WO2018137926A1 - Method for producing peltier elements and a thermoelectric heat exchanger - Google Patents

Abstract

The invention relates to a method for producing peltier elements (1). An electrically conductive support (2) is provided with receiving areas (12) on opposite sides (6, 7) in an alternating manner, and the receiving areas (12) are populated with a P-type semiconductor section (21) and an N-type semiconductor section (22) in an alternating manner. The semiconductors (19, 20) are then covered with an electrically conductive material (23), and recesses (24) are introduced into the support (2) from the opposite sides (6, 7) in an alternating manner. In this manner, peltier elements (1) can be produced in a simplified, inexpensive, and variable manner. At least two peltier elements (1) can be produced from said peltier element (1) by dividing the element into at least two parts (28). The invention additionally relates to a method for producing a thermoelectric heat exchanger (31) comprising such peltier elements (1), wherein the spacing (32) of the peltier elements (1) is adapted to the division of the peltier element (1) into the parts (28) such that a desired surface-specific temperature control power is produced by means of the peltier elements (1) formed from the parts (28). The invention further relates to such a peltier element (1) and such a heat exchanger (31).

Description

 Process for producing Peltier elements and a thermoelectric heat exchanger

The present invention relates to a method for producing

Peltier elements and such a Peltier element. The invention further relates to a method for producing a thermoelectric

Heat exchanger with several such Peltier elements and such a heat exchanger.

The use of Peltier elements in heat exchangers is well known. In this case, by applying an electrical potential, heat is pumped from one side of the Peltier element to the opposite side, thus achieving temperature control. It is also possible with the help of Peltier elements to convert heat into electricity, also known as Seebeck effect. Such Peltier elements usually have alternately arranged, interconnected P-type semiconductor and N-type semiconductor, wherein the P-type semiconductor are p-doped, whereas the N-type semiconductor are n-doped.

Such Peltier elements are usually produced by spacing the semiconductors with alternating doping.

Subsequently, the semiconductors are electrically contacted with each other by arranging individual electrical connection elements, so-called "conductor bridges", in order to achieve the mode of operation of the Peltier element when an electrical potential is applied. The production of the Peltier elements thus requires a lot of effort and numerous manufacturing steps. In addition, the connecting elements and the Peltier elements in particular with regard to their dimensions, their distance and their shape in each case to adapt, which also leads to a difficult production of the Peltier element.

In an associated heat exchanger, several such Peltier elements may be provided. A power density of the heat exchanger or a surface-specific temperature control of the heat exchanger depends in particular on the number and density of the semiconductor and the Peltier elements. If a given area-specific tempering performance is to be realized, the respective Peltier elements must, in particular with regard to their

Dimensioning and arrangement to be adjusted accordingly. It may be necessary to use different Peltier elements, in particular

Peltier elements of different dimensions, to provide, in each case to achieve a predetermined tempering. This in turn requires that the Peltier elements are produced in separate manufacturing processes, which further complicates the production of the Peltier elements and the heat exchanger and in particular becomes less economical.

The present invention therefore addresses the problem of processes for producing a Peltier element and a thermoelectric

Heat exchanger with such Peltier elements and for such

Peltier element and such a heat exchanger improved or at least to provide other embodiments, which are characterized in particular by a simplified and / or cost-effective production and / or increased variability.

This object is achieved by the subjects of the independent claims. Advantageous embodiments are the subject of the dependent claims. The present invention is based on the general idea

Peltier element, preferably several, so two or more, Peltier elements to produce by editing a common carrier, wherein the processing material removal method steps and the provision of the carrier with different materials and / or material compositions, in particular layers includes. The thus processed carrier can

then optionally divided into several parts to produce from the same carrier by the same processing steps several Peltier elements. The basic idea thus allows in particular a simplified production of at least one Peltier element. In addition, Peltier elements

simplified dimensioning made of the same carrier, so that the production of such differently dimensioned Peltier elements can be simplified and cost-effective. Thus, an increased variability of the Peltier elements can be achieved. By virtue of the inventive concept, a relative

Positioning of the components of the respective Peltier element before

Connecting the components omitted together, so that thereby caused errors at least reduced and increased efficiency of the respective

Peltier element and / or an associated heat exchanger is achieved.

According to the idea of the invention, in the method for producing the Peltier elements, first of all, said carrier is provided, which is electrically conductive. Next, the carrier is provided by an upper side and an upper side facing away from the upper side with receptacles which are in particular groove-shaped or each are a groove. In this case, in a longitudinal direction and in a direction transverse to the longitudinal direction transverse direction separated by separation sections recordings are introduced into the carrier such that in the transverse direction adjacent receptacles are alternately introduced from the top and bottom in the carrier. That is, in the transverse direction adjacent shots alternately on the top and the bottom are open. Thereafter, the receptacles open on the upper side and thus the receptacles introduced from the upper side into the carrier, hereinafter referred to as receptacles of the upper side, are each equipped with a p-doped P-semiconductor section. In addition, the receptacles which are open on the underside and thus introduced from the underside into the carrier, also referred to below as receptacles of the underside, are each equipped with an n-doped N-semiconductor section. After loading the receptacles, the respective semiconductor section is covered with an electrically conductive material, wherein the electrically conductive material is applied to the side of the respective semiconductor section facing the opening of the associated receptacle,

in particular, is deposited. In particular, the respective receptacle can be filled with the electrically conductive material. In a further, not necessarily subsequent, method step, a longitudinally extending recess is introduced in the respective separating section. This is done such that in the transverse direction adjacent recesses alternately from the

Top and bottom are introduced and accordingly alternately open on the top and bottom of the carrier. The introduction of the recesses is also such that the respective

Recess forms a transverse to the adjacent semiconductor sections separating cavity so that it adjacent in the transverse direction

Semiconductor sections via a thus remaining, the recess bounding connecting portion, which is formed by the carrier and the electrically conductive material, are electrically and mechanically connected to each other. The respective connection section connects such a P-type semiconductor section to such an N-type semiconductor section. This results in a Peltier element having a first thermal side and an opposite second thermal side, between which the semiconductor sections are arranged with transversely alternating doping. The Connecting sections preferably form the thermal sides of the Peltier element.

