[go: up one dir, main page]

WO2018137926A1 - Procédé de fabrication d'éléments à effet peltier et caloporteur thermoélectrique - Google Patents

Procédé de fabrication d'éléments à effet peltier et caloporteur thermoélectrique Download PDF

Info

Publication number
WO2018137926A1
WO2018137926A1 PCT/EP2018/050522 EP2018050522W WO2018137926A1 WO 2018137926 A1 WO2018137926 A1 WO 2018137926A1 EP 2018050522 W EP2018050522 W EP 2018050522W WO 2018137926 A1 WO2018137926 A1 WO 2018137926A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
carrier
receptacles
sections
peltier elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/050522
Other languages
German (de)
English (en)
Inventor
Jürgen Grünwald
Michael Moser
Dirk Neumeister
Thomas PFADLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mahle International GmbH
Original Assignee
Mahle International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mahle International GmbH filed Critical Mahle International GmbH
Publication of WO2018137926A1 publication Critical patent/WO2018137926A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • thermoelectric heat exchanger Process for producing Peltier elements and a thermoelectric heat exchanger
  • the present invention relates to a method for producing
  • the invention further relates to a method for producing a thermoelectric
  • Peltier elements in heat exchangers are well known. In this case, by applying an electrical potential, heat is pumped from one side of the Peltier element to the opposite side, thus achieving temperature control. It is also possible with the help of Peltier elements to convert heat into electricity, also known as Seebeck effect.
  • Such Peltier elements usually have alternately arranged, interconnected P-type semiconductor and N-type semiconductor, wherein the P-type semiconductor are p-doped, whereas the N-type semiconductor are n-doped.
  • Peltier elements are usually produced by spacing the semiconductors with alternating doping.
  • the semiconductors are electrically contacted with each other by arranging individual electrical connection elements, so-called “conductor bridges", in order to achieve the mode of operation of the Peltier element when an electrical potential is applied.
  • the production of the Peltier elements thus requires a lot of effort and numerous manufacturing steps.
  • the connecting elements and the Peltier elements in particular with regard to their dimensions, their distance and their shape in each case to adapt, which also leads to a difficult production of the Peltier element.
  • Peltier elements may be provided in an associated heat exchanger.
  • a power density of the heat exchanger or a surface-specific temperature control of the heat exchanger depends in particular on the number and density of the semiconductor and the Peltier elements. If a given area-specific tempering performance is to be realized, the respective Peltier elements must, in particular with regard to their
  • Peltier elements of different dimensions to provide, in each case to achieve a predetermined tempering. This in turn requires that the Peltier elements are produced in separate manufacturing processes, which further complicates the production of the Peltier elements and the heat exchanger and in particular becomes less economical.
  • the present invention therefore addresses the problem of processes for producing a Peltier element and a thermoelectric
  • Peltier element and such a heat exchanger improved or at least to provide other embodiments, which are characterized in particular by a simplified and / or cost-effective production and / or increased variability.
  • Peltier element preferably several, so two or more, Peltier elements to produce by editing a common carrier, wherein the processing material removal method steps and the provision of the carrier with different materials and / or material compositions, in particular layers includes.
  • the thus processed carrier can
  • Peltier elements then optionally divided into several parts to produce from the same carrier by the same processing steps several Peltier elements.
  • the basic idea thus allows in particular a simplified production of at least one Peltier element.
  • Peltier elements
  • Peltier element and / or an associated heat exchanger is achieved.
  • said carrier is provided, which is electrically conductive.
  • the carrier is provided by an upper side and an upper side facing away from the upper side with receptacles which are in particular groove-shaped or each are a groove.
  • recordings are introduced into the carrier such that in the transverse direction adjacent receptacles are alternately introduced from the top and bottom in the carrier. That is, in the transverse direction adjacent shots alternately on the top and the bottom are open.
  • a longitudinally extending recess is introduced in the respective separating section. This is done such that in the transverse direction adjacent recesses alternately from the
  • Top and bottom are introduced and accordingly alternately open on the top and bottom of the carrier.
  • the introduction of the recesses is also such that the respective
  • the recess bounding connecting portion which is formed by the carrier and the electrically conductive material, are electrically and mechanically connected to each other.
  • the respective connection section connects such a P-type semiconductor section to such an N-type semiconductor section.
