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CA2880718A1 - Transfert selectif de dispositif a semiconducteur vers un substrat de systeme - Google Patents

Transfert selectif de dispositif a semiconducteur vers un substrat de systeme Download PDF

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Publication number
CA2880718A1
CA2880718A1 CA2880718A CA2880718A CA2880718A1 CA 2880718 A1 CA2880718 A1 CA 2880718A1 CA 2880718 A CA2880718 A CA 2880718A CA 2880718 A CA2880718 A CA 2880718A CA 2880718 A1 CA2880718 A1 CA 2880718A1
Authority
CA
Canada
Prior art keywords
substrate
micro
pixel
layer
micro device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2880718A
Other languages
English (en)
Inventor
Reza Chaji
Ehsanallah Fathi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ignis Innovation Inc
Original Assignee
Ignis Innovation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ignis Innovation Inc filed Critical Ignis Innovation Inc
Priority to CA2880718A priority Critical patent/CA2880718A1/fr
Priority to US15/002,662 priority patent/US20160219702A1/en
Priority to CN201680006964.4A priority patent/CN107851586B/zh
Priority to PCT/IB2016/050307 priority patent/WO2016116889A1/fr
Priority to CN202110684431.4A priority patent/CN113410146A/zh
Priority to DE112016000447.8T priority patent/DE112016000447T5/de
Priority to US15/060,942 priority patent/US10134803B2/en
Publication of CA2880718A1 publication Critical patent/CA2880718A1/fr
Priority to CN202310495809.5A priority patent/CN116525532A/zh
Priority to CN201780013977.9A priority patent/CN109075119B/zh
Priority to US15/653,120 priority patent/US10700120B2/en
Priority to KR1020257021629A priority patent/KR20250109238A/ko
Priority to CN201880047604.8A priority patent/CN110892530B/zh
Priority to TW107124809A priority patent/TWI820033B/zh
Priority to DE112018003713.4T priority patent/DE112018003713T5/de
Priority to TW112137111A priority patent/TWI879121B/zh
Priority to CN202311598175.2A priority patent/CN117613166A/zh
Priority to PCT/IB2018/055347 priority patent/WO2019016730A1/fr
Priority to KR1020237044348A priority patent/KR102828398B1/ko
Priority to KR1020207004053A priority patent/KR102618938B1/ko
Priority to US16/107,692 priority patent/US10847571B2/en
Priority to US16/107,680 priority patent/US20180358404A1/en
Priority to US16/912,049 priority patent/US11735623B2/en
Priority to US16/931,132 priority patent/US11728302B2/en
Priority to US17/200,467 priority patent/US12349527B2/en
Priority to US17/365,708 priority patent/US11476216B2/en
Priority to US17/365,634 priority patent/US11735545B2/en
Priority to US17/569,900 priority patent/US11735546B2/en
Priority to US17/569,918 priority patent/US11735547B2/en
Priority to US17/569,893 priority patent/US11728306B2/en
Priority to US17/730,719 priority patent/US12199058B2/en
Priority to US18/177,613 priority patent/US12402466B2/en
Priority to US18/895,330 priority patent/US20250015030A1/en
Priority to US19/021,150 priority patent/US20250160095A1/en
Priority to US19/024,435 priority patent/US20250160096A1/en
Abandoned legal-status Critical Current

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Classifications

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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32235—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a via metallisation of the item
    • H—ELECTRICITY
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/80004—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/80006—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8038—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/80385—Shape, e.g. interlocking features
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80905—Combinations of bonding methods provided for in at least two different groups from H01L2224/808 - H01L2224/80904
    • H01L2224/80907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/9202—Forming additional connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CA2880718A 2015-01-23 2015-01-28 Transfert selectif de dispositif a semiconducteur vers un substrat de systeme Abandoned CA2880718A1 (fr)

Priority Applications (34)

