[go: up one dir, main page]

WO2022000997A1 - Poudre de carbure de silicium dopé par un élément de terre rare - Google Patents

Poudre de carbure de silicium dopé par un élément de terre rare Download PDF

Info

Publication number
WO2022000997A1
WO2022000997A1 PCT/CN2020/134379 CN2020134379W WO2022000997A1 WO 2022000997 A1 WO2022000997 A1 WO 2022000997A1 CN 2020134379 W CN2020134379 W CN 2020134379W WO 2022000997 A1 WO2022000997 A1 WO 2022000997A1
Authority
WO
WIPO (PCT)
Prior art keywords
rare earth
silicon carbide
earth element
carbide powder
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/134379
Other languages
English (en)
Chinese (zh)
Inventor
靳婉琪
布勒琴科·耶夫亨
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SICC CO Ltd
Original Assignee
SICC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202010615817.5A external-priority patent/CN111892055B/zh
Priority claimed from CN202010613663.6A external-priority patent/CN111908472B/zh
Application filed by SICC CO Ltd filed Critical SICC CO Ltd
Publication of WO2022000997A1 publication Critical patent/WO2022000997A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present application relates to a silicon carbide powder doped with rare earth elements, which belongs to the technical field of semiconductor materials.
  • Silicon carbide As a third-generation semiconductor material, is widely used in power electronics, optoelectronic devices and other fields because of its excellent properties such as large band gap, high saturation electron mobility, strong breakdown field, and high thermal conductivity. . High-quality crystals are the cornerstone of the development of semiconductor and information industries, and their preparation level restricts the preparation and performance of downstream devices.
  • the physical vapor transport (PVT) method is the main method for growing silicon carbide crystals.
  • the equipment used for growing silicon carbide crystals by the physical vapor transport method is simple, and the process is easy to control.
  • defects such as dislocations and polytypes will be generated.
  • additives are often added in the crystal growth process.
  • Patent US20090053125A1 discloses that adding Ce silicide or carbide during the growth of 4H-SiC single crystal can suppress the generation of polytype defects.
  • CeSi 2 or CeC 2 is placed in a small graphite crucible, dispersed and buried in the SiC powder source, sublimated into the gas phase during the crystal growth process, and finally doped into the silicon carbide lattice, thereby promoting the growth of 4H-SiC and inhibit the production of other polytypes.
  • the silicide or carbide of cerium is placed in a small graphite crucible and then buried in the powder source. The compound of cerium cannot be evenly distributed in the powder, which will inevitably lead to the whole crystal growth process.
  • the inhomogeneous distribution in time and space is also unfavorable for the inhibition of crystal form.
  • the dopant is simply mixed with silicon carbide powder, the dopant does not enter the powder, even if it is uniformly distributed in space, because the melting point and sublimation speed of cerium silicide or carbide and silicon carbide exist. Differences, in the entire crystal growth process, there will still be uneven distribution of time.
  • the introduction of small graphite crucibles is equivalent to the introduction of new variables to the crystal growth system. For the high-purity silicon carbide single crystal growth process, the variables that need to control the purity increase, the process becomes more complicated, and the inhibition effect on polytypes during the growth process of silicon carbide crystals is not ideal.
  • the present application provides a silicon carbide powder doped with rare earth elements.
  • the silicide of rare earth elements is doped in the silicon carbide crystal phase.
  • the rare earth elements will be gradually released with the sublimation of the silicon carbide powder, realizing the uniform doping of rare earth elements in time and space, thus effectively suppressing the generation of polytypes.
  • a rare earth element-doped silicon carbide powder comprising a silicon carbide crystal phase and a rare earth element silicide, the rare earth element silicide doped in the silicon carbide crystalline phase.
  • the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is 0.001-5wt%; preferably, the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is 0.005-2.5 wt %; preferably, the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is 0.02-0.2 wt %.
  • the lower limit of the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is selected from 0.03wt%, 0.04wt%, 0.05wt%, 0.06wt%, 0.07wt%, 0.08wt%, 0.09wt% %, 0.1t%, 0.11wt%, 0.12wt%, 0.13wt%, 0.14wt%, 0.15wt%, 0.16wt%, 0.17wt%, 0.18wt% or 0.19wt%
