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WO2018138961A1 - Substrat de circuit céramique, module de puissance, et dispositif d'émission de lumière - Google Patents

Substrat de circuit céramique, module de puissance, et dispositif d'émission de lumière Download PDF

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Publication number
WO2018138961A1
WO2018138961A1 PCT/JP2017/033853 JP2017033853W WO2018138961A1 WO 2018138961 A1 WO2018138961 A1 WO 2018138961A1 JP 2017033853 W JP2017033853 W JP 2017033853W WO 2018138961 A1 WO2018138961 A1 WO 2018138961A1
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WIPO (PCT)
Prior art keywords
ceramic circuit
circuit board
conductor layer
metal film
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/033853
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English (en)
Japanese (ja)
Inventor
輝行 本多
細井　義博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of WO2018138961A1 publication Critical patent/WO2018138961A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Definitions

  • the present invention relates to a ceramic circuit board, a power module, and a light emitting device.
  • a ceramic circuit board for example, Cu (copper) may be used as a conductor material such as signal wiring for the purpose of keeping electric resistance low (see, for example, Patent Document 1).
  • the semiconductor element mounted on the surface of the ceramic circuit board is sealed with a resin material for protection (see, for example, Patent Document 2).
  • a ceramic circuit board includes a ceramic substrate, a conductive layer made of Cu disposed on a surface of the ceramic substrate, and a mounting region on which the semiconductor element is mounted, and at least the mounting region of the conductive layer.
  • the metal film is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb.
  • a power module includes the above-described ceramic circuit board, a power element that is a semiconductor element mounted in the mounting region, a casing in which the ceramic circuit board and the power element are stored, and the casing A sealing resin that is filled and seals the power element.
  • a light-emitting device of the present disclosure includes the above-described ceramic circuit board, a light-emitting element that is a semiconductor element mounted in the mounting region, and a sealing resin that seals the light-emitting element.
  • the ceramic circuit board 1 includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 that covers the conductor layer 3.
  • the ceramic substrate 2 is a substrate for mounting a semiconductor element made of a ceramic sintered body and having a relatively large amount of heat generation such as a power element or a light emitting element.
  • the ceramic substrate 2 has characteristics such as high mechanical strength and high heat transfer characteristics (cooling characteristics).
  • a known material can be used as the ceramic sintered body.
  • an alumina (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, a silicon nitride (Si 3 N 4 ) sintered body, or the like can be used.
  • the ceramic substrate 2 can be manufactured by a known manufacturing method.
  • a known production method can be produced, for example, by adding a sintering aid to a raw material powder such as alumina, forming it into a substrate, and then firing it.
  • the conductor layer 3 of the present embodiment is made of Cu (copper) and is disposed on at least one surface of the ceramic substrate 2 in a pattern shape such as a wiring shape.
  • the conductor layer 3 is electrically connected to a semiconductor element to be mounted by a connecting member such as a bonding wire. Furthermore, the conductor layer 3 is electrically connected to an external electric circuit or the like, and transmits electric power and control signals between the semiconductor element and the external electric circuit.
  • the conductor layer 3 Since the semiconductor element and the conductor layer 3 are electrically connected, at least a part of the conductor layer 3 is disposed on the same surface as the semiconductor element mounting surface of the ceramic substrate 2. If it does so, sealing resin which protects a semiconductor element will cover a part of conductor layer 3 which consists of Cu with a semiconductor element.
  • an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, and the oxide film is easily broken. In the portion where the sealing resin covers the conductor layer 3, the bonding strength may be reduced due to breakdown in the film.
  • the conductor layer 3 can be formed by printing and applying a paste containing Cu powder and a binder resin, and simultaneously firing with the ceramic substrate 2 to form a metallized layer.
  • the conductor layer 3 can be formed by bonding a Cu foil (Cu plate) on the ceramic substrate 2 or forming a Cu plating film on the ceramic substrate 2.
  • the paste When the paste is printed and applied, it may be printed and applied in a pattern shape to be formed in advance.
  • a pattern may be formed by etching or the like after bonding to the entire surface.
  • an underlayer may be formed by a thin film or a metallized layer and formed by electrolytic plating or by electroless plating using a mask.
