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WO2019199019A1 - Appareil et procédé de mesure de défaut basés sur une onde térahertz - Google Patents

Appareil et procédé de mesure de défaut basés sur une onde térahertz Download PDF

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Publication number
WO2019199019A1
WO2019199019A1 PCT/KR2019/004203 KR2019004203W WO2019199019A1 WO 2019199019 A1 WO2019199019 A1 WO 2019199019A1 KR 2019004203 W KR2019004203 W KR 2019004203W WO 2019199019 A1 WO2019199019 A1 WO 2019199019A1
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WIPO (PCT)
Prior art keywords
defect
peak
terahertz wave
normal
measurement object
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Ceased
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PCT/KR2019/004203
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English (en)
Korean (ko)
Inventor
김학성
박동운
오경환
김헌수
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Industry University Cooperation Foundation IUCF HYU
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Industry University Cooperation Foundation IUCF HYU
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges

Definitions

  • the present invention relates to a terahertz wave-based defect measuring apparatus and method, and more particularly to a terahertz wave-based defect measuring apparatus and method for measuring a defect of an object through the terahertz wave.
  • One technical problem to be solved by the present invention is to provide a terahertz wave-based defect measuring apparatus and method with improved defect detection probability in the measurement object.
  • Another technical problem to be solved by the present invention is to provide a terahertz wave-based defect measuring apparatus and method capable of imaging a defect in a measurement object in two and three dimensions.
  • Another technical problem to be solved by the present invention is to provide a terahertz wave-based defect measuring apparatus and method for non-contact and non-destructive detection of defects in the measurement object.
  • Another technical problem to be solved by the present invention is to provide a terahertz wave-based defect measuring apparatus and method for imaging to clearly distinguish between the defect portion and the normal portion in the measurement object.
  • the technical problem to be solved by the present invention is not limited to the above.
  • the present invention provides a terahertz-based defect measuring apparatus.
  • the terahertz-based defect measuring apparatus may include a terahertz wave receiver configured to receive terahertz waves reflected from a measurement object for each pixel of the measurement object, and reflections from the surface of the measurement object in the received terahertz waves. And a defect determination unit configured to determine, on a pixel-by-pixel basis, whether a peak larger than a predetermined defect peak criterion exists between the first normal peak and the second normal peak reflected from the rear surface through the surface of the measurement object.
  • the terahertz-based defect measuring apparatus further includes an imaging unit configured to image the presence or absence of a defect according to a determination result of the defect existence determining unit, and wherein the imaging unit has a peak larger than the predetermined defect peak criterion.
  • a defective pixel and a normal pixel having no peak larger than the predetermined defect peak reference may be distinguished and imaged.
  • the imaging unit in the case of a defective pixel having a peak larger than the predetermined defect peak criterion, the time interval between the first normal peak and the second normal peak and the first normal peak and the predetermined The degree of imaging can be varied based on the ratio of time intervals between defect peaks larger than the defect peak criteria.
  • the imaging unit may display a first color in the case of a normal pixel having no peak greater than the predetermined defect peak criterion, and in the case of a defective pixel having a peak larger than the predetermined defect peak criterion. And a second color different from each other by different brightnesses according to the time interval ratio, thereby imaging the defects inside the measurement object in two dimensions.
  • the terahertz wave-based defect measuring apparatus further includes a defect depth determination unit that acquires defect depth information of a pixel having a peak larger than the predetermined defect peak criterion, in the defect existence determination unit,
  • the imaging unit may image a defect depth based on the defect depth information.
  • the imaging unit may include imaging a defect in a measurement object in three dimensions in consideration of the defect depth information.
  • the defect depth determining unit may further include a time interval ratio between the first normal peak and the second normal peak and a time interval ratio between the first normal peak and a defect peak larger than the predetermined defect peak criterion and a measurement object.
  • Defect depth information may be obtained in consideration of the thickness of.
  • the defect depth determining unit may be configured between the first normal peak and the second normal peak.
  • Providing first defect depth information in consideration of a time interval, a time interval ratio between the first normal peak and the first defect peak, and a thickness of a measurement object, and providing a time interval between the first normal peak and the second normal peak and the The second defect depth information may be provided in consideration of the time interval ratio between the first normal peak and the second defect peak and the thickness of the measurement object.
  • the present invention provides a terahertz wave-based defect measurement method.
