[go: up one dir, main page]

WO2023216677A1 - Module de rétroéclairage et son procédé de préparation, et écran d'affichage à cristaux liquides - Google Patents

Module de rétroéclairage et son procédé de préparation, et écran d'affichage à cristaux liquides Download PDF

Info

Publication number
WO2023216677A1
WO2023216677A1 PCT/CN2023/077936 CN2023077936W WO2023216677A1 WO 2023216677 A1 WO2023216677 A1 WO 2023216677A1 CN 2023077936 W CN2023077936 W CN 2023077936W WO 2023216677 A1 WO2023216677 A1 WO 2023216677A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
backlight module
fluorescence
quenched
led light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/077936
Other languages
English (en)
Chinese (zh)
Inventor
冯亚军
许怀书
李健林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huizhou Vision New Technology Co Ltd
Original Assignee
Huizhou Vision New Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huizhou Vision New Technology Co Ltd filed Critical Huizhou Vision New Technology Co Ltd
Publication of WO2023216677A1 publication Critical patent/WO2023216677A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133614Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133615Edge-illuminating devices, i.e. illuminating from the side
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a backlight module, a preparation method thereof, and a liquid crystal display panel.
  • Liquid crystal display devices have many advantages such as thin body, power saving, and no radiation, and have been widely used.
  • Most of the liquid crystal display devices currently on the market are backlight-type liquid crystal display devices, which include a liquid crystal panel and a backlight module.
  • the working principle of the LCD panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates.
  • the liquid crystal molecules are controlled to change direction by whether they are energized or not, and the light from the backlight module is refracted. Come out to produce a picture. Since the LCD panel itself does not emit light, it requires the light source provided by the backlight module to display images normally. Therefore, the backlight module has become one of the key components of the LCD device.
  • Backlight modules are divided into two types: side-type backlight modules and direct-type backlight modules according to the different incident positions of the light sources.
  • the edge-type backlight module installs an LED (LightEmitting Diode) light bar on the edge of the back panel behind the LCD panel.
  • the light emitted by the LED light bar enters the light from the side of the light guide plate (LGP, Light Guide Plate).
  • the surface enters the light guide plate, and after reflection and diffusion, it is emitted from the light exit surface of the light guide plate, and then passes through the optical film group to form a surface light source and provides it to the LCD panel;
  • the direct backlight module sets the LED light source behind the LCD panel to directly form a surface light source.
  • the light source is provided to the LCD panel.
  • a direct-lit backlight module a diffusion plate is required to diffuse light and support the optical film; the light emitted by the light source is effectively diffused through the diffusion plate, which can achieve better optical effects.
  • Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel, aiming to improve the problem of poor display effects of existing backlight modules.
  • an embodiment of the present disclosure provides a backlight module, including: a quantum dot element and an LED light source disposed on one side of the quantum dot element; wherein the material of the quantum dot element includes quantum dots quenched by fluorescence. Point materials.
  • the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 to 520 nm.
  • the quantum dot element is a quantum dot film, a quantum dot diffusion plate or a quantum dot coating.
  • the backlight module is a direct backlight module, and the LED light sources are distributed in an array; wherein, the quantum dot elements are quantum dot diffusion plates, and the light output between the quantum dot diffusion plates and the LED light sources is Face to face.
  • the backlight module is a direct-type backlight module, and the LED light sources are distributed in an array.
  • the backlight module also includes a diffusion plate, and the diffusion plate is opposite to the light exit surface of the LED light source; wherein,
  • the quantum dot element is a quantum dot film or a quantum dot coating, and the quantum dot film or quantum dot coating is provided on a side of the diffusion plate away from the LED light source.
  • the backlight module is an edge-type backlight module, and the backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED light bar provided on the end surface of the light guide plate, so The LED light source is provided on the LED light bar; wherein the quantum dot element is a quantum dot film or a quantum dot coating.