  • the conductor layer 3 is provided with a mounting region 3a for mounting the semiconductor element 6 via, for example, a bonding material 5 containing Ag.
  • the metal coating 4 covers a portion other than the mounting region 3 a among the exposed portions of the conductor layer 3.
  • the portion other than the mounting region 3a of the conductor layer 3 is a portion where the sealing resin is directly contacted and joined to the conductor layer 3, and is a portion where a copper oxide film is formed.
  • this portion is covered with a metal film 4 made of a material mainly containing a specific metal species.
  • the metal film 4 only needs to cover at least a portion other than the mounting area 3a. Even if the metal film 4 is configured not to cover the mounting area 3a as in the present embodiment, the mounting area 3a as in the second embodiment described later. Also, it may be configured to cover.
  • the metal film 4 is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb.
  • the metal film 4 may be made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt.
  • the metal film 4 may be made of a material mainly composed of Pd.
  • the main component is a material occupying 90% by mass or more in the material constituting the metal film 4.
  • the material constituting the metal film 4 may contain, for example, P (phosphorus), B (boron), etc. in addition to the main component.
  • the metal film 4 is a kind whose main component is selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb, so that it becomes a high temperature state due to heat generation of the mounted semiconductor element 6.
  • a passive film which is an oxide film having a relatively small thickness is formed on the surface of the metal film 4, and the film hardly grows (thickness does not increase). Furthermore, this thin passive film is firmly bonded by hydrogen bonding with the sealing resin.
  • the conductor layer 3 made of Cu is covered with the metal film 4, the copper oxide film which causes the reduction of the bonding strength is not formed on the surface because the Cu is not oxidized even at a high temperature state. Therefore, in the ceramic circuit board 1 of this embodiment, even when the semiconductor element 6 is mounted and resin-sealed, the bonding strength between the ceramic circuit board 1 and the sealing resin can be improved.
  • Ceramic circuit boards differing only in the presence or absence of the metal film 4 were prepared and sealed with resin, and then the tensile strength of the sealing resin was measured by a tensile test.
  • the ceramic circuit board 1 of the present embodiment provided with the metal film 4 exhibited a tensile strength approximately twice that of the ceramic circuit board not provided with the metal film 4.
  • the metal film 4 may be formed by any method as long as it can cover a portion other than the mounting region 3 a of the conductor layer 3.
  • a film may be formed on the conductor layer 3 by a thin film forming method such as sputtering or vapor deposition, or a plating method such as electroless plating or electrolytic plating.
  • the metal film 4 is a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt among Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb. When it consists of, it is easy to form by the plating method which is low-cost and excellent in mass productivity compared with vapor deposition etc.
  • the metal film 4 may directly cover the conductor layer 3 made of Cu, and a base layer made of Ni or the like may be provided between the metal film 4 and the conductor layer 3.
  • the ceramic substrate 2, the conductor layer 3, and the metal coating 4 have shapes, thicknesses, widths, and the like according to required characteristics depending on the type of semiconductor element to be mounted, the type of device in which the ceramic circuit board 1 is incorporated, and the like.
  • the dimensions may be set as appropriate.
  • the ceramic substrate 2 has a rectangular plate shape, and may have a length of 2 to 60 mm, a width of 2 to 60 mm, and a thickness of 0.2 to 1.0 mm.
  • the conductor layer 3 has a predetermined pattern shape and may have a thickness of 0.01 to 4.0 mm.
  • the metal film 4 has substantially the same shape as the conductor layer 3 and may have a thickness of 0.05 to 0.5 ⁇ m.
  • the bonding material 5 for bonding the semiconductor element 6 to the conductor layer 3 may be applied as a brazing material to the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a.
  • the bonding material 5 may be formed as a plating layer by electrolytic plating only on the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a using a mask or the like.
  • the bonding material 5 may be etched so as to leave a portion of the mounting region 3a after forming a plating layer by electrolytic plating on the entire surface of the conductor layer 3 or the metal film 4.
  • the ceramic circuit board 1 described above constitutes a power module by mounting a power element as the semiconductor element 6.
  • the power module of this embodiment is filled in the ceramic circuit board 1, the power element mounted on the mounting region 3a, the ceramic circuit board 1 and the power element, and the casing. And a sealing resin for sealing the power element.
