage is transmitted to the second switching element (1120).
  • the sixth via (V6) on the bias line (BL) of the second side (S2) of the substrate (1010) is connected to the inductor (Ind) of the fourth side (S4).
  • the sixth via (V6) connected to the inductor (Ind) serves to allow the DC bias voltage, which is a control voltage, to flow.
  • FIG. 14 shows the reflection loss characteristics and phase variation characteristics according to the on/off of the switching element in the reflective metasurface of FIGS. 10 to 12.
  • Fig. 14(a) shows the reflection loss characteristics according to the on/off of the switching element when radio waves with polarizations of 0, 22.5, 45, 67.5, and 90 degrees are incident on the reflective metasurface.
  • Fig. 14(b) shows the phase variation characteristics according to the on/off of the switching element when radio waves with polarizations of 0, 22.5, 45, 67.5, and 90 degrees are incident on the reflective metasurface.
  • the switching element (1200) exhibits excellent reflection loss performance of -0.83 to -1.24 dB centered around 9 GHz when both are turned on and off. It can be seen that there is almost no change in the reflection loss performance even when the polarization of the radio wave is tilted between 0 and 90 degrees. In addition, it can be seen that the frequency bandwidth over which the reflection loss performance is maintained is 8 to 10 GHz, and the performance is stably maintained over a wide frequency.
  • the phase difference changes by about 180 degrees when the switching element (1200) is turned on/off at about 9 GHz.
  • FIGS. 10 to 12 and 14 it can be confirmed that there is almost no degradation of reflection loss or phase variation performance even when the polarization of a radio wave is tilted and incident when the reflective metasurface (1000) according to the present specification is used.
  • the reflective metasurface (1000) since the reflective metasurface (1000) has a structure that is symmetrical with respect to 0 and 90 degrees, it can be confirmed that it operates with normal RIS for all polarization directions of 0-360 degrees as a result.
  • FIG. 15 shows a structure in which a control unit is formed to perform an on/off control operation of the switching element of the reflective metasurface according to the present specification.
  • control unit (1400) may be implemented as a wireless communication control unit such as RFIC.
  • the control unit (1400) may be disposed on a metal pattern (1130) spaced apart from a ground region (1100g) disposed on the back surface of the substrate (1010), but is not limited thereto and may be changed depending on the application.
  • the reflective metasurface (1000) composed of a plurality of RIS unit cells may be formed in a 4x4 array structure, but is not limited thereto and may be changed depending on the application.
  • unit cells including a first metal patch (1110) and a second patch (1150) may be arranged as a plurality of unit cells (UC11 to UC14, UC41 to UC44) in the first axial direction and the second axial direction.
  • Bias lines (BL11 to BL14, BL41 to BL44) may be arranged in spaces between patches of adjacent cells among the plurality of unit cells (UC11 to UC14, UC41 to UC44).
  • the reflective metasurface (1000) composed of the plurality of unit cells (UC11 to UC14, UC41 to UC44) is not limited to a 4x4 array structure and may be formed in any two-dimensional array structure depending on the application.
  • An inductor can be placed at one point of the bias lines (BL11 to BL14, BL41 to BL44) to block the inflow of RF signals.
  • a control unit (1400) may be connected to a feed line (1120f) connected to a second metal patch (1120) of one or more cells among the RIS unit cells.
  • the control unit (1400) may be arranged on the second surface of the substrate (1010).
  • the control unit (1400) and the modem may be implemented integrally and configured as an RFIC & Modem Chip (RMC).
  • the unit cell connected to the control unit (1400) may be referred to as a Measurement cell (M-cell).
  • the feed line (1120f) may be coupled in a direct feed method that directly connects the second metal patch (1120) and the control unit (1400) and in a coupling feed method that indirectly connects them.
  • the control unit (1400) can analyze the received electromagnetic wave signal to obtain information about the signal. For example, information such as the Received Signal Strength Indicator (RSSI), quality, polarization direction, and angle at which the radio wave is incident can be obtained. Based on this information, the MCU (1450) calculates on/off information of each RIS unit cell capable of transmitting the radio wave in a desired reflection direction according to the radio wave incident conditions. The control unit (1400) linked with the MCU (1450) applies voltage to each unit cell according to the on/off information of each RIS unit cell.
  • RSSI Received Signal Strength Indicator
  • quality quality
  • polarization direction polarization direction
  • angle at which the radio wave is incident can be obtained.
  • the MCU (1450) calculates on/off information of each RIS unit cell capable of transmitting the radio wave in a desired reflection direction according to the radio wave incident conditions.
  • the control unit (1400) linked with the MCU (1450) applies voltage to each unit cell according to the on/off information of each RIS unit cell.
  • the control unit (1400) can be operably coupled with the first and second switching elements (1210, 1220). Meanwhile, the control unit (1400) can control at least one of the first and second switching elements (1210, 1220) to be turned on based on the polarization of the incident radio wave.
  • FIG. 16 shows a current distribution diagram according to the on/off operation of the first and second switching elements.
  • a polarization of a radio wave may be incident in the direction of a first axis.
  • the control unit (1400) may control the radio wave to be reflected through the first switching element (1210) in a first state in which the polarization of the incident radio wave is in a first range of -22.5 degrees to 22.5 degrees with respect to the first axis.
  • a first current path may be formed with a first length from one side of the first metal patch (1110) to an end of the eighth sub-patch (1125) of the second metal patch (1120).
  • the first current path of the first length may be formed in a predetermined range based on 1/2 of a wavelength corresponding to an operating frequency.
  • the operating frequency may correspond to a second frequency of an operating band in which the switching element (1210) is in an on state.
  • the polarization of the radio wave may be incident in a direction tilted by 45 degrees with respect to the first axis.
  • the control unit (1400) may control the radio wave to be reflected through the first switching element (1210) and the second switching element (1220) in a second state in which the polarization of the incident radio wave is in a second range of 22.5 degrees to 67.5 degrees with respect to the first axis.
  • a second current path may be formed with a second length through the fifth sub-patch (1125) of the second metal patch (1120), one side of the first metal patch (1110), and the eighth sub-patch (1128) of the second metal patch (1120).
  • the second current path of the second length may be formed in a predetermined range based on 1/2 of the wavelength corresponding to the operating frequency.
