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WO2019071669A1 - 蒸镀用 uv 前处理设备 - Google Patents

蒸镀用 uv 前处理设备 Download PDF

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Publication number
WO2019071669A1
WO2019071669A1 PCT/CN2017/109106 CN2017109106W WO2019071669A1 WO 2019071669 A1 WO2019071669 A1 WO 2019071669A1 CN 2017109106 W CN2017109106 W CN 2017109106W WO 2019071669 A1 WO2019071669 A1 WO 2019071669A1
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WO
WIPO (PCT)
Prior art keywords
light shielding
curing chamber
light
vapor deposition
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/109106
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English (en)
French (fr)
Inventor
刘兆松
徐源竣
任章淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/735,207 priority Critical patent/US10446801B2/en
Publication of WO2019071669A1 publication Critical patent/WO2019071669A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Definitions

  • the present invention relates to the field of display panel manufacturing, and more particularly to a UV pretreatment apparatus for vapor deposition.
  • TFT Thin Film Transistor
  • UV ultraviolet light
  • the TFT is sensitive to UV treatment even if a light shielding layer is present in the TFT array substrate.
  • the electrical properties of the treated substrate will still vary greatly, but UV treatment is an indispensable pretreatment process for the vapor deposition section.
  • the TFT of the TFT array substrate is The device has an electrical influence, which in turn leads to a decrease in the quality of the TFT array substrate and affects the display effect of the display panel.
  • the invention provides a UV pretreatment device for vapor deposition, which can absorb ultraviolet light in a partial region, thereby avoiding ultraviolet light irradiation.
  • the TFT device of the TFT array substrate solves the technical problem that the ultraviolet light has an electrical influence on the TFT device of the TFT array substrate.
  • the invention provides a UV for vapor deposition
  • the pre-processing device includes: a housing having a curing chamber inside; a housing at one end of the housing, and a discharge opening at the opposite end of the housing; a light source disposed inside the curing chamber; wherein the inner wall of the curing chamber is provided with a light absorbing layer; according to a preferred embodiment of the invention, the UV The light source is disposed on a top surface of the curing chamber, and the light absorbing layer is disposed on a bottom surface and a periphery of the curing chamber.
  • a cavity is disposed in the curing chamber, and the base is disposed on a bottom surface of the curing chamber, and the base is placed on the base TFT array substrate.
  • the TFT array substrate includes:
  • a buffer layer is prepared on the surface of the glass substrate and covers the light shielding layer pattern
  • a TFT device disposed on a surface of the buffer layer and corresponding to the light shielding layer pattern
  • An insulating layer is prepared on the surface of the buffer layer and covers the TFT device;
  • the side of the TFT array substrate provided with the anode metal pattern is close to the UV light source.
  • a light shielding plate is disposed in the curing chamber, the light shielding plate is parallel to a bottom surface of the curing chamber, and four ends of the light shielding plate are correspondingly attached to the periphery of the curing chamber.
  • the light shielding plate includes a light shielding region and a light transmitting region located in the light shielding region, wherein a length of the first long side of the light transmitting region is equal to The length of the first long side of the TFT array substrate, and the length of the first short side of the light transmitting region is equal to the length of the first short side of the TFT array substrate.
  • the peripheral surface of the curing chamber is provided with a sliding slot
  • the sliding slot is perpendicular to the bottom surface of the curing chamber
  • the edge of the visor is provided with a fixing matching the sliding slot
  • the fixing member is slidably connected to the sliding slot.
  • the light shielding area of the light shielding plate is provided with the light absorbing layer.
  • the surface of the light shielding region of the light shielding plate is provided with an extension plate movable to the light transmission region.
  • one end of the extension plate is hinged to the edge of the light shielding area of the visor.
  • the light absorbing layer is prepared using carbon nanotubes.
  • the invention also provides a UV for vapor deposition
  • the pre-processing device includes: a housing having a curing chamber inside; a housing at one end of the housing, and a discharge opening at the opposite end of the housing; a light source disposed inside the curing chamber; wherein the inner wall of the curing chamber is provided with a light absorbing layer.
  • a cavity is disposed in the curing chamber, and the base is disposed on a bottom surface of the curing chamber, and a TFT array substrate is disposed on the base.
