[go: up one dir, main page]

WO2025153272A1 - Procédé de prédiction d'un effet d'une action de maintenance dans la production de circuits intégrés et appareil associé - Google Patents

Procédé de prédiction d'un effet d'une action de maintenance dans la production de circuits intégrés et appareil associé

Info

Publication number
WO2025153272A1
WO2025153272A1 PCT/EP2024/086477 EP2024086477W WO2025153272A1 WO 2025153272 A1 WO2025153272 A1 WO 2025153272A1 EP 2024086477 W EP2024086477 W EP 2024086477W WO 2025153272 A1 WO2025153272 A1 WO 2025153272A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
substrate loading
status data
maintenance action
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2024/086477
Other languages
English (en)
Inventor
Frans Bernard AARDEN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of WO2025153272A1 publication Critical patent/WO2025153272A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus

Definitions

  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g. including part of a die, one die, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • a single substrate will contain a network of adjacent target portions that are successively patterned. These target portions are commonly referred to as “fields”.
  • the substrate is provided with one or more sets of alignment marks.
  • Each mark is a structure whose position can be measured at a later time using a position sensor, typically an optical position sensor.
  • the lithographic apparatus includes one or more alignment sensors by which positions of marks on a substrate can be measured accurately. Different types of marks and different types of alignment sensors are known from different manufacturers and different products of the same manufacturer.
  • Figure 1 depicts a lithographic apparatus
  • Figure 2 illustrates schematically measurement and exposure processes in the apparatus of Figure 1
  • Figure 3(a) conceptually illustrates the cancelling effect in overlay of wafer table fingerprints in each layer in the absence of a wafer table swap
  • Figure 3(b) conceptually illustrates the performance impact in overlay of such a wafer table swap
  • Figure 4 is a plot of cumulative lots of wafers produced against time, illustrating the concept of A-time, B-time and C-time
  • Figure 5 is a flowchart describing
  • the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and/or a beam expander.
  • the source may be an integral part of the lithographic apparatus, for example when the Confidential source is a mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may for example include an adjuster AD for adjusting the angular intensity distribution of the radiation beam, an integrator IN and a condenser CO.
  • the illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross section.
  • the radiation beam B is incident on the patterning device MA, which is held on the patterning device support MT, and is patterned by the patterning device. Having traversed the patterning device (e.g., mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the patterning device MA e.g., mask
  • the substrate table WTa or WTb can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B, e.g., after mechanical retrieval from a mask library, or during a scan.
  • Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
  • the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).
  • the mask alignment marks may be located between the dies.
  • Small alignment marks may also be included within dies, in amongst the device features, in which case it is desirable that the markers be as small as possible and not require any different imaging or process conditions than adjacent features. The alignment system, which detects the alignment markers is described further below.
  • the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • Other types of lithographic apparatus and modes of operation are possible, as is well-known in the art. For example, a step mode is known. In so-called “maskless” lithography, a programmable patterning device is held stationary but with a changing pattern, and the substrate table WT is moved or scanned. Confidential [0031] Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
  • Lithographic apparatus LA is of a so-called dual stage type which has two substrate tables WTa, WTb and two stations – an exposure station EXP and a measurement station MEA – between which the substrate tables can be exchanged. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station and various preparatory steps carried out. This enables a substantial increase in the throughput of the apparatus.
  • the preparatory steps may include mapping the surface height contours of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS.
  • a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations, relative to reference frame RF.
  • Other arrangements are known and usable instead of the dual-stage arrangement shown.
  • other lithographic apparatuses are known in which a substrate table and a measurement table are provided. These are docked together when performing preparatory measurements, and then undocked while the substrate table undergoes exposure.
  • Figure 2 illustrates the steps to expose target portions (e.g. dies) on a substrate W in the dual stage apparatus of Figure 1.
  • steps performed at a measurement station MEA On the left hand side within a dotted box are steps performed at a measurement station MEA, while the right hand side shows steps performed at the exposure station EXP.
  • one of the substrate tables WTa, WTb will be at the exposure station, while the other is at the measurement station, as described above.
  • a substrate W has already been loaded into the exposure station.
  • a new substrate W’ is loaded to the apparatus by a mechanism not shown. These two substrates are processed in parallel in order to increase the throughput of the lithographic apparatus.
  • this may be a previously unprocessed substrate, prepared with a new photo resist for first time exposure in the apparatus.
  • the lithography process described will be merely one step in a series of exposure and processing steps, so that substrate W’ has been through this apparatus and/or other lithography apparatuses, several times already, and may have subsequent processes to undergo as well.
