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WO2019146027A1 - Dispositif à faisceau d'électrons, procédé de production de dispositif, et unité à élément photoélectrique - Google Patents

Dispositif à faisceau d'électrons, procédé de production de dispositif, et unité à élément photoélectrique Download PDF

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Publication number
WO2019146027A1
WO2019146027A1 PCT/JP2018/002192 JP2018002192W WO2019146027A1 WO 2019146027 A1 WO2019146027 A1 WO 2019146027A1 JP 2018002192 W JP2018002192 W JP 2018002192W WO 2019146027 A1 WO2019146027 A1 WO 2019146027A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
photoelectric
chamber
unit
beam apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/002192
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English (en)
Japanese (ja)
Inventor
真路 佐藤
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Nikon Corp
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Nikon Corp
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Priority to PCT/JP2018/002192 priority Critical patent/WO2019146027A1/fr
Publication of WO2019146027A1 publication Critical patent/WO2019146027A1/fr
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to an electron beam apparatus, a device manufacturing method, and a photoelectric device unit, and in particular, an electron beam apparatus using a photoelectric device having a photoelectric conversion layer generating electrons by light irradiation, and a device manufacturing using the electron beam device.
  • the present invention relates to a method and a photoelectric device unit used in an electron beam apparatus.
  • complementary lithography has been proposed in which an immersion exposure technique using an ArF light source and a charged particle beam exposure technique (for example, an electron beam exposure technique) are used complementarily.
  • a simple line and space pattern (hereinafter, appropriately abbreviated as an L / S pattern) is formed by utilizing double patterning or the like in immersion exposure using an ArF light source.
  • line patterns are cut or vias are formed through exposure using an electron beam.
  • an electron beam exposure apparatus provided with a multi-beam optical system that turns on and off a beam using a plurality of blanking apertures can be used (see, for example, Patent Document 1).
  • Patent Document 1 an electron beam exposure apparatus provided with a multi-beam optical system that turns on and off a beam using a plurality of blanking apertures.
  • an electron beam apparatus using a photoelectric device having a photoelectric conversion layer that generates electrons by light irradiation, wherein the photoelectric device and electrons generated from the photoelectric device are accelerated.
  • a holder capable of holding a photoelectric device unit having an extraction electrode is provided, and a first chamber capable of evacuating the inside and electrons generated from the photoelectric device are irradiated as an electron beam to a target through the first chamber.
  • An electron beam apparatus is provided.
  • a device manufacturing method including a lithography step, wherein the lithography step includes forming a line and space pattern on a target, and the first aspect and the second aspect.
  • a device manufacturing method including: cutting a line pattern constituting the line and space pattern using an electron beam apparatus according to any of the above.
  • a photoelectric element unit for use in an electron beam apparatus for irradiating an electron beam to a target, comprising a base member on which a photoelectric conversion layer for generating electrons by light irradiation is formed.
  • a photoelectric device unit including a photoelectric device, and a lead-out electrode connected to the base member for accelerating electrons generated from the photoelectric conversion layer.
  • a photoelectric element unit for use in an electron beam apparatus for irradiating an electron beam to a target, comprising a base member on which a photoelectric conversion layer for generating electrons by light irradiation is formed.
  • a photoelectric device unit including a photoelectric device, and a lead-out electrode connected to the base member for accelerating electrons generated from a photoelectric conversion layer formed on the base member.
  • FIG. 1 schematically shows a configuration of an exposure apparatus according to a first embodiment. It is a figure which shows the structure of the electron beam optical system seen from + X direction. It is a figure which expands and shows the photoelectric element unit shown by FIG.
  • FIG. 4A is a partially omitted longitudinal sectional view showing the photoelectric device
  • FIG. 4B is a plan view partially showing the photoelectric device. It is a figure which shows the structure for producing an electrical potential difference between a photoelectric layer and an extraction electrode. It is a figure for demonstrating correction
  • FIG. 8A is a perspective view showing a light diffraction type light valve
  • FIG. 8B is a side view showing the light diffraction type light valve.
  • It is a top view which shows a pattern generator. It is a figure for demonstrating the whole structure of the optical system with which the exposure apparatus of FIG. 1 is provided.
  • FIG. 12A is a diagram for explaining the configuration of a portion related to the deposition of the photoelectric layer and a diagram for explaining the flow of the deposition operation of the photoelectric layer (part 1)
  • FIG. 12C is a drawing for explaining the flow of the deposition operation of the photoelectric layer
  • FIG. 12C is a drawing for explaining the flow of the deposition operation of the photoelectric layer; It is a block diagram which shows the input-output relationship of the main control apparatus which mainly comprises the control system of exposure apparatus.
  • FIG. 7 is a diagram (part 1) for explaining the flow of the recovery operation of the photoelectric device unit;
  • FIG. 17 is a second diagram illustrating the flow of the recovery operation of the photoelectric device unit;
  • FIG. 17 is a third diagram illustrating the flow of the recovery operation of the photoelectric device unit;
  • FIG. 17 is a fourth diagram illustrating the flow of the recovery operation of the photoelectric device unit; It is a figure showing roughly the composition of the exposure device concerning a 2nd embodiment.
  • FIG. 23 (A) is an explanatory view showing a method not using an aperture
  • FIG. 23 (B) is an explanatory view showing a method using an aperture.
  • FIG. 24A to FIG. 24D are views showing various configuration examples of the aperture integrated photoelectric device.
  • 25 (A) and 25 (B) are diagrams (part 1 and part 2) for describing the configuration of a sensor used for positioning of the photoelectric device unit with respect to the holder and the method of using the sensor. It is a figure for describing one embodiment of a device manufacturing method.
  • FIG. 1 schematically shows the structure of an exposure apparatus 100 according to the first embodiment. Since the exposure apparatus 100 is provided with a plurality of electron beam optical systems as described later, hereinafter, the Z axis is parallel to the optical axis of the electron beam optical system and the exposure will be described later in a plane perpendicular to the Z axis
  • the scanning direction in which the wafer W is moved is taken as the Y-axis direction, the direction orthogonal to the Z-axis and Y-axis as the X-axis direction, and the rotational (tilting) directions about the X-axis, Y-axis and Z-axis as ⁇ x, ⁇ y respectively.
  • the description will be made as the and ⁇ z directions.
  • the exposure apparatus 100 includes a stage chamber 10 installed on a pedestal 101 a which is a part of a body frame installed on the floor surface of a clean room, and a stage system 14 disposed in an exposure chamber 12 inside the stage chamber 10. And an optical system 18 disposed above the stage system 14, and a transport system 42 and the like.
  • the optical system 18 comprises an electron beam optical unit 18A and an optical unit 18B disposed thereon.
  • the stage chamber 10 may be installed on the floor surface.
  • the electron beam optical unit 18A includes a housing 19 as a main frame in which a first chamber 34 is formed.
  • the first chamber 34 can be evacuated to a high vacuum state by a vacuum pump (not shown) (see the white arrow in FIG. 1), and becomes a first vacuum chamber after the evacuation is completed.
  • the first chamber 34 in the high vacuum state is referred to as a first vacuum chamber 34.
  • a case 45 in which a second chamber 72 is formed inside is disposed adjacent to the case 19.
  • the second chamber 72 is evacuated independently of the first chamber 34 or together with the first chamber 34 by a vacuum pump (not shown) until the inside of the second chamber 72 is in the same high vacuum state as the first vacuum chamber 34. It is possible.
  • the second chamber 72 may be in a vacuum state higher than the first chamber 34.
  • the second chamber 72 in the high vacuum state is referred to as a second vacuum chamber 72.
  • the transport system 42 is provided in the housing 45. The specific configurations of the optical system 18 and the transport system 42 will be described later.
  • the lower surface of the peripheral portion of the housing 19 faces the upper surface of the upper wall 10a of the stage chamber 10, and the lower surface of the housing 19 and the upper surface of the upper wall 10b of the stage chamber 10 It is connected (sealed) by a surrounding metal bellows 16.
  • the housing 19 is suspended and supported at three points from a top frame (not shown) which is a part of the above-mentioned body frame via a plurality of, for example, three suspension support mechanisms (not shown) having a vibration isolation function. ing. Vibrations such as floor vibrations transmitted from the outside to the body frame are sufficiently absorbed or isolated either by the suspension support mechanism in the direction parallel to the optical axis of the electron beam optical system 70 or in the direction perpendicular to the optical axis. Ru.
  • a non-contact type positioning device 23 (not shown in FIG. 1, see FIG. 13) is provided.
  • the positioning device 23 can be configured to include a six-axis acceleration sensor and a six-axis actuator, as disclosed in, for example, WO 2007/077920.
  • the positioning device 23 is controlled by the main controller 110 (see FIG. 13).
  • the relative positions of the housing 19 (electron beam optical unit 18A) with respect to the body frame in the X axis direction, Y axis direction, Z axis direction, and the relative rotation angles around the X axis, Y axis and Z axis are constant.
  • State predetermined state
  • the positioning device 23 may not be provided.
  • the stage system 14 is supported by a weight plate 22 supported on the bottom wall 10a of the stage chamber 10 shown in FIG.
  • Wafer stage WST movable in the axial direction and Y-axis direction by a predetermined stroke, for example, 50 mm, and finely movable in the remaining four degrees of freedom (Z-axis, ⁇ x, ⁇ y, and ⁇ z directions), and wafer stage WST
  • Stage drive system 26 (only a part of which is shown in FIG. 1, see FIG. 13) for moving the position
  • a position measurement system 28 (not shown in FIG. 1) which measures positional information in the direction of 6 degrees of freedom of wafer stage WST. 13) and.
  • Wafer stage WST adsorbs and holds wafer W via an electrostatic chuck (not shown) provided on the upper surface thereof.
  • Wafer stage WST has a frame-shaped member with an XZ cross section, in which mover 30a of motor 30 having a yoke and a magnet (all not shown) is integrally fixed.
  • a stator 30b of a motor 30 formed of a coil unit extending in the Y-axis direction is inserted into the inside (hollow part) of the mover 30a.
  • the stator 30 b is connected to the X-stage 31 moving in the X-axis direction on the surface plate 22 at both ends in the longitudinal direction (Y-axis direction). As shown in FIG.
  • the X stage 31 has a pair of support portions with the X axis direction as the longitudinal direction and separated by a predetermined distance in the Y axis direction, and the upper surface of the pair of support portions Both ends of the direction are fixed.
  • the X stage 31 is integrated with the wafer stage WST by an X stage drive system 32 (not shown in FIG. 1, refer to FIG. 13) constituted by a uniaxial drive mechanism that does not cause magnetic flux leakage, for example, a feed screw mechanism using a ball screw. Is moved with a predetermined stroke in the X-axis direction.
  • the X stage drive system 32 may be configured by a uniaxial drive mechanism provided with an ultrasonic motor as a drive source. In any case, the influence of the magnetic field fluctuation due to the magnetic flux leakage on the positioning of the electron beam is negligible.
  • the motor 30 can move the mover 30a relative to the stator 30b in the Y-axis direction by a predetermined stroke, for example, 50 mm, and can finely move the mover 30a in the X-axis direction, the Z-axis direction, the ⁇ x direction, the ⁇ y direction, and the ⁇ z direction Closed magnetic field type and moving magnet type motor.
  • a wafer stage drive system that moves wafer stage WST in the direction of six degrees of freedom by motor 30 is configured.
  • the wafer stage drive system will be referred to as wafer stage drive system 30 using the same reference numerals as motor 30.
  • the weight cancellation device 24 includes a metal bellows type air spring (hereinafter abbreviated as air spring) 24a whose upper end is connected to the lower surface of the wafer stage WST, and a base slider 24b connected to the lower end of the air spring 24a. have.
  • the base slider 24b is provided with a bearing (not shown) for spouting the air inside the air spring 24a to the upper surface of the platen 22, and the bearing surface of the pressurized air ejected from the bearing and the upper surface of the platen 22.
  • the weight cancellation device 24, the wafer stage WST (including the mover 30a), and the own weight of the wafer W are supported by the static pressure (pressure in the gap) between them.
  • compressed air is supplied to the air spring 24 a through a pipe (not shown) connected to the wafer stage WST.
  • the base slider 24b is supported in a non-contact manner on the surface plate 22 via a kind of differential pumping type of static air bearing, and the air ejected from the bearing portion toward the surface plate 22 is exposed to the surrounding (exposure chamber 12) are prevented from leaking out.
  • a pair of pillars are provided sandwiching air spring 24a in the Y-axis direction, and a plate spring provided at the lower end of the pillar is connected to air spring 24a.
  • the electron beam optical unit 18A includes the aforementioned housing 19 in which a first vacuum chamber 34 is formed.
  • the first vacuum chamber 34 includes a first plate 36 constituting an upper wall (ceiling wall) of the housing 19, a second plate (hereinafter referred to as a base plate) 38 constituting a bottom wall of the housing 19, and a first vacuum chamber 34. It is divided by a side wall portion 40 or the like connecting the lower surface of the plate 36 and the upper surface of the base plate 38.
  • a plurality of through holes 36a extending in the Z-axis direction are formed at predetermined intervals in the two-dimensional directions of the XY, here 45 in an arrangement corresponding to the arrangement of the 45 electron beam optical systems 70 described above. .
  • the holding member 52 is disposed with almost no gap.
