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WO2024185804A1 - Élément de cellule solaire, module de cellule solaire et procédé de production d'un élément de cellule solaire - Google Patents

Élément de cellule solaire, module de cellule solaire et procédé de production d'un élément de cellule solaire Download PDF

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Publication number
WO2024185804A1
WO2024185804A1 PCT/JP2024/008486 JP2024008486W WO2024185804A1 WO 2024185804 A1 WO2024185804 A1 WO 2024185804A1 JP 2024008486 W JP2024008486 W JP 2024008486W WO 2024185804 A1 WO2024185804 A1 WO 2024185804A1
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Prior art keywords
surface side
receiving surface
curvature
substrate
solar cell
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Japanese (ja)
Inventor
唯人 牧
訓太 吉河
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Kaneka Corp
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Kaneka Corp
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Priority to CN202480013580.XA priority Critical patent/CN120731677A/zh
Priority to JP2025505636A priority patent/JPWO2024185804A1/ja
Publication of WO2024185804A1 publication Critical patent/WO2024185804A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures

Definitions

  • the present invention relates to solar cells, solar cell modules, and methods for manufacturing solar cells.
  • Double-sided electrode type solar cells in which electrodes are formed on both the light-receiving surface and the back surface
  • back-surface electrode type also called back-contact type or back-surface junction type; hereafter referred to as back-contact type
  • solar cells in which electrodes are formed only on the back surface.
  • double-sided electrode type solar cells electrodes are formed on the light-receiving surface, so the metallic luster of this electrode is noticeable.
  • back-contact type solar cells no electrodes are formed on the light-receiving surface, so the light-receiving surface is uniformly black, making it highly aesthetically pleasing.
  • Patent Document 1 discloses a back-contact type solar cell.
  • a back-contact type solar cell comprises a crystalline silicon substrate, a first conductive type semiconductor layer and a first electrode layer formed in sequence on a portion of the back surface of the substrate, and a second conductive type semiconductor layer and a second electrode layer formed in sequence on another portion of the back surface of the substrate.
  • This solar cell also comprises an optical adjustment layer (anti-reflection layer) formed in sequence on the light-receiving surface side of the substrate.
  • a pyramidal, fine uneven structure known as a texture structure is formed on the light-receiving surface of a crystalline silicon substrate. This reduces the reflection of incident light on the light-receiving surface and improves the light trapping effect in the substrate.
  • a textured structure can also be formed on the back side of a crystalline silicon substrate. This increases the efficiency of collecting light that passes through the substrate without being absorbed.
  • an uneven structure is formed on the light-receiving surface and back surface of a crystalline silicon substrate, an uneven structure is also formed on the side surface of the crystalline silicon substrate.
  • the present invention aims to provide a solar cell, a solar cell module, and a method for manufacturing a solar cell that reduces color unevenness on the individual light receiving surfaces when modularized.
  • the present invention also aims to provide a solar cell and a method for manufacturing a solar cell that reduces chipping.
  • each solar cell in which multiple solar cells are arranged in a two-dimensional shape, by highlighting the peripheral edge of the light-receiving surface of each solar cell, each solar cell can be viewed three-dimensionally, and this visibility effect makes the color distribution of the light-receiving surface of the multiple solar cells less noticeable.
  • the solar cell according to the present invention is a back-contact type solar cell including a crystalline silicon substrate having an uneven structure on the light-receiving surface side, an optical adjustment layer formed on the light-receiving surface side of the substrate, a first conductive type semiconductor layer formed on a part of the back surface side of the substrate opposite the light-receiving surface side, a second conductive type semiconductor layer formed on another part of the back surface side of the substrate, a first electrode layer formed on the first conductive type semiconductor layer, and a second electrode layer formed on the second conductive type semiconductor layer, wherein the radius of curvature of the top portion of at least a part of the uneven structure of the peripheral portion of the light-receiving surface side of the substrate is larger than the radius of curvature of the top portion of the uneven structure of the central portion of the light-receiving surface side, the uneven structure of the substrate is reflected in the light-receiving surface of the solar cell, and the radius of curvature of the top portion of at least a part of
  • the solar cell module according to the present invention has the above-mentioned solar cells arranged in a two-dimensional manner.
