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WO2019064519A1 - Appareil de faisceau d'électrons, et procédé de fabrication de dispositif - Google Patents

Appareil de faisceau d'électrons, et procédé de fabrication de dispositif Download PDF

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Publication number
WO2019064519A1
WO2019064519A1 PCT/JP2017/035576 JP2017035576W WO2019064519A1 WO 2019064519 A1 WO2019064519 A1 WO 2019064519A1 JP 2017035576 W JP2017035576 W JP 2017035576W WO 2019064519 A1 WO2019064519 A1 WO 2019064519A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
optical
optical system
light
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/035576
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English (en)
Japanese (ja)
Inventor
真路 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to PCT/JP2017/035576 priority Critical patent/WO2019064519A1/fr
Priority to TW107134441A priority patent/TW201921411A/zh
Publication of WO2019064519A1 publication Critical patent/WO2019064519A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to an electron beam apparatus and a device manufacturing method, and in particular, uses an electron beam apparatus and an electron beam apparatus which irradiate light to a photoelectric element and irradiate an electron generated from the photoelectric element as an electron beam to a target. It relates to a device manufacturing method.
  • complementary lithography has been proposed in which an immersion exposure technique using an ArF light source and a charged particle beam exposure technique (for example, an electron beam exposure technique) are used complementarily.
  • a simple line and space pattern (hereinafter, appropriately abbreviated as an L / S pattern) is formed by utilizing double patterning or the like in immersion exposure using an ArF light source.
  • line patterns are cut or vias are formed through exposure using an electron beam.
  • an electron beam exposure apparatus provided with a multi-beam optical system that turns on and off a beam using a plurality of blanking apertures can be used (see, for example, Patent Document 1).
  • an apparatus using an electron beam has some points to be improved in terms of accuracy and the like.
  • an electron beam apparatus using a photoelectric element which generates electrons by irradiation of light which comprises: an optical optical system; and an irradiation of at least one light beam from the optical optical system.
  • An electron optical system which irradiates a target with electrons generated from a photoelectric element as an electron beam, a first frame in which a vacuum space in which an electron emission surface of the photoelectric element is disposed is formed, and at least one of the optical optical system
  • An electron beam apparatus is provided, comprising: a first support member supporting a portion; and a second frame supporting the first support member.
  • an electron beam apparatus using a photoelectric element generating electrons by light irradiation which is an optical device capable of providing a plurality of light beams, the optical device and the photoelectric element.
  • An optical optical system having a projection system positioned between the arrangement position, and electron optics for irradiating an electron generated from the photoelectric element by the irradiation of at least one light beam from the optical optical system as an electron beam to a target System, a first frame in which a vacuum space in which an electron emission surface of the photoelectric element is disposed is formed, a first support member for supporting the projection system, and a second support member for supporting the optical device
  • An electron beam apparatus is provided, comprising: a second frame supporting the second support member.
  • an electron beam apparatus using a photoelectric element that generates electrons by light irradiation, and an optical device capable of providing a plurality of light beams, and irradiating the optical device with illumination light.
  • Light optical system having an illumination system, a projection system positioned between the optical device and the arrangement position of the photoelectric element, and irradiation of at least one light beam from the An electron optical system for irradiating a target with generated electrons as an electron beam, a first frame in which a vacuum space in which an electron emission surface of the photoelectric element is disposed is formed, and a first support member for supporting the projection system
  • An electron beam apparatus comprising: a second support member supporting the illumination system; and a second frame supporting the second support member.
  • a device manufacturing method including a lithography step, wherein the lithography step includes forming a line and space pattern on a target, and the first to third aspects.
  • a device manufacturing method including: cutting a line pattern constituting the line and space pattern using an electron beam apparatus according to any of the above.
  • FIG. 1 schematically shows a configuration of an exposure apparatus according to a first embodiment. It is a figure which partially omits and shows a structure of the exposure apparatus of FIG. 1 which removed the body frame. It is a figure which shows the structure of the electron beam optical system seen from + X direction. It is a figure which expands and shows the photoelectric device shown by FIG.
  • FIG. 5A is a partially omitted longitudinal sectional view showing the photoelectric device
  • FIG. 5B is a plan view partially showing the photoelectric device.
  • FIG. 6 is a diagram for explaining the correction of the reduction ratio in the X-axis direction and the Y-axis direction by the first electrostatic lens.
  • FIG. 8A is a perspective view showing a light diffraction type light valve
  • FIG. 8B is a side view showing the light diffraction type light valve.
  • It is a top view which shows a pattern generator.
  • It is a figure for demonstrating the support structure of the light irradiation apparatus with which the exposure apparatus of FIG. 1 is equipped, and its structure each part.
  • FIG. 16 is a second diagram illustrating beam-aperture alignment
  • FIG. 17 is a diagram (part 3) for describing alignment between beam and aperture
  • FIG. 16 is a diagram (No. 4) for describing alignment between beam and aperture.
  • FIG. 21 is a diagram (No. 5) for describing alignment between beam and aperture;
  • FIG. 16 is a diagram (part 6) for describing alignment between beam and aperture;
  • a movable optical member including a pattern generator which constitutes a part of a light irradiation device, which is used to scan an aperture of a photoelectric element with a corresponding light beam, and an adjusting device which adjusts the position of the optical member FIG.
  • FIGS. 29A to 29C show a procedure for forming a cut pattern for cutting line patterns having different pitches by using the aperture integrated photoelectric device of FIG.
  • FIG. 30A is a view for explaining an example of the configuration of the separate aperture type photoelectric device
  • FIGS. 30B to 30E are views showing various configuration examples of the aperture plate.
  • 31 (A) and 31 (B) are diagrams for explaining the correction of the shape change (rounding of four corners) of the cut pattern caused by the blur caused by the optical system and the resist blur. It is a figure for describing one embodiment of a device manufacturing method.
  • FIG. 1 schematically shows the structure of an exposure apparatus 100 according to the first embodiment. Since the exposure apparatus 100 includes a plurality of electron beam optical systems (electron optical systems) as described later, hereinafter, the Z axis is parallel to the optical axis of the electron beam optical system and in a plane perpendicular to the Z axis
  • the scanning direction in which the wafer W is moved during exposure to be described later is taken as the Y-axis direction, the direction orthogonal to the Z-axis and Y-axis as the X-axis direction, and the rotation (tilting) direction about the X-axis, Y-axis and Z-axis
  • the description will be made as the ⁇ x, ⁇ y and ⁇ z directions, respectively.
  • the exposure apparatus 100 is disposed in a body frame 101 installed on a floor F of a clean room, a stage chamber 10 installed on a pedestal 101 a of the body frame 101, and an exposure chamber 12 inside the stage chamber 10.
  • a stage system 14 and an optical system 18 disposed above the stage system 14 are provided.
  • the optical system 18 comprises an electron beam optical unit 18A and an optical unit 18B disposed thereon.
  • the stage chamber 10 may be installed on the floor surface F.
  • the electron beam optical unit 18A includes a housing 19 as a main frame in which a first vacuum chamber 34 is formed.
  • a housing 19 as a main frame in which a first vacuum chamber 34 is formed. The specific configuration and the like of the optical system 18 will be described in detail later.
  • the body frame 101 is disposed on the upper surface of the pedestal 101a mounted on the floor surface F parallel to the XY plane, the upper frame 101b disposed a predetermined distance above the pedestal 101a, and the upper frame 101b. And a plurality of pillars 101c for connecting the pedestal 101a and the upper frame 101b while supporting the lower frame from the lower side. Although two pillars 101c are shown in FIG. 1, the body frame 101 is equipped with three or four pillars 101c.
  • FIG. 2 the configuration of the exposure apparatus 100 from which the body frame 101 is removed is partially omitted.
  • a vacuum pump (not shown) is shown as indicated by the white arrow in FIG. It is a vacuum chamber which can evacuate the inside by.
  • a vacuum pump a pump for vacuum supply may be used as a factory power.
  • the stage chamber 10 has a bottom wall 10a parallel to the XY plane disposed on the pedestal 101a of the body frame 101, a top wall (ceiling wall) 10b disposed a predetermined distance above the bottom wall 10a, and a bottom wall
  • the upper wall 10b is supported from below on 10a, and a peripheral wall 10c that defines the exposure chamber 12 together with the bottom wall 10a and the upper wall 10b is provided.
  • An opening 10d is formed in the upper wall 10b.
  • the lower end portion of the housing 19 of the electron beam optical unit 18A in which the plurality of electron beam optical systems 70 are accommodated is disposed.
  • the exposure apparatus 100 includes 45 electron beam optical systems 70 as an example.
  • the electron beam optical unit 18A has the above-described housing 19 internally including three spaces (referred to as a first space, a second space, and a third space in order from the top) arranged vertically. Is equipped.
  • the first space becomes the aforementioned first vacuum chamber 34 when vacuumed.
  • a frame member 192 having a protrusion projecting outward from the other portion is disposed between the second space and the third space.
  • the lower surface of the peripheral portion (protrusion) of the frame member 192 faces the upper surface of the upper wall 10a of the stage chamber 10, and the space between the lower surface of the frame member 192 and the upper surface of the upper wall 10b of the stage chamber 10 is shown in FIG. As shown in FIG.
  • the frame member 192 may not have a protrusion.
  • Other members constituting the housing 19 may have a lower surface facing the upper wall 10a.
  • the housing 19 is suspended and supported at three points from the upper frame 101b of the body frame 101 via a plurality of, for example, three suspension support mechanisms 600 provided with anti-vibration members (see FIG. 1).
  • the vibrations such as floor vibrations transmitted from the outside to the body frame 101
  • the natural frequency of the suspension support mechanism 600 is lower in the direction perpendicular to the optical axis than in the direction parallel to the optical axis of the electron beam optical system.
  • the three suspension support mechanisms 600 may vibrate like a pendulum in the direction perpendicular to the optical axis, vibration isolation performance in the direction perpendicular to the optical axis (floor vibration transmitted from the outside to the body frame 101)
  • the lengths of the three suspension support mechanisms 600 are set sufficiently long so that the ability to prevent the transmission of vibrations such as the above to the housing 19 (electron beam optical unit 18A) is sufficiently high. With this structure, high vibration isolation performance can be obtained, and at the same time, significant weight reduction of the mechanism portion is possible.
  • the relative position between the housing 19 (electron beam optical unit 18A) and the body frame 101 may change at a relatively low frequency.
  • a non-contact type positioning device 23 (not shown in FIG. 1, see FIG. 12) is provided. It is done.
  • the positioning device 23 can be configured to include a six-axis acceleration sensor and a six-axis actuator, as disclosed in, for example, WO 2007/077920.
  • the positioning device 23 is controlled by the main controller 110 (see FIG. 12).
  • relative positions of the housing 19 (electron beam optical unit 18A) with respect to the body frame 101 in the X axis direction, Y axis direction, Z axis direction, and relative rotation angles around the X axis, Y axis, and Z axis are It is maintained in a fixed state (predetermined state).
  • the housing 19 will be described in more detail later.
  • the positioning device 23 may not be provided.
  • the stage system 14 is supported by a weight plate 22 supported on the bottom wall 10a via a plurality of vibration isolation members 20, and supported by a weight cancellation device 24 on the surface plate 22, as shown in FIG.
  • the wafer stage WST is movable in the direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and can be finely moved in the remaining four degrees of freedom (Z-axis, ⁇ x, ⁇ y and ⁇ z directions)
  • the stage drive system 26 (only a part of which is shown in FIG. 2, see FIG. 12) which moves, and the position measurement system 28 (not shown in FIG. 2, FIG. 12) which measures positional information in the direction of 6 degrees of freedom of the wafer stage WST. See) and.
  • Wafer stage WST adsorbs and holds wafer W via an electrostatic chuck (not shown) provided on the upper surface thereof.
  • Wafer stage WST has a frame-shaped member with an XZ cross section, in which mover 30a of motor 30 having a yoke and a magnet (all not shown) is integrally fixed.
  • a stator 30b of a motor 30 formed of a coil unit extending in the Y-axis direction is inserted into the inside (hollow part) of the mover 30a.
  • the stator 30 b is connected to the X-stage 31 moving in the X-axis direction on the surface plate 22 at both ends in the longitudinal direction (Y-axis direction). As shown in FIG.
  • the X stage 31 has a pair of support portions with the X axis direction as the longitudinal direction and a predetermined distance in the Y axis direction, and the upper surface of the pair of support portions Both ends of the direction are fixed.
  • X stage 31 is integrated with wafer stage WST by an X stage drive system 32 (not shown in FIG. 2, see FIG. 12) constituted by a single-axis drive mechanism without magnetic flux leakage, for example, a feed screw mechanism using a ball screw. Is moved with a predetermined stroke in the X-axis direction.
  • the X stage drive system 32 may be configured by a uniaxial drive mechanism provided with an ultrasonic motor as a drive source. In any case, the influence of the magnetic field fluctuation due to the magnetic flux leakage on the positioning of the electron beam is negligible.
  • the motor 30 can move the mover 30a relative to the stator 30b in the Y-axis direction by a predetermined stroke, for example, 50 mm, and can finely move the mover 30a in the X-axis direction, the Z-axis direction, the ⁇ x direction, the ⁇ y direction, and the ⁇ z direction Closed magnetic field type and moving magnet type motor.
  • a wafer stage drive system that moves wafer stage WST in the direction of six degrees of freedom by motor 30 is configured.
  • the wafer stage drive system will be referred to as wafer stage drive system 30 using the same reference numerals as motor 30.
  • the X stage drive system 32 and the wafer stage drive system 30 move the wafer stage WST in the X axis direction and the Y axis direction with a predetermined stroke, for example, 50 mm, and the remaining four degrees of freedom (Z axis, ⁇ x,
  • the above-mentioned stage drive system 26 is configured to move slightly in the ⁇ y and ⁇ z directions).
  • the X stage drive system 32 and the wafer stage drive system 30 are controlled by the main controller 110 (see FIG. 12).
  • the weight cancellation device 24 includes a metal bellows type air spring (hereinafter abbreviated as air spring) 24a whose upper end is connected to the lower surface of the wafer stage WST, and a base slider 24b connected to the lower end of the air spring 24a. have.
  • the base slider 24b is provided with a bearing (not shown) for spouting the air inside the air spring 24a to the upper surface of the platen 22, and the bearing surface of the pressurized air ejected from the bearing and the upper surface of the platen 22.
  • the weight cancellation device 24, the wafer stage WST (including the mover 30a), and the own weight of the wafer W are supported by the static pressure (pressure in the gap) between them.
  • compressed air is supplied to the air spring 24 a through a pipe (not shown) connected to the wafer stage WST.
  • the base slider 24b is supported in a non-contact manner on the surface plate 22 via a kind of differential pumping type of static air bearing, and the air ejected from the bearing portion toward the surface plate 22 is exposed to the surrounding (exposure chamber 12) are prevented from leaking out.
  • a pair of pillars are provided sandwiching air spring 24a in the Y-axis direction, and a plate spring provided at the lower end of the pillar is connected to air spring 24a.
  • the electron beam optical unit 18A includes the aforementioned housing 19 in which the first vacuum chamber 34 and the like are provided, and the housing 19 is suspended from the upper frame 101b of the body frame 101 by the three suspension support mechanisms 600. It is supported.
  • the first vacuum chamber 34 is, as shown in FIG. 2, a first plate 36 constituting an uppermost wall (ceiling wall) of the housing 19, and a second plate disposed between the first space and the second space.
  • a plate (hereinafter referred to as a base plate) 38 and a side wall 40 connecting the lower surface of the first plate 36 and the upper surface of the base plate 38 are defined.
  • the first vacuum chamber 34 is independent of the exposure chamber 12 inside the above-mentioned stage chamber 10 by the vacuum pump 46A connected via the through hole 40a of the side wall 40 until the inside is in a high vacuum state. It is possible to evacuate (see open arrow in FIG. 2).
  • the holding member 52 is disposed with almost no gap.
  • FIG. 3 shows the internal configuration of the housing 19 corresponding to one of 45 electron beam optical systems 70 i provided in the electron beam optical unit 18A.
  • the holding member 52 since the member provided corresponding individually to the electron beam optical system 70 i 45 there are a large number, in the following, individually corresponding to the electron beam optical system 70 i 45 Subscript subscripts i are added as appropriate to each component provided.
  • the holding member 52 referred to as holding member 52 i.
  • the subscript i is appropriately added and described.
  • Holding member 52 i holding the partition member 81 i made of a light transmissive member such as quartz glass that serves as a vacuum partition wall.