  • each of the plurality of holding members 52 holds a partition member 81 made of a light transmitting member such as quartz glass which functions as a vacuum partition.
  • the partition member 81 is suitably described also as the vacuum partition 81.
  • FIG. The partition member 81 may be held by the first plate 36 without using the holding member 52. Further, the material of the light transmitting member constituting the partition member 81 is not limited to quartz glass, and any material having transparency to the wavelength of light used in the optical unit 18B may be used.
  • a holder 88 in which an opening (notch) 88a is formed is disposed under each of the plurality of holding members 52.
  • the holder 88 is fixed to the inner wall surface of the through hole 36 a of the first plate 36.
  • the holder 88 is a member to which a photoelectric device unit 50 described later is loaded, and holds the loaded photoelectric device unit 50.
  • the holder 88 is fixed to the inner wall surface of the through hole 36 a, but the holder 88 may be provided on the lower surface of the first plate 36.
  • the photoelectric element 54 provided in the photoelectric element unit 50 may not be held in the through hole 36a, and may be held below the through hole 36a, for example.
  • FIG. 3 corresponds to a longitudinal sectional view of the photoelectric device unit 50 sectioned at the center position in the depth direction (X-axis direction).
  • the photoelectric device unit 50 includes a photoelectric device 54 having a base member 53 on which a layer (alkali photoelectric conversion layer (alkali photoelectric layer)) 60 of an alkali photoelectric film (photoelectric conversion film) generating electrons by irradiation of light is formed; And an extraction electrode 55 connected to the base member 53 for accelerating electrons generated from the alkaline photoelectric layer 60.
  • a layer alkali photoelectric conversion layer (alkali photoelectric layer)
  • an alkali photoelectric film photoelectric conversion film
  • the base member 53 is made of, for example, a base material 56 (also called reticle blanks) made of quartz glass and its base material 56.
  • a light shielding film (aperture film) 58 made of, for example, vapor-deposited chromium is provided on the surface (lower surface) on the light emission side.
  • the base 56 may be called a light transmitting member or a transparent member.
  • a large number of apertures 58 a are formed in the light shielding film 58.
  • the extraction electrode 55 is fixed to one surface (the lower surface in FIG. 3) of the base material 56, whereby the photoelectric device 54 and the extraction electrode 55 are integrated to constitute the photoelectric device unit 50.
  • the material of the substrate 56 is not limited to quartz glass, and may be, for example, a material having transparency to the wavelength of light used in the optical unit 18B, such as sapphire.
  • the extraction electrode 55 may be fixed to the side surface of the base 56. Further, the extraction electrode 55 may be fixed to a member (non-light transmitting member or non-transparent member) connected to the lower surface or the side surface of the base material 56.
  • the alkaline photoelectric layer 60 is formed by vapor deposition on the surface on the light emission side on which the light shielding film (aperture film) 58 of the base member 53 is formed (the lower surface in FIG. 4A and FIG. 3). Although only a part of the photoelectric element 54 is shown in FIG. 4A, in practice, a large number of apertures 58a are formed in the light shielding film 58 in a predetermined positional relationship (see FIG. 4A). 4 (B)).
  • the number of apertures 58a may be the same as the number of multi beams described later, or may be larger than the number of multi beams.
  • the alkaline photoelectric layer 60 is also disposed inside the aperture 58a, and the base 56 and the alkaline photoelectric layer 60 are in contact at the aperture 58a.
  • the base member 53 (the base 56, the light shielding film 58) and the alkali photoelectric layer 60 are integrally formed, and at least a part of the photoelectric element 54 is formed.
  • the alkali photoelectric layer 60 is a multi-alkali photocathode using two or more types of alkali metals.
  • the multialkali photocathode is a photocathode characterized by high durability, capable of generating electrons with green light having a wavelength of 500 nm band, and high quantum efficiency QE of the photoelectric effect of about 10%.
  • a material having a high conversion efficiency of 10 [mA / W] is used.
  • the electron emission surface of the alkaline photoelectric layer 60 is the lower surface in FIG. 4A, that is, the surface on the opposite side to the upper surface of the base material 56.
  • the extraction electrode 55 is disposed substantially in parallel on one surface (lower surface in FIG. 3) of the base member 53 (base 56) at a predetermined interval in a direction (vertical direction) perpendicular to the one surface.
  • a sheet of electrode plates 59A, 59B is included.
  • the electrode plates 59A, 59B are formed in a ring shape, but may be formed in a polygonal loop shape.
  • through holes are formed at four places forming respective vertices of a virtual square having two sides extending respectively in the X-axis direction and the Y-axis direction in plan view, and inside each through hole Support members 57 extending in the vertical direction are respectively inserted.
  • each of the four support members 57 is fixed to one surface of the base material 56, and the other end (lower end) is fixed to the upper surface of the lower electrode plate 59B.
  • Mounted parallel to the The electrode plate 59A is attached to the four support members 57 so as to be parallel to the base 56 and the electrode plate 59B.
  • the support of the electrode plates 59A and 59B is not limited to the above-described structure.
  • the extraction electrode 55 may be equipped with one or three or more electrode plates.
  • a light shielding film 58 and an alkaline photoelectric layer (hereinafter abbreviated as a photoelectric layer) 60 are laminated and formed on part of the lower surface of the base material 56.
  • the base 56 is a square plate member whose one side is longer than the outer diameter of the electrode plates 59A, 59B.
  • the base 56 may not be square, and may be, for example, a circular plate member having a diameter larger than the outer diameter of the electrode plate.
  • three spheres or hemispheres (balls in the present embodiment) 92 for example, each position (the same circumscribed tangent) of three vertices of a substantially equilateral triangle in plan view One each (a total of three, but in FIG. 5, one ball located at the back of the paper surface is not shown) is provided at each position on the circle.
  • three triangular pyramid grooves 56a (but one triangular pyramid groove located on the back side of the drawing sheet in FIG. 5 is not shown in the positional relationship corresponding to the three balls 92). ) Is formed.
  • Three balls 92 can be engaged with the three triangular pyramid grooves 56a, and the three triangular pyramid grooves 56a, together with the three balls 92, constitute a kinematic mount (also referred to as a kinematic coupling).
  • the photoelectric device unit 50 When the photoelectric device unit 50 is loaded on the holder 88, the photoelectric device unit 50 is moved to a position where the three triangular pyramid grooves 56a substantially face the three balls 92 above the holder 88, The element unit 50 is lowered. As a result, each of the three balls 92 individually engages with the three triangular pyramid grooves 56a, and the photoelectric device unit 50 is attached to the holder 88. At the time of this attachment, the three balls 92 engage with the corresponding triangular pyramid grooves 56a in almost the same state at all times.
  • the photoelectric device unit 50 can be easily removed (removed) from the holder 88 simply by moving the photoelectric device unit 50 upward and releasing the engagement between the ball 92 and the triangular pyramid groove 56a. That is, in the present embodiment, a kinematic mount is constituted by a set of three balls 92 and a triangular pyramid groove 56a, and the attachment state of the photoelectric element unit 50 to the holder 88 is almost always the same by this kinematic mount. It is possible to set (set a fixed positional relationship between the photoelectric element 54 and the holder 88).
  • a movable triangular pyramid groove member may be provided instead of forming three triangular pyramid grooves in the lower surface of the base 56. In this case, when the photoelectric device unit 50 is moved to a position where the photoelectric device 54 faces above the holder 88 when the photoelectric device unit 50 is mounted on the holder 88, the position of the photoelectric device 54 with respect to the holder 88 is desired.
  • the fixed positional relationship between the photoelectric element 54 and the holder 88 can be obtained only by attaching the photoelectric element unit 50 to the holder 88 via the kinematic mount (a set of three balls 14 and a triangular pyramid groove member). It can be set with good reproducibility.
  • the holder 88 When the photoelectric conversion unit 55 is attached to the holder 88 or the photoelectric conversion unit 55 is removed from the holder 88, the holder 88 is movable (vertically movable) in the Z-axis direction with respect to the first plate 36. The holder 88 may be moved in the Z-axis direction.
  • the first wiring 62A has one end connected to the photoelectric layer 60 and the other end slightly exposed from the lower end surface of the base 56, and the electrode plate 59A. , 59B, and a second wiring 62B and a third wiring 62C are provided, the other ends of which are slightly exposed from the lower end surface of the base material 56.
  • the electrical connection part (unit side contact) of the photoelectric device unit 50 is configured by the exposed part from the base 56 of the other end of each of the first, second and third wires 62A, 62B and 62C.
  • the electrical connection portion includes a first connection portion (first contact) electrically connected to the photoelectric layer 60, and a second connection portion (second contact) electrically connected to the electrode plate 59A of the lead-out electrode 55. And a third connection portion (third contact point) electrically connected to the electrode plate 59B of the lead-out electrode 55.
  • the holder 88 has a U-shape in a side view corresponding to the first, second and third wires 62A, 62B and 62C (first, second and third contacts).
  • One end (lower end in FIG. 5) of the three electrical contacts 66A, 66B, 66C is a voltage source 64 1 64 2 63 3 (FIG. 5) via fourth, fifth and sixth wires 62D, 62E, 62F respectively.
  • Each applied voltage is individually connected to V 1 , V 2 , and V 3 ).
  • the photoelectric conversion device 54 (photoelectric conversion device unit 50) is supported by the holder 88 via the kinematic mount in a state where the predetermined positional relationship between the photoelectric conversion device 54 and the holder 88 is set as described above.
  • the first connection (first contact), the second connection (second contact) and the third connection (third contact) of the photoelectric device unit 50. ) are connected to each other, and a voltage V 1 is applied to the photoelectric layer 60 and a voltage V 2 is applied to the electrode plate 59A so that a potential difference is generated such that electrons emitted from the photoelectric layer 60 are accelerated toward the electron optical system 70.
  • the voltage V 3 to the electrode plate 59B is adapted to be applied respectively.
  • the voltage V 1 can be 58 keV
  • the voltage V 2 can be 59 keV
  • the voltage V 3 can be 61 keV.
  • the voltage V 1 can be ⁇ 60 keV
  • the voltage V 2 can be ⁇ 59 keV
  • the voltage V 3 can be ⁇ 58 keV.
  • a first wiring portion connected to the first connection portion (first contact point) including the electric contact 66A and the fourth wiring 62D is configured, and an electric contact 66B and a fifth wiring 62E are included.
  • a second wiring portion connected to the second connection portion (second contact), and includes the electrical contact 66C and the sixth wiring 62F, and is connected to the third connection portion (third contact) 3 Wiring part is configured.
  • the first connection portion and the first wiring portion are connected, the second connection portion and the second wiring portion are connected, and the third connection portion and the third wiring portion are connected, whereby the holder 88 is connected to the holder 88.
  • a potential difference is generated between the held photoelectric conversion layer and the extraction electrode 55 (electrode plates 59A, 59B).
  • an electric wiring portion electrically connected to the electric connection portion of the photoelectric device unit 50 held by the holder 88 is configured including the first wiring portion, the second wiring portion, and the third wiring portion. Note that one of the electrode plates 59A and 59B, one of the second connection portion and the third connection portion, and one of the second wiring portion and the third wiring portion do not necessarily have to be provided.
  • FIG. 2 is a view showing the electron beam optical system 70 and components inside the casing 19 individually corresponding to the electron beam optical system.
  • the opening 38a is opened and closed by a valve 39 as can be seen from FIGS. 1 and 2.
  • the openings 38a (valves 39) of 45 can be simultaneously opened and closed by the operation member 41 capable of reciprocating in the Y-axis direction shown in FIG.
  • the movement of the operation member 41 is performed by, for example, a pneumatic (or electromagnetic) first drive unit 46 under the main controller 110 (see FIG. 13).
  • the vacuum degree of the exposure chamber 12 inside the stage chamber 10 is measured by a vacuum gauge (pressure gauge for measuring a vacuum) 37, and the measurement value of the vacuum gauge 37 is supplied to the main controller 110 (see FIG. 13). .
  • valve 39 for opening and closing the opening 38a of 45 is normally open, when it is detected that the degree of vacuum in the exposure chamber 12 is abnormal based on the measurement value from the vacuum gauge 37, etc.
  • the main control unit 110 controls the first drive unit 46 to move the operation member 41 in the -Y direction in order to protect the photoelectric layer 60 of the photoelectric element 54 present inside the first vacuum chamber 34.
  • the 45 valves 39 can be closed simultaneously.
  • the electron beam optical system 70 On the lower surface of the base plate 38, as shown in FIG. 1, 45 electron beam optical systems 70 whose optical axes AXe are positioned on the central axes of 45 holding members 52 are fixed in a suspended state .
  • the support of the electron beam optical system 70 is not limited to this.
  • the electron beam optical system 70 of 45 may be supported by a support member different from the base plate 38 and the support member may be supported by the housing 19 .
  • the electron beam optical system 70 has an objective lens consisting of a lens barrel 104 and a pair of electromagnetic lenses 70a and 70b held by the lens barrel 104, and an electrostatic multipole 70c.
  • the objective lens of the electron beam optical system 70 and the electrostatic multipole 70 c irradiate a plurality of light beams LB to the photoelectric element 54 to emit electrons (plurality of electron beams EB) by photoelectric conversion by the photoelectric layer 60. It is located on the beam path.