  • the TFT array substrate includes:
  • a buffer layer is prepared on the surface of the glass substrate and covers the light shielding layer pattern
  • a TFT device disposed on a surface of the buffer layer and corresponding to the light shielding layer pattern
  • An insulating layer is prepared on the surface of the buffer layer and covers the TFT device;
  • the side of the TFT array substrate provided with the anode metal pattern is close to the UV light source.
  • a light shielding plate is disposed in the curing chamber, the light shielding plate is parallel to a bottom surface of the curing chamber, and four ends of the light shielding plate are correspondingly attached to the periphery of the curing chamber.
  • the light shielding plate includes a light shielding region and a light transmitting region located in the light shielding region, wherein a length of the first long side of the light transmitting region is equal to The length of the first long side of the TFT array substrate, and the length of the first short side of the light transmitting region is equal to the length of the first short side of the TFT array substrate.
  • the peripheral surface of the curing chamber is provided with a sliding slot
  • the sliding slot is perpendicular to the bottom surface of the curing chamber
  • the edge of the visor is provided with a fixing matching the sliding slot
  • the fixing member is slidably connected to the sliding slot.
  • the light shielding area of the light shielding plate is provided with the light absorbing layer.
  • the surface of the light shielding region of the light shielding plate is provided with an extension plate movable to the light transmission region.
  • one end of the extension plate is hinged to the edge of the light shielding area of the visor.
  • the light absorbing layer is prepared using carbon nanotubes.
  • the invention has the beneficial effects that the UV pretreatment equipment for vapor deposition provided by the invention passes the UV for vapor deposition
  • a light absorbing layer is disposed on the inner wall of the pretreatment apparatus to absorb part of the UV light to prevent UV light from being reflected through the inner wall of the chamber to the TFT device of the TFT array substrate, so that the TFT device is protected from UV rays.
  • the light is irradiated to ensure that the electrical properties of the TFT device are not affected.
  • the UV processing of the TFT array substrate is performed in the prior art, the TFT device of the TFT array substrate is electrically affected, thereby causing The quality of the TFT array substrate is lowered, which affects the display effect of the display panel.
  • Fig. 1 is a schematic view showing the structure of a UV pretreatment apparatus for vapor deposition provided by the present invention.
  • the present invention is directed to a TFT of a TFT array substrate when the TFT array substrate is subjected to UV treatment in the prior art.
  • the device causes an electrical influence, which in turn leads to a decrease in the quality of the TFT array substrate and affects the display effect of the display panel; this embodiment can solve the defect.
  • the UV pretreatment apparatus for vapor deposition comprises: a housing 101, and the housing 101.
  • the inside has a curing chamber 102; one end of the housing 101 is provided with a feed port, and the other end of the housing 101 is provided with a discharge port; the TFT array substrate 100 to be UV processed
  • the TFT array substrate 100 is removed from the discharge port after the UV treatment, and the UV light source 103 is disposed in the curing chamber 102.
  • Internal wherein the inner wall of the curing chamber 102 is provided with a light absorbing layer.
  • the housing 101 is a metal housing; the curing chamber 102 includes a top surface, a bottom surface and four sides, the UV light source 103 is disposed on a top surface of the curing chamber 102, the TFT array substrate 100 is disposed on a bottom surface of the curing chamber 102, and the light absorption layer may be disposed only in the curing chamber 102.
  • the top surface of the curing chamber 102 is a metal surface, UV After the light is irradiated onto the transparent metal layer of the TFT array substrate 100, it is reflected to the top surface of the curing chamber 102, and the UV light is again reflected to the TFT through the top surface of the curing chamber 102.
  • the surface of the array substrate 100 serves to make full use of UV light.
  • the TFT array substrate 100 includes: a glass substrate 104; a light shielding layer pattern 105 formed on the glass substrate a buffer layer 106 is prepared on the surface of the glass substrate 104 and covers the light shielding layer pattern 105.
  • the TFT device 107 is disposed on the buffer layer 106.
  • an interlayer insulating layer 108 is formed on the surface of the buffer layer 106 and covers the TFT device 107; the passivation layer 109 Prepared on the surface of the interlayer insulating layer 108; a planarization layer 110 is prepared on the surface of the passivation layer 109; an anode metal pattern 111 is prepared on the surface of the planarization layer 110;
  • the TFT array substrate 100 is disposed with one side of the anode metal pattern 111 adjacent to the UV light source 103; thus, the TFT device of the TFT array substrate 100
  • the insulating layer 108, the passivation layer 109, and the planarization layer 110 are present between the UV light source 103 and the UV light source 103.