  • the Connecting sections preferably form the thermal sides of the Peltier element.
  • the connecting sections preferably form opposite sides of the respective Peltier element, which exchange heat during operation, hereinafter also referred to as first thermal side and second thermal side, also known as cold side and hot side.
  • the semiconductors of the respective Peltier element formed by the semiconductor sections are thus not arranged directly on the thermal sides of the Peltier element but between these sides.
  • Recordings are each equipped with the associated semiconductor section. Also included are variants in which the recesses of the respective side are introduced after the application of the electrically conductive material or before the application of the electrically conductive material. Variants are also included, in which the respective recess is introduced before the insertion of the respective receptacle, after the insertion of the respective receptacle or together with the respective receptacle.
  • the loading of the images with the semiconductor sections is preferably carried out by the application, in particular coating, of the respective semiconductor section on the associated side, ie top or bottom, or in the associated recording. It is conceivable, in particular, to populate the recordings of at least one of the sides of a corresponding semiconductor to raise this page.
  • a p-doped p-type semiconductor can be applied to the top side of the carrier, such that the receptacles of the topside are each equipped with such a p-type semiconductor portion of the p-type semiconductor.
  • the P-type semiconductor thus at least partially reaches the receptacles which are open on the upper side, so that they are appropriately populated.
  • an n-doped N-type semiconductor may be applied to the underside of the carrier, such that the receptacles of the underside are each equipped with such an N-type semiconductor portion of the N-type semiconductor. That is, the N-type semiconductor is at least partially applied in the receptacles open at the bottom.
  • the P-type semiconductor thus forms the P-semiconductor sections in the recordings of the upper side.
  • the electrically conductive carrier can in principle be of any desired design and / or made of any electrically conductive material.
  • the carrier may for example be made of aluminum or an aluminum alloy.
  • the carrier is preferably in one piece, that is, continuous and / or uniform material, formed.
  • the carrier may in particular be plate-shaped and have a transverse to the transverse direction and transverse to the longitudinal direction extending thickness, which allows the introduction of the receptacles and recesses in a simple manner, ie in particular without deformation of the carrier. It is conceivable to produce the carrier parallelepiped or to use a cuboid carrier. This offers the particular advantage that with a corresponding arrangement of the cuts, the resulting
  • Peltier elements are the same size. Also possible is a circular carrier. One such carrier offers advantages in particular when applying the respective semiconductor or semiconductor section, in particular because less
  • the carrier is preferably formed as a flat plate.
  • the carrier provides sufficient stability and thickness during manufacture to simplify the process. It is also conceivable, an elastic
  • deformable support for example in the form of a sheet metal part, provide.
  • the alternately open arrangement of the receptacles means, in particular, that a receptacle open on the top in both orientations of the
  • the carrier can be used in an optimized way.
  • a plurality of such Peltier elements can thus be produced in a simplified manner from the same carrier.
  • At least one section running obliquely to the longitudinal direction, ie having an inclination to the longitudinal direction or extending transversely thereto, is introduced into the carrier, and the carrier equipped with the semiconductor sections is thus divided into at least two parts.
  • the respective part forms such a Peltier element. So there is at least one division, so that at least two separate parts arise, wherein the respective part of such a Peltier element.
  • at least two Peltier elements are produced inexpensively and easily.
  • Positioning of the at least one section can in particular a
  • Packaging of the Peltier elements can be realized in a simple manner with great variability.
  • the at least one cut extends in the transverse direction or is introduced running in the transverse direction.
  • these variants enable a simplified division of the carrier and an increased efficiency in the production of the Peltier elements.
  • Peltier elements are produced with different dimensions or widths in the longitudinal direction.
  • the respective semiconductor can be applied on the associated side by a corresponding technique in such a way that the semiconductor is present exclusively in the corresponding receptacles and forms the semiconductor sections.
  • Conceivable are techniques with which the semiconductor is introduced only locally in the field of recordings or in the recordings. Suitable, for example, suitably designed, in particular dimensioned, nozzles and the like for applying the semiconductor.