  • the solar cell manufacturing method according to the present invention is the solar cell manufacturing method described above, in which, in the step of forming an uneven structure on the light-receiving surface side of the crystalline silicon substrate, the flow rate of the etching solution in at least a portion of the periphery of the light-receiving surface side is controlled to be faster than the flow rate of the etching solution in the center of the light-receiving surface side.
  • chipping at the edge of the crystalline silicon substrate can be reduced by controlling the radius of curvature of the edge (periphery of the light-receiving surface, periphery of the back surface, and edge face), particularly the top portion of the uneven structure on the side surface (edge face), so that it is larger.
  • the solar cell according to the present invention is a solar cell comprising a crystalline silicon substrate having an uneven structure on the light-receiving surface side, back surface side and side surface, a first conductive type semiconductor layer formed on the light-receiving surface side or back surface side of the substrate, a second conductive type semiconductor layer formed on the light-receiving surface side or back surface side of the substrate, a first electrode layer formed on the first conductive type semiconductor layer, and a second electrode layer formed on the second conductive type semiconductor layer, wherein the radius of curvature of the top portion of the uneven structure on the side surface of the substrate is greater than the radius of curvature of the top portion of the uneven structure in the center of the light-receiving surface side and the radius of curvature of the top portion of the uneven structure in the center of the back surface side.
  • the solar cell manufacturing method according to the present invention is the solar cell manufacturing method described above, in which, in the process of forming an uneven structure on the light-receiving surface side, back surface side, and side surface side of the crystalline silicon substrate, the flow rate of the etching solution on at least a portion of the periphery of the light-receiving surface side and on the side surface is controlled to be faster than the flow rate of the etching solution in the center of the light-receiving surface side, and the flow rate of the etching solution on at least a portion of the periphery of the back surface side and on the side surface is controlled to be faster than the flow rate of the etching solution in the center of the back surface side.
  • the present invention it is possible to reduce color unevenness on the light receiving surface of each solar cell in a modularized system. In addition, according to the present invention, it is possible to reduce chipping in solar cells.
  • FIG. 1 is a diagram showing a solar cell module according to a first embodiment as viewed from the light receiving surface side.
  • 1 is a diagram showing a solar cell according to a first embodiment as viewed from the light-receiving surface side.
  • 1 is a diagram showing a solar cell according to a first embodiment as viewed from the back surface side.
  • 4 is a cross-sectional view taken along line IV-IV of the solar cell shown in FIG. 3.
  • 3 is a cross-sectional view showing an uneven structure in the center of the light-receiving surface side of the substrate shown in FIG. 2.
  • 3 is a cross-sectional view showing an uneven structure of a peripheral portion on a light-receiving surface side of the substrate shown in FIG. 2.
  • FIG. 4 is a cross-sectional view showing an uneven structure in the center of the rear surface side of the substrate shown in FIG. 3.
  • 4 is a cross-sectional view showing an uneven structure of the peripheral portion on the back surface side of the substrate shown in FIG. 3.
  • 4 is a cross-sectional view showing the uneven structure on the side surface of the substrate shown in FIGS. 2 and 3.
  • FIG. 13 is a diagram showing a solar cell module according to a modified example of the first embodiment, viewed from the light receiving surface side.
  • FIG. 13 is a view of a solar cell according to a modified example of the first embodiment, viewed from the light-receiving surface side.
  • FIG. 3 is a cross-sectional view showing an uneven structure in the center of the light-receiving surface side of the substrate shown in FIG. 2 (second embodiment);
  • 3 is a cross-sectional view showing an uneven structure of a peripheral portion on the light-receiving surface side of the substrate shown in FIG. 2 (second embodiment);
  • FIG. 1 is a view of a solar cell module according to a first embodiment as viewed from the light receiving surface side.
  • the solar cell module 100 shown in Fig. 1 includes a plurality of solar cells 1 arranged two-dimensionally at equal intervals.
  • the solar cells 1 are connected in series and/or parallel by known interconnectors (not shown), such as tabs.
  • the solar cells 1 are sealed by a light receiving surface protection member, a back surface protection member, and a sealing material (not shown).
  • FIG. 2 is a view of the solar cell according to the first embodiment as viewed from the light-receiving surface side
  • Fig. 3 is a view of the solar cell according to the first embodiment as viewed from the back surface side
  • Fig. 4 is a cross-sectional view of the solar cell shown in Fig. 3 along line IV-IV.