  • the quantum dot film includes: a quantum dot glue layer and a PET layer coated on the upper and lower surfaces of the quantum dot glue layer; the material of the quantum dot glue layer includes: the fluorescence quenched quantum dot material and colloid.
  • the thickness of the quantum dot glue layer is 40 ⁇ 100 ⁇ m
  • the thickness of the PET layer is 60 ⁇ 120 ⁇ m
  • the total thickness of the quantum dot film is 180 ⁇ 320 ⁇ m.
  • the material of the quantum dot diffusion plate includes: the fluorescence-quenched quantum dot material and light-transmitting plastic; the light-transmitting plastic includes at least one of PS, PC or PMMA.
  • the quantum dot diffusion plate is a single layer, and the material of the quantum dot diffusion plate is uniformly mixed quantum dot material that is quenched by fluorescence and light-transmitting plastic.
  • the quantum dot diffusion plate is multi-layered, and the structure of the quantum dot diffusion plate is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle.
  • the quantum dot coating includes: the fluorescence quenched quantum dot material and colloid.
  • the LED light source includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from ⁇ -SIAION and/or nitride fluorescence pink.
  • the emission wavelength of the green phosphor is 490 ⁇ 600nm.
  • the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from at least one of Fe 3+ , Co 2+ , Ag + , o-nitrophenol, and chlorogenic acid. kind.
  • the quantum dots are selected from at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.
  • embodiments of the present disclosure also provide a method for preparing a backlight module, including the steps of: providing a quantum dot material quenched by fluorescence; making the quantum dot material quenched by fluorescence into a quantum dot element; and An LED light source is prepared on one side of the quantum dot element.
  • said providing a quantum dot material that is quenched by fluorescence includes the steps of: chemically synthesizing quantum dots; using solvents and antisolvents to centrifuge and purify the synthesized quantum dot colloid to remove excess long-chain ligands;
  • the quantum dot colloid purified by centrifugation is dispersed in an organic solvent to obtain a quantum dot solution; the concentration of the quantum dot solution is adjusted to about 10 mg/mL;
  • the quantum dot material is dispersed in the solvent; surfactant is added to prevent a large amount of aggregation when the fluorescence quenched quantum dot material is prepared into powder, and to ensure that the quantum dot powder is evenly dispersed when mixed with the substrate.
  • an embodiment of the present disclosure also provides a liquid crystal display panel, including the backlight module described in the first aspect.
  • an embodiment of the present disclosure also provides a liquid crystal display panel, including a backlight module prepared by the preparation method described in the second aspect.
  • the backlight module uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source, taking advantage of the characteristics of the fluorescence quenched quantum dots to absorb light but not emit light, as well as the adjustable absorption band. , absorbing the light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have high stability, low reliability process requirements and low cost The advantages.
  • FIG. 1 is a schematic cross-sectional structural diagram of a backlight module provided by an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional structural diagram of a backlight module provided by another embodiment of the present disclosure.
  • FIG. 3 is a schematic cross-sectional structural diagram of a backlight module provided by yet another embodiment of the present disclosure.
  • Figure 4 is a schematic diagram of the LED backlight spectrum and the RGB (red, green and blue) three color transmission bands of the LCD screen in an embodiment of the present disclosure.
  • Figure 5 is a schematic cross-sectional structural diagram of a quantum dot film provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic flowchart of a method for manufacturing a backlight module according to an embodiment of the present disclosure.
  • 11-LED light source 12-Quantum dot diffusion plate; 13-Lower brightness enhancement sheet: 14-Composite film; 15-Diffusion plate; 16-Quantum dot film; 161-PET layer; 162-Quantum dot adhesive layer; 17-Quantum dots Coating; 10-backlight module; 20-LCD; 100-LCD panel.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features.
  • features defined as “first” and “second” may explicitly or implicitly include one or more of the described features.
  • “plurality” means two or more than two, unless otherwise expressly and specifically limited.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • the word "exemplary” is used to mean “serving as an example, illustration, or illustration.” Any embodiment described as “exemplary” in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments.
