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WO2023216677A1 - Backlight module and preparation method therefor, and liquid crystal display panel - Google Patents

Backlight module and preparation method therefor, and liquid crystal display panel Download PDF

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Publication number
WO2023216677A1
WO2023216677A1 PCT/CN2023/077936 CN2023077936W WO2023216677A1 WO 2023216677 A1 WO2023216677 A1 WO 2023216677A1 CN 2023077936 W CN2023077936 W CN 2023077936W WO 2023216677 A1 WO2023216677 A1 WO 2023216677A1
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WIPO (PCT)
Prior art keywords
quantum dot
backlight module
fluorescence
quenched
led light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/077936
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French (fr)
Chinese (zh)
Inventor
冯亚军
许怀书
李健林
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Huizhou Vision New Technology Co Ltd
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Huizhou Vision New Technology Co Ltd
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Publication of WO2023216677A1 publication Critical patent/WO2023216677A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133614Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133615Edge-illuminating devices, i.e. illuminating from the side
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a backlight module, a preparation method thereof, and a liquid crystal display panel.
  • Liquid crystal display devices have many advantages such as thin body, power saving, and no radiation, and have been widely used.
  • Most of the liquid crystal display devices currently on the market are backlight-type liquid crystal display devices, which include a liquid crystal panel and a backlight module.
  • the working principle of the LCD panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates.
  • the liquid crystal molecules are controlled to change direction by whether they are energized or not, and the light from the backlight module is refracted. Come out to produce a picture. Since the LCD panel itself does not emit light, it requires the light source provided by the backlight module to display images normally. Therefore, the backlight module has become one of the key components of the LCD device.
  • Backlight modules are divided into two types: side-type backlight modules and direct-type backlight modules according to the different incident positions of the light sources.
  • the edge-type backlight module installs an LED (LightEmitting Diode) light bar on the edge of the back panel behind the LCD panel.
  • the light emitted by the LED light bar enters the light from the side of the light guide plate (LGP, Light Guide Plate).
  • the surface enters the light guide plate, and after reflection and diffusion, it is emitted from the light exit surface of the light guide plate, and then passes through the optical film group to form a surface light source and provides it to the LCD panel;
  • the direct backlight module sets the LED light source behind the LCD panel to directly form a surface light source.
  • the light source is provided to the LCD panel.
  • a direct-lit backlight module a diffusion plate is required to diffuse light and support the optical film; the light emitted by the light source is effectively diffused through the diffusion plate, which can achieve better optical effects.
  • Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel, aiming to improve the problem of poor display effects of existing backlight modules.
  • an embodiment of the present disclosure provides a backlight module, including: a quantum dot element and an LED light source disposed on one side of the quantum dot element; wherein the material of the quantum dot element includes quantum dots quenched by fluorescence. Point materials.
  • the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 to 520 nm.
  • the quantum dot element is a quantum dot film, a quantum dot diffusion plate or a quantum dot coating.
  • the backlight module is a direct backlight module, and the LED light sources are distributed in an array; wherein, the quantum dot elements are quantum dot diffusion plates, and the light output between the quantum dot diffusion plates and the LED light sources is Face to face.
  • the backlight module is a direct-type backlight module, and the LED light sources are distributed in an array.
  • the backlight module also includes a diffusion plate, and the diffusion plate is opposite to the light exit surface of the LED light source; wherein,
  • the quantum dot element is a quantum dot film or a quantum dot coating, and the quantum dot film or quantum dot coating is provided on a side of the diffusion plate away from the LED light source.
  • the backlight module is an edge-type backlight module, and the backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED light bar provided on the end surface of the light guide plate, so The LED light source is provided on the LED light bar; wherein the quantum dot element is a quantum dot film or a quantum dot coating.
  • the quantum dot film includes: a quantum dot glue layer and a PET layer coated on the upper and lower surfaces of the quantum dot glue layer; the material of the quantum dot glue layer includes: the fluorescence quenched quantum dot material and colloid.
  • the thickness of the quantum dot glue layer is 40 ⁇ 100 ⁇ m
  • the thickness of the PET layer is 60 ⁇ 120 ⁇ m
  • the total thickness of the quantum dot film is 180 ⁇ 320 ⁇ m.
  • the material of the quantum dot diffusion plate includes: the fluorescence-quenched quantum dot material and light-transmitting plastic; the light-transmitting plastic includes at least one of PS, PC or PMMA.
  • the quantum dot diffusion plate is a single layer, and the material of the quantum dot diffusion plate is uniformly mixed quantum dot material that is quenched by fluorescence and light-transmitting plastic.
  • the quantum dot diffusion plate is multi-layered, and the structure of the quantum dot diffusion plate is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle.
  • the quantum dot coating includes: the fluorescence quenched quantum dot material and colloid.
  • the LED light source includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from ⁇ -SIAION and/or nitride fluorescence pink.
  • the emission wavelength of the green phosphor is 490 ⁇ 600nm.
  • the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from at least one of Fe 3+ , Co 2+ , Ag + , o-nitrophenol, and chlorogenic acid. kind.
  • the quantum dots are selected from at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.
  • embodiments of the present disclosure also provide a method for preparing a backlight module, including the steps of: providing a quantum dot material quenched by fluorescence; making the quantum dot material quenched by fluorescence into a quantum dot element; and An LED light source is prepared on one side of the quantum dot element.
  • said providing a quantum dot material that is quenched by fluorescence includes the steps of: chemically synthesizing quantum dots; using solvents and antisolvents to centrifuge and purify the synthesized quantum dot colloid to remove excess long-chain ligands;
  • the quantum dot colloid purified by centrifugation is dispersed in an organic solvent to obtain a quantum dot solution; the concentration of the quantum dot solution is adjusted to about 10 mg/mL;
  • the quantum dot material is dispersed in the solvent; surfactant is added to prevent a large amount of aggregation when the fluorescence quenched quantum dot material is prepared into powder, and to ensure that the quantum dot powder is evenly dispersed when mixed with the substrate.
  • an embodiment of the present disclosure also provides a liquid crystal display panel, including the backlight module described in the first aspect.
  • an embodiment of the present disclosure also provides a liquid crystal display panel, including a backlight module prepared by the preparation method described in the second aspect.
  • the backlight module uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source, taking advantage of the characteristics of the fluorescence quenched quantum dots to absorb light but not emit light, as well as the adjustable absorption band. , absorbing the light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have high stability, low reliability process requirements and low cost The advantages.
  • FIG. 1 is a schematic cross-sectional structural diagram of a backlight module provided by an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional structural diagram of a backlight module provided by another embodiment of the present disclosure.
  • FIG. 3 is a schematic cross-sectional structural diagram of a backlight module provided by yet another embodiment of the present disclosure.
  • Figure 4 is a schematic diagram of the LED backlight spectrum and the RGB (red, green and blue) three color transmission bands of the LCD screen in an embodiment of the present disclosure.
  • Figure 5 is a schematic cross-sectional structural diagram of a quantum dot film provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic flowchart of a method for manufacturing a backlight module according to an embodiment of the present disclosure.
  • 11-LED light source 12-Quantum dot diffusion plate; 13-Lower brightness enhancement sheet: 14-Composite film; 15-Diffusion plate; 16-Quantum dot film; 161-PET layer; 162-Quantum dot adhesive layer; 17-Quantum dots Coating; 10-backlight module; 20-LCD; 100-LCD panel.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features.
  • features defined as “first” and “second” may explicitly or implicitly include one or more of the described features.
  • “plurality” means two or more than two, unless otherwise expressly and specifically limited.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • the word "exemplary” is used to mean “serving as an example, illustration, or illustration.” Any embodiment described as “exemplary” in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments.
  • the following description is presented to enable any person skilled in the art to make and use the present disclosure. In the following description, details are set forth for the purpose of explanation. It will be understood that one of ordinary skill in the art will recognize that the present disclosure may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail to avoid obscuring the disclosure with unnecessary detail. Thus, the present disclosure is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the disclosed principles and features.
  • Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel. Each is explained in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments. In addition, in the description of the present disclosure, the term “including” means “including but not limited to.” Various embodiments of the present disclosure may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a hard limit to the scope of the present disclosure; therefore, the described range should be considered The description has specifically disclosed all possible subranges as well as the single numerical values within that range. Whenever a numerical range is stated herein, it is intended to include any cited number (fractional or whole) within the indicated range.
  • the traditional LED light source is generally a blue light chip plus red phosphor and green phosphor.
  • the half-peak width of the emission spectrum of green phosphor and red phosphor is wider, which will cause red-green and blue-green crosstalk. It seriously affects the color gamut, thereby affecting the display effect.
  • Luminescent quantum dot materials can achieve a higher color gamut and can be used in quantum dot backlight modules.
  • the structure of the quantum dot backlight module is mainly quantum dot film or quantum dot diffusion plate plus blue LED.
  • the cost of quantum dot film is high, the reliability process requirements of quantum dot diffusion plate are high, and the luminescent quantum dot material will also change over time. The luminous efficiency will gradually decrease over time. Once the luminescent quantum dot material fails, the entire LCD panel will not be able to display images normally.
  • An embodiment of the present disclosure provides a backlight module 10 including: a quantum dot element and an LED light source 11 disposed on one side of the quantum dot element; wherein, the quantum dot element