  • FIG. 1 is a cross-sectional view showing a configuration of a power module 100 as an example of the first embodiment.
  • the power module 100 of the present example is mounted with a housing 102 having an inner space S, lead terminals 103 led out from the inner space S through the housing 102, and a semiconductor element 6 as a power element.
  • the ceramic circuit board 1 and the sealing resin 107 filled in the inner space S are provided.
  • the housing 102 includes a frame body 104 and a heat radiating plate 105 that closes one opening of the frame body 104.
  • a space surrounded by the frame body 104 and the heat radiating plate 105 is an inner space S.
  • the lead terminal 103 passes through the frame body 104.
  • the power module 100 is used in, for example, an automobile, and is used in various control units such as an ECU (engine control unit), a power assist handle, and a motor drive.
  • the power element is a semiconductor element used for power control in such a control unit.
  • the ceramic circuit board 1 is formed, for example, by bonding a conductive layer 3 made of a Cu plate having a thickness of 0.3 mm to 0.8 mm to a ceramic substrate 2 with an active brazing material containing an active metal, and electrolessly bonding the surface of the conductive layer 3.
  • a Pd metal film having a thickness of 0.05 ⁇ m to 0.5 ⁇ m is formed by plating with Ni having a thickness of 0.5 ⁇ m to 8 ⁇ m as a base layer.
  • the frame body 104 is made of a resin material, a metal material, or a mixed material thereof, and one opening is closed by the heat radiating plate 105 to form an inner space S in which the ceramic circuit board 1 is accommodated.
  • the material used for the frame body 104 is a metal material such as copper or aluminum or a resin such as polybutyl terephthalate (PBT) or polyphenylene sulfite (PPS) in terms of heat dissipation, heat resistance, environmental resistance and lightness. Material can be used. Among these, PBT resin is easily available. Moreover, in order to increase mechanical strength, PBT resin can be made into fiber reinforced resin by adding glass fiber.
  • the lead terminal 103 is a conductive terminal attached so as to penetrate from the inner space S to the outside through the frame body 104.
  • the end of the lead terminal 103 on the inner space S side is electrically connected to the conductor layer 3 of the ceramic circuit board 1.
  • the external end of the lead terminal 103 is electrically connected to an external electronic circuit (not shown) or a power supply device (not shown).
  • an external electronic circuit not shown
  • a power supply device not shown
  • various metal materials used for the lead terminal 103 for example, Cu and Cu alloy, Al and Al alloy, Fe and Fe alloy, stainless steel (SUS) and the like can be used.
  • the heat radiating plate 105 is for radiating heat generated in the power element during operation to the outside of the power module 100.
  • the heat radiating plate 105 can be made of a highly heat conductive material such as Al, Cu, or Cu—W.
  • Al has higher thermal conductivity than a metal material as a general structural material such as Fe. Since Al can dissipate heat generated in the power element more efficiently to the outside of the power module 100, the power element can be stably operated normally.
  • Al is easily available and inexpensive compared with other high thermal conductivity materials such as Cu or Cu—W, it is advantageous for reducing the cost of the power module 100.
  • the heat sink 105 and the ceramic circuit board 1 may be firmly joined with a brazing material or the like, may be joined with grease or the like, and may be further joined with a sealing resin 107 as described later.
  • the sealing resin 107 fills the inner space S and seals and protects the power element mounted on the ceramic circuit board 1.
  • the bonding of the ceramic circuit board 1 and the heat sink 105 and the sealing of the inner space S may be performed with the same sealing resin 107. In this case, joining of the ceramic circuit board 1 and the heat sink 105 and resin sealing can be performed in the same process.
  • the sealing resin 107 may be a thermosetting resin such as a silicone resin, an epoxy resin, or a phenol resin from the viewpoint of thermal conductivity, insulation, environment resistance, and sealing properties.
  • the power module 100 cools cooling fins or the like via grease 106 or the like on the exposed surface of the heat dissipation plate 105 opposite to the side on which the ceramic circuit board 1 is bonded.
  • the vessel 108 may be joined.