  • the partition member 81 i as appropriate, also referred to as a vacuum partition wall 81 i.
  • the first plate 36 may hold the partition member 81 i.
  • the material of the light transmitting member constituting the partition member 81 is not limited to quartz glass, and any material having transparency to the wavelength of light used in the optical unit 18B may be used. Holding Below the member 52 i, the opening (notch) 88a (see FIG. 3) the holder 88 i which is formed is disposed.
  • the holder 88 i is fixed to the inner wall surface of the through hole 36 a of the first plate 36.
  • the holder 88 i holds a photoelectric device 54 described later. In the following, is held by the holder 88 i, or the photoelectric element 54 held by the holder 88 i, optionally with referred to as photoelectric elements 54 i, for also its constituent parts, as appropriate, the subscript It is written with a subscript i.
  • the holder 88 i has been fixed to the inner wall surface of the through hole 36a, it may be a holder 88 i provided on the lower surface of the first plate 36. Further, the photoelectric element 54 may not be held in the through hole 36a, and may be held below the through hole 36a, for example.
  • FIG. 4 shows the photoelectric device 54 shown in FIG. 3 in an enlarged manner.
  • the photoelectric device 54 has a substrate (also called reticle blanks) 56.
  • FIG. 4 corresponds to a longitudinal cross-sectional view taken along the central position in the depth direction (X-axis direction) of the photoelectric element 54.
  • the light shielding film 58 and the alkaline photoelectric layer 60 are laminated (formed) on a part of the central portion of the lower surface of the base material 56.
  • the photoelectric device 54 has a base 56 made of a light transmitting member such as quartz glass and the lower surface of the base 56.
  • a light shielding film (aperture film) 58 made of vapor-deposited chromium or the like, and a layer (alkali photoelectric conversion) of an alkaline photoelectric film (photoelectric conversion film) deposited (e.g. vapor deposited) on the lower surface side of the substrate 56 and the light shielding film 58 Layer (alkaline photoelectric layer) 60.
  • a large number of apertures (openings) 58a are formed.
  • the number of apertures 58a may be the same as the number of multi beams described later, or may be larger than the number of multi beams.
  • the alkaline photoelectric layer 60 is also disposed inside the aperture 58a, and the base 56 and the alkaline photoelectric layer 60 are in contact at the aperture 58a.
  • the base 56, the light shielding film 58, and the alkaline photoelectric layer 60 are integrally formed, and at least a part of the photoelectric element 54 is formed.
  • the material of the base 56 is not limited to quartz glass, and may be, for example, a material having transparency to the wavelength of light used in the optical unit 18B, such as sapphire.
  • the alkali photoelectric layer 60 is a multi-alkali photocathode using two or more types of alkali metals.
  • the multialkali photocathode is a photocathode characterized by high durability, capable of generating electrons with green light having a wavelength of 500 nm band, and high quantum efficiency QE of the photoelectric effect of about 10%.
  • a material having a high conversion efficiency of 10 [mA / W] is used.
  • the electron emission surface of the alkaline photoelectric layer 60 is the lower surface in FIG. 5A, that is, the surface on the opposite side to the upper surface of the base material 56.
  • the base plate 38 has a plurality of (45 in this embodiment) centers substantially on the optical axis AXe i of the electron beam optical system 70 i .
  • An opening 38a is formed.
  • Figure 3 is an electron beam optical system 70 i and is a diagram showing the components of the housing 19 corresponding individually to the electronic beam optics 70 i. Opening 38a, as can be seen from FIGS. 2 and 3, is opened and closed by a valve 39 i.
  • the 45 openings 38a (valves 39 i ) can be simultaneously opened and closed by the operation member 41 capable of reciprocating in the Y-axis direction shown in FIGS. 1 and 2.
  • the movement of the operation member 41 is performed by, for example, a pneumatic (or electromagnetic) first drive unit 46 under the main control device 110 (see FIG. 12).
  • the vacuum degree of the exposure chamber 12 inside the stage chamber 10 is measured by a vacuum gauge (pressure gauge for measuring a vacuum) 37, and the measurement value of the vacuum gauge 37 is supplied to the main controller 110 (see FIG. 12). .
  • the valve 39 i for opening and closing the opening 38a of 45 has been opened, on the basis of the measured values from the vacuum gauge 37, the degree of vacuum exposure chamber 12 is abnormal, or when it is detected
  • the main control device 110 controls the first drive unit 46 to move the operation member 41 in the -Y direction. By doing this, the 45 valves 39 i can be closed simultaneously.
  • each electron beam optical system 70 i of 45 on the optical axis ax i is the arrangement region of the plurality of apertures 58a formed in the light shielding film 58 of the photoelectric device 54 i which is held by the holder 88 i
  • the centers are almost identical.
  • the second space 47 of the housing 19 is, for example, a square frame connecting the base plate 38 constituting the upper wall, the frame member 192 constituting the bottom wall, and the base plate 38 and the frame member 192. It is partitioned by the side (or annular) side wall member 194. The second space 47 may not be divided by the side wall member 194. The side wall member 194 may not be provided to surround the second space 47.
  • the frame member 192 may be supported by the base plate 38 via the side wall member 194.
  • the first partial lens barrel 104a i and the electromagnetic lens 70a are supported in a suspended state on the lower surface of the base plate 38, but a spacer member is interposed between the frame member 192 and the first partial lens barrel 104a i It may be interposed and supported from below by the frame member 192.
  • the lens barrel 104 ai may be referred to as a housing 104 ai .
  • Tube 196 i Underside from reaching the upper surface of the frame member 192, for example, stainless steel base plate 38 is disposed.
  • Tube 196 i has its upper side and lower O-ring disposed respectively on the side 199a, via 199b, and is sandwiched between the base plate 38 and the frame member 192.
  • O-ring 199a if secured tightness in the tube 196 i using, for example, 199b, the tube 196 i can may be supported on the base plate 38, it may be supported on the frame member 192.
  • the tube 196 i may be referred to as a pipe 196 i.
  • the third space 48 of the housing 19 suspends the cooling plate 74 with respect to the frame member 192 that constitutes the upper wall, the cooling plate 74 that constitutes the bottom wall, and the frame member 192. It is divided by a cylindrical (for example, annular) peripheral wall member 198 fixed in a supported state.
  • a cylindrical (for example, annular) peripheral wall member 198 fixed in a supported state.
  • the second partial barrel 104b i holds an electromagnetic lens 70b (objective lens) therein.
  • the lens barrel 104b i may be called a housing 104 b i .
  • the second space 47 and the exposure chamber 12 are separated by the cooling plate 74, and the vacuum environment of the exposure chamber 12 can be maintained.
  • the cooling plate 74 has a function of cooling (or suppressing a temperature change) of an object disposed in the vicinity, but may not have the cooling function.
  • Pipe 202 i is a larger diameter than a part portion of the lower upper end, a lower end of the upper and the small diameter portion of the large diameter portion is open.
  • the pipe 202 i is held between the frame member 192 and the cool ring plate 74 via O-rings 199 c and 199 d respectively disposed on the upper end side and the lower end side.
  • the pipe 202 i may be supported by the frame member 192 or may be supported by the cooling plate 74 as long as the O-rings 199 c and 199 d can be used to ensure hermeticity in the pipe 202 i .
  • the pipe 202 i may be a member that does not have a small diameter portion and a large diameter portion, like the tube 196 i .
  • the pipe 202 i may be called a tube 202 i .
  • the electrostatic multipole 70 c is disposed inside the recess 193.
  • the electrostatic multipole 70 c is supported by the frame member 192.
  • a recess may be provided on the upper surface of the frame member 192 to arrange the electrostatic multipole 70c.
  • Frame member 192, air passage 197 to each other communicating through holes 192a i 45 is formed (see FIG. 2).
  • the air passage 197 interconnects the 45 recesses 193 and extends from the inside of the frame member 192 to the inside of the side wall member 194 and is connected to the vacuum pump 46B.
  • the air passage 197 may not be one.
  • a ventilation passage communicating the part mutually of the example 45 through holes 192a i in, provided with air passage for communicating the remainder with each other, may be respectively connected to a vacuum pump to separate.
  • the passage space e.g., the internal space of the tube 196 i interior space of the pipe 202 i
  • the passage space of the electron beam EB may be evacuated.
  • the air passage 197 may not be one.
  • a ventilation passage communicating the part mutually of the example 45 through holes 192a i in, provided with air passage for communicating the remainder with each other, may be respectively connected to a vacuum pump to separate.
  • a member in which a plurality of openings are formed is used as each of the first partial barrel 104a i and the second partial barrel 104b i .
  • a plurality of openings for passing the wiring 204 are formed in the side wall member 194 and the frame member 192 respectively, and the second space 47 and the third space 48 are formed through these openings. Is open to the surrounding space (atmospheric pressure space or a space slightly positive pressure than atmospheric pressure). Therefore, the electromagnetic lenses 70a and 70b and the wiring 204 are disposed in the atmospheric pressure space or in a space slightly positive pressure than the atmospheric pressure.
  • the second space 47 and the third space 48 may be vacuum spaces.
  • the electrostatic multipole 70c is by the photoelectric conversion by the photoelectric layer 60 by irradiating a plurality of beams LB on the photoelectric element 54 i ( It is arranged on the beam path of the electron beam EB).
  • the electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b.
  • the electrostatic multipole 70c is disposed at the beam waist on the beam path of the electron beam EB which is narrowed by the electromagnetic lenses 70a and 70b. For this reason, the plurality of beams EB passing through the electrostatic multipole 70c may repel each other by the coulomb force acting between them, and the magnification may change.
  • An electrostatic multipole 70 c having a second electrostatic lens 70 c 2 is provided inside the electron beam optical system 70.
  • each of the first electrostatic lens 70c 1 and the second electrostatic lens 70c 2 is, irradiation position control of the XY magnification correction and the electron beam (and the irradiation position shift correction) may be performed.
  • the electrostatic lens 70c 1 may be allowed to adjust the magnification of different axial and X-axis direction and the Y-axis direction.
  • an electrostatic multipole 70c may also have additional electrostatic lenses.
  • the second electrostatic lens 70c 2 corrects the irradiation position displacement of the beam due to various vibrations and the like (the projection position shift of the cut pattern to be described later) at once.
  • the second electrostatic lens 70c 2 is deflection control of the electron beam for performing the following control for the wafer W of the electron beam during exposure, i.e., it is also used for the irradiation position control of the electron beam.
  • the electrostatic multipole 70c is replaced with a static light capable of controlling the electron beam deflection.
  • An electrostatic deflection lens consisting of an electrostatic lens may be used.
  • Reduction magnification of the electron beam optical system 70 i in a state of not performing magnification correction a design example 1/50.
  • Other scaling factors such as 1/30 and 1/20 may be used.
  • the cooling plate 74 in an arrangement corresponding to the opening end of each of the lower ends of the plurality of pipes 202 i, the cooling plate 74, the recess 74a of a predetermined depth in the lower end surface is formed, within the recess 74a circular hole 74b which communicates with the open end of the pipe 202 i to the bottom surface is formed.
  • the open end of the pipe 202 i may be referred to as an electron beam exit of the electron beam optical system 70 i.
  • the hole 74 b may be called the exit of the electron beam EB.
  • the backscattered electron detection device 106 is disposed inside the recess 74 a.
  • Backscattered electron detector 106 on both sides of the Y-axis direction with respect to the optical axis AXe the electron beam optical system 70 i (coincident with the optical axis AXp of the projection system to be described later (see FIG. 7)), a pair of backscattered electron detector 106 y 1 , 106y 2 are provided. Although not shown in FIG. 3, a pair of backscattered electron detection devices 106 x 1 and 106 x 2 (see FIG. 12) are provided on both sides in the X axis direction with respect to the optical axis AXe.
  • the backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 are here attached to the cooling plate 74.
  • the backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 may be provided on the lower surface of the cooling plate 74 without providing the recess in the cooling plate 74.
  • Each of the two pairs of backscattered electron detection devices 106 is formed of, for example, a semiconductor detector, and detects and detects a reflected component generated from a detection target mark such as an alignment mark or a reference mark on a wafer.
  • a detection signal corresponding to the reflected electrons is sent to the signal processing unit 108 (see FIG. 12).
  • the signal processing unit 108 amplifies the detection signals of the plurality of backscattered electron detection units 106 by an amplifier (not shown) and then performs signal processing, and sends the processing result to the main control unit 110 (see FIG. 12).
  • the backscattered electron detection device 106 may or may not be provided only on a part (at least one) of the 45 electron beam optical systems 70 i .
  • the optical axis AXe of the electron beam optical system 70 i is should be drawn between the photoelectric element 54 i and the wafer W, in FIG. 3, extend from the convenience of illustration to above the vacuum bulkhead 81 i It is illustrated.
  • a passage inside the first vacuum chamber 34 inside the above-mentioned electron beam leading to the exposure chamber 12 from the first vacuum chamber 34 is fluidly It is separated or separated so that no flow of gas occurs between the first vacuum chamber 34 and the electron beam passage.
  • the degree of vacuum inside the first vacuum chamber 34 may be different from the degree of vacuum inside the passage of the electron beam reaching the exposure chamber 12 from the first vacuum chamber 34.
  • the first vacuum chamber 34 and the above-mentioned electron beam passage may be substantially one vacuum chamber without providing a valve or the like.
  • the electrons emitted from the photoelectric element 54 i which is held by the holder 88 i, extraction electrode 112 i for the provided acceleration are located at a predetermined distance in the Z axis direction, for example (in this embodiment three) ring-shaped with two or more of the electrode plate.
  • the extraction electrode 112 i is provided 45 individually corresponding to the electron beam optical system 70 of the 45 (see FIG. 2).
  • the extraction electrode 112 i is disposed below the holding position of the photoelectric element 54. As shown in FIG. 3 and the like, extraction electrode 112 i is located between the electron beam optical system 70 i and the photoelectric element 54 i.
  • the extraction electrode 112 may be supported by the first plate 36.
  • the optical unit 18B can also be called 45 light irradiation devices (light optical systems) provided corresponding to the 45 electron beam optical systems 70 i (photoelectric elements 54 i ), respectively.
  • the number of light irradiation devices 80 and the number of photoelectric elements 54 may not be equal. Therefore, the light irradiation device 80 may not necessarily correspond to the electron beam optical system 70 individually. For example, the number of light irradiation devices 80 may be larger than the number of photoelectric elements 54.
  • Light irradiation apparatus 80 i includes an illumination system 82 i, an optical device for generating a plurality of light beams with light from the illumination system 82 i (patterned light) (hereinafter, referred to as pattern generator) and 84 i, pattern generator a plurality of light beams from the 84 i, a projection system for irradiating the photoelectric element 54 i via the vacuum bulkhead 81 i (also referred to as the projection optical system) having 86 and i, the.
  • pattern generator patterned light
  • pattern generator a projection system for irradiating the photoelectric element 54 i via the vacuum bulkhead 81 i (also referred to as the projection optical system) having 86 and i, the.
  • Pattern generator 84 i the amplitude of the light traveling in a predetermined direction, at least one state of the phase and polarization may be referred to as a spatial light modulator for emitting spatially modulated.
  • Pattern generator 84 i can be said to be able to generate an optical pattern made of, for example, light and dark patterns.
  • the illumination system 82 i includes a light source 82a for generating illumination light (laser light) LB, the illumination light LB, a long rectangular cross section of the beam to one or more X-axis direction It has a shaping optical system 82b for forming a reflective optical element 98 such as a prism or mirror having a reflecting surface 98a to deflect light toward the pattern generator 84 i from shaping optical system 82b, a.
  • Light source 82a, shaping optical system 82b and a reflecting optical element 98 is held by a lens barrel 83 i via a support member, respectively.
  • the lens barrel 83 i may be referred to as a housing 83 i.
  • a laser diode which continuously oscillates a visible light or a wavelength near the visible light, for example, a laser beam (laser beam) having a wavelength of 405 nm is used.
  • a laser diode that intermittently emits (oscillates) laser light may be used as the light source 82a.
  • a combination of a laser diode and a switching element such as an AO deflector or an AOM (acousto-optic modulator) may be used in place of the light source 82a to intermittently emit laser light.
  • the illumination system 82 may not be provided with the light source 82a, and the light source may be provided outside the apparatus. In this case, illumination light from a light source outside the apparatus may be guided to the illumination system 82 using a light transmission member such as an optical fiber.
  • the shaping optical system 82b includes a plurality of optical elements (optical members) sequentially disposed on the light path of the laser beam (hereinafter, appropriately abbreviated as a beam) LB from the light source 82a.