  • the following description is presented to enable any person skilled in the art to make and use the present disclosure. In the following description, details are set forth for the purpose of explanation. It will be understood that one of ordinary skill in the art will recognize that the present disclosure may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail to avoid obscuring the disclosure with unnecessary detail. Thus, the present disclosure is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the disclosed principles and features.
  • Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel. Each is explained in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments. In addition, in the description of the present disclosure, the term “including” means “including but not limited to.” Various embodiments of the present disclosure may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a hard limit to the scope of the present disclosure; therefore, the described range should be considered The description has specifically disclosed all possible subranges as well as the single numerical values within that range. Whenever a numerical range is stated herein, it is intended to include any cited number (fractional or whole) within the indicated range.
  • the traditional LED light source is generally a blue light chip plus red phosphor and green phosphor.
  • the half-peak width of the emission spectrum of green phosphor and red phosphor is wider, which will cause red-green and blue-green crosstalk. It seriously affects the color gamut, thereby affecting the display effect.
  • Luminescent quantum dot materials can achieve a higher color gamut and can be used in quantum dot backlight modules.
  • the structure of the quantum dot backlight module is mainly quantum dot film or quantum dot diffusion plate plus blue LED.
  • the cost of quantum dot film is high, the reliability process requirements of quantum dot diffusion plate are high, and the luminescent quantum dot material will also change over time. The luminous efficiency will gradually decrease over time. Once the luminescent quantum dot material fails, the entire LCD panel will not be able to display images normally.
  • An embodiment of the present disclosure provides a backlight module 10 including: a quantum dot element and an LED light source 11 disposed on one side of the quantum dot element; wherein, the quantum dot element
  • the material of the dot element includes quantum dot material that is quenched by fluorescence.
  • the backlight module 10 uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source 11, taking advantage of the characteristics of fluorescence quenched quantum dots to absorb light but not emit light, and the adjustable absorption band. characteristics, absorbing light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, because the light-absorbing performance of quantum dots has a longer life than the luminescent performance, compared with luminescent quantum dot materials, fluorescent Quenched quantum dot materials have the advantages of high stability, low reliability process requirements and low cost.
  • the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 ⁇ 520nm, such as 480 ⁇ 485nm, 480 ⁇ 490nm, 480 ⁇ 495nm, 480 ⁇ 500nm, 480 ⁇ 505nm, 480 ⁇ 510nm, 480 ⁇ 515nm, 480 ⁇ 520nm, etc.
  • the color gamut of the existing LED light source 11 is mainly affected by the blue-green crosstalk band, and the blue-green crosstalk band range is 480 ⁇ 520nm, in order to obtain a better effect of improving the color gamut.
  • the embodiments of the present disclosure use fluorescence
  • the quenched quantum dot material absorbs the blue-green crosstalk light and can also relatively reduce the intensity of blue light to achieve the purpose of eye protection.
  • quantum dots of the same material have different band gaps with different sizes. Fluorescence quenching is to reduce the fluorescence efficiency of the quantum dot material and maintain the light absorption performance. Changing the absorption band can be achieved by methods known in the art, such as by adjusting The size of the quantum dot material is achieved, and the specific size is not limited here.
  • the backlight module 10 may be a direct-type backlight module or an edge-type backlight module.
  • the quantum dot element may be a quantum dot film 16, a quantum dot diffusion plate 12 or a quantum dot coating 17.
  • the quantum dot element may be a quantum dot film 16, a quantum dot diffusion plate 12 or a quantum dot coating 17.
  • the backlight module 10 is a direct backlight module, and the LED light sources 11 are distributed in an array.
  • the quantum dot element is a quantum dot diffusion plate 12 , and the quantum dot diffusion plate 12 is opposite to the light emitting surface of the LED light source 11 .