  • the lens barrel 104 may be called a housing 104.
  • the pair of electromagnetic lenses 70a and 70b are disposed in the vicinity of the upper end and the lower end in the lens barrel 104, respectively, and they are separated in the vertical direction.
  • An electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b.
  • the electrostatic multipole 70c is disposed in the beam waist portion on the beam path of the electron beam EB focused by the objective lens. For this reason, the plurality of beams EB passing through the electrostatic multipole 70c may repel each other by the coulomb force acting between them, and the magnification may change.
  • An electrostatic multipole 70 c having a second electrostatic lens 70 c 2 is provided inside the electron beam optical system 70.
  • each of the first electrostatic lens 70c 1 and the second electrostatic lens 70c 2 is, irradiation position control of the XY magnification correction and the electron beam (and the irradiation position shift correction) may be performed.
  • the electrostatic lens 70c 1 may be allowed to the axial direction of the magnification adjustment different from the X-axis direction and the Y-axis direction. Further, it may be omitted first electrostatic lens 70c 1 and one of the second electrostatic lens 70c 2, an electrostatic multipole 70c may also have additional electrostatic lenses.
  • the second electrostatic lens 70c 2 corrects the irradiation position displacement of the beam due to various vibrations and the like (the projection position shift of the cut pattern to be described later) at once.
  • the second electrostatic lens 70c 2 is deflection control of the electron beam for performing the following control for the wafer W of the electron beam during exposure, i.e., it is also used for the irradiation position control of the electron beam.
  • the electrostatic multipole 70c is replaced with a static light capable of controlling the electron beam deflection.
  • An electrostatic deflection lens consisting of an electrostatic lens may be used.
  • the reduction magnification of the electron beam optical system 70 is, for example, 1/50 in design without performing magnification correction.
  • Other scaling factors such as 1/30 and 1/20 may be used.
  • the lens barrel 104 has a plurality of openings.
  • the inside of the lens barrel 104 is in communication with the exposure chamber 12 inside the stage chamber 10 shown in FIG.
  • the exposure chamber 12 is a vacuum chamber having a lower degree of vacuum (higher pressure) than the first vacuum chamber 34.
  • the inside of the lens barrel 104 is, for example, a first portion of a central portion through which the electron beam passes through the first vacuum chamber 34 by a partition member 107 made of, for example, a stainless steel piping member.
  • a space 71a and a second space 71b surrounding the first space 71a and in which the electromagnetic lenses 70a and 70b are accommodated are separated.
  • the second space 71 b communicates with the exposure chamber 12.
  • the electrostatic multipole 70c needs to be disposed in the high vacuum space, and therefore, is disposed in the first space 71a.
  • the first space 71 a can also be called a path of the electron beam EB of the electron beam optical system 70.
  • the passage of the electron beam EB of the electron beam optical system 70 is from the first vacuum chamber 34 in which the photoelectric element 54 (photoelectric element unit 50) is disposed with the valve 39 open. It is a passage through which the electron beam EB passes.
  • the first space 71a will also be appropriately referred to as a passage 71a of the electron beam EB.
  • the interior of the chamber 71a is fluidly separated or separated so that no gas flow occurs between the first vacuum chamber 34 and the passage 71a of the electron beam EB.
  • the degree of vacuum in the first vacuum chamber 34 and the degree of vacuum in the passage 71 a of the electron beam EB from the first vacuum chamber 34 to the exposure chamber 12 may be different.
  • the first vacuum chamber 34 and the above-mentioned electron beam passage 71a may be substantially one vacuum chamber without providing a valve or the like.
  • the lens barrel 104 has a highly airtight structure, the inside of which is surrounded by the first space at the center (the path of the electron beam EB of the electron beam optical system 70) and the periphery of the first space, and the electromagnetic lens is housed inside
  • the second space may be separated into a second space in which 70a and 70b are stored, and the second space may be opened to a space outside the stage chamber 10, for example.
  • the paths of the electron beams EB of each of the at least two electron beam optical systems 70 can also be referred to as a first path, a second path, etc , And the inside of the at least two passages 71a can be evacuated independently of the first vacuum chamber 34 by a vacuum pump.
  • the exit 104a of the electron beam is formed at the exit end of the partition member 107 (the exit end of the lens barrel 104), and the backscattered electron detecting device 106 is formed below the exit 104a.
  • the backscattered electron detector 106 sandwiches the optical axis AXe of the electron beam optical system 70 (coincident with the central axis of the holding member 52 and the optical axis AXp of the projection system described later (see FIG. 7)) on both sides in the Y axis direction.
  • a pair of backscattered electron detectors 106y 1 and 106y 2 are provided.
  • a pair of backscattered electron detectors 106 x 1 and 106 x 2 are provided on both sides of the optical axis AXe in the X axis direction.
  • Each of the two pairs of backscattered electron detection devices 106 is formed of, for example, a semiconductor detector, and detects and detects a reflected component generated from a detection target mark such as an alignment mark or a reference mark on a wafer.
  • a detection signal corresponding to the reflected electrons is sent to the signal processing unit 108 (see FIG. 13).
  • the signal processing unit 108 amplifies the detection signals of the plurality of backscattered electron detection units 106 by an amplifier (not shown) and then performs signal processing, and sends the processing result to the main control unit 110 (see FIG. 13).
  • the backscattered electron detection device 106 may or may not be provided only on a part (at least one) of the 45 electron beam optical systems 70.
  • the optical axis AXe of the electron beam optical system 70 should be drawn between the photoelectric element 54 and the wafer W, but in FIG. There is.
  • the backscattered electron detectors 106 x1 , 106 x2 , 106 y1 , and 106 y2 are attached to the lens barrel 104, for example.
  • a cooling plate having openings individually facing the outlets 104a of the plurality of lens barrels 104 is provided, and the backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 are provided in the openings of the cooling plate. It may be arranged. In this case, the backscattered electron detector may be attached to the cooling plate.
  • the top surface of the base plate 38 in the first chamber 34 is accelerated toward the electron beam optical system 70 by the lead-out electrode 55 provided in the photoelectric element unit 50 held by the holder 88.
  • Another extraction electrode 112 is provided to further accelerate the electrons.
  • the extraction electrode 112 has, for example, a plurality of ring-shaped (three in the present embodiment) electrode plates arranged at a predetermined interval in the Z-axis direction.
  • the extraction electrodes 112 are provided 45 corresponding to the 45 electron beam optical systems 70 individually (see FIG. 1). In FIG. 1 and the like, the extraction electrode 112 and the like are shown in a simplified manner.
  • the extraction electrode 112 is disposed below the holding position of the photoelectric element 54. Note that the extraction electrode 112 may be supported by the first plate 36. Further, the extraction electrode 112 may not be provided.
  • the optical unit 18 B includes 45 light irradiation devices (also referred to as light optical systems) 80 provided corresponding to the 45 electron beam optical systems 70 (photoelectric elements 54). Is equipped. At least one light beam from each light emitting device 80 is applied to the photoelectric layer 60 via the corresponding aperture 58a of the photoelectric element 54.
  • the number of light irradiation devices 80 and the number of photoelectric elements 54 (photoelectric element units 50) may not be equal. Therefore, the light irradiation device 80 may not necessarily correspond to the electron beam optical system 70 individually. For example, the number of light irradiation devices 80 may be larger than the number of photoelectric elements 54 (photoelectric element units 50).
  • FIG. 7 shows the light emitting device 80 of FIG. 1 together with the photoelectric device unit 50 held by the corresponding holder 88.
  • the light irradiation device 80 includes an illumination system 82, an optical device (hereinafter referred to as a pattern generator) 84 that generates a plurality of light beams (patterned light) with light from the illumination system 82, and a plurality of patterns from the pattern generator 84.
  • a projection system also referred to as a projection optical system
  • 86 for irradiating the photoelectric conversion element 54 with the light beam of (1) through the vacuum dividing wall 81.
  • the pattern generator 84 may be referred to as a spatial light modulator that spatially modulates and emits at least one of the amplitude, phase, and polarization state of light traveling in a predetermined direction. It can also be said that the pattern generator 84 can generate an optical pattern consisting of, for example, light and dark patterns.
  • the illumination system 82 forms a light source 82a that generates illumination light (laser light) LB, and the illumination light LB into one or more beams having a rectangular cross section elongated in the X-axis direction.
  • a reflecting optical system such as a prism or a mirror having a reflecting surface 98a disposed between the forming optical system 82b and the forming optical system 82b and the pattern generator 84 for deflecting the light from the forming optical system 82b toward the pattern generator 84 And an element 98.
  • the light source 82 a, the shaping optical system 82 b, and the reflection optical element 98 are held by a lens barrel 83.
  • the lens barrel 83 may be called a housing 83.
  • a laser diode that continuously oscillates a visible light or a wavelength near the visible light for example, a laser beam having a wavelength of 405 nm is used.
  • a laser diode that intermittently emits (oscillates) laser light may be used as the light source 82a.
  • a combination of a laser diode and a switching element such as an AO deflector or an AOM (acousto-optic modulator) may be used in place of the light source 82a to intermittently emit laser light.
  • the illumination system 82 may not include the light source 82a, and the light source may be provided outside the apparatus. In this case, illumination light from a light source outside the apparatus may be guided to the illumination system 82 using a light transmission member such as an optical fiber.
  • the shaping optical system 82b includes a plurality of optical elements sequentially disposed on the light path of a laser beam (hereinafter, appropriately abbreviated as a beam) LB from the light source 82a.
  • the plurality of optical elements can include, for example, a diffractive optical element (also referred to as DOE), a lens (for example, a condenser lens), a mirror, and the like.
  • the shaping optical system 82b includes, for example, a diffractive optical element located at the incident end
  • the beam LB is on the emission surface side of the diffractive optical element
  • In-plane intensity of the laser beam LB so as to have a large light intensity distribution in a plurality of rectangular regions (in the present embodiment, elongated slits) long in the X-axis direction aligned at predetermined intervals in the Y-axis direction on a predetermined surface. Transform the distribution.
  • the diffractive optical element generates a plurality of rectangular beams (slit-like beams) LB having a plurality of rectangular cross sections elongated in the X-axis direction aligned at predetermined intervals in the Y-axis direction by incidence of the beam LB from the light source 82a. .
  • a number of slit beams LB according to the configuration of the pattern generator 84 are generated.
  • the element for converting the in-plane intensity distribution of the laser beam LB is not limited to the diffractive optical element, and may be a refractive optical element or a reflective optical element, or may be a spatial light modulator.
  • the light beam incident on the reflective optical element 98 may not be a beam having a rectangular cross section (slit shape).
  • the light beam is emitted below the final lens 96 located at the end of the shaping optical system 82b (light emission side)
  • a reflective optical element 98 for bending the optical path is disposed.
  • the final lens 96 condenses a plurality of cross-sectional rectangular (slit-like) beams LB generated by the diffractive optical element in the Y-axis direction, and irradiates the reflective surface 98 a of the reflective optical element 98.
  • a condensing lens such as a cylindrical lens long in the X-axis direction can be used.
  • a reflective optical member such as a focusing mirror or a diffractive optical element may be used.
  • the reflecting surface 98a is not limited to a flat surface, and may have a shape having a curvature. If the reflecting surface 98a has a curvature (having a finite focal length), it can also have the function of a condenser lens.
  • the reflective optical element 98 may be movable (the position, the inclination, the attitude, and the like can be changed) with respect to the optical axis AXi of the illumination system 82.
  • the reflecting surface 98a is disposed at a predetermined angle ⁇ ( ⁇ is, for example, +10 degrees) inclined with respect to the XY plane, and reflects the plurality of irradiated slit-like beams in the upper left direction in FIG.
  • the shaping optical system 82 b and the reflective optical element 98 constitute an illumination optical system.
  • the reflective optical element 98 is held at the lower end portion of the above-mentioned lens barrel 83 via a holding member.
  • the pattern generator 84 is disposed on the reflected light path of the plurality of slit-like beams reflected by the reflecting surface 98a.
  • the pattern generator 84 is disposed at a predetermined angle ⁇ with respect to the XY plane, and the circuit board 102 whose both ends in the longitudinal direction are exposed to the outside of the lens barrel 83 through the opening (not shown) of the lens barrel 83 It is disposed on the Z-side surface.
  • the circuit board 102 is formed with an opening which is a passage of the beam LB irradiated from the shaping optical system 82b to the reflection surface 98a.
  • a heat sink (not shown) for heat dissipation may be disposed opposite to the + Z side of the circuit board 102.
  • the heat sink is connected to the circuit board 102 via a plurality of connection members (not shown).
  • the heat sink may be fixed to the lens barrel 83 in a state in which the surface (the surface on the + Z side) opposite to the surface facing the circuit board is in contact with the lens barrel 83.
  • a Peltier element may be used as the connection member.
  • the pattern generator 84 and the circuit board 102 can be cooled by the heat radiation through the heat sink.
  • symbol 103 shows wiring.
  • the pattern generator 84 may be disposed at the position where the reflective optical element 98 is disposed, and the reflective optical element 98 may be disposed at the position where the pattern generator 84 is disposed.
  • a pattern generator 84 is disposed on the upper surface of the substrate 102, and a plurality of light beams generated from the pattern generator by irradiation of illumination light are reflected by the reflective optical element 98 disposed on the + Z side of the substrate 102 to The light beam may be led to the projection system 86 through the aperture of.