  • the plurality of optical members can include, for example, a diffractive optical element (also referred to as DOE), a lens (for example, a focusing lens), a mirror, and the like.
  • the shaping optical system 82b includes, for example, a diffractive optical element located at the incident end
  • the beam LB is on the emission surface side of the diffractive optical element
  • In-plane intensity of the laser beam LB so as to have a large light intensity distribution in a plurality of rectangular regions (in the present embodiment, elongated slits) long in the X-axis direction aligned at predetermined intervals in the Y-axis direction on a predetermined surface. Transform the distribution.
  • the diffractive optical element generates a plurality of rectangular beams (slit-like beams) LB having a plurality of rectangular cross sections elongated in the X-axis direction aligned at predetermined intervals in the Y-axis direction by incidence of the beam LB from the light source 82a. . In the present embodiment, it generates a number of slit-shaped beam LB according to the configuration of the pattern generator 84 i.
  • the element for converting the in-plane intensity distribution of the laser beam LB is not limited to the diffractive optical element, and may be a refractive optical element or a reflective optical element, or may be a spatial light modulator.
  • the light beam incident on the reflective optical element 98 may not be a beam having a rectangular cross section (slit shape).
  • a reflective optical element 98 for bending the optical path is disposed.
  • the final lens 96 condenses a plurality of cross-sectional rectangular (slit-like) beams LB generated by the diffractive optical element in the Y-axis direction, and irradiates the reflective surface 98 a of the reflective optical element 98.
  • a condensing lens such as a cylindrical lens long in the X-axis direction can be used.
  • a reflective optical member such as a focusing mirror or a diffractive optical element may be used.
  • the reflecting surface 98a is not limited to a flat surface, and may have a shape having a curvature. When the reflective surface 98a has a curvature (having a finite focal length), the reflective surface 98a can also have the function of a condenser lens.
  • the reflective optical element 98, movable with respect to the optical axis AXi of the illumination system 82 i may be.
  • the reflecting surface 98a is disposed at a predetermined angle ⁇ ( ⁇ is, for example, +10 degrees) inclined with respect to the XY plane, and the plurality of irradiated slit-like beams are directed toward the pattern generator 84 in the upper left direction in FIG. reflect.
  • the shaping optical system 82 b and the reflective optical element 98 constitute an illumination optical system.
  • the reflective optical element 98 as shown in FIG. 7, is disposed inside the lens barrel 83 i described above is supported via the supporting member to the lower end of the lens barrel 83 i (holding).
  • Pattern generator 84 i is disposed on the optical path of the plurality of slit-shaped beam reflected by the reflecting surface 98a. Pattern generator 84 i is positioned a predetermined angle ⁇ inclined to the XY plane, the circuit both ends in the longitudinal direction through the barrel 83 i opening (not shown) is exposed to the outside of the lens barrel 83 i board It is attached to the surface on the -Z side of 102.
  • the circuit board 102 is formed with an opening which is a passage of the beam LB irradiated from the shaping optical system 82b to the reflection surface 98a.
  • a heat sink (not shown) for heat dissipation may be disposed opposite to the + Z side of the circuit board 102.
  • the heat sink is connected to the circuit board 102 via a plurality of connection members (not shown).
  • the heat sink may be fixed in contact with the surface opposite surface (the surface on the + Z side) to the barrel 83 i to the surface facing the circuit board 102.
  • a Peltier element may be used as the connection member. It is possible to cool the pattern generator 84 i and the circuit board 102 by heat radiation through the heat sink in any event.
  • symbol 103 shows wiring.
  • the pattern generator 84 i to position the reflective optical element 98 is disposed is arranged, may be disposed a reflecting optical element 98 in a position pattern generator 84 i is located.
  • the substrate 102 it may be directed to the projection system 86 i via 102 opening.
  • the pattern generator 84 i is constituted by a programmable spatial light modulator which is one type optical diffraction type light valve (GLV (registered trademark)).
  • the light diffraction type light valve is a minute structure of silicon nitride film called “ribbon” on a silicon substrate (chip) 84 a (hereinafter referred to as “ribbon”
  • ribbon It is a spatial light modulator in which a scale of several thousand is used to form a reference 84b.
  • the driving principle of GLV is as follows.
  • the GLV By electrically controlling the deflection of the ribbon 84b, the GLV functions as a programmable diffraction grating, and has high resolution, high speed (responsiveness 250 kHz to 1 MHz), high accuracy, dimming, modulation, and laser light Enable switching. GLVs are classified as micro-electro-mechanical systems (MEMS).
  • the ribbon 84 b is made of an amorphous silicon nitride film (Si 3 N 4 ) which is a kind of high temperature ceramic having strong characteristics in hardness, durability, and chemical stability. Each ribbon has a width of 2 to 4 ⁇ m and a length of 100 to 300 ⁇ m.
  • the ribbon 84b is covered with an aluminum thin film, and has the function of both a reflector and an electrode.
  • the ribbon 84b is stretched across the common electrode 84c, and when a control voltage is supplied to the ribbon 84b from a driver (not shown in FIGS. 8A and 8B), the substrate 84a is electrostatically directed. Flex When the control voltage is lost, the ribbon 84b returns to its original state due to the high tension inherent to the silicon nitride film. That is, the ribbon 84b is a kind of movable reflective element.
  • GLV GLV
  • an active ribbon whose position changes due to the application of voltage
  • a type where a bias ribbon falling to the ground and whose position is invariable alternates and a type in which all are active ribbons.
  • the latter type is used in the form.
  • the ribbon 84b is positioned on the -Z side, in a state where the silicon substrate 84a is positioned on the + Z side, the pattern generator 84 i consisting of GLV on the -Z side surface of the circuit board 102 is mounted.
  • the circuit board 102 is provided with a CMOS driver (not shown) for supplying a control voltage to the ribbon 84 b.
  • a CMOS driver is included and referred to as a pattern generator.
  • Pattern generator 84 i used in the present embodiment as shown in FIG. 9, for example a ribbon 84b of width 2 [mu] m, for example, a ribbon rows 85 having 6000 is a (direction of arrangement of the ribbon 84b) the longitudinal direction X As the axial direction, for example, 12 rows at predetermined intervals in a direction forming a predetermined angle ⁇ with respect to the XY plane (hereinafter referred to as an ⁇ -axis direction for convenience) are formed on the silicon substrate.
  • the ribbons 84b of each ribbon row 85 are stretched on the common electrode.
  • each ribbon 84 b is driven for switching (on / off) of the laser light by application and cancellation of application of a constant level voltage.
  • the GLV can adjust the diffracted light intensity according to the applied voltage
  • the applied voltage is finely adjusted when the intensity of at least a part of the plurality of beams from the pattern generator 84 i needs to be adjusted. Ru. For example, when the light of the same intensity in each ribbon is incident, it is possible to generate a plurality of light beams having different intensities from the pattern generator 84 i.
  • the beam of the 12 is a plurality of optical members constituting the shaping optical system 82b
  • the light is irradiated to the center of each ribbon row 85 as a slit-like beam LB long in the X-axis direction via the reflection surface 98 a of the reflection optical element 98.
  • the irradiation area of the beam LB to each ribbon 84b is a square area. The irradiation area of the beam LB to each ribbon 84b may not be a square area.
  • the 72000 beams generated by the pattern generator 84 i so as to allow irradiation individually, the light-shielding film 58 of the photoelectric device 54, 72000 pieces of apertures 58a are formed.
  • the number of apertures 58a may be the same as the number of pattern generators 84 i is capable of emitting beams (multi-beams), photoelectric comprising an aperture 58a corresponding respective 72000 beams (laser beams) A region on the element 54 (light shielding film 58) may be irradiated.
  • the number of movable reflective elements (ribbons 84b) included in the pattern generator 84 may be different from the number of apertures 58a.
  • the size of each of the plurality of apertures 58a on the photoelectric element 54 may be smaller than the size of the cross section of the corresponding beam.
  • the number of movable reflective elements (ribbons 84b) having a pattern generator 84 i may differ from the number of beams generated by the pattern generator 84 i.
  • a plurality of (two) movable reflective elements (ribbons) 1 The switching of a book beam may be performed. Further, it may be unequal to the number of the number of photoelectric elements 54 of the pattern generator 84 i.
  • Projection system 86 having a plurality of lenses which are sequentially arranged in the light beam of the light path from the pattern generator 84 i.
  • a plurality of lenses of the projection system 86 i is held in the lens barrel 87 i.
  • Projection magnification of the projection system 86 i is, for example, about 1/4.
  • the projection system is not limited to the refractive optical system, and may be a reflective optical system or a catadioptric optical system.
  • the projection magnification of the projection system 86 i is not limited to the reduction ratio of 1/4, for example, the reduction magnification of 1/5 or 1/10, or may be a magnification or enlargement magnification.
  • the axis of the optical axis AXi shaped optical system 82b that illumination system 82 i has the optical axis AXp of the projection system 86 i is parallel to the vertical directions (Z axis direction) However, they are slightly offset with respect to the Y-axis direction.
  • the projection system 86 i is, the light from the pattern generator 84 i, by projecting the photoelectric element 54 i via the vacuum bulkhead 81 i (or irradiation), a plurality, for example 72000 or apertures 58a
  • the photoelectric layer 60 is not irradiated with the light beam.
  • the aperture 58a is assumed to be a rectangle long in the X-axis direction unless otherwise specified. However, the aperture 58a may be a rectangle or square long in the Y-axis direction, or other polygons, ellipses, etc. It may be a shape.
  • the projection system 86 i, the optical characteristics of the projection system 86 i may be provided adjustable optical characteristic adjustment device 86Ad.
  • Optical characteristic adjustment device a part of the optical member in the present embodiment in the projection system 86 i, for example, a lens located on the incident end vicinity, by moving for example along the optical axis AXp, at least X-axis direction of the projection
  • the magnification can be changed.
  • the optical characteristic adjustment device for example, it may be used a device for changing the pressure of the airtight space formed between a plurality of lenses constituting the projection system 86 i.
  • the optical characteristic adjustment device may use apparatus providing heat distribution optical members constituting device, or a projection system 86 i deforming the optical members constituting the projection system 86 i.
  • the optical property adjusting device is provided for all of the light irradiation apparatus 80 i 45.
  • the optical property adjustment device 45 is controlled by the control unit 11 (see FIG. 12) based on an instruction of the main control device 110.
  • the optical characteristic adjustment device may be provided to only a part (one or two or more) of the plurality of light irradiation devices 80.
  • the internally generated in the pattern generator 84 i of the projection system 86 i may be a plurality of at least one intensity capable of changing the intensity modulation elements of the beam to be irradiated to the photoelectric layer 60 provided.
  • the changing of the intensities of the plurality of beams applied to the photoelectric layer 60 includes nulling the intensity of some of the plurality of beams.
  • provided with a plurality of beams of at least one may be a have a changeable phase modulating element a phase, capable of changing the polarization state the polarization modulation element projection system 86 i is irradiated to the photoelectric layer 60 Also good.
  • the optical axis of the shaping optical system 82b that illumination system 82 i has (coincident with the optical axis of the final lens 96 is the last optical element) AXi the projection system 86 i of the optical axis
  • AXp is parallel to the Z axis in all cases, the optical axis AXi and the optical axis AXp may be nonparallel. In other words, the optical axis AXi and the optical axis AXp may intersect at a predetermined angle. As is apparent from FIG.
  • optical axes of AXi and the projection system 86 i of the optical system illumination system 82 i has All AXp's are parallel to the Z-axis, but are offset (offset) by a predetermined distance in the Y-axis direction.
  • the illumination system 82 irradiates the pattern generator with light (beam) having a rectangular cross section long in the X-axis direction, so the offset amount in the Y-axis direction can be reduced.
  • the efficient light beam from the projection system 86 i incident side pattern generator without increasing the numerical aperture of the projection optical system 86 It can be incident on i . Therefore, even when using a plurality of electron beam optical systems, the illumination system and the projection system can be arranged efficiently.
  • the supporting member 17 is provided with hemispherical convex portions 21a at three places (only two of them are shown in FIG.
  • a triangular pyramid groove member 21b is provided which has a triangular pyramidal concave portion (groove portion) with which the three convex portions 21a respectively engage. And three protrusions 21a, by the three triangular pyramid groove member 21b of the three protrusions 21a are engaged, the projection system 86 i of the support members 17 and 45, always fixed alignment with the housing 19
  • the kinematic coupling is configured to allow mounting on the
  • casing 19 is not restricted to the above-mentioned kinematic coupling.
  • the lens barrel 83 i of the illumination system 82 i of the light irradiation device 80 i 45 comprises respectively, as shown in FIG. 10, the fine drive mechanism 13 i (see FIG. 7 which is provided at its lower end, simply drive through the well may) called mechanism, are held in a positional relationship corresponding to the lens barrel 87 i 45 in the support member 15. More specifically, in the supporting member 15, 45 through holes 15a are formed in a positional relationship corresponding to 45 through holes 17a, and a minute drive provided at the lower end of the lens barrel 83 inside each through hole 15a. The mechanism 13 i is inserted and fixed to the support member 15. Although each of the 45 micro drive mechanisms 13 i is shown in a simplified manner in FIG.
  • fine drive mechanism 13 i with respect to the support member 15, the corresponding barrel 83 i, X-axis, is movable in directions of three degrees of freedom of the Y-axis and [theta] z.
  • fine driving mechanism 13 i is a barrel 83 i, 2 degrees of freedom (X-axis direction, and the Y-axis direction) may be movable in, 5 degrees of freedom, or in directions of six degrees of freedom It may be movable.
  • the arrangement of the fine driving mechanism 13 i is not limited to the lower end of the lens barrel 83 i.
  • the support member 15 is supported by the support member 17 and the housing 19 so as not to be heavy.
  • the support member 15 is provided with a plurality of, for example, three suspension support mechanisms 602 having anti-vibration functions from the upper frame 101 b of the body frame 101 independently of the housing 19 in which the support member 17 is placed. It is suspended and supported at three points via (see Figure 1).
  • the space 45 of the light irradiation device 80 i of the optical unit 18B is disposed, atmospheric space or a slightly space positive pressure than the atmospheric pressure.
  • a support member 17 45 projection systems 86 i (lens barrels 87 i )) and a support member 15 (illumination systems 82 i and pattern generators 84 i (lens barrels 83 i ) of 45).
  • a relative position measurement system 29 capable of measuring relative position information in the XY plane (see FIG. 12).
  • the relative position measurement system 29 is configured by a pair of two-dimensional encoder systems 29a and 29b shown in FIGS.
  • a pair of scale members 33a and 33b are fixed in the vicinity of both ends in the Y-axis direction, and each of the scale members 33a and 33b is Heads 35 a and 35 b are fixed to the lower surface of the support member 15 so as to face each other.
  • reflection type two-dimensional diffraction gratings having a pitch of, for example, 1 ⁇ m are formed, each having a periodic direction in two directions intersecting in the XY plane, for example, an X-axis direction and a Y-axis direction.
  • the head 35a forms a two-dimensional encoder 29a that measures positional information of the support member 17 and the electron beam optical unit 18A in the X-axis direction and the Y-axis direction based on the detection center of the head 35a using the scale 33a.
  • the head 35b is a two-dimensional encoder that measures positional information of the support member 17 and the electron beam optical unit 18A in the X-axis direction and the Y-axis direction based on the detection center of the head 35b using the scale member 33b. Configure 29b.
  • the position information measured by the pair of two-dimensional encoders 29a and 29b is supplied to the main controller 110, and the main controller 110 supports the support member based on the position information measured by the pair of two-dimensional encoders 29a and 29b. 15, relative positions of the support member 17 and the electron beam optical unit 18A in the X axis direction, Y axis direction and ⁇ z direction, that is, the illumination system portion of the optical unit 18B, the projection system portion of the optical unit 18B and the electron beam optical unit
  • the relative position in the direction of 3 degrees of freedom (X, Y, ⁇ z) with 18A is determined.
  • relative position measurement capable of measuring relative position information in the XY plane of the illumination system portion of the optical unit 18B, the projection system portion of the optical unit 18B, and the electron beam optical unit 18A by the pair of two-dimensional encoders 29a and 29b.
  • a system 29 (see FIG. 12) is configured.
  • the encoder system of the relative position measurement system 29 may not be a two-dimensional encoder system.
  • the scale member of the encoder system may be disposed on the support member 15 and the head may be disposed on the support member 17.
  • the relative position measurement system 29 is not limited to the encoder system, and another measurement system such as an interferometer system may be used.
