[go: up one dir, main page]

WO2025051364A1 - Fusion continue de silicium pour procédés en aval - Google Patents

Fusion continue de silicium pour procédés en aval Download PDF

Info

Publication number
WO2025051364A1
WO2025051364A1 PCT/EP2023/074591 EP2023074591W WO2025051364A1 WO 2025051364 A1 WO2025051364 A1 WO 2025051364A1 EP 2023074591 W EP2023074591 W EP 2023074591W WO 2025051364 A1 WO2025051364 A1 WO 2025051364A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
particles
melt
melting
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2023/074591
Other languages
German (de)
English (en)
Inventor
Sebastian Knoer
Andreas Baumgartner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to PCT/EP2023/074591 priority Critical patent/WO2025051364A1/fr
Publication of WO2025051364A1 publication Critical patent/WO2025051364A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/45—Aggregated particles or particles with an intergrown morphology
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

Definitions

  • the present invention relates to a process for the continuous preparation of silicon melt with immediate subsequent further processing, comprising the steps of (A) providing solid silicon in a melting container, (B) tempering the melting container to form a silicon melt, (C) feeding solid silicon, wherein the fed solid silicon is melted, and (D) directly feeding the resulting silicon melt to a processing unit for molten silicon.
  • the invention is also directed to processed products of silicon and their use.
  • EP 3841225 A1 describes a process for the continuous preparation and processing (here: atomization) of molten metal, it is necessary to transfer the liquid melt through several containers before it can be further processed by atomization. This complex transfer of melt to further processing leads to high operating costs and complex plant construction, while also being highly error-prone.
  • EP 0372918 B1 is also directed to a process for the continuous production of silicon powder, wherein silicon is melted in a melting furnace, poured off at the top of the melting furnace, refined and alloyed in a further reaction unit, temporarily stored in a holding furnace and then transferred to a processing unit - in this case an atomization device.
  • the process described here requires a very complex process control in which silicon melt, which is already difficult to handle due to its high temperature, has to be transported across several reactor compartments until the melt is processed. Because the molten silicon is poured off at the top of the melting furnace together with any slag that may be formed and which floats on top of the melt, a further purification step for silicon is necessary. Overall, the process described in EP 0372918 B1 is very complex, time-consuming and therefore prone to errors.
  • DE 3737130 A1 represents a further development of the system from DE 3533964 C1, whereby the melt is generated in a melting device spatially separated from the Laval nozzle system and is transported to the Laval nozzle system via a U-tube.
  • DE 3737130 A1 thus pursues the objective of ensuring that the melt jet to be atomized has a particularly uniform material flow. In this way, metal particles can be particularly can be produced reproducibly.
  • the process described requires a very complex reaction procedure and is not described in connection with silicon.
  • EP 3083107 B1 describes a crucible-free melting and atomization process for metals, in which a specially prepared metal rod is melted within an induction coil to generate a molten stream, which is then introduced directly into the atomization nozzle. The process requires a complex lifting and lowering device for holding, raising and lowering the metal rod in order to constantly adjust the position of the rod within the induction coil.
  • the intended process should also be capable of providing high-performance silicon processing products that are used in demanding applications and are characterized, for example, by high thermal conductivity.
  • the object underlying the invention is achieved by the first aspect of the invention, directed to a process for the continuous preparation of silicon melt with immediate subsequent further processing, comprising the following steps in the given order:
  • step (D) directly feeding the silicon melt obtained after step (C) via a melting vessel outlet located at a bottom of the melting vessel to a molten silicon processing unit to further process the molten silicon.
  • Directly in the sense of the invention means that the silicon melt obtained in step (C) is fed directly to the processing unit, without, for example, being fed into a The silicon slurry is then transferred to an intermediate container.
  • the feed can be effected, for example, contactlessly through a free outlet or via lines made of a suitable material. Suitable materials that are resistant to the silicon melt are known to those skilled in the art.
  • liquid silicon can be continuously provided for downstream processes, such as granulation or atomization (so-called atomization).
  • atomization granulation or atomization
  • the continuous process also increases throughput, as downstream processes such as granulation or atomization can also be operated continuously. Since neither warm-up nor cooling times are required, the costs for the particulate end product are lower.
  • the process according to the invention also offers the advantage that the silicon can be processed and purified simultaneously in a single process step by removing the impurities in the starting material by separating any slag that may be formed and which comprises the impurities.
  • the melting vessel preferably has a top and bottom side, the spacing of which defines a melting vessel height, wherein the top side preferably has an opening through which the solid silicon supplied in step (C) is supplied.