The connecting sections preferably form opposite sides of the respective Peltier element, which exchange heat during operation, hereinafter also referred to as first thermal side and second thermal side, also known as cold side and hot side. The semiconductors of the respective Peltier element formed by the semiconductor sections are thus not arranged directly on the thermal sides of the Peltier element but between these sides.

It is understood that the present invention includes both variants in which initially the recordings are introduced and then populated, as well as variants in which initially recorded one of the pages introduced, these recordings each equipped with the associated semiconductor section and then the recordings the other side introduced and this

Recordings are each equipped with the associated semiconductor section. Also included are variants in which the recesses of the respective side are introduced after the application of the electrically conductive material or before the application of the electrically conductive material. Variants are also included, in which the respective recess is introduced before the insertion of the respective receptacle, after the insertion of the respective receptacle or together with the respective receptacle.

The loading of the images with the semiconductor sections is preferably carried out by the application, in particular coating, of the respective semiconductor section on the associated side, ie top or bottom, or in the associated recording. It is conceivable, in particular, to populate the recordings of at least one of the sides of a corresponding semiconductor to raise this page. This means that a p-doped p-type semiconductor can be applied to the top side of the carrier, such that the receptacles of the topside are each equipped with such a p-type semiconductor portion of the p-type semiconductor. When applying the P-type semiconductor, the P-type semiconductor thus at least partially reaches the receptacles which are open on the upper side, so that they are appropriately populated. Alternatively or additionally, an n-doped N-type semiconductor may be applied to the underside of the carrier, such that the receptacles of the underside are each equipped with such an N-type semiconductor portion of the N-type semiconductor. That is, the N-type semiconductor is at least partially applied in the receptacles open at the bottom. The P-type semiconductor thus forms the P-semiconductor sections in the recordings of the upper side.

Accordingly, the N-type semiconductor forms the N-type semiconductor portions in the receptacles of the lower surface. Accordingly, the P-type semiconductor portions as well as the P-type semiconductor in the photographs below are to be understood as equivalent. The same applies to the N-type semiconductor in the recordings and the N-type semiconductor sections.

It is conceivable that at least two of the P-semiconductor sections

have different compositions or applied with different compositions. In particular, at least two of the P-semiconductor sections with different material compositions and / or different structures, for example, submolecular

It is also conceivable to apply at least two of the P-semiconductor sections with differently high p-type dopants. The same applies to the N-semiconductor sections, of which at least two with different compositions, in particular

Material compositions and / or structures, for example

submolecular structures, and / or n-type dopants can be applied. The electrically conductive carrier can in principle be of any desired design and / or made of any electrically conductive material. The carrier may for example be made of aluminum or an aluminum alloy. The carrier is preferably in one piece, that is, continuous and / or uniform material, formed. The carrier may in particular be plate-shaped and have a transverse to the transverse direction and transverse to the longitudinal direction extending thickness, which allows the introduction of the receptacles and recesses in a simple manner, ie in particular without deformation of the carrier. It is conceivable to produce the carrier parallelepiped or to use a cuboid carrier. This offers the particular advantage that with a corresponding arrangement of the cuts, the resulting

Peltier elements are the same size. Also possible is a circular carrier. One such carrier offers advantages in particular when applying the respective semiconductor or semiconductor section, in particular because less

Semiconductor material missed the carrier.

 The carrier is preferably formed as a flat plate. Thus, the carrier provides sufficient stability and thickness during manufacture to simplify the process. It is also conceivable, an elastic

deformable support, for example in the form of a sheet metal part, provide.

The alternately open arrangement of the receptacles means, in particular, that a receptacle open on the top in both orientations of the

Transversely adjacent to the adjacent openings, which are open on the bottom and vice versa. The same applies to the recesses. That is, a recess open on the top in both orientations of the transverse direction

Recesses is adjacent, which are open on the bottom and vice versa. Of course, this does not apply to the transversely outermost receptacles or recesses. The longitudinally extending receptacles can in principle be inclined relative to each other. This means that not all recordings inevitably run parallel to each other or to the longitudinal direction. The same applies to the

Recesses that do not necessarily have to run parallel to each other and / or to the longitudinal direction.

Embodiments in which the recordings are parallel are preferred

extending to each other, in particular parallel to the longitudinal direction, introduced. It is also preferred if the recesses run parallel to one another, in particular running parallel to the longitudinal direction. Thus, the carrier can be used in an optimized way. In particular, a plurality of such Peltier elements can thus be produced in a simplified manner from the same carrier.

Preferably, after the introduction of the recesses, at least one section running obliquely to the longitudinal direction, ie having an inclination to the longitudinal direction or extending transversely thereto, is introduced into the carrier, and the carrier equipped with the semiconductor sections is thus divided into at least two parts. The respective part forms such a Peltier element. So there is at least one division, so that at least two separate parts arise, wherein the respective part of such a Peltier element. Thus, therefore, at least two Peltier elements are produced inexpensively and easily. By the

Positioning of the at least one section can in particular a

Dimensioning of the respective Peltier element determined and thus a

Packaging of the Peltier elements can be realized in a simple manner with great variability.

If two or more such cuts are made, they will run

preferably parallel or they are parallel and spaced apart brought in. Alternatively or additionally, it is preferred if the at least one cut extends in the transverse direction or is introduced running in the transverse direction. In particular, these variants enable a simplified division of the carrier and an increased efficiency in the production of the Peltier elements.

If two or more such cuts are made, it is conceivable that the cuts, in particular in the longitudinal direction, are introduced equidistantly or at different distances. If equidistant cuts are made, Peltier elements arise which are transverse to the cutting direction, in particular in FIG

Longitudinal, are equal or have an equal width. If the cuts are made at different distances from each other, Peltier elements are produced with different dimensions or widths in the longitudinal direction.

It is conceivable, in particular, to divide the carrier into strips by the cuts, the respective strip being such a Peltier element.

In principle, the respective semiconductor can be applied on the associated side by a corresponding technique in such a way that the semiconductor is present exclusively in the corresponding receptacles and forms the semiconductor sections. Conceivable are techniques with which the semiconductor is introduced only locally in the field of recordings or in the recordings. Suitable, for example, suitably designed, in particular dimensioned, nozzles and the like for applying the semiconductor.