  • the pattern generator 84 is configured by a light diffraction type light valve (GLV (registered trademark)) which is a kind of programmable spatial light modulator.
  • the light diffraction type light valve is a minute structure of silicon nitride film called “ribbon” on a silicon substrate (chip) 84 a (hereinafter referred to as “ribbon” and “ribbon”). It is a spatial light modulator in which a scale of several thousand is used to form a reference 84b.
  • the driving principle of GLV is as follows.
  • the GLV By electrically controlling the deflection of the ribbon 84b, the GLV functions as a programmable diffraction grating, and has high resolution, high speed (responsiveness 250 kHz to 1 MHz), high accuracy, dimming, modulation, and laser light Enable switching. GLVs are classified as micro-electro-mechanical systems (MEMS).
  • the ribbon 84 b is made of an amorphous silicon nitride film (Si 3 N 4 ) which is a kind of high temperature ceramic having strong characteristics in hardness, durability, and chemical stability. Each ribbon has a width of 2 to 4 ⁇ m and a length of 100 to 300 ⁇ m.
  • the ribbon 84b is covered with an aluminum thin film, and has the function of both a reflector and an electrode.
  • the ribbon is stretched across the common electrode 84c, and when a control voltage is supplied to the ribbon 84b from a driver (not shown in FIGS. 8A and 8B), the ribbon is bent toward the substrate 84a by static electricity. .
  • the control voltage is lost, the ribbon 84b returns to its original state due to the high tension inherent to the silicon nitride film. That is, the ribbon 84b is a kind of movable reflective element.
  • GLV GLV
  • an active ribbon whose position changes due to the application of voltage
  • a type where a bias ribbon falling to the ground and whose position is invariable alternates and a type in which all are active ribbons.
  • the latter type is used in the form.
  • the pattern generator 84 made of GLV is attached to the surface on the ⁇ Z side of the circuit board 102.
  • the circuit board 102 is provided with a CMOS driver (not shown) for supplying a control voltage to the ribbon 84 b.
  • a pattern generator 84 including a CMOS driver is referred to.
  • the pattern generator 84 used in the present embodiment has, as shown in FIG. 9, an XY plane in which a ribbon row 85 having, for example, 6000 ribbons 84b has its longitudinal direction (direction in which the ribbons 84b are aligned) as the X-axis direction.
  • a ribbon row 85 having, for example, 6000 ribbons 84b has its longitudinal direction (direction in which the ribbons 84b are aligned) as the X-axis direction.
  • 12 rows are formed on the silicon substrate at predetermined intervals in a direction forming a predetermined angle ⁇ (hereinafter referred to as the ⁇ -axis direction for convenience).
  • the ribbons 84b of each ribbon row 85 are stretched on the common electrode.
  • each ribbon 84 b is driven for switching (on / off) of the laser light by application and cancellation of application of a constant level voltage.
  • the GLV can adjust the diffracted light intensity according to the applied voltage
  • the applied voltage is finely adjusted when the intensity of at least a part of the plurality of beams from the pattern generator 84 needs to be adjusted.
  • a plurality of light beams having different intensities can be generated from pattern generator 84.
  • twelve slit-like beams are generated by the diffractive optical element in the illumination system 82, and the twelve beams form a plurality of optical elements (including the final lens 96) constituting the forming optical system 82b,
  • a slit-like beam LB long in the X-axis direction is irradiated to the center of each ribbon row 85 via the reflection surface 98 a of the reflection optical element 98.
  • the irradiation area of the beam LB to each ribbon 84b is a square area.
  • the irradiation area of the beam LB to each ribbon 84b may not be a square area. It may be a rectangular region long in the X axis direction or long in the ⁇ axis direction.
  • the irradiation area (illumination area of the illumination system 82) of the 12 beams on the light receiving surface of the pattern generator 84 has a length in the X axis direction of S mm and a length in the ⁇ axis direction of T mm. It can be said that it is a rectangular area.
  • 72000 apertures 58 a are formed in the light shielding film 58 of the photoelectric element 54 so that the 72000 beams generated by the pattern generator 84 can be individually irradiated.
  • the number of apertures 58a need not be the same as the number of beams that can be irradiated by, for example, the pattern generator 84.
  • a photoelectric element 54 includes apertures 58a to which 72000 beams (laser beams) correspond.
  • the number of movable reflective elements (ribbons 84b) included in the pattern generator 84 may be different from the number of apertures 58a.
  • the size of each of the plurality of apertures 58a on the photoelectric element 54 may be smaller than the size of the cross section of the corresponding beam.
  • the number of movable reflective elements (ribbons 84 b) included in the pattern generator 84 may be different from the number of beams generated by the pattern generator 84.
  • a plurality of (two) movable reflective elements (ribbons) 1 The switching of a book beam may be performed. Further, the number of pattern generators 84 and the number of photoelectric elements 54 may not be equal.
  • the plurality of beams generated by the pattern generator 84 are incident on the lower projection system 86, ie, the first lens 94 located at the incident end of the projection system 86, as shown in FIG.
  • the projection system 86 has a plurality of lenses sequentially disposed on the light path of the light beam from the pattern generator 84, as shown in FIG.
  • the plurality of lenses of the projection system 86 are held by a lens barrel 86a.
  • the projection magnification of the projection system 86 is, for example, about 1 ⁇ 4.
  • the aperture 58a is assumed to be rectangular, but may be square, or may be another shape such as a polygon or an ellipse.
  • the projection system is not limited to the refractive optical system, and may be a reflective optical system or a catadioptric optical system.
  • the projection magnification of the projection system 86 is not limited to 1 ⁇ 4 reduction magnification, and may be, for example, 1 ⁇ 5 or 1/10 reduction magnification, or equal magnification or enlargement magnification.
  • the projection system 86 projects (or irradiates) the light from the pattern generator 84 onto the photoelectric element 54 through the vacuum barrier 81 to form at least one of a plurality of, for example, 72000 apertures 58a.
  • the light beam that has passed through is irradiated onto the photoelectric layer 60. That is, the light beam from the movable reflective element turned on from the pattern generator 84 is irradiated to the photoelectric layer 60 through the corresponding aperture 58a, and from the movable reflective element turned off, the corresponding aperture 58a and photoelectric Layer 60 is not illuminated.
  • the aperture 58a is assumed to be a rectangle long in the X-axis direction unless otherwise specified. However, the aperture 58a may be a rectangle or square long in the Y-axis direction, or other polygons, ellipses, etc. It may be a shape.
  • the projection system 86 may be provided with an optical characteristic adjustment device capable of adjusting the optical characteristic of the projection system 86.
  • the optical property adjusting apparatus can change at least the projection magnification (magnification) in the X-axis direction by moving some of the optical elements constituting the projection system 86, for example, a lens in this embodiment.
  • the optical characteristic adjustment device for example, a device that changes the air pressure in the hermetic space formed between the plurality of lenses constituting the projection system 86 may be used.
  • a device for deforming an optical member constituting the projection system 86 or a device for giving a heat distribution to an optical member constituting the projection system 86 may be used.
  • all of the 45 light irradiation devices 80 are provided with an optical characteristic adjustment device.
  • the optical characteristic adjustment device 45 is controlled by the control unit 11 based on the instruction of the main control device 110 (see FIG. 13). Note that the optical characteristic adjustment device may be provided to only a part (one or two or more) of the plurality of light irradiation devices 80.
  • an intensity modulation element capable of changing the intensity of at least one of the plurality of beams generated by the pattern generator 84 and irradiated to the photoelectric layer 60 may be provided inside the projection system 86.
  • the changing of the intensities of the plurality of beams applied to the photoelectric layer 60 includes nulling the intensity of some of the plurality of beams.
  • the projection system 86 may include a phase modulation element capable of changing the phase of at least one of the plurality of beams irradiated to the photoelectric layer 60, or may include a polarization modulation element capable of changing the polarization state. good.
  • the optical axis of the shaping optical system 82 b of the illumination system 82 (coincident with the optical axis of the final lens 96 which is the final optical element) AXi and the optical axis AXp of the projection system 86 are both parallel to the Z axis, but the optical axis AXi and the optical axis AXp may be nonparallel. In other words, the optical axis AXi and the optical axis AXp may intersect at a predetermined angle.
  • the optical axis AXi of the optical system (illumination optical system including the forming optical system 82b) of the illumination system 82 and the optical axis of the projection system 86 (final optical element) All are in parallel with the Z-axis, but are offset (offset from each other) by a predetermined distance in the Y-axis direction.
  • the illumination system 82 irradiates the pattern generator with light (beam) having a rectangular cross section long in the X-axis direction, so the offset amount in the Y-axis direction can be reduced.
  • the lens barrel 86a of the projection system 86 provided in each of the 45 light irradiation devices 80 is held by the supporting member 17 in a positional relationship corresponding to the electron beam optical system 70 of 45, as shown in FIG. More specifically, the support member 17 is formed with through holes 17 a extending in the Z-axis direction of 45 in an arrangement corresponding to the openings 36 a of the 45 of the first plate 36. A lens barrel 86a of a projection system 86 is disposed in each of the 45 through holes 17a.
  • the supporting member 17 is provided with hemispherical projections 21a at three places (only two of which are shown in FIG.
  • a triangular pyramid groove member 21b having a triangular pyramidal concave portion (groove portion) with which the three convex portions 21a respectively engage is provided.
  • the projection system 86 of the support members 17 and 45 is always in a fixed positional relationship with the housing 19 by the three convex portions 21 a and the three triangular pyramid groove members 21 b with which the three convex portions 21 a are engaged.
  • a kinematic coupling is configured which allows for mounting.
  • casing 19 is not restricted to the above-mentioned kinematic coupling.
  • the lens barrel 83 of the illumination system 82 provided in each of the 45 light irradiation devices 80 has a minute drive mechanism 13 provided at its lower end (see FIG. 7; It is held by the supporting member 15 in a positional relationship corresponding to the lens barrel 86a of 45 via the connector. More specifically, in the supporting member 15, 45 through holes 15a are formed in a positional relationship corresponding to 45 through holes 17a, and a minute drive provided at the lower end of the lens barrel 83 inside each through hole 15a. The mechanism 13 is inserted and fixed to the support member 15. Although each of the 45 micro drive mechanisms 13 is shown in a simplified manner in FIG.
  • the corresponding lens barrel 83 can be moved in three degrees of freedom with respect to the support member 15 in the X axis, Y axis, and ⁇ z directions.
  • the micro drive mechanism 13 may move the lens barrel 83 in the two degrees of freedom direction (X-axis direction and Y-axis direction), or may move the lens barrel 83 in five degrees of freedom or six degrees of freedom. It may be Further, the arrangement of the minute drive mechanism 13 is not limited to the lower end portion of the lens barrel 83.
  • the support member 15 is supported by the support member 17 and the housing 19 so as not to be heavy.
  • the support member 15 has a plurality of, for example, three suspension supports provided with an anti-vibration function from an upper frame (not shown) of the body frame independently of the housing 19 on which the support member 17 is mounted. It is suspended and supported at three points via a mechanism.
  • the space in which the light irradiation device 80 of the optical unit 18B is disposed is an atmospheric pressure space or a space slightly positive pressure than the atmospheric pressure.
  • the XY plane of the support member 17 (45 projection systems 86 (lens barrel 86a)) and the support members 15 (illumination system 82 and pattern generator 84 (lens barrel 83) of 45).
  • a relative position measurement system 29 capable of measuring relative position information of the inside is provided (see FIG. 13).
  • the relative position measurement system 29 is constituted by a pair of two-dimensional encoder systems 29a and 29b shown in FIGS.
  • a pair of scale members 33a and 33b are fixed in the vicinity of both end portions in the Y-axis direction and face each of the scale members 33a and 33b.
  • the heads 35 a and 35 b are fixed to the lower surface of the support member 15.
  • reflection type two-dimensional diffraction gratings having a pitch of, for example, 1 ⁇ m are formed, each having a periodic direction in two directions intersecting in the XY plane, for example, an X-axis direction and a Y-axis direction.
  • the head 35a forms a two-dimensional encoder 29a that measures positional information of the support member 17 and the electron beam optical unit 18A in the X-axis direction and the Y-axis direction based on the detection center of the head 35a using the scale 33a.
  • the head 35b is a two-dimensional encoder that measures positional information of the support member 17 and the electron beam optical unit 18A in the X-axis direction and the Y-axis direction based on the detection center of the head 35b using the scale member 33b. Configure 29b.
  • the position information measured by the pair of two-dimensional encoders 29a and 29b is supplied to the main controller 110, and the main controller 110 supports the support member based on the position information measured by the pair of two-dimensional encoders 29a and 29b. 15, relative positions of the support member 17 and the electron beam optical unit 18A in the X axis direction, Y axis direction and ⁇ z direction, that is, the illumination system portion of the optical unit 18B, the projection system portion of the optical unit 18B and the electron beam optical unit
  • the relative position in the direction of 3 degrees of freedom (X, Y, ⁇ z) with 18A is determined.
  • relative position measurement capable of measuring relative position information in the XY plane of the illumination system portion of the optical unit 18B, the projection system portion of the optical unit 18B, and the electron beam optical unit 18A by the pair of two-dimensional encoders 29a and 29b.
