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WO2025096119A1 - Système de distribution de vapeur avec récipient à volume de charge - Google Patents

Système de distribution de vapeur avec récipient à volume de charge Download PDF

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Publication number
WO2025096119A1
WO2025096119A1 PCT/US2024/049585 US2024049585W WO2025096119A1 WO 2025096119 A1 WO2025096119 A1 WO 2025096119A1 US 2024049585 W US2024049585 W US 2024049585W WO 2025096119 A1 WO2025096119 A1 WO 2025096119A1
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WO
WIPO (PCT)
Prior art keywords
vapor
valve
outlet
processing chamber
charge volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/049585
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English (en)
Inventor
Jaykumar Atulbhai BHALODIA
Karthik Rangaraju
Emile Charles DRAPER
Matthew Palmer KWAN
Thomas Pratt
Dustin Zachary Austin
Subashchandra Gangadhar RAI
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Lam Research Corp
Original Assignee
Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of WO2025096119A1 publication Critical patent/WO2025096119A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Definitions

  • the present disclosure relates to substrate processing systems, and more particularly to a vapor delivery system with a charge volume container for supplying vapor precursor.
  • Substrate processing systems may be used to treat substrates such as semiconductor wafers.
  • the substrate treatments may include deposition, etching, cleaning, and/or other treatments.
  • a substrate may be arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device.
  • radio frequency (RF) plasma may be used to initiate chemical reactions.
  • Some treatments require vapor-based precursors that are generated using flow over vapor (FOV) systems and/or bubblers. It can be difficult to generate vapor when a solid or liquid precursor has low vapor pressure.
  • FOV flow over vapor
  • a vapor delivery system configured to deliver precursor vapor to a processing chamber of a substrate processing system includes a vapor generator storing precursor and including an inlet and an outlet.
  • a first valve includes an inlet and an outlet. The inlet of the first valve is in fluid communication with an outlet of the vapor generator.
  • a charge volume container includes an inlet in fluid communication with an outlet of the first valve.
  • a second valve includes an inlet and an outlet. The inlet of the second valve is in fluid communication with an outlet of the charge volume container.
  • An orifice is in fluid communication with an outlet of the second valve and the processing chamber.
  • a third valve includes an inlet and an outlet. The inlet of the third valve is in fluid communication with an outlet of the orifice and an outlet in fluid communication with at least one of the processing chamber.
  • the processing chamber operates at a process pressure.
  • a controller is configured to cause precursor vapor to accumulate in the charge volume container at a dose pressure equal to or greater than the process pressure of the processing chamber and cause the charge volume container to sequentially deliver one or more dose pulses of the precursor vapor from the charge volume container to the processing chamber.
  • a pressure sensor is configured to sense pressure at an outlet of the orifice.
  • the vapor generator comprises a flow over vapor-type vapor generator.
  • the vapor generator comprises a bubbler-type vapor generator.
  • the vapor generator includes a heater. A plurality of gas lines fluidly connecting the charge volume container, the first valve, the second valve, and the orifice.
  • a heater is configured to heat the plurality of gas lines, the charge volume container, the first valve, the second valve, and the orifice to a predetermined temperature to prevent condensation of the precursor vapor therein.
  • the dose pressure is greater than 1 .5 times the process pressure.
  • the dose pressure is greater than or equal to twice the process pressure.
  • the one or more dose pulses includes 10 or more dose pulses and wherein a duration of each dose pulse is in a range from 0.5s to 5s.
  • the charge volume container delivers the precursor vapor to two or more additional processing chambers.
  • a method for delivering precursor vapor to a processing chamber of a substrate processing system includes storing precursor in a vapor generator including an inlet and an outlet; fluidly connecting an inlet of a first valve to an outlet of the vapor generator; fluidly connecting an inlet of a charge volume container to an outlet of the first valve; fluidly connecting an inlet of a second valve to an outlet of the charge volume container; fluidly connecting an orifice between an outlet of the second valve and the processing chamber; operating the processing chamber at a process pressure; causing precursor vapor from a vapor generator to accumulate in the charge volume container at a dose pressure equal to or greater than the process pressure of the processing chamber; and causing the charge volume container to sequentially deliver one or more dose pulses of the precursor vapor to the processing chamber.
  • the method includes using an orifice and a first valve to supply the precursor vapor to the processing chamber; and sensing pressure at an outlet of the orifice.
  • the vapor generator comprises a flow over vapor-type vapor generator.