  • the material of the dot element includes quantum dot material that is quenched by fluorescence.
  • the backlight module 10 uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source 11, taking advantage of the characteristics of fluorescence quenched quantum dots to absorb light but not emit light, and the adjustable absorption band. characteristics, absorbing light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, because the light-absorbing performance of quantum dots has a longer life than the luminescent performance, compared with luminescent quantum dot materials, fluorescent Quenched quantum dot materials have the advantages of high stability, low reliability process requirements and low cost.
  • the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 ⁇ 520nm, such as 480 ⁇ 485nm, 480 ⁇ 490nm, 480 ⁇ 495nm, 480 ⁇ 500nm, 480 ⁇ 505nm, 480 ⁇ 510nm, 480 ⁇ 515nm, 480 ⁇ 520nm, etc.
  • the color gamut of the existing LED light source 11 is mainly affected by the blue-green crosstalk band, and the blue-green crosstalk band range is 480 ⁇ 520nm, in order to obtain a better effect of improving the color gamut.
  • the embodiments of the present disclosure use fluorescence
  • the quenched quantum dot material absorbs the blue-green crosstalk light and can also relatively reduce the intensity of blue light to achieve the purpose of eye protection.
  • quantum dots of the same material have different band gaps with different sizes. Fluorescence quenching is to reduce the fluorescence efficiency of the quantum dot material and maintain the light absorption performance. Changing the absorption band can be achieved by methods known in the art, such as by adjusting The size of the quantum dot material is achieved, and the specific size is not limited here.
  • the backlight module 10 may be a direct-type backlight module or an edge-type backlight module.
  • the quantum dot element may be a quantum dot film 16, a quantum dot diffusion plate 12 or a quantum dot coating 17.
  • the quantum dot element may be a quantum dot film 16, a quantum dot diffusion plate 12 or a quantum dot coating 17.
  • the backlight module 10 is a direct backlight module, and the LED light sources 11 are distributed in an array.
  • the quantum dot element is a quantum dot diffusion plate 12 , and the quantum dot diffusion plate 12 is opposite to the light emitting surface of the LED light source 11 .
  • the backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .
  • the backlight module 10 is a direct-type backlight module, and the LED light sources 11 are distributed in an array.
  • the backlight module 10 also includes a diffusion plate 15.
  • the diffusion plate 15 is opposite to the light-emitting surface of the LED light source 11; wherein, the quantum dot element is a quantum dot film 16 or a quantum dot coating 17, and the quantum dot film 16 or the quantum dot coating 17 is disposed away from the diffusion plate.
  • the backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .
  • the backlight module is an edge-type backlight module (not shown).
  • the backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED provided on the end surface of the light guide plate.
  • a light bar, the LED light source is provided on the LED light bar;
  • the quantum dot element is a quantum dot film or a quantum dot coating.
  • the quantum dot film 16 includes a quantum dot adhesive layer 162 and a PET (polyethylene terephthalate) layer 161 coated on the upper and lower surfaces of the quantum dot adhesive layer,
  • the material of the quantum dot glue layer 162 includes: quantum dot material and colloid that are quenched by fluorescence. Compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have a higher lifespan. Therefore, the quantum dot film 16 in the embodiment of the present disclosure does not need to use a barrier film to improve the reliability of the film, that is, a PET layer. Silicon oxide plating is not required. Therefore, when the quantum dot element is the quantum dot film 16, the backlight module 10 provided by the embodiment of the present disclosure also has the advantage of low cost.
  • the thickness of the quantum dot glue layer 162 is 40 ⁇ 100 ⁇ m
  • the thickness of the PET layer is 60 ⁇ 120 ⁇ m
  • the total thickness of the quantum dot film 16 is 180 ⁇ 320 ⁇ m. Within this thickness range, the quantum dot film 16 has a better effect of improving the color gamut.
  • the material of the quantum dot diffusion plate 12 includes but is not limited to: quantum dot materials that are quenched by fluorescence and light-transmitting plastics, and the light-transmitting plastics include at least one of PS, PC or PMMA.
  • the quantum dot diffusion plate 12 can be a single layer or multiple layers, such as three layers.
  • the material of the quantum dot diffusion plate 12 It is a uniform mixture of fluorescence-quenched quantum dot materials and light-transmitting plastics.
  • the structure of the quantum dot diffusion plate 12 is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle.
  • the thickness of the upper and lower layers is 200 ⁇ 500 ⁇ m, and the total thickness is 1.5 ⁇ 3.0 mm. Within this thickness range, the quantum dot diffusion plate 12 has a better effect of improving the color gamut.
  • the quantum dot coating 17 includes, but is not limited to: fluorescence quenched quantum dot materials and colloids.
  • the colloid is acrylic resin.
  • the LED light source 11 includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from ⁇ -SIAION and/or Nitride phosphor.
  • the phosphors of the LED light source 11 are selected from green phosphors and red YAGA powders, compared with other phosphors, the half-peak width of the emission spectrum of these phosphors is wider. Therefore, when selecting these phosphors, the use of The fluorescence quenched quantum dot material absorbs part of the crosstalk band, narrows the half-peak width, and improves the color gamut and display effect even more significantly.
  • the red phosphor is a new red powder, matching the fluorescence quenched quantum dot material with the new red powder can achieve the same display effect of improved color gamut as the new red powder with a low-concentration luminescent quantum dot material diffusion plate.
  • the emission wavelength of the green phosphor is 490 ⁇ 600nm, and in particular, the main emission peak is 529nm. After adjusting the green phosphor emission wavelength, the emission color gamut can be greater than or equal to 93%. It should be noted that the emission wavelength can be adjusted by methods known in the art, such as adjusting the element ratio of the phosphor, which is not specifically limited here.
  • the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from but not limited to small molecules or metal ions, such as Fe 3+ , Co 2+ , Ag + , At least one of o-nitrophenol and chlorogenic acid.
  • the quantum dots in the fluorescence quenched quantum dot material are selected from, but are not limited to, at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.
  • An embodiment of the present disclosure also provides a method for preparing a backlight module, as shown in Figure 6, including the steps:
  • step S10 providing the quantum dot material quenched by fluorescence includes the steps:
  • quantum dots such as CdSe, CdTe, InP, silicon quantum dots, and graphene quantum dots.
  • the organic solvent can be selected from at least one of chloroform, toluene, cyclohexane, n-octane and carbon tetrachloride.
  • step S20 making the fluorescence quenched quantum dot material into a quantum dot element includes the step of: making the fluorescence quenched quantum dot material into a quantum dot element, and the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot element can specifically be made into a quantum dot.
  • the quantum dot diffusion plate, quantum dot film or quantum dot coating can be prepared using methods known in the art.
  • the quantum dot film can use a coating machine to combine a quantum dot solution with acrylic acid.
  • the system is prepared by mixing glue.
  • the mass ratio of quantum dot solution to glue is (1 ⁇ 2):20, for example: 1:20, 1.1:20, 1.2:20, 1.3:20, 1.4:20, 1.5:20, 1.6:20, 1.7:20, 1.8:20, 1.9:20, 2:20, etc.
  • the mass concentration of the quantum dot solution is 5% to 10%, such as 5%, 6%, 7%, 8%, 9%, 10%, etc. Within this density range, the color gamut improvement effect is better.
  • the present disclosure also provides a liquid crystal display panel, including the backlight module provided in any of the above embodiments.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes: an LED light source 11, a quantum dot diffusion plate 12, a lower brightness enhancement sheet 13, and a composite film 14 stacked in sequence from bottom to top.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.
  • the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 .
  • the backlight module 10 includes stacked from bottom to top: LED light source 11, diffusion plate 15, quantum dot coating 17, lower brightness enhancement sheet 13, and composite film 14.
  • the LCD 20 includes an array substrate and a counter substrate (not shown), which are opposed to each other to form a liquid crystal cell, and the liquid crystal cell is filled with liquid crystal material.
  • the opposite substrate is, for example, a color filter substrate.
  • the pixel electrode of each sub-pixel unit of the array substrate is used to apply an electric field to control the degree of rotation of the liquid crystal material to perform display operations.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes an LED light source, a quantum dot diffusion plate, a lower brightness enhancement sheet, and a composite film stacked in sequence from bottom to top.
  • the red light of the backlight uses new red powder
  • the green light uses 529nm green phosphor.
  • the quantum dot element is a diffusion plate made of CdSe system quantum dot material that has been treated with a quencher for fluorescence quenching.
  • the preparation method includes: mixing the quantum dot material solution and PS particles evenly and using an extruder to co-extrude the upper and lower layers.
  • the first layer is PS
  • the middle layer is a mixed layer of PS and quantum dot material. It can also be a single-layer basis.
  • This embodiment is a three-layer extrusion. Parameters: The total thickness of the upper and lower layers of the three layers is 400 ⁇ m, the middle layer is 700 ⁇ m, and the total thickness is 1.5mm.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot film, lower brightness enhancement sheet, composite membrane.
  • the quantum dot element is a quantum dot film prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher.
  • the quantum dot film has three layers, including a quantum dot glue layer and PET coated on the upper and lower surfaces of the quantum dot glue layer.
  • the preparation method includes: using a film coating machine to mix a quantum dot solution and an acrylic system glue to prepare a quantum dot glue layer, where the mass ratio of the quantum dot solution to the glue is 1:20, and the mass concentration of the quantum dot solution is 7%.
  • the thickness of the glue layer is 60 ⁇ m
  • the thickness of PET is 60 ⁇ m
  • the total thickness of the film is 180 ⁇ m.
  • this embodiment provides a method for preparing a backlight module and a quantum dot element.
  • the backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot coating, lower brightness enhancement sheet, Composite membrane.
  • the quantum dot element is a quantum dot coating prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher.
  • the glue ratio and quantum dot concentration of the coating are the same as those in Example 2.
  • the basic structure of the comparative example is the same as that of Example 1. The only difference is that there is no quantum dot material that has been fluorescence quenched by the quencher in the diffusion plate.
  • the cross-screen color gamut of Examples 1 to 3 is higher than that of the comparative example.
  • the cross-screen color gamut of Example 1 is 93.8%
  • the cross-screen color gamut of the comparative example is 93.8%. is 92%. It shows that using quantum dot components containing fluorescence-quenched quantum dot materials with LED light sources can improve the color gamut and make the display better. This is due to the fact that fluorescence quenched quantum dots can absorb light in the crosstalk band.