  • the silicide of the rare earth element is
  • the upper limit of the doping concentration in the silicon carbide crystal phase is selected from 0.03wt%, 0.04wt%, 0.05wt%, 0.06wt%, 0.07wt%, 0.08wt%, 0.09wt%, 0.1t%, 0.11wt%, 0.12 wt %, 0.13 wt %, 0.14 wt %, 0.15 wt %, 0.16 wt %
  • the rare earth element is selected from at least one of lanthanides, scandium and yttrium; preferably, the rare earth element is selected from at least one of cerium, lanthanum, praseodymium, neodymium, scandium and yttrium.
  • the purity of the rare earth element-doped silicon carbide powder is not less than 99.99%; preferably, the purity of the rare earth element-doped silicon carbide powder is not less than 99.999%.
  • the silicide of the rare earth element is obtained by the following preparation method: the rare earth element-containing substance is reacted with high-purity silicon powder at a high temperature.
  • the purity of the rare earth element-containing substance is not less than 99.99%, and the rare earth element-containing substance is a solid powder with a particle size of not more than 100 ⁇ m.
  • the rare earth element-containing substance is an oxide of a rare earth element.
  • the molar ratio of the rare earth element in the rare earth element-containing substance to the high-purity silicon powder is 1:2 to 4, and preferably, the molar ratio of the doped rare-earth element to the high-purity silicon powder is 1:2 ⁇ 3.
  • silicides of rare earth elements are prepared by selecting oxides of rare earth elements.
  • commercially available silicides and carbides of rare earth elements commercially available The silicides and carbides of rare earth elements have high prices and low purity), which greatly reduces production costs and improves product purity.
  • the conditions of the high-temperature reaction are: the rare earth element-containing substance and the high-purity silicon powder are reacted under vacuum conditions at a temperature of 1400-1800° C. for 1-5 hours; preferably, the conditions of the high-temperature reaction are: Rare earth element substances and high-purity silicon powder are reacted for 2-4 hours at a pressure not higher than 10 -2 Pa and a temperature of 1500-1600°C.
  • the silicon carbide powder doped with rare earth elements is agglomerated particles, the particle size of the agglomerated particles is not greater than 2 mm, the particle size of the single crystal grains in the agglomerated particles is not greater than 500 ⁇ m, and the rare earth element doped particles are not larger than 500 ⁇ m.
  • the bulk density of the silicon carbide powder is 0.7-1.1 g/cm 3 .
  • the preparation method of the rare earth element-doped silicon carbide powder comprising the steps of: silicide of rare earth element, high-purity silicon carbide
  • the powder and high-purity carbon powder are obtained by reacting at least 5 hours at a temperature of 1100-1600 °C under vacuum conditions.
  • the silicide of rare earth element, high-purity silicon powder and high-purity carbon powder are reacted under high temperature and vacuum.
  • the high-purity carbon powder and high-purity carbon powder react to form silicon carbide, and then the silicide of rare earth element is doped
  • the hetero-packaging is carried out in the silicon carbide crystal phase, so that the rare earth element and the silicon carbide crystal phase are uniformly doped, that is, the rare earth element is doped in the raw material synthesis stage of the silicon carbide powder.
  • the rare earth elements in the silicon carbide powder will be gradually released along with the sublimation of the powder during the growth process, so as to achieve uniform doping in time and space and ensure crystal growth.
  • the process can effectively suppress polytypes from beginning to end.
  • the mass ratio of the sum of the mass of the high-purity carbon powder and the high-purity silicon powder to the silicide of the rare earth element is 100:0.001-5.
  • the mass ratio of the sum of the mass of the high-purity carbon powder and the high-purity silicon powder to the silicide of the rare earth element is 100:0.005-2.5, and the molar ratio of the high-purity carbon powder and the high-purity silicon powder is 1 ⁇ 2.5. 1.5:1.
  • the particle size of the high-purity silicon powder and the high-purity carbon powder is not greater than 100 ⁇ m; the purity of the high-purity carbon powder and the high-purity silicon powder is not less than 99.9%.
  • the preparation method includes the following steps: 1.
  • the rare earth element-doped silicide, high-purity silicon powder and high-purity carbon powder are reacted for 5-15 hours at a pressure not higher than 10 -2 Pa and a temperature of 1200-1400° C. , to obtain ⁇ -type silicon carbide powder doped with rare earth elements.