  • the position of the illumination system portion of the optical unit 18B in the XY plane with respect to the projection system portion of the optical unit 18B (and the electron beam optical unit 18A) is maintained at a predetermined position or set to a desired position,
  • a drive system 25 (not shown in FIGS. 2 and 10, see FIG. 12) provided with a three-axis actuator is provided.
  • Main controller 110 controls drive system 25 based on relative position information acquired by relative position measurement system 29.
  • the X-axis direction and Y-axis position of the illumination system portion of the optical unit 18B with respect to the projection system portion (and the electron beam optical unit 18A) of the optical unit 18B and the rotation angle around the Z axis are constant. It is maintained at (predetermined state) or adjusted to a desired state.
  • the X-axis direction on the light receiving surface of the pattern generator 84 i length Smm, alpha direction inside the beam of the rectangular region of length Tmm is irradiation, irradiated to the photoelectric element 54 i by the projection system 86 i which light from the pattern generator 84 i having a reduction ratio 1/4 by the irradiation, further the irradiation
  • the electron beam generated by the laser beam is irradiated to a rectangular area (exposure field) on the image plane (the wafer surface aligned with the image plane) through the electron beam optical system 70 i having a reduction ratio of 1/50. .
  • one electron beam exposure area optical system 70 i is responsible, since the rectangular region of maximum 43 mm ⁇ 43 mm, the movement stroke in the X-axis direction and the Y-axis direction of wafer stage WST as described above Is enough if it is 50 mm.
  • the number of electron-optical system 70 i is not limited to 45, the wafer diameter, the stroke of the wafer stage WST, can be determined based on such.
  • FIG. 12 is a block diagram showing the input / output relationship of the main controller 110 that mainly constitutes the control system of the exposure apparatus 100.
  • Main controller 110 includes a microcomputer and the like, and centrally controls the components of exposure apparatus 100 including the components shown in FIG. 12, the multi-beam optical system 200 the light irradiation device 80 1 which is connected to the control unit 11 of 1, based on instructions from main controller 110, a light source (laser diode) 82a that is controlled by the control unit 11, It includes a diffractive optical element, an optical characteristic adjustment device, and the like.
  • main control device 110 can generate halftones using the pattern generator 84 itself. Therefore, main controller 110 corresponds to the in-plane illuminance distribution on the electron emission surface of photoelectric layer 60 by adjusting the intensity of each light beam irradiated to photoelectric layer 60 at the time of exposure described later. It is possible to adjust the illuminance distribution in the exposure field on the wafer surface, that is, to control the dose.
  • the intensities of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion is substantially the same, adjustment of the intensity of the light beams irradiated to the photoelectric layer 60 are generated by the pattern generator 84 i is carried out. Adjustment of the intensity of the light beam may be performed by the illumination system 82 i, may be performed by pattern generator 84 i, may be performed in the projection system 86 i.
  • the beam intensity (the illuminance of the electron beam, the beam current amount) of at least a part of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion may be different from the other electron beam intensities.
  • the intensity of a plurality of light beams irradiated to the photoelectric layer 60 may be adjusted.
  • the exposure apparatus 100 is used, for example, in complementary lithography.
  • a wafer on which a line and space pattern (L / S pattern) is formed is subjected to exposure by using double patterning or the like in immersion exposure using an ArF light source, and the line pattern is cut. It is used to form a cut pattern.
  • the exposure apparatus 100 it is possible to form a cut pattern corresponding to each of 72000 apertures 58a formed in the light shielding film 58 of the photoelectric element 54.
  • the alignment of the aperture 58a corresponding to each of the plurality of light beams (multi-beams) LB generated by the pattern generator 84 i (Referred to as beam-aperture alignment) is important.
  • the plurality of light beams from the pattern generator 84 i is susceptible irradiated to the photoelectric element 54 i via the projection system 86 i, shown in Figure 13, the beam This is because the arrangement of the LBs and the arrangement of the apertures 58a may be largely deviated.
  • a Faraday cup table 149 electron beam optical system 70 i of the Faraday cup 143 in 45 in a positional relationship corresponding to the arrangement of the optical axis AXe 45 are arranged are mounted on wafer stage WST.
  • the Faraday cup has a collection electrode made of cup-shaped metal on which electrons (electron beams) are incident, and an ammeter connected to the collection electrode is designed to generate a current flowing from the collection electrode. It is a measuring instrument for measuring the number of electrons per unit time (corresponding to the beam current of the electron beam) incident on the collection electrode.
  • main controller stage drive system 26 by 110 is controlled, the Faraday cup 143 of the electron beam 45 to the exit end of the optical system 70 i of 45 at a position facing each wafer stage WST is positioned.
  • alignment between the plurality of (multiple) light beams LB and the corresponding apertures 58a is performed as follows.
  • the main controller 110 among the plurality of apertures 58a, in the arrangement area (X-axis direction of a large number of apertures 58a formed in the light shielding film 58 of the photoelectric element 54 i
  • a predetermined number for example, four apertures 58a 1 , 58a 2 , 58a 3 , 58a 4 located at one corner of the long rectangular arrangement area) are scanned with corresponding light beams LB 1 , LB 2 , LB 3 , LB 4 Do.
  • the illumination system 82 i and the pattern generator 84 i (only the light beams LB 1 , LB 2 , LB 3 and LB 4 are irradiated to the photoelectric element 54 i using the minute drive mechanism 13 i This is done by moving the lens barrel 83 i ) with respect to the support member 15 in the XY plane. For example to move the lens barrel 83 i in a zigzag shape as shown in FIG. 15.
  • the main controller 110 sums the currents from all of the Faraday cups 143 on the Faraday cup table 149 (from the Faraday cup table 149 Monitor the total current of the Then, main controller 110 causes the current value obtained by scanning of light beams LB 1 , LB 2 , LB 3 and LB 4 to be substantially maximum, within the XY plane of lens barrel 83 i by minute drive mechanism 13 i .
  • the first drive range (X min 1 ⁇ X ⁇ X max 1, Y min 1 ⁇ Y ⁇ Y max 1, ⁇ z min 1 ⁇ ⁇ z ⁇ ⁇ z max 1) is at any position within that range. , 3 degrees of freedom (X-axis direction, Y axis direction and the ⁇ z direction) of the illumination system 82 i, and a pattern generator 84 i using a micro-driving mechanism 13 i when setting the position of, as shown in FIG.
  • the main controller 110 among the plurality of apertures 58a, positioned on another corner portion of the rectangular arrangement region of a large number of apertures on the photoelectric element 54 i given
  • a number for example four apertures 58a 5 , 58a 6 , 58a 7 , 58a 8 are scanned with corresponding light beams LB 5 , LB 6 , LB 7 , LB 8 .
  • This scanning in a state in which only the light beam LB 5, LB 6, LB 7 , LB 8 is irradiated on the photoelectric element 54 i, using the micro-driving mechanism 13 i, to the support member 15 the barrel 83 i It is done by moving in the XY plane.
  • the main controller 110 monitors the total current from the Faraday cup table 149.
  • the main control unit 110 the light beam LB 5, current value obtained by the scanning of LB 6, LB 7, LB 8 becomes almost maximum, 3 degrees of freedom (X-axis in the XY plane of the lens barrel 83 i
  • the second drive range (X min 2 ⁇ X ⁇ X max 2, Y min 2 ⁇ Y ⁇ Y max 2, ⁇ z min 2 ⁇ ⁇ z ⁇ ⁇ z max 2) in the direction, Y axis direction and ⁇ z direction is detected ( Ask).
  • the second drive range (X min 2 ⁇ X ⁇ X max 2, Y min 2 ⁇ Y ⁇ Y max 2, ⁇ z min 2 ⁇ ⁇ z ⁇ ⁇ z max 2) is at any position within that range. , 3 degrees of freedom (X-axis direction, Y axis direction and the ⁇ z direction) of the illumination system 82 i, and a pattern generator 84 i using a micro-driving mechanism 13 i when setting the position of, as shown in FIG.
  • corresponding four light beams may be used to scan the corresponding apertures in the same manner as described above.
  • a different method is adopted.
  • main controller 110 calculates the common range of the detected first drive range and second drive range, and uses micro drive mechanism 13 i at any position within the calculated common range.
  • 3 degrees of freedom of the illumination system 82 i, and a pattern generator 84 i Te sets the position of, (72000 pieces of apertures 58a in this embodiment) every number of apertures 58a Are simultaneously irradiated with the corresponding light beam LB.
  • the corresponding light beam LB is irradiated to each of the multiple apertures 58a.
  • the main controller 110 is a Faraday cup in a state where the light beams LB corresponding to all the multiple apertures 58a are simultaneously irradiated. while monitoring the total current from the table 149, in Figure 19, as indicated by the three directions of the arrow, the lens barrel 83 i finely drives with small drive mechanism 13, is obtained during the minute-drive The final drive position of the micro drive mechanism 13 at which the current value is truly maximum is searched. As a result, as shown in FIG. 20, the arrangement of the apertures 58a exactly matches the arrangement of the beams LB, and the beam-aperture alignment is completed.
  • the final check of the intensity of the beam may be performed by the main controller 110 for each predetermined area.
  • the intensity of the electron beam may be checked for each aperture 58a.
  • the beam used Faraday cup table - processing of the aperture between the alignment may be performed sequentially in a multi-beam optical system 200 i of 45, may be performed simultaneously several, or on all of the multi-beam optical system 200 i .
  • the flow of processing on a wafer in the present embodiment is as follows.
  • the wafer W before exposure to which the electron beam resist has been applied is placed on the wafer stage WST in the stage chamber 10 and is attracted by the electrostatic chuck.
  • each electron beam optical system 70 i For at least one alignment mark formed on a scribe line (street line) corresponding to each of, for example, 45 shot areas formed on wafer W on wafer stage WST, each electron beam optical system 70 i The electron beam is irradiated, and the backscattered electrons from at least one alignment mark are detected by at least one of backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 , and all points alignment measurement of wafer W 1 is performed. Based on the result of the all-point alignment measurement, exposure using the 45 exposure units 500 i (multi-beam optical system 200 i ) is started on a plurality of shot areas on the wafer W 1 .
  • each multi-beam optical system 200 uses a plurality of beams (electron beams) emitted from each multi-beam optical system 200, cut patterns for L / S patterns formed on the wafer W and having the X-axis direction as the periodic direction.
  • the irradiation timing (on / off) of each beam is controlled while scanning the wafer W (wafer stage WST) in the Y-axis direction.
  • alignment marks formed corresponding to a part of the shot areas of the wafer W may be detected without performing the all-point alignment measurement, and 45 shot areas may be exposed based on the detection result. .
  • the number of exposure units 500i and the number of shot areas are the same, but may be different.
  • the number of exposure units 500 i may be less than the number of shot areas.
  • the alignment mark may be detected outside the stage chamber 10. In this case, it is not necessary to detect the alignment mark in the stage chamber 10.
  • the exposure sequence using the pattern generator 84 i be described.
  • the pixel areas of a large number of 10 nm square here, it is assumed to coincide with the irradiation area of the beam through the aperture 58a
  • the pixel areas of a large number of 10 nm square here, it is assumed to coincide with the irradiation area of the beam through the aperture 58a
  • the pixel areas of a large number of 10 nm square here, it is assumed to coincide with the irradiation area of the beam through the aperture 58a
  • XY two-dimensional manner adjacent to each other in an area on the wafer The case of setting and exposing all the pixels will be described.
  • the exposure using the ribbon row A is started on a continuous 6000-pixel region of a certain row (referred to as a K-th row) aligned in the X-axis direction on the wafer.
  • a K-th row a continuous 6000-pixel region of a certain row aligned in the X-axis direction on the wafer.
  • the beam reflected by the ribbon row A is at the home position.
  • the exposure to the same 6000 pixel region is continued while deflecting the beam in the + Y direction (or -Y direction) by making the scan of the wafer W in the + Y direction (or -Y direction) from the start of exposure follow.
  • wafer stage WST advances at a velocity V [nm / s], for example Ta x V [nm].
  • V [nm / s] for example Ta x V [nm].
  • Ta ⁇ V 96 [nm].
  • the beam is returned to the home position while the wafer stage WST scans at 24 nm in the + Y direction at a velocity V. At this time, the beam is turned off so that the resist on the wafer is not actually exposed.
  • the continuous 6000 pixel area on the (K + 12) th row has the same position as the 6000 pixel area on the Kth row at the start of exposure. It is in.
  • the continuous (6000 K) pixel region on the (K + 12) th row is exposed while deflecting the beam to the wafer stage WST.
  • the exposure apparatus 100 is used for complementary lithography, the formed e.g. X-axis direction on the wafer W so used to form the cutting pattern for the L / S pattern of periodic direction, a pattern generator 84 i 72000 Of the ribbons 84b, the beam reflected by any ribbon 84b can be turned on to form a cut pattern. In this case, 72000 beams may or may not be simultaneously turned on.
  • the shape that is, the shape of the irradiation region of the electron beam on the wafer is The shape is set to a long shape in the X-axis direction, for example, a rectangular shape long in the X-axis direction, like the aperture 85a.
  • the beam-aperture alignment described above is performed prior to the start of exposure, and main scanning device 110 measures the position during scanning exposure on wafer W based on the exposure sequence described above based on the measurement values of the system 28, together with the stage drive system 26 is controlled, the exposure unit 500 i light irradiation device 80 i and the electron beam optical system 70 i via the control unit 11 of is controlled. At this time, based on an instruction from the main control device 110, the control unit 11 performs the above-described dose control and the like as necessary.
  • the exposure apparatus 100 includes the illumination system 82 i (including the light source 82 a, the shaping optical system 82 b, and the reflective optical element 98) and the illumination light (laser beam) from the illumination system 82 i.
  • the plurality of light irradiators 80 i each having a pattern generator 84 i generating a plurality of light beams by LB, and a projection system 86 i irradiating a plurality of light beams from the pattern generator 84 i to the photoelectric element 54 i , first with a plurality of the illumination system 82 i, and a pattern generator 84 i, and a support member 15 for supporting the lens barrel 83 i to hold the illumination system 82 i, and a pattern generator 84 i of the plurality in a predetermined positional relationship a partial optical system, a plurality of the plurality of projection system 86 i of the light irradiation apparatus 80 i, the corresponding positions a plurality of projection system 86 i and a plurality of the illumination system 82 i
  • a support member 17 for supporting in engagement is equipped with a support member 17, the first vacuum quality 34 in which a plurality of photoelectric elements 54 i arranged in a positional relationship
  • the adjusting device by adjusting the position of the first partial optical system relative to the second partial optical system, the positional relationship between the illumination system 82 i and the projection system 86 i in each of the plurality of light irradiating devices 80 i Can be maintained at a constant state or can be set to a desired state.
  • the electron beam optical system 70 i of the exposure apparatus 100 inside a magnetic lens 70a, partial tube 104a i for holding 70b, respectively, to 104b i, electromagnetic lenses 70a, 70b are arranged
  • the space to be stored is open to the outside of the housing 19.
  • partial tube 104a i, in the center of 104b i, electromagnetic lenses 70a, 70b are isolated from the space to be arranged, in the open state of the valve 39 i, electron beam EB from the first vacuum chamber 34
  • a passage is formed to pass through.
  • the electron beam passage includes a tube 196 i whose one end (upper end) is connected to the base plate 38 which defines the first vacuum chamber (the first space of the housing 19) and the third space 48 of the housing 19.
  • the space in which the electromagnetic lenses 70a and 70b are disposed is not limited to the atmospheric pressure space, and may be a space having a vacuum degree lower than that of the electron beam passage.
  • the stage chamber 10 may be opened instead of opening the space where the electromagnetic lenses 70a and 70b are disposed. It may be in communication with the inside of the
  • the frame member 192 connects the electron beam optical system 70 i stepped through holes 192a i of 45 points defining the path of each electron beam 45 mutually
  • An air passage 197 connected to the vacuum pump 46 B is formed through the internal space of the side wall member 194 that divides the second space 47 of the housing 19. Therefore, in exposure apparatus 100, in the closed state of the valve 39 i, by driving the vacuum pump 46B, the passage of the electron beam EB, be evacuated independently of the first vacuum chamber 34 Can. For example, by driving the vacuum pump 46A and the vacuum pump 46B in parallel, the internal space of the first vacuum chamber 34 and the internal space of the electron beam passage can be made shorter by one pump. It is possible to evacuate both spaces in time.