  • the backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .
  • the backlight module 10 is a direct-type backlight module, and the LED light sources 11 are distributed in an array.
  • the backlight module 10 also includes a diffusion plate 15.
  • the diffusion plate 15 is opposite to the light-emitting surface of the LED light source 11; wherein, the quantum dot element is a quantum dot film 16 or a quantum dot coating 17, and the quantum dot film 16 or the quantum dot coating 17 is disposed away from the diffusion plate.
  • the backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .
  • the backlight module is an edge-type backlight module (not shown).
  • the backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED provided on the end surface of the light guide plate.
  • a light bar, the LED light source is provided on the LED light bar;
  • the quantum dot element is a quantum dot film or a quantum dot coating.
  • the quantum dot film 16 includes a quantum dot adhesive layer 162 and a PET (polyethylene terephthalate) layer 161 coated on the upper and lower surfaces of the quantum dot adhesive layer,
  • the material of the quantum dot glue layer 162 includes: quantum dot material and colloid that are quenched by fluorescence. Compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have a higher lifespan. Therefore, the quantum dot film 16 in the embodiment of the present disclosure does not need to use a barrier film to improve the reliability of the film, that is, a PET layer. Silicon oxide plating is not required. Therefore, when the quantum dot element is the quantum dot film 16, the backlight module 10 provided by the embodiment of the present disclosure also has the advantage of low cost.
  • the thickness of the quantum dot glue layer 162 is 40 ⁇ 100 ⁇ m
  • the thickness of the PET layer is 60 ⁇ 120 ⁇ m
  • the total thickness of the quantum dot film 16 is 180 ⁇ 320 ⁇ m. Within this thickness range, the quantum dot film 16 has a better effect of improving the color gamut.
  • the material of the quantum dot diffusion plate 12 includes but is not limited to: quantum dot materials that are quenched by fluorescence and light-transmitting plastics, and the light-transmitting plastics include at least one of PS, PC or PMMA.
  • the quantum dot diffusion plate 12 can be a single layer or multiple layers, such as three layers.
  • the material of the quantum dot diffusion plate 12 It is a uniform mixture of fluorescence-quenched quantum dot materials and light-transmitting plastics.
  • the structure of the quantum dot diffusion plate 12 is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle.
  • the thickness of the upper and lower layers is 200 ⁇ 500 ⁇ m, and the total thickness is 1.5 ⁇ 3.0 mm. Within this thickness range, the quantum dot diffusion plate 12 has a better effect of improving the color gamut.
  • the quantum dot coating 17 includes, but is not limited to: fluorescence quenched quantum dot materials and colloids.
  • the colloid is acrylic resin.
  • the LED light source 11 includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from ⁇ -SIAION and/or Nitride phosphor.
  • the phosphors of the LED light source 11 are selected from green phosphors and red YAGA powders, compared with other phosphors, the half-peak width of the emission spectrum of these phosphors is wider. Therefore, when selecting these phosphors, the use of The fluorescence quenched quantum dot material absorbs part of the crosstalk band, narrows the half-peak width, and improves the color gamut and display effect even more significantly.
  • the red phosphor is a new red powder, matching the fluorescence quenched quantum dot material with the new red powder can achieve the same display effect of improved color gamut as the new red powder with a low-concentration luminescent quantum dot material diffusion plate.
  • the emission wavelength of the green phosphor is 490 ⁇ 600nm, and in particular, the main emission peak is 529nm. After adjusting the green phosphor emission wavelength, the emission color gamut can be greater than or equal to 93%. It should be noted that the emission wavelength can be adjusted by methods known in the art, such as adjusting the element ratio of the phosphor, which is not specifically limited here.
  • the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from but not limited to small molecules or metal ions, such as Fe 3+ , Co 2+ , Ag + , At least one of o-nitrophenol and chlorogenic acid.
  • the quantum dots in the fluorescence quenched quantum dot material are selected from, but are not limited to, at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.
  • An embodiment of the present disclosure also provides a method for preparing a backlight module, as shown in Figure 6, including the steps:
  • step S10 providing the quantum dot material quenched by fluorescence includes the steps:
  • quantum dots such as CdSe, CdTe, InP, silicon quantum dots, and graphene quantum dots.