  • the protection of the multilayer film layer avoids UV rays.
  • a light transmissive film layer is irradiated onto the TFT device 107.
  • a light shielding plate is disposed in the curing chamber 102, the light shielding plate being parallel to the curing chamber 102 a bottom surface, the four ends of the light shielding plate are correspondingly applied to the peripheral surface of the curing chamber 102, the light shielding plate comprises a light shielding area and a light transmission area located in the light shielding area, wherein the light transmission area
  • the length of the first long side is equal to The length of the first long side of the TFT array substrate 100, the length of the first short side of the light transmitting region is equal to the length of the first short side of the TFT array substrate 100; in the curing chamber 102
  • a light shielding plate is added, and a size of the light transmitting region of the light shielding plate is equal to a size of the TFT array substrate 100 to ensure that the surface of the TFT array substrate 100 is normally irradiated with UV.
  • a light-shielding region of the light shielding plate is disposed in an area between an edge of the TFT array substrate 100 and a side surface of the curing chamber 102 to UV the peripheral region of the TFT array substrate 100 Light occlusion prevents UV light from being reflected by the side of the curing chamber 102 to the TFT device 107.
  • a sliding groove is formed in a peripheral surface of the curing chamber 102, and the sliding groove is perpendicular to the curing chamber 102.
  • a bottom surface, an edge of the visor is provided with a fixing member matching the sliding groove, and the fixing member is slidably coupled to the sliding groove; thus, the visor may be in the curing chamber 102 Moving vertically, the distance between the visor and the UV light source 103 can be adjusted by moving the visor. The closer the visor is to the UV light source 103, the UV light source The wider the radiation range of 103, the wider the size, so that it can be applied to the TFT array substrate 100 of different sizes.
  • the light shielding layer surface of the light shielding plate is provided with the light absorbing layer; the light absorbing layer disposed on the surface of the light shielding plate, and the curing chamber 102 is disposed
  • the inner light absorbing layer is prepared by using carbon nanotubes. It is found through experiments that the light absorbing layer prepared by using carbon nanotubes has an absorbance exceeding 90%.
  • the surface of the light shielding area of the light shielding plate is provided with an extension plate movable to the light transmission area; the surface of the extension plate is also provided with a light absorption layer; the extension plate is used for selectively increasing the light shielding area of the light shielding plate To adapt to the different sizes of the described TFT array substrate 100.
  • a card member is disposed on an inner edge of the visor, and the extension plate is locked in the card member, and a majority of the extension plate extends into the light transmission region to meet a small size.
  • UV of TFT array substrate deal with.
  • one end of the extension plate is hinged to the edge of the light shielding area of the light shielding plate; when it is required to increase the light shielding area of the light shielding plate, the extension plate is turned to the other side, so that the extension plate is turned to The light transmission zone.
  • the invention has the beneficial effects that the UV pretreatment equipment for vapor deposition provided by the invention passes the UV for vapor deposition
  • a light absorbing layer is disposed on the inner wall of the pretreatment apparatus to absorb part of the UV light to prevent UV light from being reflected through the inner wall of the chamber to the TFT device of the TFT array substrate, so that the TFT device is protected from UV rays.
  • the light is irradiated to ensure that the electrical properties of the TFT device are not affected.
  • the UV processing of the TFT array substrate is performed in the prior art, the TFT device of the TFT array substrate is electrically affected, thereby causing The quality of the TFT array substrate is lowered, which affects the display effect of the display panel.