  • the vapor generator comprises a bubbler-type vapor generator.
  • the vapor generator includes a heater.
  • the method includes fluidly connecting the charge volume container using a second valve, the orifice, and the first valve using a plurality of gas lines.
  • the method includes heating the plurality of gas lines, the second valve, the orifice, and the first valve to a predetermined temperature to prevent condensation of the precursor vapor therein.
  • the dose pressure is greater than 1.5 times the process pressure.
  • the dose pressure is greater than or equal to twice the process pressure.
  • the one or more dose pulses includes 10 or more dose pulses and wherein a duration of each dose pulse is in a range from 0.5s to 5s.
  • the method includes delivering the precursor vapor from the charge volume container to two or more additional processing chambers.
  • FIG. 1A is a functional block diagram of an example of a substrate processing system including one or more processing chambers supplied by a vapor delivery system including a charge volume container according to the present disclosure
  • FIG. 1 B is a functional block diagram of an example of a charge volume container configured to accumulate and store precursor vapor to supply multiple processing chambers (or stations) of a substrate processing system according to the present disclosure
  • FIG. 1 C is a functional block diagram of an example of a plurality of charge volume containers supplying a plurality of processing chambers or stations of a substrate processing system according to the present disclosure
  • FIG. 2A is a functional block diagram of an example of a flow-over-vapor (FOV) system for supplying precursor vapor to one or more processing chambers according to the present disclosure
  • FOV flow-over-vapor
  • FIG. 2B is a functional block diagram of an example of a bubbler system for supplying precursor vapor according to the present disclosure
  • FIG. 3 is an example of timing of a plurality of dose pulses of the precursor vapor supplied to one or more processing chambers according to the present disclosure.
  • FIG. 4 is a flowchart of an example of a method for supplying precursor vapor to one or more processing chambers or stations according to the present disclosure.
  • liquid precursor is converted to vapor phase by a vapor generator and delivered to one or more processing chambers (or stations) of a substrate processing system.
  • Some precursors are solid at room temperature and are heated above a corresponding melting temperature to form a liquid and/or to increase vapor pressure of the precursor.
  • Other precursors are liquid at room temperature and are heated to increase vapor pressure.
  • Carrier gas is supplied to an inlet of the vapor generator.
  • the carrier gas entrains the precursor vapor.
  • the carrier gas and the precursor vapor are supplied at an outlet of the vapor generator and delivered by gas lines to the processing chamber(s) in the vapor phase.
  • Vapor generation of some precursors is limited by a vapor pressure of the heated liquid precursor. Additionally, transport of the precursor vapor is limited to saturation of the carrier gas. Some precursors (e.g., metal-organic compound of molybdenum precursor) have low vapor pressure (e.g., 1 Torr at 90 Q C). When using precursors with low vapor pressure, the vapor generator may not supply a sufficient amount of the precursor vapor to the processing chamber and/or station. In other words, the flow rate of the precursor vapor may not be sufficient to ensure film thickness uniformity due to the low vapor pressure of the precursor and/or high chamber processing pressure.
  • precursors e.g., metal-organic compound of molybdenum precursor
  • the vapor generator may not supply a sufficient amount of the precursor vapor to the processing chamber and/or station. In other words, the flow rate of the precursor vapor may not be sufficient to ensure film thickness uniformity due to the low vapor pressure of the precursor and/or high chamber processing pressure.
  • the precursor vapor when depositing film using chemical vapor deposition (CVD), atomic layer deposition (ALD) or another deposition process, the precursor vapor may be delivered to the processing chamber(s) using a plurality of short dose pulses (e.g., 10 or more pulses each lasting in a range from 0.5s to 5s (e.g., 2s)).
  • the precursor vapor is delivered to the processing chamber(s), the substrate is exposed to the precursor vapor for a dose period, reactants are purged from the processing chamber(s), and the dose process repeats a predetermined number of times.
  • the precursor vapor is delivered to the processing chamber(s), the substrate is exposed to the precursor vapor for a dose period, plasma is struck for a plasma period, reactants are purged from the processing chamber(s), and the dose/plasma process repeats a predetermined number of times.
  • a vapor delivery system includes a charge volume container configured to store or accumulate precursor vapor.
  • the charge volume container (and corresponding gas lines) store the precursor vapor at a predetermined pressure that is equal to or higher than a processing pressure used in the processing chamber and/or stations.
  • components of the precursor vapor delivery system such as the charge volume container, gas lines, valves, etc. are heated above a predetermined temperature (e.g., 90 Q C) to avoid condensation of the precursor therein.