  • the task is to ensure that new patterns are applied in exactly the correct position on a substrate that has already been subjected to one or more cycles of patterning and processing. These processing steps progressively introduce distortions in the substrate that must be measured and corrected for, to achieve satisfactory overlay performance.
  • the previous and/or subsequent patterning step may be performed in other lithography apparatuses, as just mentioned, and may even be performed in different types of lithography apparatus.
  • some layers in the device manufacturing process which are very demanding in parameters such as resolution and overlay may be performed in a more advanced lithography tool Confidential than other layers that are less demanding. Therefore some layers may be exposed in an immersion type lithography tool, while others are exposed in a ‘dry’ tool. Some layers may be exposed in a tool working at DUV wavelengths, while others are exposed using EUV wavelength radiation.
  • alignment measurements using the substrate marks P1 etc. and image sensors are used to measure and record alignment of the substrate relative to substrate table WTa/WTb. In addition, several alignment marks across the substrate W’ will be measured using alignment sensor AS.
  • the measurements of alignment data for example comprise X and Y positions of alignment targets formed in a fixed or nominally fixed relationship to the product patterns that are the product of the lithographic process.
  • These alignment data taken just before exposure, are used to generate an alignment model with parameters that fit the model to the data.
  • These parameters and the alignment model will be used during the exposure operation to correct positions of patterns applied in the current lithographic step.
  • the model in use interpolates positional deviations between the measured positions.
  • the exposed substrate, now labeled W” is unloaded from the apparatus at step 220, to undergo etching or other processes, in accordance with the exposed pattern.
  • the skilled person will know that the above description is a simplified overview of a number of very detailed steps involved in one example of a real manufacturing situation. For example rather than measuring alignment in a single pass, often there will be separate phases of coarse and fine measurement, using the same or different marks. The coarse and/or fine alignment measurement steps can be performed before or after the height measurement, or interleaved.
  • a lithographic apparatus or scanner requires regular maintenance actions, for example to replace hardware components which are subject to degradation over time. By way of a specific example, the wafer table of a scanner degrades and requires periodic replacement.
  • APC has the potential to correct for this sudden change, but it is too slow as there is no (or insufficient) metrology data for the post-maintenance system, at least for an initial number of lots.
  • the correction loop or APC loop may be restarted and/or recalibrated, which takes time and therefore results in a production delay.
  • production may be continued without such a recalibration; however, this typically results in exposures that are out-of-specification.
  • C- time the time impact of these ramp-down and ramp-up periods with respect to no ramp-up or ramp- Confidential down.
  • C-time is additional to A-time (the nominal downtime for the actual maintenance action) and B-time (a margin applied to the A-time).
  • Figure 4 is a plot of the cumulative number of lots #lots against time showing production rate for a production period (solid line) which includes a ramp-down period, maintenance action and ramp-up period.
  • the A+B time is the period of the actual maintenance action including margin, during which productivity is nil (machine down-time).
  • a perfect loading of a substrate onto a substrate support implies that no strain remains in the loaded substrate once it fully lies on (and is clamped to) the plurality of burls. Any strain locked into the substrate may deform the substrate in the XY plane and thereby cause overlay errors. Local sliding of the substrate may take place when loading the substrate onto the substrate support. The residual deformations in the substrate caused by this local sliding contributes to the overlay error.
  • the WLG induced error metric is a metric for quantifying the (correctable) error introduced by this deformation.
  • Wafer clamping may comprise a sequence of wafer loading from e-pins to the substrate holder or wafer table.
  • WLG also causes a wafer-to-wafer deformation that is not correctable by any correction mechanism, i.e., this represents a non-correctable error (NCE).
  • NCE non-correctable error
  • OPO on- product overlay
  • a maintenance action may be periodically performed to replace or recondition the wafer table.
  • the wafer table swap will have a consequent WIP impact because the process corrections will not match the re-conditioned wafer table. Confidential Either the process corrections are reset and re-calibrated or the process corrections are automatically recovered.
  • the parameter of interest may be a substrate loading distortion induced error metric (e.g., a WLG induced error metric) which is dependent on the WLG.
  • the WLG induced error metric may be the (e.g., overlay) CE content resultant from the WLG, although other WLG dependent metrics are possible.
  • the method may predict two CE jump magnitudes.
  • the method may use input data DATIN comprising: [0061] measured absolute WLG status data (or substrate loading distortion status data) 500 describing the absolute WLG status of the system (e.g. for example as may be quantified by measuring an overlay difference between reference wafers which are respectively sensitive and insensitive to the WLG or any other suitable method). [0062] Layer timings 505; e.g., the times/dates that each layer (or at least the zero layer and target layer or last exposed layer) is exposed per wafer or group of wafers (e.g., per FOUP). [0063] On-product metrology data or derived data, derived from the on-product metrology data 510.