Preferably, at least one of the sides, ie the upper side and / or the lower side, is provided with a temporary layer detachable from the carrier prior to the mounting of the associated receptacles with the semiconductor sections, in particular before the application of the associated semiconductor Application of the associated semiconductor is removed. The respective

Temporarschicht serves primarily for the purpose of preventing semiconductor arrives outside of the recordings on the associated side of the carrier. Removal of the temporary layer also removes semiconductors present on the temporary layer so that subsequently the semiconductor sections remain. This allows a simplified loading of the images with the semiconductor sections, in particular the large-area, that is not local, application of the semiconductor. Thus, the production of the at least one Peltier element is simplified.

The respective temporary layer is preferably applied in a closed manner prior to the introduction of the receptacles of the associated side. Thus, the temporary layer is removed by introducing the recordings in the area of the recordings. In this state, the temporary layer thus forms a mask with free sections that correspond to the receptacles, in particular aligned so that during subsequent loading with the semiconductor sections, in particular before the application of the associated semiconductor, the semiconductor exclusively in the recordings and the rest on the temporary layer passes and thus the semiconductor sections are formed.

It is also conceivable to use a mask as a temporary layer, which has such free sections even before the recordings are introduced.

Advantageous embodiments are those in which such a temporary layer is used, which can be easily detached from the carrier and / or does not allow diffusion of the respective semiconductor or is impermeable to the semiconductor. It is conceivable, in particular, to use a lacquer layer and / or a polymer layer, in particular a polymer-containing lacquer layer, as the temporary layer. An easy release is especially given when the Peel temporary layer by mechanical action from the carrier and / or can be solved by the use of a solvent from the carrier, without the

Semiconductor sections and / or the carrier damage.

The respective temporary layer can be applied to the associated side in any desired manner. It is conceivable to glue the temporary layer to the carrier. Embodiments are also possible in which the temporary layer is coated on the carrier.

The respective temporary layer removed from the carrier may be provided with the corresponding semiconductor as described above. Preferably, the semiconductor is released from the temporary layer and used further, ie recycled. For this purpose, the temporary layer can be dissolved by a corresponding treatment or released from the semiconductor or vice versa.

The placement of the recordings with the semiconductor sections, in particular the application of the semiconductor sections, preferably takes place in such a way that the respective semiconductor adheres to the carrier in the associated recordings or the respective semiconductor section. It is conceivable for this purpose to provide the carrier in the region of the receptacles with a diffusion barrier and / or a bonding agent, wherein these each have a thin extension, in particular in comparison to the semiconductor. To such diffusion barriers and / or

Bonding agents include in particular metals such as nickel, titanium or tungsten, and alloys, in particular of tungsten and titanium, for example WTi.

The loading of the recordings with the semiconductor sections takes place

preferably in such a way that the associated receptacles do not each extend in a direction transverse to the transverse direction and transverse to the longitudinal direction completely and in Querhchtung and / or in the longitudinal direction are completely filled with the semiconductor portion. Thus, a sufficient mechanical and electrical connection of the semiconductor sections is achieved with the carrier and sufficient space for covering with the electrically conductive material, hereinafter also called filler left over, so that the filler sufficiently adheres to the carrier and thus electrically and mechanically with connected to the carrier.

Covering the stocked with the semiconductor sections recordings with the electrically conductive material or filler is advantageously carried out such that the material is introduced only in the recordings and the recordings are filled. It is conceivable to coat the semiconductor sections with the filler for this purpose. This may advantageously be the material from which the carrier is made. This leads to a mechanically and / or electrically stable connection between the carrier and the material.

The covering of the semiconductor sections with the electrically conductive material or filling material can take place by applying the filling material on the entire associated side of the carrier, wherein the filling material is subsequently removed from the separating sections.

It is conceivable to apply a mask on the corresponding side, which has free sections corresponding to the receptacles, so that the electrically conductive material can only reach the receptacles when it is applied to the associated side. The mask is removed after applying the filler. This mask is in particular the temporary layer, which has the free sections corresponding to the receptacles. In this case, the temporary layer is removed after covering the semiconductor portions with the filler. The covering of the semiconductor sections with the filling material preferably takes place in such a way that the associated receptacle is completely filled up.

This is preferably done in such a way that the filling material is aligned with the adjacent separating sections of the carrier and / or forms a closed plane. Thus, in particular, a heat-exchanging surface of the Peltier elements during operation is increased and the efficiency of the Peltier elements is improved.

It is conceivable to apply the electrically conductive material or filling material over a large area on at least one of the sides, such that the filling material also reaches the carrier outside the receptacles. In this case, the associated thermal side of the later at least one Peltier element is at least partially formed by the filling material in the region of the receptacles and outside the receptacles.

The filler material does not necessarily have a flat surface on the side facing away from the associated semiconductor section or the associated semiconductor sections. This means that the filler material is also a bumpy one

may have running surface. Preferred are variants in which the filling material has such a flat planar surface.

The recordings are preferably introduced into the carrier in such a way that they have such a depth extending transversely to the longitudinal direction and transversely to the transverse direction that the laterally adjacent semiconductor sections are arranged in overlapping depth regions or in a same depth or in a flat parallelepiped lie in a predetermined depth. This also means that the depths are such that at a given depth in Transverse alternately images of the top and bottom are arranged. It is conceivable that the recordings each have the same depth or are introduced with the same depth.

The height of the respective semiconductor or semiconductor section running transversely to the longitudinal direction and transversely to the transverse direction can in principle be arbitrary. In particular, the respective semiconductor section may have a height of between 100 μm and 300 μm.

The respective recording can be arbitrarily dimensioned. In particular, a width extending in the transverse direction of the respective receptacle can amount to between 300 μιτι and 1000 μιτι.

The particular semiconductor section, in particular the respective semiconductor, can in principle be introduced in any desired manner onto the associated side, in particular into the associated receptacles. Preferably, at least one of the semiconductor sections, in particular one of the semiconductors, i. the P-type semiconductor and / or the N-type semiconductor, coated on the associated side, in particular in the associated recordings. This allows, in particular together with the temporary layer, a simple placement of the images with the semiconductor sections.