  • the bonding strength of the sealing resin 107 can be improved, and the power module 100 having high reliability can be realized.
  • the ceramic circuit board 1 described above constitutes a light emitting device by mounting a light emitting element as the semiconductor element 6.
  • the light emitting device of the present embodiment includes the ceramic circuit board 1 described above, a light emitting element mounted on the mounting region 3a, and a sealing resin that seals the light emitting element.
  • FIG. 2 is a cross-sectional view illustrating a configuration of a light emitting device 200 that is an example of the present embodiment.
  • the light emitting device 200 of this example includes a ceramic circuit board 1, a semiconductor element 6 that is a light emitting element mounted on the ceramic circuit board 1, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209. .
  • the light emitting element is a semiconductor element that emits light, such as an LED (light emitting diode) or an LD (semiconductor laser).
  • the sealing resin 207 protects the light emitting element, the conductor layer 3 and the metal film 4. Even if the sealing resin 207 has a function of absorbing and radiating heat generated in the light emitting element and a wavelength converting function of emitting fluorescence excited by light emitted from the light emitting element by including a fluorescent substance or the like. Good.
  • the sealing resin 207 may have an optical lens function for converging or diverging light emitted by forming a curved surface as in the present embodiment.
  • the sealing resin 207 for example, a translucent resin that transmits light emitted from the light emitting element such as a silicone resin, an acrylic resin, or an epoxy resin can be used.
  • the ceramic substrate 2 of the ceramic circuit board 1 has a recess, the light emitting element is mounted on the mounting area 3a on the bottom surface of the recess, and the sealing resin 207 covers the light emitting element, the conductor layer 3, and the metal film 4 in the recess. It may be filled.
  • the ceramic circuit board 1 is formed by forming a conductive layer 3 made of Cu having a thickness of 0.1 m to 0.5 m by electrolytic plating by forming a base layer as a thin film on the ceramic substrate 2, for example.
  • a Pd metal film 4 having a thickness of 0.05 ⁇ m to 0.5 ⁇ m is formed on the surface of the substrate 3 by electrolytic plating and using Ni having a thickness of 0.5 ⁇ m to 8 ⁇ m as an underlayer.
  • the ceramic circuit board 1 includes an external connection wiring 209 for connection to an external electric circuit or the like.
  • the external connection wiring 209 for example, a through conductor that penetrates the ceramic substrate 2 in the thickness direction and is connected to the conductor layer 3, a connection pad that is connected to the through conductor, and the like can be appropriately combined.
  • the bonding strength of the sealing resin 207 can be improved, and the light emitting device 200 having high reliability can be realized.
  • the ceramic circuit board 1 ⁇ / b> A of the second embodiment includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 ⁇ / b> A that covers the conductor layer 3.
  • the ceramic circuit board 1A of the second embodiment is the same as the ceramic circuit board 1 of the first embodiment except that the configuration of the metal film 4A is different, the metal film 4A will be described below, and the other structures will be described. Detailed description will be omitted.
  • the metal film 4 of the first embodiment covers a portion other than the mounting region 3a among the exposed portions of the conductor layer 3.
  • the metal film 4A of the present embodiment also covers the mounting region 3a. That is, the metal film 4 ⁇ / b> A of the present embodiment covers the entire exposed portion of the conductor layer 3.
  • the semiconductor element 6 is mounted on the conductor layer 3 via a bonding material 5 containing Ag.
  • the bonding material 5 containing Ag has oxygen permeability, and an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, which is likely to cause breakdown in the oxide film. Become. Even in the mounting region 3 a where the bonding material 5 covers the conductor layer 3, the bonding strength may be reduced due to breakage in the film.
  • the metal coating 4A also covers the mounting region 3a, so that the bonding material 5 is not bonded to the conductor layer 3 but bonded to the metal coating 4A.
  • the oxidation of Cu in the mounting region 3a does not occur, and a copper oxide film that causes a decrease in bonding strength is not formed on the surface. Therefore, in the ceramic circuit board 1A of the present embodiment, in addition to improving the bonding strength between the ceramic circuit board 1 and the sealing resin, the bonding strength between the ceramic circuit board 1A and the semiconductor element 6 can also be improved.
