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WO2018221753A1 - Dispositif mems et son procédé de fabrication - Google Patents

Dispositif mems et son procédé de fabrication Download PDF

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Publication number
WO2018221753A1
WO2018221753A1 PCT/KR2017/005569 KR2017005569W WO2018221753A1 WO 2018221753 A1 WO2018221753 A1 WO 2018221753A1 KR 2017005569 W KR2017005569 W KR 2017005569W WO 2018221753 A1 WO2018221753 A1 WO 2018221753A1
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WO
WIPO (PCT)
Prior art keywords
mems
mems structure
layer
forming
sacrificial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/005569
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English (en)
Korean (ko)
Inventor
오재섭
강민호
이완규
임성규
김영수
황욱중
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
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Korea Advanced Institute of Science and Technology KAIST
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Publication date
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Priority to PCT/KR2017/005569 priority Critical patent/WO2018221753A1/fr
Publication of WO2018221753A1 publication Critical patent/WO2018221753A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate

Definitions

  • the present invention relates to semiconductor devices, and more particularly, to a MEMS (Micro Electro Mechanical Systems) device and a manufacturing method thereof.
  • MEMS Micro Electro Mechanical Systems
  • MEMS devices refer to devices integrating mechanical components, sensors, actuators, and electronic circuits on a single silicon substructure, and are currently available as printer heads, pressure sensors, acceleration sensors, gyroscopes, and DMDs. (Projector).
  • the main part is fabricated using a semiconductor process, but a semiconductor integrated circuit needs to form a three-dimensional shape as compared to a process of processing a plane, and thus a process not used for fabricating a semiconductor integrated circuit needs to be used.
  • An object of the present invention is to provide a MEMS device and a method of manufacturing the same which can reduce cost and are excellent in efficiency.
  • MEMS device according to an aspect of the present invention.
  • a MEMS structure spaced apart from the upper portion of the lower structure;
  • a light absorbing structure including a plate portion spaced apart from the upper portion of the MEMS structure and a via connection portion extending from the plate portion to the MEMS structure.
  • an area of the plate portion may be larger than an area of a sensor in the MEMS structure.
  • the light absorbing structure may include a metal layer capable of absorbing infrared rays
  • the MEMS structure may include a material whose resistance varies according to heat transmitted through the via connection part.
  • the lower structure may be a substrate structure including a read out integrated circuit (ROIC).
  • ROIIC read out integrated circuit
  • the MEMS structure includes: a first MEMS structure for processing a first wavelength band signal spaced apart from an upper portion of the lower structure; And a second MEMS structure spaced apart from the first MEMS structure and configured to process a second wavelength band signal, wherein the electrical connection structure includes: the lower structure, the first MEMS structure, and the lower structure; The second MEMS structure is electrically connected to each other, and the plate part is disposed to be spaced apart from the upper portion of the second MEMS structure, and the via connection part is a first via connection part extending from the plate part to the first MEMS structure. ; And a second via connection part extending from the plate part to the second MEMS structure.
  • the area of the plate portion may be larger than the area of the sensor in the first MEMS structure and / or the area of the sensor in the second MEMS structure.
  • the first wavelength has a wavelength smaller than the second wavelength, and the separation distance between the lower structure and the first MEMS structure is about 1/4 times the first wavelength, and the lower structure and the first wavelength.
  • the separation distance between the two MEMS structures may be about 1/4 times the second wavelength.
  • the light absorption structure includes a first light absorption structure having the first via connection; And a second light absorbing structure including the second via connection part, wherein the first light absorbing structure and the second light absorbing structure may be spaced apart from each other to block mutual heat conduction.
  • the first via connection unit may be disposed to be spaced apart without directly contacting the second MEMS structure.
  • MEMS device manufacturing method comprises a first step of forming a lower structure; Forming a sacrificial layer on the lower structure; Forming a memes structure on the sacrificial layer; A fourth step of additionally forming a sacrificial layer on the MEMS structure; A fifth step of forming a light absorption structure having a via connection portion extending from the MEMS structure to the MEMS structure; And a sixth step of removing the sacrificial layers.