Embodiments in which at least one of the semiconductors is applied to the entire associated side are preferred, the semiconductor applied outside the receptacles being removed, in particular by the removal of the temporary layer. As a result, measures for local application or coating of the semiconductor can be omitted and thus the production of the Peltier elements can be simplified. It is conceivable to apply at least one of the semiconductor sections, in particular one of the semiconductors, by a coating method. Preferably, for applying or coating at least one of the semiconductor sections, in particular one of the semiconductors, a vacuum-based coating method is used.

Sputtering or cathode sputtering is particularly preferably used. During sputtering, the smallest constituents, in particular atoms or groups of atoms, are released from a target by bombardment with ions and then settle on the support and thus coat the support, in particular the receptacles. The ions for dissolving the smallest constituents from the target are thereby accelerated by the use of an electrical potential, wherein the energy of the ions reproduces a so-called sputtering energy. Sputtering simplifies a, in particular uniform,

Coating the corresponding side of the carrier or the corresponding recordings. Thus, therefore, the production of the Peltier elements can be simplified and realized with high precision.

At least one such P-semiconductor section and at least one such N-semiconductor section, in particular both semiconductors, are sputtered

applied, it is conceivable to first coat one of the sides and then the other side with the same sputtering arrangement. For example, the upper side may be first coated with the P-type semiconductor, and then the lower surface may be coated with the same N-type semiconductor sputtering arrangement. For this purpose, the carrier can be turned and / or the sputtering arrangement moved and the target can be changed. It is also conceivable to provide two sputter arrangements in one device, wherein the top side is coated with one arrangement and the bottom side with the other arrangement. Variants prove to be advantageous in which at least one sputtering condition for producing at least one of the semiconductor sections is varied during sputtering. The variation of the sputtering condition leads to a structure of the semiconductor section which changes along the thickness of the semiconductor section thus produced, in particular crystalline. In particular, a so-called superlattice, also called a superlattice, can be produced, which has an increased mechanical and / or thermomechanical effects stability and thus to increased stability of the manufactured Peltier elements and / or increased life thereof and / or, in particular By reducing the unwanted thermal conduction of the phonons, it leads to improved thermoelectric efficiency.

In principle, any desired sputtering conditions can be varied.

In particular, it is conceivable to vary the sputtering energy. The variation can in principle be of any type, wherein preferably periodic changes in the sputtering condition are used.

The electrically conductive material or the filling material can in principle be applied by any method, wherein the filling material is preferably coated in order to simplify the production.

Sputtering can also be used to apply the filling material. That is, the electrically conductive material for covering at least one of the semiconductors is applied by sputtering. In this way, in particular, an advantageous adhesion of the filling material to the carrier and / or the associated semiconductor can be achieved. It is conceivable to use the same sputtering arrangement for sputtering the filling material as for sputtering at least one of the semiconductors. Required is only an exchange or change of the corresponding target.

As a result, the production of the Peltier elements can be simplified and / or implemented more cost-effectively.

It is also conceivable, the application of the respective semiconductor or the

Semiconductor sections and / or the filling material to perform in a multi-chamber sputtering system having a plurality of successively arranged chamber through which the carrier is guided successively, in particular in the manner of a conveyor belt. In the respective chamber, a corresponding sputter arrangement is provided for coating the carrier with the semiconductor or the semiconductor sections or for applying the electrically conductive material or the filling material.

Preferred variants see such a reaction of the method,

In particular, applying the semiconductor, before that the P-Halbleier sections or the P-type semiconductor in the recordings of the top are dimensioned differently than the N-semiconductor sections or the N-type semiconductor in the recordings of

Bottom. This means that the P-semiconductor sections in particular in

Transverse direction and / or in height direction have a different size than the N-semiconductor sections. The different dimensioning of the P-semiconductor sections compared to the N-semiconductor sections leads to

thermodynamically and / or thermomechanically advantageous effects, which in particular an increased thermo-mechanical stability of the respective

Peltier element result. Due to the different dimensions of the respective Peltier element thus thermally induced mechanical

Reduce loads better. The different dimensioning of the P-semiconductor sections compared to the N-semiconductor sections can be realized in principle in any way. It is conceivable, in particular, that the receptacles of the upper side are introduced into the carrier with another transverse width in the transverse direction than the receptacles of the underside. As a result, the P-type semiconductor portions have a different width than the N-type semiconductor portions.

It is also conceivable to apply the P-type semiconductor with another height extending in the height direction than the N-type semiconductor. As a result, the P-type semiconductor portions have a different height than the N-type semiconductor portions.

The recordings and the recesses can each be introduced into the carrier in any desired manner. For this purpose, each material is removed.

Accordingly, material removal measures are used.

Embodiments prove to be advantageous in which the receptacles and / or recesses are introduced with at least one saw blade. In this way, in particular along the longitudinal direction, large or long and along the transverse direction small or narrow recordings or

Recesses realize.

Embodiments in which the recesses are advantageous are advantageous

rounded corners are introduced. In particular, the corners facing away from the associated opening are the respective recess

rounded introduced. As a result, in particular notch stresses are avoided or at least reduced, so that the thermo-mechanical stability of the Peltier elements is improved. It is conceivable to provide the Peltier element on the outside with a dielectric and heat conductive, and thus an electrically insulating and heat conductive layer after covering the stocked with the semiconductor sections shots with the filling material. The layer prevents an external short circuit within the respective Peltier element,

especially in the associated application. Such layers are usually used in an associated application, for example an associated heat exchanger, so that in this way a subsequent separate individual provision of the respective Peltier element with such a layer can be dispensed with. Preferably, the position after the introduction of the

Recesses attached, this is done so that the layer covers the electrical conductive material and / or the carrier outside of the recesses. As a result, an improved thermal efficiency of the respective Peltier element is achieved.