  • the terahertz wave-based defect measuring method may further include a terahertz wave receiving step of receiving terahertz waves reflected from the measuring object for each pixel of the measuring object, and a surface of the measuring object in the received terahertz waves. And determining whether there is a peak larger than a predetermined defect peak criterion between pixels between the first normal peak reflected by the second normal peak and the second normal peak reflected from the rear surface through the surface of the measurement object. .
  • the terahertz wave-based defect measuring method may further include an imaging step of imaging the presence or absence of a defect according to the determination result of the determination of the presence or absence of the defect, wherein the imaging step is performed based on the predetermined defect peak criterion. It is possible to distinguish and image a defective pixel having a large peak and a normal pixel having no peak larger than the predetermined defect peak reference.
  • the imaging step in the case of a defect pixel having a peak larger than the predetermined defect peak reference, the time interval between the first normal peak and the second normal peak and the first normal peak and the pre- The degree of imaging may be varied based on the ratio of time intervals between defect peaks larger than a given defect peak criterion.
  • the terahertz wave-based defect measuring method may further include a defect depth determining step of acquiring defect depth information of a pixel having a peak larger than the predetermined defect peak criterion in the defect existence determination step.
  • the defect depth may be imaged based on the defect depth information.
  • the determining of the depth of the defect may include measuring and determining a time interval between the first normal peak and the second normal peak and a time interval between the first normal peak and a defect peak larger than the predetermined defect peak criterion.
  • Defect depth information may be obtained in consideration of the thickness of the object.
  • the defect depth determining step may include the first normal peak and the second normal peak.
  • the first defect depth information in consideration of the time interval between the first normal peak and the first defect peak and the thickness of the measurement object, and provides a time interval between the first normal peak and the second normal peak;
  • Second defect depth information may be provided in consideration of a time interval ratio between the first normal peak and the second defect peak and a thickness of a measurement object.
  • a terahertz wave receiver for receiving the terahertz wave reflected from the measurement object for each pixel of the measurement object, reflected from the surface of the measurement object in the received terahertz wave
  • Defect existence determination unit for determining, by pixel, whether there is a peak larger than a predetermined defect peak criterion between the first normal peak and the second normal peak reflected from the rear surface through the surface of the measurement object, and the determination result of the defect existence determination unit
  • a defect depth determiner for obtaining defect depth information of a pixel having a peak larger than the defect peak criterion in the defect presence determiner.
  • a terahertz wave-based defect measuring apparatus capable of imaging a position of a defect in a measurement object in two and three dimensions and improving defect detection accuracy may be provided.
  • FIG. 1 is a view showing a terahertz wave-based defect measurement apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating an object measured by a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG 3 is a view showing that the terahertz wave is reflected from the measurement object without a defect through the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 4 is a diagram illustrating that a terahertz wave is reflected from a defective measurement object through a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 5 illustrates an example of time versus terahertz wave intensity data received from a normal measurement object without internal defects according to an exemplary embodiment of the present invention.
  • FIG. 6 illustrates an example of time versus terahertz wave intensity data received from a defect measuring object having an internal defect according to an embodiment of the present invention.
  • FIG. 7 is a view showing a measurement object used for measuring the performance of the terahertz wave-based defect measurement apparatus according to an embodiment of the present invention.
  • FIG. 8 is a photograph comparing the performance of the terahertz wave-based defect measuring apparatus and the conventional terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 9 is a diagram illustrating an imaging unit 3D imaging defects inside a measurement object according to an exemplary embodiment.
  • FIG. 10 is a diagram illustrating that terahertz waves are reflected from a plurality of measurement objects having defects through the terahertz wave-based defect measuring apparatus according to an exemplary embodiment of the present invention.
  • FIG. 11 illustrates an example of time versus terahertz wave intensity data received from a plurality of internal defective defect measuring objects according to an embodiment of the present invention.
  • FIG. 12 is a diagram illustrating a measurement object having a plurality of defects used for measuring the performance of a terahertz wave-based defect measurement apparatus according to an embodiment of the present disclosure.
  • FIG. 13 and 14 are photographs comparing the performance of measuring a plurality of defects by a terahertz wave-based defect measuring apparatus and a conventional terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 15 is a diagram illustrating an imaging unit 3D imaging a plurality of defects inside a measurement object according to an exemplary embodiment.
  • 16 is a flowchart illustrating a terahertz wave-based defect measurement method according to an embodiment of the present invention.
  • first, second, and third are used to describe various components, but these components should not be limited by the terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.
  • Each embodiment described and illustrated herein also includes its complementary embodiment.