  • MEMS device manufacturing method comprises a first step of forming a lower structure; A second step of forming a first sacrificial layer on the lower structure; A third step of forming a first MEMS structure on the first sacrificial layer; A fourth step of forming a second sacrificial layer on the first MEMS structure; A fifth step of forming a second MEMS structure on the second sacrificial layer; A sixth step of forming a third sacrificial layer on the second MEMS structure; A seventh light-absorbing structure having a first via connection portion extending from the second memes structure to the first memes structure and a second via connection portion extending from the second memes structure to the second memes structure; step; And an eighth step of removing the sacrificial layers.
  • the sacrificial layers may include an amorphous carbon layer as spin on carbon, and the removal of the sacrificial layers may be performed using oxygen (O 2) and / or ozone (O 3) plasma. It may be performed by a dry etching process.
  • the internal separation distance can be easily adjusted according to the device, the efficiency is remarkably excellent, compared to the conventional MEMS device in terms of performance and shape, and utilize the existing semiconductor process MEMS devices can be implemented.
  • the scope of the present invention is not limited by these effects.
  • 1 to 10B are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to an embodiment of the present invention.
  • 11A-11B are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to a modified embodiment of the present invention.
  • 12A through 12B are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to another modified embodiment of the present invention.
  • top or bottom may be used to describe the positional relationship of certain elements to other elements as illustrated in the figures. Furthermore, it may be understood that these relative terms are intended to include the different directions of the component as well as the direction depicted in the figures. For example, if a component is turned over in the figures, elements depicted as being on the face of the top of the other elements are oriented on the face of the bottom of the other elements. Thus, the example “top” may include both “bottom” and “top” directions depending on the particular direction of the drawing.
  • 1 to 10B are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to an embodiment of the present invention.
  • the lower structure 15 may be a substrate structure including a read out integrated circuit (ROIC) that is a suitable logic circuit.
  • the read integrated circuit can be manufactured by forming a CMOS device on a substrate.
  • the lower structure 15 may further include an insulating layer (not shown) on the substrate 11, lower electrodes 13 and 14, and a reflective layer 12.
  • the lower structure 15 may include a metal pattern, such as the lower electrodes 13 and 14 and / or the reflective layer 12.
  • the lower electrodes 13 and 14 and / or the reflective layer 12 may be formed to protrude on the insulating layer or may be formed by forming a trench pattern in the insulating layer and then filling it with a metal layer.
  • the lower electrodes 13 and 14 may be used to electrically connect the read integrated circuit device and the MEMS device.
  • the reflective layer 12 may be used to reflect light incident on the lower structure 15.
  • an amorphous carbon film which will be described later, is formed by chemical vapor deposition. This can be very advantageous in terms of planarization.
  • a first sacrificial layer 17a is formed on the lower structure 15.
  • the thickness of the first sacrificial layer 17a may be appropriately selected in consideration of the separation distance between the lower structure 15 and the upper structure to be implemented in a subsequent process and subsequent removal burden.
  • the via hole 16 penetrating the first sacrificial layer 17a and the insulating layer 21 is formed.
  • the first sacrificial layer 17a may include an amorphous carbon layer
  • the insulating layer 21 may include an oxide film or a nitride film.
  • the lower electrode 14 may be exposed through the via hole 16.
  • the sacrificial layer may be a temporary structure that is used to support the upper structure described later in an intermediate step but finally at least part or all is removed.
  • the sacrificial layer forming process may be performed to be compatible with a back-end process such as a metal wiring process of a semiconductor device. That is, the sacrificial layer may be formed using a post-process used in manufacturing an existing semiconductor device rather than a MEMS process. Therefore, following the formation of the lower structure, it is possible to proceed with the sacrificial layer and the subsequent metal process by applying most of the process technologies used in the existing semiconductor post-process as it is to lower the manufacturing cost and facilitate mass production.
  • the sacrificial layer may be, for example, an amorphous carbon layer as spin on carbon.
  • the amorphous carbon layer may be formed by various techniques, and may be, for example, an amorphous carbon layer coated by a rotation method or an amorphous carbon layer formed by plasma enhanced CVD (PECVD).