  • a system 29 (see FIG. 13) is configured.
  • the encoder system of the relative position measurement system 29 may not be a two-dimensional encoder system.
  • the scale member of the encoder system may be disposed on the support member 15, and the head may be disposed on the support member 17.
  • the relative position measurement system 29 is not limited to the encoder system, and another measurement system such as an interferometer system may be used.
  • the position of the illumination system portion of the optical unit 18B in the XY plane with respect to the projection system portion (and the electron beam optical unit 18A) of the optical unit 18B is maintained in a predetermined state or set to a desired position,
  • a drive system 25 (not shown in FIGS. 1 and 10, see FIG. 13) provided with a 3-axis actuator is provided.
  • Main controller 110 controls drive system 25 based on relative position information acquired by relative position measurement system 29.
  • the X-axis direction and Y-axis position of the illumination system portion of the optical unit 18B with respect to the projection system portion (and the electron beam optical unit 18A) of the optical unit 18B and the rotation angle around the Z axis are constant. It is maintained at (predetermined state) or adjusted to a desired state.
  • the length S mm in the X-axis direction and the ⁇ -axis direction on the light receiving surface of the pattern generator 84 during exposure is irradiated inside a rectangular area of length T mm, and the light from the pattern generator 84 is irradiated to the photoelectric element 54 by the projection system 86 having a reduction ratio of 1 ⁇ 4 by this irradiation, and the light is generated by the irradiation.
  • An electron beam is irradiated to a rectangular area (exposure field) on the image plane (wafer surface aligned with the image plane) through an electron beam optical system 70 having a reduction ratio of 1/50.
  • the exposure apparatus 100 of the present embodiment is configured to include the light irradiation device 80 (projection system 86), the corresponding photoelectric device 54, and the corresponding electron beam optical system 70.
  • the multi-beam optical system 200 (see FIG. 13) of a straight cylinder type with a magnification of 1/200 is provided 45 in the above-described matrix arrangement in the XY plane. Therefore, the optical system of the exposure apparatus 100 of the present embodiment is a multi-column electron beam optical system having 45 reduction optical systems with a reduction ratio of 1/200.
  • FIG. 13 of the multi-beam optical system 200 i of 45 only one multi-beam optical system 200 is representatively illustrated.
  • the exposure apparatus 100 a wafer with a diameter of 300 mm is to be exposed, and the 45 electron beam optical systems 70 are disposed to face the wafer, so the arrangement interval of the optical axes AXe of the electron beam optical system 70 is an example. It is 43 mm.
  • the exposure area handled by one electron beam optical system 70 is a rectangular area of 43 mm ⁇ 43 mm at maximum, so as described above, the movement stroke of wafer stage WST in the X-axis direction and Y-axis direction is 50 mm is enough.
  • the number of electron beam optical systems 70 is not limited to 45, and can be determined based on the diameter of the wafer, the stroke of the wafer stage WST, and the like.
  • an opening is provided in the wall of the boundary between the first chamber (first vacuum chamber) 34 and the second chamber (second vacuum chamber) 72. Is formed, and this opening can be opened and closed by the gate valve 43. That is, the first vacuum chamber 34 and the second vacuum chamber 72 can communicate with each other by opening the gate valve 43.
  • the gate valve 43 is opened and closed by moving the operation member 44 shown in FIG. 1 (and FIG. 10) up and down. In FIG. 10, the second vacuum chamber 72 is not shown.
  • the vertical movement of the operation member 44 is performed by the main control device 110 via, for example, a pneumatic (or electromagnetic) second drive unit 49 (see FIG. 13).
  • the gate valve 43 may be opened or closed. It is good. However, when the gate valve 43 is normally opened, the second vacuum chamber 72 is opened to the atmosphere through an open / close door (not shown), such as at the time of maintenance of the arm 42a described later inside the second vacuum chamber 72. If necessary, in order to protect the photoelectric layer 60 of the photoelectric element 54 present inside the first vacuum chamber 34, the main control device 110 controls the second drive unit 49 to lower the operation member 44. The gate valve 43 is closed by driving.
  • a plurality of, for example, three, of the above-described transfer systems 42 formed of, for example, vacuum compatible horizontal articulated robots are attached to a housing 45 in which the second vacuum chamber 72 is formed.
  • the robot arm (arm portion) 42 a of each transfer system 42 can be entirely accommodated in the second vacuum chamber 72 in a contracted state.
  • the drive unit 42 b that moves the arm unit 42 a of the transfer system 42 is disposed on the top of the housing 45.
  • the drive portion 42 b and the arm portion 42 a are connected by a drive shaft 42 c extending in the Z-axis direction capable of vertical movement and rotation.
  • the drive shaft 42 c connects the drive portion 42 b and the arm portion 42 a via an opening formed in the ceiling portion of the housing 45.
  • a seal member seals between the drive shaft 42 c and the opening of the housing 45.
  • each of the three transfer systems 42 transfers a transfer target such as the photoelectric device unit 50 between the closest holder 88 and the second chamber 72 among the plurality of holders 88.
  • one of the transport systems 42 is responsible for transport for the holders 88 that are at equal distances from the plurality of transport systems 42.
  • the housing 45 and the transport system 42 are suspended and supported from the upper frame (not shown) of the body frame together with the housing 19 by a plurality of, for example, three suspension support mechanisms for suspending and supporting the housing 19.
  • FIG. 12A shows a cross-sectional view taken along line AA of FIG. 1 which is partially omitted.
  • FIG. 12A is a view showing the vicinity of the end portion on the ⁇ X side by omitting the portion on the + X side in the cross-sectional view taken along the line AA of FIG.
  • the ceiling of the second vacuum chamber 72 is provided with a unit holding member 188 consisting of a pair of L-shaped members arranged symmetrically, and the unit holding member 188 is A semi-finished unit 50A which is a semi-finished product of the photoelectric device unit 50 is held.
  • the semi-finished unit 50A refers to a photoelectric element unit before vapor deposition of the photoelectric layer, that is, a unit in which the base member 53 before vapor deposition of the photoelectric layer 60 and the extraction electrode 55 are integrated.
  • the base member 53 of the semifinished unit 50A shown in FIGS. 12A and 12B includes the base 56 and the light shielding film 58 having a large number of apertures 58a formed on the light emitting surface of the base 56. Although formed, the photoelectric layer is not formed on the lower surface of the base member 53 (the surface of the light shielding film 58).
  • a heating device (referred to as an evaporation source or a deposition device) used to deposit an alkaline photoelectric layer on the base member 53 (base 56 and the light shielding film 58) of the semifinished unit 50A. Can also be provided).
  • the heating device is used to heat the alkali metal generator so as to generate alkali metal vapor, that is, to initiate the oxidation-reduction reaction of the alkali metal generator as a deposition material (which may also be called a deposition source). .
  • the heating device will be described later.
  • an alkali metal generator containing an oxidizing agent composed of tungstate (or chromate) selected according to the photoelectric layer to be manufactured and a reducing agent can be used.
  • a reducing agent for example, Sb (antimony), K (potassium), NA (sodium), Si (silicon), Zr (zirconium), Al (aluminum) or the like is used.
  • Such alkali metal generators are disclosed in detail, for example, in WO 2004/066337.
  • the shape of the alkali metal generating agent is not particularly limited, and may be formed into pellets of a predetermined shape, or may be a powder before being formed into pellets or a powder obtained by once forming into pellets and then crushed. good. In the present embodiment, it is assumed that a powdery alkali metal generator before powder forming into a pellet or a powder once formed into a pellet and then pulverized is used.
  • the oxidation-reduction reaction is performed in an atmosphere in which the alkali metal generator is adjusted to a predetermined degree of vacuum.
  • the alkali metal generator is adjusted to a predetermined degree of vacuum.
  • heating to a predetermined temperature is 10 ⁇ 6 to 10 ⁇ 1 Pa, preferably 10 ⁇ 6 to 10 ⁇ 3 Pa, as expressed by the partial pressure of the residual gas in the atmosphere. It means an atmosphere that is.
  • the heating device for generating the alkali metal vapor is not particularly limited as long as it has a configuration capable of heating the alkali metal generating agent in the above atmosphere.
  • a heating device 160 (see FIG. 13) configured to heat the alkali metal generator by high frequency heating is provided from the viewpoint of heating the alkali metal generator easily and uniformly.
  • the heating device 160 is controlled by the main controller 110. An exemplary configuration of the heating device 160 will be further described later.
  • an alkali metal generating agent 300 as a vapor deposition material (vapor deposition source) is placed.
  • the bottom wall of the housing 45 is provided with a movable wall 162 made of metal surrounding the arrangement area of the alkali metal generating agent 300.
  • the movable wall 162 is formed of a cylindrical member having a circular or rectangular shape in a plan view, and can move up and down between a first position shown in FIG. 12 (B) and a second position shown in FIG. 12 (A).
  • the deposition material is prevented from adhering to a place other than the surface on one side of the base member 53 to be deposited during deposition.
  • the movable wall 162 is moved up and down by a drive mechanism 164 (not shown in FIGS. 12B and 12A, see FIG. 13).
  • the drive mechanism 164 is controlled by the main controller 110.
  • the movable wall 162 incorporates a high frequency coil (not shown), and a high frequency power supply (not shown) for supplying a high frequency current is connected to the high frequency coil.
  • 13 includes a high frequency coil built in the movable wall 162 and a high frequency power supply connected to the high frequency coil, and is not shown in the heating device 160 (FIG. 12A, FIG. 12B, etc.) See) is configured.
  • the high frequency coil is substantially closest to the mounting area of the alkali metal generating agent 300 which is a vapor deposition material.
  • a fixed high frequency coil which does not move up and down may be disposed on the inner peripheral side of the movable wall 162 without providing the high frequency coil on the movable wall 162. In this case, the movable wall 162 may not be provided.
  • a carrier capable of storing a plurality (or one) of the photoelectric device unit 50 and the semi-finished unit 50A is provided.
  • FIG. 13 is a block diagram showing the input / output relationship of main controller 110 that mainly configures the control system of exposure apparatus 100.
  • Main controller 110 centrally controls components of exposure apparatus 100 including a microcomputer and the like shown in FIG.
  • the light irradiation device 80 connected to the control unit 11 includes a light source (laser diode) 82 a and a diffraction in addition to the optical characteristic adjustment device controlled by the control unit 11 based on an instruction from the main control device 110 Including optical elements and the like.
  • the electron beam optical system 70 connected to the control unit 11 is a pair of electromagnetic lenses 70 a and 70 b and electrostatic multipoles 70 c controlled by the control unit 11 based on an instruction from the main control device 110 (first The electrostatic lens 70 c 1 and the second electrostatic lens 70 c 2 ) are included.
  • reference numeral 500 denotes an exposure unit configured to include the above-described multi-beam optical system 200, the control unit 11, the backscattered electron detection device 106, and the signal processing device 108. In the exposure apparatus 100, an exposure unit 500 is provided.
  • the semi-finished unit 50A is held by the unit holding member 188 and the movable wall 162 is in the second position. I assume. At this time, the atmosphere inside each of the second vacuum chamber 72 and the first vacuum chamber 34 is maintained at the above-mentioned predetermined atmosphere.
  • the drive mechanism 164 is controlled by the main control unit 110, and the movable wall 162 is raised and driven to the first position shown in FIG. 12 (B).
  • main controller 110 starts heating of alkali metal generating agent 300 using heating device 160.
  • the oxidation-reduction reaction of the alkali metal generator 300 starts to progress, and as shown in FIG. 12C, alkali metal vapor is generated and the base of the semi-finished unit 50A held by the unit holding member 188 It starts to adhere to one surface of the member 53, that is, one surface (lower surface) of the substrate 56 on which the light shielding film 58 is formed.
  • Main controller 110 maintains the heating state of alkali metal generating agent 300 using heating device 160 for a predetermined time from the start of heating, and stops the heating after a predetermined time has elapsed. Thereby, the deposition of the photoelectric layer 60 with respect to the semi-finished unit 50A is completed, and the semi-finished unit 50A becomes a finished product, ie, the photoelectric element unit 50.
  • recovery of the photoelectric element unit 50 to be replaced held by the holder 88 in the first vacuum chamber 34 is from the start to the end of the heating of the alkali metal generating agent 300 described above. Is done as follows.
  • the second control unit 49 is controlled by the main control unit 110, the operation member 44 is driven upward, and the gate valve 43 is opened (see FIG. 15). .
  • the transport system 42 is controlled by the main controller 110, and as shown in FIG. 15, the hand portion 42d provided in the arm portion 42a is positioned below the photoelectric device unit 50 to be collected.
  • the photoelectric device unit 50 to be collected is, for example, a photoelectric device unit having a deteriorated photoelectric layer.
  • the hand unit 42 d (arm unit 42 a) is slightly raised and driven, so that the photoelectric device unit 50 is lifted by the hand unit 42 d and separated from the holder 88.
  • FIG. 16 shows the state immediately after unloading.
  • the arm portion 42a is driven to contract, whereby, as shown in FIG. 17, for example, the used photoelectric device unit 50 with the deteriorated photoelectric layer is recovered in the second vacuum chamber 72.
  • the collected used photoelectric element unit 50 is returned to the empty storage rack of the carrier by the arm part 42a.