  • a silicon melt is formed with a slag floating thereon, which in particular comprises impurities of the silicon used.
  • the continuous melting process according to the invention enables the simultaneous purification of the starting material without complex, additional process steps.
  • the slag which particularly comprises impurities from the silicon used, floats on the surface of the melt and is thereby separated from the purified silicon flowing out at the bottom. This is a significant advantage of the process. A complex separation of the impurities by decanting or reactive gas atmosphere, as often used in the field, is not required.
  • the suitable tempering device is, for example, an induction heater.
  • the process temperature is at least 10 °C, preferably at least 20 °C, particularly preferably at least 30 °C higher than the melting temperature of the solid silicon used.
  • the method is designed to readjust the process temperature, which is set in step (B), during step (C). This is This is particularly necessary when the temperature of the mixture of silicon melt and solid silicon fed into the melting vessel falls below the desired process temperature.
  • Step (C) preferably starts as soon as a large portion of the initial silicon has melted, for example, as soon as at least 50 wt.% of the initial silicon is in molten form.
  • step (C) can be carried out continuously or in portions, preferably continuously. Particularly preferably, the addition of solid silicon in step (C) is arranged such that as much solid silicon is added as molten silicon leaves the melting vessel via the melting vessel outlet.
  • the feeding in step (C) can be carried out by means of a suitable device, for example by gravimetric dosing with a rotary valve, directly onto the melt or below the level into the melt.
  • the initial silicon and/or the solid silicon supplied in step (C) is preferably metallurgical silicon.
  • the initial silicon and/or the solid silicon added in step (C) has an average grain size in the range 0.5 mm to 20 cm, preferably 1 mm to 20 mm.
  • the initial silicon and/or the solid silicon added in step (C) is, for example, commercially available as pre-crushed material or via a grinding process with protective screening with a suitable sieve mesh size, for example, not more than 2 cm.
  • the grain size according to the invention leads to particular advantages in process control: Silicon particles with a small grain size float on the silicon melt and do not melt quickly enough. Silicon particles with a larger grain size than that according to the invention also do not melt quickly enough. Only the particles with the grain size according to the invention exhibit a melting profile suitable for the process according to the invention.
  • the solid silicon added in step (C) has a grain size of less than 10 wt.% with ⁇ 150 pm, preferably less than 5 wt.% with ⁇ 100 pm, more preferably less than 3 wt.% with ⁇ 80 pm, determined by sieve analysis according to DIN 66165.
  • Maintaining the low levels of microparticles contributes particularly to occupational safety. If the particle size distribution according to the invention is maintained, no complex dust protection measures, such as dust extraction devices on the melting vessel, are necessary.
  • step (C) is in particular added in such a way that it has direct contact with the molten silicon in the melting vessel.
  • the purity of the initial silicon and/or the solid silicon supplied in step (C) is > 96%, preferably > 98%, more preferably > 99% purity.
  • a preferred method is configured so that the filling level of the melt within the melting vessel is sufficiently high to avoid clogging of the outlet and/or discharge of the slag, in particular at least 10 cm high.
  • a preferred method is configured such that the fill level of the melt within the melting vessel is at least 10% of the height of the melting vessel, particularly preferably 20-80%, in particular 30-70%.
  • Maintaining the melt level within the melting vessel at the heights according to the invention is particularly advantageous because this prevents undesired clogging of the outlet with slag and/or discharge of the slag either via the melting vessel outlet (if the melt level is too low) or the top of the melting vessel (if the melt level is exceeded according to the invention). Furthermore, it can be prevented that the melting vessel outlet becomes clogged by silicon that has not yet melted if the melting vessel is too low.
  • the slag possibly formed in step (C) can be collected on the surface of the melt and/or separated from the surface in portions or continuously, for example by decanting into a slag collecting container.
  • the separation of the slag floating on the surface of the melt is designed in such a way that the filling level of the melt is increased, for example by adding solid silicon, until the filling level reaches the top of the melting vessel.
  • the top of the melting vessel is open. designed so that the slag, possibly together with a small portion of the melt, overflows and is thus removed from the melting vessel.
  • the overflowing slag can then be collected, for example, in an overflow channel surrounding the melting vessel and located near the top of the melting vessel.
  • a preferred embodiment of the process is carried out at a melting rate of at least 45 kg of silicon per hour, preferably 60 kg of silicon per hour, particularly preferably 75 kg per hour.
  • the processing unit can be selected from an atomization unit, a casting unit, a stirring unit, a granulation unit or a purification unit, in particular an atomization unit.
  • the molten silicon is poured from the melting vessel outlet directly into a mold for shaping, in which the silicon solidifies.