  • the preparation method further includes the following steps: (2) at the temperature of step (1), filling a protective gas, raising the temperature to 2000-2500 °C, and reacting for at least 10 hours to obtain ⁇ -type silicon carbide powder doped with rare earth elements;
  • the conditions of the synthesis reaction further include the following steps: 2 at the temperature of step 1, charging a protective gas to a pressure of 500-1000 mbar, raising the temperature to 2200-2400 °C, and reacting for 10-40 h to obtain the doping Rare earth element ⁇ -type silicon carbide powder;
  • the protective gas is a mixed gas of inert gas and hydrogen, and the volume fraction of hydrogen in the mixed gas is 2-3%. Hydrogen is mainly used to inhibit the carbonization of silicon carbide powder, so that the atmosphere in the crucible is evenly distributed.
  • the rare earth element doped silicon carbide powder according to any one of the above or the rare earth element doped silicon carbide powder prepared by the preparation method according to any one of the above are also provided.
  • Applications in the preparation of high-quality silicon carbide crystals Since the rare earth element doped silicon carbide powder or the rare earth element doped silicon carbide powder prepared by the preparation method is uniformly doped and has high purity, it is used as a raw material for silicon carbide crystals. During growth, the obtained silicon carbide crystal not only has high purity, but also has few defects, and the quality of the crystal is high.
  • Silicon carbide powder doped with rare earth elements in the present application the silicide of rare earth elements is doped in the silicon carbide crystal phase, so that the rare earth elements are uniformly doped in the silicon carbide powder.
  • the sublimation of silicon carbide powder is gradually released, and the uniform doping of rare earth elements in time and space is realized, thereby effectively suppressing the generation of polytype defects in the crystal.
  • the preparation method of the present application is simple, the conditions are easy to control, and the prepared silicon carbide powder doped with rare earth elements is not only uniformly doped with rare earth elements, but also has high purity.
  • the rare earth element in the silicon carbide powder doped with rare earth elements of the present application is uniformly doped with high purity. higher.
  • This embodiment provides a rare earth element doped silicon carbide powder, the rare earth element doped silicon carbide powder includes a silicon carbide crystal phase and a rare earth element silicide, and the rare earth element silicide is doped in in the crystalline phase of silicon carbide.
  • the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is 0.001-5 wt %; preferably, the doping concentration of the silicide of the rare earth element is 0.005-2.5 wt %. More preferably, the doping concentration of the silicide of the rare earth element in the silicon carbide crystal phase is 0.02-0.2 wt %.
  • the rare earth element is selected from at least one of lanthanides, scandium and yttrium; preferably, the rare earth element is selected from at least one of cerium, lanthanum, praseodymium, neodymium, scandium and yttrium. More preferably, the rare earth element is cerium.
  • the purity of the rare earth element doped silicon carbide powder is not less than 99.99%; preferably, the purity of the rare earth element doped silicon carbide powder is not less than 99.999%.
  • the silicon carbide powder doped with rare earth elements is agglomerated particles, the particle size of the agglomerated particles is not more than 2 mm, and the particle size of the single crystal grains in the agglomerated particles is not more than 500 ⁇ m.
  • the bulk density of the agglomerated particles is 0.7-1.1 g/cm 3 , and the bulk density after compaction is 1.1-2.0 g/cm 3 .
  • the present embodiment provides a method for preparing the above-mentioned rare-earth element-doped silicon carbide powder, which includes the following steps:
  • the rare earth element-containing material is uniformly mixed with the high-purity silicon powder, wherein the rare earth element-containing material is selected from powdered cerium (Ce) and other lanthanides (lanthanum La, praseodymium Pr, neodymium Nd, etc.) or At least one of the oxides of yttrium Y and scandium Sc; the oxide of the rare earth element is a solid powder with a particle size of not more than 100 ⁇ m, and the purity is not less than 99.99%; the doped rare earth element and high-purity silicon powder
  • the molar ratio of the doped rare earth element to the high-purity silicon powder is 1:1.5-2.5; preferably, the molar ratio of the doped rare earth element to the high-purity silicon powder is 1:1.8-2.2;
