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WO2019188103A1 - Composé aminosilane, et composition pour formation de film contenant du silicium comprenant ledit composé aminosilane - Google Patents

Composé aminosilane, et composition pour formation de film contenant du silicium comprenant ledit composé aminosilane Download PDF

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Publication number
WO2019188103A1
WO2019188103A1 PCT/JP2019/009187 JP2019009187W WO2019188103A1 WO 2019188103 A1 WO2019188103 A1 WO 2019188103A1 JP 2019009187 W JP2019009187 W JP 2019009187W WO 2019188103 A1 WO2019188103 A1 WO 2019188103A1
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group
silicon
butyl group
isopropyl
butyl
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Japanese (ja)
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元輝 平
川上　純一
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Sumitomo Seika Chemicals Co Ltd
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Sumitomo Seika Chemicals Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Definitions

  • the technical field of the present invention relates to a novel aminosilane compound and a composition for forming a silicon-containing film containing the compound.
  • silicon-containing thin films are manufactured into various forms of thin films such as silicon films, silicon oxide films, silicon nitride films, silicon carbonitride films, and silicon oxynitride films by various deposition processes. It is applied in various fields. Among them, silicon oxide film and silicon nitride film have very good barrier properties and oxidation resistance, so insulating film, intermetallic dielectric material, seed layer, spacer, hard mask, trench isolation, diffusion prevention in device fabrication It functions as a film, an etching stopper layer, and a protective film layer.
  • ammonia radicals NH 3.
  • DCS dichlorosilane
  • NH 3 ammonia
  • ALD atomic layer deposition
  • Patent Document 1 since the introduction of carbon into the silicon nitride film can cause a structural defect, there is a possibility that the insulation resistance is deteriorated. Further, the method of Patent Document 2 has a problem that TCS, which is a chloride, reacts with water to generate HCl, which corrodes exhaust system piping.
  • TCS which is a chloride
  • the present invention has been conceived under such circumstances, and does not contain carbon and halides.
  • the formation of a silicon-containing film is achieved by improving the adsorptivity to the substrate surface during film formation.
  • the main object is to provide a silicon precursor that enables film formation at a lower temperature by improving the film speed and lowering the decomposition temperature.
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • a precursor for forming a silicon-containing film represented by:
  • Item 3 The precursor according to Item 2, wherein the silicon-containing film is formed by chemical vapor deposition.
  • Item 4 The precursor according to Item 3, wherein the chemical vapor deposition is atomic layer deposition.
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • Item 6 The composition according to Item 5, wherein the silicon-containing film is formed by chemical vapor deposition.
  • Item 7 The composition according to Item 6, wherein the chemical vapor deposition is atomic layer deposition.
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • a process for producing an aminosilane compound represented by (A) a synthesis step of synthesizing an aminochlorosilane compound by adding dichlorosilane and a first amine to a solvent; (B) a filtration step for removing by-product salts by filtration; (C) A production process comprising a synthesis step of synthesizing an aminosilane compound by adding a second amine to the filtrate; and (d) a distillation step of isolating the aminosilane compound by distillation.
  • the first amine in the synthesis step (a) is diisopropylamine, and the aminochlorosilane compound is represented by the following formula (1):
  • the second amine in the synthesis step (c) is R 1 R 2 NH
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • the first amine in the synthesis step (a) is R 1 R 2 NH (Wherein R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group) Represents a substituent selected from the group, except when both R 1 and R 2 are isopropyl groups.) And the aminochlorosilane compound is represented by the following formula (2):
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • Item 9 The production method according to Item 8, wherein the second amine in the synthesis step (c) is diisopropylamine.
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • the present invention by using a specific aminosilane compound as a silicon precursor, it becomes possible to form a film at a lower temperature without generating structural defects and corrosive gas.
  • a specific aminosilane compound as a silicon precursor, it becomes possible to form a film at a lower temperature without generating structural defects and corrosive gas.
  • the method of the present invention since the film formation rate is improved, a semiconductor device can be manufactured at lower cost and higher productivity.
  • 1 is a 1 H-NMR chart of an aminosilane compound (diisopropylaminotertiarybutylaminosilane) obtained by the production method of the present invention.
  • 1 is a 1 H-NMR chart of an aminosilane compound (diisopropylaminodimethylaminosilane) obtained by the production method of the present invention.