  • PECVD plasma enhanced CVD
  • the present inventors found that a sacrificial layer composed of an amorphous carbon layer as spin on carbon, rather than a sacrificial layer composed of an amorphous carbon layer formed by plasma enhanced CVD (PECVD), has a structure of the lower structure 15. It can be confirmed that it can be formed flat without the effect due to the pattern, the uniformity is relatively improved, the cost reduction and productivity can be relatively improved.
  • the sacrificial layer may be formed using a material such as polyimide, but it is not easy to apply a high temperature process in a subsequent metal deposition process due to problems such as moisture resorption, so it is not a CVD method but a lift off method.
  • the metal should be deposited using. In this case, there is a disadvantage in that the step coverage is not good and many impurities remain inside the metal.
  • the via hole or the contact hole is formed in the polyimide sacrificial layer
  • the via hole or the contact hole must be covered by an additional process before performing the subsequent process due to outgassing of the polyimide.
  • Forming at least two photolithography processes are required. For example, two photolithography processes are required in which a polyimide sacrificial layer is formed, a sacrificial layer is first patterned, and a lower passivation layer is secondly patterned to form contact holes.
  • the amorphous carbon layer does not have a problem such as outgassing, so that the amorphous carbon layer does not need to additionally cover the exposed portion of the amorphous carbon layer, thereby implementing a single photolithography process. This is possible.
  • the present inventor By replacing the sacrificial layer with an amorphous carbon film in the polyimide, the present inventor not only prevents problems such as water reabsorption, poor step coverage, impurities in subsequent processes, etc., but also uses the characteristics of the amorphous carbon film to make the via hole or the contact hole. It provides a manufacturing method that can drastically reduce the manufacturing cost by simplifying the number of photolithography process from one to two times in the forming process. Furthermore, the effect of the sacrificial layer composed of the amorphous carbon layer as spin on carbon rather than the sacrificial layer composed of the amorphous carbon layer formed by plasma enhanced CVD (PECVD) due to the pattern of the underlying structure. It can be formed flat without it provides a manufacturing method in which uniformity is relatively improved and cost reduction and productivity can be relatively improved.
  • PECVD plasma enhanced CVD
  • the metal anchor 22 may be formed to be connected to the lower electrode 14 through the contact hole 16.
  • the metal anchor 22 may be formed by forming and patterning a metal layer on the lower electrode 14 exposed by the contact hole 16 by CVD or PVD.
  • a metal layer a tungsten (W) layer is mentioned, for example.
  • This metal anchor 22 may be used as via plugs that electrically connect the lower electrode 14 with the upper structure.
  • the resistive element material layer 24 is formed on the absorbing layer 23.
  • the absorber layer 23 is a metal layer capable of absorbing infrared rays
  • the resistive element material layer 24 may be a thin film layer including a material whose resistance varies according to heat transmitted through a via connection part implemented in a subsequent process.
  • the resistance element material layer 24 is a material whose resistance varies according to the amount of infrared rays or heat absorbed, and may include, for example, amorphous silicon, vanadium oxide, or the like.
  • An insulating layer 25 is formed on the resistive material layer 24.
  • the insulating layers 21 and 25 disposed above and below the absorbing layer 23 and the resistive material layer 24 may also serve as a supporting layer capable of securing mechanical strength.
  • the insulating layer 21, the metal anchor 22, the absorbing layer 23, the resistive material layer 24, and the insulating layer 25 may implement at least a portion of the first MEMS structure 20. Meanwhile, at least some of the metal anchor 22, the absorbing layer 23, and the resistance element material layer 24 formed to fill the space of the contact hole 16 may form the lower structure 15 and the first MEMS structure 20. It can be understood as the first electrical connection structure 19 for electrically connecting.
  • a patterning process of removing a portion of the first MEMS structure 20 is performed. Through the patterning process, a through hole 27 exposing a part of the first sacrificial layer 17a may be formed.
  • the through hole 27 may be understood as at least a portion of a passage for the material for removing the first sacrificial layer 17a to proceed to the first sacrificial layer 17a in a subsequent process.
  • a second sacrificial layer 17b is formed on the first sacrificial layer 17a and the first memes structure 20.