  • the on-product metrology data 510 and typical WLG shape model 515 may be used to obtain 520 on-product WLG induced error metric data 525 (e.g., on-product WLG CE metric data describing the WLG contribution to the metrology data 510, or WLG CE content).
  • the on-product WLG contribution can be isolated from the on-product metrology data 510 using the WLG shape model 515. Better isolation may be achieved by using alignment data or derived correction data, as it is more difficult to distinguish the on-product WLG contribution from other (process) effects, compared to using on-product-overlay data.
  • the proposed prediction method WLG PRED uses the input data DATIN to make CE jump predictions, e.g., based on the insight that there is in-resist propagation of the WLG shape during stack build-up; i.e. the CE is a layer-to-layer error. It does not only depend on the WLG deterioration when clamping the wafer to expose the current layer, but also on the in-resist WLG shape that is already present on the wafer due to exposure of earlier layers.
  • the absolute WLG status metric 500 is used to determine per-date WLG status metric data 530 (e.g., a WLG status drift curve).
  • the combination of wafer table roughness and wafer backside roughness determine the WLG effect. Since different layers in the stack will have different wafer backside properties, the sensitivities due to WLG may differ per layer. In a simpler example, these sensitivities may be estimated from earlier calibrated layers that have similar physical wafer (backside) properties. [0070] At step S4, the calibrated sensitivities 555, the WLG status at moment of zero layer exposure, and the current WLG status are input to a layer-to-layer model 560.
  • ⁇ ⁇ ⁇ ⁇ , e.g., such that each represents the “present day” in each of the first and second jump determinations (e.g., where both layer N and the zero layer were exposed just before the maintenance action for the determination of both jumps).
  • the real timings of the exposed layers may be used.
  • an embodiment may comprise using real timing of zero layer exposure date pre-maintenance action instead of assuming all zero layers of Wafers In Process (WIP) were exposed at a single time t0; e.g., immediately before the maintenance action.
  • WIP Wafers In Process
  • the first jump in the correctable error comprising a magnitude of the difference of the respective magnitudes of corrections CORRN and corrections CORR’N.
  • the WLG is effectively zero for both layers.
  • the above concepts are described in relation to determining a CE jump. However, it can also be appreciated that wafer-to-wafer NCE will cause a post-maintenance action jump in NCE. Such NCE jumps may be predicted in a similar way as the CE jumps. The NCE jump prediction may be relevant to determine applicability of a WIPless maintenance action strategy for example.
  • said per-layer substrate loading distortion status data comprises at least zero layer substrate loading distortion status data corresponding to a time of exposure of a zero layer on the substrate, the zero layer being the first layer exposed on said substrate; and said at least one per-layer sensitivity value comprises at least one zero layer sensitivity value describing a sensitivity of the substrate loading distortion induced error metric to said zero layer substrate loading distortion status data.
  • said method comprises determining a per-layer model for at least the target layer and zero layer, the per-layer model describing said substrate loading distortion induced error metric in terms of a combination of the first product and second product. 10.
  • said per-layer substrate loading distortion status data comprises at least an aligned-to layer substrate loading distortion status data corresponding to a time of exposure of an aligned-to layer to which said target layer is being aligned to; and said at least one per-layer sensitivity value comprises at least one aligned-to layer sensitivity value describing a sensitivity of the substrate loading distortion induced error metric to said aligned-to layer substrate loading distortion status data.
  • 24. A method as set out in any of clauses 1 to 17, comprising using a respective assumed or predicted value for each of said at least one per-layer sensitivity value.
  • Confidential 25. A method as set out any preceding clause, comprising scheduling a maintenance action based on the determined effect of the potential substrate table maintenance action.
  • 28. A computer program comprising program instructions operable to perform the method of any of clauses 1 to 27, when run on a suitable apparatus.
  • 29. A non-transient computer program carrier comprising the computer program of clause 28.
  • 30. A processing system comprising a processor and a storage device comprising the computer program of clause 28.
  • a lithographic apparatus comprising the processing system of clause 30.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé permettant de prédire un effet d'une action potentielle de maintenance de table de substrat se rapportant à une table de substrat d'un appareil lithographique. Le procédé consiste à obtenir des données d'état de distorsion de chargement de substrat par couche concernant une distorsion d'un substrat ou d'un groupe de substrats provoquée par le chargement du substrat sur ladite table de substrat lors de l'exposition d'une ou de plusieurs couches ; à obtenir au moins une valeur de sensibilité par couche qui décrit une sensibilité d'une métrique d'erreur induite par distorsion de chargement de substrat auxdites données d'état de distorsion de chargement de substrat pour une ou plusieurs couches respectives sur ledit substrat ; et à déterminer l'effet d'une action potentielle de maintenance de table de substrat sur ladite métrique d'erreur induite par distorsion de chargement de substrat sur la base desdites données d'état de distorsion de chargement de substrat et de ladite ou desdites valeurs de sensibilité par couche.
PCT/EP2024/086477 2024-01-15 2024-12-16 Procédé de prédiction d'un effet d'une action de maintenance dans la production de circuits intégrés et appareil associé Pending WO2025153272A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP24151768 2024-01-15
EP24151768.9 2024-01-15

