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WO2019002029A1 - Résistance en feuille, capteur à feuille mince et utilisation de particules d'un deuxième matériau conducteur - Google Patents

Résistance en feuille, capteur à feuille mince et utilisation de particules d'un deuxième matériau conducteur Download PDF

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Publication number
WO2019002029A1
WO2019002029A1 PCT/EP2018/066281 EP2018066281W WO2019002029A1 WO 2019002029 A1 WO2019002029 A1 WO 2019002029A1 EP 2018066281 W EP2018066281 W EP 2018066281W WO 2019002029 A1 WO2019002029 A1 WO 2019002029A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive material
particles
sheet resistance
film sensor
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/066281
Other languages
German (de)
English (en)
Inventor
Bettina MILKE
Bernhard Ostrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
TDK Electronics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Electronics AG filed Critical TDK Electronics AG
Publication of WO2019002029A1 publication Critical patent/WO2019002029A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/26—Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0652—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component containing carbon or carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors

Definitions

  • the invention relates to the use of particles of a second conductive material for adjusting a thermal expansion coefficient of
  • Resistor material of sheet resistance is Resistor material of sheet resistance.
  • a sheet resistor may comprise a piezoresistive layer on which two electrodes are arranged. In a thin-film sensor, the sheet resistance becomes one
  • Carrier body can swing or can be bent relative to the substrate.
  • the sheet resistance should have a high sensitivity in order to enable a high measurement accuracy, for example in a pressure measurement.
  • the sensitivity can be given by the K-factor, also known as the Gage factor, which describes the relationship between relative
  • the sheet resistance should have a sensitivity of K> 2.
  • the sheet resistance is usually subjected to a cyclic bending stress. Therefore, the sheet resistance is required to be good
  • the sheet resistance should preferably be low
  • the layer sensor should also be suitable for use at high pressures of up to 1000 bar and at high temperatures of up to 250 ° C.
  • the object of the present invention is to specify an improved sheet resistance.
  • the sheet resistance should preferably be one or more of the above
  • Sheet resistance to be constructed so that
  • thermal expansion coefficient can be adjusted in a desired manner and adapted to the thermal expansion coefficient of a carrier body.
  • Resistor material comprising a matrix of a first conductive material in which particles of a second conductive material are dispersed, wherein the coefficient of thermal expansion of the resistance material is different from the thermal expansion coefficient of the first material, wherein the second conductive material
  • thermal expansion coefficient of the resistance material can be adjusted in the desired manner. Accordingly,
  • the thermal expansion coefficient of the resistance material differs from the thermal one
  • Expansion coefficients of the first material By the dispersion of the first conductive material and the second conductive material, a thermal expansion coefficient higher or lower than the thermal expansion coefficient of the first material may result for the resistance material. Accordingly, by the particles of the second conductive material of the thermal
  • Expansion coefficient of the resistance material to a material consisting only of the matrix of the first conductive material can be changed.
  • the thermal expansion coefficient of the sheet resistance can be adjusted very accurately by a concentration and / or a particle size of the particles of the second
  • the thermal expansion coefficient of the Sheet resistance can be varied. These parameters influence the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the thermal expansion coefficient of the Sheet resistance. Accordingly, by a suitable choice of the concentration and the particle size of the particles of the second conductive material, the
  • Expansion coefficient of the sheet resistance can be adjusted so that it corresponds to the coefficient of thermal expansion of a carrier body. Also the material of
  • Particles of the second conductive material may be the
  • the first conductive material is a material different from the second conductive material.
  • the first conductive material may be a piezoresistive material.
  • the particles of the second conductive material are dispersed in the first conductive material, the first conductive material and the second conductive material form a dispersion.
  • the two materials can accordingly form a heterogeneous mixture.
  • the particles of the second conductive material are dispersed in the first conductive material, the first conductive material and the second conductive material form a dispersion.
  • the two materials can accordingly form a heterogeneous mixture.
  • the particles of the second material may be finely dispersed in the first conductive material.
  • the particles of the second conductive material may be in the first
  • Material be arranged randomly.
  • the particles of the second conductive material may also be referred to as cluster particles.
  • introduced cluster particles in the matrix of the first conductive material may make it possible to set the thermal expansion coefficient exactly to a desired value and thus to the thermal
  • the thermal expansion coefficient of the sheet resistance can vary over its lifetime by less than 0.1 ⁇ 6.
  • particles of a second conductive material may be the construction of a
  • Allow sheet resistance which has a high K-factor and thus a high measuring sensitivity. Since the second material is conductive, the sensitivity does not become due to the introduction of the second material into the matrix
  • the K-factor of the resistance material may be greater than 2.
  • the resistance material can be a linear
  • Sheet resistance have a linear temperature dependence over a wide temperature range, for example between 50 K and 550 K.
  • the particles of the second conductive material may comprise a shell comprising graphitic carbon, Ag, Si or Sic.
  • the sheath may consist of one of these materials.
  • the shell can be the particle
  • the particles of the second conductive material may have a particle size between 5 nm and 50 nm. at
  • the diameter of the sphere indicates the particle size.
  • the distance of the two farthest points of the particle is assumed to be the particle size.