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Abstract

A backlight module and a preparation method therefor, and a liquid crystal display panel. According to the backlight module (10), a quantum dot element containing a fluorescence-quenched quantum dot material is matched with an LED light source (11) for use, and the characteristic that the fluorescence-quenched quantum dot absorbs light and does not emit light and the characteristic that the absorption band is adjustable are utilized to absorb light in a crosstalk waveband, such that the color gamut is improved, and the display effect is better. In addition, compared with a light-emitting quantum dot material, the fluorescence-quenched quantum dot material has the advantages of high stability, low reliability process requirements and low cost.

Description

背光模组及其制备方法、液晶显示面板Backlight module and preparation method thereof, liquid crystal display panel

本申请要求于2022年5月13日提交中国国家知识产权局、申请号为202210522512.9、发明名称为“背光模组及其制备方法、液晶显示面板”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application requires the priority of the Chinese patent application submitted to the State Intellectual Property Office of China on May 13, 2022, with the application number 202210522512.9 and the invention name "Backlight Module and Preparation Method, Liquid Crystal Display Panel", and its entire content has been approved This reference is incorporated into this application.

技术领域Technical field

本公开涉及显示技术领域,具体涉及一种背光模组及其制备方法、液晶显示面板。The present disclosure relates to the field of display technology, and in particular to a backlight module, a preparation method thereof, and a liquid crystal display panel.

背景技术Background technique

液晶显示装置(LCD,Liquid Crystal Display)具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。现有市场上的液晶显示装置大部分为背光型液晶显示装置,其包括液晶面板及背光模组(backlight module)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子,两片玻璃基板中间有许多垂直和水平的细小电线,通过通电与否来控制液晶分子改变方向,将背光模组的光线折射出来产生画面。由于液晶面板本身不发光,需要借由背光模组提供的光源来正常显示影像,因此,背光模组成为液晶显示装置的关键组件之一。Liquid crystal display devices (LCDs, Liquid Crystal Display) have many advantages such as thin body, power saving, and no radiation, and have been widely used. Most of the liquid crystal display devices currently on the market are backlight-type liquid crystal display devices, which include a liquid crystal panel and a backlight module. The working principle of the LCD panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates. The liquid crystal molecules are controlled to change direction by whether they are energized or not, and the light from the backlight module is refracted. Come out to produce a picture. Since the LCD panel itself does not emit light, it requires the light source provided by the backlight module to display images normally. Therefore, the backlight module has become one of the key components of the LCD device.

背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。侧入式背光模组是将LED (LightEmitting Diode,发光二极管)灯条设于液晶面板侧后方的背板边缘,LED灯条发出的光线从导光板(LGP,Light Guide Plate)一侧的入光面进入导光板,经反射和扩散后从导光板出光面射出,再经由光学膜片组以形成面光源提供给液晶面板;直下式背光模组是将LED光源设置在液晶面板后方,直接形成面光源提供给液晶面板。在直下式背光模组中,需要采用扩散板起到扩散光线和支撑光学膜片的作用;光源发出的光线通过扩散板进行光有效扩散,可实现较佳的光学效果。Backlight modules are divided into two types: side-type backlight modules and direct-type backlight modules according to the different incident positions of the light sources. The edge-type backlight module installs an LED (LightEmitting Diode) light bar on the edge of the back panel behind the LCD panel. The light emitted by the LED light bar enters the light from the side of the light guide plate (LGP, Light Guide Plate). The surface enters the light guide plate, and after reflection and diffusion, it is emitted from the light exit surface of the light guide plate, and then passes through the optical film group to form a surface light source and provides it to the LCD panel; the direct backlight module sets the LED light source behind the LCD panel to directly form a surface light source. The light source is provided to the LCD panel. In a direct-lit backlight module, a diffusion plate is required to diffuse light and support the optical film; the light emitted by the light source is effectively diffused through the diffusion plate, which can achieve better optical effects.

技术问题technical problem

背光模组在研发过程中存在着很多问题,例如传统的LED光源的色域有待提高,影响了显示效果。There are many problems in the development process of backlight modules. For example, the color gamut of traditional LED light sources needs to be improved, which affects the display effect.

技术解决方案Technical solutions

本公开实施例提供一种背光模组及其制备方法、液晶显示面板,旨在改善现有的背光模组的显示效果不佳的问题。Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel, aiming to improve the problem of poor display effects of existing backlight modules.

第一方面,本公开实施例提供一种背光模组,包括:量子点元件以及设于所述量子点元件一侧的LED光源;其中,所述量子点元件的材料包括被荧光猝灭的量子点材料。In a first aspect, an embodiment of the present disclosure provides a backlight module, including: a quantum dot element and an LED light source disposed on one side of the quantum dot element; wherein the material of the quantum dot element includes quantum dots quenched by fluorescence. Point materials.

可选的,所述被荧光猝灭的量子点材料的特征吸收峰为480~520nm。Optionally, the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 to 520 nm.

可选的,所述量子点元件为量子点膜、量子点扩散板或量子点涂层。Optionally, the quantum dot element is a quantum dot film, a quantum dot diffusion plate or a quantum dot coating.

可选的,所述背光模组为直下式背光模组,所述LED光源呈阵列分布;其中,所述量子点元件为量子点扩散板,所述量子点扩散板与所述LED光源的出光面相对。Optionally, the backlight module is a direct backlight module, and the LED light sources are distributed in an array; wherein, the quantum dot elements are quantum dot diffusion plates, and the light output between the quantum dot diffusion plates and the LED light sources is Face to face.

可选的,所述背光模组为直下式背光模组,所述LED光源呈阵列分布,所述背光模组还包括扩散板,所述扩散板与所述LED光源的出光面相对;其中,所述量子点元件为量子点膜或量子点涂层,所述量子点膜或量子点涂层设于所述扩散板远离所述LED光源的一侧。Optionally, the backlight module is a direct-type backlight module, and the LED light sources are distributed in an array. The backlight module also includes a diffusion plate, and the diffusion plate is opposite to the light exit surface of the LED light source; wherein, The quantum dot element is a quantum dot film or a quantum dot coating, and the quantum dot film or quantum dot coating is provided on a side of the diffusion plate away from the LED light source.

可选的,所述背光模组为侧入式背光模组,所述背光模组还包括设于所述量子点元件一侧的导光板以及设于所述导光板端面的LED灯条,所述LED光源设于所述LED灯条上;其中,所述量子点元件为量子点膜或量子点涂层。Optionally, the backlight module is an edge-type backlight module, and the backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED light bar provided on the end surface of the light guide plate, so The LED light source is provided on the LED light bar; wherein the quantum dot element is a quantum dot film or a quantum dot coating.

可选的,所述量子点膜包括:量子点胶层以及涂布于量子点胶层上下表面的PET层;所述量子点胶层的材料包括:所述被荧光猝灭的量子点材料和胶体。Optionally, the quantum dot film includes: a quantum dot glue layer and a PET layer coated on the upper and lower surfaces of the quantum dot glue layer; the material of the quantum dot glue layer includes: the fluorescence quenched quantum dot material and colloid.

可选的,所述量子点胶层的厚度为40~100μm,所述PET层的厚度为60~120μm,所述量子点膜的总厚度为180~320μm。Optionally, the thickness of the quantum dot glue layer is 40~100 μm, the thickness of the PET layer is 60~120 μm, and the total thickness of the quantum dot film is 180~320 μm.

可选的,所述量子点扩散板的材料包括:所述被荧光猝灭的量子点材料和透光塑料;所述透光塑料包括PS、PC或PMMA中的至少一种。Optionally, the material of the quantum dot diffusion plate includes: the fluorescence-quenched quantum dot material and light-transmitting plastic; the light-transmitting plastic includes at least one of PS, PC or PMMA.

可选的,所述量子点扩散板为单层,所述量子点扩散板的材料为均匀混合的被荧光猝灭的量子点材料和透光塑料。Optionally, the quantum dot diffusion plate is a single layer, and the material of the quantum dot diffusion plate is uniformly mixed quantum dot material that is quenched by fluorescence and light-transmitting plastic.

可选的,所述量子点扩散板为多层,所述量子点扩散板的结构分别为上下两层的透光塑料层以及中间的量子点材料溶液制成的膜层。Optionally, the quantum dot diffusion plate is multi-layered, and the structure of the quantum dot diffusion plate is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle.