  • At least one of the sides is provided with a temporary layer detachable from the carrier prior to the mounting of the associated receptacles with the semiconductor sections, in particular before the application of the associated semiconductor Application of the associated semiconductor is removed.
  • Temporar Anlagen serves primarily for the purpose of preventing semiconductor arrives outside of the recordings on the associated side of the carrier. Removal of the temporary layer also removes semiconductors present on the temporary layer so that subsequently the semiconductor sections remain. This allows a simplified loading of the images with the semiconductor sections, in particular the large-area, that is not local, application of the semiconductor. Thus, the production of the at least one Peltier element is simplified.
  • the respective temporary layer is preferably applied in a closed manner prior to the introduction of the receptacles of the associated side.
  • the temporary layer is removed by introducing the recordings in the area of the recordings.
  • the temporary layer thus forms a mask with free sections that correspond to the receptacles, in particular aligned so that during subsequent loading with the semiconductor sections, in particular before the application of the associated semiconductor, the semiconductor exclusively in the recordings and the rest on the temporary layer passes and thus the semiconductor sections are formed.
  • Advantageous embodiments are those in which such a temporary layer is used, which can be easily detached from the carrier and / or does not allow diffusion of the respective semiconductor or is impermeable to the semiconductor. It is conceivable, in particular, to use a lacquer layer and / or a polymer layer, in particular a polymer-containing lacquer layer, as the temporary layer. An easy release is especially given when the Peel temporary layer by mechanical action from the carrier and / or can be solved by the use of a solvent from the carrier, without the
  • the respective temporary layer can be applied to the associated side in any desired manner. It is conceivable to glue the temporary layer to the carrier. Embodiments are also possible in which the temporary layer is coated on the carrier.
  • the associated receptacles do not each extend in a direction transverse to the transverse direction and transverse to the longitudinal direction completely and in Querhchtung and / or in the longitudinal direction are completely filled with the semiconductor portion.
  • a sufficient mechanical and electrical connection of the semiconductor sections is achieved with the carrier and sufficient space for covering with the electrically conductive material, hereinafter also called filler left over, so that the filler sufficiently adheres to the carrier and thus electrically and mechanically with connected to the carrier.
  • Covering the stocked with the semiconductor sections recordings with the electrically conductive material or filler is advantageously carried out such that the material is introduced only in the recordings and the recordings are filled. It is conceivable to coat the semiconductor sections with the filler for this purpose. This may advantageously be the material from which the carrier is made. This leads to a mechanically and / or electrically stable connection between the carrier and the material.
  • the covering of the semiconductor sections with the electrically conductive material or filling material can take place by applying the filling material on the entire associated side of the carrier, wherein the filling material is subsequently removed from the separating sections.
  • the electrically conductive material or filling material over a large area on at least one of the sides, such that the filling material also reaches the carrier outside the receptacles.
  • the associated thermal side of the later at least one Peltier element is at least partially formed by the filling material in the region of the receptacles and outside the receptacles.
  • the filler material does not necessarily have a flat surface on the side facing away from the associated semiconductor section or the associated semiconductor sections. This means that the filler material is also a bumpy one
  • the recordings are preferably introduced into the carrier in such a way that they have such a depth extending transversely to the longitudinal direction and transversely to the transverse direction that the laterally adjacent semiconductor sections are arranged in overlapping depth regions or in a same depth or in a flat parallelepiped lie in a predetermined depth.
  • This also means that the depths are such that at a given depth in Transverse alternately images of the top and bottom are arranged. It is conceivable that the recordings each have the same depth or are introduced with the same depth.
  • the height of the respective semiconductor or semiconductor section running transversely to the longitudinal direction and transversely to the transverse direction can in principle be arbitrary.
  • the respective semiconductor section may have a height of between 100 ⁇ m and 300 ⁇ m.
  • the respective recording can be arbitrarily dimensioned.
  • a width extending in the transverse direction of the respective receptacle can amount to between 300 ⁇ and 1000 ⁇ .
  • Embodiments in which at least one of the semiconductors is applied to the entire associated side are preferred, the semiconductor applied outside the receptacles being removed, in particular by the removal of the temporary layer.