  • the molten silicon is poured from the melting vessel outlet directly into a stirring vessel, in which the silicon melt is then added, for example, to a metal melt in the stirring vessel to form an alloy.
  • the molten silicon is transferred from the melting vessel outlet directly into a quenching vessel filled with water, where the molten silicon solidifies in the water in the form of granules.
  • the molten silicon is fed, for example, to the Czochralski process, in which in which high-purity single crystals are obtained from the silicon melt with the help of a silicon crystallization nucleus.
  • the immediately subsequent further processing of the silicon melt represents a production of silicon particles.
  • the processing unit then particularly preferably represents an atomization unit for molten silicon and the method is configured such that the molten silicon is atomized in the form of a spray jet immediately after melting and solidifies to form silicon particles, preferably predominantly round, spattered and/or nodular silicon particles with irregular surface morphology.
  • the molten silicon is fed directly to the atomization unit, i.e. the melt is fed directly to the atomization unit without being transferred to an intermediate container.
  • the atomization in step (D) can be carried out, for example, together with an inert gas as atomization gas selected from nitrogen and argon, in particular nitrogen.
  • the atomization unit preferably comprises at least one atomization unit.
  • Gas atomization techniques are widely used industrially for atomizing metal melts.
  • a wide variety of nozzle designs are used, all of which have in common that a pressurized atomization gas escapes from one or more gas nozzles and approaches a melt, thereby atomizing it.
  • the atomization unit can therefore be a closed coupled unit or a Laval nozzle, in particular a Laval nozzle.
  • the silicon melt emerging from the melting vessel via the melting vessel outlet is immediately exposed to the atomizing gas, which is released from a plurality of gas nozzles arranged near the melting vessel outlet, in order to achieve shearing of the melt and thus atomization.
  • the melt flows through the nozzle, surrounded by a coaxial flow of atomizing gas in the same direction.
  • the melt is subjected to shear stress and expands, thus achieving atomization.
  • Laval nozzles for atomizing a metal melt are well known in the field and are described, for example, in US6481638B1.
  • the atomization is carried out at a throughput rate of at least 45 kg per hour, preferably 60 kg per hour, particularly preferably 75 kg per hour.
  • the sputtering in step (D) is preferably arranged so that the molten silicon solidifies substantially completely before it hits a housing part of the sputtering unit.
  • the spray jet from the expansion nozzle which contains the solidifying predominantly round, spattered and/or nodular silicon particles, is preferably maintained continuously for at least 60 minutes, more preferably for at least 90 minutes, particularly preferably for more than 120 minutes.
  • Predominantly round, spiky and/or nodular silicon particles with particularly advantageous properties, which arise from a special surface morphology of the particles, are obtainable in particular via the process according to the invention for the continuous preparation of silicon melt with immediately subsequent further processing in the form of atomization.
  • the object of the invention is also achieved by a further aspect of the present invention, directed to silicon particles having a predominantly round, spiky and/or nodular particle shape with an average particle size d50 in the range from 20 to 200 pm, in particular 30 to 150 pm, wherein the particles have an irregular surface morphology which is characterized by a raspberry-shaped surface structure.
  • the d50 value can be determined using methods known to those skilled in the art, e.g., laser diffraction.
  • laser granulometry the particles are dispersed in a liquid or gaseous medium.
  • the particle size distribution is then determined based on the diffraction of a laser beam directed onto the sample medium.
  • the d50 value means that 50% of the particles are smaller than the specified value.
  • the silicon particles produced by the melting and atomization process preferred according to the invention having a predominantly round, spiky and/or nodular particle shape, thus have a raspberry-shaped surface structure.
  • the silicon particles are composed of predominantly round, spiky and/or nodular primary particles, preferably nodular or predominantly round primary particles, particularly preferably predominantly round Primary particles on which a large number of secondary particles are located.
  • the average diameter of the primary particles is greater than the average diameter of the secondary particles, the average diameter of the primary particles preferably being at least 2 times larger, more preferably at least 3 times larger, than the average diameter of the secondary particles.
  • These secondary particles can also be spherical or protrude from the surface of the primary particle in the form of prisms, prism-like structures or cones.
  • the surface of the primary particles is covered with secondary particles, preferably at least 10%, particularly preferably at least 20%, as can be confirmed, for example, by scanning electron micrographs.
  • the secondary particles are firmly fused to the primary particles and are partially immersed in the secondary particles, preferably on average to at least 10% of the diameter thereof, as can be seen, for example, in electron micrographs. This distinguishes the silicon particles with a raspberry-shaped surface preferred according to the invention from agglomerates of primary particles and secondary particles, in which the secondary particles adhere to the surface of the primary particles only through physical interactions and can therefore be easily detached from them.