可选的,所述量子点涂层包括:所述被荧光猝灭的量子点材料和胶体。Optionally, the quantum dot coating includes: the fluorescence quenched quantum dot material and colloid.

可选的,所述LED光源包括蓝光芯片、红色荧光粉和绿色荧光粉;所述红色荧光粉选自YAGA和/或新红粉,所述绿色荧光粉选自β-SIAION和/或氮化物荧光粉。Optionally, the LED light source includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from β-SIAION and/or nitride fluorescence pink.

可选的,所述绿色荧光粉的发射波长为490~600nm。Optionally, the emission wavelength of the green phosphor is 490~600nm.

可选的,所述被荧光猝灭的量子点材料经猝灭剂处理,所述猝灭剂选自Fe 3+、Co 2+、Ag +、邻硝基苯酚、绿原酸中的至少一种。 Optionally, the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from at least one of Fe 3+ , Co 2+ , Ag + , o-nitrophenol, and chlorogenic acid. kind.

可选的,所述量子点选自:CdSe、CdTe、InP、硅量子点或石墨烯量子点中的至少一种。Optionally, the quantum dots are selected from at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.

第二方面,本公开实施例还提供一种背光模组的制备方法,包括步骤:提供被荧光猝灭的量子点材料;将所述被荧光猝灭的量子点材料制成量子点元件;以及在所述量子点元件的一侧制备LED光源。In a second aspect, embodiments of the present disclosure also provide a method for preparing a backlight module, including the steps of: providing a quantum dot material quenched by fluorescence; making the quantum dot material quenched by fluorescence into a quantum dot element; and An LED light source is prepared on one side of the quantum dot element.

可选的,所述提供被荧光猝灭的量子点材料包括步骤:利用化学法合成量子点;利用溶剂、抗溶剂对合成的量子点胶体进行离心纯化,以去除多余的长链配体;将离心纯化好的量子点胶体分散在有机溶剂中而得到量子点溶液;将所述量子点溶液的浓度调整到约10mg/mL;Optionally, said providing a quantum dot material that is quenched by fluorescence includes the steps of: chemically synthesizing quantum dots; using solvents and antisolvents to centrifuge and purify the synthesized quantum dot colloid to remove excess long-chain ligands; The quantum dot colloid purified by centrifugation is dispersed in an organic solvent to obtain a quantum dot solution; the concentration of the quantum dot solution is adjusted to about 10 mg/mL;

在所述量子点溶液中加入可使所述量子点荧光猝灭的小分子或者金属离子;离心将所述量子点溶液中多余的离子或者小分子去除,再将离心纯化好且被荧光猝灭的量子点材料分散在溶剂中;加入表面活性剂防止将被荧光猝灭的量子点材料制备成粉末时产生大量聚集,保证量子点粉末在与基材混合时均匀分散。Add small molecules or metal ions that can quench the fluorescence of the quantum dots into the quantum dot solution; centrifuge to remove excess ions or small molecules in the quantum dot solution, and then purify them by centrifugation and quench the fluorescence. The quantum dot material is dispersed in the solvent; surfactant is added to prevent a large amount of aggregation when the fluorescence quenched quantum dot material is prepared into powder, and to ensure that the quantum dot powder is evenly dispersed when mixed with the substrate.

第三方面,本公开实施例还提供一种液晶显示面板,包括第一方面所述的背光模组。In a third aspect, an embodiment of the present disclosure also provides a liquid crystal display panel, including the backlight module described in the first aspect.

第四方面,本公开实施例还提供一种液晶显示面板,包括第二方面所述的制备方法制备得到的背光模组。In a fourth aspect, an embodiment of the present disclosure also provides a liquid crystal display panel, including a backlight module prepared by the preparation method described in the second aspect.

有益效果beneficial effects

本公开实施例提供的背光模组,通过将含有被荧光猝灭的量子点材料的量子点元件与LED光源搭配使用,利用荧光猝灭量子点吸光不发光的特性,以及吸收波段可调的特点,吸收掉串扰波段的光,从而提升色域,使显示效果更佳;此外,相较于发光量子点材料,被荧光猝灭的量子点材料具有稳定性高,可靠性工艺要求低且成本低的优点。The backlight module provided by the embodiment of the present disclosure uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source, taking advantage of the characteristics of the fluorescence quenched quantum dots to absorb light but not emit light, as well as the adjustable absorption band. , absorbing the light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have high stability, low reliability process requirements and low cost The advantages.

附图说明Description of the drawings

为了更清楚地说明本公开实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, other drawings can also be obtained based on these drawings without exerting creative efforts.

图1为本公开一个实施例提供的背光模组的截面结构示意图。FIG. 1 is a schematic cross-sectional structural diagram of a backlight module provided by an embodiment of the present disclosure.

图2为本公开另一个实施例提供的背光模组的截面结构示意图。FIG. 2 is a schematic cross-sectional structural diagram of a backlight module provided by another embodiment of the present disclosure.

图3为本公开又一个实施例提供的背光模组的截面结构示意图。FIG. 3 is a schematic cross-sectional structural diagram of a backlight module provided by yet another embodiment of the present disclosure.

图4为本公开实施例中LED背光源图谱与LCD屏RGB(红绿蓝)三色透过波段的示意图。Figure 4 is a schematic diagram of the LED backlight spectrum and the RGB (red, green and blue) three color transmission bands of the LCD screen in an embodiment of the present disclosure.

图5为本公开实施例提供的量子点膜的截面结构示意图。Figure 5 is a schematic cross-sectional structural diagram of a quantum dot film provided by an embodiment of the present disclosure.

图6为本公开实施例提供的背光模组的制备方法的流程示意图。FIG. 6 is a schematic flowchart of a method for manufacturing a backlight module according to an embodiment of the present disclosure.

附图标记:Reference signs:

11-LED光源;12-量子点扩散板;13-下增亮片:14-复合膜;15-扩散板;16-量子点膜;161-PET层;162-量子点胶层;17-量子点涂层;10-背光模组;20-LCD;100-液晶显示面板。11-LED light source; 12-Quantum dot diffusion plate; 13-Lower brightness enhancement sheet: 14-Composite film; 15-Diffusion plate; 16-Quantum dot film; 161-PET layer; 162-Quantum dot adhesive layer; 17-Quantum dots Coating; 10-backlight module; 20-LCD; 100-LCD panel.

本发明的实施方式Embodiments of the invention

下面将结合本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of this disclosure.

在本公开的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本公开和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本公开的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本公开的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " The directions or positional relationships indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are based on the directions shown in the accompanying drawings or positional relationships are only for the convenience of describing the present disclosure and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the present disclosure, "plurality" means two or more than two, unless otherwise expressly and specifically limited.

“A和/或B”,包括以下三种组合:仅A,仅B,及A和B的组合。"A and/or B" includes the following three combinations: A only, B only, and a combination of A and B.

本公开中“适用于”或“被配置为”的使用意味着开放和包容性的语言,其不排除适用于或被配置为执行额外任务或步骤的设备。另外,“基于”的使用意味着开放和包容性,因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。The use of "suitable for" or "configured to" in this disclosure means open and inclusive language that does not exclude devices that are suitable for or configured to perform additional tasks or steps. Additionally, the use of "based on" is meant to be open and inclusive in that a process, step, calculation or other action "based on" one or more stated conditions or values may in practice be based on additional conditions or beyond the stated values.

在本公开中,“示例性”一词用来表示“用作例子、例证或说明”。本公开中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本公开,给出了以下描述。在以下描述中,为了解释的目的而列出了细节。应当明白的是,本领域普通技术人员可以认识到,在不使用这些特定细节的情况下也可以实现本公开。在其它实例中,不会对公知的结构和过程进行详细阐述,以避免不必要的细节使本公开的描述变得晦涩。因此,本公开并非旨在限于所示的实施例,而是与符合本公开所公开的原理和特征的最广范围相一致。In this disclosure, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described as "exemplary" in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the present disclosure. In the following description, details are set forth for the purpose of explanation. It will be understood that one of ordinary skill in the art will recognize that the present disclosure may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail to avoid obscuring the disclosure with unnecessary detail. Thus, the present disclosure is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the disclosed principles and features.

本公开实施例提供一种背光模组及其制备方法、液晶显示面板。以下分别进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。另外,在本公开的描述中,术语“包括”是指“包括但不限于”。本公开的各种实施例可以以一个范围的型式存在;应当理解,以一范围型式的描述仅仅是因为方便及简洁,不应理解为对本公开范围的硬性限制;因此,应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。每当在本文中指出数值范围,是指包括所指范围内的任何引用的数字(分数或整数)。Embodiments of the present disclosure provide a backlight module, a preparation method thereof, and a liquid crystal display panel. Each is explained in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments. In addition, in the description of the present disclosure, the term "including" means "including but not limited to." Various embodiments of the present disclosure may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a hard limit to the scope of the present disclosure; therefore, the described range should be considered The description has specifically disclosed all possible subranges as well as the single numerical values within that range. Whenever a numerical range is stated herein, it is intended to include any cited number (fractional or whole) within the indicated range.