  • measures for local application or coating of the semiconductor can be omitted and thus the production of the Peltier elements can be simplified.
  • a vacuum-based coating method is used for applying or coating at least one of the semiconductor sections, in particular one of the semiconductors.
  • Sputtering or cathode sputtering is particularly preferably used.
  • the smallest constituents in particular atoms or groups of atoms, are released from a target by bombardment with ions and then settle on the support and thus coat the support, in particular the receptacles.
  • the ions for dissolving the smallest constituents from the target are thereby accelerated by the use of an electrical potential, wherein the energy of the ions reproduces a so-called sputtering energy.
  • Sputtering simplifies a, in particular uniform,
  • At least one such P-semiconductor section and at least one such N-semiconductor section, in particular both semiconductors, are sputtered
  • the carrier can be turned and / or the sputtering arrangement moved and the target can be changed. It is also conceivable to provide two sputter arrangements in one device, wherein the top side is coated with one arrangement and the bottom side with the other arrangement. Variants prove to be advantageous in which at least one sputtering condition for producing at least one of the semiconductor sections is varied during sputtering.
  • the variation of the sputtering condition leads to a structure of the semiconductor section which changes along the thickness of the semiconductor section thus produced, in particular crystalline.
  • a so-called superlattice also called a superlattice, can be produced, which has an increased mechanical and / or thermomechanical effects stability and thus to increased stability of the manufactured Peltier elements and / or increased life thereof and / or, in particular By reducing the unwanted thermal conduction of the phonons, it leads to improved thermoelectric efficiency.
  • any desired sputtering conditions can be varied.
  • the sputtering energy can in principle be of any type, wherein preferably periodic changes in the sputtering condition are used.
  • the electrically conductive material or the filling material can in principle be applied by any method, wherein the filling material is preferably coated in order to simplify the production.
  • Sputtering can also be used to apply the filling material. That is, the electrically conductive material for covering at least one of the semiconductors is applied by sputtering. In this way, in particular, an advantageous adhesion of the filling material to the carrier and / or the associated semiconductor can be achieved. It is conceivable to use the same sputtering arrangement for sputtering the filling material as for sputtering at least one of the semiconductors. Required is only an exchange or change of the corresponding target.
  • Transverse direction and / or in height direction have a different size than the N-semiconductor sections.
  • the different dimensioning of the P-semiconductor sections compared to the N-semiconductor sections leads to
  • thermodynamically and / or thermomechanically advantageous effects which in particular an increased thermo-mechanical stability of the respective
  • Peltier element result. Due to the different dimensions of the respective Peltier element thus thermally induced mechanical
  • the different dimensioning of the P-semiconductor sections compared to the N-semiconductor sections can be realized in principle in any way. It is conceivable, in particular, that the receptacles of the upper side are introduced into the carrier with another transverse width in the transverse direction than the receptacles of the underside. As a result, the P-type semiconductor portions have a different width than the N-type semiconductor portions.
  • the P-type semiconductor with another height extending in the height direction than the N-type semiconductor.
  • the P-type semiconductor portions have a different height than the N-type semiconductor portions.
  • the recordings and the recesses can each be introduced into the carrier in any desired manner. For this purpose, each material is removed.
  • Embodiments prove to be advantageous in which the receptacles and / or recesses are introduced with at least one saw blade. In this way, in particular along the longitudinal direction, large or long and along the transverse direction small or narrow recordings or
  • the respective dielectric and thermally conductive layer can in principle be of any desired design.
  • it can be a plate, a film, a film or a coating.
  • the respective thermally conductive layer can be applied, for example, by a coating method. It is equally conceivable that equipped with the semiconductor sections and with the filling material, in particular with the
  • Recesses, dip provided carrier in a corresponding bath to apply such, dielectric and thermally conductive layer.
  • the thermally insulating material has a lower thermal conductivity than the layer.
  • the thermally insulating material has a thermal conductivity of less than 0.1 W / (m * K), in particular less than 0.05 W / (m * K).
  • Peltier element produced in this way also belongs to the scope of this invention.