  • the solar cell 1 shown in Figs. 2 to 4 is a back-contact type (also called back surface junction type or back surface electrode type) heterojunction solar cell.
  • the solar cell 1 includes a crystalline silicon substrate 11 having two main surfaces, and the main surface of the substrate 11 has a first region 7 and a second region 8.
  • the first region 7 has a so-called comb-like shape and has multiple finger portions 7f that correspond to the teeth of the comb, and busbar portions 7b that correspond to the supports of the teeth of the comb.
  • the busbar portions 7b extend in a first direction (X direction) along one side of the substrate 11, and the finger portions 7f extend from the busbar portions 7b in a second direction (Y direction) that intersects with the first direction.
  • the second region 8 has a so-called comb shape, and has multiple finger portions 8f that correspond to the teeth of the comb, and a busbar portion 8b that corresponds to the support portion of the teeth of the comb.
  • the busbar portion 8b extends in a first direction (X direction) along one side portion of the substrate 11 that faces the other side portion, and the finger portion 8f extends in a second direction (Y direction) from the busbar portion 8b.
  • the finger portions 7f and 8f are strip-shaped extending in the second direction (Y direction) and are arranged alternately in the first direction (X direction).
  • the first region 7 and the second region 8 may be formed in a stripe pattern.
  • the solar cell 1 comprises a crystalline silicon substrate 11, and a passivation layer 13 and an optical adjustment layer 15, which are stacked in this order on the light-receiving surface side of the substrate 11.
  • the solar cell 1 also comprises a passivation layer 23, a first conductivity type semiconductor layer 25, and a first electrode layer 27, which are stacked in this order on a portion (first region 7) of the back surface side of the substrate 11.
  • the solar cell 1 also comprises a passivation layer 33, a second conductivity type semiconductor layer 35, and a second electrode layer 37, which are stacked in this order on another portion (second region 8) of the back surface side of the substrate 11.
  • the substrate 11 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon.
  • the substrate 11 is, for example, an n-type substrate in which a crystalline silicon material is doped with an n-type dopant.
  • the substrate 11 may be, for example, a p-type substrate in which a crystalline silicon material is doped with a p-type dopant.
  • An example of an n-type dopant is phosphorus (P).
  • An example of a p-type dopant is boron (B).
  • the substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light-receiving surface side and generates photocarriers (electrons and holes).
  • the dark current is relatively small, and a relatively high output (stable output regardless of illuminance) can be obtained even when the intensity of the incident light is low.
  • the substrate 11 has a pyramidal micro-uneven structure, known as a texture structure, on the light-receiving surface side. This reduces the reflection of incident light on the light-receiving surface, improving the light trapping effect of the substrate 11.
  • the back side of the substrate 11 has a pyramidal, fine uneven structure called a texture structure. This increases the efficiency of collecting light that passes through the substrate 11 without being absorbed.
  • the side surface of the substrate 11 has a pyramidal, fine uneven structure called a texture structure.
  • Passivation layer 13 is formed on the light-receiving surface side of substrate 11.
  • Passivation layer 23 is formed in first region 7 on the back side of substrate 11.
  • Passivation layer 33 is formed in second region 8 on the back side of substrate 11.
  • Passivation layers 13, 23, and 33 are formed of a material whose main component is, for example, an intrinsic (i-type) amorphous silicon material. Passivation layers 13, 23, and 33 suppress recombination of carriers generated in substrate 11 and increase carrier recovery efficiency.
  • the optical adjustment layer 15 is formed on the passivation layer 13 on the light-receiving surface side of the substrate 11.
  • the optical adjustment layer 15 functions as an anti-reflection layer that prevents reflection of incident light, and also functions as a protective layer that protects the light-receiving surface side of the substrate 11 and the passivation layer 13.
  • the optical adjustment layer 15 is formed of an insulating material, for example, silicon oxide (SiO), silicon nitride (SiN), or a composite thereof such as silicon oxynitride (SiON).
  • the first conductive type semiconductor layer 25 is formed on the passivation layer 23, i.e., in the first region 7 on the back side of the substrate 11.