  • At least a part of the electron beam optical system 70 i is supported by the member having the air passage 197, so a plurality of (45 in the present embodiment) electron beam optical systems 70 i Can be juxtaposed in a relatively small space.
  • the illumination system 82 i and the pattern generator 84 i can be driven by the drive mechanism 13 i in the directions of three degrees of freedom (X-axis, Y-axis and ⁇ z directions) with respect to the projection system 86 i in the XY plane.
  • the fine driving mechanism 13 i generated by a plurality of apertures 58a of the photoelectric elements 54 i and the pattern generator 84 i, it is possible to adjust the relative positions of the plurality of light beams irradiated to the photoelectric element 54 i. That is, contain fine driving mechanism 13 i, the relative positions of the plurality of apertures 58a and a plurality of light beams of the photoelectric device 54 i is adjustable adjustment device is constituted.
  • the main control unit 110 For adjusting the relative positions of the plurality of apertures and a plurality of light beams, the main control unit 110 is measured by the Faraday cup 143 to monitor the electron beam EB emitted from the electron beam optical system 70 i (beam monitor) The minute drive mechanism 13i is controlled based on the measurement result of the current value. Accordingly, the main controller 110, and one or more adjusted light irradiation apparatus 80 i, for a corresponding electron beam optics 70 i, to monitor the electron beam of the beam current from the electron beam optical system 70 i based on the total current value measured by the corresponding Faraday cup 143, such as by controlling the fine driving mechanism 13 i, it is possible to adjust the relative positions of the plurality of apertures and a plurality of light beams.
  • the main controller 110 while monitoring the total current from the Faraday cup table 149, and controls the fine driving mechanism 13 i, among a plurality of apertures 58a, photoelectric the plurality of apertures 58a are arranged multiple located in one corner of the rectangular area on the element 54 i, to scan for instance the four apertures 58a in the corresponding light beam, a current value obtained by the scanning of the light beam is substantially maximum (approximately up become) state is maintained, and detects the first driving range of the fine driving mechanism 13 i, further while monitoring the total current from the Faraday cup table 149, and controls the fine driving mechanism 13 i, a plurality of Among the apertures, a plurality of, for example, four apertures located at other corner portions of the rectangular area are scanned by the corresponding light beam, and Current value obtained by ⁇ is maintained a state in which a substantially maximum, detecting a second driving range of fine driving mechanism 13 i, common range between the first drive range and the second driving range
  • the electron beam optical system 70 i of the exposure apparatus 100 irradiates the wafer W electrons emitted from the photoelectric element 54 i as a plurality of electron beams by irradiating a plurality of light beams in the photoelectric element 54 i. Therefore, according to the exposure apparatus 100, since there is no blanking aperture, the source of generation of complex distortion due to charge-up and magnetization is fundamentally eliminated, and generation of waste electrons (reflected electrons) not contributing to exposure of the target is suppressed It is possible to eliminate long-term instability factors.
  • main controller 110 performs scanning (movement) of wafer stage WST holding wafer W in the Y-axis direction via stage drive system 26. Control.
  • the main controller 110 passes n (for example, 72000) apertures 58 a of the photoelectric element 54 i for each of the multi-beam optical system 200 i of the m (for example, 45) exposure units 500.
  • n irradiation state of the beam with changing each for each aperture 58a that, it is possible to perform the intensity adjustment of the light beam for each beam using a pattern generator 84 i.
  • the first electrostatic lens 70c 1 of the electrostatic multipole 70c caused by changes in the total current amount, reduction in the X-axis direction and the Y-axis direction due to the Coulomb effect magnification (changes in) Correct, fast, and individually.
  • the second electrostatic lens 70c 2 correction (light pixels of the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch Do.
  • a desired line of a fine line-and-space pattern in which the X-axis direction formed in advance in each of, for example, 45 shot areas on the wafer by double patterning using an ArF immersion exposure apparatus, for example. It becomes possible to form a cut pattern at a desired position on the top, and high precision and high throughput exposure is possible.
  • the exposure apparatus 100 performs complementary lithography as described above, when performing cutting of the L / S pattern, with each multi-beam optical system 200 i, among a plurality of apertures 58a, either Even if the beam passing through the aperture 58a is turned on, in other words, regardless of the combination of the beams turned on, it is formed in advance on each of, for example, 45 shot areas on the wafer. It becomes possible to form a cut pattern at a desired X position on a desired line of a fine line and space pattern in which the X axis direction is a periodic direction.
  • each of the illumination system 82 i, and a pattern generator 84 i is held by a lens barrel 83 i
  • lens barrel 83 i is supported (held) by the supporting member 15
  • the pattern generator 84 i for at least one light irradiation device 80 i of the light irradiation apparatus 80 i 45, for example, the pattern generator 84 i, and supported by the support member 15, supporting the illumination system 82 i It may be supported by one or more other support members different from the member 15.
  • At least a portion of the weight of the remainder of the illumination system 82 i may be adopted a structure which is supported by the frame member 15.
  • the relative position information between the support member 15 and the support member 17 is directly measured (acquired) by the relative position measurement system 29 described above, but instead of the relative position measurement system 29, , One or more measurements to measure the position (relative position) of the support member 15 and the support member 17 with respect to the direction of three or six degrees of freedom with respect to a member serving as a reference, for example, the body frame 101 the device is provided, the main controller 110 from the measurement information of the measurement apparatus, the support member 15 (portion including the illumination system 82 i, and a pattern generator 84 i 45 of the light irradiation device 80 i of the optical unit 18B), the support member 17 (45 light portion including a projection system 86 i of the irradiation apparatus 80 i) and the support member 17 is mounted on the housing 19 (the electron beam optical unit 1 May be obtained relative position information between A).
  • One or two or more measuring devices may be provided, and the main control device 110 may obtain relative position information between the support member 15 and the support member 17 (and the housing 19) from the measurement information of this measurement device.
  • the exposure apparatus 100 includes a relative position measurement system 29 capable of measuring relative position information of the support member 15, the support member 17, and the housing 19 in the XY plane, the support member 17, and the housing 19. And the drive system 25 capable of adjusting the position of the support member 15 in the XY plane.
  • the exposure apparatus may include only one of the relative position measurement system 29 and the drive system 25 or may not have both.
  • the light irradiation device 80 i is provided with an illumination system 82 i having an illumination optical system including a shaping optical system 82b and the reflective optical element 98, illumination light pattern generator 84 i from the illumination system 82 i It illustrated about the case where it is irradiated to.
  • the light irradiation device may not have the illumination optical system and the pattern generator separately from the light source. That is, the light irradiation apparatus, for example, a plurality of light beams provided by self-luminous contrast device array having a plurality of light emitting portions via the projection system 86 i, or light irradiation type that irradiates the photoelectric element not through An apparatus may be used.
  • the self-luminous contrast device array doubles as a light source and a pattern generator. Therefore, the light irradiation device should at least have a pattern generator.
  • a self-emission contrast device array a light emitting unit that emits light in a direction perpendicular to the semiconductor substrate, for example, a radiation emitting diode such as a micro LED, a self-emission contrast device array including a plurality of VCSELs or VECSELs, or a semiconductor substrate It is possible to use a self-luminous contrast device array having a plurality of light emitting units emitting light in parallel with each other, for example, a photonic crystal laser or the like.
  • a self-luminous contrast device array When using a self-luminous contrast device array, it is not necessary to provide illumination optics. Even in the case of using a self-luminous contrast device array, light beams from two or more light emitting portions are collected by a micro lens using a light collecting member such as a micro lens array, and then made incident on a projection system One light beam can be generated which is directed to the photoelectric element. The light beams from the plurality of light emitters of the self light emitting contrast device array can be individually turned on and off. Of course, in the case of using a self-luminous contrast device array, using a light collecting member such as a microlens array, light beams from two or more light emitting portions can be microlenses without passing through a projection system. It is also possible to collect light on the light incident surface of or the surface near it.
  • the beam - when the aperture between the alignment the search for four light beams corresponding to each of the four apertures 58a located respectively in the upper left corner and upper right corner of the aperture arrangement region of the photoelectric element 54 i
  • the present invention is not limited thereto. By performing a search for at least one light beam corresponding to at least one aperture 58a located at each corner, the same alignment between beam apertures is possible. Become.
  • the beam - when the aperture between the alignment by driving the illumination system 82 i, and a pattern generator 84 i in directions of three degrees of freedom in the XY plane using the fine driving mechanism 13 i, a light beam has been described for the case of scanning with respect to the corresponding aperture, not limited to this, for example, at least one movable optical member located between the position of the pattern generator 84 i and the photoelectric elements 54 i of the light irradiation apparatus 80 i
  • the movable optical member may be used to scan the light beam with respect to the corresponding aperture. For example, as shown in FIG.
  • the optical element of the projection system 86 i for example, by the first lens 94 reciprocally movable in the XY plane, the light receiving surface of the photoelectric device 54 i
  • the irradiation positions of the plurality of light beams LB may be changed in the XY plane.
  • the pattern generator 84 i can be reciprocated in parallel to the XY plane (or the surface of the circuit board 102) to allow the light receiving surface of the photoelectric element 54 i to be reciprocated.
  • the irradiation positions of the plurality of light beams LB in the above may be changed in the XY plane.
  • an optical member movable to change the irradiation position of the plurality of light beams LB on the light receiving surface of the photoelectric device 54 i in the XY plane scanning a light beam to a corresponding aperture Can.
  • the movable optical member removably on the optical path of the light beam extending from the pattern generator 84 i to the photoelectric element 54 i may be (out possible) optical element.
  • arrows a, b, c, etc. also indicate the corresponding adjusting devices.
  • adjusting device corresponding to the arrow c is the adjustment device for adjusting the position of the pattern generator 84 i
  • the adjustment device c is in the XY plane of the pattern generator 84 i (or, Not only the position in the plane parallel to the plane of the circuit board 102, but also the inclination with respect to the XY plane may be adjustable. Adjustment of the position includes maintenance.
  • the adjusting device c may move the pattern generator 84 i while maintaining, for example, the positional relationship with the photoelectric element 54 i .
  • the point is that the projection system 86 i , the photoelectric element 54 i , and the electron beam optical system It is only necessary to adjust the relative position of the pattern generator 84 i to at least one of 70 i .
  • the relative position in this case includes the direction perpendicular to the optical axis AXe the electron beam optical system 70 i (e.g., X, Y, [theta] z direction) the relative position of the.
  • the position of the pattern generator 84 i by adjusting device c to the position of at least one light beam emitted from the light irradiation device 80 i may be adjustable, the light with respect to the photoelectric element 54 i position of incidence of the at least one light beam from the irradiation device 80 i may be adjustable.
  • the position of the pattern generator 84 i by adjusting device c is adjustable position of incidence of the at least one light beam from the light irradiation device 80 i for a plurality of apertures 58a .
  • the position of the at least one light beam may be adjustable that, the incident position of the at least one light beam from the light irradiation device 80 i may be adjustable with respect to the photoelectric element 54 i.
  • a parallel plate 91 adjusting device a, the b, by adjusting the position of the first lens 94, the incident of the at least one light beam from the light irradiation device 80 i for a plurality of apertures 58a The position is adjustable.
  • the main controller 110 while monitoring the total current from the Faraday cup table 149 described above, at least one aperture 58a of the photoelectric element 54 i using the adjustment device c, and scanned in the corresponding at least one light beam LB , by controlling the adjustment device c on the basis of the current value obtained by the scanning of the light beam, it is possible to adjust the position of the pattern generator 84 i.
  • main controller 110 while monitoring the total current from the Faraday cup table 149, the adjusting device a, at least one aperture 58a of the photoelectric element 54 i using the respective adjustment device b, corresponding light beam
  • the position adjustment of each of the parallel flat plate 91 and the first lens 94 can be performed by controlling the adjusting device a and the adjusting device b based on the current value obtained by scanning with the light beam and scanning with LB.
  • At least one optical element in the illumination system 82 i for example, a lens, such as a diffraction optical element may be movable.
  • a photoelectric element on 54 i i.e., adjusting the incident position of the at least one light beam from the light irradiation device 80 i for a plurality of apertures 58a if the can to
  • an adjusting device referred to as adjusting device e
  • adjusting device e for adjusting the position of the one optical member is indicated by a double arrow e.
  • the adjusting device e may move one of the optical members while maintaining the positional relationship with, for example, the photoelectric element 54 i , or, together with the pattern generator 84 i , at least one of the optical elements in the illumination system 82 i .
  • the member may be moved.
  • the adjusting device e, the holding member for holding and its one optical member and the pattern generator 84 i, for example, to the lens barrel 83 i may have a driving device for moving, the pattern generator 84 i and moving the drive apparatus, which and a driving device for moving at least one optical member independently in the illumination system 82 i may have.
  • the adjustment device e is, holding members for holding at least one optical element in the illumination system 82 i, for example by moving the lens barrel, a position of the at least one optical element, regardless of the pattern generator 84 i , May be adjusted.
  • the adjusting device e can adjust the relative position of at least one optical member in the illumination system 82 i with respect to at least one of the projection system 86 i , the photoelectric element 54 i , and the electron beam optical system 70 i. good.
  • the relative position in this case includes the direction perpendicular to the optical axis AXe the electron beam optical system 70 i (e.g., X, Y, [theta] z direction) the relative position of the.
  • the position of at least one optical element in the illumination system 82 i by adjusting device e to a position of at least one light beam emitted from the light irradiation device 80 i may be adjustable
  • the incident position of the at least one light beam from the light irradiation device 80 i may be adjustable with respect to the photoelectric element 54 i.
  • the position of the pattern generator 84 i by adjusting device e is adjustable position of incidence of the at least one light beam from the light irradiation device 80 i for a plurality of apertures 58a . Adjustment of the position includes maintenance.
  • the projection system 86 i, the photoelectric element 54 i, and at least one adjustable adjusting device e the relative position of the optical member of the illumination system in 82 i for at least one electron beam optical system 70 i is 45 the light may be provided separately to the irradiation apparatus 80 i, some of the plurality, for example, may be one provided for two light irradiation apparatus 80 i.
  • the adjustment device, and an adjustable second driving device the position of the optical member position the first drive unit and the other illumination system in 82 i with an adjustable optical element of one of the illumination system in 82 i May be In this case, the adjustment amount, the adjustment direction, and the like may be the same or different between the first drive device and the second drive device.
  • FIG. 21 shows a plurality of adjusting devices, at least one may not be provided, or all may not be provided.
  • the resulting main controller 110 while monitoring the total current from the Faraday cup table 149, at least one aperture 58a of the photoelectric element 54 i, and scanned in the corresponding at least one light beam LB, a scanning of the light beam based on the current value is, by controlling the adjustment device e, it is possible to adjust the position of at least one optical element in the illumination system 82 i.
  • Explanation has longitudinal adjustment device for adjusting the position of the movable optical member located between the position of the pattern generator 84 i and the photoelectric elements 54 i described above, well as adjusting device for adjusting the position of the pattern generator, adjusted as with device e, it may be provided separately in the light irradiation apparatus 80 i of 45, but some of the plurality, for example, may be one provided for two light irradiation apparatus 80 i.
  • the adjustment device for adjusting the position of the movable optical member located between the position of the pattern generator 84 i and the photoelectric elements 54 i described above is one provided for two light irradiation apparatus 80 i
  • the adjusting device is configured to adjust the position of the movable optical member in one of the light irradiating devices (also referred to as a first driving device) and the position of the movable optical member in the other light irradiating device. May be adjustable (also referred to as a first drive).
  • the first and second actuators drive elements such as piezo elements and electrostrictive elements, ultrasonic motors, voice coil motors and the like can be used according to the required drive stroke. In this case, the adjustment amount and the adjustment direction may be the same or different for the first actuator and the second actuator.
  • the beam-aperture alignment may be performed in combination with the driving of.
  • the main controller 110 in the above embodiment the same procedure, locate the final drive position of the micro-driving mechanism 13 i, while setting the fine driving mechanism 13 i into its final drive position, the Faraday cup table 149 total current while monitoring the, by driving at least one of the above movable optical member and the optical member in the illumination system 82 i, at least one of a number of apertures 58a, scanned with corresponding light beam LB
  • the adjustment position of the optical member to be driven at which the current value obtained by the scanning of the light beam becomes maximum can be searched. This enables beam-aperture alignment with better accuracy than the above embodiment.
  • the irradiation positions of the plurality of light beams are adjusted in the optical axis AXp direction.
  • a pair of wedge members 92a and 92b relatively movable in a predetermined uniaxial direction in the XY plane shown in a circle e in FIG.