The respective dielectric and thermally conductive layer can in principle be of any desired design. In particular, it can be a plate, a film, a film or a coating. Accordingly, the respective thermally conductive layer can be applied, for example, by a coating method. It is equally conceivable that equipped with the semiconductor sections and with the filling material, in particular with the

Recesses, dip provided carrier in a corresponding bath to apply such, dielectric and thermally conductive layer.

It is conceivable to fill the recesses before providing the layer with an electrically and thermally insulating material. Thus, an improved thermal insulation between the thermal sides of the respective Peltier element and / or the adjacent semiconductor sections is achieved. In addition, this is the mechanical stability of the respective Peltier element improved. The thermally insulating material has a lower thermal conductivity than the layer. In particular, the thermally insulating material has a thermal conductivity of less than 0.1 W / (m ^* K), in particular less than 0.05 W / (m ^* K).

It is understood that in addition to the method for producing the Peltier elements, a Peltier element produced in this way also belongs to the scope of this invention.

In an advantageous development of the solution according to the invention, the Peltier elements produced according to the invention are used for producing a thermoelectric heat exchanger. In this case, a desired surface-specific temperature control of the heat exchanger is determined or specified. Subsequently, the Peltier elements are produced according to the invention, wherein the distance of the cuts in the longitudinal direction and thus a longitudinal width of the respective Peltier element and subsequent distances of the Peltier elements in the heat exchanger to each other are adapted to each other such that this results in the desired area-specific tempering. In particular, Peltier elements can with

different widths are provided by adjusting the distances of the cuts in the longitudinal direction.

It is conceivable, in particular, to arrange the Peltier elements equidistantly in heat exchangers. In this case, therefore, an adaptation of the distances of the cuts and thus the width of the Peltier elements, in order to realize the desired surface-specific temperature control.

It is conceivable, alternatively or in addition to said dielectric and thermally conductive layer, after arranging the Peltier elements in Heat exchanger a dielectric and thermally conductive layer to the

To install Peltier elements. Thus, in particular, an adjacent to at least two adjacent Peltier elements and closed such

dielectric and thermally conductive layer can be realized.

It should be noted that in addition to the method for producing the

Heat exchanger and a heat exchanger produced in this way belongs to the scope of this invention.

Other important features and advantages of the invention will become apparent from the dependent claims, from the drawings and from the associated

Description of the figures with reference to the drawings.

It is understood that the features mentioned above and those yet to be explained below can be used not only in the particular combination given, but also in other combinations or in isolation, without departing from the scope of the present invention.

Preferred embodiments of the invention are illustrated in the drawings and will be described in more detail in the following description, wherein like reference numerals refer to the same or similar or functionally identical components.

It show, each schematically

1 shows a section through a carrier in a first method step for producing Peltier elements,

2 shows the section from FIG. 1 after a subsequent method step, 3 is a plan view of the state shown in Fig. 2,

FIG. 4 shows the view from FIG. 2 in a subsequent method step, FIG.

Fig. 5 is the view of FIG. 4 after performing the in Fig. 4 shown

 Process step,

FIG. 6 is a plan view of the state shown in FIG. 5; FIG.

Fig. 7 shows the view of Fig. 5 after performing another

 Process step,

8 is a plan view of the state shown in FIG. 7;

9 shows the section from FIG. 7 after a further method step,

FIG. 10 is a plan view of the state shown in FIG. 9; FIG.

11 shows the section from FIG. 9 after a further method step, FIG.

FIG. 12 is a plan view of the state shown in FIG. 11; FIG.

13 shows the section from FIG. 11 in a further method step, FIG.

FIG. 14 shows the section from FIG. 13 after carrying out the procedure shown in FIG. 13

 shown process step,

FIG. 15 is a plan view of the state shown in FIG. 14; FIG. 16 is a plan view corresponding to FIG. 15 in a subsequent method step,

17 is a side view of Peltier elements,

18 shows a section through a thermoelectric heat exchanger.

Hereinafter, a method of manufacturing Peltier elements 1 as shown in FIG. 17 will be described with reference to FIGS.

In a first method step illustrated in FIG. 1, a carrier 2 is first provided. The carrier 2 is electrically conductive, for example

containing aluminum, in particular made of aluminum or an aluminum alloy. The carrier 2 is plate-shaped and has along a transverse direction 3 and a transversely to the transverse direction 3 extending longitudinal direction 4 expansions, which are substantially larger, in particular at least three times greater than the extension of the carrier 2 in a direction transverse to the transverse direction 3 and transverse to the longitudinal direction 4 extending height direction 5. The carrier 2 has in the height direction 5 an upper side 6 and a side facing away from the top 6 bottom 7. The top 6 and the bottom 7 are closed and flat in the state shown.

In a subsequent method step, the carrier 2 is provided on the upper side 6 and the lower side 7 each with a temporary layer 8, in particular coated. Such a state of the carrier 2 can be seen in Fig. 2. In this case, the top 6 and the bottom 7 are each provided entirely with the associated temporary layer 8. Fig. 3 shows a top view of the top 6, due to the application of the temporary layer 8 on the top 6 not to see is. In Fig. 3 it can be seen that the plate-shaped carrier 2 is round or circular. The respective temporary layer 8 is designed and / or applied to the carrier 2 such that it can be detached from the carrier 2, in particular without damaging the carrier 2. When

Temporary layer 8, in each case a lacquer layer 36, a polymer layer 37, in particular a polymer-containing lacquer layer 36 ', can be used.

According to FIG. 4, the carrier 2 provided with the respective temporary layer 8 is processed to remove material. For this purpose saw blades 9 can be used, which are each assigned to different saws 10 or a common saw 10. In the example shown in FIG. 4, a plurality of such saw blades 9 are provided on the upper side 6 and the lower side 7, which rotate around an axis of rotation 1 1 running essentially parallel to the transverse direction 3. The arranged on the top 6 saw blades 9 are moved in the direction of the top 6, such that they remove material from the carrier 2.

As a result, the temporary layer 8 is also removed in the corresponding sections. Analogously, arranged on the bottom 7 saw blades 9 are moved in the direction of the bottom 7, so that they in the corresponding

Remove sections of the temporary layer 8 and material of the carrier 2.