  • the Peltier elements produced according to the invention are used for producing a thermoelectric heat exchanger.
  • a desired surface-specific temperature control of the heat exchanger is determined or specified.
  • the Peltier elements are produced according to the invention, wherein the distance of the cuts in the longitudinal direction and thus a longitudinal width of the respective Peltier element and subsequent distances of the Peltier elements in the heat exchanger to each other are adapted to each other such that this results in the desired area-specific tempering.
  • Peltier elements can with
  • Heat exchanger and a heat exchanger produced in this way belongs to the scope of this invention.
  • FIG. 2 shows the section from FIG. 1 after a subsequent method step
  • 3 is a plan view of the state shown in Fig. 2
  • FIG. 4 shows the view from FIG. 2 in a subsequent method step
  • FIG. 6 is a plan view of the state shown in FIG. 5; FIG.
  • Fig. 7 shows the view of Fig. 5 after performing another
  • FIG. 8 is a plan view of the state shown in FIG. 7;
  • thermoelectric heat exchanger 18 shows a section through a thermoelectric heat exchanger.
  • the carrier 2 is plate-shaped and has along a transverse direction 3 and a transversely to the transverse direction 3 extending longitudinal direction 4 expansions, which are substantially larger, in particular at least three times greater than the extension of the carrier 2 in a direction transverse to the transverse direction 3 and transverse to the longitudinal direction 4 extending height direction 5.
  • the carrier 2 has in the height direction 5 an upper side 6 and a side facing away from the top 6 bottom 7. The top 6 and the bottom 7 are closed and flat in the state shown.
  • FIGS. 5 and 6 The result of the method step shown in FIG. 4 is shown in FIGS. 5 and 6.
  • receptacles 12 are introduced into the carrier 2.
  • the receptacles 12 are alternately introduced along the transverse direction 3 of the top 6 and the bottom 7 in the carrier 2. That means that in
  • Transverse 3 adjacent shots 12 alternately on the top 6 and the bottom 7 are open.
  • the receptacles 12 each extend in the longitudinal direction 4 and are separated from one another in the transverse direction 3 by a respective separating section 13.
  • the images 12 by a
  • the separating sections 13 have a same width 15 extending in the transverse direction 3, referred to below as the separating section width 15.
  • various recording widths 14 and / or separating section widths 15 are possible.
  • Longitudinal 4 extending extension of the support 2 extend. This preferably also applies to the receptacles 12 of the underside 7.
  • Temporary layer 8 a mask 40, which has 12 corresponding free portions 41 with the receptacles.
  • a depth 16 extending in the vertical direction 5 of the respective receptacle 12 in the carrier 2, referred to below as the receiving depth 16, is smaller than a thickness 17 of the carrier 2 extending in the height direction 5.
  • all the receptacles 12 have the same recording depth 16 on.
  • the receiving depth 16 of the receptacles 12 is selected such that alternately on the top 6 in a running in the vertical direction 5, predetermined depth range 18 open 12 shots, hereinafter also shots 12 of the top 6 called, and on the bottom 7 open shots 12th .
  • receptacles 12 of the bottom 7 are arranged.
  • a p-doped P-type semiconductor 19 is applied to the upper side 6 and an n-type N-type semiconductor 20 is applied to the underside 7.
  • the entire surface provided is provided with the respective semiconductor 19, 20.
  • a diffusion barrier (not shown) and / or an adhesion promoter (not shown), for example nickel, titanium, tungsten or WTi can be applied.
  • a sputtering energy is preferably varied, so that the semiconductor 19, 20 or the respective Semiconductor section 21, 22 has a superstructure, also called super lattice has.
  • the respective semiconductor section 21, 22 has a height 38 extending in the height direction 5, wherein the heights 38 of the P-semiconductor sections 21 are different, in particular larger, than the heights 38 of the N-semiconductor sections 22.
  • the 12 equipped with the semiconductors 19, 20 and semiconductor sections 21, 22 receptacles 12 are provided with an electrically conductive material 23, such that the semiconductor 19, 20 and Semiconductor sections 21, 22 with the electrically conductive material 23,
  • the semiconductors 19, 20 and semiconductor sections 21, 22 can be seen neither from the top 6 nor the bottom 7. Accordingly, the semiconductor portions 21, 22 are shown hatched in Fig. 12 to indicate their position. The receptacles 12 are thereby completely filled with the filling material 23, which are shown in dashed lines in Fig. 1 1 for this reason.
  • the electrically conductive material 23 is preferably by a
  • Coating process particularly preferably by sputtering, brought to the semiconductor sections 21, 22 and in the receptacles 12.
  • the receptacles 12 of the top 6 are, as indicated in Fig. 1 1, filled with the electrically conductive material 23 so that the electrically conductive material 23 forms with the top 6 of the carrier 2 outside of the receptacles 12 a closed flat surface.
  • the electrically conductive material 23 is preferably the same material from which the carrier 12 is made, so in particular aluminum or an aluminum alloy.