  • the second sacrificial layer 17b may be made of the same material formed by the same manufacturing method as the above-described first sacrificial layer 17a.
  • the contact hole 36 penetrating the first sacrificial layer 17a and the second sacrificial layer 17b to expose the lower electrode 13.
  • the metal anchor 32 may be formed to be connected to the lower electrode 13 through the contact hole 36.
  • the metal anchor 32 may be formed by forming and patterning a metal layer on the lower electrode 13 exposed by the contact hole 36 by CVD or PVD. As such a metal layer, a tungsten (W) layer is mentioned, for example.
  • the metal anchor 32 may be used as via plugs that electrically connect the lower electrode 13 to the upper structure.
  • the absorption layer 33 may be uniformly formed on the metal anchor 32 and the insulating layer 31.
  • the absorber layer 33 may be a metal layer capable of absorbing infrared rays.
  • the resistive element material layer 34 is formed on the absorbing layer 33.
  • the resistive element material layer 34 may be a thin film layer including a material whose resistance varies according to heat transferred through a via connection part implemented in a subsequent process.
  • the resistance element material layer 34 is a material whose resistance varies depending on the amount of infrared rays or heat absorbed, and may include, for example, amorphous silicon, vanadium oxide, or the like.
  • An insulating layer 35 is formed on the resistive material layer 34.
  • the insulating layers 31 and 35 disposed above and below the absorbing layer 33 and the resistive material layer 34 may also serve as a supporting layer capable of securing mechanical strength.
  • the insulating layer 31, the metal anchor 32, the absorbing layer 33, the resistive material layer 34, and the insulating layer 35 may implement at least a portion of the second MEMS structure 30. Meanwhile, at least some of the metal anchor 32, the absorbing layer 33, and the resistive element material layer 34 formed to fill the space of the contact hole 36 may form the lower structure 15 and the second MEMS structure 30. It can be understood as a second electrical connection structure 39 for electrically connecting.
  • a patterning process of removing a portion of the second MEMS structure 30 is performed.
  • the patterning process not only the size, shape and / or arrangement of the second MEMS structure 30 can be determined, but also the through hole 37 exposing a part of the second sacrificial layer 17b may be formed.
  • the through hole 37 may be understood as at least a portion of a passage for the material for removing the first sacrificial layer 17a and the second sacrificial layer 17b to the second sacrificial layer 17b in a subsequent process.
  • the light having the via connecting portions 49a and 49b disposed to be spaced apart from the second MEMS structure 30 and extending to the first MEMS structure 20 and the second MEMS structure 30.
  • the absorbent structure 40 is formed.
  • the light absorption structure 40 includes a plate portion 44 disposed on the third sacrificial layer 17c; And via connectors 49a and 49b connected to the first MEMS structure 20 and the second MEMS structure 30 from the plate portion 44.
  • the third sacrificial layer 17c is formed on the second MEMS structure 30.
  • the third sacrificial layer 17c may be made of the same material formed by the same manufacturing method as the first sacrificial layer 17a described above.
  • the first via hole 46 penetrating the third sacrificial layer 17c, the second MEMS structure 30, and the second sacrificial layer 17b and the second via hole 46 penetrating the third sacrificial layer 17c may be formed.
  • the first via hole 46 is formed to expose the resistive material layer 24 of the first MEMS structure 20, and the second via hole 46 is the resistive material layer 34 of the second MEMS structure 30. Can be formed to expose.
  • the light absorbing structure 40 is completed by forming the insulating layer 41, the metal layer 42 capable of absorbing light, and the insulating layer 43.
  • the insulating layers 41 and 43 disposed above and below the metal layer 42 capable of absorbing light may also serve as a supporting layer for securing mechanical strength.
  • At least a portion of the insulating layer 41, the metal layer 42 capable of absorbing light, and the insulating layer 43 formed to fill the space of the first via hole 46 may absorb the thermal energy of the light absorbed from the plate portion 44. It may be understood as a first via connector 49a that transfers to the first MEMS structure 20. In addition, at least a portion of the insulating layer 41 formed to fill the space of the second via hole 46, the metal layer 42 capable of absorbing light, and the insulating layer 43 is formed of the light absorbed from the plate portion 44. It can be understood as a second via connection 49b that transfers thermal energy to the second MEMS structure 30.