  • the term 'and / or' is used herein to include at least one of the components listed before and after.
  • connection is used herein to mean both indirectly connecting a plurality of components, and directly connecting.
  • FIG. 1 is a view showing a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention
  • Figure 2 is a view showing an object measured through the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • the terahertz wave-based defect measuring apparatus includes a terahertz wave irradiation unit 50, a terahertz wave receiving unit 100, a defect existence determining unit 200, and a defect depth determining unit 300. ), And the imaging unit 400.
  • the terahertz wave irradiation unit 50 may irradiate the terahertz wave L toward a measurement object (sample, S).
  • the light source of the terahertz wave L may be pulsed.
  • the light source of the terahertz wave L may be continuous.
  • the number of light sources of the terahertz wave L may be selected according to design specifications.
  • the number of light sources of the terahertz wave L may be one or two or more.
  • the wavelength of the terahertz wave (L) may be 3 mm to 30 ⁇ m.
  • the frequency of the terahertz wave (L) may be 0.1 THz to 10 THz.
  • the terahertz wave L may exhibit stronger transmittance than visible or infrared rays.
  • the terahertz wave (L) can be used even in the presence of external light, it is possible to measure the defect of the measurement object (S) without a separate process for blocking the external light.
  • the measurement object S to which the terahertz wave L is irradiated may be a semiconductor package.
  • the measurement object S irradiated with the terahertz wave L may be a composite material, a general material, or the like.
  • the terahertz wave irradiation unit 50 may irradiate the terahertz wave L for each pixel of the measurement object S.
  • the terahertz wave irradiation unit 50 and the measurement object 50 may be moved relative to each other.
  • the terahertz wave irradiator 50 may move in a predetermined direction while the measurement object 50 is fixed to a stage (not shown).
  • the terahertz wave irradiation unit 50 is fixed and the measurement object 50 may be moved by a stage.
  • the terahertz wave receiver 100 may receive the terahertz wave L reflected from the measurement object S.
  • the terahertz wave irradiation unit 50 may irradiate the terahertz wave L for each pixel of the measurement object S.
  • FIG. The terahertz wave receiver 100 may receive the terahertz wave L reflected from the measurement object S for each pixel of the measurement object S.
  • the terahertz wave receiver 100 may receive a terahertz wave (L) reflected from a region without a defect therein, or may receive a terahertz wave (L) reflected from a region having a defect therein. .
  • FIG. 3 is a view showing that terahertz wave is reflected from a measurement object without a defect through a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention
  • FIG. 4 is a terahertz wave according to an embodiment of the present invention. A diagram showing that the terahertz wave is reflected from the defective measurement object through the base defect measuring apparatus.
  • the terahertz wave receiver 100 when there are no defects inside the measurement object S, the terahertz wave receiver 100 has a first reflected terahertz wave L 1 and a second reflected terahertz wave L 2 for each pixel. ) Can be received.
  • the first reflective terahertz wave L 1 may be the terahertz wave L reflected from the surface of the measurement object.
  • the second reflective terahertz wave (L 2 ) may be the terahertz wave (L) reflected from the rear surface through the surface of the measurement object.
  • the terahertz wave receiver 100 when there is a defect D inside the measurement object S, the terahertz wave receiver 100 includes a first reflected terahertz wave L 1 and a second reflected terahertz wave L 2. ), The 3-1th reflected terahertz wave L 3-1 , and the 3-2nd reflected terahertz wave L 3-2 .
  • the first and second reflection terahertz wave (L 1, L 2) is a terahertz wave (L 1, L 2) of the first and second reflecting described with reference to Figure 3 Can be.
  • the 3-1th reflective terahertz wave L 3-1 may be the terahertz wave L reflected from the surface of the defect D in the measurement object S.
  • the third-2 reflecting terahertz wave (L 3-2 ) may be the terahertz wave (L) reflected from the rear surface through the surface of the defect (D) in the measurement object (S).
  • the terahertz wave receiver 100 may provide the terahertz wave reflected from the measurement object S to the defect determination unit 200.
  • the defect existence determination unit 200 may receive the terahertz wave for each pixel from the terahertz wave receiver 100 and analyze the same to determine the presence of a defect.
  • FIG. 5 illustrates an example of time versus terahertz wave intensity data received from a normal measurement object without internal defects according to an embodiment of the present invention
  • FIG. 6 is a defect measurement with internal defects according to an embodiment of the present invention.