  • the second conductive type semiconductor layer 35 is formed on the passivation layer 33, i.e., in the second region 8 on the back side of the substrate 11. That is, the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 have a band-like shape and extend in the Y direction.
  • the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 are alternately arranged in the X direction. A portion of the second conductive type semiconductor layer 35 may overlap a portion of the adjacent first conductive type semiconductor layer 25 (not shown).
  • the first conductive type semiconductor layer 25 is formed, for example, from an amorphous silicon material.
  • the first conductive type semiconductor layer 25 is, for example, a p-type semiconductor layer in which an amorphous silicon material is doped with a p-type dopant (for example, the above-mentioned boron (B)).
  • a p-type dopant for example, the above-mentioned boron (B)
  • the second conductive type semiconductor layer 35 is formed, for example, from an amorphous silicon material.
  • the second conductive type semiconductor layer 35 is, for example, an n-type semiconductor layer in which an amorphous silicon material is doped with an n-type dopant (for example, the above-mentioned phosphorus (P)).
  • P phosphorus
  • the first conductive type semiconductor layer 25 may be an n-type semiconductor layer
  • the second conductive type semiconductor layer 35 may be a p-type semiconductor layer.
  • the first electrode layer 27 is formed on the first conductive type semiconductor layer 25, i.e., in the first region 7 on the back side of the substrate 11.
  • the second electrode layer 37 is formed on the second conductive type semiconductor layer 35, i.e., in the second region 8 on the back side of the substrate 11.
  • the first electrode layer 27 and the second electrode layer 37 are strip-shaped and extend in the Y direction.
  • the first electrode layer 27 and the second electrode layer 37 are alternately provided in the X direction.
  • the first electrode layer 27 is formed on the first conductivity type semiconductor layer 25, and the second electrode layer 37 is formed on the second conductivity type semiconductor layer 35.
  • the first electrode layer 27 has a transparent electrode layer 28 and a metal electrode layer 29 formed in that order on the first conductivity type semiconductor layer 25.
  • the second electrode layer 37 has a transparent electrode layer 38 and a metal electrode layer 39 formed in that order on the second conductivity type semiconductor layer 35.
  • the transparent electrode layers 28, 38 are formed from a transparent conductive material.
  • transparent conductive materials include ITO (Indium Tin Oxide: a composite oxide of indium oxide and tin oxide).
  • the metal electrode layers 29, 39 are formed from a conductive paste material containing, for example, a metal powder such as silver.
  • Fig. 5 is a cross-sectional view showing the uneven structure of the central portion Af1 on the light-receiving surface side of the substrate 11 shown in Fig. 2
  • Fig. 6 is a cross-sectional view showing the uneven structure of the peripheral portion Af2 on the light-receiving surface side of the substrate 11 shown in Fig. 2.
  • Fig. 7 is a cross-sectional view showing the uneven structure of the central portion Ar1 on the back surface side of the substrate 11 shown in Fig. 3
  • Fig. 8 is a cross-sectional view showing the uneven structure of the peripheral portion Ar2 on the back surface side of the substrate 11 shown in Fig. 3.
  • Fig. 9 is a cross-sectional view showing the uneven structure of the side surface As of the substrate 11 shown in Figs. 2 and 3.
  • the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the uneven structure of the substrate 11 is reflected in the light-receiving surface of the solar cell 1.
  • the radius of curvature of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the film thickness of the peripheral portion Af2 on the light-receiving surface side is thinner than the film thickness of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the top portion of the uneven structure in the peripheral portion Ar2 on the back side is larger than the radius of curvature Rr1 of the top portion of the uneven structure in the central portion Ar1 on the back side.
  • anisotropic etching is performed on the light-receiving surface side and back surface side of the crystalline silicon substrate 11 to form a pyramidal fine uneven structure called a texture structure (crystalline silicon substrate formation process). At this time, anisotropic etching is also performed on the side surface of the crystalline silicon substrate 11, and a pyramidal fine uneven structure is formed in the same way as on the light-receiving surface side and back surface side.
  • An example of the etching solution is an alkaline solution such as an aqueous solution of potassium hydroxide.
  • the flow rate of the etching solution in the peripheral portion Af2 on the light-receiving surface side is controlled to be faster than the flow rate of the etching solution in the central portion Af1 on the light-receiving surface side.