  • step (1) The mixture in step (1) is heated to 1400-1800° C. under vacuum conditions for 1-5 hours. At this temperature, the high-purity silicon powder can react with the oxides of the above rare earth elements to obtain doped rare earth elements.
  • the silicide preferably, the reaction temperature is 1500 ⁇ 1600°C, the pressure is not higher than 10 -2 Pa, and the reaction time is 2 ⁇ 4h;
  • step (2) Evenly mix the rare earth element-doped silicide, high-purity silicon powder and high-purity carbon powder in step (2), the sum of the mass of the high-purity carbon powder and high-purity silicon powder is the same as that of the rare-earth element-doped silicide.
  • the mass ratio of the silicide is 100:0.001-5; preferably, the mass ratio of the sum of the mass of the high-purity carbon powder and the high-purity silicon powder to the mass ratio of the silicide doped with rare earth elements is 100:0.005-2.5;
  • the above mixture is at a reaction temperature of 1100-1600°C, a pressure not higher than 10 -2 Pa, and a reaction time of 5-15h, wherein the molar ratio of the high-purity carbon powder and the high-purity silicon powder is 1-1.5:1, Obtaining ⁇ -type silicon carbide powder doped with rare earth elements;
  • step 1 2 temperature, charged with shielding gas, raising the temperature to 2000 ⁇ 2500 °C, the pressure was 500 ⁇ 1000mbar, the reaction time is 10 ⁇ 40h; protective gas is an inert gas into a mixed gas of H 2 and the volume fraction of mixed gas of H 2 2 to 3 percent, the inert gas is selected from argon and / or helium, to obtain rare-earth doped ⁇ -type silicon carbide powder.
  • the silicon carbide powder doped with rare earth elements is prepared according to the above method, and the difference from the above preparation method is shown in Table 1.
  • the purity of high-purity carbon powder, high-purity silicon powder and oxides of rare earth elements is greater than 99.99%
  • the filled protective gas is a mixed gas of argon gas and hydrogen gas.
  • the silicon carbide powder 1#, silicon carbide powder 2#, silicon carbide powder 3#, silicon carbide powder 4#, comparative silicon carbide powder D1#, comparative silicon carbide powder D2# and comparative silicon carbide powder D3# prepared above were used. Characterize. And the silicon carbide crystal is grown by using the above silicon carbide powder, and the polytype of the grown crystal is detected. The detection results are shown in Table 2.
  • the rare earth element-doped silicon carbide powder prepared in the present application is a pale yellow-white agglomerated particle, the rare earth element in the powder is more uniformly doped, and the purity is high, and the total impurity content does not exceed 10ppm, The purity is not less than 99.999%.
  • the rare earth element-doped silicon carbide powder of the present application is more uniform in doping, with low impurity content and high purity.
  • silicon carbide powder 1'#, silicon carbide powder 2'# and silicon carbide powder 3'#, silicon carbide powder 1'#, silicon carbide powder 2'# and carbide powder of cerium doped silicon carbide powder The mass ratio of silicon powder 3'# medium and high-purity carbon silicon powder to cerium silicide is 100:0.004. Silicon carbide powder 1#, silicon carbide powder 2#, and silicon carbide powder 3# are respectively used for the growth of silicon carbide crystals.
  • sample silicon carbide powder 1'# at a distance of 80mm from the crucible mouth sample silicon carbide powder 2'# at a distance of 90mm from the crucible mouth, and sample silicon carbide powder 3'# at a distance of 100mm from the crucible mouth.
  • Comparative silicon carbide powder D1'#, comparative silicon carbide powder D2'#, and comparative silicon carbide powder D3'# are respectively after mechanical mixing of silicon carbide powder and cerium silicide (the sum of the mass of The mass ratio of cerium silicide is 100:0.004) for the growth of silicon carbide crystals.
  • the comparison silicon carbide powder D1'# is sampled at a distance of 80mm from the crucible mouth in the growth crucible, and the comparison silicon carbide powder D2'# is 90mm away from the crucible mouth. Sampling, the comparative silicon carbide powder D3'# is sampled at a distance of 100mm from the crucible mouth.
  • the comparative silicon carbide powder R1#, the comparative silicon carbide powder R2#, and the comparative silicon carbide powder R3# are respectively placed cerium silicide in a small graphite crucible (the sum of the mass of the high-purity silicon carbide powder and the mass ratio of the cerium silicide in the small crucible is 100:0.004), buried in the silicon carbide powder for the growth of silicon carbide crystals, the comparative silicon carbide powder R1# was sampled in the same crystal growth crucible at a distance of 80 mm from the crucible mouth, and the comparative silicon carbide powder was sampled at a distance of 90 mm from the crucible mouth. R2# is sampled, and the silicon carbide powder R3# is sampled at a distance of 100mm from the crucible mouth.