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Abstract

本发明提供一种蒸镀用 UV 前处理设备，包括：壳体，所述壳体内部具有固化腔室；所述壳体的一端设置有进料口，所述壳体的相对另一端设置有出料口； UV光源，设置于所述固化腔室内部；其中，所述固化腔室内壁设置有吸光层。

Description

蒸镀用 UV 前处理设备 技术领域
本发明涉及显示面板制造领域，尤其涉及一种 蒸镀用 UV 前处理设备 。
背景技术
在显示面板制备工艺中，存在对 TFT （ Thin Film Transistor ，薄膜晶体管）阵列基板的透明金属部分进行 UV （紫外光）处理的工序，然而， TFT 对 UV 处理较为敏感，即使 TFT 阵列基板中存在遮光层，经过 UV 处理后的基板电性依然会发生较大变化 , 但 UV 处理是蒸镀段不可缺少的前处理工艺。
综上所述，现有技术对 TFT 阵列基板进行 UV 处理时，会对 TFT 阵列基板的 TFT 器件造成电性影响，进而导致 TFT 阵列基板的品质降低，影响显示面板的显示效果。
 技术问题
本发明提供一种 蒸镀用 UV 前处理设备， 能够吸收部分区域的 UV 光，进而避免 UV 光照射到 TFT 阵列基板的 TFT 器件，以解决 UV 光 对 TFT 阵列基板的 TFT 器件造成电性影响的技术问题 。
技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种蒸镀用 UV 前处理设备，包括：壳体，所述壳体内部具有固化腔室；所述壳体的一端设置有进料口，所述壳体的相对另一端设置有出料口； UV 光源，设置于所述固化腔室内部；其中，所述固化腔室内壁设置有吸光层；根据本发明一优选实施例，所述 UV 光源设置于所述固化腔室的顶面，所述吸光层设置于所述固化腔室的底面及四周。
根据本发明一优选实施例，所述固化腔室内设置有基台，所述基台设置于所述固化腔室的底面，所述基台上放置有 TFT 阵列基板。
根据本发明一优选实施例，所述 TFT 阵列基板包括：
玻璃基板；
遮光层图案，形成于所述玻璃基板表面；
缓冲层，制备于所述玻璃基板表面，且覆盖所述遮光层图案；
TFT 器件，设置于所述缓冲层表面，且与所述遮光层图案相对应；
间绝缘层，制备于所述缓冲层表面，且覆盖所述 TFT 器件；
钝化层，制备于所述间绝缘层表面；
平坦化层，制备于所述钝化层表面；
阳极金属图案，制备于所述平坦化层表面；
其中，所述 TFT 阵列基板设置有阳极金属图案的一侧靠近所述 UV 光源。
根据本发明一优选实施例，所述固化腔室内设置有遮光板，所述遮光板平行于所述固化腔室底面，所述遮光板的四个端部对应贴合所述固化腔室的四周表面，所述遮光板包括遮光区和位于所述遮光区内的透光区，其中，所述透光区的第一长边的长度等于所述 TFT 阵列基板的第一长边的长度，所述透光区的第一短边的长度等于所述 TFT 阵列基板的第一短边的长度。
根据本发明一优选实施例，所述固化腔室的四周表面开设有滑槽，所述滑槽垂直于所述固化腔室底面表面，所述遮光板的边缘设置有匹配所述滑槽的固定件，所述固定件滑移连接所述滑槽。
根据本发明一优选实施例，所述遮光板的遮光区表面设置有所述吸光层。
根据本发明一优选实施例，所述遮光板的遮光区表面设置有可移动至所述透光区的延长板。
根据本发明一优选实施例，所述延长板的一端铰接于所述遮光板的遮光区边缘。
根据本发明一优选实施例，所述吸光层采用碳纳米管制备。
本发明还提供一种蒸镀用 UV 前处理设备，包括：壳体，所述壳体内部具有固化腔室；所述壳体的一端设置有进料口，所述壳体的相对另一端设置有出料口； UV 光源，设置于所述固化腔室内部；其中，所述固化腔室内壁设置有吸光层。
根据本发明一优选实施例，所述固化腔室内设置有基台，所述基台设置于所述固化腔室的底面，所述基台上放置有 TFT 阵列基板。
根据本发明一优选实施例，所述 TFT 阵列基板包括：
玻璃基板；
遮光层图案，形成于所述玻璃基板表面；
缓冲层，制备于所述玻璃基板表面，且覆盖所述遮光层图案；
TFT 器件，设置于所述缓冲层表面，且与所述遮光层图案相对应；
间绝缘层，制备于所述缓冲层表面，且覆盖所述 TFT 器件；
钝化层，制备于所述间绝缘层表面；