  • the flow rate of the etching solution in the peripheral portion Ar2 on the back surface side is controlled to be faster than the flow rate of the etching solution in the central portion Ar1 on the back surface side.
  • the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side, the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side, the radius of curvature Rr1 of the top portion of the uneven structure of the central portion Ar1 on the back surface side, the radius of curvature Rr2 of the top portion of the uneven structure of the peripheral portion Ar2 on the back surface side, and the radius of curvature Rs of the top portion of the uneven structure on the side surface As satisfy the following relationship.
  • the passivation layer 13 and the optical adjustment layer 15 are formed on the entire light receiving surface of the substrate 11 (optical adjustment layer formation process).
  • the passivation layer 13 and the optical adjustment layer 15 can be formed, for example, by CVD (chemical vapor deposition) or PVD (physical vapor deposition).
  • the uneven structure of the substrate 11 is reflected on the light-receiving surface of the solar cell 1, and the radius of curvature of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side of the solar cell 1 is greater than the radius of curvature of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side. Also, in the passivation layer 13 and optical adjustment layer 15 of the solar cell 1, the film thickness of the peripheral portion Af2 on the light-receiving surface side is thinner than the film thickness of the central portion Af1 on the light-receiving surface side.
  • a passivation layer 23 and a first conductive type semiconductor layer 25 are formed on a portion of the back surface of the substrate 11, specifically in the first region 7 (semiconductor layer formation process).
  • a passivation layer material film and a first conductive type semiconductor layer material film may be formed on the entire back surface of the substrate 11 using a CVD method or a PVD method, and then the passivation layer 23 and the first conductive type semiconductor layer 25 may be patterned using a resist generated using a photolithography technique or a printing technique, or an etching method using a metal mask.
  • examples of etching solutions for p-type semiconductor layer material films include acidic solutions such as hydrofluoric acid containing ozone or a mixture of nitric acid and hydrofluoric acid, and examples of etching solutions for n-type semiconductor layer material films include alkaline solutions such as an aqueous solution of potassium hydroxide.
  • a mask may be used to simultaneously form and pattern the passivation layer 23 and the first conductive type semiconductor layer 25.
  • a passivation layer 33 and a second conductive type semiconductor layer 35 are formed on another part of the back side of the substrate 11, specifically in the second region 8 (semiconductor layer formation process).
  • a passivation layer material film and a second conductive type semiconductor layer material film may be formed on the entire back side of the substrate 11 using a CVD method or a PVD method, and then the passivation layer 33 and the second conductive type semiconductor layer 35 may be patterned using a resist generated using a photolithography technique or a printing technique, or an etching method using a metal mask.
  • a mask may be used to simultaneously form and pattern the passivation layer 33 and the second conductive type semiconductor layer 35.
  • the order in which the passivation layers 13, 23, 33, the optical adjustment layer 15, the first conductive type semiconductor layer 25, and the second conductive type semiconductor layer 35 are formed is not limited.
  • a first electrode layer 27 and a second electrode layer 37 are formed on the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 on the back side of the substrate 11, specifically in the first region 7 and the second region 8 (electrode layer formation process).
  • a transparent electrode layer material film may be formed on the entire back surface of the substrate 11 using a CVD or PVD method, and then the transparent electrode layers 28, 38 may be patterned using a resist generated using a photolithography or printing technique, or an etching method using a metal mask.
  • an etching solution for the transparent electrode layer material film for example, hydrochloric acid or an aqueous solution of ferric chloride is used.
  • a metal electrode layer 29 is formed on the transparent electrode layer 28, and a metal electrode layer 39 is formed on the transparent electrode layer 38, thereby forming the first electrode layer 27 and the second electrode layer 37.
  • the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side, and the uneven structure of the substrate 11 is reflected in the light-receiving surface of the solar cell 1, and in the solar cell 1, the radius of curvature of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the solar cell 1 can be viewed three-dimensionally within the solar cell module 100, and the color distribution inside the solar cell module 100 becomes less noticeable.
  • the film thickness of the peripheral portion Af2 on the light-receiving surface side is thinner than the film thickness of the central portion Af1 on the light-receiving surface side. In this way, when the film thickness of the peripheral portion Af2 on the light-receiving surface side becomes thinner, the reflection of light at the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side increases, and for example, it appears white.