  • the plate 44 constituting the light absorbing structure 40 is disposed spaced apart from the upper portion of the second MEMS structure 30, the area of the plate 44 is the area of the sensor in the first MEMS structure 20 and And / or larger than the area of the sensor in the second MEMS structure 30. According to this configuration, the area of the absorber layer can be increased relatively, thereby improving the efficiency of the MEMS device.
  • the third sacrificial layer 17c, the second sacrificial layer 17b, and the first sacrificial layer 17a may be removed using a dry etching process or a wet etching process.
  • the dry etching may be performed using oxygen (O 2) and / or ozone (O 3) plasma.
  • the through holes 27 and 37 may be used as a passage through which an etchant (for example, oxygen and / or ozone of a dry etching process) is introduced.
  • an etchant for example, oxygen and / or ozone of a dry etching process
  • the first memes structure is removed.
  • a space 26b between the 20 and the second MEMS structure 30 is formed, and the space between the second MEMS structure 30 and the plate part 44 is removed by removing the third sacrificial layer 17c. 26c can be formed.
  • a wavelength of a dual band can be detected.
  • signals of different band wavelengths may be independently detected in the basic single structure. That is, the first via connecting portion 49a for transferring the thermal energy of light absorbed from the plate 44 to the first memes structure 20 and the thermal energy of light absorbed from the plate 44 to the second memes structure 30. Since the second via connection 49b for transmitting is individually provided, each of the single MEMS devices can independently detect a signal having a dual band wavelength.
  • the first wavelength has a wavelength smaller than the second wavelength.
  • the first wavelength is 4 ⁇ m and the second wavelength is 8 ⁇ m
  • the separation distance d1 between the lower structure 15 and the first MEMS structure 20 is approximately 1/4 of the first wavelength.
  • the distance d2 between the lower structure 15 and the second MEMS structure 30 may be set to about 1/4 times the second wavelength.
  • the MEMS device according to the embodiment of the present invention described above is implemented by a method of manufacturing a MEMS device using a sacrificial layer in a read integrated circuit to form an upper structure having a three-dimensional structure and a lower structure having a multi-layer structure.
  • the sacrificial layer is coated on the read-integrated circuit to form a lower structure
  • the second sacrificial layer is coated to form an upper structure
  • the third sacrificial layer is coated to form a top structure to fabricate a MEMS device.
  • Sacrificial layer removal can be removed using an oxygen (O 2 ) and / or ozone (O 3 ) plasma, including dry etching.
  • the uppermost structure and the lower multilayer MEMS structure are connected using separate through holes.
  • the rotationally coated sacrificial layer can form the structure flat without the influence of the pattern of the substructure to improve uniformity, reduce cost and improve productivity.
  • a signal having a dual band wavelength is controlled by adjusting the height of the empty space between the read integrated circuit and the lower structure and the empty space between the read integrated circuit and the upper structure, which are generated after removing the sacrificial layer.
  • the wavelength absorbed at the top structure can be transmitted to each underlying structure to improve the MEMS sensor performance.
  • Independently detected dual-band wavelengths can be applied to a variety of applications and to improve infrared performance.
  • the sacrificial layer is advantageously planarized without affecting the pattern of the upper structure, and is also easy to manufacture a MEMS device having a multilayer structure.
  • the function of the structure is formed as an absorbing layer on the uppermost layer, the absorbed wavelength can be transmitted to the lower multilayer structure through each through hole.
  • the MEMS structure fabricated in this way is applied to an infrared sensor, signals of the dual band wavelength can be detected as independent through-holes, thereby minimizing the area of MEMS devices and increasing the absorption layer area, thereby improving performance, reducing manufacturing cost, and improving productivity. You can.
  • the empty space formed after removing the sacrificial layer may have a different thickness depending on the sacrificial layer coating method, thereby selecting and detecting various band wavelengths.
  • FIGS. 1 to 9 are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to a modified embodiment of the present invention.
  • the steps of FIGS. 1 to 9 are performed in common.