发明人发现,传统的LED光源一般是蓝光芯片加红色荧光粉和绿色荧光粉,其中绿色荧光粉和红色荧光粉的发射光谱的半峰宽较宽,会造成红绿以及蓝绿串扰的现象,严重的影响了色域,从而影响了显示效果。发光量子点材料能够得到较高的色域,可用于量子点背光模组中。量子点背光模组的结构主要为量子点膜或者量子点扩散板加蓝光LED,但是量子点膜成本高昂,量子点扩散板的可靠性工艺要求较高,且发光量子点材料还会随着时间的推移发光效率会逐渐降低,一旦发光量子点材料失效,则会导致整个液晶显示面板无法正常显示画面。The inventor found that the traditional LED light source is generally a blue light chip plus red phosphor and green phosphor. The half-peak width of the emission spectrum of green phosphor and red phosphor is wider, which will cause red-green and blue-green crosstalk. It seriously affects the color gamut, thereby affecting the display effect. Luminescent quantum dot materials can achieve a higher color gamut and can be used in quantum dot backlight modules. The structure of the quantum dot backlight module is mainly quantum dot film or quantum dot diffusion plate plus blue LED. However, the cost of quantum dot film is high, the reliability process requirements of quantum dot diffusion plate are high, and the luminescent quantum dot material will also change over time. The luminous efficiency will gradually decrease over time. Once the luminescent quantum dot material fails, the entire LCD panel will not be able to display images normally.

鉴于此,首先,请参阅图1至图3,本公开实施例提供一种背光模组10,包括:量子点元件以及设于所述量子点元件一侧的LED光源11;其中,所述量子点元件的材料包括被荧光猝灭的量子点材料。In view of this, first of all, please refer to FIGS. 1 to 3 . An embodiment of the present disclosure provides a backlight module 10 including: a quantum dot element and an LED light source 11 disposed on one side of the quantum dot element; wherein, the quantum dot element The material of the dot element includes quantum dot material that is quenched by fluorescence.

本公开实施例提供的背光模组10,通过将含有被荧光猝灭的量子点材料的量子点元件与LED光源11搭配使用,利用荧光猝灭量子点吸光不发光的特性,以及吸收波段可调的特点,吸收掉串扰波段的光,从而提升色域,使显示效果更佳;此外,因量子点的吸光性能寿命性比发光性能的寿命更长,因此相较于发光量子点材料,被荧光猝灭的量子点材料具有稳定性高,可靠性工艺要求低且成本低的优点。The backlight module 10 provided by the embodiment of the present disclosure uses a quantum dot element containing a fluorescence quenched quantum dot material in conjunction with an LED light source 11, taking advantage of the characteristics of fluorescence quenched quantum dots to absorb light but not emit light, and the adjustable absorption band. characteristics, absorbing light in the crosstalk band, thereby improving the color gamut and making the display better; in addition, because the light-absorbing performance of quantum dots has a longer life than the luminescent performance, compared with luminescent quantum dot materials, fluorescent Quenched quantum dot materials have the advantages of high stability, low reliability process requirements and low cost.

在一些实施例中,所述被荧光猝灭的量子点材料的特征吸收峰为480~520nm,例如480~485nm、480~490nm、480~495nm、480~500nm、480~505nm、480~510nm、480~515nm、480~520nm等。如图4所示,因现有的LED光源11的色域主要受到蓝绿串扰波段的影响,而蓝绿串扰波段范围为480~520nm,因此为了获得更好的提高色域的效果。将被荧光猝灭的量子点材料的特征吸收峰设置在480~520nm范围内可以改善蓝绿串扰的问题,更好的起到提升色域的效果;另一方面,本公开实施例通过利用荧光猝灭量子点材料吸收掉蓝绿串扰的光,还可以使蓝光的强度相对减少,达到护眼的目的。In some embodiments, the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480~520nm, such as 480~485nm, 480~490nm, 480~495nm, 480~500nm, 480~505nm, 480~510nm, 480~515nm, 480~520nm, etc. As shown in Figure 4, because the color gamut of the existing LED light source 11 is mainly affected by the blue-green crosstalk band, and the blue-green crosstalk band range is 480~520nm, in order to obtain a better effect of improving the color gamut. Setting the characteristic absorption peak of the fluorescence-quenched quantum dot material in the range of 480 to 520 nm can improve the problem of blue-green crosstalk and better improve the color gamut. On the other hand, the embodiments of the present disclosure use fluorescence The quenched quantum dot material absorbs the blue-green crosstalk light and can also relatively reduce the intensity of blue light to achieve the purpose of eye protection.

需要说明的是,同一种材料的量子点,尺寸不同带隙不同,荧光猝灭是降低量子点材料的荧光效率保持吸光性能,改变吸收波段可以通过本领域已知的方法来实现,例如通过调节量子点材料的尺寸来实现,具体此处不作限定。It should be noted that quantum dots of the same material have different band gaps with different sizes. Fluorescence quenching is to reduce the fluorescence efficiency of the quantum dot material and maintain the light absorption performance. Changing the absorption band can be achieved by methods known in the art, such as by adjusting The size of the quantum dot material is achieved, and the specific size is not limited here.

在一些实施例中,背光模组10可以为直下式背光模组或侧入式背光模组。所述量子点元件可以为量子点膜16、量子点扩散板12或量子点涂层17。例如:In some embodiments, the backlight module 10 may be a direct-type backlight module or an edge-type backlight module. The quantum dot element may be a quantum dot film 16, a quantum dot diffusion plate 12 or a quantum dot coating 17. For example:

示例的,如图1所示,所述背光模组10为直下式背光模组,所述LED光源11呈阵列分布。所述量子点元件为量子点扩散板12,所述量子点扩散板12与所述LED光源11的出光面相对。所述背光模组还包括量子点扩散板12上方的下增亮片13和复合膜14。For example, as shown in FIG. 1 , the backlight module 10 is a direct backlight module, and the LED light sources 11 are distributed in an array. The quantum dot element is a quantum dot diffusion plate 12 , and the quantum dot diffusion plate 12 is opposite to the light emitting surface of the LED light source 11 . The backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .

示例的,如图2和图3所示,所述背光模组10为直下式背光模组,所述LED光源11呈阵列分布,所述背光模组10还包括扩散板15,所述扩散板15与所述LED光源11的出光面相对;其中,所述量子点元件为量子点膜16或量子点涂层17,所述量子点膜16或量子点涂层17设于所述扩散板远离所述LED光源11的一侧。所述背光模组还包括量子点扩散板12上方的下增亮片13和复合膜14。For example, as shown in Figures 2 and 3, the backlight module 10 is a direct-type backlight module, and the LED light sources 11 are distributed in an array. The backlight module 10 also includes a diffusion plate 15. The diffusion plate 15 is opposite to the light-emitting surface of the LED light source 11; wherein, the quantum dot element is a quantum dot film 16 or a quantum dot coating 17, and the quantum dot film 16 or the quantum dot coating 17 is disposed away from the diffusion plate. One side of the LED light source 11. The backlight module also includes a lower brightness enhancement sheet 13 and a composite film 14 above the quantum dot diffusion plate 12 .

示例的,所述背光模组为侧入式背光模组(未图示),所述背光模组还包括设于所述量子点元件一侧的导光板以及设于所述导光板端面的LED灯条,所述LED光源设于所述LED灯条上;所述量子点元件为量子点膜或量子点涂层。For example, the backlight module is an edge-type backlight module (not shown). The backlight module further includes a light guide plate provided on one side of the quantum dot element and an LED provided on the end surface of the light guide plate. A light bar, the LED light source is provided on the LED light bar; the quantum dot element is a quantum dot film or a quantum dot coating.

在一些实施例中,如图5所示,所述量子点膜16包括量子点胶层162以及涂布于量子点胶层上下表面的PET(聚对苯二甲酸乙二醇酯)层161,所述量子点胶层162的材料包括:被荧光猝灭的量子点材料和胶体。相较于发光量子点材料,被荧光猝灭的量子点材料的寿命更高,因此本公开实施例中的量子点膜16可以不需要用到阻隔膜来提高膜片的可靠性,即PET层可以不需要镀氧化硅。因此当所述量子点元件为量子点膜16时,本公开实施例提供的背光模组10还具有成本低的优点。In some embodiments, as shown in Figure 5, the quantum dot film 16 includes a quantum dot adhesive layer 162 and a PET (polyethylene terephthalate) layer 161 coated on the upper and lower surfaces of the quantum dot adhesive layer, The material of the quantum dot glue layer 162 includes: quantum dot material and colloid that are quenched by fluorescence. Compared with luminescent quantum dot materials, quantum dot materials quenched by fluorescence have a higher lifespan. Therefore, the quantum dot film 16 in the embodiment of the present disclosure does not need to use a barrier film to improve the reliability of the film, that is, a PET layer. Silicon oxide plating is not required. Therefore, when the quantum dot element is the quantum dot film 16, the backlight module 10 provided by the embodiment of the present disclosure also has the advantage of low cost.

在一些实施例中,量子点胶层162的厚度为40~100μm,PET层的厚度为60~120μm,量子点膜16的总厚度为180~320μm。在该厚度范围内,量子点膜16提升色域的效果更好。In some embodiments, the thickness of the quantum dot glue layer 162 is 40~100 μm, the thickness of the PET layer is 60~120 μm, and the total thickness of the quantum dot film 16 is 180~320 μm. Within this thickness range, the quantum dot film 16 has a better effect of improving the color gamut.