Application Number Priority Date Filing Date Title
CA2880718A CA2880718A1 (fr) 2015-01-28 2015-01-28 Transfert selectif de dispositif a semiconducteur vers un substrat de systeme
US15/002,662 US20160219702A1 (en) 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate
CN201680006964.4A CN107851586B (zh) 2015-01-23 2016-01-21 到受体衬底的选择性微型器件转移
PCT/IB2016/050307 WO2016116889A1 (fr) 2015-01-23 2016-01-21 Transfert sélectif de micro-dispositif vers un substrat récepteur
CN202110684431.4A CN113410146A (zh) 2015-01-23 2016-01-21 到受体衬底的选择性微型器件转移
DE112016000447.8T DE112016000447T5 (de) 2015-01-23 2016-01-21 Selektiver Mikrovorrichtungstransfer zu einem Empfängersubstrat
US15/060,942 US10134803B2 (en) 2015-01-23 2016-03-04 Micro device integration into system substrate
CN202310495809.5A CN116525532A (zh) 2015-01-23 2017-03-06 集成器件制造方法
CN201780013977.9A CN109075119B (zh) 2015-01-23 2017-03-06 集成器件制造方法
US15/653,120 US10700120B2 (en) 2015-01-23 2017-07-18 Micro device integration into system substrate
KR1020237044348A KR102828398B1 (ko) 2015-01-23 2018-07-18 시스템 기판 내로의 마이크로 디바이스 통합
PCT/IB2018/055347 WO2019016730A1 (fr) 2015-01-23 2018-07-18 Intégration de micro-dispositif dans un substrat de système
KR1020207004053A KR102618938B1 (ko) 2015-01-23 2018-07-18 시스템 기판 내로의 마이크로 디바이스 통합
TW107124809A TWI820033B (zh) 2015-01-23 2018-07-18 整合於系統基板中之微裝置
DE112018003713.4T DE112018003713T5 (de) 2015-01-23 2018-07-18 Mikrovorrichtungsintegration in systemsubstrat
TW112137111A TWI879121B (zh) 2015-01-23 2018-07-18 整合於系統基板中之微裝置
CN202311598175.2A CN117613166A (zh) 2015-01-23 2018-07-18 集成光学系统
KR1020257021629A KR20250109238A (ko) 2015-01-23 2018-07-18 시스템 기판 내로의 마이크로 디바이스 통합
CN201880047604.8A CN110892530B (zh) 2015-01-23 2018-07-18 集成光学系统
US16/107,680 US20180358404A1 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/107,692 US10847571B2 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/912,049 US11735623B2 (en) 2015-01-23 2020-06-25 Micro device integration into system substrate
US16/931,132 US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate
US17/200,467 US12349527B2 (en) 2015-01-23 2021-03-12 Microdevice integration into system substrate
US17/365,708 US11476216B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/365,634 US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,900 US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,918 US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/730,719 US12199058B2 (en) 2015-01-23 2022-04-27 Selective micro device transfer to receiver substrate
US18/177,613 US12402466B2 (en) 2015-01-23 2023-03-02 Micro device integration into system substrate
US18/895,330 US20250015030A1 (en) 2015-01-23 2024-09-24 Selective micro device transfer to receiver substrate
US19/021,150 US20250160095A1 (en) 2015-01-23 2025-01-14 Microdevice integration into system substrate
US19/024,435 US20250160096A1 (en) 2015-01-23 2025-01-16 Micro device integration into system substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA2880718A CA2880718A1 (fr) 2015-01-28 2015-01-28 Transfert selectif de dispositif a semiconducteur vers un substrat de systeme

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CA2880718A1 true CA2880718A1 (fr) 2016-07-28

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017149521A1 (fr) * 2016-03-04 2017-09-08 Vuereal Inc. Intégration de micro-dispositif dans un substrat de système
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
CN110892530A (zh) * 2015-01-23 2020-03-17 维耶尔公司 到系统衬底中的微装置集成
US10847571B2 (en) 2015-01-23 2020-11-24 Vuereal Inc. Micro device integration into system substrate
US11476216B2 (en) 2015-01-23 2022-10-18 Vuereal Inc. Selective micro device transfer to receiver substrate
US12075565B2 (en) 2016-01-21 2024-08-27 Vuereal Inc. Selective transfer of micro devices
US12402466B2 (en) 2015-01-23 2025-08-26 Vuereal Inc. Micro device integration into system substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11735547B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
US11735546B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
CN110892530A (zh) * 2015-01-23 2020-03-17 维耶尔公司 到系统衬底中的微装置集成
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
US10847571B2 (en) 2015-01-23 2020-11-24 Vuereal Inc. Micro device integration into system substrate
US11476216B2 (en) 2015-01-23 2022-10-18 Vuereal Inc. Selective micro device transfer to receiver substrate
US11728306B2 (en) 2015-01-23 2023-08-15 Vuereal Inc. Selective micro device transfer to receiver substrate
US11728302B2 (en) 2015-01-23 2023-08-15 Vuereal Inc. Selective micro device transfer to receiver substrate
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
US11735623B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Micro device integration into system substrate
US12402466B2 (en) 2015-01-23 2025-08-26 Vuereal Inc. Micro device integration into system substrate
US11735545B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
CN110892530B (zh) * 2015-01-23 2023-12-19 维耶尔公司 集成光学系统
US12349527B2 (en) 2015-01-23 2025-07-01 Vuereal Inc. Microdevice integration into system substrate
US12199058B2 (en) 2015-01-23 2025-01-14 Vuereal Inc. Selective micro device transfer to receiver substrate
US12075565B2 (en) 2016-01-21 2024-08-27 Vuereal Inc. Selective transfer of micro devices
WO2017149521A1 (fr) * 2016-03-04 2017-09-08 Vuereal Inc. Intégration de micro-dispositif dans un substrat de système

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