Publications (1)

Publication Number Publication Date
WO2025153272A1 true WO2025153272A1 (fr) 2025-07-24

Family

ID=89619578

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2024/086477 Pending WO2025153272A1 (fr) 2024-01-15 2024-12-16 Procédé de prédiction d'un effet d'une action de maintenance dans la production de circuits intégrés et appareil associé

Country Status (1)

Country Link
WO (1) WO2025153272A1 (fr)

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060033921A1 (en) 2004-08-16 2006-02-16 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2009078708A1 (fr) 2007-12-17 2009-06-25 Asml Netherlands B.V. Outil et procédé de métrologie de superposition à base de diffraction
WO2009106279A1 (fr) 2008-02-29 2009-09-03 Asml Netherlands B.V. Procédé et appareil de métrologie, appareil lithographique et procédé de fabrication de dispositif
US20100201963A1 (en) 2009-02-11 2010-08-12 Asml Netherlands B.V. Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method
US20110027704A1 (en) 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US20110043791A1 (en) 2009-08-24 2011-02-24 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate
US20110102753A1 (en) 2008-04-21 2011-05-05 Asml Netherlands B.V. Apparatus and Method of Measuring a Property of a Substrate
US20120044470A1 (en) 2010-08-18 2012-02-23 Asml Netherlands B.V. Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method
US20120123581A1 (en) 2010-11-12 2012-05-17 Asml Netherlands B.V. Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method
US20130258310A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
US20130271740A1 (en) 2012-04-16 2013-10-17 Asml Netherlands B.V. Lithographic Apparatus, Substrate and Device Manufacturing Method
WO2013178422A1 (fr) 2012-05-29 2013-12-05 Asml Netherlands B.V. Procédé et appareil de métrologie, substrat, système lithographique et procédé de fabrication de dispositif
WO2020099050A1 (fr) * 2018-11-16 2020-05-22 Asml Netherlands B.V. Procédé de surveillance d'appareil lithographique
WO2023222310A1 (fr) * 2022-05-16 2023-11-23 Asml Netherlands B.V. Procédé d'optimisation de la maintenance d'un appareil lithographique