  • the organic solvent can be selected from at least one of chloroform, toluene, cyclohexane, n-octane and carbon tetrachloride.
  • step S20 making the fluorescence quenched quantum dot material into a quantum dot element includes the step of: making the fluorescence quenched quantum dot material into a quantum dot element, and the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot diffusion plate, quantum dot film or quantum dot coating can be prepared using methods known in the art.
  • the quantum dot film can use a coating machine to combine a quantum dot solution with acrylic acid.
  • the system is prepared by mixing glue.
  • the mass ratio of quantum dot solution to glue is (1 ⁇ 2):20, for example: 1:20, 1.1:20, 1.2:20, 1.3:20, 1.4:20, 1.5:20, 1.6:20, 1.7:20, 1.8:20, 1.9:20, 2:20, etc.
  • the mass concentration of the quantum dot solution is 5% to 10%, such as 5%, 6%, 7%, 8%, 9%, 10%, etc. Within this density range, the color gamut improvement effect is better.
  • the present disclosure also provides a liquid crystal display panel, including the backlight module provided in any of the above embodiments.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes: an LED light source 11, a quantum dot diffusion plate 12, a lower brightness enhancement sheet 13, and a composite film 14 stacked in sequence from bottom to top.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes stacked from bottom to top: LED light source 11, diffusion plate 15, quantum dot coating 17, lower brightness enhancement sheet 13, and composite film 14.
  • the LCD 20 includes an array substrate and a counter substrate (not shown), which are opposed to each other to form a liquid crystal cell, and the liquid crystal cell is filled with liquid crystal material.
  • the opposite substrate is, for example, a color filter substrate.
  • the pixel electrode of each sub-pixel unit of the array substrate is used to apply an electric field to control the degree of rotation of the liquid crystal material to perform display operations.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes an LED light source, a quantum dot diffusion plate, a lower brightness enhancement sheet, and a composite film stacked in sequence from bottom to top.
  • the red light of the backlight uses new red powder
  • the green light uses 529nm green phosphor.
  • the quantum dot element is a diffusion plate made of CdSe system quantum dot material that has been treated with a quencher for fluorescence quenching.
  • the preparation method includes: mixing the quantum dot material solution and PS particles evenly and using an extruder to co-extrude the upper and lower layers.
  • the first layer is PS
  • the middle layer is a mixed layer of PS and quantum dot material. It can also be a single-layer basis.
  • This embodiment is a three-layer extrusion. Parameters: The total thickness of the upper and lower layers of the three layers is 400 ⁇ m, the middle layer is 700 ⁇ m, and the total thickness is 1.5mm.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot film, lower brightness enhancement sheet, composite membrane.
  • the quantum dot element is a quantum dot film prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher.
  • the quantum dot film has three layers, including a quantum dot glue layer and PET coated on the upper and lower surfaces of the quantum dot glue layer.
  • the preparation method includes: using a film coating machine to mix a quantum dot solution and an acrylic system glue to prepare a quantum dot glue layer, where the mass ratio of the quantum dot solution to the glue is 1:20, and the mass concentration of the quantum dot solution is 7%.
  • the thickness of the glue layer is 60 ⁇ m
  • the thickness of PET is 60 ⁇ m
  • the total thickness of the film is 180 ⁇ m.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot coating, lower brightness enhancement sheet, Composite membrane.
  • the quantum dot element is a quantum dot coating prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher.
  • the glue ratio and quantum dot concentration of the coating are the same as those in Example 2.
  • the basic structure of the comparative example is the same as that of Example 1. The only difference is that there is no quantum dot material that has been fluorescence quenched by the quencher in the diffusion plate.
  • the cross-screen color gamut of Examples 1 to 3 is higher than that of the comparative example.
  • the cross-screen color gamut of Example 1 is 93.8%
  • the cross-screen color gamut of the comparative example is 93.8%. is 92%. It shows that using quantum dot components containing fluorescence-quenched quantum dot materials with LED light sources can improve the color gamut and make the display better. This is due to the fact that fluorescence quenched quantum dots can absorb light in the crosstalk band.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