  • the present invention has the following formula:
  • R 1 and R 2 are each independently H, methyl group, ethyl group, n-propyl group, isopropyl (i-Pr) group, n-butyl group, sec-butyl group, isobutyl group and tert -Represents a substituent selected from the group consisting of butyl groups, except when both R 1 and R 2 are isopropyl groups.
  • the aminosilane compound represented by these is provided.
  • NR 1 R 2 are NH (t-Bu) and N (CH 3 ) 2 .
  • the dipole moment of the aminosilane compound may be 0.85D or more, for example, 1.0D or more, and may be 2.0D or less, for example, 1.35D or less.
  • the dipole moment of the aminosilane compound means a vector amount from a negative charge to a positive charge derived from a partial charge on an atom in the molecule of the aminosilane compound.
  • the dipole moment can be calculated by using a commercially available molecular chemistry calculation program. For example, it can be calculated by a density functional method (B3LYP / cc-pVDZ) using Gaussian 09 manufactured by Gaussian.
  • the method for producing an aminosilane compound according to the present invention includes (a) a synthesis step in which dichlorosilane and a first amine are added to a solvent to synthesize an aminochlorosilane compound, and (b) a filtration step in which by-product salts are removed by filtration. (C) a synthesis step of synthesizing an aminosilane compound by adding a second amine to the filtrate, and (d) a distillation step of isolating the aminosilane compound by distillation.
  • Examples of the solvent that can be used in the present invention include hydrocarbons such as hexane, cyclohexane, heptane, nonane, and decane; halogenated hydrocarbons such as dichloroethane, dichloromethane, and chloroform; benzene, toluene, xylene, chlorobenzene, trichlorobenzene, and the like. Aromatic hydrocarbons; and mixtures thereof. Among these, hydrocarbons such as hexane, cyclohexane, heptane, nonane and decane are preferable, and hexane is particularly preferable.
  • the amount of solvent used is usually 0.1 to 50 times the mass of dichlorosilane.
  • the first amine is first dissolved in an organic solvent and dichlorosilane is added thereto, or the dichlorosilane is dissolved in an organic solvent and the first amine is added thereto. Any method can be applied to this reaction.
  • the amount of the first amine to be used is usually 1 to 4 times mol and preferably 1.5 to 2.5 times mol from the viewpoint of improving the yield with respect to dichlorosilane as a raw material.
  • the reaction temperature is preferably low. However, if the reaction temperature is too low, the yield may be reduced. Done.
  • the reaction time is usually in the range of 0.5 to 10 hours.
  • step (b) by-product salt is removed from the crude product in the reactor.
  • a dry inert gas for example, under nitrogen or argon.
  • the filtration temperature is not uniquely determined, but can be applied from 10 ° C. to the boiling point of the solvent used. It is preferable to carry out in the range of 20 to 65 ° C.
  • step (c) the second amine is added dropwise to the filtrate obtained in step (b).
  • the amount of the second amine used is desirably 2 mol or more with respect to 1 mol of the total amount of the aminochlorosilane as an intermediate. Preferably there is.
  • reaction is an exothermic reaction, it is preferred that the reaction is carried out at a low temperature. However, if the reaction temperature is too low, the yield may be reduced, so that the reaction is carried out in the range of -5 ° C to 60 ° C, preferably 0 to 50 ° C. Is called.
  • the reaction time is usually in the range of 0.5 to 10 hours.
  • step (d) the aminosilane compound is isolated by distillation, for example, vacuum distillation.
  • the amine and the organic solvent are easily removed, and the aminosilane compound can be purified with sufficiently high purity.
  • An intermediate (1) represented by the formula (1) is produced, and R 1 R 2 NH is added to the intermediate (1). It is the method of manufacturing by making the amine compound represented by these react.
  • R 1 and R 2 and preferred examples of NR 1 R 2 are as described above in the description of the aminosilane compound.