  • a substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate support 106.
  • the substrate support 106 includes an electrostatic chuck (ESC).
  • ESC electrostatic chuck
  • a substrate 108 is arranged on the substrate support 106.
  • the substrate support 106 includes a baseplate 1 10.
  • the baseplate 110 is made of a conducting material such as aluminum.
  • the baseplate 1 10 supports a top plate 112, which may be made of ceramic or another plasma resistor material.
  • a bond layer 1 14 bonds the top plate 1 12 to the baseplate 1 10.
  • the baseplate 1 10 may include one or more coolant channels 1 16 for flowing coolant through the baseplate 1 10.
  • a gas delivery system 130 includes one or more gas sources 132.
  • the gas sources 132 supply one or more process gas mixtures.
  • the process gas mixture may include carrier gas, purge gases, inert gases, deposition precursor gases, etc.
  • the gas sources 132 are connected by flow metering devices 134 (e.g., mass flow controllers (MFCs) and/or valves) to a manifold 140 for mixing. An output of the manifold 140 is fed to the gas distribution device 104.
  • MFCs mass flow controllers
  • the substrate processing system may also include a vapor delivery system 168 configured to deliver precursor vapor.
  • the vapor delivery system 168 includes a vapor generator 170 configured to supply vapor.
  • the vapor generator 170 generates vapor that is output to a gas line 175 connected to inlets of valves 174 and 180.
  • An outlet of the valve 174 is fluidly connected by the gas line 175 to an inlet of a charge volume container 176.
  • the charge volume container 176 has a volume that is sufficiently large to handle supply of the plurality of pulses to the processing chamber and/or stations that are supplied by the vapor delivery system 168 during operation.
  • An outlet of the charge volume container 176 is fluidly connected by the gas line 175 to an inlet of a valve 178.
  • An outlet of the valve 178 is fluidly connected by the gas line 175 to an orifice 186.
  • one or more heaters 190 may be used to heat the charge volume container 176, the gas lines 175, the valves 174, 178, 180, and/or the orifice 186 to a predetermined temperature.
  • these components may be wrapped in an insulating layer 192 including embedded resistive heaters 193.
  • the predetermined temperature is in a range from 50 Q C to 150 Q C. In some examples, the predetermined temperature is 90 Q C.
  • a pressure sensor 184 monitors pressure at the outlet of the orifice 186.
  • An outlet of the orifice 186 is fluidly connected by the gas lines 175 and a valve 185 to the processing chamber 102.
  • the outlet of the orifice 186 is optionally fluidly connected by the gas lines 175 to one or more additional processing chambers (via corresponding valves 185).
  • a temperature controller 142 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the top plate 1 12.
  • the temperature controller 142 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing.
  • the temperature controller 142 also operates a coolant assembly 146 that controls coolant flow through the coolant channels 116.
  • the coolant assembly 146 may include a coolant pump and coolant reservoir (not shown).
  • the temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channels 1 16 to cool the substrate support 106.
  • a similar temperature control system (not shown) including coolant channels and/or resistive heaters may be arranged in the showerhead or other gas distribution device to control the temperature of the showerhead or other gas distribution device.
  • a valve 150 and a pump 152 are connected to a gas line 148 (e.g., an exhaust gas line) and are used to control pressure within the processing chamber 102 and/or to evacuate reactants from the processing chamber 102.
  • a gas line 148 e.g., an exhaust gas line
  • a plasma generator 154 includes a radio frequency (RF) source 156 to output RF voltage/power to a matching network 158.
  • the matching network 158 matches the impedance of the RF source 156 to the impedance of the load including components of the processing chamber and/or plasma.
  • a controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe.
  • One or more robots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106.
  • the RF power is supplied to the baseplate 1 10 and the showerhead is grounded or floating. In other examples, the RF power is supplied to the showerhead and the baseplate 1 10 is grounded or floating.
  • the gas distribution device 104 includes a gas plenum 182 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 168 to gas through holes 187 passing through an electrode 189.
  • the substrate processing system can include more than one processing chamber or station.
  • the charge volume container (CVC) 176 of the vapor delivery system 168’ supplies precursor vapor via S valves 185-1 , 185-2, ..., and 185-S to S processing chambers or stations 194-1 , 194-2, ..., and 194-S of the substrate processing system, where S is an integer greater than one.
  • the charge volume container 176 has a one to many relationship with the processing chambers or stations.