  • Silicon carbide powder 1'#, silicon carbide powder 2'#, silicon carbide powder 3'#, comparative silicon carbide powder D1'#, comparative silicon carbide powder D2'#, comparative silicon carbide powder D3'#, comparative carbonization powder using GDMS The concentration of cerium (Ce) in the samples of silicon powder R1#, comparative silicon carbide powder R2#, and comparative silicon carbide powder R3# was detected, and the polytype area of the crystal rod grown from the silicon carbide powder raw material was detected. The results as shown in Table 3.
  • the Ce concentration in the raw material before the crystallization reaction is approximately equal to the Ce concentration in the raw material (because cerium silicide is not completely uniformly mixed in the raw material, and the height of the raw material is different, resulting in different Ce concentration results. ); while the cerium silicide was embedded in the silicon carbide powder with a small crucible, no Ce could be detected in the comparative silicon carbide powder R1# ⁇ R3#. The crystal growth is carried out for 20 hours.
  • the cerium silicide of the present application is doped into the silicon carbide crystal phase, the cerium is released evenly and slowly; the method of directly mixing the cerium silicide and the silicon carbide raw materials is due to the low melting point of the cerium silicide and volatilizes quickly.
  • the Ce concentration in the small crucible decreases rapidly; the cerium silicide buried in the small crucible gradually diffuses into the silicon carbide raw material, but the concentration is low, and the farther away from the small crucible, the harder it is to detect.
  • the cerium silicide of the present application is doped into the silicon carbide crystal phase, the residual cerium dopant in the raw material can still be detected after the reaction is completed.
  • the cerium silicide volatilizes quickly in the early stage, and the reaction There is little residue left in the raw material.
  • the cerium silicide in the small crucible diffuses out, and the closer it is to the small crucible, the higher the concentration.
  • the cerium silicide in the raw material of the present application is uniformly volatilized, and the crystal rod has no polymorphism; the cerium silicide and the silicon carbide powder are directly mixed, a large amount of cerium silicide volatilizes in the early stage, and the cerium silicide is insufficient in the later stage, and polytypes are easily generated in the later stage; the cerium silicide is buried In the crucible, the lack of cerium silicide in the early stage is easy to produce polytypes.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne une poudre de carbure de silicium dopé par un élément de terre rare, comprenant une phase cristalline de carbure de silicium et un siliciure d'élément de terre rare, le siliciure d'élément de terre rare étant dopé dans la phase cristalline de carbure de silicium. La concentration de dopage du siliciure d'élément de terre rare dans la phase cristalline de carbure de silicium est comprise entre 0,001 et 5 % en poids. Dans la poudre de carbure de silicium dopé par un élément de terre rare, le siliciure d'élément de terre rare est dopé dans la phase cristalline de carbure de silicium, de telle sorte que l'élément de terre rare est uniformément dopé dans la poudre de carbure de silicium, et pendant la croissance cristalline, l'élément de terre rare est progressivement libéré conjointement avec la sublimation de la poudre de carbure de silicium, ce qui permet d'obtenir le dopage uniforme de l'élément de terre rare en termes de temps et d'espace, et d'empêcher ainsi efficacement la génération de défauts polymorphes dans le cristal ; en outre, le siliciure d'élément de terre rare est obtenu par sélection et utilisation d'un oxyde de l'élément de terre rare avec une pureté relativement élevée, de telle sorte que le coût de production de la poudre de carbure de silicium dopé par un élément de terre rare est fortement réduit, et la pureté du produit est améliorée.
PCT/CN2020/134379 2020-06-30 2020-12-08 Poudre de carbure de silicium dopé par un élément de terre rare Ceased WO2022000997A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202010615817.5A CN111892055B (zh) 2020-06-30 2020-06-30 一种掺杂稀土元素的碳化硅粉料及其制备方法
CN202010615817.5 2020-06-30
CN202010613663.6A CN111908472B (zh) 2020-06-30 2020-06-30 一种掺杂稀土元素的碳化硅粉料及其制备方法与应用
CN202010613663.6 2020-06-30