在一些实施例中,所述量子点扩散板12的材料包括但不限于:被荧光猝灭的量子点材料和透光塑料,所述透光塑料包括PS、PC或PMMA中的至少一种。In some embodiments, the material of the quantum dot diffusion plate 12 includes but is not limited to: quantum dot materials that are quenched by fluorescence and light-transmitting plastics, and the light-transmitting plastics include at least one of PS, PC or PMMA.

在一些实施例中,所述量子点扩散板12可以为单层,也可以为多层,例如三层,当所述量子点扩散板12为单层时,所述量子点扩散板12的材料为均匀混合的被荧光猝灭的量子点材料和透光塑料。当所述量子点扩散板12为多层时,所述量子点扩散板12的结构分别为上下两层的透光塑料层以及中间的量子点材料溶液制成的膜层。在一些具体实施例中,上下层的厚度为200~500μm,总厚度为1.5~3.0mm。在该厚度范围内,量子点扩散板12提升色域的效果更好。In some embodiments, the quantum dot diffusion plate 12 can be a single layer or multiple layers, such as three layers. When the quantum dot diffusion plate 12 is a single layer, the material of the quantum dot diffusion plate 12 It is a uniform mixture of fluorescence-quenched quantum dot materials and light-transmitting plastics. When the quantum dot diffusion plate 12 is multi-layered, the structure of the quantum dot diffusion plate 12 is an upper and lower light-transmitting plastic layer and a film layer made of a quantum dot material solution in the middle. In some specific embodiments, the thickness of the upper and lower layers is 200~500 μm, and the total thickness is 1.5~3.0 mm. Within this thickness range, the quantum dot diffusion plate 12 has a better effect of improving the color gamut.

在一些实施例中,所述量子点涂层17包括但不限于:被荧光猝灭的量子点材料和胶体。在一些具体实施例中,所述胶体为丙烯酸树脂。In some embodiments, the quantum dot coating 17 includes, but is not limited to: fluorescence quenched quantum dot materials and colloids. In some specific embodiments, the colloid is acrylic resin.

在一些实施例中,所述LED光源11包括蓝光芯片、红色荧光粉和绿色荧光粉;所述红色荧光粉选自YAGA和/或新红粉,所述绿色荧光粉选自β-SIAION和/或氮化物荧光粉。当所述LED光源11的荧光粉选自绿色荧光粉和红色的YAGA粉时,相较于其他荧光粉,这些荧光粉的发射光谱半峰宽更宽,因此当选择这些荧光粉时,利用被荧光猝灭的量子点材料吸收掉部分串扰的波段,半峰宽变窄,色域和显示效果改善的更加的显著。当所述红色荧光粉为新红粉时,将被荧光猝灭的量子点材料与新红粉搭配,可实现与新红粉搭配低浓度发光量子点材料扩散板相同的色域提高的显示效果。In some embodiments, the LED light source 11 includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from β-SIAION and/or Nitride phosphor. When the phosphors of the LED light source 11 are selected from green phosphors and red YAGA powders, compared with other phosphors, the half-peak width of the emission spectrum of these phosphors is wider. Therefore, when selecting these phosphors, the use of The fluorescence quenched quantum dot material absorbs part of the crosstalk band, narrows the half-peak width, and improves the color gamut and display effect even more significantly. When the red phosphor is a new red powder, matching the fluorescence quenched quantum dot material with the new red powder can achieve the same display effect of improved color gamut as the new red powder with a low-concentration luminescent quantum dot material diffusion plate.

在一些实施例中,为了避免绿光被吸收掉一部分半峰宽变窄之后波长的红移的问题。所述绿色荧光粉的发射波长为490~600nm,特别的,发射主峰为529nm。在调整绿色荧光粉发射波长之后,发射色域可大于或等于93%。需要说明的是,发射波长的调整可以采用本领域已知的方法,例如调整荧光粉的元素比例来实现,具体此处不作限定。In some embodiments, in order to avoid the problem of red shift of the wavelength after a part of the half-peak width of green light is absorbed and narrowed. The emission wavelength of the green phosphor is 490~600nm, and in particular, the main emission peak is 529nm. After adjusting the green phosphor emission wavelength, the emission color gamut can be greater than or equal to 93%. It should be noted that the emission wavelength can be adjusted by methods known in the art, such as adjusting the element ratio of the phosphor, which is not specifically limited here.

在一些实施例中,所述被荧光猝灭的量子点材料经猝灭剂处理,所述猝灭剂选自但不限于小分子或者金属离子,例如Fe 3+、Co 2+、Ag +、邻硝基苯酚、绿原酸中的至少一种。所述被荧光猝灭的量子点材料中的量子点选自但不限于:CdSe、CdTe、InP、硅量子点或石墨烯量子点中的至少一种。 In some embodiments, the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from but not limited to small molecules or metal ions, such as Fe 3+ , Co 2+ , Ag + , At least one of o-nitrophenol and chlorogenic acid. The quantum dots in the fluorescence quenched quantum dot material are selected from, but are not limited to, at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots.

本公开实施例还提供一种背光模组的制备方法,如图6所示,包括步骤:An embodiment of the present disclosure also provides a method for preparing a backlight module, as shown in Figure 6, including the steps:

S10. 提供被荧光猝灭的量子点材料;S10. Provide quantum dot materials that are quenched by fluorescence;

S20. 将所述被荧光猝灭的量子点材料制成量子点元件;以及S20. Make the fluorescence-quenched quantum dot material into a quantum dot element; and

S30. 在所述量子点元件的一侧制备LED光源。S30. Prepare an LED light source on one side of the quantum dot component.

所述步骤S10中,提供被荧光猝灭的量子点材料包括步骤:In the step S10, providing the quantum dot material quenched by fluorescence includes the steps:

(1)利用化学法合成量子点,例如CdSe、CdTe、InP、硅量子点和石墨烯量子点等。(1) Use chemical methods to synthesize quantum dots, such as CdSe, CdTe, InP, silicon quantum dots, and graphene quantum dots.

(2)对合成的量子点胶体利用溶剂、抗溶剂进行离心纯化去除多余的长链配体,离心3~5次,尽可能多的去除多余的长链配体。(2) Use solvents and antisolvents to centrifuge the synthesized quantum dot colloid to remove excess long-chain ligands. Centrifuge 3 to 5 times to remove as much excess long-chain ligands as possible.

(3)将离心纯化好的量子点胶体分散在有机溶剂里面得到量子点溶液,所述有机溶剂可选自氯仿、甲苯、环己烷、正辛烷和四氯化碳中的至少一种。(3) Disperse the centrifugally purified quantum dot colloid in an organic solvent to obtain a quantum dot solution. The organic solvent can be selected from at least one of chloroform, toluene, cyclohexane, n-octane and carbon tetrachloride.

(4)将量子点溶液的浓度调整到约10mg/mL(毫克每毫升),保证后续的表面处理更加完善。(4) Adjust the concentration of the quantum dot solution to approximately 10 mg/mL (milligrams per milliliter) to ensure that subsequent surface treatment is more complete.

(5)加入可使量子点荧光猝灭的小分子或者金属离子,例如Fe 3+、Co 2+、Ag +、邻硝基苯酚、绿原酸中的至少一种。 (5) Add small molecules or metal ions that can quench the fluorescence of quantum dots, such as at least one of Fe 3+ , Co 2+ , Ag + , o-nitrophenol, and chlorogenic acid.

(6)离心将溶液中多余的离子或者小分子去除掉,再将离心纯化好的被荧光猝灭的量子点材料分散在溶剂中。(6) Centrifuge to remove excess ions or small molecules in the solution, and then disperse the centrifuged-purified fluorescence-quenched quantum dot material in the solvent.

(7)加入表面活性剂防止将被荧光猝灭的量子点材料制备成粉末时产生大量聚集,保证量子点粉末在与基材混合时均匀分散。(7) Add surfactant to prevent large amounts of aggregation when the fluorescence-quenched quantum dot material is prepared into powder, and ensure that the quantum dot powder is evenly dispersed when mixed with the substrate.

所述步骤S20中将所述被荧光猝灭的量子点材料制成量子点元件包括步骤:将被荧光猝灭的量子点材料做成量子点元件,所述量子点元件具体可做成量子点扩散板、量子点膜或者量子点涂层的形式。In step S20, making the fluorescence quenched quantum dot material into a quantum dot element includes the step of: making the fluorescence quenched quantum dot material into a quantum dot element, and the quantum dot element can specifically be made into a quantum dot. In the form of diffusion plates, quantum dot films or quantum dot coatings.

需要说明的是,量子点扩散板、量子点膜或者量子点涂层可以利用本领域已知的方法来制备,例如在一些实施例中,量子点膜可以利用涂膜机将量子点溶液与丙烯酸体系胶水混合制备而成,特别的,其中量子点溶液与胶水的质量比为(1~2):20,例如:1:20、1.1:20、1.2:20、1.3:20、1.4:20、1.5:20、1.6:20、1.7:20、1.8:20、1.9:20、2:20等。其中量子点溶液的质量浓度为5%~10%,例如5%、6%、7%、8%、9%、10%等。在该浓度范围内,色域提升的效果更好。It should be noted that the quantum dot diffusion plate, quantum dot film or quantum dot coating can be prepared using methods known in the art. For example, in some embodiments, the quantum dot film can use a coating machine to combine a quantum dot solution with acrylic acid. The system is prepared by mixing glue. In particular, the mass ratio of quantum dot solution to glue is (1~2):20, for example: 1:20, 1.1:20, 1.2:20, 1.3:20, 1.4:20, 1.5:20, 1.6:20, 1.7:20, 1.8:20, 1.9:20, 2:20, etc. The mass concentration of the quantum dot solution is 5% to 10%, such as 5%, 6%, 7%, 8%, 9%, 10%, etc. Within this density range, the color gamut improvement effect is better.