  • adjacent semiconductor sections 21, 22 each have a cavity 25 is formed which separates the transverse in the transverse direction 3 adjacent semiconductor sections 21, 22 in the transverse direction 3.
  • the adjacent in the transverse direction 3 semiconductor portions 21, 22, in particular exclusively, mechanically and electrically connected to each other by a connecting portion 26 which limits the associated recess 24 and the associated cavity 25 and the material of the carrier 24 and the electric conductive material 23 or
  • a Peltier element 1 which has a first thermal side 29 along the upper side 6 and a second thermal side 30 along the lower side 7.
  • the first thermal side 29 is thereby introduced by the remaining after insertion of the recesses 24 upper side 6 of the support 2 and in the receptacles 12 of the top 6
  • the second thermal side 30 is formed by the remaining after insertion of the recesses 24 underside 7 of the carrier 2 and introduced into the recesses 12 of the bottom 7 filler 23.
  • the respective connecting section 26 has a cross-section, seen in FIG. 14, with a base side 41 and two projecting legs 42. In this case, along the transverse direction 3 connecting sections 26 with
  • the bases 41 form the first thermal side 29 and the second thermal side 30 of the Peltier element 1, respectively.
  • One of the legs 42 of the respective connection portion 26 is end-to-end mechanically and electrically connected to one of the P-type semiconductor portions 21 and the other leg 42 end to the adjacent in the transverse direction 3 N-type semiconductor portion 22.
  • Fig. 16 shows the view of Fig. 15. An optional one is indicated
  • the carrier 2 equipped with the semiconductor sections 21, 22 can be provided on the outside, for example by immersion in a corresponding bath, not shown, with a dielectric, and thus electrically insulating, and thermally conductive layer 39.
  • the layer 39 is preferably applied outside the recesses 24, so that it is not present within the recesses 24. This can be realized by filling the recesses 24 with an electrically and thermally insulating material, not shown, before providing it with the layer 39.
  • the inventive method thus makes it possible to simple and
  • the dimensioning of the Peltier elements 1 can vary by the design or dimensioning of the carrier 2. In the example shown, not all Peltier elements 1 have a same length extending in the transverse direction 3 because of the circular or round design of the carrier 2. A constant length 34 of all Peltier elements 2 can be realized for example by a cuboidal design of the carrier 2.
  • FIG. 18 shows in a highly simplified manner a thermoelectric heat exchanger 31.
  • the heat exchanger 31 has for tempering a fluid, a
  • the heat exchanger 31 can be used for controlling the temperature of a rechargeable battery, not shown, which is contacted in a heat transferring manner with the heat exchanger 31.
  • Heat exchanger 1 in particular a surface-specific temperature control of the heat exchanger 31, in particular by the proportion of
  • Peltier element 1 is predetermined by the distance 43 of the cuts 27, which are introduced into the carrier 2 (see FIG. Accordingly, the desired area-specific tempering performance can already be influenced and determined during the production of the Peltier elements 1 by the respective spacing 43 between sections 27 adjacent in the longitudinal direction 4.
  • the spacings 32 of the Peltier elements 1 and the spacing 29 of the cuts 27 and thus the width 33 of the respective Peltier element 1 are already matched to one another in the production of the Peltier elements 1 in such a way that the desired tempering performance results.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'éléments à effet Peltier (1) dans lequel un support électriquement conducteur (2) est alternativement pourvu de logements (12) sur des côtés opposés (6, 7) et les logements (12) sont alternativement équipés d'une partie semi-conductrice de type p (21) et d'une partie semi-conductrice de type n (22). Les semi-conducteurs (19, 20) sont ensuite recouverts d'un matériau électriquement conducteur (23) et des évidements (24) sont ménagés alternativement dans le support (2) depuis les côtés opposés (6, 7). En conséquence, les éléments à effet Peltier (1) peuvent être simplifiés et fabriqués de manière peu coûteuse et variable. À partir de cet élément à effet Peltier (1), on peut fabriquer au moins deux éléments à effet Peltier (1) en le divisant en au moins deux parties (28). L'invention concerne en outre un procédé de fabrication d'un caloporteur thermoélectrique (31) pourvus de tels éléments à effet Peltier (1). La distance (32) entre es éléments à effet Peltier (1) est adaptée à la séparation de l'élément à effet Peltier (1) en les parties (28) de sorte que les éléments à effet Peltier (1) formés à partir des parties (28) permettent d'obtenir un équilibrage de température souhaitée spécifique à la surface. L'invention concerne en outre un tel élément à effet Peltier (1) et un tel caloporteur (31).
PCT/EP2018/050522 2017-01-27 2018-01-10 Procédé de fabrication d'éléments à effet peltier et caloporteur thermoélectrique Ceased WO2018137926A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017201294.3 2017-01-27
DE102017201294.3A DE102017201294A1 (de) 2017-01-27 2017-01-27 Verfahren zum Herstellen von Peltierelementen sowie eines thermoelektrischen Wärmeübertragers