  • An example of time zone terahertz wave intensity data received from an object is shown.
  • the defect determination unit 200 may receive the first and second reflected terahertz waves (received from the terahertz wave receiver 100). L 1 , L 2 ) may be provided. That is, the defect determination unit 200 may be provided with terahertz waves L 1 and L 2 reflected from the defect-free region described above with reference to FIG. 3.
  • the defect determination unit 200 may provide the terahertz wave provided as a response graph over time.
  • the defect existence determination unit 200 may determine the presence or absence of a defect in the measurement object S by analyzing the response graph according to the time.
  • the defect may be delamination, holes, cracks, moisture absorption, or the like.
  • the defect existence determination unit 200 analyzes and measures whether there is a peak greater than a predetermined defect peak criterion DS between the first normal peak PL 1 and the second normal peak PL 2 .
  • the presence or absence of a defect in the subject may be determined.
  • the first normal peak may be a peak indicated by the first reflected terahertz wave L 1 in the response graph over time.
  • the second normal peak may be a peak indicated by the second reflected terahertz wave L 2 in the response graph over time.
  • the defect existence determination unit 200 may measure the measurement object S.
  • FIG. It can be judged that there is no defect in the For example, when there are no defects in the measurement object, a response graph over time may appear as shown in FIG. 5.
  • the defect determination unit 200 may reflect the first and second reflected terahertz waves reflected from the terahertz wave receiver 100.
  • L 1 , L 2 the 3-1 and 3-2 reflected terahertz waves L 3-1 and L 3-2 .
  • the terahertz wave may be expressed as a response graph over time.
  • the response graph according to the time may include a first normal peak PL 1 , a second normal peak PL 2 , and a defect peak PL 3 .
  • the first and second normal peaks PL 1 and PL 2 may be the same as the first and second normal peaks PL 1 and PL 2 described with reference to FIG. 4.
  • the 3-1 and 3-2 reflected terahertz wave (L 3-1-, L 3-2 ) is a defect valley (VL 3 ) and defect peak ( PL 3 ). That is, the 3-1 reflected terahertz wave (L 3-1 ) may be represented by the defect valley (VL 3 ), and the 3-2 reflected terahertz wave (L 3-2 ) is the defect peak. It may be expressed as (PL 3 ).
  • the defect presence determination unit 200 includes: It may be determined that there is a defect in the measurement object. For example, as shown in FIG. 6, between the first normal peak PL 1 and the second normal peak PL 2 , the defect peak PL 3 larger than the defect peak reference DS. If there is, it can be determined that there is a defect in the measurement object.
  • the defect peak criterion DS may be determined within a range of values smaller than the first and second normal peaks PL 1 and PL 2 and greater than an intensity corresponding to noise.
  • the defect determination unit 200 may determine whether there is a defect for each pixel of the measurement object S.
  • FIG. Accordingly, the defect existence determination unit 200 may determine the presence or absence of a defect for each pixel of the measurement object (S). That is, the defect existence determination unit 200 may classify the measurement object S into a defect pixel and a normal pixel.
  • the imaging unit 400 may image the presence or absence of a defect according to the determination result of the defect determination unit 200.
  • the imaging unit 400 may distinguish and image a defective pixel having a peak greater than the defect peak criterion DS and a normal pixel having no peak greater than the defect peak criterion DS.
  • the imaging unit 400 may determine a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and the first normal.
  • the degree of imaging may be varied based on the ratio of the time interval ⁇ t D between the peak PL 1 and the defect peak PL 3 .
  • Equation 1 may be used.
  • the imaging unit 400 may constantly display the imaging degree I in the case of the normal pixel.
  • the imaging degree I may be represented as zero.
  • the imaging unit 400 represents a first color in the case of the normal pixel and a second color different from the first color in the case of the defect pixel, thereby imaging the defect in the measurement object S in two dimensions. Can be.
  • the imaging unit 400 may display the second color with different brightness according to the degree of defect of the defective pixel.
  • the defect degree of the defective pixel may be obtained by the imaging degree (I). Accordingly, the imaging unit may image not only the defect D inside the measurement object S but also the degree of defect in two dimensions.
  • FIG. 7 is a view showing a measurement object used for measuring the performance of the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention
  • Figure 8 is a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention and conventional This is a comparison of the performance of terahertz wave-based defect measuring devices.
  • FIG. 7 a plan view and a side view of a measurement object S including a normal portion R and a defective portion D are illustrated.