  • less than all of the V valves 185 are opened for a given dose or group of doses of precursor vapor.
  • some processing chambers can use a different recipe (e.g., receiving fewer or no doses of precursor vapor).
  • the vapor delivery system 168 supplies precursor vapor via S valves 185-1 , 185-2, ..., and 185-S to V charge volume containers 176-1 , 176-2, ..., and 176-V.
  • the V charge volume containers 176- 1 ,..., and 176-V supply precursor vapor to the S processing chambers or stations 194-1 , 194-2, ..., and 194-S of the substrate processing system, where V is an integer greater than one.
  • the charge volume container 176 has a many to many or a one to one relationship with the processing chambers or stations.
  • V S.
  • a single vapor generator supplies the V charge volume containers 176-1 , 176-2, ..., and 176-V. In other examples, one or more vapor generators supply the V charge volume containers 176-1 , ..., and 176-V.
  • the vapor generator 170’ includes an ampoule 210 (e.g., a sealed chamber) including an inlet 212 and an outlet 214.
  • the ampoule has a cylindrical or prismatic shape, although other shapes can be used.
  • the ampoule 210 stores solid or liquid precursor 220.
  • a heater 224 heats the ampoule 210 to a predetermined temperature (e.g., greater than a melting temperature of solid precursor if solid precursor is used).
  • a gas source 218 supplies carrier gas to the inlet 212 of the ampoule 210.
  • the carrier gas is supplied at a pressure P2 that is higher than or equal to an operating pressure P1 of the processing chamber(s).
  • the carrier gas flows through the inlet and over the liquid precursor in the ampoule 210 to entrain vapor generated by the liquid precursor 220.
  • the vapor generator 170 outputs the carrier gas and the entrained precursor vapor via the outlet.
  • the vapor generator 170 includes the ampoule 210 including an inlet and an outlet.
  • the ampoule 210 stores liquid precursor 220 (or solid precursor that has been melted to liquid).
  • a heater 224 heats the ampoule 210 to a predetermined temperature greater than a melting temperature of the precursor.
  • Carrier gas from the gas source 218 is delivered in the liquid precursor to generate bubbles 228 that increase vapor generation.
  • the carrier gas flows through the liquid precursor and entrains precursor vapor.
  • the vapor generator 170 outputs the carrier gas and the entrained vapor via the outlet.
  • the vapor generator 170” includes a gas distribution device 230 including a gas plenum 232 and gas through holes 234 to distribute the bubbles 228 within the liquid precursor.
  • an operating pressure P2 of the vapor generator 170 and the charge volume container is greater than or equal to a pressure P1 of the processing chamber 102 receiving the vapor. In some examples, P2 > 1.5*P1. In some examples, P2 > 2*P1. In some examples, P2 > 3*P1.
  • the charge volume container 176 supplies a substrate processing system including four (4) processing chambers or stations.
  • the charge volume container 176 has a volume that is sufficiently large to handle supply of the plurality of pulses to the processing chamber and/or stations that are supplied by the vapor delivery system 168 during operation.
  • the charge volume container has a volume in a range from 1 .0L to 3.5L (e.g., 2.0L) and gas lines store additional vapor (e.g., additional volume in a range from 0.3L to 1.2L (e.g., 0.7L), although larger or smaller volumes may be used for a given application.
  • the orifice 186 has an opening in a range from 0.07 to 0.25” (e.g., 0.110”), although other sizes may be used.
  • the size of the orifice will vary for a given application due to variations in the chamber and charge volume container pressures, dose levels, precursor species, number of stations, dose time, and/or other parameters.
  • the pressure in the charge volume container is 140 to 160 Torr for a process running at 45 to 55 Torr, although other pressures can be used.
  • the substrate processing system may be used to perform pulsed deposition such as pulsed CVD or ALD (with or without plasma).
  • pulsed deposition such as pulsed CVD or ALD (with or without plasma).
  • the valve 178 is opened for a predetermined period and then closed to supply a precursor dose to the processing chamber(s).
  • the valve 178 is opened and closed a predetermined number of times to deliver dose pulses of the precursor vapor to the processing chamber(s).
  • the processing chamber purges the processing chamber(s) after a dose period.
  • the processing chamber strikes plasma after each dose period and then purges the processing chamber(s).
  • FIG. 4 a method 400 for generating precursor vapor according to the present disclosure is shown.
  • solid or liquid precursor is arranged in the ampoule.