  • the exposure apparatus does not have to include both the micro drive mechanism 13i and the movable optical member, and may not have one or both.
  • the Faraday cup table 149 may be carried into the stage chamber 10 from the outside as needed. Alternatively, the Faraday cup table 149 may be permanently installed in the stage chamber 10.
  • a detector capable of detecting the beam current of the electron beam is not limited to the Faraday cup. It may be any detectable beam current on path of the electron beam, not only on the exit side of the electron beam optical system 70 i, between the photoelectric element 54 i and the electron beam optical system 70 i, can detect beam current Detector (beam monitor) may be incorporated. The same applies to the second and third embodiments described later in this regard.
  • the pattern generator comprising a self-luminous contrast device array and the projection system 86 i light irradiation apparatus having a (hereinafter, for convenience, referred to as the projection system with the light emitting device unit) when is used, the projection system 86 i, the photoelectric element 54 i, and electron beam patterns to at least one of the optical systems 70 i Zhen regulator 84
  • An adjustment device (corresponding to the adjustment device c described above) capable of adjusting the relative position of i may be separately provided to two or more projection system-attached light emitting device apparatuses, but a plurality of, for example, two projection system attached light emitting device apparatuses
  • One adjustment device may be provided for The adjusting device may have a first driving device capable of adjusting the position of one pattern generator and a second driving device capable of adjusting the position of the other pattern generator. In this case, the adjustment
  • a pattern generator self-luminous contrast device array supported by the support member 15 about at least a portion of the light irradiation device may support the projection system 86 i in the support member 17.
  • the support member 15 may support the illumination optical system.
  • the support member 15 may be supported by the support member 17.
  • the supporting member 15, the adjusting device c, the e, of at least one optical element of the pattern generator 84 i, or the pattern generator 84 i and the illumination system in 82 i of at least one of The position can be made adjustable.
  • at least one of the adjustment devices c and e may be controlled based on the measurement result of the relative position measurement system 29 that acquires information on the relative position of the support member 17 and the support member 15.
  • the relative position (positional relationship) between the support member 17 and the support member 15 is based on the design value as a result of assembling work of each part of the apparatus at the time of start-up and maintenance of the exposure apparatus 100.
  • the relative position measurement system 29 is provided in consideration of the fact that the relative position (positional relationship) between the support member 17 and the support member 15 may gradually change over time, or the relative position measurement system is provided.
  • a drive system 25 is provided which adjusts the relative position between the support member 17 and the support member 15 based on the measurement result of 29.
  • the adjustment of the relative position in this case includes at least one of changing and adjusting the relative position.
  • the drive system 25 may be used in combination with the adjusting device c and the adjusting device e, or at least one of the adjusting device c and the adjusting device e may be omitted.
  • the support member 15 may be supported by, for example, the pillar 101 c of the body frame 101 via the support portion or the drive portion.
  • the support member 17 and the support member 15 may be supported by a frame different from the body frame 101 on which the housing 19 is supported.
  • the housing 19 may be supported by a frame different from the body frame 101.
  • a part of the support member 17 may be supported by one or more other support frames different from the housing 19. That is, a configuration may be employed in which a part of the weight of the support member 17 is supported by a support frame other than the housing 19 and the weight of at least a part of the remaining part of the support member 17 is supported by the housing 19.
  • FIG. 22 is a view showing the configuration of the exposure apparatus 1000 from which the body frame 101 has been removed, with a part omitted.
  • An exposure apparatus 1000 according to the second embodiment is different from the exposure apparatus 100 according to the first embodiment in that an optical system 118 is provided instead of the optical system 18. The differences will be described below.
  • the optical system 118 is provided with an optical unit 117 instead of the optical unit 18B in the optical system 18 described above.
  • an optical unit 117 included in the exposure apparatus 1000 is shown together with the first vacuum chamber 34 of the housing 19 and the like.
  • 45 light irradiation devices 180 i 1 to 45) are provided instead of the 45 light irradiation devices 80 i .
  • barrel 83 i is mounted through the micro-driving mechanism 13 i to the top of the barrel 87 i. That is, the light irradiation device 180 i includes a barrel 83 i and the fine drive mechanism 13 i, and the lens barrel 87 i not physically separated.
  • the light irradiation device 180 i 45 is held by the support member 17, the support member 17 more, is supported suspended from the upper frame 101b of the body frame 101 via, for example, the three suspension support mechanisms 602.
  • the optical unit 117 is supported at three points in a suspended state from the upper frame 101 b of the body frame 101.
  • the lens barrel 83 i is moved if with respect to the barrel 87 i, fine driving mechanism 13 i may not be arranged between the lens barrel 83 i and the lens barrel 87 i.
  • the electron beam optical unit 18A (housing 19) is supported at three points in a suspended state from the upper frame 101b of the body frame 101 by three suspension support mechanisms 600 independently of the optical unit 117.
  • the support member 17 is supported by the body frame 101 so that the weight of the support member 17 and the 45 light irradiators 180 i held by the support member 17 does not cover the housing 19.
  • transmission of the vibration to the other is suppressed. .
  • the electron beam optical unit 18A (housing 19) is supported by being suspended from the upper frame 101b of the body frame 101 independently of the optical unit 117, the two-dimensional encoders 29a, 29b are supported by the support member 17 and It is provided between the housing 19 and the housing 19. More specifically, a pair of scale members 33a and 33b are fixed in the vicinity of both ends in the Y-axis direction on the upper surface of the housing 19, and are opposed to the scale members 33a and 33b, respectively. The heads 35a and 35b are fixed to the head.
  • the head 35a forms a two-dimensional encoder 29a that measures positional information of the electron beam optical unit 18A in the X-axis direction and the Y-axis direction with respect to the detection center of the head 35a using the scale 33a.
  • the head 35b configures a two-dimensional encoder 29b that measures positional information in the X-axis direction and the Y-axis direction of the electron beam optical unit 18A based on the detection center of the head 35b using the scale member 33b.
  • the position information measured by the pair of two-dimensional encoders 29a and 29b is supplied to the main controller 110 (see FIG. 24), and the main controller 110 uses the position information measured by the pair of two-dimensional encoders 29a and 29b.
  • a relative position measurement system 29 (see FIG. 24) capable of measuring relative position information of the optical unit 117 and the electron beam optical unit 18A in the XY plane is configured by the pair of two-dimensional encoders 29a and 29b.
  • the encoder system may not be a two-dimensional encoder system.
  • the scale member of the encoder system may be disposed on the support member 17 and the head may be disposed on the housing 19.
  • the relative position measurement system 29 is not limited to the encoder system, and another measurement system such as an interferometer system may be used.
  • the relative position (positional relationship) between the support member 17 and the housing 19 deviates from the design value as a result of assembling work of each part of the apparatus at the time of start-up of the exposure apparatus 1000, maintenance time, etc.
  • the relative position (positional relationship) between the support member 17 and the housing 19 may gradually change over time.
  • the exposure apparatus 1000 is provided with the above-mentioned positioning device 23 (see FIG. 24), and the main controller 110 controls the positioning device 23, whereby the casing 19 (electron beam optical unit 18A) for the body frame 101 is provided.
  • the relative positions of the X axis direction, the Y axis direction, and the Z axis direction, and the relative rotation angles around the X axis, the Y axis, and the Z axis are maintained in a fixed state (predetermined state).
  • a drive system 25A similar to the above-described drive system 25 capable of adjusting the position in the XY plane of the support member 17 (optical unit 117) with respect to the housing 19 (electron beam optical unit 18A) (FIG. Reference) is provided.
  • this drive system 25A the position of the optical unit 117 relative to the electron beam optical unit 18A in the XY plane can be maintained in a predetermined state or set in a desired state.
  • Main controller 110 determines drive system 25A based on the relative position (for example, the output of relative position measurement system 29) of optical unit 117 and electron beam optical unit 18A in the three degrees of freedom direction (X, Y, ⁇ z). By controlling, for example, the support member 17 is driven.
  • the rotation angles around the X axis direction, Y axis direction, and Z axis with respect to the electron beam optical unit 18A of the optical unit 117 are maintained in a fixed state (predetermined state) or adjusted to a desired state Be done.
  • the drive system 25A relates to at least one of the housing 19 (electron beam optical unit 18A) and the support member 17 (optical unit 117) in the Z-axis direction parallel to the optical axis AXe, the ⁇ x direction, and the ⁇ y direction.
  • the positional relationship may be further adjustable.
  • the exposure apparatus 1000 includes the constituent parts (illumination system 82 i , pattern generator 84 i , projection system 86 i etc.) of the light irradiator 180 i. It is similar.
  • the configuration of the parts other than the optical system 118 is the same as that of the exposure apparatus 100 described above.
  • FIG. 24 is a block diagram showing the input / output relationship of the main control unit 110 that mainly constitutes the control system of the exposure apparatus 1000.
  • Main controller 110 includes a microcomputer and the like, and centrally controls the components of exposure apparatus 1000 including the components shown in FIG.
  • multi-beam optical system 200 the light irradiation apparatus 180 1 is connected to the control unit 11 of 1, based on instructions from main controller 110, a light source (a laser diode) that is controlled by a control unit 11 82a, a diffractive optical element (and an optical characteristic adjustment device), and the like.
  • the electron beam optical system 70 1 is connected to the control unit 11 based on an instruction from the main controller 110, a pair of electromagnetic lenses 70a which is controlled by the control unit 11, 70b and electrostatic multipole 70c (second 1 electrostatic lens 70c 1 and second electrostatic lens 70c 2 ).
  • a signal processing device 108 In the exposure apparatus 1000, 45 exposure units 500i are provided.
  • the same effects as those of the exposure apparatus 100 of the first embodiment can be obtained.
  • a plurality of light beams generated by the pattern generator by fine driving mechanism 13 i since it scans for the corresponding photoelectric element 54 i
  • alignment between beams and apertures is possible, thereby performing alignment of each of all the apertures 58a with the corresponding light beam in a simple and short time. Is possible.
  • the entire light irradiation device 180 i 45 is supported (held) by the supporting member 17 is not limited to this, the light irradiation device 180 i 45 at least 1 for one of the light irradiation device 180 i, a portion of the light irradiation device 180 i, for example, one or both of illumination system 82 i, and a pattern generator 84 i, supported by different one or more of the support members and the support member 17 It is also good to do.
  • the light irradiation apparatus 180 i 45 a portion of the weight of the at least one light irradiation device 180 i is supported by a support member other than the supporting member 17, the remainder of the at least one light irradiation device 180 i A configuration in which at least a part of the weight is supported by the frame member 17 may be adopted.
  • relative position information between the support member 17 (optical unit 117) and the housing 19 (electron beam optical unit 18A) is directly measured (acquired) by the relative position measurement system 29 described above.
  • the relative position measurement system 29 instead of the relative position measurement system 29, the position of the support member 17 and the housing 19 with respect to the direction of three or six degrees of freedom with respect to the reference member, for example, the body frame 101.
  • Two measuring devices for measuring (relative position) are provided, and from the measurement information of the two measuring devices, the main control device 110 comprises the support member 17 (optical unit 117) and the housing 19 (electron beam optical unit 18A). It is good also as asking for relative position information.
  • the main control device 110 obtains relative position information between the support member 17 (optical unit 117) and the housing 19 (electron beam optical unit 18A) from the measurement information of the two measuring devices. good.
  • the exposure apparatus 1000 measures relative position information capable of measuring relative position information in the XY plane between the support member 17 (optical unit 117) and the housing 19 (electron beam optical unit 18A).
  • the system 29 and the drive system 25A capable of adjusting the position in the XY plane with respect to the housing 19 (electron beam optical unit 18A) of the support member 17 (optical unit 117) are provided.
  • the exposure apparatus may include only one of the relative position measurement system 29 and the drive system 25A, or may not have both. However, in this case, it is desirable that the position in the XY plane of the support member 17 (optical unit 117) relative to the housing 19 (electron beam optical unit 18A) be adjustable.
  • the interior of the light irradiation device 180 i such as at least one movable optical member located between the position of the pattern generator 84 i and the photoelectric element 54 i May be provided.
  • the movable optical member may be used to scan the light beam with respect to the corresponding aperture.
  • a predetermined position on the optical path of the beam generated by the pattern generator 84 i is located just before example of the first lens 94
  • the parallel plate 91 can be tilted with respect to the XY plane by the adjusting device a, or an optical member of the projection system 86 i such as the first lens 94 configured to be reciprocally movable in the XY plane by the adjusting device b. be able to.
  • Parallel plate 91 by any of the positional adjustment of the first lens 94, it is possible to change the irradiation position of the plurality of light beams LB on the light receiving surface of the photoelectric device 54 i in the XY plane.
  • Parallel plate 91 by the respective adjusting devices a and adjusting device b, by adjusting the position of the first lens 94 may be adjustable to position the at least one light beam emitted from the light irradiation device 180 i and the incident position of the at least one light beam from the light irradiation device 180 i may be adjustable with respect to the photoelectric element 54 i.
  • the position is adjustable.
  • the movable optical member, removably on the optical path of the light beam extending from the pattern generator 84 i to the photoelectric element 54 i may be (out possible) optical element.
  • the pattern generator 84 i parallel to reciprocally move in the XY plane (or the plane of the circuit board 102) by adjusting device c in that configuration, it is also possible to change the irradiation position of the plurality of light beams LB on the light receiving surface of the photoelectric device 54 i in the XY plane.
  • the adjustment device c is in the XY plane of the pattern generator 84 i (or, in a plane parallel to a plane of the circuit board 102) not only the position of may be adjustable inclination with respect to the XY plane. Adjustment of the position includes maintenance.
  • the adjusting device c may move the pattern generator 84 i while maintaining, for example, the positional relationship with the photoelectric element 54 i .
  • the point is that the projection system 86 i , the photoelectric element 54 i , and the electron beam optical system It is only necessary to adjust the relative position of the pattern generator 84 i to at least one of 70 i .
  • the relative position in this case includes the direction perpendicular to the optical axis AXe the electron beam optical system 70 i (e.g., X, Y, [theta] z direction) the relative position of the.
  • the exposure apparatus 1000 by adjusting the position of the pattern generator 84 i by adjusting device c, is adjustable position of incidence of the at least one light beam from the light irradiation device 180 i for a plurality of apertures 58a .
  • the even exposure apparatus 1000 it is also possible to adjust the position of at least one optical element in the illumination system 82 i by adjusting device e.
  • the adjusting device e may move one of the optical members while maintaining the positional relationship with, for example, the photoelectric element 54 i , or, together with the pattern generator 84 i , at least one of the optical elements in the illumination system 82 i .
  • the member may be moved.
  • the adjusting device e, the holding member for holding and its one optical member and the pattern generator 84 i, for example, to the lens barrel 83 i may have a driving device for moving, the pattern generator 84 i and moving the drive apparatus, which and a driving device for moving at least one optical member independently in the illumination system 82 i may have.
  • the adjustment device e is, holding members for holding at least one optical element in the illumination system 82 i, for example by moving the lens barrel, a position of the at least one optical element, regardless of the pattern generator 84 i , May be adjusted.
  • the adjusting device e can adjust the relative position of at least one optical member in the illumination system 82 i with respect to at least one of the projection system 86 i , the photoelectric element 54 i , and the electron beam optical system 70 i. good.
  • the relative position in this case includes the direction perpendicular to the optical axis AXe the electron beam optical system 70 i (e.g., X, Y, [theta] z direction) the relative position of the.
  • the position of at least one optical element in the illumination system 82 i by adjusting device e to a position of at least one light beam emitted from the light irradiation device 180 i may be adjustable
  • the incident position of the at least one light beam from the light irradiation device 180 i may be adjustable with respect to the photoelectric element 54 i.
  • the exposure apparatus 1000 by adjusting the position of the pattern generator 84 i by adjusting device e, is adjustable position of incidence of the at least one light beam from the light irradiation device 180 i for a plurality of apertures 58a . Adjustment of the position includes maintenance.
  • the projection system 86 i, the photoelectric element 54 i, and at least one adjustable adjusting device e the relative position of the optical member of the illumination system in 82 i for at least one electron beam optical system 70 i is 45 the light may be provided separately to the irradiation device 180 i, some of the plurality, for example, may be one provided for two light irradiation device 180 i.
  • the adjustment device, and an adjustable second driving device the position of the optical member position the first drive unit and the other illumination system in 82 i with an adjustable optical element of one of the illumination system in 82 i May be In this case, the adjustment amount, the adjustment direction, and the like may be the same or different between the first drive device and the second drive device.