  • the operating frequency may correspond to the second frequency of the operating band in which the switching element (1210) is in the on state.
  • the polarization of the radio wave may be incident in the direction of the second axis.
  • the control unit (1400) may control the radio wave to be reflected through the second switching element (1220) in a third state in which the polarization of the incident radio wave is in a third range of -22.5 degrees to 22.5 degrees with respect to the second axis.
  • a third current path may be formed with a third length from the other side of the first metal patch (1110) to the end of the fifth sub-patch (1125) of the second metal patch (1120).
  • the third current path with the third length may be formed in a predetermined range based on 1/2 of the wavelength corresponding to the operating frequency.
  • the operating frequency may correspond to the second frequency of the operating band in which the switching element (1210) is in the on state.
  • the reflective metasurface (1000a, 1000) can reflect radio waves without causing a degradation in reflection performance regardless of the direction of polarization.
  • the reflective metasurface (1000a, 1000) resonates at a second frequency.
  • the first current length of the unit cell corresponds to half a wavelength of the resonance frequency.
  • the electrical length can be changed depending on the permittivity of the substrate (1010).
  • the reflective metasurface (1000a, 1000) When the polarization of the radio wave is not tilted and is incident in the second axis direction, the reflective metasurface (1000a, 1000) resonates at the second frequency.
  • the third current length of the unit cell corresponds to half a wavelength of the resonant frequency.
  • the electrical length can be changed depending on the permittivity of the substrate (1010).
  • both of the second metal patches (1120) arranged at 0 degrees and 90 degrees are activated. Accordingly, the radio wave having the polarization tilted 45 degrees in the oblique direction can be reflected without a decrease in reflection loss performance. Since the first metal patch (1110) has a polygonal shape close to a circle, it is connected to the two second metal patches (1120) without distortion of the current flow and forms a half-wave current path. Therefore, regardless of whether the polarization of the radio wave is incident at 0 degrees or 45 degrees, there is no significant difference in reflection loss performance.
  • FIGS. 17 to 19 illustrate reflective metasurfaces of different array structures according to embodiments.
  • FIG. 17 illustrates a reflective metasurface (1000) of a square array structure.
  • the reflective metasurface (1000) of the square array structure can be formed as an MXN array structure in the first and second axis directions.
  • it can be formed as unit cells (UC11 to UC14, UC21 to UC24, UC31 to UC34, UC41 to UC44) of the 4X4 array structure in the first and second axis directions.
  • Bias lines (BL11 to BL14, BL21 to BL24, BL31 to BL34, BL41 to BL44) can be arranged to transmit a control voltage to the unit cells of the 4X4 array structure.
  • the distance between unit cells can be spaced apart by 1/2 of the wavelength corresponding to the operating frequency.
  • the distance between unit cells can be set to 15 mm, which is 1/2 of the wavelength, centered at 10 GHz.
  • the distance between cells positioned diagonally is formed to be a distance greater than 1/2 of the wavelength. Therefore, a performance deviation in reflection performance may occur for radio waves incident diagonally on the reflective metasurface (1000) of the square array structure.
  • FIG. 18 shows a reflective metasurface (1000b) of a circular array structure.
  • the reflective metasurface (1000b) of a circular array structure can be formed as an array structure spaced apart from a predetermined angle on a circle having a predetermined radius from a center point.
  • it can be formed of unit cells of a circular array structure (UC11 to UC13, UC21 to UC24, UC31 to UC35, UC41 to UC44, UC51 to UC53) spaced apart from a predetermined angle on a circle having a predetermined radius.
  • Bias lines (BL11 to BL13, BL21 to BL24, BL31 to BL35, BL41 to BL44, BL51 to BL53) can be arranged to transmit a control voltage to the unit cells of the circular array structure.
  • the distance between unit cells can be spaced apart by 1/2 of the wavelength corresponding to the operating frequency.
  • the unit cells can be arranged along a circle having a radius spaced apart by 1/2 of the wavelength based on the center point of the circular array structure.
  • the reflective metasurface (1000b) having a circular array structure can limit the deviation of the reflection loss performance to a certain level or less for radio waves incident in an oblique direction.
  • FIG. 18 shows a reflective metasurface (1000c) of a hexagonal lattice array structure.
  • the hexagonal lattice array structure may be referred to as a honeycomb shape or a zigzag array structure.
  • the reflective metasurface (1000c) of the hexagonal lattice array structure may be formed with a structure in which the unit cells of adjacent rows are shifted by half of the spacing between them.
  • the unit cells (UC11 to UC13, UC21 to UC24, UC31 to UC35, UC41 to UC44, UC51 to UC53) of the hexagonal lattice array structure are shifted by half of the spacing between the unit cells of adjacent rows.
  • Bias lines (BL11 to BL13, BL21 to BL24, BL31 to BL35, BL41 to BL44, BL51 to BL53) can be arranged to transmit control voltages to unit cells having a hexagonal lattice structure.
  • a reflective metasurface (1000c) having a hexagonal lattice array structure can be formed such that three unit cells adjacent in the row and column directions form an equilateral triangle, and the distance (d) between three unit cells adjacent in the row and column directions can be formed as ⁇ /2.
  • the distance from the unit cells of the array structure to the boundary of the ground region can be maintained the same, and the unit cells can be arranged as many as possible, regardless of whether the boundary of the ground region of the substrate has any shape such as a square, polygon, or circle.
  • a first metal patch which is a main patch, in a polygonal or circular structure having a pentagon or larger shape, it is possible to prevent the reflection performance from being deteriorated depending on the polarization direction of an electric wave incident on the reflective metasurface.
  • the switching elements are arranged in mutually perpendicular first and second axis directions of the first metal patch, so that the deviation in the reflection performance of the reflective metasurface depending on the on/off state of the switching elements can be minimized.
  • the reflection performance of the reflective metasurface can be improved, thereby improving wireless communication coverage using the reflective metasurface.
  • the wireless communication coverage using the reflective metasurface can be improved by improving the reflection performance of the reflective metasurface through the overlapping structure between the first and second metal patches.
  • performance attenuation can be minimized through a reflective meta surface of a multilayer substrate structure so that performance attenuation does not occur in a connection structure such as soldering of elements such as switching elements and inductors.