L'invention concerne un substrat et son procédé de préparation, et écran d'affichage à cristaux liquides. Selon le module de rétroéclairage (10), un élément à points quantiques contenant un matériau à points quantiques trempé par fluorescence est mis en correspondance avec une source de lumière à DEL (11) destinée à être utilisée, et la caractéristique selon laquelle le point quantique trempé par fluorescence absorbe la lumière et n'émet pas de lumière et la caractéristique selon laquelle la bande d'absorption est réglable sont utilisées pour absorber la lumière dans une gamme d'ondes de diaphonie, de telle sorte que la gamme de couleurs est améliorée, et l'effet d'affichage est meilleur. De plus, par comparaison avec un matériau à points quantiques électroluminescents, le matériau à points quantiques trempé par fluorescence présente les avantages d'une stabilité élevée, d'exigences de processus à faible fiabilité et d'un faible coût.
PCT/CN2023/077936 2022-05-13 2023-02-23 Module de rétroéclairage et son procédé de préparation, et écran d'affichage à cristaux liquides Ceased WO2023216677A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210522512.9 2022-05-13
CN202210522512.9A CN114839810A (zh) 2022-05-13 2022-05-13 背光模组及其制备方法、液晶显示面板

Publications (1)

Publication Number Publication Date
WO2023216677A1 true WO2023216677A1 (fr) 2023-11-16

Family

ID=82569822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/077936 Ceased WO2023216677A1 (fr) 2022-05-13 2023-02-23 Module de rétroéclairage et son procédé de préparation, et écran d'affichage à cristaux liquides

Country Status (2)

Country Link
CN (1) CN114839810A (fr)
WO (1) WO2023216677A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118676287A (zh) * 2024-08-23 2024-09-20 镭昱光电科技(苏州)有限公司 Micro-LED显示芯片、显示装置和制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114839810A (zh) * 2022-05-13 2022-08-02 惠州视维新技术有限公司 背光模组及其制备方法、液晶显示面板