平坦化层，制备于所述钝化层表面；
阳极金属图案，制备于所述平坦化层表面；
其中，所述 TFT 阵列基板设置有阳极金属图案的一侧靠近所述 UV 光源。
根据本发明一优选实施例，所述固化腔室内设置有遮光板，所述遮光板平行于所述固化腔室底面，所述遮光板的四个端部对应贴合所述固化腔室的四周表面，所述遮光板包括遮光区和位于所述遮光区内的透光区，其中，所述透光区的第一长边的长度等于所述 TFT 阵列基板的第一长边的长度，所述透光区的第一短边的长度等于所述 TFT 阵列基板的第一短边的长度。
根据本发明一优选实施例，所述固化腔室的四周表面开设有滑槽，所述滑槽垂直于所述固化腔室底面表面，所述遮光板的边缘设置有匹配所述滑槽的固定件，所述固定件滑移连接所述滑槽。
根据本发明一优选实施例，所述遮光板的遮光区表面设置有所述吸光层。
根据本发明一优选实施例，所述遮光板的遮光区表面设置有可移动至所述透光区的延长板。
根据本发明一优选实施例，所述延长板的一端铰接于所述遮光板的遮光区边缘。
根据本发明一优选实施例，所述吸光层采用碳纳米管制备。
 有益效果
本发明的有益效果为：本发明提供的蒸镀用 UV 前处理设备，通过在蒸镀用 UV 前处理设备的腔室内壁设置吸光层，以吸收部分 UV 光，避免 UV 光通过腔室内壁反射到 TFT 阵列基板的 TFT 器件上，使得 TFT 器件免受 UV 光照射，保证 TFT 器件的电性不被影响；解决了 现有技术对 TFT 阵列基板进行 UV 处理时，会对 TFT 阵列基板的 TFT 器件造成电性影响，进而导致 TFT 阵列基板的品质降低，影响显示面板的显示效果。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图 1 为 本发明提供的蒸镀用 UV 前处理设备结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如 [ 上 ] 、 [ 下 ] 、 [ 前 ] 、 [ 后 ] 、 [ 左 ] 、 [ 右 ] 、 [ 内 ] 、 [ 外 ] 、 [ 侧面 ] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对 现有技术对 TFT 阵列基板进行 UV 处理时，会对 TFT 阵列基板的 TFT 器件造成电性影响，进而导致 TFT 阵列基板的品质降低，影响显示面板的显示效果； 本实施例能够解决该缺陷 。
如图 1 所示，本发明提供的蒸镀用 UV 前处理设备，包括：壳体 101 ，所述壳体 101 内部具有固化腔室 102 ；所述壳体 101 的一端设置有进料口，所述壳体 101 的相对另一端设置有出料口；待 UV 处理的 TFT 阵列基板 100 从所述进料口送入，经过 UV 处理后，所述 TFT 阵列基板 100 从所述出料口移出； UV 光源 103 ，设置于所述固化腔室 102 内部；其中，所述固化腔室 102 内壁设置有吸光层。
所述壳体 101 为金属壳体；所述固化腔室 102 包括有顶面、底面和四个侧面，所述 UV 光源 103 设置于所述固化腔室 102 的顶面，所述 TFT 阵列基板 100 设置于所述固化腔室 102 的底面，所述吸光层可仅设置在所述固化腔室 102 的底面和四个侧面；从而避免 UV 光经过所述固化腔室 102 的侧面和底面反射至 TFT 器件 107 上；所述固化腔室 102 的顶面为金属面， UV 光照射至所述 TFT 阵列基板 100 的透明金属层后，反射至所述固化腔室 102 的顶面， UV 光再次经所述固化腔室 102 的顶面反射至所述 TFT 阵列基板 100 表面，起到对 UV 光的充分利用。
所述 TFT 阵列基板 100 包括：玻璃基板 104 ；遮光层图案 105 ，形成于所述玻璃基板 104 表面；缓冲层 106 ，制备于所述玻璃基板 104 表面，且覆盖所述遮光层图案 105 ； TFT 器件 107 ，设置于所述缓冲层 106 表面，且与所述遮光层图案 105 相对应；间绝缘层 108 ，制备于所述缓冲层 106 表面，且覆盖所述 TFT 器件 107 ；钝化层 109 ，制备于所述间绝缘层 108 表面；平坦化层 110 ，制备于所述钝化层 109 表面；阳极金属图案 111 ，制备于所述平坦化层 110 表面；其中，所述 TFT 阵列基板 100 设置有所述阳极金属图案 111 的一侧靠近所述 UV 光源 103 ；从而，所述 TFT 阵列基板 100 的所述 TFT 器件 107 与所述 UV 光源 103 之间存在所述间绝缘层 108 、所述钝化层 109 以及所述平坦化层 110 ，多层膜层的保护避免 UV 光穿透膜层照射到所述 TFT 器件 107 上。