  • the defect portion (D) is arranged in a triangular shape on one side of the measurement object (S).
  • FIG. 8A a photograph of an image of the measurement object S described above with reference to FIG. 7 using a conventional terahertz wave-based defect measuring apparatus is shown.
  • the measurement object S is shown by photographing the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 8A Although the normal part R and the defective part D are distinguished, many black noises are found in the normal part R. In contrast, referring to FIG. 8B, it can be seen that the normal part R and the defective part D are clearly distinguished, and there is no noise in the normal part R.
  • FIG. 8B it can be seen that the normal part R and the defective part D are clearly distinguished, and there is no noise in the normal part R.
  • the conventional terahertz wave-based defect measuring apparatus determines the presence or absence of a defect based on whether a defect peak occurs at a specific time for each pixel.
  • terahertz waves inevitably involve phase differences in the generation of light. Therefore, even if terahertz waves are irradiated on the same pixel, there is a difference in their phases. That is, when it is determined whether a defect peak has occurred at a specific time, an error occurs because the terahertz wave phases at a specific time are respectively different.
  • the intensity of the received terahertz waves varies due to the phase difference between the terahertz waves reflected from the defect-free normal portion. Accordingly, according to the existing technology, it is interpreted that a large number of black noises are found in the normal portion R.
  • the defect part D appears in red with different brightness and is normal.
  • the portions R all appear black with the same brightness, so that the position of the defect can be precisely known.
  • the terahertz wave-based defect measuring apparatus passing through the surface of the first normal peak PL 1 and the measuring object S reflected from the surface of the measuring object S from the rear Between the reflected second normal peak PL 2 , it is determined on a pixel-by-pixel basis whether there is a peak larger than a predetermined defect peak criterion DS, and the defect pixel having a peak larger than the defect peak criterion DS and the defect Normal pixels without peaks larger than the peak reference DS may be distinguished and imaged.
  • the defect depth determining unit 400 may obtain defect depth information of a pixel having a peak larger than the defect peak criterion DS in the defect existence determining unit 200. have.
  • the defect depth determination unit 400 may include a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and the first normal peak PL.
  • the defect depth information may be obtained in consideration of the time interval ⁇ t D ratio between 1 ) and the defect peak PL 3 and the thickness of the measurement object S.
  • the defect depth information may be obtained in consideration of the imaging degree I and the thickness of the measurement object S.
  • Equation 2 may be used to obtain the defect depth information.
  • the imaging unit 400 may image a defect depth based on the defect depth information D d . That is, the imaging unit 400 may image the defect D in the measurement object S in three dimensions.
  • FIG. 9 is a diagram illustrating an imaging unit 3D imaging defects inside a measurement object according to an exemplary embodiment.
  • the measurement object S according to FIG. 7 is imaged but imaged in three dimensions in consideration of defect depth information.
  • the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention, it is possible to clearly detect not only the two-dimensional position of the defect but also the three-dimensional position.
  • FIG. 10 is a diagram illustrating that terahertz waves are reflected from a plurality of measurement objects having defects through the terahertz wave-based defect measuring apparatus according to an exemplary embodiment of the present invention.
  • the terahertz wave receiver 100 may have a first reflected terahertz wave L 1 .
  • the first and second reflection terahertz wave (L 1, L 2) may be the same as the said first and second reflection terahertz wave (L 1, L 2) described with reference to Figure 3 have.
  • the 4-1th reflective terahertz wave L 4-1 may be the terahertz wave L reflected from the surface of the first defect D 1 in the measurement object S.
  • the fourth-2 reflecting terahertz wave L 4-2 may be the terahertz wave L reflected from the rear surface through the surface of the first defect D 1 in the measurement object S. Referring to FIG.
  • the 5-1th reflected terahertz wave L 5-1 may be the terahertz wave L reflected from the surface of the second defect D 2 in the measurement object S.
  • the fifth-2 reflected terahertz wave L 5-2 may be the terahertz wave L reflected from the rear surface through the surface of the second defect D 2 in the measurement object S. Referring to FIG.
  • FIG. 11 illustrates an example of time versus terahertz wave intensity data received from a plurality of internal defective defect measuring objects according to an embodiment of the present invention.
  • the defect determination unit 200 may include the first and second reflected terahertz waves L 1 and L 2 reflected from the terahertz wave receiver 100, and the fourth through the first and second reflections.
  • 4-2 reflective terahertz waves (L 4-1 , L 4-2 ), and 5-1 and 5-2 reflective terahertz waves (L 5-1 , L 5-2 ) may be provided.