  • the main control device 110 controls the drive mechanism 164 to lower the movable wall 162 to the second position.
  • the arm portion 42 a (robot arm) of the transfer system 42 can be inserted below the photoelectric device unit 50 (finished product) held by the unit holding member 188.
  • the transport system 42 is controlled by the main controller 110, and the photoelectric device unit 50 is carried out of the unit holding member 188 using the arm unit 42a (hand unit 42d).
  • the carried out photoelectric element unit 50 is loaded on the holder 88 according to the opposite procedure to the above-mentioned collection of the photoelectric element unit to be replaced, while being held by the hand portion 42d of the transport system 42.
  • a new semi-finished unit 50A to be deposited of the next photoelectric layer is taken out of the carrier and loaded on the unit holding member 188.
  • the semi-completed unit 50A loaded to the unit holding member 188 stands by until a condition requiring replacement of the photoelectric element unit occurs.
  • the deposition of the photoelectric layer for the semi-finished unit 50A, the recovery of the used photoelectric device unit 50 with the deteriorated photoelectric layer, and the loading of the completed photoelectric device unit 50 (finished product) onto the holder 88 Although described as a series of processes, it is not necessary to necessarily perform the exchange operation of the photoelectric element unit and the deposition operation of the photoelectric layer to the semi-finished unit in a series of operations.
  • a photoelectric element unit in which the deposition of the photoelectric layer is completed independently is always prepared in a plurality of carriers, and the photoelectric element unit in which the photoelectric layer is deteriorated and the photoelectric element prepared in the carrier is prepared immediately when the necessity for replacement of the photoelectric element occurs. It is good also as exchange with a unit.
  • the gate valve 43 can be closed, and the deposition operation of the photoelectric layer can be performed in parallel with the irradiation of the wafer W with the electron beam from at least one of the 45 electron beam optics 70.
  • the replacement of the photoelectric element unit and the deposition of the photoelectric layer are performed separately, that is, the deposition of the photoelectric layer on the semi-finished unit is performed without considering the replacement of the photoelectric element unit. It becomes possible.
  • main control device 110 can generate halftones using the pattern generator 84 itself. Therefore, main controller 110 corresponds to the in-plane illuminance distribution on the electron emission surface of photoelectric layer 60 by adjusting the intensity of each light beam irradiated to photoelectric layer 60 at the time of exposure described later. It is possible to adjust the illuminance distribution in the exposure field on the wafer surface, that is, to control the dose.
  • the intensities of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion is performed so that the amount of current
  • the adjustment of the beam intensity may be performed in the illumination system 82, may be performed by the pattern generator 84, or may be performed in the projection system 86.
  • the beam intensity (the illuminance of the electron beam, the beam current amount) of at least a part of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion may be different from the other electron beam intensities.
  • the intensity of a plurality of light beams irradiated to the photoelectric layer 60 may be adjusted.
  • the exposure apparatus 100 is used, for example, in complementary lithography.
  • a wafer on which a line and space pattern (L / S pattern) is formed is subjected to exposure by using double patterning or the like in immersion exposure using an ArF light source, and the line pattern is cut. It is used to form a cut pattern.
  • the exposure apparatus 100 it is possible to form a cut pattern corresponding to each of 72000 apertures 58a formed in the light shielding film 58 of the photoelectric element 54.
  • the flow of processing on a wafer in the present embodiment is as follows.
  • the wafer W before exposure to which the electron beam resist has been applied is placed on the wafer stage WST in the stage chamber 10 and is attracted by the electrostatic chuck.
  • Electrons from each electron beam optical system 70 for at least one alignment mark formed on a scribe line (street line) corresponding to each of, for example, 45 shot areas formed on wafer W on wafer stage WST The beam is irradiated, and the backscattered electrons from at least one alignment mark are detected by at least one of backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 , and all-point alignment measurement of wafer W is performed. based on the results of the all points alignment measurement, the plurality of shot areas on the wafer W 1, exposure using a 45 exposure unit 500 (multi-beam optical system 200) is started.
  • the irradiation timing (on / off) of each beam is controlled while scanning the wafer W (wafer stage WST) in the Y-axis direction.
  • alignment marks formed corresponding to a part of the shot areas of the wafer W may be detected without performing the all-point alignment measurement, and 45 shot areas may be exposed based on the detection result.
  • the number of exposure units 500 and the number of shot areas are the same, but may be different. For example, the number of exposure units 500 may be smaller than the number of shot areas.
  • the alignment mark may be detected outside the stage chamber 10. In this case, it is not necessary to detect the alignment mark in the stage chamber 10.
  • the exposure using the ribbon row A is started on a continuous 6000-pixel region of a certain row (referred to as a K-th row) aligned in the X-axis direction on the wafer.
  • a K-th row a continuous 6000-pixel region of a certain row aligned in the X-axis direction on the wafer.
  • the beam reflected by the ribbon row A is at the home position.
  • the exposure to the same 6000 pixel region is continued while deflecting the beam in the + Y direction (or -Y direction) by making the scan of the wafer W in the + Y direction (or -Y direction) from the start of exposure follow.
  • wafer stage WST advances at a velocity V [nm / s], for example Ta x V [nm].
  • V [nm / s] for example Ta x V [nm].
  • Ta ⁇ V 96 [nm].
  • the beam is returned to the home position while the wafer stage WST scans at 24 nm in the + Y direction at a velocity V. At this time, the beam is turned off so that the resist on the wafer is not actually exposed.
  • the continuous 6000 pixel area on the (K + 12) th row has the same position as the 6000 pixel area on the Kth row at the start of exposure. It is in.
  • the continuous (6000 K) pixel region on the (K + 12) th row is exposed while deflecting the beam to the wafer stage WST.
  • the exposure apparatus 100 is used for complementary lithography and is used for forming a cut pattern for an L / S pattern formed on the wafer W, for example, with the X-axis direction as the periodic direction.
  • a beam reflected by an arbitrary ribbon 84b can be turned on to form a cut pattern.
  • 72000 beams may or may not be simultaneously turned on.
  • main scanning drive 110 controls stage drive system 26 based on the measurement values of position measurement system 28 during scanning exposure to wafer W based on the above-described exposure sequence.
  • the light irradiation device 80 and the electron beam optical system 70 are controlled via the control unit 11 of each exposure unit 500. At this time, based on an instruction from the main control unit 110, the control unit 11 performs the above-described dose control as necessary.
  • the exposure apparatus 100 can hold the photoelectric element unit 50 in which the photoelectric element 54 and the extraction electrode 55 for accelerating the electron beam EB generated from the photoelectric element 54 are integrated.
  • a plurality of holders 88 are provided, and a first chamber (first vacuum chamber) 34 capable of evacuating the inside, and an electron beam EB generated from the photoelectric element 54 are targets through vacuum spaces inside the first vacuum chamber 34
  • a transport system 42 capable of transporting the photoelectric device unit 50 between each of the first and second vacuum chambers 72 and 88.
  • the photoelectric element 54 provided in the photoelectric element unit 50 has a base member 53 on one surface of which the photoelectric layer 60 is formed by vapor deposition.
  • the base member 53 has a base (also called a blank) 56 made of a transparent member, and a light shielding film 58 having a plurality of apertures 58 a formed on one surface (surface on the light emission side) of the base 56.
  • a unit holding member 188 capable of holding any of the later photoelectric element units 50 (finished products) is provided.
  • the alkali metal generating agent 300 which is a deposition source (deposition material) of the photoelectric layer deposited on the semifinished unit 50A held by the unit holding member 188, is heated.
  • the heating device (evaporation source) 160 for evaporating and evaporating is disposed, and the photoelectric layer 60 is deposited on one surface of the base member 53 of the semifinished unit 50A inside the second vacuum chamber 72 to complete the photoelectric element as a finished product
  • the unit can be manufactured. That is, the second vacuum chamber 72 doubles as a deposition chamber. However, a dedicated deposition chamber provided with a unit holding member 188 and a heating device 160 may be provided separately from the second vacuum chamber 72. In this case, the photoelectric element unit 50 may be transported from the unit holding member 188 in the deposition chamber to the holder 88 in the first vacuum chamber 34 via the second vacuum chamber 72. It may be provided next to the vacuum chamber 34, and a gate valve may be provided between the two chambers.
  • the transport system 42 can transport the photoelectric device unit 50 between the unit holding member 188 and the holder 88. Therefore, in the exposure apparatus 100, the transport system 42 unloads the used photoelectric device unit 50 with the deteriorated photoelectric layer from the holder 88 and carries it into the second vacuum chamber 72, and the second vacuum It is possible to unload the photoelectric device unit 50, which is a finished product of the deposition of the photoelectric layer 60 on the base member 53 inside the chamber 72, from the unit holding member 188 and load it onto the holder 88. In particular, immediately before arrival of replacement time of the photoelectric device unit 50 held by the unit holding member 188, the photoelectric layer 60 is vapor-deposited on the base member 53 in the second vacuum chamber 72 to complete the completed photoelectric device unit 50. When replacing the photoelectric conversion unit with the deteriorated photoelectric conversion unit 50, the life of the photoelectric conversion unit of the photoelectric conversion unit 50 used after the replacement can be longest.
  • the exposure apparatus 100 includes the exposure unit 500 configured to include the multi-beam optical system 200, the control unit 11, the backscattered electron detection device 106, and the signal processing device 108. (See Figure 13).
  • the multi-beam optical system 200 includes a light irradiation device 80 and an electron beam optical system 70.
  • the electron beam optical system 70 of the exposure apparatus 100 irradiates the wafer W with electrons emitted from the photoelectric element 54 as the plurality of electron beams by irradiating the photoelectric element 54 with a plurality of light beams. Therefore, according to the exposure apparatus 100, since there is no blanking aperture, the source of generation of complex distortion due to charge-up and magnetization is fundamentally eliminated, and generation of waste electrons (reflected electrons) not contributing to the exposure of the target is suppressed. It is possible to eliminate long-term instability factors.
  • main controller 110 performs scanning (movement) of wafer stage WST holding wafer W in the Y-axis direction via stage drive system 26. Control.
  • the main control unit 110 passes n (for example, 72000) apertures 58 a of the photoelectric element 54 for each of the m (for example, 45) multi-beam optical systems 200 of the exposure unit 500.
  • the irradiation state (on state and off state) of the n beams is changed for each aperture 58a, and the intensity of the light beam is adjusted for each beam using the pattern generator 84.
  • the first electrostatic lens 70c 1 of the electrostatic multipole 70c caused by changes in the total current amount, reduction in the X-axis direction and the Y-axis direction due to the Coulomb effect magnification (changes in) Correct, fast, and individually.
  • the second electrostatic lens 70c 2 correction (light pixels of the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch Do.
  • a desired line of a fine L / S pattern having an X-axis direction as a periodic direction which is formed in advance in, for example, 45 shot areas on the wafer by double patterning using an ArF immersion exposure apparatus, for example. It becomes possible to form a cut pattern at a desired position on the top, and high precision and high throughput exposure is possible.
  • the plurality of apertures 58 a in each multi-beam optical system 200 is turned on, in other words, regardless of the combination of the beams turned on, for example, 45 shot areas on the wafer. It is possible to form a cut pattern at a desired position on a desired line of a fine L / S pattern in which the periodic direction is the X axis direction formed in advance.
  • the present invention is not limited to this, and instead of or in addition to the deposition of the photoelectric layer 60 for the semi-finished unit 50A, the deposition of the photoelectric layer may be performed on the used photoelectric element unit 50 in the deposition chamber. That is, in the deposition chamber, both of the deposition of the photoelectric layer 60 for the semi-finished unit 50A and the deposition of the photoelectric layer for the used photoelectric device unit 50 may be performed, but only one of them may be performed. Note that the operation of depositing the photoelectric layer on the used photoelectric device unit 50 may be referred to as repair of the photoelectric layer or recovery of the photoelectric layer.
  • the used photoelectric element unit 50 is transported by the transport system 42 from the holder 88 onto the unit holding member 188 in the deposition chamber (that is, recovered), and is held by the unit holding member 188. Deposition is performed.
  • the deposition for the used photoelectric element unit is not only the photoelectric element unit in which the photoelectric layer is deteriorated and becomes unusable but also the photoelectric layer is not deteriorated to the extent that it can not be used, but there is a history of use or used You may implement with respect to the photoelectric element unit which became. Note that a peeling chamber which can peel off a used photoelectric layer may be further provided.
  • deposition (overcoating) of the photoelectric layer on the collected photoelectric device unit 50 may be performed without peeling off the used photoelectric layer, or photoelectric conversion may be performed after peeling of the used photoelectric layer. It is also possible to deposit a layer.
  • the pattern generator 84 is exemplified by GLV.
  • the pattern generator 84 may be a reflective liquid crystal display device or a digital micromirror device (Digital It may be configured using a reflective spatial light modulator having a plurality of movable reflective elements such as Micromirror Device) and PLV (Planer Light Valve).
  • FIG. 18 schematically shows the arrangement of an exposure apparatus 1000 according to the second embodiment.
  • the same reference numerals are used for constituent parts that are the same as or equivalent to those of the first embodiment described above, and the description thereof will be omitted.
  • An exposure apparatus 1000 according to the second embodiment is different from the exposure apparatus 100 according to the first embodiment in that an optical system 118 is used instead of the optical system 18 described above.