Publications (1)

Publication Number Publication Date
WO2022000997A1 true WO2022000997A1 (fr) 2022-01-06

Family

ID=79317363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/134379 Ceased WO2022000997A1 (fr) 2020-06-30 2020-12-08 Poudre de carbure de silicium dopé par un élément de terre rare

Country Status (1)

Country Link
WO (1) WO2022000997A1 (fr)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953579A (en) * 1974-07-02 1976-04-27 Cabot Corporation Methods of making reactive metal silicide
CN1769181A (zh) * 2004-11-03 2006-05-10 中国科学院半导体研究所 单相钆硅化合物以及制备方法
CN101357763A (zh) * 2007-07-31 2009-02-04 沈阳大学 高纯超细SiC粉体的制备方法
CN103467101A (zh) * 2012-06-08 2013-12-25 赵钧永 一种稀土绿碳化硅及其用途和稀土绿碳化硅磨料磨具
US20170057879A1 (en) * 2015-08-28 2017-03-02 Rolls-Royce High Temperature Composites, Inc. Ceramic Matrix Composite Including Silicon Carbide Fibers In a Ceramic Matrix Comprising a Max Phase Compound
CN109722712A (zh) * 2019-03-12 2019-05-07 广州南砂晶圆半导体技术有限公司 一种SiC单晶金属杂质的均匀掺杂的方法
CN110377613A (zh) * 2019-07-23 2019-10-25 昆明理工大学 一种同时制备高纯硅化物和共晶硅基材料的方法
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法
CN111892055A (zh) * 2020-06-30 2020-11-06 山东天岳先进材料科技有限公司 一种掺杂稀土元素的碳化硅粉料及其制备方法
CN111908472A (zh) * 2020-06-30 2020-11-10 山东天岳先进材料科技有限公司 一种掺杂稀土元素的碳化硅粉料及其制备方法与应用