  • the solar cell 1 can be viewed three-dimensionally within the solar cell module 100, and the color distribution inside the solar cell module 100 becomes less noticeable.
  • chipping may occur at the edge of the substrate 11.
  • the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the top portion of the uneven structure of the peripheral portion Ar2 on the back surface side is larger than the radius of curvature Rr1 of the top portion of the uneven structure of the central portion Ar1 on the back surface side.
  • these radii of curvature satisfy the following relational expression.
  • anisotropic etching forms an uneven structure not only on the light-receiving surface and back surface of the substrate 11, but also on the side surfaces (end surfaces). Furthermore, chipping is likely to occur in the uneven structure on the side surfaces of the ends of the substrate 11 (periphery of the light-receiving surface, periphery of the back surface, side surfaces).
  • the present invention is not limited to the above-mentioned first embodiment and various modifications and variations are possible.
  • the above-mentioned first embodiment illustrates a form in which a large-sized semiconductor substrate (wafer) of a specified size (e.g., a 6-inch semi-square shape) is used as is.
  • the present invention is not limited to this, and may be a form in which a half-cut solar cell is used in which a large-sized semiconductor substrate of a specified size is cut into two pieces, as shown in Figures 10 and 11, or a form in which a solar cell is used in which a large-sized semiconductor substrate of a specified size is cut into three or more pieces.
  • the radius of curvature Rf2 of the top portion of the uneven structure of at least a portion of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side
  • the radius of curvature of the top portion of the uneven structure of at least a portion of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the film thickness of at least a portion of the peripheral portion Af2 on the light-receiving surface side is thinner than the film thickness of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the apex portion of the uneven structure of at least a part of the peripheral portion Ar2 on the back side is larger than the radius of curvature Rr1 of the apex portion of the uneven structure of the central portion Ar1 on the back side. Furthermore, it is sufficient that these radii of curvature satisfy the following relational expression.
  • the configuration of the solar cell module 100 according to the second embodiment is the same as the configuration of the solar cell module 100 according to the first embodiment shown in FIG.
  • the configuration of the solar cell 1 according to the second embodiment is the same as the configuration of the solar cell 1 according to the first embodiment shown in FIGS. 2 to 4, except for the following points.
  • Figure 12 is a cross-sectional view showing the uneven structure of the central portion Af1 on the light-receiving surface side of the substrate 11 shown in Figure 2
  • Figure 13 is a cross-sectional view showing the uneven structure of the peripheral portion Af2 on the light-receiving surface side of the substrate 11 shown in Figure 2.
  • the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the top portion of the uneven structure in the peripheral portion Ar2 on the back side is larger than the radius of curvature Rr1 of the top portion of the uneven structure in the central portion Ar1 on the back side.
  • the radius of curvature Rs of the top portion of the uneven structure on the side As is greater than the radius of curvature Rf1 of the top portion of the uneven structure on the central portion Af1 on the light receiving surface side, and the radius of curvature Rr1 of the top portion of the uneven structure on the central portion Ar1 on the back surface side.
  • anisotropic etching is performed on the light receiving surface side and back surface side of the crystalline silicon substrate 11 to form a pyramidal fine uneven structure called a texture structure (crystalline silicon substrate formation process). At this time, anisotropic etching is also performed on the side surface of the crystalline silicon substrate 11 to form a pyramidal fine uneven structure called a texture structure.
  • An example of the etching solution is an alkaline solution such as an aqueous solution of potassium hydroxide.
  • the flow rate of the etching solution in the peripheral portion Af2 on the light-receiving surface side is controlled to be faster than the flow rate of the etching solution in the central portion Af1 on the light-receiving surface side.
  • the flow rate of the etching solution in the peripheral portion Ar2 on the back surface side is controlled to be faster than the flow rate of the etching solution in the central portion Ar1 on the back surface side.
  • the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side, the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side, the radius of curvature Rr1 of the top portion of the uneven structure of the central portion Ar1 on the back surface side, the radius of curvature Rr2 of the top portion of the uneven structure of the peripheral portion Ar2 on the back surface side, and the radius of curvature Rs of the top portion of the uneven structure on the side surface As satisfy the following relationship.