  • R 1 R 2 NH is reacted with dichlorosilane to form the following formula (2):
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • a silicon-containing film such as a silicon nitride film or a silicon oxide film can be formed on a substrate. More specifically, the method for forming a silicon-containing film according to the present invention includes: (E) On the substrate, the following formula:
  • R 1 and R 2 each independently comprise H, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group and tert-butyl group
  • the substrate temperature may be 100 to 600 ° C., preferably 100 to 550 ° C. From the viewpoint of physical properties of the obtained film, energy saving, etc., the temperature of the substrate may be 550 ° C. or lower, for example, 450 ° C. or lower, preferably 400 ° C. or lower, more preferably 350 ° C. or lower, and further preferably Is 325 ° C. or lower. Further, the temperature of the substrate may be 100 ° C. or higher, for example, 150 ° C. or higher.
  • the film formation temperature may be the temperature of at least one of steps (e) to (h), for example, the temperature of the substrate when contacting the aminosilane composition in step (e).
  • step (e) may be performed after the inside of the reaction system is replaced with an inert gas.
  • the pressure at the time of injecting the aminosilane composition gas or the reaction gas in the step (e) may be 0.05 to 100 Torr, preferably 0.05 to 50 Torr.
  • the supply time of the raw material aminosilane composition gas may be 10 seconds or less, for example, 5 seconds or less, preferably 3 seconds or less, more preferably 2 seconds or less.
  • the purge in the step (f) can be performed by introducing an inert gas such as argon.
  • the purge time in the step (f) may be 60 seconds or less, for example, 30 seconds or less, preferably 25 seconds or less.
  • the pressure at the time of injecting the aminosilane composition gas or reaction gas in the step (g) may be 0.05 to 100 Torr, and preferably 0.05 to 50 Torr. From the viewpoint of energy saving and the like, the supply time of the reaction gas may be 30 seconds or less, for example, 10 seconds or less, preferably 5 seconds or less.
  • step (g) at least one gas selected from nitrogen, ammonia, dinitrogen monoxide, nitrogen monoxide, and nitrogen dioxide is used as a reactive gas when forming a silicon nitride film having a Si—N bond.
  • a silicon oxide film having a Si—O bond one or more gases selected from oxygen, ozone, and nitric oxide can be used.
  • the purge in step (h) can be performed by introducing an inert gas such as argon.
  • the purge time in the step (f) may be 120 seconds or shorter, for example, 60 seconds or shorter, preferably 45 seconds or shorter.
  • the aminosilane compound in the present invention is suitably used for the production of a silicon-containing film (silicon oxide film, silicon nitride film, etc.) by the ALD method.
  • the lower limit of the ALD window may be 300 ° C., preferably 275 ° C.
  • the upper limit of the ALD window may be 550 ° C., preferably 525 ° C.
  • the ALD window generally refers to a temperature range between the vaporization temperature of the silicon-containing film precursor compound and the thermal decomposition temperature of the silicon-containing film precursor compound. It can be defined as a temperature range from a point at which the deposition rate is maximized to a point at which the deposition rate is minimized when the film temperature is taken on the horizontal axis and the deposition rate is taken on the vertical axis.
  • Example 1 Synthesis of diisopropylamino tertiary butylaminosilane
  • 101.2 g (1.0 mol) of diisopropylamine and 800 g of hexane were added to a 2000 mL flask equipped with a blowing tube, a thermometer, a cooling tube, and a motor stirrer. Cooled to ° C.
  • a gas of 50.5 g (0.5 mol) of dichlorosilane was introduced into the liquid at a rate of 50 mL per minute for 4 hours while being kept warm and stirred at 0 ° C., white smoke was produced and a white salt was produced. .
  • This diisopropylaminochlorosilane solution was added to a 2000 mL flask in which a thermometer, a condenser tube, and a motor agitator were set and purged with nitrogen, and was thrown into the refrigerant using acetone and cooled to 0 ° C. with a cooler. While keeping the temperature at 0 ° C. and stirring, 73.14 g (1.0 mol) of tertiary butylamine was slowly added dropwise over 2 hours.
  • the crude diisopropylamino tertiary butylaminosilane solution is subjected to atmospheric distillation at an internal temperature of 80 ° C to remove hexane from the crude diisopropylaminotertiarybutylaminosilane solution, and further distilled under reduced pressure at an internal temperature of 90 ° C and 10 Torr using a distillation tower.
  • the final product was obtained with high purity.
  • the obtained aminosilane compound has the following formula:
  • Example 2 Synthesis of diisopropylaminodimethylaminosilane
  • 101.2 g (1.0 mol) of diisopropylamine and 800 g of hexane were added to a 2000 mL flask equipped with a blowing tube, a thermometer, a cooling tube, and a motor stirrer. Cooled to ° C.