  • the spattered primary particles are preferably composed of agglomerates of ellipsoidal and/or spherical individual particles.
  • Nodular is also a term known in the field of particle technology and means, for example, that the primary particles are made up of nodular agglomerates of irregularly arranged individual particles.
  • the silicon particles produced by the preferred process according to the invention exhibit the advantageous properties according to the invention, in particular a comparatively high thermal conductivity.
  • the high thermal conductivity of the particles according to the invention is particularly useful, for example, in the production of thermally conductive plastics in which the particles according to the invention are embedded in a plastic matrix, for example a silicone matrix.
  • Figure 3A shows a cross-section of the interface between a particle according to the invention with irregular surface morphology (bottom) and the plastic matrix (top).
  • Figure 3B shows that the heat transfer from the particle into the plastic surprisingly occurs via the secondary particles (i.e., the raspberry-shaped surface structure) into the plastic matrix.
  • the particles according to the invention are thus surprisingly characterized by excellent
  • the particles according to the invention are particularly suitable as thermally conductive fillers for various matrices, such as plastics.
  • the Si particles used as fillers in the prior art are mostly obtained by grinding processes and are prism-shaped (see Figure 4) and have an angular surface.
  • the irregular surface morphology of the particles significantly improves the thermal conductivity properties.
  • the particles according to the invention preferably have an aspect ratio b/1 of at least 0.6, preferably at least 0.7.
  • the aspect ratio is used as a key figure to describe the particle shape.
  • the aspect ratio is often described by the ratio of length to width (1/b). This results in values greater than or equal to 1.
  • the aspect ratio is calculated from the inverse ratio of width to length (b/1). This results in Values of less than or equal to 1 result. Both parameters can be converted into one another by taking the inverse.
  • the aspect ratio is defined as the ratio of the width to the length (b/1) of the particle.
  • the particles according to the invention have a sphericity index SPHT of at least 0.68, preferably at least 0.74.
  • the sphericity SPHT is calculated from the projection area A of the measured particle in relation to the area of a circle with the same circumference P of the projected particle according to the following formula (more detailed information can be found, for example, in "Operating Instructions / Manual Particle Size analysis System CAMSIZER®", Retsch Technology GmbH, 42781 Haan; Doc. No. CAMSIZER V0115):
  • the characteristic value SPHT corresponds to the square of the circularity C according to ISO 9276-6.
  • the particles according to the invention preferably have a particle size distribution with a distribution width SPAN ((dgo-dio) /dso) of at least 0.4, preferably at least 0.6, particularly preferably at least 0.8.
  • SPAN distribution width
  • the SPAN is between 0.6 and 3.0, in particular between 0.8 and 2.5.
  • the width of the particle size distribution weighted by the mean particle size dso is used, the dimensionless distribution width SPAN (span), which is defined as:
  • all parameters describing particle size refer to a volume-related distribution.
  • parameters describing particle size can be determined, for example, using dynamic image analysis according to ISO 13322-2 and ISO 9276-6, for example, using a Camsizer X2 from Retsch Technology.
  • the particles according to the invention preferably contain at most 1.5 wt.% silicon particles smaller than 2 ⁇ m, preferably at most 1 wt.%, particularly preferably at most 0.5 wt.%, in each case based on the total amount of silicon particles.
  • Particularly preferred silicon particles are essentially free of particle fractions smaller than 2 ⁇ m. Essentially free of means that the presence of such particles is tolerated to the extent of a "contamination" of the particles according to the invention and does not interfere with their inventive effect.
  • the silicon particles according to the invention preferably contain less than 15% by weight, more preferably less than 10% by weight, particularly preferably less than 5% by weight of a particle fraction having a diameter of less than or equal to 10 pm, in each case based on the total amount of silicon particles.
  • the silicon particles according to the invention preferably contain less than 20% by weight, more preferably less than 15% by weight, particularly preferably less than 10% by weight of a particle fraction having a diameter of less than or equal to 20 pm, in each case based on the total amount of silicon particles.
  • Silicon particles with an average particle size of over 200 pm are not suitable for many applications of thermally conductive plastic compositions, since such large-grained silicon particles often do not fit into the fine gaps that have to be filled, for example, with gap filler.
  • a further aspect of the present invention relates to the use of the predominantly round, spiky and/or nodular silicon particles with raspberry-shaped surface morphology according to the invention as a thermally conductive filler.
  • Predominantly round, spiky, and/or nodular silicon particles with a raspberry-shaped surface morphology possess significant application potential, particularly as thermally conductive fillers for gap fillers or potting compounds in the field of e-mobility.