The result of the method step shown in FIG. 4 is shown in FIGS. 5 and 6. Thus, receptacles 12 are introduced into the carrier 2. The receptacles 12 are alternately introduced along the transverse direction 3 of the top 6 and the bottom 7 in the carrier 2. That means that in

Transverse 3 adjacent shots 12 alternately on the top 6 and the bottom 7 are open. The receptacles 12 each extend in the longitudinal direction 4 and are separated from one another in the transverse direction 3 by a respective separating section 13. In the example shown, the images 12 by a

corresponding dimensioning and arrangement of the saw blades 9 each one the same in transverse direction 3 extending width 14, hereinafter called receiving width 14, and are arranged in the transverse direction 3 equidistant. That is to say that the separating sections 13 have a same width 15 extending in the transverse direction 3, referred to below as the separating section width 15. Of course, various recording widths 14 and / or separating section widths 15 are possible. After this method step, therefore, the upper side 6 or the lower side 7 are exposed in the region of the receptacles 12, whereas they are covered outside the receptacles 12 by the respective temporary layer 8. In Fig. 6 it can be seen that the receptacles 12 each over the entire, in

Longitudinal 4 extending extension of the support 2 extend. This preferably also applies to the receptacles 12 of the underside 7.

In addition, the respective temporary layer 8 by introducing the

Recordings 12 in the area of recordings 12 removed. This is the

Temporary layer 8 a mask 40, which has 12 corresponding free portions 41 with the receptacles.

In Fig. 5 it can be seen that the respective receptacle 12 does not penetrate the carrier 2. That is to say, a depth 16 extending in the vertical direction 5 of the respective receptacle 12 in the carrier 2, referred to below as the receiving depth 16, is smaller than a thickness 17 of the carrier 2 extending in the height direction 5. In the example shown, all the receptacles 12 have the same recording depth 16 on. The receiving depth 16 of the receptacles 12 is selected such that alternately on the top 6 in a running in the vertical direction 5, predetermined depth range 18 open 12 shots, hereinafter also shots 12 of the top 6 called, and on the bottom 7 open shots 12th .

hereinafter called receptacles 12 of the bottom 7, are arranged. In a subsequent method step, which is indicated in FIGS. 7 and 8, a p-doped P-type semiconductor 19 is applied to the upper side 6 and an n-type N-type semiconductor 20 is applied to the underside 7. As indicated in FIG. 8, the entire surface provided is provided with the respective semiconductor 19, 20. This is done in particular by a coating method, for example by sputtering. Before applying the respective semiconductor 19, 20, a diffusion barrier (not shown) and / or an adhesion promoter (not shown), for example nickel, titanium, tungsten or WTi can be applied. The respective semiconductor 19, 20 coated in the area of the receptacles 12, the top 6 and bottom 7 of the support 12 and outside the receptacles 12, the corresponding temporary layer 8. This results in the receptacles 12 of the top 6 sections 21 of the P-type semiconductor 19, below also called P-semiconductor sections 21, which are separated from each other in the transverse direction 3 and each extending in the longitudinal direction 4. In the shots 12 of the

Bottom 7 arise sections 22 of the N-type semiconductor 20, hereinafter also called N-semiconductor portions 22 which extend in the longitudinal direction 5 and in

Transverse direction 3 are spaced apart. The receptacles 12 of the upper side 6 are thus equipped with the P-type semiconductor 19 or in each case with such a P-type semiconductor section 21, whereas the receptacles 12 of the underside with the N-type semiconductor 20 or such an N-type semiconductor section 22 are equipped. In this case, such an N-semiconductor section 22 is arranged between transverse in the transverse direction 3 adjacent P-semiconductor sections 21 in the transverse direction 3. Analogously, such a P-type semiconductor section 21 is arranged between transversely 3 adjacent N-semiconductor portions 22 in the transverse direction 3. In said depth region 18 of the carrier 2, such a P-type semiconductor portion 21 and such an N-type semiconductor portion 22 are arranged alternately in the transverse direction 3.

When sputtering the semiconductors 19, 20, a sputtering energy, in particular periodically, is preferably varied, so that the semiconductor 19, 20 or the respective Semiconductor section 21, 22 has a superstructure, also called super lattice has. The respective semiconductor section 21, 22 has a height 38 extending in the height direction 5, wherein the heights 38 of the P-semiconductor sections 21 are different, in particular larger, than the heights 38 of the N-semiconductor sections 22.

In a subsequent process step, indicated in FIGS. 9 and 10, the respective temporary layer 8 is removed from the upper side 6 and the underside 7, wherein a state can be seen in FIGS. 9 and 10, in which the respective temporary layer 8 already was removed. By removing the respective temporary layer 8, the semiconductor 19, 20 applied to the respective temporary layer 8 is removed. As a result, the respective semiconductor 19, 20 is removed outside of the receptacles 12. Accordingly, the upper side 6 is provided exclusively with the P-type semiconductor 19 in the receptacles 12, that is to say that on the upper side 6 such P-type semiconductor portions 21 are present exclusively in the receptacles 12. Analogous to this is at the bottom 7

only in the receptacles 12 each such N-type semiconductor section 22 is provided. In the plan view shown in FIG. 10, therefore, the P-semiconductor sections 21 and the upper side 6 of the carrier 2 in the transverse direction 2 can be seen alternately. The N-semiconductor sections 22 indicated in FIG. 10 can not be seen in the view shown and, accordingly, are hatched in order to clarify their position and their course.

Thereafter, as shown in FIGS. 1 1 and 12, the 12 equipped with the semiconductors 19, 20 and semiconductor sections 21, 22 receptacles 12 are provided with an electrically conductive material 23, such that the semiconductor 19, 20 and Semiconductor sections 21, 22 with the electrically conductive material 23,

hereinafter also called filling material 23, are covered. 1 1 and 12 show a state in which the semiconductor sections 21, 22 and the Receivers 12 are already covered with the filler 23. In this

State, the semiconductors 19, 20 and semiconductor sections 21, 22 can be seen neither from the top 6 nor the bottom 7. Accordingly, the semiconductor portions 21, 22 are shown hatched in Fig. 12 to indicate their position. The receptacles 12 are thereby completely filled with the filling material 23, which are shown in dashed lines in Fig. 1 1 for this reason. The electrically conductive material 23 is preferably by a

Coating process, particularly preferably by sputtering, brought to the semiconductor sections 21, 22 and in the receptacles 12. The receptacles 12 of the top 6 are, as indicated in Fig. 1 1, filled with the electrically conductive material 23 so that the electrically conductive material 23 forms with the top 6 of the carrier 2 outside of the receptacles 12 a closed flat surface. The same applies to the receptacles 12 of the bottom 7, which are filled with the electrically conductive filler 23 so that the electrically conductive material 23 forms with the bottom 7 of the carrier 2 outside of the receptacles 12 a closed flat surface. The electrically conductive material 23 is preferably the same material from which the carrier 12 is made, so in particular aluminum or an aluminum alloy.