相应的,本公开还提供一种液晶显示面板,包括以上任一实施例提供的背光模组。Correspondingly, the present disclosure also provides a liquid crystal display panel, including the backlight module provided in any of the above embodiments.

示例的,如图1所示,该液晶显示面板100包括背光模组10以及背光模组10上方的LCD20。该背光模组10包括由下至上依次堆叠的:LED光源11、量子点扩散板12、下增亮片13、复合膜14。如图2所示,该液晶显示面板100包括背光模组10以及背光模组10上方的LCD20。该背光模组10包括由下至上依次堆叠的:LED光源11、扩散板15、量子点膜16、下增亮片13、复合膜14。For example, as shown in FIG. 1 , the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 . The backlight module 10 includes: an LED light source 11, a quantum dot diffusion plate 12, a lower brightness enhancement sheet 13, and a composite film 14 stacked in sequence from bottom to top. As shown in FIG. 2 , the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 . The backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.

示例的,如图2所示,该液晶显示面板100包括背光模组10以及背光模组10上方的LCD20。该背光模组10包括由下至上依次堆叠的:LED光源11、扩散板15、量子点膜16、下增亮片13、复合膜14。For example, as shown in FIG. 2 , the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 . The backlight module 10 includes, stacked from bottom to top: an LED light source 11, a diffusion plate 15, a quantum dot film 16, a lower brightness enhancement sheet 13, and a composite film 14.

示例的,如图3所示,该液晶显示面板100包括背光模组10以及背光模组10上方的LCD20。该背光模组10包括由下至上依次堆叠的:LED光源11、扩散板15、量子点涂层17、下增亮片13、复合膜14。For example, as shown in FIG. 3 , the liquid crystal display panel 100 includes a backlight module 10 and an LCD 20 above the backlight module 10 . The backlight module 10 includes stacked from bottom to top: LED light source 11, diffusion plate 15, quantum dot coating 17, lower brightness enhancement sheet 13, and composite film 14.

该LCD20包括阵列基板和对置基板(未图示),二者彼此对置以形成液晶盒,在液晶盒中填充有液晶材料。该对置基板例如为彩膜基板。阵列基板的每个子像素单元的像素电极用于施加电场对液晶材料的旋转的程度进行控制从而进行显示操作。The LCD 20 includes an array substrate and a counter substrate (not shown), which are opposed to each other to form a liquid crystal cell, and the liquid crystal cell is filled with liquid crystal material. The opposite substrate is, for example, a color filter substrate. The pixel electrode of each sub-pixel unit of the array substrate is used to apply an electric field to control the degree of rotation of the liquid crystal material to perform display operations.

以下结合实验具体说明,以下实施例仅是本发明的示例性实施方式,不是对本发明的限定。The following is specifically explained in combination with experiments. The following examples are only exemplary embodiments of the present invention and do not limit the present invention.

实施例1Example 1

如图1所示,本实施例提供一种背光模组以及量子点元件的制备方法,该背光模组包括由下至上依次堆叠的LED光源、量子点扩散板、下增亮片以及复合膜。其中,背光红光采用新红粉,绿光采用529nm的绿色荧光粉。As shown in FIG. 1 , this embodiment provides a method for preparing a backlight module and a quantum dot element. The backlight module includes an LED light source, a quantum dot diffusion plate, a lower brightness enhancement sheet, and a composite film stacked in sequence from bottom to top. Among them, the red light of the backlight uses new red powder, and the green light uses 529nm green phosphor.

该量子点元件为经过猝灭剂荧光猝灭处理的CdSe体系量子点材料制备成的扩散板,制备方法包括:将量子点材料溶液与PS粒子混合均匀利用挤出机三层共挤,上下两层为PS,中间层为PS与量子点材料的混合层,也可以单层基础,本实施例为三层挤出。参数:三层共计上下层的厚度为400μm,中间层为700μm,总厚度为1.5mm。The quantum dot element is a diffusion plate made of CdSe system quantum dot material that has been treated with a quencher for fluorescence quenching. The preparation method includes: mixing the quantum dot material solution and PS particles evenly and using an extruder to co-extrude the upper and lower layers. The first layer is PS, and the middle layer is a mixed layer of PS and quantum dot material. It can also be a single-layer basis. This embodiment is a three-layer extrusion. Parameters: The total thickness of the upper and lower layers of the three layers is 400μm, the middle layer is 700μm, and the total thickness is 1.5mm.

用CR 250(光谱辐射度计)测试过屏后的色点,过屏后的色点X=0.28,Y=0.29,过屏色域:DCIP3=93.8%。Use CR 250 (spectral radiometer) to test the color point after passing through the screen. The color point after passing through the screen is X=0.28, Y=0.29, and the color gamut after passing through the screen: DCIP3=93.8%.

实施例2Example 2

如图2所示,本实施例提供一种背光模组以及量子点元件的制备方法,该背光模组包括由下至上依次堆叠的:LED光源、扩散板、量子点膜、下增亮片、复合膜。As shown in Figure 2, this embodiment provides a method for preparing a backlight module and a quantum dot element. The backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot film, lower brightness enhancement sheet, composite membrane.

该量子点元件为经过猝灭剂荧光猝灭处理的CdSe体系量子点材料制备成量子点膜,该量子点膜共三层,包括量子点胶层以及涂布于量子点胶层上下表面的PET。制备方法包括:利用涂膜机将量子点溶液与丙烯酸体系胶水混合制备成量子点胶层,其中量子点溶液与胶水的质量比为1:20,其中量子点溶液的质量浓度为7%。胶水层的厚度为60μm,PET的厚度为60μm,膜的总厚度为180μm。The quantum dot element is a quantum dot film prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher. The quantum dot film has three layers, including a quantum dot glue layer and PET coated on the upper and lower surfaces of the quantum dot glue layer. . The preparation method includes: using a film coating machine to mix a quantum dot solution and an acrylic system glue to prepare a quantum dot glue layer, where the mass ratio of the quantum dot solution to the glue is 1:20, and the mass concentration of the quantum dot solution is 7%. The thickness of the glue layer is 60μm, the thickness of PET is 60μm, and the total thickness of the film is 180μm.

用CR 250测试过屏后的色点,过屏后的色点X=0.28,Y=0.29,过屏色域:DCIP3=94%。Use CR 250 to test the color point after passing through the screen. The color point after passing through the screen is X=0.28, Y=0.29, and the color gamut after passing through the screen: DCIP3=94%.

实施例3Example 3

如图3所示,本实施例提供一种背光模组以及量子点元件的制备方法,该背光模组包括由下至上依次堆叠的:LED光源、扩散板、量子点涂层、下增亮片、复合膜。As shown in Figure 3, this embodiment provides a method for preparing a backlight module and a quantum dot element. The backlight module includes stacked from bottom to top: LED light source, diffusion plate, quantum dot coating, lower brightness enhancement sheet, Composite membrane.

该量子点元件为经过猝灭剂荧光猝灭处理的CdSe体系量子点材料制备成量子点涂层,该涂层的胶水比例和量子点的浓度与实施例2相同。The quantum dot element is a quantum dot coating prepared from a CdSe system quantum dot material that has undergone fluorescence quenching treatment with a quencher. The glue ratio and quantum dot concentration of the coating are the same as those in Example 2.

用CR 250测试过屏后的过屏色域:DCIP3=93.7%Use CR 250 to test the cross-screen color gamut: DCIP3=93.7%

对比例Comparative ratio

对比例的基本结构与实施例1相同,区别仅在于扩散板中没有经过猝灭剂荧光猝灭的量子点材料,用CR 250测试该扩散板的过屏色域为DCIP3=92%。The basic structure of the comparative example is the same as that of Example 1. The only difference is that there is no quantum dot material that has been fluorescence quenched by the quencher in the diffusion plate. The cross-screen color gamut of the diffusion plate is DCIP3=92% when tested with CR 250.

根据以上结果可以看出,实施例1至实施例3的过屏色域均高于对比例的过屏色域,例如实施例1的过屏色域为93.8%,对比例的过屏色域为92%。说明将含有被荧光猝灭的量子点材料的量子点元件与LED光源搭配使用,可以提升色域,使显示效果更佳。这是由于荧光猝灭量子点吸光可以吸收掉串扰波段的光所导致的。According to the above results, it can be seen that the cross-screen color gamut of Examples 1 to 3 is higher than that of the comparative example. For example, the cross-screen color gamut of Example 1 is 93.8%, and the cross-screen color gamut of the comparative example is 93.8%. is 92%. It shows that using quantum dot components containing fluorescence-quenched quantum dot materials with LED light sources can improve the color gamut and make the display better. This is due to the fact that fluorescence quenched quantum dots can absorb light in the crosstalk band.