Publications (1)

Publication Number Publication Date
WO2018137926A1 true WO2018137926A1 (fr) 2018-08-02

Family

ID=60943032

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/050522 Ceased WO2018137926A1 (fr) 2017-01-27 2018-01-10 Procédé de fabrication d'éléments à effet peltier et caloporteur thermoélectrique

Country Status (2)

Country Link
DE (1) DE102017201294A1 (fr)
WO (1) WO2018137926A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099137A (en) * 1961-04-18 1963-07-30 Carrier Corp Thermoelectric cooling devices and method of making the same
JPH0864875A (ja) * 1994-08-25 1996-03-08 Sharp Corp 熱電変換装置の製造方法
US5950067A (en) * 1996-05-27 1999-09-07 Matsushita Electric Works, Ltd. Method of fabricating a thermoelectric module
JP2001230458A (ja) * 2000-02-16 2001-08-24 Ube Ind Ltd 熱電変換モジュール及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298908A (fr) * 1963-10-07
JP3982080B2 (ja) * 1997-12-05 2007-09-26 松下電工株式会社 熱電モジュールの製造法と熱電モジュール
DE102010024414A1 (de) * 2010-06-19 2011-12-22 Volkswagen Ag Elektrothermisches Wandeln
DE102013219541B4 (de) * 2013-09-27 2019-05-09 Evonik Degussa Gmbh Verbessertes Verfahren zur pulvermetallurgischen Herstellung thermoelektrischer Bauelemente