  • the terahertz waves provided may be expressed in response graphs over time.
  • the response graph according to the time may include a first normal peak PL 1 and a second normal peak PL 2 . , A first defect peak PL 4 , and a second defect peak PL 5 following the first defect peak PL 4 .
  • the first and second normal peaks PL 1 and PL 2 may be the same as the first and second normal peaks PL 1 and PL 2 described with reference to FIG. 5.
  • the 4-1 and 4-2 reflected terahertz wave (L 4-1 , L 4-2 ) is the first defect valley (VL 4 ) and the first in the response graph over time
  • the defect peak PL 4 may be represented. That is, the 4-1th reflected terahertz wave L 4-1 is represented by the first defect valley VL 4 , and the 4-2nd reflected terahertz wave L 4-2 is the first defect. It can be expressed as a defect peak PL 4 .
  • the 5-1 and 5-2 reflected terahertz waves L 5-1 and L 5-2 have a second defect valley VL 5 and a second defect peak PL 5 in the response graph over time. Can be represented. That is, the 5-1th reflected terahertz wave L 5-1 is represented by the second defect valley VL 5 , and the 5-2nd reflected terahertz wave L 5-2 is the second It can be expressed as a defect peak PL 5 .
  • the defect presence determination unit 200 includes: It may be determined that there is a defect in the measurement object. For example, as shown in FIG. 11, between the first normal peak PL 1 and the second normal peak PL 2 , the first and second defects larger than the defect peak reference DS. If there are peaks PL 3 and PL 4 , it may be determined that there are two defects in the measurement object S.
  • the imaging unit 400 distinguishes a defective pixel from a normal pixel, and in the case of the defective pixel, an imaging degree may be different for each of the first and second defects D 1 and D 2 .
  • the first imaging degree may be varied based on the ratio of the time interval ⁇ t D1 between the first defect peaks PL 4 .
  • a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 , the first normal peak PL 1 , and the second defect peak PL The degree of second imaging may be varied based on the ratio of time intervals ⁇ t D2 ).
  • Equations 3 and 4 may be used to obtain the first imaging degree and the second imaging degree.
  • the imaging unit 400 may represent the normal pixel and the defective pixel differently and image in two dimensions.
  • FIG. 12 is a diagram illustrating a measurement object having a plurality of defects used for measuring the performance of a terahertz wave-based defect measurement apparatus according to an embodiment of the present disclosure.
  • 12A illustrates a perspective exploded view of the measurement object S
  • FIG. 12B illustrates a plan view of the measurement object S
  • FIG. 12C illustrates a side view of the measurement object S.
  • FIG. 13 and 14 are photographs comparing the performance of measuring a plurality of defects by a terahertz wave-based defect measuring apparatus and a conventional terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • FIG. 13A a photograph of an image of a first defect D 1 of the measurement object S described above with reference to FIG. 12 by a conventional terahertz wave-based defect measuring apparatus is illustrated, and FIG. 13B.
  • the first defect D 1 of the measurement object S described above is illustrated by using a terahertz wave-based defect measuring apparatus according to an exemplary embodiment of the present invention.
  • the conventional terahertz wave-based defect measuring apparatus may be the same as the conventional terahertz wave-based defect measuring apparatus described above with reference to FIG. 8. Accordingly, detailed description is omitted.
  • both the conventional terahertz wave-based defect measuring apparatus and the terahertz wave-based defect measuring apparatus according to the embodiment of the present invention are the first defects ( D 1 ) can be imaged, but it can be seen that the terahertz wave-based defect measuring apparatus of the present invention has better sensitivity compared to existing equipment.
  • FIG. 14A a photograph of an image of a second defect D 2 of the measurement object S described above with reference to FIG. 12 by a conventional terahertz wave-based defect measuring apparatus is illustrated.
  • the second defect D 2 of the measurement object S described above is illustrated by using a terahertz wave-based defect measuring apparatus according to an embodiment of the present invention.
  • the terahertz wave-based defect measuring apparatus As can be seen from (a) of FIG. 14, in the conventional terahertz wave-based defect measuring apparatus, as the depth of the defect becomes deeper, not only an error due to the phase difference of the terahertz wave but also an error due to noise is generated. It can be seen that the imaging quality for is significantly lowered. On the other hand, as can be seen in Figure 14 (b), the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention, despite the deepening of the depth of the defect, the imaging quality of the defect site is found to appear high Can be. That is, the terahertz wave-based defect measuring apparatus according to an embodiment of the present invention, it can be seen that even if a plurality of defects in the measurement object, all the plurality of defects can be measured clearly.