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Abstract

Cette métasurface réfléchissante comprend: une première plaque métallique disposée sur une première surface, qui est la surface la plus à l'extérieur d'un substrat; une deuxième plaque métallique disposée sur une deuxième surface, qui est une couche interne du substrat; des premières sous-plaques et des deuxièmes sous-plaques disposées sur une troisième surface, qui est une couche interne du substrat; une région de masse disposée sur une quatrième surface, qui est la surface la plus à l'extérieur opposée à la première surface du substrat; et un élément de commutation formé dans une région non conductrice qui est formée dans la région de masse de la quatrième surface.
PCT/KR2023/019370 2023-11-28 2023-11-28 Métasurface réfléchissante Pending WO2025116060A1 (fr)

Priority Applications (1)

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PCT/KR2023/019370 WO2025116060A1 (fr) 2023-11-28 2023-11-28 Métasurface réfléchissante

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140120083A (ko) * 2013-04-02 2014-10-13 삼성탈레스 주식회사 다중 편파 마이크로스트립 패치 안테나
US20210313677A1 (en) * 2019-02-20 2021-10-07 Pivotal Commware, Inc. Switchable patch antenna
KR20220030883A (ko) * 2020-09-03 2022-03-11 서울대학교산학협력단 스마트폰 안테나용 메타표면 및 이를 구비한 스마트폰 장치
KR20220070991A (ko) * 2020-11-23 2022-05-31 삼성전기주식회사 안테나 장치
EP4047746A1 (fr) * 2019-10-31 2022-08-24 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Module d'antenne et dispositif électronique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140120083A (ko) * 2013-04-02 2014-10-13 삼성탈레스 주식회사 다중 편파 마이크로스트립 패치 안테나
US20210313677A1 (en) * 2019-02-20 2021-10-07 Pivotal Commware, Inc. Switchable patch antenna
EP4047746A1 (fr) * 2019-10-31 2022-08-24 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Module d'antenne et dispositif électronique
KR20220030883A (ko) * 2020-09-03 2022-03-11 서울대학교산학협력단 스마트폰 안테나용 메타표면 및 이를 구비한 스마트폰 장치
KR20220070991A (ko) * 2020-11-23 2022-05-31 삼성전기주식회사 안테나 장치

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