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099137A (en) * 1961-04-18 1963-07-30 Carrier Corp Thermoelectric cooling devices and method of making the same
JPH0864875A (ja) * 1994-08-25 1996-03-08 Sharp Corp 熱電変換装置の製造方法
US5950067A (en) * 1996-05-27 1999-09-07 Matsushita Electric Works, Ltd. Method of fabricating a thermoelectric module
JP2001230458A (ja) * 2000-02-16 2001-08-24 Ube Ind Ltd 熱電変換モジュール及びその製造方法

Also Published As

Publication number Publication date
DE102017201294A1 (de) 2018-08-02

Similar Documents

Publication Publication Date Title
DE2459532C2 (de) Anordnung mit mehreren, parallel angeordneten mikroelektronischen Bauelementen scheibenförmiger Gestalt und Verfahren zur Herstellung der Kontaktbereiche einer solchen Anordnung
DE2625383C2 (de) Verbindungsträger zur Bildung der elektrischen Verbindungen zwischen Anschlußleitern eines Packungsrahmens und Kontaktierungsstellen mindestens einer innerhalb des Packungsrahmens gelegenen integrierten Schaltung und Verfahren zur Herstellung eines solchen Verbindungsträgers
DE2430692C2 (de) Verfahren zum Herstellen von Verbindungslöchern in Isolierschichten
DE102009026027A1 (de) Wafersolarzelle
DE102010029282A1 (de) Verfahren und Vorrichtung zur Herstellung einer Dünnschichtbatterie
DE19738149A1 (de) Feste Elektrolytkondensatoranordnung und Verfahren zur Herstellung derselbigen
DE10045419A1 (de) Thermoelektrisches Bauelement und Verfahren zu seiner Herstellung sowie Verfahren und Vorrichtung zum Trennen und Transferieren von Lagenmaterialien
EP1680949B1 (fr) Procédé de fabrication d'une barrière d'arrêt de brasure
EP3414369A1 (fr) Procédé et dispositif de fabrication d'un film semi-conducteur
DE2454605C2 (de) Halbleiterbauelement
DE102006017547B4 (de) Thermoelektrisches Bauelement sowie Herstellverfahren hierfür
DE102020118446A1 (de) Verbindungselement
EP2234146A2 (fr) Procédé de fabrication d'une multitude de composants semi-conducteurs intégrés
DE2342923C2 (de) Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung
WO2018137926A1 (fr) Procédé de fabrication d'éléments à effet peltier et caloporteur thermoélectrique
DE102005038219A1 (de) Integrierte Schaltungsanordnung mit Kondensator in einer Leitbahnlage und Verfahren
EP2301075A2 (fr) Procédé de réalisation d'un dispositif thermoélectrique
DE2259133A1 (de) Verfahren zum kontaktieren einer halbleiteranordnung
DE2039027C3 (de) Halbleiteranordnung mit einem Träger aus Isoliermaterial, einem Halbleiterbauelement und einem Anschlußfleck
WO2018162438A2 (fr) Procédé de fabrication de modules thermoélectriques
DE2723620A1 (de) Photozellenanordnung und verfahren zu ihrer herstellung
EP4193451A1 (fr) Procédé de fabrication additive d'un composant tridimensionnel comprenant au moins un conducteur électrique
DE19710375C2 (de) Verfahren zum Herstellen von räumlich strukturierten Bauteilen
DE2340423A1 (de) Weichgeloetete kontaktanordnung
DE102004019568A1 (de) Substrat für ein Leistungshalbleitermodul

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18700152

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18700152

Country of ref document: EP

Kind code of ref document: A1