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060066855A1 (en) 2004-08-16 2006-03-30 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20060033921A1 (en) 2004-08-16 2006-02-16 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2009078708A1 (fr) 2007-12-17 2009-06-25 Asml Netherlands B.V. Outil et procédé de métrologie de superposition à base de diffraction
WO2009106279A1 (fr) 2008-02-29 2009-09-03 Asml Netherlands B.V. Procédé et appareil de métrologie, appareil lithographique et procédé de fabrication de dispositif
US20110102753A1 (en) 2008-04-21 2011-05-05 Asml Netherlands B.V. Apparatus and Method of Measuring a Property of a Substrate
US20100201963A1 (en) 2009-02-11 2010-08-12 Asml Netherlands B.V. Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method
US20110027704A1 (en) 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US20110043791A1 (en) 2009-08-24 2011-02-24 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate
US20120044470A1 (en) 2010-08-18 2012-02-23 Asml Netherlands B.V. Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method
US20120123581A1 (en) 2010-11-12 2012-05-17 Asml Netherlands B.V. Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method
US20130258310A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
US20130271740A1 (en) 2012-04-16 2013-10-17 Asml Netherlands B.V. Lithographic Apparatus, Substrate and Device Manufacturing Method
WO2013178422A1 (fr) 2012-05-29 2013-12-05 Asml Netherlands B.V. Procédé et appareil de métrologie, substrat, système lithographique et procédé de fabrication de dispositif
WO2020099050A1 (fr) * 2018-11-16 2020-05-22 Asml Netherlands B.V. Procédé de surveillance d'appareil lithographique
WO2023222310A1 (fr) * 2022-05-16 2023-11-23 Asml Netherlands B.V. Procédé d'optimisation de la maintenance d'un appareil lithographique

Similar Documents

Publication Publication Date Title
US11493851B2 (en) Lithographic method and lithographic apparatus
US8976355B2 (en) Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods
US11392044B2 (en) Method of determining a position of a feature
CN114207527B (zh) 用于控制半导体制造过程的方法
US20250251668A1 (en) Method of optimizing maintenance of a lithographic apparatus
EP4279992A1 (fr) Procédé d'optimisation de la maintenance d'un appareil de lithographie
KR102353128B1 (ko) 기판 내의 응력을 결정하는 방법들, 리소그래피 공정을 제어하는 제어 시스템, 리소그래피 장치 및 컴퓨터 프로그램 제품
WO2025153272A1 (fr) Procédé de prédiction d'un effet d'une action de maintenance dans la production de circuits intégrés et appareil associé
EP4653953A1 (fr) Procédé de prédiction d'un effet sur un produit d'une grille de charge de tranche
US20220244649A1 (en) Sub-field control of a lithographic process and associated apparatus
WO2024160498A1 (fr) Procédé pour effectuer une action de maintenance sur un appareil lithographique
TW202449525A (zh) 預測曝光設備上之元件漂移的方法
TW202532974A (zh) 判定取樣方案之方法及相關度量衡方法
WO2021151565A1 (fr) Procédé de métrologie, métrologie associée et appareils lithographiques associés
CN119317871A (zh) 用于监测光刻系统的一个或更多个部件适当起作用的方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24824773

Country of ref document: EP

Kind code of ref document: A1