以上对本公开实施例所提供的背光模组及其制备方法、液晶显示面板进行了详细介绍,本文中应用了具体个例对本公开的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本公开的方法及其核心思想;同时,对于本领域的技术人员,依据本公开的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本公开的限制。The backlight module, its preparation method, and the liquid crystal display panel provided by the embodiments of the present disclosure have been introduced in detail. This article uses specific examples to illustrate the principles and implementation methods of the present disclosure. The description of the above embodiments is only for It helps to understand the methods and core ideas of the present disclosure; at the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present disclosure. In summary, the content of this specification does not It should be understood as a limitation of this disclosure.

Claims (20)

一种背光模组,包括:量子点元件以及设于所述量子点元件一侧的LED光源;其中,所述量子点元件的材料包括被荧光猝灭的量子点材料。A backlight module includes: a quantum dot element and an LED light source provided on one side of the quantum dot element; wherein the material of the quantum dot element includes a quantum dot material that is quenched by fluorescence. 根据权利要求1所述的背光模组,其中,所述被荧光猝灭的量子点材料的特征吸收峰为480~520nm。The backlight module of claim 1, wherein the characteristic absorption peak of the fluorescence-quenched quantum dot material is 480 to 520 nm. 根据权利要求1所述的背光模组,其中,所述量子点元件为量子点膜、量子点扩散板或量子点涂层。The backlight module of claim 1, wherein the quantum dot element is a quantum dot film, a quantum dot diffusion plate or a quantum dot coating. 根据权利要求3所述的背光模组,其中,所述背光模组为直下式背光模组,所述LED光源呈阵列分布;其中,所述量子点元件为量子点扩散板,所述量子点扩散板与所述LED光源的出光面相对。The backlight module according to claim 3, wherein the backlight module is a direct backlight module, and the LED light sources are distributed in an array; wherein the quantum dot elements are quantum dot diffusion plates, and the quantum dots The diffusion plate is opposite to the light exit surface of the LED light source. 根据权利要求3所述的背光模组,其中,所述背光模组为直下式背光模组,所述LED光源呈阵列分布,所述背光模组还包括扩散板,所述扩散板与所述LED光源的出光面相对;其中,所述量子点元件为量子点膜或量子点涂层,所述量子点膜或量子点涂层设于所述扩散板远离所述LED光源的一侧。The backlight module according to claim 3, wherein the backlight module is a direct-type backlight module, the LED light sources are distributed in an array, the backlight module further includes a diffusion plate, the diffusion plate and the The light-emitting surfaces of the LED light sources are opposite; wherein, the quantum dot element is a quantum dot film or a quantum dot coating, and the quantum dot film or quantum dot coating is provided on the side of the diffusion plate away from the LED light source. 根据权利要求3所述的背光模组,其中,所述背光模组为侧入式背光模组,所述背光模组还包括设于所述量子点元件一侧的导光板以及设于所述导光板端面的LED灯条,所述LED光源设于所述LED灯条上;其中,所述量子点元件为量子点膜或量子点涂层。The backlight module according to claim 3, wherein the backlight module is an edge-type backlight module, and the backlight module further includes a light guide plate provided on one side of the quantum dot element and a light guide plate provided on one side of the quantum dot element. An LED light bar on the end face of the light guide plate, the LED light source is provided on the LED light bar; wherein the quantum dot element is a quantum dot film or a quantum dot coating. 根据权利要求3所述的背光模组,其中,所述量子点膜包括:量子点胶层以及涂布于量子点胶层上下表面的PET层;所述量子点胶层的材料包括:所述被荧光猝灭的量子点材料和胶体。The backlight module of claim 3, wherein the quantum dot film includes: a quantum dot glue layer and a PET layer coated on the upper and lower surfaces of the quantum dot glue layer; the material of the quantum dot glue layer includes: the Quantum dot materials and colloids that are quenched by fluorescence. 根据权利要求7所述的背光模组,其中,所述量子点胶层的厚度为40~100μm,所述PET层的厚度为60~120μm,所述量子点膜的总厚度为180~320μm。The backlight module according to claim 7, wherein the thickness of the quantum dot glue layer is 40~100 μm, the thickness of the PET layer is 60~120 μm, and the total thickness of the quantum dot film is 180~320 μm. 根据权利要求3所述的背光模组,其中,所述量子点扩散板的材料包括:所述被荧光猝灭的量子点材料和透光塑料;所述透光塑料包括PS、PC或PMMA中的至少一种。The backlight module according to claim 3, wherein the material of the quantum dot diffusion plate includes: the quantum dot material quenched by fluorescence and light-transmitting plastic; the light-transmitting plastic includes PS, PC or PMMA. of at least one. 根据权利要求9所述的背光模组,其中,所述量子点扩散板为单层,所述量子点扩散板的材料为均匀混合的被荧光猝灭的量子点材料和透光塑料。The backlight module according to claim 9, wherein the quantum dot diffusion plate is a single layer, and the material of the quantum dot diffusion plate is uniformly mixed quantum dot material quenched by fluorescence and light-transmitting plastic. 根据权利要求9所述的背光模组,其中,所述量子点扩散板为多层,所述量子点扩散板的结构分别为上下两层的透光塑料层以及中间的量子点材料溶液制成的膜层。The backlight module according to claim 9, wherein the quantum dot diffusion plate is multi-layered, and the structure of the quantum dot diffusion plate is made of an upper and lower light-transmitting plastic layer and a quantum dot material solution in the middle. film layer. 根据权利要求3所述的背光模组,其中,所述量子点涂层包括:所述被荧光猝灭的量子点材料和胶体。The backlight module of claim 3, wherein the quantum dot coating includes: the fluorescence quenched quantum dot material and colloid. 根据权利要求1所述的背光模组,其中,所述LED光源包括蓝光芯片、红色荧光粉和绿色荧光粉;所述红色荧光粉选自YAGA和/或新红粉,所述绿色荧光粉选自β-SIAION和/或氮化物荧光粉。The backlight module according to claim 1, wherein the LED light source includes a blue light chip, red phosphor and green phosphor; the red phosphor is selected from YAGA and/or New Red Powder, and the green phosphor is selected from β-SIAION and/or nitride phosphor. 根据权利要求13所述的背光模组,其中,所述绿色荧光粉的发射波长为490~600nm。The backlight module according to claim 13, wherein the emission wavelength of the green phosphor is 490~600 nm. 根据权利要求1所述的背光模组,其中,所述被荧光猝灭的量子点材料经猝灭剂处理,所述猝灭剂选自Fe 3+、Co 2+、Ag +、邻硝基苯酚、绿原酸中的至少一种。 The backlight module of claim 1, wherein the fluorescence-quenched quantum dot material is treated with a quencher, and the quencher is selected from Fe 3+ , Co 2+ , Ag + , o-nitro At least one of phenol and chlorogenic acid. 根据权利要求1所述的背光模组,其中,所述量子点选自:CdSe、CdTe、InP、硅量子点或石墨烯量子点中的至少一种。The backlight module of claim 1, wherein the quantum dots are selected from at least one of CdSe, CdTe, InP, silicon quantum dots or graphene quantum dots. 一种背光模组的制备方法,包括步骤:A method for preparing a backlight module, including the steps: 提供被荧光猝灭的量子点材料;Provide quantum dot materials that are quenched by fluorescence; 将所述被荧光猝灭的量子点材料制成量子点元件;以及Making the fluorescence quenched quantum dot material into a quantum dot element; and 在所述量子点元件的一侧制备LED光源。An LED light source is prepared on one side of the quantum dot element. 根据权利要求17所述的背光模组的制备方法,所述提供被荧光猝灭的量子点材料,包括步骤:The method for preparing a backlight module according to claim 17, said providing a quantum dot material quenched by fluorescence, including the steps of: 利用化学法合成量子点;Using chemical methods to synthesize quantum dots; 利用溶剂、抗溶剂对合成的量子点胶体进行离心纯化,以去除多余的长链配体;Use solvents and antisolvents to centrifuge the synthesized quantum dot colloids to remove excess long-chain ligands; 将离心纯化好的量子点胶体分散在有机溶剂中而得到量子点溶液;The quantum dot colloid purified by centrifugation is dispersed in an organic solvent to obtain a quantum dot solution; 将所述量子点溶液的浓度调整到约10mg/mL;Adjust the concentration of the quantum dot solution to approximately 10 mg/mL; 在所述量子点溶液中加入可使所述量子点荧光猝灭的小分子或者金属离子;Adding small molecules or metal ions that can quench the fluorescence of the quantum dots into the quantum dot solution; 离心将所述量子点溶液中多余的离子或者小分子去除,再将离心纯化好且被荧光猝灭的量子点材料分散在溶剂中;Centrifuge to remove excess ions or small molecules in the quantum dot solution, and then disperse the centrifugally purified and fluorescence-quenched quantum dot material in the solvent; 加入表面活性剂防止将被荧光猝灭的量子点材料制备成粉末时产生大量聚集,保证量子点粉末在与基材混合时均匀分散。Adding surfactant prevents large amounts of aggregation when the fluorescence-quenched quantum dot material is prepared into powder, and ensures that the quantum dot powder is evenly dispersed when mixed with the substrate. 一种液晶显示面板,包括权利要求1至16中任一项所述的背光模组。A liquid crystal display panel comprising the backlight module according to any one of claims 1 to 16. 一种液晶显示面板,包括权利要求17或18所述的制备方法制备得到的背光模组。A liquid crystal display panel, including a backlight module prepared by the preparation method described in claim 17 or 18.
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