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EP1268874A1 - Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production - Google Patents

Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production

Info

Publication number
EP1268874A1
EP1268874A1 EP01929445A EP01929445A EP1268874A1 EP 1268874 A1 EP1268874 A1 EP 1268874A1 EP 01929445 A EP01929445 A EP 01929445A EP 01929445 A EP01929445 A EP 01929445A EP 1268874 A1 EP1268874 A1 EP 1268874A1
Authority
EP
European Patent Office
Prior art keywords
sputtering target
particles
melt
granules
target according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01929445A
Other languages
German (de)
English (en)
Inventor
Martin Schlott
Josef Heindel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unaxis Materials AG
Original Assignee
Unaxis Materials AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Materials AG filed Critical Unaxis Materials AG
Publication of EP1268874A1 publication Critical patent/EP1268874A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the primary structure being able to have grain sizes or sizes of individually separated phases, which are preferably at least 70%, in particular 80% ⁇ 30 ⁇ m.
  • the size especially in the case of precipitations, can also be less than 10 ⁇ m.
  • the oxygen content of the alloys can typically be in the range from 200 to 300 ppm, with an increase in the oxygen content only resulting, for example, to 600 ppm even after subsequent pulverization using the primary structure. In any case, the oxygen content can be kept well below 1000 ppm.
  • Figure 1 shows several granules, with 1 being a granulate, which here is approximately in the form of a round structure and has several cracks. During further processing, these granules can shatter into particles.
  • the granulate itself or the particles have a fine structure as shown in Figure 2 as the primary structure, whereby Figure 2 clearly shows the coarse structure of the particles and the fine structure within these particles.
  • Figure 2 clearly shows the somewhat broader boundary lines between three to four larger particles, which in turn are structured much more finely in the context of a primary structure.
  • a scale of 50 ⁇ m is given in the drawing figure. It can be clearly seen that the primary structure has a structuring which has significantly smaller area sizes within the fine structure.
  • Figure 1 shows a granulate of Ge Sb 2 Te 5 alloy poured into water at a magnification of 50: 1 and Figure 2 particles of an AglnSbTe alloy at a magnification of 200: 1.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

L'invention concerne une cible de pulvérisation cathodique à base d'un métal ou d'un alliage métallique, présentant de préférence une température de fusion inférieure à 750 °C. L'invention concerne en outre un procédé permettant de produire une cible de pulvérisation cathodique à base d'un métal ou d'un alliage métallique, présentant de préférence une température de fusion inférieure à 750 °C.
EP01929445A 2000-04-07 2001-03-23 Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production Withdrawn EP1268874A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10017414 2000-04-07
DE10017414A DE10017414A1 (de) 2000-04-07 2000-04-07 Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung
PCT/EP2001/003310 WO2001077403A1 (fr) 2000-04-07 2001-03-23 Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production

Publications (1)

Publication Number Publication Date
EP1268874A1 true EP1268874A1 (fr) 2003-01-02

Family

ID=7637982

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01929445A Withdrawn EP1268874A1 (fr) 2000-04-07 2001-03-23 Cible de pulverisation cathodique a base d'un metal ou d'un alliage metallique, et son procede de production

Country Status (5)

Country Link
US (1) US20030168333A1 (fr)
EP (1) EP1268874A1 (fr)
JP (1) JP2003530485A (fr)
DE (1) DE10017414A1 (fr)
WO (1) WO2001077403A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10159398A1 (de) 2001-12-04 2003-06-12 Giesecke & Devrient Gmbh Speichern von und Zugreifen auf Daten in einem Mobilgerät und einem Benutzermodul
DE102004055228B4 (de) * 2004-11-17 2010-09-30 Daimler Ag Thermisch gespritzte Lagerschalen für Pleuel
CN101103134B (zh) * 2005-01-18 2010-07-07 日矿金属株式会社 烧结用Sb-Te系合金粉末及其制造方法和烧结该粉末得到的烧结体溅射靶
JP4061557B2 (ja) * 2005-07-11 2008-03-19 三菱マテリアル株式会社 相変化膜形成用スパッタリングターゲットおよびその製造方法。
DE102005050424B4 (de) * 2005-10-19 2009-10-22 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen Legierungen
JP2009197310A (ja) * 2008-02-25 2009-09-03 Kobe Steel Ltd スパッタリングターゲット
EP2626443A1 (fr) * 2010-10-08 2013-08-14 Kabushiki Kaisha Kobe Seiko Sho Cible de pulvérisation en alliage à base d'al et son procédé de production
US10889887B2 (en) * 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791955A (en) * 1972-12-11 1974-02-12 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
JPS63188920A (ja) * 1987-02-02 1988-08-04 Nkk Corp 強磁性体スパツタリングタ−ゲツトの製造方法
JP2909108B2 (ja) * 1989-10-24 1999-06-23 日立金属株式会社 ターゲット部材およびその製造方法
US5534712A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
DE4410114A1 (de) * 1993-12-20 1995-06-22 Leybold Materials Gmbh Target für Magnetron-Kathodenzerstäubungsanlage aus einer Kobalt-Basislegierung
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5736657A (en) * 1995-03-31 1998-04-07 Ricoh Company, Ltd. Sputtering target
US6033620A (en) * 1995-04-18 2000-03-07 Tosoh Corporation Process of preparing high-density sintered ITO compact and sputtering target
DE19715806A1 (de) * 1997-04-16 1998-10-22 Leybold Materials Gmbh Verfahren zur Herstellung eines Sputtertargets auf der Basis von Zinksulfid sowie das Sputtertarget selbst
DE19735734B4 (de) * 1997-08-18 2008-01-03 W.C. Heraeus Gmbh Pulvermetallurgisches Sputtertarget auf der Basis von Wismut und Verfahren zu seiner Herstellung
JPH11293454A (ja) * 1998-04-14 1999-10-26 Hitachi Metals Ltd Ａｌ系スパッタリング用ターゲット材及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0177403A1 *

Also Published As

Publication number Publication date
US20030168333A1 (en) 2003-09-11
DE10017414A1 (de) 2001-10-11
WO2001077403A1 (fr) 2001-10-18
JP2003530485A (ja) 2003-10-14

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