  • the ampoule is heated to a first predetermined temperature (greater than a melting temperature of the solid precursor if used).
  • the charge volume container, the gas lines, the valves, and/or the orifice are heated to a second predetermined temperature.
  • the first and second predetermined temperatures may be the same or different.
  • carrier gas is supplied to the vapor generator (in either FOV or bubbler configurations).
  • the carrier gas entrains the precursor vapor.
  • the vapor and carrier gas accumulate in the charge volume container at a predetermined pressure P2.
  • the method determines whether the substrate is ready for delivery of the precursor vapor. If 422 is true, the precursor vapor is supplied to the processing chamber(s) (operating at pressure P7) at 426. If 422 is false, the method returns to 410.
  • the method determines whether the dose period is up. When 428 is true, the method optionally purges the processing chamber(s). Alternately, the method strikes plasma for a predetermined plasma period, extinguishes the plasma, and then purges the processing chamber(s) at 430.
  • the method determines whether another dose of the precursor vapor is required at 432. If 432 is false, the method ends. If 432 is true, the method determines at 434 whether it is time for the next dose of the precursor vapor. If 434 is true, the method returns to 428.
  • the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”
  • a controller is part of a system, which may be part of the above-described examples.
  • Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform, or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
  • These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
  • the electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems.
  • the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
  • temperature settings e.g., heating and/or cooling
  • RF radio frequency
  • the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
  • the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
  • Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
  • the operational parameters may, in some examples, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
  • the controller in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof.
  • the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
  • the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.
  • a remote computer can provide process recipes to a system over a network, which may include a local network or the Internet.
  • the remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer.
  • the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.
  • the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein.
  • An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
  • example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • ALE atomic layer etch
  • the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un système de distribution de vapeur qui distribue de la vapeur de précurseur à une chambre de traitement d'un système de traitement de substrat, comporte un précurseur de stockage de générateur de vapeur. Une première vanne comprend une admission reliée à une sortie du générateur de vapeur. Un récipient à volume de charge comporte une admission reliée à une sortie de la première vanne. Une deuxième vanne compote une admission reliée à une sortie du récipient à volume de charge. Un orifice est relié à une sortie de la deuxième vanne et à la chambre de traitement. Une troisième vanne comporte une admission reliée à une sortie de l'orifice et une sortie reliée à au moins une chambre de traitement. Un dispositif de régulation est conçu pour amener la vapeur de précurseur à s'accumuler dans le récipient de volume de charge à une pression de dose supérieure ou égale à une pression de traitement, et à amener le récipient de volume de charge à délivrer une ou plusieurs doses pulsées.
PCT/US2024/049585 2023-10-31 2024-10-02 Système de distribution de vapeur avec récipient à volume de charge Pending WO2025096119A1 (fr)

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US63/546,585 2023-10-31

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117383A1 (en) * 2002-09-11 2007-05-24 Planar Systems, Inc. Precursor material delivery system with staging volume for atomic layer deposition
JP2014114463A (ja) * 2012-12-06 2014-06-26 Fujikin Inc 原料気化供給装置
US20170342562A1 (en) * 2016-05-31 2017-11-30 Lam Research Corporation Vapor manifold with integrated vapor concentration sensor
US20190119813A1 (en) * 2017-10-23 2019-04-25 Applied Materials, Inc. Low vapor pressure chemical delivery
KR20210065877A (ko) * 2019-11-27 2021-06-04 가부시키가이샤 호리바 에스텍 액체 재료 기화 장치, 액체 재료 기화 장치의 제어 방법, 및, 액체 재료 기화 장치용 프로그램이 기록된 프로그램 기록 매체

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117383A1 (en) * 2002-09-11 2007-05-24 Planar Systems, Inc. Precursor material delivery system with staging volume for atomic layer deposition
JP2014114463A (ja) * 2012-12-06 2014-06-26 Fujikin Inc 原料気化供給装置
US20170342562A1 (en) * 2016-05-31 2017-11-30 Lam Research Corporation Vapor manifold with integrated vapor concentration sensor
US20190119813A1 (en) * 2017-10-23 2019-04-25 Applied Materials, Inc. Low vapor pressure chemical delivery
KR20210065877A (ko) * 2019-11-27 2021-06-04 가부시키가이샤 호리바 에스텍 액체 재료 기화 장치, 액체 재료 기화 장치의 제어 방법, 및, 액체 재료 기화 장치용 프로그램이 기록된 프로그램 기록 매체

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