  • Such silicon particles offer significantly higher thermal conductivity while simultaneously reducing sealing and manufacturing costs compared to conventional state-of-the-art thermally conductive fillers.
  • Figures 1A and B show electron micrographs of the predominantly round particles with a raspberry-shaped surface structure.
  • Figures 2A and B show electron micrographs of the nodular particles with raspberry-shaped surface structure.
  • Figures 3A and B show heat transfer profiles of a silicon particle according to the invention in a plastic matrix.
  • Figure 4 shows silicon particles obtainable by a conventional milling process.
  • the present invention also relates to the following embodiments described via items 1-28:
  • step (D) directly feeding the silicon melt obtained after step (C) via a melting vessel outlet located at a bottom of the melting vessel to a molten silicon processing unit to further process the molten silicon.
  • the melting vessel has a top and a bottom, the spacing of which defines a melting vessel height, wherein the top preferably has an opening through which the solid silicon supplied in step (C) is supplied.
  • step (B) and step (C) forms a silicon melt with a slag floating thereon.
  • the suitable tempering device is an induction heater.
  • process temperature is at least 10 °C, preferably at least 20 °C, particularly preferably at least 30 °C higher than the melting temperature of the initial silicon or the solid silicon used.
  • step (C) starts as soon as a large part of the initial silicon has melted, preferably at least 50 wt.% of the initial silicon is in molten form.
  • step (C) takes place continuously or in portions, preferably continuously.
  • step (C) is carried out by means of a suitable device, for example by gravimetric dosing with a rotary valve, directly onto the melt or below the level in the melt.
  • step (C) is metallurgical silicon.
  • step (C) has an average grain size in the range 0.5 mm to 20 cm, preferably 1 mm to 20 mm.
  • the solid silicon added in step (C) has a grain size of less than 10 wt.% with ⁇ 150 gm, preferably less than 5 wt.% with ⁇ 100 gm, more preferably less than 3 wt.% with ⁇ 80 gm, determined by sieve analysis according to DIN 66165.
  • step (C) is supplied in such a way that it has direct contact with the molten silicon in the melting vessel.
  • step (C) The process according to any one of the preceding points, wherein the purity of the initial silicon and/or the solid silicon fed in step (C) is > 96%, preferably > 98%, more preferably > 99% purity.
  • Method according to one of the preceding points which is configured such that the filling level of the melt within the melting vessel is sufficiently high to avoid clogging of the outlet and/or discharge of the slag, in particular is at least 10 cm high.
  • step (C) A process according to any one of the preceding points, wherein the slag possibly formed in step (C) is collected on the surface of the melt and/or is separated from the surface in portions or continuously, for example by decanting into a slag collecting container. 17. A process according to any one of the preceding points, which is carried out at a melting rate of at least 45 kg of silicon per hour, preferably 60 kg of silicon per hour, particularly preferably 75 kg per hour.
  • processing unit is selected from an atomization unit, a casting unit, a stirring unit, a granulation unit or a purification unit.
  • processing unit is an atomization unit for molten silicon and the method is configured such that the molten silicon is atomized in the form of a spray jet immediately after melting and solidifies to form silicon particles, preferably predominantly round, spattered and/or nodular silicon particles with irregular surface morphology.
  • step (D) is carried out together with an inert gas as atomization gas selected from nitrogen and argon, in particular nitrogen.
  • the atomization unit comprises at least one atomization unit, for example selected from a closed-coupled unit and a Laval nozzle, in particular a Laval nozzle.
  • Silicon particles according to item 25 which are composed of predominantly round, spiky and/or nodular primary particles, preferably nodular or predominantly round primary particles, particularly preferably predominantly round primary particles, on which a plurality of secondary particles is located, wherein the primary particles are larger than the secondary particles and wherein the secondary particles are spherical or protrude from the surface of the primary particle in the form of prisms, prism-like structures or cones.
  • 5% of the surface of the primary particles with secondary particles are covered, preferably at least 10%, particularly preferably at least 20%.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un procédé de fourniture continue d'une masse fondue de silicium et de traitement supplémentaire de la masse fondue de silicium immédiatement après, comprenant les étapes consistant à (A) fournir du silicium solide dans un récipient de fusion, (B) réguler la température du récipient de fusion, de manière à ainsi former une masse fondue de silicium, (C) fournir du silicium solide, le silicium solide fourni étant fondu, et (D) fournir immédiatement la masse fondue de silicium obtenue à une unité de traitement de silicium fondu. L'invention concerne en outre des produits de traitement du silicium et leur utilisation.
PCT/EP2023/074591 2023-09-07 2023-09-07 Fusion continue de silicium pour procédés en aval Pending WO2025051364A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2023/074591 WO2025051364A1 (fr) 2023-09-07 2023-09-07 Fusion continue de silicium pour procédés en aval