According to FIG. 13, in a subsequent method step in FIG

respective separation section 13 material of the carrier 2 removed. For this purpose, for example, suitably dimensioned and relatively arranged saw blades 9 are used, which are each rotated about a substantially parallel to the transverse direction 3 axis of rotation 3. The on the

Top 6 arranged saw blades 9 are moved in the direction of the top 6 to remove material of the carrier 2. Analogously, the arranged on the bottom 7 saw blades 9 are moved in the direction of the top 7 to remove material of the carrier 2. As a result, as shown in FIGS. 14 and 15, recesses 24 extending in the longitudinal direction 4 are introduced into the separating sections 13 such that adjacent recesses 24 are alternately open in the transverse direction 3 on the upper side 6 and the lower side 7 of the carrier 2. That is, the recesses 24 are interposed alternately between the upper side 6 and the lower side 7 between P-type semiconductor portions 21 and N-type semiconductor portions 22 adjacent in the transverse direction 3. The recesses 24 are thereby introduced so far into the carrier 2 that between the transversely in the third

adjacent semiconductor sections 21, 22 each have a cavity 25 is formed which separates the transverse in the transverse direction 3 adjacent semiconductor sections 21, 22 in the transverse direction 3. As a result, the adjacent in the transverse direction 3 semiconductor portions 21, 22, in particular exclusively, mechanically and electrically connected to each other by a connecting portion 26 which limits the associated recess 24 and the associated cavity 25 and the material of the carrier 24 and the electric conductive material 23 or

Fill material 23 composed. In the plan view shown in Fig. 15, the semiconductor portions 21, 22 are not visible and shown hatched accordingly. As can be seen in particular in Fig. 14, the

Recesses 24 bottom rounded corners 35 on. this will

achieved in particular by a correspondingly rounded design of the saw blades 9. As a result of this, a Peltier element 1 is produced which has a first thermal side 29 along the upper side 6 and a second thermal side 30 along the lower side 7. The first thermal side 29 is thereby introduced by the remaining after insertion of the recesses 24 upper side 6 of the support 2 and in the receptacles 12 of the top 6

Filling material 23 is formed. The second thermal side 30 is formed by the remaining after insertion of the recesses 24 underside 7 of the carrier 2 and introduced into the recesses 12 of the bottom 7 filler 23. The respective connecting section 26 has a cross-section, seen in FIG. 14, with a base side 41 and two projecting legs 42. In this case, along the transverse direction 3 connecting sections 26 with

alternating orientation or oppositely projecting legs 42 arranged. The bases 41 form the first thermal side 29 and the second thermal side 30 of the Peltier element 1, respectively. One of the legs 42 of the respective connection portion 26 is end-to-end mechanically and electrically connected to one of the P-type semiconductor portions 21 and the other leg 42 end to the adjacent in the transverse direction 3 N-type semiconductor portion 22.

It is conceivable to use on the respective side 6, 7 a single such saw blade 9, which introduces a plurality of such receptacles 12 and / or recesses 24 by a relative adjustment to the carrier 2. Also, a single such saw blade 9 by such additional relative movement to the carrier 2 such receptacles 12 and / or recesses 24 on both sides 6, 7 of the carrier 2 bring.

Fig. 16 shows the view of Fig. 15. An optional one is indicated

Subsequent process step, in which in the carrier 2, as indicated by dashed lines in the transverse direction 3 extending and longitudinally spaced from each other 4 cuts 27 are introduced to the equipped with the semiconductor sections 21, 22 carrier 2 and the Peltier element 1 in FIGS. 14 and 5 to divide into different parts 28, in particular to divide into strips 44, of which three can be seen in Fig. 17. In the example shown, the cuts 27 are equidistant in the longitudinal direction 4, that is to say have an equal spacing 43 in the longitudinal direction 4. The respective part 28 forms such a Peltier element 1. After the introduction of the recesses 24 and preferably before

Inserting the cuts 27, the carrier 2 equipped with the semiconductor sections 21, 22 can be provided on the outside, for example by immersion in a corresponding bath, not shown, with a dielectric, and thus electrically insulating, and thermally conductive layer 39. The layer 39 is preferably applied outside the recesses 24, so that it is not present within the recesses 24. This can be realized by filling the recesses 24 with an electrically and thermally insulating material, not shown, before providing it with the layer 39.

The inventive method thus makes it possible to simple and

cost-effective manner to produce at least two Peltier elements 1. The dimensioning of the Peltier elements 1 can vary by the design or dimensioning of the carrier 2. In the example shown, not all Peltier elements 1 have a same length extending in the transverse direction 3 because of the circular or round design of the carrier 2. A constant length 34 of all Peltier elements 2 can be realized for example by a cuboidal design of the carrier 2.