  • the matrix of the first conductive material may include at least one selected from amorphous carbon, a polymer,
  • the matrix of the first conductive material may be one of these
  • the first material may be an amorphous carbon matrix having Si and / or SiC moieties.
  • the Si and / or SiC components can the
  • the Young's modulus can be varied by introducing Si or SiC into the amorphous carbon matrix without changing the thermal expansion coefficient.
  • the resistance material can be a thermal
  • Carrier body of a thin film sensor can be used, for example yttrium-stabilized zirconium or stainless steel.
  • the particles of the second conductive material can be any suitable material.
  • the sheet resistance can by means of a sol-gel process in conjunction with a thermal treatment or by physical vapor deposition (PVD) or chemical vapor deposition
  • Thermal treatment can be a so-called
  • the present invention relates
  • Invention a thin-film sensor having the above-described sheet resistance.
  • the thin-film sensor may have a carrier body on which the sheet resistor is arranged, the carrier body and the sheet resistor having the same thermal
  • Sheet resistance and the support body can be considered equal if the thermal
  • Expansion coefficients differ by less than 0.2 ppm / K, preferably by less than 0.05 ppm / K. Due to the coordinated thermal expansion coefficients mechanical stresses between sheet resistance and support body can be avoided even with large temperature fluctuations. Thus, a long-term stability of the sheet resistance and a high measurement accuracy over the entire lifetime of the sheet resistance can be made possible.
  • a concentration and a particle size of the particles of the second conductive material may be selected such that the carrier body and the sheet resistor have the same thermal expansion coefficient.
  • the use of the second conductive provides Material a high design flexibility, which allows the adjustment of the thermal expansion coefficient
  • the carrier body may comprise stainless steel or yttrium-stabilized zirconium.
  • the carrier body may be a membrane and a substrate
  • the membrane in which the membrane is fixed in such a way that the membrane can move relative to the substrate, wherein the sheet resistance is arranged directly on the membrane.
  • the membrane and the substrate may be made of the same material.
  • the present invention relates
  • Expansion coefficient of a resistive material of a sheet resistance wherein the resistance material comprises a matrix of a first conductive material, in which the
  • the sheet resistance may, in particular, be the sheet resistance described above. Accordingly, all structural and functional features associated with the sheet resistance or the
  • Thin-film sensor have been disclosed, also apply to this aspect. Accordingly, the particles of the second conductive material can be used to heat the thermal
  • the coefficient of thermal expansion should be set to a value which deviates from the coefficient of thermal expansion of a carrier body by less than 0.2 ppm / K, preferably by less than 0.05 ppm / K.
  • the second conductive material may be a nitride of a
  • Transition metal selected from Ta, Zr, Cr, Ti, Ga, V, Mn, Mo and W, or a transition metal carbide selected from Ta, Zr, Cr, Ti, Ga, V, Mn, Mo and W.
  • the particles of the second conductive material may include a shell having graphitic carbon, Ag, Si or SiC.
  • the matrix of the first conductive material may include at least one selected from amorphous carbon, a polymer, A1P04, amorphous Si, and amorphous SiC.
  • FIG. 1 shows a sheet resistance
  • Figure 2 shows a thin-film sensor according to a first
  • Figure 3 shows a thin-film sensor according to a second
  • Figure 1 is a sectional view through a
  • Sheet resistance 2 which has a resistance material 3, which is arranged between two electrodes 4.
  • the sheet resistance serves to define a defined provide electrical resistance between the two electrodes 4.
  • the resistance material 3 is schematic and not
  • Resistive material 3 to illustrate.
  • Resistor material 3 has a matrix of a first
  • Material may be amorphous carbon, a polymer, AIPO4, amorphous Si or amorphous SiC.
  • particles 9 of a second conductive material are arranged.
  • the particles 9 are embedded in the first material 8.
  • the particles 9 are shown in spherical form. Also possible are ellipsoids, elongated particles or irregular particles.
  • the particles 9 comprise the second conductive material, which is a nitride of a transition metal or a carbide of a transition metal. It can do that
  • the particles 9 may further comprise an oxygen addition to the nitride of the transition metal or the carbide of the transition metal. Furthermore, the particles 9 have a shell 10 which contains the particles 9
  • the shell 10 may be made of graphite
  • FIG. 2 shows a thin-film sensor 1, which has a
  • Sheet resistance 2 with the resistance material 3 has.
  • the sheet resistor 2 also has two electrodes 4.
  • the electrodes 4 are at opposite ends of the
  • the thin-film sensor 1 has a carrier body 7.
  • the carrier body 7 has a membrane 5 and a substrate 6.
  • the membrane 5 is fixed to the substrate 6 such that the membrane 5 can move relative to the substrate 6.
  • the membrane 5 can oscillate relative to the substrate 6.
  • a central region of the membrane 5 can be bent.
  • the sheet resistance 2 is arranged on the membrane 5.
  • the resistance material 3 can be deposited directly on the membrane 5.
  • the sheet resistance 2 is arranged in the region of the membrane 5 which is movable relative to the substrate 6.
  • piezoelectric effect creates an electrical signal that can be detected by the electrodes 4.
  • the thin-film sensor 1 preferably has four layer resistors 2, which are connected to form an electrical resistance bridge.
  • the resistance bridge is preferably a Wheatstone bridge. Based on the electrical signals detected by these sheet resistors 2, a pressure applied to the thin-film sensor 1 can be calculated.
  • the thin-film sensor 1 described here is suitable not only for measuring a pressure but also for measuring forces and for measuring an expansion of the membrane 5.
  • the resistance material 3 is the material described above, which is a matrix of a first conductive material 8
  • Transition metal selected from Ta, Zr, Cr, Ti, Ga, V, Mn, Mo and W.
  • the membrane 5 and the substrate 6 may be stainless steel or
  • Sheet resistance 3 has a thermal
  • FIG. 3 shows a second exemplary embodiment of the invention
  • Thin-film sensor 1 in which the membrane 5 is attached to the substrate 6 on only one side. Accordingly, the diaphragm 5 can be bent relative to the substrate 6.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Force In General (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