  • the passivation layer 13 and the optical adjustment layer 15 are formed on the entire light receiving surface of the substrate 11 (optical adjustment layer formation process).
  • the passivation layer 13 and the optical adjustment layer 15 can be formed, for example, by CVD (chemical vapor deposition) or PVD (physical vapor deposition).
  • a passivation layer 23 and a first conductive type semiconductor layer 25 are formed on a portion of the back side of the substrate 11, specifically in the first region 7 (semiconductor layer formation process).
  • a passivation layer material film and a first conductive type semiconductor layer material film may be formed on the entire back side of the substrate 11 using a CVD method or a PVD method, and then the passivation layer 23 and the first conductive type semiconductor layer 25 may be patterned using a resist generated using a photolithography technique or a printing technique, or an etching method using a metal mask.
  • examples of etching solutions for p-type semiconductor layer material films include acidic solutions such as hydrofluoric acid containing ozone or a mixture of nitric acid and hydrofluoric acid, and examples of etching solutions for n-type semiconductor layer material films include alkaline solutions such as an aqueous solution of potassium hydroxide.
  • a mask may be used to simultaneously form and pattern the passivation layer 23 and the first conductive type semiconductor layer 25.
  • a passivation layer 33 and a second conductive type semiconductor layer 35 are formed on another part of the back side of the substrate 11, specifically in the second region 8 (semiconductor layer formation process).
  • a passivation layer material film and a second conductive type semiconductor layer material film may be formed on the entire back side of the substrate 11 using a CVD method or a PVD method, and then the passivation layer 33 and the second conductive type semiconductor layer 35 may be patterned using a resist generated using a photolithography technique or a printing technique, or an etching method using a metal mask.
  • a mask may be used to simultaneously form and pattern the passivation layer 33 and the second conductive type semiconductor layer 35.
  • the order in which the passivation layers 13, 23, 33, the optical adjustment layer 15, the first conductive type semiconductor layer 25, and the second conductive type semiconductor layer 35 are formed is not limited.
  • a first electrode layer 27 and a second electrode layer 37 are formed on the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 on the back side of the substrate 11, specifically in the first region 7 and the second region 8 (electrode layer formation process).
  • a transparent electrode layer material film may be formed on the entire back surface of the substrate 11 using a CVD or PVD method, and then the transparent electrode layers 28, 38 may be patterned using a resist generated using a photolithography or printing technique, or an etching method using a metal mask.
  • An example of an etching solution for the transparent electrode layer material film is an aqueous solution of hydrochloric acid or ferric chloride.
  • a metal electrode layer 29 is formed on the transparent electrode layer 28, and a metal electrode layer 39 is formed on the transparent electrode layer 38, thereby forming the first electrode layer 27 and the second electrode layer 37.
  • chipping may occur at the edge of the substrate 11.
  • anisotropic etching forms an uneven structure not only on the light-receiving surface and back surface but also on the side surfaces (end surfaces) of substrate 11.
  • ends of substrate 11 peripheral portion of the light-receiving surface, peripheral portion of the back surface, and side surfaces
  • chipping is likely to occur in the uneven structure on the side surfaces.
  • the radius of curvature Rs of the top portion of the uneven structure on the side surface As is larger than the radius of curvature Rf1 of the top portion of the uneven structure on the central portion Af1 on the light-receiving surface side, and the radius of curvature Rr1 of the top portion of the uneven structure on the central portion Ar1 on the back surface side.
  • the radius of curvature Rs of the top portion of the uneven structure on the side surface in particular to be larger chipping at the edge of the substrate 11 can be reduced. This makes it possible to improve the productivity of the solar cell 1.
  • the radius of curvature Rf2 of the top portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side is larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the top portion of the uneven structure of the peripheral portion Ar2 on the back side is larger than the radius of curvature Rr1 of the top portion of the uneven structure of the central portion Ar1 on the back side.
  • the present invention has been described above, but the present invention is not limited to the above-mentioned second embodiment, and various modifications and variations are possible.
  • the above-mentioned second embodiment illustrates a form in which a large-sized semiconductor substrate (wafer) of a specified size (e.g., a 6-inch semi-square shape) is used as is.