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105242449A (zh) * 2015-11-13 2016-01-13 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN105278153A (zh) * 2015-11-13 2016-01-27 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN105301827A (zh) * 2015-11-13 2016-02-03 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN107966855A (zh) * 2017-11-24 2018-04-27 宁波东旭成新材料科技有限公司 一种绿色量子点膜及其背光模组
CN109888131A (zh) * 2019-02-28 2019-06-14 南京中电熊猫平板显示科技有限公司 一种量子点显示装置及其制造方法
JP2019117734A (ja) * 2017-12-27 2019-07-18 優美特創新材料股▲ふん▼有限公司 バックライトモジュール
CN111061084A (zh) * 2019-12-05 2020-04-24 Tcl华星光电技术有限公司 彩膜基板的制备方法及彩膜基板
CN114839810A (zh) * 2022-05-13 2022-08-02 惠州视维新技术有限公司 背光模组及其制备方法、液晶显示面板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410751C (zh) * 2003-09-15 2008-08-13 友达光电股份有限公司 液晶显示器
KR20080029071A (ko) * 2006-09-28 2008-04-03 삼성전자주식회사 확산판, 백라이트 유닛, 액정 표시 장치 및 확산판의 제조방법
SK51202007A3 (sk) * 2006-10-24 2008-08-05 Sumitomo Chemical Company, Limited Prostriedok živice rozptyľujúcej svetlo
KR102638864B1 (ko) * 2016-12-30 2024-02-21 엘지디스플레이 주식회사 광 흡수시트 및 이를 포함하는 표시장치
CN113296313A (zh) * 2021-05-26 2021-08-24 惠州视维新技术有限公司 一种背光模组及液晶显示面板
CN114284417B (zh) * 2021-12-29 2024-04-30 深圳市思坦科技有限公司 颜色转换基板及其制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105242449A (zh) * 2015-11-13 2016-01-13 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN105278153A (zh) * 2015-11-13 2016-01-27 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN105301827A (zh) * 2015-11-13 2016-02-03 深圳市华星光电技术有限公司 量子点彩膜基板的制备方法及量子点彩膜基板
CN107966855A (zh) * 2017-11-24 2018-04-27 宁波东旭成新材料科技有限公司 一种绿色量子点膜及其背光模组
JP2019117734A (ja) * 2017-12-27 2019-07-18 優美特創新材料股▲ふん▼有限公司 バックライトモジュール
CN109888131A (zh) * 2019-02-28 2019-06-14 南京中电熊猫平板显示科技有限公司 一种量子点显示装置及其制造方法
CN111061084A (zh) * 2019-12-05 2020-04-24 Tcl华星光电技术有限公司 彩膜基板的制备方法及彩膜基板
CN114839810A (zh) * 2022-05-13 2022-08-02 惠州视维新技术有限公司 背光模组及其制备方法、液晶显示面板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118676287A (zh) * 2024-08-23 2024-09-20 镭昱光电科技(苏州)有限公司 Micro-LED显示芯片、显示装置和制备方法

Also Published As

Publication number Publication date
CN114839810A (zh) 2022-08-02

Similar Documents

Publication Publication Date Title
KR101460155B1 (ko) 백라이트 유닛 및 이를 구비한 액정 디스플레이 장치
CN104483778B (zh) 发光装置、背光模组及液晶显示装置
US20060072339A1 (en) Backlight module
US10527774B2 (en) Optical film assembly, backlight module and display device
CN1231799C (zh) 着色层材料、滤色片基板及它们的应用
EP3620834A1 (fr) Film de conversion de lumière destiné à être utilisé dans un module de rétroéclairage, module de rétroéclairage et dispositif d'affichage
CN1932370A (zh) 照明设备和具有该照明设备的显示设备
US11175448B2 (en) Light-emitting device and method for fabricating same
CN205103524U (zh) 背光模组及显示装置
WO2023216677A1 (fr) Module de rétroéclairage et son procédé de préparation, et écran d'affichage à cristaux liquides
CN110007508A (zh) 彩膜基板、液晶显示面板及液晶显示装置
US20210080785A1 (en) Backlight module
US20180231830A1 (en) Array substrate and method of manufacturing the same, and display device
WO2016026181A1 (fr) Structure modulaire d'affichage à cristaux liquides en couleur et son module de rétroéclairage
CN101493598B (zh) 显示装置、其制造方法及光线色彩调变方法
US8531626B2 (en) Optical element, liquid crystal display and manufacture method thereof
US10359559B2 (en) Optical film assembly, backlight module and display device
CN102810288B (zh) 背光组件和包括该背光组件的显示装置
KR102512637B1 (ko) 도광판과 이를 포함하는 백라이트 유닛 및 액정표시장치
US12019329B2 (en) Backlight module and quantum dot display device
CN111045253B (zh) 背光模组及液晶显示装置
CN209858903U (zh) 一种复合光学膜、背光装置和显示装置
TWI405005B (zh) 顯示裝置、其製造方法及光線色彩調變方法
CN101261386A (zh) 液晶显示装置及发光单元
CN110568658A (zh) 一种量子点像素光致发光液晶显示模组及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23802453

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23802453

Country of ref document: EP

Kind code of ref document: A1