  • the defect depth determiner 400 may provide first defect depth information and second defect depth information.
  • the first defect depth information may include a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and the first normal peak PL 1 .
  • a time interval ⁇ t D1 between the first defect peak PL 4 and the thickness of the measurement object S may be provided.
  • the second defect depth information includes a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 , the first normal peak PL 1 , and the second defect peak ( PL 5 ) may be provided in consideration of the time interval ⁇ t D2 ratio and the thickness of the measurement object S.
  • Equations 5 and 6 may be used to obtain the first defect depth information and the second defect depth information.
  • D d1 first defect depth information
  • D d2 second defect depth information
  • I 1 first imaging degree
  • I 2 second imaging degree
  • S d thickness of a measurement object
  • the imaging unit 400 may image the first and second defect depths based on the first and second defect depth information D d1 and D d2 . Accordingly, the imaging unit 400 may image the first and second defects D 1 and D 2 in the measurement object S in three dimensions.
  • FIG. 15 is a diagram illustrating an imaging unit 3D imaging a plurality of defects inside a measurement object according to an exemplary embodiment.
  • the measurement object S according to FIG. 12 is imaged, but imaged in three dimensions in consideration of depth information.
  • the terahertz wave-based defect measuring apparatus according to the embodiment it can be confirmed that can detect a plurality of defects in three dimensions.
  • the terahertz wave receiver 100 for receiving the terahertz wave reflected from the measurement object S for each pixel of the measurement object S, the received Between the first normal peak PL 1 reflected from the surface of the measurement object S in the terahertz wave and the second normal peak PL 2 reflected from the rear surface through the surface of the measurement object S,
  • the imaging unit for imaging the presence or absence of a defect in accordance with the determination result of the defect existence determination unit 200 and the defect existence determination unit 200 for judging whether there is a peak larger than the predetermined defect peak reference DS (pixel) ( 400 and the defect depth determining unit 400 which acquires defect depth information of a pixel having a peak larger than the defect peak criterion DS in the defect existence determining unit 200.
  • a terahertz wave-based defect measuring apparatus capable of imaging a position of a defect in the measurement object S in two and three dimensions and improving defect detection accuracy may be provided.
  • the terahertz wave-based defect measurement apparatus according to an embodiment of the present invention has been described.
  • a terahertz wave-based defect measuring method according to an embodiment of the present invention will be described.
  • 16 is a flowchart illustrating a terahertz wave-based defect measurement method according to an embodiment of the present invention.
  • the terahertz wave receiving step S100, the presence / absence determination step S200, the defect depth determination step S300, and the imaging step S400 ) May be included.
  • the defect depth determination step S300 may be an optional step.
  • each step will be described.
  • the terahertz wave L reflected by the measurement object S may be received for each pixel of the measurement object S.
  • a specific method of receiving the terahertz wave L may be as described with reference to FIGS. 1 to 4.
  • the defect existence determination unit 200 determines, for each pixel, whether there is a peak greater than a predetermined defect peak reference DS between the first normal peak PL 1 and the second normal peak PL 2 . can do.
  • the first normal peak PL 1 may be the terahertz pile reflected from the surface of the measurement object S.
  • the second normal peak PL 2 may pass through the surface of the measurement object S and reflect the terahertz pile reflected from the rear surface.
  • the terahertz wave-based defect measuring method may image a defect in a measurement object in two or three dimensions.
  • the terahertz wave-based defect measuring method may include the step S400 in which the step S300 is omitted according to Sq1 shown in FIG. 16. Can be performed.
  • a defect pixel having a peak larger than a predetermined defect peak criterion DS and a normal pixel having no peak larger than the predetermined defect peak criterion DS may be distinguished and imaged.
  • the imaging unit 400 may determine a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and the first normal.
  • the degree of imaging may be varied based on the ratio of the time interval ⁇ t D between the peak PL1 and the defect peak larger than the predetermined defect peak criterion DS.
  • the position of the defect in the measurement object S may be imaged in two dimensions.
  • a more specific method of imaging the position of a defect in the measurement object S in two dimensions may be as described with reference to FIGS. 3 to 8.
  • the terahertz wave-based defect measuring method according to the embodiment may be performed after step S300 after step S300 according to Sq2 shown in FIG. 16. Can be.