La présente invention concerne une résistance en feuille (2) comprenant un matériau de résistance (3), présentant une matrice d'un premier matériau conducteur (8) dans laquelle les particules (9) d'un deuxième matériau conducteur sont dispersées, le deuxième matériau conducteur comprenant un nitrure d'un métal de transition choisi parmi Ta, Zr, Cr, Ti, Ga, V, Mn, Mo et W ou un carbure d'un métal de transition choisi parmi Ta, Zr, Cr, Ti, Ga, V, Mn, Mo et W. Selon un autre aspect, l'invention concerne un capteur à feuille mince (1) qui comprend la résistance en feuille (2). L'invention concerne en outre l'utilisation de particules (9) d'un deuxième matériau conducteur pour le réglage d'un coefficient de dilatation thermique du matériau de résistance de la résistance en feuille.
PCT/EP2018/066281 2017-06-27 2018-06-19 Résistance en feuille, capteur à feuille mince et utilisation de particules d'un deuxième matériau conducteur Ceased WO2019002029A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017114228.2 2017-06-27
DE102017114228.2A DE102017114228B4 (de) 2017-06-27 2017-06-27 Schichtwiderstand und Dünnfilmsensor

Publications (1)

Publication Number Publication Date
WO2019002029A1 true WO2019002029A1 (fr) 2019-01-03

Family

ID=62684817

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/066281 Ceased WO2019002029A1 (fr) 2017-06-27 2018-06-19 Résistance en feuille, capteur à feuille mince et utilisation de particules d'un deuxième matériau conducteur

Country Status (2)

Country Link
DE (1) DE102017114228B4 (fr)
WO (1) WO2019002029A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030161959A1 (en) * 2001-11-02 2003-08-28 Kodas Toivo T. Precursor compositions for the deposition of passive electronic features
US20050057867A1 (en) * 2002-04-08 2005-03-17 Harris Edwin James Direct application voltage variable material, devices employing same and methods of manufacturing such devices
WO2008030227A1 (fr) * 2006-09-07 2008-03-13 E. I. Du Pont De Nemours And Company Faible coefficient de résistivité thermique de résistors polymères à base de carbures et nitrures de métal
US20100301989A1 (en) * 2009-05-24 2010-12-02 Oem Group Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US20150179316A1 (en) * 2013-12-23 2015-06-25 Intermolecular Inc. Methods of forming nitrides at low substrate temperatures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3522427A1 (de) * 1985-06-22 1986-02-20 Helmut Dipl Ing Fischer Titanoxinitridschicht fuer sensoranwendungen
WO2009129930A1 (fr) * 2008-04-24 2009-10-29 Hochschule Für Technik Und Wirtschaft Des Saarlandes Résistance à couche, à coefficient de température constant et fabrication d'une telle résistance à couche
DE102009044980A1 (de) * 2009-09-24 2011-03-31 Robert Bosch Gmbh Verfahren zur Herstellung eines Sensorbauelementes ohne Passivierung sowie Sensorbauelement
DE102015006057B4 (de) * 2015-05-15 2024-10-24 CeLaGo Sensors GmbH Schichtwiderstand mit einem kohlenstoffhaltigen Widerstandsmaterial, Verfahren zu dessen Herstellung sowie Sensorelement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030161959A1 (en) * 2001-11-02 2003-08-28 Kodas Toivo T. Precursor compositions for the deposition of passive electronic features
US20050057867A1 (en) * 2002-04-08 2005-03-17 Harris Edwin James Direct application voltage variable material, devices employing same and methods of manufacturing such devices
WO2008030227A1 (fr) * 2006-09-07 2008-03-13 E. I. Du Pont De Nemours And Company Faible coefficient de résistivité thermique de résistors polymères à base de carbures et nitrures de métal
US20100301989A1 (en) * 2009-05-24 2010-12-02 Oem Group Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US20150179316A1 (en) * 2013-12-23 2015-06-25 Intermolecular Inc. Methods of forming nitrides at low substrate temperatures

Also Published As

Publication number Publication date
DE102017114228A1 (de) 2018-12-27
DE102017114228B4 (de) 2021-05-20

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