FIG. 18 shows in a highly simplified manner a thermoelectric heat exchanger 31. The heat exchanger 31 has for tempering a fluid, a

Articles and the like, a plurality of such Peltier elements 1 on. In the example shown, the heat exchanger 31 can be used for controlling the temperature of a rechargeable battery, not shown, which is contacted in a heat transferring manner with the heat exchanger 31. A tempering of the

Heat exchanger 1, in particular a surface-specific temperature control of the heat exchanger 31, in particular by the proportion of

heat transfer with the accumulator contacted surface of the

Heat transfer 1 determines that is occupied by the Peltier elements 1. in the In this example, the Peltier elements 1 of the heat exchanger 31 are arranged parallel to each other and in a spacing direction with an equal distance 32 from each other and thus equidistant. The respective Peltier element 1 in this case has a width 33 extending in the spacing direction, which extends transversely to the length 34 of the Peltier element 1. The width 33 of each

Peltier element 1 is predetermined by the distance 43 of the cuts 27, which are introduced into the carrier 2 (see FIG. Accordingly, the desired area-specific tempering performance can already be influenced and determined during the production of the Peltier elements 1 by the respective spacing 43 between sections 27 adjacent in the longitudinal direction 4. The spacings 32 of the Peltier elements 1 and the spacing 29 of the cuts 27 and thus the width 33 of the respective Peltier element 1 are already matched to one another in the production of the Peltier elements 1 in such a way that the desired tempering performance results.

*****

Claims

claims Method for producing a Peltier element (1), with the Steps:  Providing an electrically conductive carrier (2),  - Introducing in a longitudinal direction (4) extending and in a transverse direction (3) by separating portions (13) separate receptacles (12) in the carrier (2), such that in the transverse direction (3) adjacent  Recordings (12) are alternately open on an upper side (6) and an underside (7) of the support (2) facing away from the upper side, - Equipping the on the top (6) open receptacles (12) each with a p-type P-semiconductor portion (21) and on the bottom (7) open receptacles (12) each with an n-doped N-type semiconductor - section (22),  - Covering the semiconductor sections (21, 22) with an electric  conductive material (23), Inserting recesses (24) extending in the longitudinal direction (4) in the separating sections (13) such that adjacent recesses (12) in the transverse direction (3) alternately on the upper side (6) and on the underside (7) of the carrier ( 2) are open and such that the respective recess (24) forms a cavity (25) which separates the semiconductor sections (21, 22) in the transverse direction (3). 2. The method according to claim 1,  characterized,  the carrier (2), after the introduction of the recesses (24), is introduced by introducing at least one inclined to the longitudinal direction (4).  extending section (27) is divided into at least two separate parts (28) and the respective part (28) forms such a Peltier element (1). 3. The method according to claim 1 or 2,  characterized,  - That the loading of the receptacles (12) with the P-semiconductor sections (21) by the application of a p-doped P-type semiconductor (19) takes place on the upper side (6), and / or  - That the loading of the receptacles (12) with the N-semiconductor sections (22) by the application of an n-doped N-type semiconductor (20) on the bottom (7). 4. The method according to any one of claims 1 to 3,  characterized,  in that prior to equipping the receivers (12) with the P-semiconductor sections (21), a temporary layer (8) which can be detached from the carrier (2) is applied to the upper side (6) and after being populated with the P-semiconductor sections ( 21) is removed, and / or in that, prior to equipping the receptacles (12) with the N-semiconductor sections (22), a temporary layer (8) which can be detached from the carrier (2) is applied to the underside (7) and after being populated with the N-semiconductor sections ( 22) is removed. Method according to claim 4, characterized, that as a temporary layer (8) a lacquer layer (36) and / or a Polymer layer (37) and / or a free sections (41) in the region of the receptacles (12) having mask (40) is used. Method according to one of claims 1 to 5, characterized, in that at least one of the semiconductor sections (21, 22) for loading the associated receptacles (12) is applied by means of sputtering. Method according to claim 6, characterized, that during sputtering at least one of the semiconductor sections (21, 22) at least one sputtering condition varies, in particular periodically changed, is. Method according to one of claims 1 to 7, characterized, in that the electrically conductive material (23) for covering the semiconductor sections (21, 22) is applied by means of sputtering. Method according to one of claims 1 to 8, characterized, the method is carried out such that the P-semiconductor sections (21) have a different size in the transverse direction (3) and / or in a height direction (5) running transversely to the transverse direction (3) and transverse to the longitudinal direction (4) the N-type semiconductor portions (22). 10. The method according to any one of claims 1 to 9,  characterized,  in that the receptacles (12) which are open on the upper side (6) are introduced into the carrier (2) with another width (14) extending in the transverse direction (3) than the receptacles (12) which are open on the underside (7). 1 1. Method according to one of claims 1 to 10,  characterized,  in that the P-semiconductor sections (21) extend with another in a direction transverse to the transverse direction (3) and transverse to the longitudinal direction (4)  Elevation (5) extending height (38) are applied as the N-semiconductor portions (22). 12. The method according to any one of claims 3 to 10,  characterized,  in that the carrier (2) provided with the receptacles (12) is provided with the N-type semiconductor (20) flatly with the P-type semiconductor (19) and / or from the lower surface (7) from the upper side (6). 13. The method according to any one of claims 1 to 12,  characterized,  the receptacles (12) and / or the recesses (24) are introduced with at least one saw blade (9). 14. The method according to any one of claims 1 to 12,  characterized, that recesses (24) are introduced with rounded corners (35). 15. The method according to any one of claims 1 to 14,  characterized,  in that after covering the semiconductor sections (21, 22) with the electrically conductive material (23), in particular after the introduction of the recesses (24), a dielectric and thermally conductive layer (39) is applied on the outside. 16. A method for producing a thermoelectric heat exchanger (31) having a plurality of Peltier elements (1), comprising the steps of:  Determining a desired area-specific tempering capacity of the heat exchanger (31),  - Producing Peltier elements (1) according to one of claims 2 to 15, wherein at least two cuts (27) are introduced and a longitudinal direction (4) extending distance (43) of the cuts (27) in the carrier (2) and the later Distances (32) of the Peltier elements (1) in the heat exchanger (31) are adapted to one another in such a way that the desired tempering results. 17. The method according to claim 16,  characterized,  the Peltier elements (1) are arranged equidistantly in the heat exchanger (31). 18. Peltier element (1) for a thermoelectric heat exchanger (31), with alternately arranged and electrically contacted P-semiconductor sections (21) and N-semiconductor sections (22), wherein the Peltier element (1) according to the method of any one of claims 1 to 15 is produced. Thermoelectric heat exchanger (31) with a plurality of Peltier elements (1), which are arranged at a distance (32) from each other, wherein the heat exchanger (31) according to the method of claim 16 or 17 is prepared.