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2023/074591 WO2025051364A1 (fr) 2023-09-07 2023-09-07 Fusion continue de silicium pour procédés en aval

Publications (1)

Publication Number Publication Date
WO2025051364A1 true WO2025051364A1 (fr) 2025-03-13

Family

ID=88188730

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/074591 Pending WO2025051364A1 (fr) 2023-09-07 2023-09-07 Fusion continue de silicium pour procédés en aval

Country Status (1)

Country Link
WO (1) WO2025051364A1 (fr)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3311343A1 (de) 1983-03-29 1984-10-04 Bayer Ag, 5090 Leverkusen Metallpulver und verfahren zu dessen herstellung
DE3533964C1 (de) 1985-09-24 1987-01-15 Alfred Prof Dipl-Ing Dr-I Walz Verfahren und Vorrichtung zum Herstellen von Feinstpulver in Kugelform
DE3737130A1 (de) 1987-11-02 1989-05-11 Alfred Prof Dipl Ing Dr I Walz Verfahren und vorrichtung zum herstellen von feinstpulver
EP0372918B1 (fr) 1988-12-08 1993-03-17 Elkem A/S Poudre de silicium et procédé de sa préparation
US6481638B1 (en) 1997-12-17 2002-11-19 Gunther Schulz Method and device for producing fine powder by atomizing molten material with gases
DE10340606B4 (de) 2003-08-29 2005-10-06 Gerking, Lüder, Dr.-Ing. Vorrichtung zum Verdüsen eines Schmelzestrahls und Verfahren zum Verdüsen von hochschmelzenden Metallen und Keramikschmelzen
WO2012074934A1 (fr) * 2010-11-30 2012-06-07 Rec Silicon Inc. Système et procédé de fusion et de moulage par de coulée d'une charge d'alimentation
EP2698454A1 (fr) * 2012-07-30 2014-02-19 SolarWorld Industries America, Inc. Appareil de fusion
EP3083107B1 (fr) 2013-12-20 2019-12-04 NANOVAL GmbH & Co. KG Dispositif et procédé de fusion en zone flottante d'un matériau et d'atomisation du matériau fondu pour fabriquer de la poudre
EP3841225A1 (fr) 2018-08-23 2021-06-30 Beemetal Corp. Systèmes et procédés de production continue de poudres métalliques atomisées par gaz
WO2022161787A1 (fr) * 2021-01-29 2022-08-04 Wacker Chemie Ag Pâtes thermoconductrices contenant du silicium