  • a gas of 50.5 g (0.5 mol) of dichlorosilane was introduced into the liquid at a rate of 50 mL per minute for 4 hours while being kept warm and stirred at 0 ° C., white smoke was produced and a white salt was produced. .
  • This diisopropylaminochlorosilane solution was added to a 2000 mL flask in which a thermometer, a condenser tube, and a motor agitator were set and purged with nitrogen, and was thrown into the refrigerant using acetone and cooled to 0 ° C. with a cooler. While keeping the temperature at 0 ° C. and stirring, 45.08 g (1.0 mol) of dimethylamine was slowly blown in over 4 hours. Thereafter, solids mainly composed of amine hydrochloride by-produced by filtration under reduced pressure in a nitrogen-substituted glove box were removed to obtain a hexane solution containing diisopropylaminodimethylaminosilane.
  • the crude diisopropylaminodimethylaminosilane solution is distilled at atmospheric pressure at an internal temperature of 80 ° C. to remove hexane from the crude diisopropylaminodimethylaminosilane solution, and further distilled under reduced pressure at an internal temperature of 90 ° C. and 10 Torr using a distillation tower.
  • the product was obtained with high purity.
  • the obtained aminosilane compound has the following formula:
  • Example 3 Formation of silicon oxide film using diisopropylaminotertiarybutylaminosilane
  • a silicon substrate was placed in a vacuum apparatus and heated to a predetermined temperature of 150 to 600 ° C.
  • the aminosilane composition containing diisopropylaminotertiarybutylaminosilane obtained in Example 1 and a carrier gas was injected for a predetermined time of 1 to 6 seconds and adsorbed on a heated silicon substrate.
  • argon gas was introduced into the apparatus for a predetermined time of 6 to 30 seconds to purge unadsorbed aminosilane composition and by-products.
  • ozone was injected as a reaction gas at a pressure of 8 Torr for 3 seconds to form an atomic layer of silicon oxide derived from diisopropylamino tertiary butylaminosilane deposited on the substrate. Subsequently, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. The above cycle was repeated to obtain a silicon oxide film having a desired thickness.
  • Example 4 Formation of silicon oxide film using diisopropylaminodimethylaminosilane
  • a silicon substrate was placed in a vacuum apparatus and heated to a predetermined temperature of 150 to 600 ° C.
  • the aminosilane composition containing diisopropylaminodimethylaminosilane and carrier gas obtained in Example 2 was injected for a predetermined time of 1 to 6 seconds and adsorbed on a heated silicon substrate. Subsequently, argon gas was introduced into the apparatus for a predetermined time of 6 to 30 seconds to purge unadsorbed aminosilane composition and by-products.
  • ozone was injected as a reaction gas at a pressure of 8 Torr for 3 seconds to form an atomic layer of silicon oxide derived from diisopropylaminodimethylaminosilane deposited on the substrate. Subsequently, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. The above cycle was repeated to obtain a silicon oxide film having a desired thickness.
  • Example 5 Formation of silicon nitride film using diisopropylaminotertiarybutylaminosilane
  • a silicon substrate was placed in a vacuum apparatus and heated to a predetermined temperature of 100 to 600 ° C.
  • the aminosilane composition containing diisopropylaminotertiarybutylaminosilane and carrier gas obtained in Example 1 was injected at a predetermined pressure of 0.05 to 100 Torr and adsorbed on a heated silicon substrate. The apparatus was then purged of unadsorbed aminosilane composition and by-products.
  • ammonia was injected as a reaction gas at a pressure of 0.05 to 100 Torr to form an atomic layer of silicon nitride derived from diisopropylamino tertiary butylaminosilane deposited on the substrate.
  • unreacted ammonia gas and by-products were purged. The above cycle was repeated to obtain a silicon nitride film having a desired film thickness.
  • Example 6 Formation of silicon nitride film using diisopropylaminodimethylaminosilane
  • a silicon substrate was placed in a vacuum apparatus and heated to a predetermined temperature of 100 to 600 ° C.
  • the aminosilane composition containing diisopropylaminodimethylaminosilane and carrier gas obtained in Example 2 was injected at a predetermined pressure of 0.05 to 100 Torr and adsorbed on a heated silicon substrate. The apparatus was then purged of unadsorbed aminosilane composition and by-products.