  • the defect depth determination unit 300 may obtain defect depth information for determining a depth of a defect in the measurement object S.
  • the defect depth information includes a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and a defect peak larger than the first normal peak and the predetermined defect peak reference. It can be obtained in consideration of the time interval ( ⁇ t D ) ratio of the liver and the thickness of the measurement object (S).
  • the position of a defect in the measurement object S may be imaged in three dimensions in consideration of the defect depth information acquired in operation S300.
  • a more specific method of imaging the position of a defect in the measurement object S in three dimensions may be as described with reference to FIG. 9.
  • the terahertz wave-based defect measuring method when there are a plurality of defects in the measurement object S, all the plurality of defects may be imaged.
  • the defect peak is the first defect peak PL 4 and the defect. It may appear as a second defect peak PL 5 following the first defect peak PL 4 .
  • the terahertz wave-based defect measuring method may include the step S300 omitted according to Sq1 illustrated in FIG. 16. S400 step may be performed.
  • the defective pixel may be distinguished from the normal pixel, and in the case of the defective pixel, the degree of imaging may be different for each of the first and second defects D 1 and D 2 .
  • the imaging unit 400 determines a time interval between the first normal peak PL 1 and the second normal peak PL 2 with respect to the first defect D 1 .
  • the degree of first imaging may be varied based on the ratio of ⁇ t A ) and the time interval ⁇ t D1 between the first normal peak PL 1 and the first defect peak PL 4 .
  • the time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 , the first normal peak PL 1 , and the second defect The second imaging degree may be varied based on the ratio of the time interval ⁇ t D2 between the peaks PL 5 .
  • the positions of the plurality of defects in the measurement object S may be imaged in two dimensions.
  • a more specific method of imaging the positions of the plurality of defects in the measurement object S in two dimensions may be as described with reference to FIGS. 10 to 14.
  • the terahertz wave-based defect measuring method may include the step S400 after the step S300 according to Sq2 illustrated in FIG. 16. Can be performed.
  • the defect depth determining unit 400 may provide first defect depth information and second defect depth information.
  • the first defect depth information may include a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 and the first normal peak PL 1 .
  • a time interval ⁇ t D1 between the first defect peak PL 4 and the thickness of the measurement object S may be provided.
  • the second defect depth information includes a time interval ⁇ t A between the first normal peak PL 1 and the second normal peak PL 2 , the first normal peak PL 1 , and the second defect peak ( PL 5 ) may be provided in consideration of the time interval ⁇ t D2 ratio and the thickness of the measurement object S.
  • the imaging unit 400 may image first and second defect depths based on the first and second defect depth information D d1 and D d2 . Accordingly, the imaging unit 400 may image the first and second defects D 1 and D 2 in the measurement object S in three dimensions. A more specific method of imaging in a plurality of three dimensions may be as described with reference to FIG. 15.

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Abstract

La présente invention concerne un appareil de mesure de défaut basé sur une onde térahertz. L'appareil de mesure de défaut basé sur une onde térahertz comprend : une unité de réception d'onde térahertz pour recevoir une onde térahertz, réfléchie par un objet à mesurer, pour chaque pixel de l'objet à mesurer ; et une unité de détermination de défaut pour déterminer, pour chaque pixel, s'il existe un pic qui est supérieur à une référence de pic de défaut prédéterminée entre un premier pic normal, qui est réfléchi à partir de la surface de l'objet à mesurer, et un second pic normal, qui passe à travers la surface de l'objet à mesurer et est réfléchi par la surface arrière de ce dernier, de l'onde térahertz reçue.
PCT/KR2019/004203 2018-04-11 2019-04-09 Appareil et procédé de mesure de défaut basés sur une onde térahertz Ceased WO2019199019A1 (fr)

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CN116337806A (zh) * 2021-12-23 2023-06-27 中国石油天然气集团有限公司 一种非金属管道本体缺陷的太赫兹无损检测方法

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KR102516207B1 (ko) * 2020-12-28 2023-03-30 한국표준과학연구원 테라헤르츠파를 이용한 교량 케이블 및 텐던의 결함 탐지 장치 및 방법
KR102638751B1 (ko) * 2022-02-22 2024-02-20 (주)팬옵틱스 테라헤르츠파를 이용한 검사장치

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CN116337806A (zh) * 2021-12-23 2023-06-27 中国石油天然气集团有限公司 一种非金属管道本体缺陷的太赫兹无损检测方法

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