所述固化腔室 102 内设置有遮光板，所述遮光板平行于所述固化腔室 102 底面，所述遮光板的四个端部对应贴合所述固化腔室 102 的四周表面，所述遮光板包括遮光区和位于所述遮光区内的透光区，其中，所述透光区的第一长边的长度等于所述 TFT 阵列基板 100 的第一长边的长度，所述透光区的第一短边的长度等于所述 TFT 阵列基板 100 的第一短边的长度；在所述固化腔室 102 内增设遮光板，所述遮光板的透光区域的尺寸与所述 TFT 阵列基板 100 的尺寸相当，以保证所述 TFT 阵列基板 100 表面都够正常照射到 UV 光；所述遮光板的遮光区置于所述 TFT 阵列基板 100 的边缘与所述固化腔室 102 的侧面之间的区域，以将所述 TFT 阵列基板 100 外围区域的 UV 光遮挡，避免 UV 光通过所述固化腔室 102 的侧面反射至所述 TFT 器件 107 。
所述固化腔室 102 的四周表面开设有滑槽，所述滑槽垂直于所述固化腔室 102 底面表面，所述遮光板的边缘设置有匹配所述滑槽的固定件，所述固定件滑移连接所述滑槽；从而，所述遮光板可在所述固化腔室 102 内垂直移动，通过移动所述遮光板，可调节所述遮光板与所述 UV 光源 103 之间的距离，所述遮光板距离所述 UV 光源 103 的距离越近，所述 UV 光源 103 的辐射范围越广，从而可适用于不同尺寸的所述 TFT 阵列基板 100 。
所述遮光板的遮光区表面设置有所述吸光层；设置于所述遮光板表面的吸光层，与设置于所述固化腔室 102 内侧的吸光层，均采用碳纳米管制备，经实验得出，采用碳纳米管制备的吸光层，吸光率超过 90% 。
所述遮光板的遮光区表面设置有可移动至所述透光区的延长板；所述延长板表面同样设置有吸光层；所述延长板用以选择性的增加所述遮光板的遮光面积，从而适配不同尺寸的所述 TFT 阵列基板 100 。
例如，在所述遮光板的内侧边缘设置卡件，将所述延长板卡设于所述卡件中，所述延长板的大部分区域伸入至所述透光区内，进而满足小尺寸 TFT 阵列基板的 UV 处理。
又如，所述延长板的一端铰接于所述遮光板的遮光区边缘；在需要增加所述遮光板的遮光面积时，将所述延长板翻转至另一侧，使得所述延长板转至所述透光区内。
本发明的有益效果为：本发明提供的蒸镀用 UV 前处理设备，通过在蒸镀用 UV 前处理设备的腔室内壁设置吸光层，以吸收部分 UV 光，避免 UV 光通过腔室内壁反射到 TFT 阵列基板的 TFT 器件上，使得 TFT 器件免受 UV 光照射，保证 TFT 器件的电性不被影响；解决了 现有技术对 TFT 阵列基板进行 UV 处理时，会对 TFT 阵列基板的 TFT 器件造成电性影响，进而导致 TFT 阵列基板的品质降低，影响显示面板的显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种蒸镀用 UV 前处理设备，其包括：壳体，所述壳体内部具有固化腔室；所述壳体的一端设置有进料口，所述壳体的相对另一端设置有出料口； UV 光源，设置于所述固化腔室内部；其中，所述固化腔室内壁设置有吸光层；所述 UV 光源设置于所述固化腔室的顶面，所述吸光层设置于所述固化腔室的底面及四周。
  2. 根据权利要求 1 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室内设置有基台，所述基台设置于所述固化腔室的底面，所述基台上承载有待 UV 处理的 TFT 阵列基板。
  3. 根据权利要求 2 所述的蒸镀用 UV 前处理设备，其中，所述 TFT 阵列基板包括：
    玻璃基板；
    遮光层图案，形成于所述玻璃基板表面；
    缓冲层，制备于所述玻璃基板表面，且覆盖所述遮光层图案；
    TFT 器件，设置于所述缓冲层表面，且与所述遮光层图案相对应；