  • the adjustment device for adjusting the position of the movable optical member located between the position of the pattern generator 84 i and the photoelectric elements 54 i described above is one provided for two light irradiation device 180 i
  • the adjusting device is configured to adjust the position of the movable optical member in one of the light irradiating devices (also referred to as a first driving device) and the position of the movable optical member in the other light irradiating device. May be adjustable (also referred to as a first drive).
  • the first and second actuators drive elements such as piezo elements and electrostrictive elements, ultrasonic motors, voice coil motors and the like can be used according to the required drive stroke. In this case, the adjustment amount and the adjustment direction may be the same or different for the first actuator and the second actuator.
  • the main controller 110 monitors at least one of the adjustment devices a, b, c and e while monitoring the total current from the Faraday cup table 149.
  • the exposure apparatus 1000 instead of or in addition to the adjustment of the irradiation positions of the plurality of light beams on the light receiving surface of the photoelectric element 54 in the XY plane, for example, they are The irradiation positions of the plurality of light beams in the direction of the optical axis AXp may be adjusted using a pair of wedge members 92a and 92b relatively movable in a predetermined uniaxial direction in the XY plane.
  • the exposure apparatus 1000 does not have to include both the micro drive mechanism 13 i and the movable optical member, and may not have one or both.
  • the light irradiation device 180 i 45 instead of at least a portion of the two or more light irradiation device 180 i, as the projection system with a light emitting device apparatus described above light irradiation device
  • an adjustment device (corresponding to the adjustment device c described above) capable of adjusting the relative position of the pattern generator 84 i to at least one of the projection system 86 i , the photoelectric element 54 i , and the electron beam optical system 70 i
  • the light emitting device with two or more projection systems may be individually provided, but one adjustment device may be provided for a plurality of, for example, two light emitting device with projection systems.
  • the adjusting device may have a first driving device capable of adjusting the position of one pattern generator and a second driving device capable of adjusting the position of the other pattern generator.
  • the adjustment amount, the adjustment direction, and the like may be the same or different between the first drive device and the second drive device.
  • the exposure apparatus may include a support member other than the support member 17 that supports the pattern generator of at least a part of the projection system-included light emitting device (light irradiation apparatus).
  • the other support member may support the illumination optical system.
  • the illumination system 82 i for some of the light irradiation device 180 i of the light irradiation device 180 i 45, the illumination system 82 i, and a pattern generator 84 i, another support the support member 17 for supporting respectively through the lens barrel 83 i
  • the member may be provided in the exposure device.
  • the other support member may be supported by the support member 17.
  • the exposure apparatus including the support member 17 and the other support member described above may further include a measurement device for acquiring information on the relative position between the support member 17 and the other support member.
  • an exposure apparatus provided with another support member with light irradiation device 180 i is adjusting device c as described above, further comprise an e, for the different support members, the adjusting device c, the e,
  • the position of at least one of the pattern generator 84 i or the pattern generator 84 i and at least one optical member in the illumination system 82 i can be made adjustable.
  • at least one of the adjustment devices c and e may be controlled based on the measurement result of the measurement device for acquiring information on the relative position between the support member 17 and another support member.
  • the measuring device for acquiring information on the relative position between the supporting member 17 and another supporting member is different from the supporting member 17 as a result of the assembly work of each part of the apparatus at the time of start-up of the exposure apparatus 1000, maintenance time, Considering that the relative position (positional relationship) with the support member may deviate from the design value, or the relative position (positional relationship) between the support member 17 and another support member may gradually change over time.
  • an adjustment device e.g., a drive device for moving another support member relative to the body frame
  • Adjustment of the relative position includes at least one of changing and adjusting the relative position.
  • the adjustment device for adjusting the relative position between the support member 17 and another support member may be used in combination with the adjustment device c and the adjustment device e, or at least one of the adjustment device c and the adjustment device e. You may omit The relative positions of the support member 17 and another support member to be measured and adjusted, including the direction of the relative position orthogonal to the optical axis AXe the electron beam optical system 70 i.
  • the additional support member may be supported by the body frame 101, for example.
  • the other support member may be supported by the pillar 101c of the body frame 101 via the support portion or the drive portion, or may be suspended from the upper frame 101b via the suspension support mechanism. Also good.
  • at least one of the support member 17 and the other support member may be supported by a frame different from the body frame 101 on which the housing 19 is supported.
  • the housing 19 may be supported by a frame different from the body frame 101.
  • the support member 17 is suspended and supported from the upper frame 101b of the body frame 101 via the suspension support mechanism 602.
  • the support member 17 may be supported by the pillars 101 c of the body frame 101 via a plurality of drive mechanisms 604. Also in this case, since the support member 17 and the housing 19 are separated and supported, even if vibration occurs in one of the support member 17 and the housing 19, transmission of the vibration to the other is suppressed. Ru.
  • the plurality of drive mechanisms 604 are provided instead of the drive system 25A.
  • the main controller 110 servo-controls the plurality of drive mechanisms 604 based on the measurement information of the relative position measurement system 29 described above, for example, the support member 17 (optical unit 117) and the housing 19 (electron beam optical unit)
  • the positional relationship with 18A) may be maintained in a predetermined state.
  • the support member 17 may be supported by the housing 19.
  • the support member 17 may be placed on the housing 19.
  • a part of the support member 17 may be supported by one or more other support frames different from the housing 19. That is, a configuration may be employed in which a part of the weight of the support member 17 is supported by a support frame other than the housing 19 and the weight of at least a part of the remaining part of the support member 17 is supported by the housing 19.
  • FIG. 26 is a diagram showing the configuration of the exposure apparatus 2000 from which the body frame 101 has been removed, with a part omitted.
  • the exposure apparatus 2000 according to the third embodiment is the same as the exposure apparatus 1000 according to the second embodiment described above in that an optical system 118 is provided instead of the optical system 18 as described above. It is different from 100. Further, the exposure apparatus 2000 is different from the exposure apparatus 1000 in that the optical unit 117 constituting the optical system 118 is mounted on the housing 19 of the electron beam optical unit 18A through the plurality of support mechanisms 220. . The differences will be described below.
  • the support member 17 supporting the plurality of, for example, 45 light irradiation devices 180 of the optical unit 117 is a case of the electron beam optical unit 18A through the plurality of support mechanisms 220. It is mounted on the 19th. Therefore, in the exposure apparatus 2000, unlike the exposure apparatus 1000 according to the second embodiment, the relative position measurement system 29 and the position of the support member 17 such as the drive system 25A described above in the XY plane are adjusted. There is no possible drive system.
  • the configuration of the other parts is the same as that of the exposure apparatus 1000 and the exposure apparatus 100 described above.
  • the exposure apparatus 2000 of the third embodiment the same effect as that of the exposure apparatus 1000 of the second embodiment can be obtained. Further, the exposure apparatus 2000 is different from the exposure apparatus 1000 only in that the support member 17 constituting a part of the optical unit 117 is not supported by being suspended from the body frame 101 and is mounted on the housing 19. It is.
  • detailed explanation is omitted, but basically, it is possible to apply the numerous structural additions and modifications described for the exposure apparatus 1000 as it is unless there is any contradiction. is there.
  • each of the plurality of support mechanisms 220 is constituted by a drive mechanism having an actuator such as an ultrasonic motor or a voice coil motor, for example, and the plurality of support mechanisms 220 form a frame.
  • 70 optical unit 117
  • the housing 19 electron beam optical unit 18A
  • the relative position measurement system 29 described above may be provided.
  • the electron from the first vacuum chamber 34 is formed by the tube 196 i , the pipe 202 i and the through hole 192 a i connecting the two.
  • a passage through which the beam EB passes is formed, a single piping member, for example, a stainless steel tube may define a passage through which the electron beam EB from the first vacuum chamber 34 passes. Also in this case, the passage through which the electron beam passes can be isolated from the space where the electromagnetic lenses 70a and 70b are disposed.
  • the electron beam from the first vacuum chamber 34 has the same configuration as that of the above embodiment.
  • a passage through which the EB passes may be formed, and in another at least one electron beam optical system, a single piping member may form a passage through which the electron beam EB from the first vacuum chamber 34 passes.
  • the inside of the first vacuum chamber 34 is evacuated by the vacuum pump 46A independently of the exposure chamber 12, and the passage through which the electron beam EB from the first vacuum chamber 34 passes is ventilated.
  • the vacuum pump 46A independently of the exposure chamber 12, and the passage through which the electron beam EB from the first vacuum chamber 34 passes is ventilated.
  • the invention is not limited thereto, and a pump for vacuum supply as a factory power is used instead of at least one of the vacuum pump 46A and the vacuum pump 46B. It is good.
  • each of the plurality of electron beam optical systems 70 i 1 to 45 is provided with the electromagnetic lenses 70 a and 70 b individually held by the partial lens barrels 104 a i and 104 b i .
  • the present invention is not limited thereto, and only one electromagnetic lens held by a single lens barrel may be provided.
  • the electron beam from the photoelectric element 54 i each photoelectric layer corresponding to the plurality of electron beam optical system 70 i are arranged space (such as the first vacuum chamber 34 described above) to pass through
  • a passage member such as a stainless steel tube, may be disposed at the center of the electromagnetic lens so that the passage through which the electron beam passes can be isolated from the space in which the electromagnetic lens is disposed. It is not always necessary to arrange a stainless steel tube or the like. That is, the path through which the electron beam passes may not necessarily be separated from the space in which the electromagnetic lens is disposed.
  • a passage through which the electron beam passes is formed in the center (central portion) of the lens barrel holding the electromagnetic lens, so that a passage in which the electron beam passes is formed in the lens barrel, that is, the inside
  • the member has a highly airtight structure capable of maintaining the internal vacuum.
  • a plurality of electromagnetic lenses may be held up and down inside a single lens barrel.
  • Such structure that holds one or more electromagnetic lenses with a single barrel, a plurality can be employed in part or all of the electron beam optical system 70 i, for example 45.
  • the structure that holds the barrel of a plurality of electron beam optical system 70 i by forming the same exhaust passage and air passage 197 described above for connecting the internal space of the plurality of barrel mutually , the plurality of electron beams photoelectric element 54 i each photoelectric layer corresponding to the optical system 70 i space (electron emitting surface) is placed (hereinafter, for convenience, referred to as a photoelectric layer arrangement space) without passing through the exhaust passage It is possible to evacuate the electron beam passage inside each of the plurality of lens barrels. In this case, the electron beam passage inside each of the plurality of lens barrels can be evacuated via the exhaust passage independently of the photoelectric layer arrangement space.
  • the photoelectric layer arrangement space is evacuated by a first vacuum pump (first vacuum system), and the electron beam passage inside each of the plurality of lens barrels is different from the first vacuum pump via an exhaust passage.
  • the vacuum can be drawn by a vacuum pump (second vacuum system).
  • a third vacuum pump (third vacuum system) for evacuating the inside of a space (the above-described exposure chamber 12 corresponds to this) separately from the first vacuum pump and the second vacuum pump. ) May be provided.
  • a pump for vacuum supply may be used as a factory power.
  • a structure having an exhaust path similar to the aforementioned air passage 197 connecting the inner spaces of the barrels of the two or more electron beam optical systems 70 i described above has two or more electron beam optical systems 70. At least a portion of each of i may be supported, or at least a portion of each of two or more electron beam optical systems 70 i may not be supported.
  • the structure in which the exhaust path is formed supports at least a part of each of the two or more electron beam optical systems 70 i even when the path through which the electron beam passes is isolated from the space where the electromagnetic lens is disposed However, at least a part of each of the two or more electron beam optical systems 70 i may not be supported.
  • the electromagnetic lenses 70a and 70b are individually disposed inside the partial lens barrels 104a i and 104b i , the above-described tubes for dividing the electron beam passage are provided. It is not necessary to arrange 196 i etc. in the central part of the electromagnetic lenses 70a and 70b. That is, the path through which the electron beam passes may not necessarily be isolated from the space in which the electromagnetic lenses 70a and 70b are disposed.
  • a path through which the electron beam passes is formed inside (central portion) of the partial lens barrels 104a i and 104b i holding the electromagnetic lenses 70a and 70b, so the partial lens barrels 104a i and 104b i That is, it is desirable that the passage member in which the passage through which the electron beam passes be formed has a highly airtight structure capable of maintaining the internal vacuum.
  • a plurality can be employed in part or all of the electron beam optical system 70 i, for example 45.
  • a structure in which an exhaust path similar to the vent path 197 described above is formed between the partial barrel 104a i and the partial barrel 104b i (in the above embodiment, the frame member 192 corresponds to this), and a part of each of the plurality of electron beam optical systems 70 i may be supported by the structure.
  • an electromagnetic lens 70b held by the plurality of electron beam optical system 70 i each partial tube 104b i in the structure may be for example suspended support.
  • the respective partial lens barrels 104b i may also be suspended and supported by the structure.
  • a plurality of electron beam optical system 70 i each partial tube electromagnetic lens 70a held by 104a i also the structure, for example, may be supported from below via the spacer member.
  • the respective partial lens barrels 104a i may be similarly supported by the structure.
  • all of the 45 electron beam optical systems 70 i have been described on the premise that they include the electron beam paths and have the same configuration. However, in some electron beam optical systems , May be different from the other configuration.
  • the passage of the electron beam in all the 45 electron beam optical system 70 i of a part of the passage of the electron beam is provided in the frame member 192, in the part of the electron beam optics, the passage of the electron beam May be formed inside the passage member physically separated from the frame member 192.
  • the present invention is not limited to this, and the electron beam optical unit 18A is provided separately from the structure in which the exhaust path is formed, and includes a frame (which may be called a housing) in which the photoelectric layer arrangement space is formed inside. May be When the structure in which the exhaust passage is formed and the frame in which the photoelectric layer arrangement space is formed are separate members, the structure may be supported by the frame, for example, in a suspended state.
  • a frame in which the photoelectric layer arrangement space is formed inside supports, for example, a part of each of a plurality of, for example, 45 electron beam optical systems 70 i , for example, an electromagnetic lens 70 a held by a partial lens barrel 104 a i As well.
  • route of the electron beam from the 1st vacuum chamber 34 demonstrated by the said embodiment from the space where electromagnetic lens 70a, 70b is arrange
  • the contents described in the structure and the above “Modified example of the support structure of each part of the electron beam optical system, the configuration of the path of the electron beam, etc.” have a plurality of electron beam optical systems of the type not using photoelectric elements.
  • the present invention can also be suitably applied to an electron beam apparatus provided with multi-column electron beam optics.
  • the photoelectric element in the case of using a so-called aperture-integrated photoelectric element in which an aperture such as the photoelectric element 54 is integrally provided with the photoelectric layer, the photoelectric element is integrated with the holder 88 in the XY plane.
  • a movable actuator may be provided.
  • an actuator for moving the photoelectric element 54 may be used as a beam-aperture alignment adjustment device, in place of or in addition to the other adjustment devices described above.
  • the aperture integrated photoelectric element (54) is not limited to the type shown in FIG. 27A, and for example, as shown in FIG. 27B, the aperture in the photoelectric element 54 of FIG. It is also possible to use a photoelectric device 54 a of a type in which the space in 58 a is filled with the light transmission film 144. In the photoelectric element 54a, instead of the light transmitting film 144, a part of the base 56 may be filled in the space in the aperture 58a.
  • a light shielding film 58 having an aperture 58a is formed on the upper surface (light incident surface) of the substrate 56 by vapor deposition of chromium, and the lower surface (light emission surface) of the substrate 56 27C, the space in the aperture 58a is filled with the light transmission film 144 in the photoelectric device 54b of FIG. 27C. It is also possible to use a type of photoelectric device 54c.
  • the base 56 is not only a light transmitting member such as quartz glass but also a light transmitting member and a light transmitting film (single layer or multilayer ) May be configured.
  • the aperture integrated photoelectric element when the aperture integrated photoelectric element such as the photoelectric element 54 is used, the aperture integrated photoelectric element may be provided with an actuator capable of moving in the XY plane.
  • an aperture integrated photoelectric element as shown in FIG. 28, a multi-pitch type in which a row of apertures 58a of pitch a and a row of apertures 58b of pitch b are formed every other row.
  • the aperture integrated photoelectric device 54d may be used.
  • a zoom function of changing the projection magnification (magnification) in the X-axis direction may be used in combination with the above-described optical characteristic adjustment device. In such a case, as shown in FIG.
  • each of the plurality of beams may be irradiated onto the area on the photoelectric element 54a including the corresponding apertures 58a or 58b. That is, the size of each of the plurality of apertures 58a or 58b on the photoelectric element 54d may be smaller than the size of the cross section of the corresponding beam.