  • FIG. 3 is a cross-sectional view illustrating a configuration of a power module 100A that is an example of the second embodiment.
  • the power module 100A includes the ceramic circuit board 1A, a power element (semiconductor element 6) mounted in the mounting area 3a, a casing 102 in which the ceramic circuit board 1A and the power element are stored, And a sealing resin 107 that seals the power element.
  • the power module 100A of this example is the same as the power module 100 as an example of the first embodiment except that the ceramic circuit board 1A is provided instead of the ceramic circuit board 1, detailed description thereof is omitted.
  • the bonding strength of the sealing resin 107 and the bonding strength of the semiconductor element 6 can be improved, and the power module 100A having high reliability can be realized.
  • the ceramic circuit board 1A described above constitutes a light emitting device by mounting a light emitting element.
  • FIG. 4 is a cross-sectional view illustrating a configuration of a light emitting device 200A that is an example of the present embodiment.
  • the light emitting device 200A includes a ceramic circuit board 1A, a light emitting element (semiconductor element 6) mounted on the ceramic circuit board 1A, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209.
  • the light-emitting device 200A of this example is the same as the light-emitting device 200 that is an example of the first embodiment except that the ceramic circuit substrate 1A is provided instead of the ceramic circuit substrate 1, and thus detailed description thereof is omitted.
  • the bonding strength of the sealing resin 207 and the bonding strength of the light emitting element can be improved, and the light emitting device 200A having high reliability can be realized.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un substrat de circuit céramique dans lequel la force de liaison avec une résine de scellage est améliorée, ainsi qu'un module de puissance et un dispositif d'émission de lumière au moyen desquels il est possible d'obtenir un degré élevé de fiabilité. Le substrat de circuit céramique 1 comprend un substrat en céramique 2, une couche conductrice 3 faite de Cu, et un revêtement métallique 4 recouvrant la couche conductrice 3. Le revêtement métallique 4 est fait d'un matériau ayant, comme constituant principal, un ou plusieurs éléments choisis dans le groupe constitué par Ir, Rh, Pd, Pt, Al, Ti, W, Ta et Nb.
PCT/JP2017/033853 2017-01-27 2017-09-20 Substrat de circuit céramique, module de puissance, et dispositif d'émission de lumière Ceased WO2018138961A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017013528 2017-01-27
JP2017-013528 2017-01-27

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WO2018138961A1 true WO2018138961A1 (fr) 2018-08-02

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WO (1) WO2018138961A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158142A (ja) * 2001-11-21 2003-05-30 Mitsui High Tec Inc 半導体装置の製造方法
JP2011228589A (ja) * 2010-04-22 2011-11-10 Panasonic Corp 光半導体装置用部品ならびにその製造方法
JP2013062506A (ja) * 2011-09-12 2013-04-04 Infineon Technologies Ag クラッド型ベースプレートを含む半導体装置
JP2013236005A (ja) * 2012-05-10 2013-11-21 Dainippon Printing Co Ltd Ｌｅｄ用リードフレーム及び当該ｌｅｄ用リードフレームを用いた半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028313B1 (ko) * 2009-12-03 2011-04-11 엘지이노텍 주식회사 발광 장치 및 그 제조 방법
DE102011079708B4 (de) * 2011-07-25 2022-08-11 Osram Gmbh Trägervorrichtung, elektrische vorrichtung mit einer trägervorrichtung und verfahren zur herstellung dieser
CN103515340B (zh) * 2012-06-29 2016-09-07 三星电机株式会社 电源模块封装和用于制造电源模块封装的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158142A (ja) * 2001-11-21 2003-05-30 Mitsui High Tec Inc 半導体装置の製造方法
JP2011228589A (ja) * 2010-04-22 2011-11-10 Panasonic Corp 光半導体装置用部品ならびにその製造方法
JP2013062506A (ja) * 2011-09-12 2013-04-04 Infineon Technologies Ag クラッド型ベースプレートを含む半導体装置
JP2013236005A (ja) * 2012-05-10 2013-11-21 Dainippon Printing Co Ltd Ｌｅｄ用リードフレーム及び当該ｌｅｄ用リードフレームを用いた半導体装置

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TWI651815B (zh) 2019-02-21

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