  • the configuration and the like of the other parts are the same as in the exposure apparatus 100. The following description will focus on the differences.
  • the optical system 118 includes an electron beam optical unit 18A suspended and supported from an upper frame (not shown) of the body frame by a suspension support mechanism (not shown), and a first vacuum forming a part of the electron beam optical unit 18A. And an optical unit 117 mounted on a housing 19 partitioning the chamber 34.
  • the optical unit 117 is a light irradiation of 45 held by the holding member 120 in an arrangement corresponding to the arrangement of the holding member 120 fixed on the housing 19 and the 45 electron beam optical systems 70 provided in the electron beam optical unit 18A. And an apparatus 180.
  • through holes 120a extending in the Z-axis direction of 45 are formed in an arrangement corresponding to the arrangement of the 45 electron beam optical systems 70, and the light irradiation devices 180 are arranged in the respective through holes 120a.
  • the light irradiation device 180 includes a light emitting device 184 and a microlens array 184 c which is a type of optical element provided on the light emitting side of the light emitting device 184 as shown in FIG.
  • a light emitting device mainly composed of a self light emitting contrast device array is used as the light emitting device 184. Therefore, in the following, the self light emitting contrast device using the same reference numerals as the light emitting device 184 Also referred to as array 184.
  • a light emitting device 184 ie, a self light emitting contrast device array 184, is a programmable patterning device built in a semiconductor substrate and arranged in a one or two dimensional array form and having a plurality of individually controllable light emitting parts is there.
  • the self-luminous contrast device array 184 is formed by laminating a plurality of compound semiconductor constituent material layers on a substrate, and then selectively removing each compound semiconductor constituent material layer by wet etching to form each light emitting element (light emitting portion)
  • the semiconductor layer is formed into a mesa structure, or the light emitting elements are separated.
  • the light emitting device 184 includes, for example, a pn junction of a semiconductor with a double hetero junction (structure), and the light emitting portion 184 a and the plurality of light emitting portions 184 a arranged individually in an XY two-dimensional array on the semiconductor substrate. And a plurality of CMOS drive circuits 184b to be driven.
  • CMOS drive circuit 184b since a micro LED, which is a type of self-luminous contrast device, is used as the plurality of light emitting portions 184a, hereinafter, the micro LED 184a is described using the same reference numeral as the light emitting portion. .
  • the CMOS drive circuit 184b is simplified and shown as a mere transistor.
  • reference numeral 185 schematically shows interconnections connected to a plurality of CMOS drive circuits 184b.
  • the light emitting device 184 can individually control the intensity of the light beam LB from each of the plurality of micro LEDs 184a by controlling the voltage applied thereto, and the intensity is controlled to zero, that is, the light beam LB Light emission stop. For this reason, the light emitting device 84 can generate an optical pattern composed of, for example, a bright and dark pattern.
  • a light emission part not only micro LED but another radiation emission diode, for example, a light emitting diode, an organic LED, a polymer LED, a laser diode, etc. can also be used.
  • the light emitting portion is not limited to the radiation emitting diode, but may be another self-emitting contrast device such as a vertical cavity surface emitting laser (VCSEL) or a vertical external cavity surface emitting laser (VECSEL).
  • VCSEL vertical cavity surface emitting laser
  • VECSEL vertical external cavity surface emitting laser
  • These self-luminous contrast devices emit light beams in a direction perpendicular to the semiconductor substrate, ie, in a direction perpendicular to the surface of the substrate 56 of the photoelectric element 54, and therefore, as a light emitting unit 184a in FIG. It is possible to use these self-luminous contrast devices instead of micro LEDs.
  • the microlens array 184c is provided corresponding to each of a plurality of light emitting units, in this case, the micro LEDs 184a, which is a type of self-luminous contrast device, and crosses one another in the XY plane corresponding to the arrangement of the plurality of micro LEDs 184a. And a plurality of microlenses (optical members, optical elements) 186 arranged and integrated in a two-dimensional array in two directions (for example, the X-axis direction and the Y-axis direction). Each of the plurality of microlenses 186 of the microlens array 184c condenses the light beam LB, which is divergent light generated by the corresponding micro LED 84a, and converts it into parallel light.
  • the micro LEDs 184a which is a type of self-luminous contrast device
  • the light irradiation device 180 is disposed above the vacuum barrier 81 via a predetermined clearance (gap), and below the vacuum barrier 81 via a predetermined clearance (gap).
  • a photoelectric element 54 which constitutes a part is disposed.
  • the exposure apparatus 1000 according to the second embodiment is the same as the exposure apparatus 100 according to the first embodiment described above except for the optical unit 117.
  • the photoelectric device unit 50 having the photoelectric device 54 may be supported at a predetermined position inside the housing 19 by the holder 88, but the holder 88 is configured to be movable with respect to the housing 19, and not shown. With the vacuum compatible actuator, the holder 88 and the photoelectric device unit 50 may be movable in the XY plane. In the latter case, each micro LED 184a of the light irradiation device 180 may correspond to the aperture 58a of the photoelectric element 54, but the invention is not limited thereto.
  • the number of micro LEDs 184a and the number of apertures 58a are not limited thereto. It may be different. That is, more apertures 58a may be formed in the light shielding film 58 than the micro LEDs 184a, or a smaller number of apertures 58a may be formed in the light shielding film 58 than the micro LEDs 184a.
  • the light shielding film 58 of the photoelectric element 54 may be formed with a smaller number of rows of apertures 58a than the number of rows of the micro LEDs 184a.
  • at least one row of the row of micro LEDs 184a may be a backup LED row.
  • the light shielding film 58 of the photoelectric element 54 may be formed with a row of apertures 58 a in a number greater than the number of rows of the micro LEDs 84 a.
  • at least one row of the rows of the apertures 58a may be a row of apertures for backup.
  • the exposure apparatus 1000 includes a light irradiation apparatus 180 in place of the light irradiation apparatus 80.
  • the multi-beam optical system 200 is provided by the light irradiation apparatus 180 and the electron beam optical system 70.
  • the exposure apparatus 1000 according to the second embodiment described above can obtain the same effects as those of the exposure apparatus 100 according to the first embodiment described above.
  • the size of the apparatus can be reduced because the size of the apparatus can be significantly reduced.
  • the light irradiation device 180 includes the self-emission contrast device array (light emitting element) 184 and the microlens array 184 c provided on the light emission surface side thereof.
  • the light irradiation device 180 may not necessarily have an optical member such as the microlens array 184 c.
  • each light irradiation device 180 is disposed on the opposite side to the photoelectric element 54 (photoelectric element unit 50) via the vacuum dividing wall 81 of the first vacuum chamber 34 .
  • the light emitting device 184 may form a part of the vacuum barrier 81.
  • the light irradiation device 180 may not have the microlens array 184c.
  • the light emitting device is configured by the light emitting device 184, but at least a part of the light emitting device 184 may form a part of the vacuum dividing wall 81,
  • the size of the holder 88 in the height direction may be adjusted so that the base material 56 of the above becomes closer.
  • the light irradiation device 180 includes, as a light emitting device, a self light emitting contrast device array having a plurality of light emitting units that emit light in a direction perpendicular to the semiconductor substrate, such as a radiation emitting diode, VCSEL or VECSEL.
  • a light emitting device can be configured using a self-luminous contrast device array having a plurality of light emitting units emitting light parallel to the semiconductor substrate as a light emitting device.
  • a plurality of photonic crystal lasers (hereinafter, appropriately referred to as photonic lasers) having a double hetero structure which is fabricated on a semiconductor substrate and arranged in an XY two-dimensional array as a light emitting unit, and a plurality of photonics
  • a self light emitting contrast device array (light emitting device) having a plurality of CMOS drive circuits for individually driving lasers can be used.
  • a photonic laser is an edge-emitting laser that emits a light beam in a direction parallel to the plane of the substrate inside a semiconductor substrate, so for use in a self-luminous contrast device array, the light beam is extracted out of plane There is a need.
  • the timing of the end of heating is determined based on the elapsed time from the start of heating of the alkali metal generating agent 300 which is the vapor deposition material, but the present invention is not limited to this.
  • the heating completion timing may be determined while monitoring the progress of deposition.
  • the second vacuum chamber 72 in which at least a part of the transfer system 42 is provided doubles as an evaporation chamber.
  • a deposition chamber may be provided separately from the second vacuum chamber 72.
  • the carrier system 42 via the second vacuum chamber 72, between the deposition chamber and the first vacuum chamber 34, or between the deposition chamber and the carrier in the second vacuum chamber 72, the carrier Between the first vacuum chamber 34 and the first vacuum chamber 34 and the carrier, transportation of a new photoelectric device unit 50 or a used photoelectric device unit 50 is performed.
  • FIG. 21 shows a housing 145 for partitioning the deposition chamber 172 according to the present modification and the internal configuration thereof.
  • a recess 145a of a predetermined depth is formed in the ceiling portion of the housing 145, and an opening 145b having, for example, a circular or square plan view is formed on the inner bottom surface of the recess 145a.
  • a holding member 147 that holds the light source unit 146A and the vacuum dividing wall 146B side by side in the vertical direction is inserted into the recess 145a substantially without a gap.
  • the holding member 147 surrounds the whole of the side surfaces of the light source part 146A and the vacuum bulkhead 146B.
  • the vacuum bulkhead 146B is made of a light transmitting member such as quartz glass.
  • the above-mentioned unit holding member 188 is provided on the ceiling portion of the housing 145, and the unit holding member 188 holds the semi-finished unit 50A.
  • the light source unit 146A has, for example, a laser diode as a light source. Therefore, when the laser beam LB is emitted from the light source, the laser beam LB passes through the vacuum partition wall 146B and then passes through the opening 145b to pass through the opening 53b of the base member 53 of the semifinished unit 50A 58). At this time, as shown in FIG. 21, when the photoelectric layer is formed at least inside the aperture 58a formed in the light shielding film 58, electrons are generated by photoelectric conversion of the photoelectric layer, and the electrons are extracted as an extraction electrode It is accelerated at 55 to form an electron beam EB, which travels downward.
  • a laser diode as a light source. Therefore, when the laser beam LB is emitted from the light source, the laser beam LB passes through the vacuum partition wall 146B and then passes through the opening 145b to pass through the opening 53b of the base member 53 of the semifinished unit 50A 58). At this time, as shown in FIG. 21, when the photoelectric
  • a Faraday cup 143 for current measurement is embedded in the bottom wall portion of the housing 145 directly below the opening 145 b.
  • a movable wall 162 which doubles as a part of the heating device 160 described above is provided.
  • an alkali metal generating agent 300 which is a vapor deposition material is placed in a predetermined region inside the movable wall 162 on the top surface of the bottom wall.
  • a powdery alkali metal generator 300 is placed in a ring shape as viewed from above.
  • the Faraday cup 143 covers the inner cup-shaped collecting electrode 151 having the opening 151 a formed on the upper surface, and covers the periphery of the collecting electrode 151. And an outer secondary electron suppression electrode 153 in which a hole 153a is opened, and an insulator 155 is filled between the collection electrode 151 and the secondary electron suppression electrode 153.
  • the secondary electron suppression electrode 153 is for preventing secondary electrons from escaping.
  • the secondary electron suppression electrode 153 is connected to the ground, and an ammeter 157 is connected to the collection electrode 151.
  • N I / e
  • I is the observed current value (amps) and e is the elementary charge (about 1.60 ⁇ 10 ⁇ 19 C). If the measured current value is 1 nanoampere (10 -9 A), about 6 billion ions would be incident on the Faraday cup 143 per second. Because the relationship between the number of charged particles and the current value is direct (as determined by the above equation), the Faraday cup enables accurate measurement.
  • the alkali metal generating agent 300 when the alkali metal generating agent 300 is heated to generate alkali metal vapor and vapor deposition of the photoelectric layer on the semi-finished unit 50A, main control is performed.
  • the device 110 continues to monitor the measurement result of the ammeter 157, and the heating (deposition) is stopped when the measurement result matches the target current value.
  • the photoelectric layer 60 having desired photoelectric conversion efficiency can be formed on one surface of the base member 53 of the semi-finished unit 50A.
  • the housing 145 may be provided instead of the housing 45 described above, or may be provided separately from the housing 45.
  • the transport system 42 (or a transport system similar to the transport system 42) is provided in the case 145 as described above, and in the latter, the transport system 42 (or a transport system similar to the transport system 42)
  • the photoelectric element unit 50 or the semifinished unit 50A is loaded to the unit holding member 188 inside 172, and the photoelectric element unit 50 can be unloaded from the unit holding member 188.
  • the housing 45 and the housing 145 may be configured to be able to be opened and closed via a gate valve.
  • the heating device 160 for vapor deposition and the Faraday cup 143 may be provided in different places (for example, separate chambers). Also in this case, a light source unit or the like may be disposed above the Faraday cup 143.
  • the aperture may not be used.
  • the first embodiment will be described.
  • a light pattern image formed by a pattern generator is projected on a photoelectric element and further converted into an electronic image by the photoelectric element.
  • the image may be reduced and formed on the wafer surface.
  • a photoelectric element in which a photoelectric layer is vapor-deposited on the light emission surface of the base is used as the photoelectric element, and the photoelectric element and the lead-out electrode 55 constitute a photoelectric element unit.