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3311343A1 (de) 1983-03-29 1984-10-04 Bayer Ag, 5090 Leverkusen Metallpulver und verfahren zu dessen herstellung
DE3533964C1 (de) 1985-09-24 1987-01-15 Alfred Prof Dipl-Ing Dr-I Walz Verfahren und Vorrichtung zum Herstellen von Feinstpulver in Kugelform
DE3737130A1 (de) 1987-11-02 1989-05-11 Alfred Prof Dipl Ing Dr I Walz Verfahren und vorrichtung zum herstellen von feinstpulver
EP0372918B1 (fr) 1988-12-08 1993-03-17 Elkem A/S Poudre de silicium et procédé de sa préparation
US6481638B1 (en) 1997-12-17 2002-11-19 Gunther Schulz Method and device for producing fine powder by atomizing molten material with gases
EP1042093B1 (fr) 1997-12-17 2006-03-08 NANOVAL Gesellschaft für Pulver- und Fasertechnik mbH & Co. KG Procede et dispositif pour produire des poudres fines par atomisation de matieres fondues avec des gaz
DE10340606B4 (de) 2003-08-29 2005-10-06 Gerking, Lüder, Dr.-Ing. Vorrichtung zum Verdüsen eines Schmelzestrahls und Verfahren zum Verdüsen von hochschmelzenden Metallen und Keramikschmelzen
WO2012074934A1 (fr) * 2010-11-30 2012-06-07 Rec Silicon Inc. Système et procédé de fusion et de moulage par de coulée d'une charge d'alimentation
EP2698454A1 (fr) * 2012-07-30 2014-02-19 SolarWorld Industries America, Inc. Appareil de fusion
EP3083107B1 (fr) 2013-12-20 2019-12-04 NANOVAL GmbH & Co. KG Dispositif et procédé de fusion en zone flottante d'un matériau et d'atomisation du matériau fondu pour fabriquer de la poudre
EP3841225A1 (fr) 2018-08-23 2021-06-30 Beemetal Corp. Systèmes et procédés de production continue de poudres métalliques atomisées par gaz
WO2022161787A1 (fr) * 2021-01-29 2022-08-04 Wacker Chemie Ag Pâtes thermoconductrices contenant du silicium

Similar Documents

Publication Publication Date Title
DE68917132T2 (de) Verfahren und vorrichtung zum zerstäuben einer metallschmelze.
DE60124246T2 (de) Polykristallines silicium und verfahren zur herstellung desselben
DE69532617T2 (de) Target für die Kathodenzerstäubung mit ultrafeinen orienterten Körnern
DE602004010459T2 (de) Verfahren zur Herstellung von mit Nanopartikeln verstärkten Materialien sowie hergestellte Formkörper
DE3505660A1 (de) Vorrichtung und verfahren zum zerstaeuben instabiler schmelzstroeme
DE3505659A1 (de) Schmelz-zerstaeubung mit reduzierter gasstroemung sowie vorrichtung zum zerstaeuben
EP3725439B1 (fr) Fabrication d'une poudre métallique d'un alliage d'aluminium destinée à l'utilisation en tant que matière dans la fabrication additive
DE1521124C2 (de) Verfahren zur Herstellung eines über wiegend aus Molybdän bestehenden, zur Sprüh beschichtung geeigneten Metallpulvers
DE112007000673T5 (de) Magnesiumlegierung mit hoher Festigkeit und hoher Zähigkeit und Verfahren zu deren Herstellung
DE102019130108B4 (de) Verfahren zur Herstellung eines Aluminiumgussteils und hierdurch hergestelltes Aluminiumgussteil
DE68914875T2 (de) Verfahren und Apparat zur Herstellung von Spänen aus magnetisch ausgerichtetem RE-Fe-B-Typ-Material.
EP2421997B1 (fr) Production de particules métalliques arrondies
EP0440275A1 (fr) Procédé pour la production des alliages monotectiques
DE10205897A1 (de) Verfahren zur Herstellung von partikelförmigem Material
DE3505662A1 (de) Verfahren zum herstellen feinen pulvers aus geschmolzenem metall sowie vorrichtung zum zerstaeuben
DE2043275A1 (de) Verfahren und Vorrichtung zum Her stellen hochgradig reiner Metallpulver
WO1995005490A1 (fr) Agent de traitement d'un materiau en fusion, sa production et son utilisation
EP2689873B1 (fr) Procédé de fabrication d'une poudre d'un alliage métallique
DE3505661C2 (fr)
WO2025051364A1 (fr) Fusion continue de silicium pour procédés en aval
EP1268874A1 (fr) Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production
EP0007536A1 (fr) Procédé et dispositif pour la granulation d'un metal fondu en vue de la production de poudre
DE19800433C2 (de) Stranggießverfahren zum Vergießen einer Aluminium-Gleitlagerlegierung
DE69328374T2 (de) Pulvermischung zum spritzgiessen von metall
DE2519568C3 (de) Verfahren und Vorrichtung zur Herstellung von Schleifmitteln

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23776266

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)