  • FIGS. 10A and 10B illustrate a first light absorbing structure in which the light absorbing structure 40 has a first via connection portion 49a as compared to FIGS. 10A and 10B; And a second light absorbing structure having a second via connection portion 49b. That is, by forming a separation space 47 for cutting off a portion of the plate portion 44, the first light absorbing structure disposed on one side of the separation space 47 and the second disposed on the other side of the separation space 47 The two light absorption structures are spaced apart from each other to block mutual heat conduction. According to this structure, mutual interference between the first MEMS structure 20 for the first wavelength band signal processing and the second MEMS structure 30 for the second wavelength band signal processing can be minimized to effectively perform signal processing. .
  • FIGS. 1 to 9 are cross-sectional views sequentially illustrating a method of manufacturing a MEMS device according to another modified embodiment of the present invention.
  • the steps of FIGS. 1 to 9 are commonly performed.
  • first via connecting portion 49a is arranged to be spaced apart without directly contacting the second MEMS structure 30 as compared with FIGS. 10A and 10B. According to this structure, mutual interference between the first MEMS structure 20 for the first wavelength band signal processing and the second MEMS structure 30 for the second wavelength band signal processing can be minimized to effectively perform signal processing. .
  • the MEMS structure disposed between the lower structure 15 and the light absorbing structure 40 is a two-layer structure.
  • the technical idea of the present invention which discloses a light absorbing structure having a via connection portion extending from the plate portion spaced apart from the upper portion of the MEMS structure to the MEMS structure is not limited to a specific configuration of the MEMS structure.
  • the MEMS structure disposed between the lower structure 15 and the light absorbing structure 40 may be a single layer structure or a three or more layers structure.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

La présente invention porte sur un dispositif MEMS utilisant un film de carbone amorphe comme couche sacrificielle et sur son procédé de fabrication. Selon un mode de réalisation de la présente invention, l'invention se rapporte à un dispositif MEMS comprenant : une structure inférieure ; une structure MEMS disposée de sorte à être espacée d'une partie supérieure de la structure inférieure ; une structure de raccordement électrique raccordant électriquement la structure inférieure et la structure MEMS ; et une structure d'absorption optique ayant une partie de plaque disposée de sorte à être espacée d'une partie supérieure de la structure MEMS et une partie de raccordement de trou d'interconnexion s'étendant depuis la partie de plaque jusqu'à la structure MEMS.
PCT/KR2017/005569 2017-05-29 2017-05-29 Dispositif mems et son procédé de fabrication Ceased WO2018221753A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112551478A (zh) * 2020-12-11 2021-03-26 上海集成电路研发中心有限公司 一种新型红外探测器及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307194B1 (en) * 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
US20020179837A1 (en) * 2001-06-01 2002-12-05 Michael Ray Advanced high speed, multi-level uncooled bolometer and method for fabricating same
KR20040087025A (ko) * 2003-04-04 2004-10-13 주식회사 나노위즈 다기능을 포함한 다수의 레벨구조형 비냉각 적외선영상센서 및 그 제조방법
KR20090065941A (ko) * 2007-12-18 2009-06-23 한국전자통신연구원 다층 구조의 볼로미터 및 그 제조 방법
JP2010019602A (ja) * 2008-07-08 2010-01-28 Nec Corp ２波長熱型赤外線アレイセンサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307194B1 (en) * 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
US20020179837A1 (en) * 2001-06-01 2002-12-05 Michael Ray Advanced high speed, multi-level uncooled bolometer and method for fabricating same
KR20040087025A (ko) * 2003-04-04 2004-10-13 주식회사 나노위즈 다기능을 포함한 다수의 레벨구조형 비냉각 적외선영상센서 및 그 제조방법
KR20090065941A (ko) * 2007-12-18 2009-06-23 한국전자통신연구원 다층 구조의 볼로미터 및 그 제조 방법
JP2010019602A (ja) * 2008-07-08 2010-01-28 Nec Corp ２波長熱型赤外線アレイセンサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112551478A (zh) * 2020-12-11 2021-03-26 上海集成电路研发中心有限公司 一种新型红外探测器及制备方法
CN112551478B (zh) * 2020-12-11 2024-06-07 上海集成电路研发中心有限公司 一种红外探测器及制备方法

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