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953579A (en) * 1974-07-02 1976-04-27 Cabot Corporation Methods of making reactive metal silicide
CN1769181A (zh) * 2004-11-03 2006-05-10 中国科学院半导体研究所 单相钆硅化合物以及制备方法
CN101357763A (zh) * 2007-07-31 2009-02-04 沈阳大学 高纯超细SiC粉体的制备方法
CN103467101A (zh) * 2012-06-08 2013-12-25 赵钧永 一种稀土绿碳化硅及其用途和稀土绿碳化硅磨料磨具
US20170057879A1 (en) * 2015-08-28 2017-03-02 Rolls-Royce High Temperature Composites, Inc. Ceramic Matrix Composite Including Silicon Carbide Fibers In a Ceramic Matrix Comprising a Max Phase Compound
CN109722712A (zh) * 2019-03-12 2019-05-07 广州南砂晶圆半导体技术有限公司 一种SiC单晶金属杂质的均匀掺杂的方法
CN110377613A (zh) * 2019-07-23 2019-10-25 昆明理工大学 一种同时制备高纯硅化物和共晶硅基材料的方法
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法
CN111892055A (zh) * 2020-06-30 2020-11-06 山东天岳先进材料科技有限公司 一种掺杂稀土元素的碳化硅粉料及其制备方法
CN111908472A (zh) * 2020-06-30 2020-11-10 山东天岳先进材料科技有限公司 一种掺杂稀土元素的碳化硅粉料及其制备方法与应用

Similar Documents

Publication Publication Date Title
CN111892055B (zh) 一种掺杂稀土元素的碳化硅粉料及其制备方法
CN100595144C (zh) 用于半导体单晶生长的高纯碳化硅粉的人工合成方法
EP3333288B1 (fr) Creuset en sic, procédé de préparation du creuset et procédé de production d'un monocristal de sic
CN102560671B (zh) 半绝缘碳化硅单晶
CN110055587B (zh) 一种高纯石墨坩埚及高质量碳化硅单晶制备方法
CN111908472B (zh) 一种掺杂稀土元素的碳化硅粉料及其制备方法与应用
EP4477786A1 (fr) Procédé de préparation d'un monocristal 3c-sic
CN102701208A (zh) 高纯碳化硅粉体的高温固相合成方法
WO2009026269A1 (fr) Stabilisation du polytype 4h pendant la croissance par sublimation de monocristaux de sic
CN115821362B (zh) 用于制备n型SiC单晶的方法
TW201718959A (zh) 碳化矽單晶之製造方法
CN115124040A (zh) 一种提高大粒径碳化硅粉料占比的固相合成方法
CN102272358A (zh) 单晶培养用反应容器以及单晶的培养方法
CN113788480B (zh) 一种高纯碳化硅制备方法及对应的高纯碳化硅
KR101614325B1 (ko) 바나듐 함유 탄화규소 분말의 제조방법 및 이에 의해 제조된 고저항 탄화규소 단결정
Rumsby et al. Growth of large indium phosphide crystals
WO2022000997A1 (fr) Poudre de carbure de silicium dopé par un élément de terre rare
CN114790573A (zh) 一种高掺杂均匀性p型SiC的生长方法
JP2021502944A (ja) 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法
Mason Growth and characterization of transition metal silicides
CN106591952A (zh) 一种SiC晶片的制备方法
CN114717659A (zh) 一种砷化镓单晶晶体及其制备方法
CN111575801B (zh) 一种制备方法和晶片生长原料
JP7518593B2 (ja) 炭化ケイ素粉末の製造方法
CN118563408B (zh) 用于制备n型4H-SiC单晶的方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20942869

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20942869

Country of ref document: EP

Kind code of ref document: A1