    间绝缘层，制备于所述缓冲层表面，且覆盖所述 TFT 器件；
    钝化层，制备于所述间绝缘层表面；
    平坦化层，制备于所述钝化层表面；
    阳极金属图案，制备于所述平坦化层表面；
    其中，所述 TFT 阵列基板设置有阳极金属图案的一侧靠近所述 UV 光源。
  4. 根据权利要求 4 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室内设置有遮光板，所述遮光板平行于所述固化腔室底面，所述遮光板的四个端部对应贴合所述固化腔室的四周表面，所述遮光板包括遮光区和位于所述遮光区内的透光区，其中，所述透光区的第一长边的长度等于所述 TFT 阵列基板的第一长边的长度，所述透光区的第一短边的长度等于所述 TFT 阵列基板的第一短边的长度。
  5. 根据权利要求 4 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室的四周表面开设有滑槽，所述滑槽垂直于所述固化腔室底面表面，所述遮光板的边缘设置有匹配所述滑槽的固定件，所述固定件滑移连接所述滑槽。
  6. 根据权利要求 6 所述的蒸镀用 UV 前处理设备，其中，所述遮光板的遮光区表面设置有所述吸光层。
  7. 根据权利要求 6 所述的蒸镀用 UV 前处理设备，其中，所述遮光板的遮光区表面设置有可移动至所述透光区的延长板。
  8. 根据权利要求 7 所述的蒸镀用 UV 前处理设备，其中，所述延长板的一端铰接于所述遮光板的遮光区边缘。
  9. 根据权利要求 1 所述的蒸镀用 UV 前处理设备，其中，所述吸光层采用碳纳米管制备。
  10. 一种蒸镀用 UV 前处理设备，其包括：壳体，所述壳体内部具有固化腔室；所述壳体的一端设置有进料口，所述壳体的相对另一端设置有出料口； UV 光源，设置于所述固化腔室内部；其中，所述固化腔室内壁设置有吸光层。
  11. 根据权利要求 10 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室内设置有基台，所述基台设置于所述固化腔室的底面，所述基台上承载有待 UV 处理的 TFT 阵列基板。
  12. 根据权利要求 11 所述的蒸镀用 UV 前处理设备，其中，所述 TFT 阵列基板包括：
    玻璃基板；
    遮光层图案，形成于所述玻璃基板表面；
    缓冲层，制备于所述玻璃基板表面，且覆盖所述遮光层图案；
    TFT 器件，设置于所述缓冲层表面，且与所述遮光层图案相对应；
    间绝缘层，制备于所述缓冲层表面，且覆盖所述 TFT 器件；
    钝化层，制备于所述间绝缘层表面；
    平坦化层，制备于所述钝化层表面；
    阳极金属图案，制备于所述平坦化层表面；
    其中，所述 TFT 阵列基板设置有阳极金属图案的一侧靠近所述 UV 光源。
  13. 根据权利要求 11 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室内设置有遮光板，所述遮光板平行于所述固化腔室底面，所述遮光板的四个端部对应贴合所述固化腔室的四周表面，所述遮光板包括遮光区和位于所述遮光区内的透光区，其中，所述透光区的第一长边的长度等于所述 TFT 阵列基板的第一长边的长度，所述透光区的第一短边的长度等于所述 TFT 阵列基板的第一短边的长度。
  14. 根据权利要求 13 所述的蒸镀用 UV 前处理设备，其中，所述固化腔室的四周表面开设有滑槽，所述滑槽垂直于所述固化腔室底面表面，所述遮光板的边缘设置有匹配所述滑槽的固定件，所述固定件滑移连接所述滑槽。
  15. 根据权利要求 13 所述的蒸镀用 UV 前处理设备，其中，所述遮光板的遮光区表面设置有所述吸光层。
  16. 根据权利要求 13 所述的蒸镀用 UV 前处理设备，其中，所述遮光板的遮光区表面设置有可移动至所述透光区的延长板。
  17. 根据权利要求 16 所述的蒸镀用 UV 前处理设备，其中，所述延长板的一端铰接于所述遮光板的遮光区边缘。
  18. 根据权利要求 10 所述的蒸镀用 UV 前处理设备，其中，所述吸光层采用碳纳米管制备。
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