  • ammonia as a reaction gas was injected at a pressure of 0.05 to 100 Torr to form an atomic layer of silicon nitride derived from diisopropylaminodimethylaminosilane deposited on the substrate.
  • unreacted ammonia gas and by-products were purged. The above cycle was repeated to obtain a silicon nitride film having a desired film thickness.
  • Silicon-containing films were formed using bisdiethylaminosilane.
  • a silicon substrate was placed in a vacuum apparatus and heated to a predetermined temperature of 150 to 600 ° C.
  • An aminosilane composition containing bisdiethylaminosilane and a carrier gas was injected for a predetermined time of 1 to 6 seconds and adsorbed on a heated silicon substrate. Then, the unadsorbed aminosilane composition and by-products were purged into the apparatus by introducing argon gas for a predetermined time of 6 to 90 seconds.
  • ozone was injected as a reaction gas for 3 seconds to form an atomic layer of silicon oxide derived from bisdiethylaminosilane deposited on the substrate. Subsequently, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. The above cycle was repeated to obtain a silicon oxide film having a desired thickness.
  • Table 1 shows specific vapor deposition methods
  • Table 2 shows the relationship between the raw material aminosilane supply time and the deposition rate at a substrate temperature of 300 ° C
  • Table 3 shows the raw aminosilane purge time at a substrate temperature of 300 ° C.
  • the relationship between the deposition rates is shown
  • Table 4 shows the relationship between the substrate temperature and the deposition rate. The thickness of the formed layer was measured with an ellipsometer.
  • Example 3 and Example 4 both have a constant deposition rate in 1 second or more, whereas the silicon oxide film of Comparative Example 1 under the same conditions has 3 It was confirmed that the deposition rate became constant at a second or more, and in Examples 3 and 4, the time until the deposition rate became constant was shorter than that of Comparative Example 1.
  • Example 3 and Example 4 had a constant deposition rate when the argon purge time was 20 seconds or longer, whereas the silicon oxide film of Comparative Example 1 had an argon purge time.
  • the deposition rate became constant after 60 seconds or more, and it was confirmed that Example 3 and Example 4 had a short time until the deposition rate became constant.
  • the silicon oxide films manufactured in Examples 3 and 4 have a temperature range (ALD window) in which ALD film formation is possible, while the substrate temperature is 250 to 500 ° C. It was confirmed that the silicon oxide film of Example 1 was 300 to 550 ° C.
  • the ALD window was defined as the point from the maximum deposition rate to the minimum point.
  • the material supply time and the purge time can be shortened, and the film formation temperature can be lowered. I understood.
  • a silicon film such as a silicon nitride film or a silicon oxide film can be formed on a semiconductor substrate or nanowire having a high aspect ratio structure, which is extremely thin and free of atomic defects.
  • the aminosilane compound according to the present invention is useful for an atomic deposition method in which a film is formed at a lower temperature and in a shorter time.

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Abstract

L'invention concerne un composé aminosilane pouvant se décomposer à basse température et un procédé de production de film contenant du silicium utilisant le composé aminosilane pouvant se décomposer à basse température, en tant que précurseur de silicium. Le composé fourni par la présente invention est utilisé dans la formation de film contenant du silicium, ce qui permet d'augmenter le taux de formation de film par une meilleure adsorption sur une surface de substrat pendant la formation de film, permettant ainsi au film d'être formé à une température inférieure en abaissant la température de décomposition.
PCT/JP2019/009187 2018-03-29 2019-03-07 Composé aminosilane, et composition pour formation de film contenant du silicium comprenant ledit composé aminosilane Ceased WO2019188103A1 (fr)

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CN114929937A (zh) * 2020-01-31 2022-08-19 Up化学株式会社 硅前体化合物、包含该硅前体化合物的用于形成含硅膜的组合物以及用于形成含硅膜的方法
CN116459545A (zh) * 2023-01-10 2023-07-21 贵州威顿晶磷电子材料股份有限公司 一种电子级二-异丙氨基-硅烷的制造装置及制造方法

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CN111883838B (zh) * 2020-08-03 2023-05-12 香河昆仑新能源材料股份有限公司 一种非水电解液及锂离子电池

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