  • a row of three or more types of apertures having different pitches is formed on the light shielding film 58 of the photoelectric conversion element in the photoelectric element 54d, and exposure is performed in the same procedure as described above, thereby cutting patterns of three or more pitches. It may be possible to cope with the formation of
  • the aperture and the photoelectric layer are integrally formed in the aperture integrated photoelectric device used in each of the above embodiments, the present invention is not limited to this.
  • the aperture and the photoelectric layer have a predetermined clearance (gap, They may be disposed opposite to each other via a gap).
  • an aperture member having a light shielding film in which a large number of apertures are formed, and a photoelectric element (may be referred to as a separate aperture type photoelectric element) in which a photoelectric layer is vapor-deposited on the light emission surface of the substrate are used.
  • FIG. 30A shows an example of the separate aperture type photoelectric device.
  • a separate aperture type photoelectric device 138 shown in FIG. 30A includes a photoelectric device 140 having a photoelectric layer 60 formed on the lower surface (light emitting surface) of a substrate 134 as a light transmitting member, and a substrate of the photoelectric device 140.
  • An aperture plate also referred to as an aperture member
  • a predetermined clearance gap or gap
  • the sectional shape of the beam irradiated to the photoelectric layer 60 is substantially the same as the shape of the aperture 58a, for example, a rectangular shape elongated in the X-axis direction.
  • the shape of the beam irradiated to the photoelectric layer 60 is somewhat deteriorated (lacks in sharpness) as compared with the aperture integrated type photoelectric elements. It can be moved relative to the element. Therefore, when using a separate aperture type photoelectric device, a drive mechanism capable of moving the aperture plate 142 in the XY plane may be provided.
  • a drive mechanism capable of moving the photoelectric element 140 in the XY plane may be provided. In this case. Instead of moving the aperture plate 142, the photoelectric device 140 and the aperture plate 142 may be moved in a state in which the positional relationship between the two is maintained.
  • the relative position between the aperture plate 142 and the photoelectric element 140 in the XY plane can be shifted. Life can be improved.
  • the aperture plate 142 and the like may be configured to be freely movable in the XY plane. It may also be movable in the projection system 86 i in the XY plane relative to the aperture plate 142.
  • the aperture plate 142 is movable not only in the XY plane but also in the Z-axis direction parallel to the optical axis AXe, tiltable with respect to the XY plane, and rotatable about the Z axis parallel to the optical axis AXe
  • the gap between the photoelectric device 140 and the aperture plate 142 may be adjustable.
  • the drive mechanism for moving the aperture plate 142 may be used as a beam-aperture alignment adjustment device, instead of or in conjunction with the other adjustment devices described above.
  • only a drive mechanism for moving the photoelectric device 140 may be provided. Also in this case, the lifetime of the photoelectric layer 60 can be increased by moving the photoelectric element 140 in the XY plane.
  • the drive mechanism moves only the aperture member in the XY plane, the drive mechanism moves only the photoelectric element in the XY plane, the aperture member and the photoelectric element are integrated and the XY plane You may provide either of the drive mechanisms which move inside. In the case of the former two, the lifetime of the photoelectric layer 60 can be extended.
  • the aperture plate When forming a cut pattern for cutting line patterns having different pitches, the aperture plate may be replaced when the above-described separate aperture type photoelectric device is used.
  • a plurality of apertures may be formed using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.
  • an aperture plate which can be used together with the photoelectric device 140 for forming the separate aperture type photoelectric device with, for example, the photoelectric device 140 shown in FIG. It is also possible to use an aperture plate in which the base material and the light shielding film are integrated, not limited to the type consisting only of the light shielding member having the above.
  • an aperture plate of this type for example, as shown in FIG. 30B, a light shielding film 58 having an aperture 58a by vapor deposition of chromium is formed on the lower surface (light emitting surface) of a base 145 which is a light transmitting member. As shown in FIG.
  • the aperture plate 142a has a base 150 composed of the light transmitting member 146 and the light transmitting film 148, and chromium is deposited on the lower surface (light emitting surface) of the base 150.
  • the aperture plate 142b is provided with the light shielding film 58 having the apertures 58a.
  • the aperture plate 142c is filled with the light transmitting film 148 and the space in the aperture 58a is illustrated.
  • the space in the aperture 58a is one of the substrates 145 which are light transmitting members.
  • Aperture plate 142d which are filled with can be used.
  • the aperture plates 142, 142a, 142b, 142c, 142d can be used upside down.
  • the base materials 134, 145, 146 can also be formed with materials, such as quartz glass which has permeability with respect to the wavelength of the light used by the scientific unit (18 B etc.).
  • the photoelectric elements 54, 54a to 54d and the plurality of apertures 58a of the aperture plates 142, 142a to 142d may all be the same size or the same shape, all sizes of the plurality of apertures 58a May not be the same, and the shape may not be the same for all the apertures 58a.
  • the aperture 58a may be smaller than the size of the corresponding beam so that the corresponding beam is irradiated on the entire area.
  • the separate-aperture type photoelectric element 138 when used, for example, a tensile force in a predetermined direction in the XY plane is applied to the aperture plate 142 to stretch the aperture plate 142 in the XY plane.
  • a tensile force in a predetermined direction in the XY plane is applied to the aperture plate 142 to stretch the aperture plate 142 in the XY plane.
  • a cut pattern that should originally be a rectangle (or a square) long in the X-axis direction, as shown in FIG.
  • CP is rounded like a cut pattern CP ′ at four corners.
  • the light beam is photoelectrically transferred through a non-rectangular aperture 58a 'in which auxiliary patterns 58c are provided at four corners of the aperture 58a formed in the light shielding film 58.
  • the electron beam generated by photoelectric conversion is irradiated onto the wafer through the electron beam optical system 70, so that the irradiation area of the rectangular electron beam different in shape from the non-rectangular aperture 58a 'is placed on the wafer.
  • the shape of the irradiation area of the electron beam and the shape of the cut pattern CP to be formed on the wafer may be the same or different.
  • the aperture of the electron beam irradiation area is made to be approximately the same as the desired shape of the cut pattern CP (for example, a rectangle or square long in the X-axis direction). It is sufficient to decide the shape of 58a '. Use of the aperture 58a 'in this case may not be considered as dose control.
  • the auxiliary pattern 58c need not be provided at all four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided at at least a part of the four corners of the aperture 58a. Further, the auxiliary pattern 58c may be provided at all four corners of the rectangular aperture 58a only in a part of the plurality of apertures 58a 'formed in the light shielding film 58. Further, some of the plurality of apertures formed in the light shielding film 58 may be the apertures 58a ', and the remaining may be the apertures 58a. That is, it is not necessary to make all the shapes of the plurality of apertures 58a 'formed in the light shielding film 58 the same.
  • the shape, size, etc. of the aperture is optimized based on, for example, the characteristics of the electron beam optical system 70 based on the actual exposure result. Is desirable.
  • the shape of each aperture is determined so as to suppress rounding of the corner of the irradiation area on the wafer (target). The influence of the forward scattering component can also be reduced by the aperture shape.
  • the shape of the aperture 58a ' may be the same as the shape of the irradiation region of the electron beam.
  • a light beam having a desired cross-sectional shape is made to enter the photoelectric layer without being affected by the aberration of the projection system between the pattern generator and the photoelectric element.
  • the light is irradiated to the photoelectric layer through a plurality of apertures for reasons such as being able to.
  • a plurality of light beams generated by the pattern generator are irradiated (projected) onto a photoelectric element formed by forming a photoelectric layer on a light emission surface of a base without passing through an aperture by a projection system, for example.
  • the wafer surface may be irradiated with an electron beam optical system.
  • the cut pattern is used to cut the line pattern of the L / S pattern in which the X-axis direction is the periodic direction, so the shape of the irradiation region of the electron beam on the wafer is X
  • the cross-sectional shape of each of a plurality of light beams to be irradiated (projected) on the photoelectric element is set to a rectangular shape long in the X-axis direction so as to be a long shape in the axial direction, for example, a rectangular shape long in the X-axis direction As well.
  • the 45 electron beam optical systems 70 i are configured similarly to each other and function similarly.
  • the present invention is not limited to this, and at least one electron beam optical system includes the remaining The other) at least one electron beam optical system may have a different configuration or function. For example, even if the directions of the optical axes of one electron beam optical system and at least one other electron beam optical system are not the same (parallel to each other), but substantially parallel, for example, at a small angle of 5 degrees or less good.
  • the electron beam optical system 70 i other components which are provided individually corresponding to the 45, for example, the light irradiation device (80 i or 180 i) is also constructed similarly to one another, and shall function similarly However, at least one light irradiator may have a different configuration or function than the remaining at least one light irradiator.
  • the micro drive mechanism 13 i can be controlled based on the current value obtained by detecting the beam current of the electron beam by the beam monitor.
  • position measurement system 28 the relative position measuring system 29, at least part of the measurement information of various measurement systems, such as backscattered electron detector 106, the fine drive mechanism 13 i, the drive system 25, 25A, drive mechanism 604, of course It may be used to control the adjustment devices a, b, c, d, e, etc. described above.
  • the electron beam optical unit 18A is suspended and supported by the suspending and supporting mechanism 600 from the upper frame 101b of the body frame 101 in the above embodiments, but the invention is not limited thereto.
  • the electron beam optical unit 18A may be supported above the floor F via a support frame (not shown).
  • the pattern generator 84 i has been illustrated for the case of construction with GLV, not limited thereto, the pattern generator 84 i, the reflection type liquid crystal display device or a digital micromirror device (DMD A reflective spatial light modulator having a plurality of movable reflective elements such as Digital Micromirror Device) and PLV (Planer Light Valve) may be used.
  • DMD digital micromirror device
  • PLV Planer Light Valve
  • the optical system included in the exposure apparatus 100, 1000, and 2000 has been described as being a multi-column type including a plurality of multi-beam optical systems.
  • the present invention is not limited thereto. It may be a column type multi-beam optical system.
  • the wafer W alone is transported onto the wafer stage WST, and the electron beam is transmitted from the electron beam optical system 70 of the multibeam optical system to the wafer W while moving the wafer stage WST in the scanning direction.
  • the exposure apparatus that performs exposure by performing irradiation has been described, the present invention is not limited to this, and a type of exposure apparatus in which the wafer W is integrated with a table (holder) that can be transported integrally with the wafer called shuttle is also replaced on the stage.
  • the above embodiments (except for the wafer stage WST) can be applied.
  • it is applicable to the apparatus of the single column type which irradiates a single beam to a target.
  • the aperture 58a may not be used if it is possible to irradiate the photoelectric element with a light beam having a desired cross-sectional shape and cross-sectional area. Also in this case, the projection system 86 may not be used.
  • the above-described adjusting device can be used to irradiate the electron beam to a desired position of the target (such as the wafer W). Further, in each of the embodiments described above, a reference mark may be used to confirm whether the electron beam emitted from the electron beam optical system 70 is irradiated at a desired position.
  • the electron beam is irradiated such that the reference mark is irradiated, and the reflected electron is detected by the irradiation to detect the positional relationship between the reference mark and the irradiation position of the electron beam, whereby the desired position of the electron beam is obtained. It can be confirmed.
  • the reference mark may be provided on the reference wafer held by wafer stage WST, or may be provided on wafer stage WST. The wafer may be exposed to confirm whether the electron beam emitted from the electron beam optical system 70 is irradiated at a desired position.
  • position measurement system 28 for measuring the position information of wafer stage WST may also be capable of measuring the position information in the direction of three degrees of freedom in the XY plane.
  • the exposure technology constituting the complementary lithography is not limited to the combination of the liquid immersion exposure technology using an ArF light source and the charged particle beam exposure technology, and, for example, the line and space pattern can be other ArF light source, KrF, etc. It may be formed by a dry exposure technique using a light source.
  • the exposure apparatus 100 forms a fine pattern on a glass substrate to manufacture a mask. It can apply suitably also in the case.
  • an electronic device such as a semiconductor element or the like performs a function / performance design of the device, a step of fabricating a wafer from silicon material, an actual circuit or the like on the wafer by lithography technology or the like.
  • a wafer processing step of forming a semiconductor device a device assembly step (including a dicing step, a bonding step, and a package step), an inspection step, and the like.
  • the wafer processing step is a lithography step (a step of applying a resist (sensitive material) on the wafer, an electron beam exposure apparatus according to the embodiment described above, and exposure of the wafer by the exposure method thereof (a pattern according to designed pattern data)
  • a step of drawing), a step of developing the exposed wafer), an etching step of etching away the exposed member of the portion other than the portion where the resist remains, a resist for removing the unnecessary resist after the etching is completed Include removal steps and the like.
  • the wafer processing step may further include pre-process processing (oxidation step, CVD step, electrode formation step, ion implantation step, etc.) prior to the lithography step, in which case the lithography step corresponds to that of each of the above embodiments.
  • a device pattern is formed on the wafer, so that a highly integrated micro device can be manufactured with high productivity (high yield).
  • the above-described complementary lithography is performed, and at that time, the above-described exposure method is performed using the electron beam exposure apparatus 100, 1000, 2000 of the above embodiments. To produce highly integrated micro devices. It becomes possible.
  • an exposure apparatus using an electron beam has been described.
  • the present invention is not limited to the exposure apparatus, but an apparatus that performs at least one of predetermined processing and predetermined processing on a target using an electron beam such as welding
  • the electron beam apparatus of the above embodiment can be applied to an inspection apparatus using an electron beam.
  • the photoelectric layer 60 is formed of the alkaline photoelectric conversion film
  • the photoelectric layer is not limited to the alkaline photoelectric conversion film.
  • the photoelectric conversion film may be used to form a photoelectric device.
  • shapes such as a member, an opening, and a hole, may be demonstrated using circular, a rectangle, etc., it is needless to say that it is not restricted to these shapes.
  • Reference Signs List 15 support member 17 support member 19 housing (main frame) 29 relative position measurement system 34 first vacuum chamber 39 i valve 46A vacuum pump 46B vacuum pump 54 i ... photoelectric element, 56 ... substrate, 58 ... light shielding film, 58a ... aperture, 70 i ... electron beam optical system, 80 i ... light irradiation device, 82 i ... illumination system, 84 i ... pattern generator, 86 i ... projection System 100 100 Exposure apparatus 101 Body frame 104a i First partial lens barrel 104b i Second partial lens barrel 107a Electromagnetic lens 107b Electromagnetic lens 192 Frame member 192a i Stepped Through hole, 196 i ... tube, 197 ... air passage, 202 i ... piping, EB ... electron beam, LB ... laser beam, W ... wafer.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif d'exposition (100) qui comprend : un système optique lumineux (80i) ; un système optique de faisceau d'électrons (70i) qui transforme des électrons en un faisceau d'électrons et bombarde une cible (W) avec ce dernier, lesdits électrons étant produits à partir d'un élément photoélectrique (54i) suite à une exposition à au moins un faisceau lumineux provenant du système optique lumineux ; un boîtier (19) à l'intérieur duquel est formé un espace sous vide (34) dans lequel une surface d'émission d'électrons de l'élément photoélectrique (54i) est positionnée ; un cadre (17) qui soutient au moins une partie du système optique lumineux ; et un cadre de corps (101) qui soutient le cadre (17).
PCT/JP2017/035576 2017-09-29 2017-09-29 Appareil de faisceau d'électrons, et procédé de fabrication de dispositif Ceased WO2019064519A1 (fr)

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TW107134441A TW201921411A (zh) 2017-09-29 2018-09-28 電子束裝置及元件製造方法

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11798783B2 (en) 2020-01-06 2023-10-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method

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JPH07254539A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 電子ビーム露光装置
JPH10214766A (ja) * 1997-01-29 1998-08-11 Canon Inc 電子ビーム露光装置
JP2005533365A (ja) * 2001-11-07 2005-11-04 アプライド　マテリアルズ　インコーポレイテッド マスクレスの光子−電子スポット格子アレイ印刷装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254539A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 電子ビーム露光装置
JPH10214766A (ja) * 1997-01-29 1998-08-11 Canon Inc 電子ビーム露光装置
JP2005533365A (ja) * 2001-11-07 2005-11-04 アプライド　マテリアルズ　インコーポレイテッド マスクレスの光子−電子スポット格子アレイ印刷装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11798783B2 (en) 2020-01-06 2023-10-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method
US11984295B2 (en) 2020-01-06 2024-05-14 Asml Netherlands B.V. Charged particle assessment tool, inspection method

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