  • the present invention is not limited to this, and may be a form in which a half-cut solar cell is used in which a large-sized semiconductor substrate of a specified size is cut into two pieces, as shown in Figures 10 and 11, or a form in which a solar cell is used in which a large-sized semiconductor substrate of a specified size is cut into three or more pieces.
  • the radius of curvature Rf2 of the top portion of at least a portion of the uneven structure of the peripheral portion Af2 on the light-receiving surface side should be larger than the radius of curvature Rf1 of the top portion of the uneven structure of the central portion Af1 on the light-receiving surface side.
  • the radius of curvature Rr2 of the top portion of at least a portion of the uneven structure in the peripheral portion Ar2 on the back side may be greater than the radius of curvature Rr1 of the top portion of the uneven structure in the central portion Ar1 on the back side.
  • a back-contact type solar cell is exemplified.
  • the present invention is not limited to this, and can also be applied to a double-sided electrode type solar cell.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un élément de cellule solaire qui présente une irrégularité de couleur réduite de chaque surface de réception de lumière lorsqu'il est formé en un module. Un élément de cellule solaire (1) selon la présente invention est un élément de cellule solaire à contact arrière qui est pourvu : d'un substrat (11) de silicium cristallin qui a une structure en relief sur le côté de surface de réception de lumière ; une couche de réglage optique qui est formée sur le côté de surface de réception de lumière du substrat (11) ; une première couche d'électrode et une couche semi-conductrice qui a un premier type de conductivité, qui sont formées sur une partie du côté de surface arrière du substrat (11) ; et une seconde couche d'électrode et une couche semi-conductrice qui a un second type de conductivité, qui sont formées sur une autre partie du côté de surface arrière du substrat (11). Par rapport au substrat (11), le rayon de courbure d'une partie supérieure de la structure en relief dans au moins une partie d'une partie périphérique (Af2) sur le côté de surface de réception de lumière est supérieur au rayon de courbure d'une partie supérieure de la structure en relief dans une partie centrale (Af1) sur le côté de surface de réception de lumière. La structure en relief du substrat (11) est réfléchie dans la surface de réception de lumière de l'élément de cellule solaire (1). Par rapport à l'élément de cellule solaire (1), le rayon de courbure d'une partie supérieure de la structure en relief dans au moins une partie de la partie périphérique (Af2) sur le côté de surface de réception de lumière est supérieur au rayon de courbure d'une partie supérieure de la structure en relief dans la partie centrale (Af1) sur le côté de surface de réception de lumière.
PCT/JP2024/008486 2023-03-09 2024-03-06 Élément de cellule solaire, module de cellule solaire et procédé de production d'un élément de cellule solaire Pending WO2024185804A1 (fr)

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CN202480013580.XA CN120731677A (zh) 2023-03-09 2024-03-06 太阳能电池单元、太阳能电池模块以及太阳能电池单元的制造方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013018194A1 (fr) * 2011-08-02 2013-02-07 三菱電機株式会社 Procédé de fabrication de cellule solaire et système de fabrication de cellule solaire
CN103137721A (zh) * 2011-11-28 2013-06-05 茂迪股份有限公司 硅基板、太阳能电池基板的制造方法及太阳能电池
JP2015185587A (ja) * 2014-03-20 2015-10-22 シャープ株式会社 光電変換素子および光電変換素子の製造方法
CN107946378A (zh) * 2016-10-12 2018-04-20 英属开曼群岛商精曜有限公司 太阳能电池结构
JP6598091B2 (ja) * 2012-10-23 2019-10-30 パナソニックＩｐマネジメント株式会社 太陽電池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013018194A1 (fr) * 2011-08-02 2013-02-07 三菱電機株式会社 Procédé de fabrication de cellule solaire et système de fabrication de cellule solaire
CN103137721A (zh) * 2011-11-28 2013-06-05 茂迪股份有限公司 硅基板、太阳能电池基板的制造方法及太阳能电池
JP6598091B2 (ja) * 2012-10-23 2019-10-30 パナソニックＩｐマネジメント株式会社 太陽電池
JP2015185587A (ja) * 2014-03-20 2015-10-22 シャープ株式会社 光電変換素子および光電変換素子の製造方法
CN107946378A (zh) * 2016-10-12 2018-04-20 英属开曼群岛商精曜有限公司 太阳能电池结构

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