  • the aperture and the photoelectric layer may be integrally formed as in the embodiment described above, or may be disposed to face each other via a predetermined clearance (a gap, a gap).
  • a predetermined clearance a gap, a gap.
  • the drive mechanism which moves only the aperture member in the XY plane, the drive mechanism which moves only the photoelectric element (photoelectric element unit) in the XY plane, the aperture member and the photoelectric element One of the drive mechanisms may be provided to move the element unit integrally in the XY plane. In the case of the former two, the lifetime of the photoelectric layer 60 can be extended.
  • spatial light modulators such as transmissive liquid crystal elements may be used to form a plurality of apertures.
  • a self-luminous contrast device array (light emitting device) is used instead of the pattern generator, but also in this case, even if light is irradiated to the photoelectric layer 60 through the aperture 58 Alternatively, the light emitting device may emit a light beam from the light emitting device without using an aperture.
  • the photoelectric element unit in the case of using a photoelectric element unit having a so-called aperture-integrated photoelectric element in which an aperture such as the photoelectric element 54 is integrally provided with the photoelectric layer, the photoelectric element unit is integrated with the holder 88 It is also possible to provide an actuator movable in the XY plane.
  • the aperture integrated photoelectric element that can be used to form the photoelectric element unit together with the lead-out electrode 55 is not limited to the type shown in FIG. 24A, for example, as shown in FIG. 24B.
  • a photoelectric device 54a of a type in which the space in the aperture 58a is filled with the light transmission film 144 can be used.
  • the base member 53a is configured to include the base material 56, the light shielding film 58, and the light transmitting film 144.
  • a part of the base 56 may be filled in the space in the aperture 58a.
  • another film through which light can pass may be formed between the light shielding film 58 and the photoelectric layer 60.
  • a light shielding film 58 having an aperture 58a is formed on the upper surface (light incident surface) of the substrate 56 by vapor deposition of chromium, and the lower surface (light emitting surface) of the substrate 56
  • the space in the aperture 58a is filled with the light transmission film 144 in the photoelectric device 54b of FIG.
  • the photoelectric device 54 b uses the base member 53 upside down from the photoelectric device 54, and the photoelectric layer 60 is formed on the surface of the base member 56 opposite to the light shielding film 58 of the base member 53.
  • the photoelectric device 54c uses the base member 53a upside down from the photoelectric device 54a, and the photoelectric layer 60 is formed on the surface of the base 56 of the base member 53a opposite to the light shielding film 58.
  • the base 56 is not only a light transmitting member such as quartz glass but also a light transmitting member and a light transmitting film (single layer or multilayer ) May be configured.
  • the transport system 42 at least a part of which is accommodated in the second vacuum chamber 72 is between the holder 88 provided in the first vacuum chamber 34 and the second vacuum chamber 72.
  • the transport object of the transport system 42 is not limited to this.
  • the transfer system 42 may transfer the photoelectric device 54 between the holder 88 and the second vacuum chamber 72 instead of the photoelectric device unit. In this case, it is necessary to dispose the extraction electrode 55 below the holder 88, for example, by suspending and supporting the extraction electrode 55 from the holder 88.
  • the member that is to be the photoelectric element 54 after the photoelectric layer 60 is formed by vapor deposition is the substrate 56 itself made of a light transmitting member or the light shielding film 58 is formed on one surface before the photoelectric layer 60 is formed.
  • the base materials 56 i.e., the base members 53 described above
  • the transfer system 42 is configured to transfer the first vacuum chamber 34 and the second vacuum chamber 72 as transfer objects. It can be transported between.
  • the formation (deposition) of the photoelectric layer 60 for the semi-completed unit 50A is performed in the second vacuum chamber 72 (or the deposition chamber). It is also possible to perform formation (deposition) of the photoelectric layer 60 for the semifinished unit 50A held by the holder 88.
  • the heater / coil for high frequency heating
  • the transport system 42 sets the heating device as the transport object between the first vacuum chamber 34 and the second vacuum chamber 72. It is also possible to configure to be transportable.
  • the Faraday cup or other deposition monitor it is also possible to configure the Faraday cup or other deposition monitor so that the transport system 42 can transport the first vacuum chamber 34 and the second vacuum chamber 72 as a transport target.
  • the transfer system 42 is configured to be able to transfer between the first vacuum chamber 34 and the second vacuum chamber 72 with the getter agent (water getter agent) that adsorbs at least water as the object to be transferred. good.
  • the object to be transported can include a sensor used for positioning the photoelectric device unit 50 (or the photoelectric device 54) with respect to the holder 88.
  • a sensor including a detector for detecting a light beam passing through a through hole formed at a predetermined position of the holder 88 when the photoelectric element unit is held in a predetermined positional relationship on the holder 88 is used.
  • a sensor including a detector for detecting a light beam passing through a through hole formed at a predetermined position of the holder 88 when the photoelectric element unit is held in a predetermined positional relationship on the holder 88 is used.
  • recesses 88a having a predetermined depth are formed at a plurality of locations, for example, three locations, of the holder 88, and the through holes 88b are formed on the inner bottom surface of each recess 88a.
  • an opening pattern AP is formed of chromium or the like at a position facing the respective concave portions 88 a of the lower surface of the
  • each opening pattern AP engages with the corresponding recess 88a. While the paths of a plurality of (here, three) light beams as shown by the arrows are formed at the same time, while the centers of the aperture patterns AP substantially coincide with the corresponding through holes 88b.
  • paths of three light beams are not simultaneously formed. Therefore, as shown in FIG.
  • the vacuum dividing wall 81 may be formed of a transparent member, and a plurality of light sources 90 may be disposed on the vacuum dividing wall 81.
  • the present invention is not limited to this.
  • at least one photodetector 89 may be transported by the transport system 42 in order to verify that the optoelectronic device unit 50 is positioned at the desired position.
  • a positioning pin or the like may be provided on the holder 88 in order to realize accurate positioning when the photoelectric device unit 50 is loaded on the holder 88.
  • Each of the plurality of opening patterns AP shown in FIGS. 25A and 25B may be covered with a photoelectric layer.
  • a photoelectric layer In such a case, when the photoelectric device unit 50 is held on the holder 88 in a predetermined (predetermined) positional relationship, electrons generated by photoelectric conversion by the photoelectric layer covering the respective opening patterns AP are transmitted through the through holes 88 b. Since the light is emitted downward, a detector (e.g., a Faraday cup) for detecting the electrons is used to confirm the positioning state at the time of loading or after loading of the photoelectric element unit 50 instead of the above-described detector 89. , And may be transported by the transport system 42.
  • a detector e.g., a Faraday cup
  • the above-described sensor used for positioning the photoelectric device unit 50 with respect to the holder 88 is a holder by forming the above-mentioned opening pattern AP (or the opening pattern AP covered with the photoelectric layer) on the base 56 of the photoelectric device 54. It can also be used to position the photoelectric element 54 relative to 88.
  • the optical system included in the exposure apparatuses 100 and 1000 has been described as a multi-column type including a plurality of multi-beam optical systems.
  • the present invention is not limited thereto. It may be a multi-beam optical system.
  • the wafer W alone is transported onto the wafer stage WST, and the electron beam is transmitted from the electron beam optical system 70 of the multibeam optical system to the wafer W while moving the wafer stage WST in the scanning direction.
  • the exposure apparatus that performs exposure by performing irradiation has been described, the present invention is not limited to this, and a type of exposure apparatus in which the wafer W is integrated with a table (holder) that can be transported integrally with the wafer called shuttle is also replaced on the stage.
  • the above embodiments (except for the wafer stage WST) can be applied.
  • it is applicable to the apparatus of the single column type which irradiates a single beam to a target.
  • a reference mark may be used to confirm that the electron beam emitted from the electron beam optical system 70 is irradiated at a desired position.
  • the electron beam is irradiated so that the reference mark is irradiated, and the reflected electron is detected by the irradiation to detect the positional relationship between the reference mark and the irradiation position of the electron beam, whereby the electron beam is at the desired position It can be checked whether or not it has been irradiated.
  • the reference mark may be provided on the reference wafer held by wafer stage WST, or may be provided on wafer stage WST. The wafer may be exposed to confirm that the electron beam emitted from the electron beam optical system 70 is irradiated at a desired position.
  • position measurement system 28 for measuring the position information of wafer stage WST may also be capable of measuring the position information in the direction of three degrees of freedom in the XY plane.
  • the entire optical system 18, 118 is supported by being suspended from the body frame by the suspension support mechanism.
  • the present invention is not limited thereto. At least a part of the optical system 18, 118 is It may be supported above the floor F via a floor-standing type support member (not shown).
  • the exposure technology constituting the complementary lithography is not limited to the combination of the liquid immersion exposure technology using an ArF light source and the charged particle beam exposure technology, and, for example, the line and space pattern can be other ArF light source, KrF, etc. It may be formed by a dry exposure technique using a light source.
  • the exposure apparatuses 100 and 1000 according to each of the above embodiments form a fine pattern on a glass substrate to form a mask. It can be suitably applied when manufacturing.
  • electronic devices such as semiconductor devices are subjected to functional device / functional performance design steps, wafer fabrication steps from silicon materials, and actual circuits on wafers by lithography techniques etc. Are manufactured through a wafer processing step of forming a semiconductor device, a device assembly step (including a dicing step, a bonding step, and a package step), an inspection step, and the like.
  • the wafer processing step is a lithography step (a step of applying a resist (sensitive material) on the wafer, an electron beam exposure apparatus according to the embodiment described above, and exposure of the wafer by the exposure method thereof (a pattern according to designed pattern data)
  • a step of drawing), a step of developing the exposed wafer), an etching step of etching away the exposed member of the portion other than the portion where the resist remains, a resist for removing the unnecessary resist after the etching is completed Include removal steps and the like.
  • the wafer processing step may further include pre-process processing (oxidation step, CVD step, electrode formation step, ion implantation step, etc.) prior to the lithography step, in which case the lithography step corresponds to that of each of the above embodiments.
  • a device pattern is formed on the wafer, so that micro devices with high integration can be manufactured with high productivity (high yield).
  • the above-described complementary lithography is performed, and at that time, the above-described exposure method is performed using the electron beam exposure apparatus 100 or 1000 of each embodiment. It becomes possible to manufacture highly integrated microdevices.
  • an exposure apparatus using an electron beam has been described.
  • the present invention is not limited to the exposure apparatus, and at least one of predetermined processing and predetermined processing on a target using an electron beam such as welding and three-dimensional modeling.
  • the electron beam apparatus according to the above-described embodiment can be applied to an apparatus to be used or an inspection apparatus using an electron beam.
  • the photoelectric layer 60 is formed of an alkaline photoelectric conversion film.
  • the photoelectric layer is not limited to the alkaline photoelectric conversion film.
  • the photoelectric device may be configured using a photoelectric conversion film of a type.
  • shapes such as a member, an opening, and a hole, may be demonstrated using circular, a rectangle, etc., it is needless to say that it is not restricted to these shapes.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif à faisceau d'électrons (100) comprenant : une première chambre (34) dont l'intérieur se prête au vide et qui est pourvue d'un support (88) pouvant maintenir un élément photoélectrique ayant une couche de conversion photoélectrique qui génère des électrons lorsqu'elle est exposée à la lumière et une unité à élément photoélectrique (50) ayant une électrode d'extraction permettant d'accélérer les électrons générés par l'élément photoélectrique ; une optique de faisceau d'électrons (70) qui amène les électrons générés par l'élément photoélectrique à être exposés à un rayonnement sous la forme d'un faisceau d'électrons à travers la première chambre sur une cible W ; une seconde chambre (72) dont l'intérieur se prête au vide et pouvant communiquer avec la première chambre ; et un système de transport (42) pouvant transporter l'unité à élément photoélectrique entre le support et la seconde chambre.
PCT/JP2018/002192 2018-01-25 2018-01-25 Dispositif à faisceau d'électrons, procédé de production de dispositif, et unité à élément photoélectrique Ceased WO2019146027A1 (fr)

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WO2021049168A1 (fr) * 2019-09-10 2021-03-18 株式会社ジャパンディスプレイ Dispositif d'exposition
CN115836251A (zh) * 2020-04-27 2023-03-21 约翰·贝内特 模块化平行电子光刻

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JPS5936928A (ja) * 1982-08-25 1984-02-29 Toshiba Corp 電子ビ−ム転写装置
JPH07254539A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 電子ビーム露光装置
JPH1079344A (ja) * 1996-09-04 1998-03-24 Canon Inc 原版保持装置およびこれを用いた露光装置
JP2001509967A (ja) * 1997-05-26 2001-07-24 テクニッシェ・ウニベルシテイト・デルフト リソグラフィーシステム
JP2002500817A (ja) * 1998-03-31 2002-01-08 エテック システムズ インコーポレイテッド 制御された単一及び多重電子ビーム放出のためのゲート形光電陰極
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Publication number Priority date Publication date Assignee Title
WO2021049168A1 (fr) * 2019-09-10 2021-03-18 株式会社ジャパンディスプレイ Dispositif d'exposition
CN115836251A (zh) * 2020-04-27 2023-03-21 约翰·贝内特 模块化平行电子光刻
JP2023535107A (ja) * 2020-04-27 2023-08-16 ジョン ベネット モジュール式並行電子リソグラフィ

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