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WO2018101767A1 - Ems antenna module, manufacturing method therefor, and semiconductor package comprising same - Google Patents

Ems antenna module, manufacturing method therefor, and semiconductor package comprising same Download PDF

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Publication number
WO2018101767A1
WO2018101767A1 PCT/KR2017/013910 KR2017013910W WO2018101767A1 WO 2018101767 A1 WO2018101767 A1 WO 2018101767A1 KR 2017013910 W KR2017013910 W KR 2017013910W WO 2018101767 A1 WO2018101767 A1 WO 2018101767A1
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WO
WIPO (PCT)
Prior art keywords
substrate
ems
encapsulant
antenna module
radiation angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/013910
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French (fr)
Korean (ko)
Inventor
권용태
이준규
이재천
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nepes Co Ltd
Original Assignee
Nepes Co Ltd
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Filing date
Publication date
Application filed by Nepes Co Ltd filed Critical Nepes Co Ltd
Publication of WO2018101767A1 publication Critical patent/WO2018101767A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/24195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Definitions

  • the present invention relates to an EMS antenna module, a method for manufacturing the same, and a semiconductor package including the same. More particularly, the present invention relates to an EMS antenna module capable of adjusting a signal emission angle of an antenna, thereby improving signal transmission speed and distance, A semiconductor package capable of preventing signal interference.
  • Electromagnetic Compatibility or Electromagnetic Compatibility refers to the ability of an electromagnetic wave from a device that generates electromagnetic waves to function normally without the effects of electromagnetic waves from other devices. Electrons are called electromagnetic interference or electromagnetic interference (EMI). Unnecessary electromagnetic waves, which are incidentally generated from electronic devices, are radiated into spaces or conducted through power lines, causing electromagnetic interference to devices or other devices. . The latter is called electromagnetic immunity or electromagnetic susceptibility (EMS), and the ability of an equipment or system to operate without degradation in the presence of electromagnetic interference, while maintaining its inherent performance from the effects of radiated or conducted unwanted electromagnetic waves. It is the ability to act.
  • a semiconductor package including an antenna for handling a signal such as a network module, is required to have various electromagnetic shielding or radiating structures in order to not only miniaturize, but also to realize excellent electromagnetic interference (EMI) or electromagnetic wave immunity (EMS) characteristics.
  • EMI electromagnetic interference
  • EMS electromagnetic wave immunity
  • a semiconductor chip is attached to the PCB substrate having the antenna pattern embedded therein using an adhesive and electrically connected to the PCB substrate through wire bonding.
  • Such a conventional package structure may receive electromagnetic interference from an external device or the like for signal transmission of the antenna, and it is difficult to expect a high transmission speed due to a low signal concentration of the antenna.
  • the final package thickness due to the wire bonding and PCB substrate is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire is increased.
  • the present invention is to provide a fan-out package by inserting the EMS structure to optimize the radiation angle of the antenna module to improve the transmission speed and distance, and to embed the EMS antenna module in a semiconductor package to protect from oxidation and damage.
  • an EMS antenna module including an upper surface on which an antenna pattern is formed and a lower surface facing the upper surface; A first encapsulant provided on an upper surface of the substrate; And a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material and adjusting a signal radiation angle of the antenna pattern, wherein the radiation angle adjusting unit may be spaced apart from the antenna pattern.
  • the substrate may include via holes penetrating through upper and lower surfaces of the substrate, and the antenna pattern may be electrically connected through the via holes.
  • the via hole may include a connection extension part that extends along the lower surface of the substrate from the bottom of the via hole.
  • the upper surface of the substrate may be provided with a protective layer covering the antenna pattern
  • the lower surface of the substrate may be provided with a protective layer covering the connection extension.
  • the upper surface of the radiation angle control unit may be coplanar with the upper surface of the first encapsulant.
  • the bottom surface of the radiation angle control unit may be coplanar with the bottom surface of the substrate.
  • the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.
  • a method of manufacturing an EMS antenna module includes arranging a substrate having an antenna pattern on a first carrier, sealing the substrate with a first encapsulant, and surrounding and spaced apart from the antenna pattern. And forming recesses recessed from the upper surface of the first encapsulant, filling the recesses with a conductive member, cutting the conductive member and the substrate into separate modules.
  • the upper surface of the first encapsulant may be ground before removing the first carrier.
  • first tape may be attached to a surface from which the first carrier is removed before the groove is formed, and the first tape may be removed after the groove is formed.
  • a second tape may be attached to the lower surface of the substrate.
  • the semiconductor package including the EMS antenna module according to an embodiment of the present invention for solving the above problem is, a substrate having an antenna pattern formed on the upper surface and connected to the antenna pattern, provided on the substrate
  • An EMS antenna module including a first encapsulation material and a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material to adjust a signal radiation angle of the antenna pattern;
  • Semiconductor chips A second encapsulant molding the EMS antenna module and the semiconductor chip to be integrated;
  • a wiring unit provided below the EMS antenna module and the semiconductor chip and electrically connected to the EMS antenna module and the semiconductor chip; And an external connection terminal electrically connected to the wiring unit.
  • the wiring unit may include a first insulating layer exposing the signal pad of the semiconductor chip and a via hole of the EMS antenna module, a redistribution layer electrically connected to the signal pad and the via hole, and a second insulating layer. It may include an insulating layer and a bump metal layer electrically connected to the redistribution layer.
  • the second encapsulation material may be the same material as the first encapsulation material.
  • the radiation angle control unit may extend below the substrate and be connected to the wiring unit.
  • the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.
  • EMS antenna module and a semiconductor package including the same can improve the transmission speed of the antenna signal by adjusting the optimal radiation angle.
  • an EMS antenna module rather than a wire bonded PCB board with built-in antennas, can reduce overall package thickness and improve electrical signaling rates.
  • an EMS antenna module is built into the package to protect it from oxidation and damage.
  • FIG. 1 is a cross-sectional view illustrating an EMS antenna module according to an embodiment of the present invention.
  • FIG. 2 to 9 are cross-sectional views illustrating a method of manufacturing the EMS antenna module of FIG. 1.
  • FIG. 10 is a cross-sectional view illustrating a wire bonded semiconductor package in which a conventional antenna is incorporated.
  • FIG. 11 is a cross-sectional view for describing a semiconductor package including the EMS antenna module of FIG. 1.
  • 12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package of FIG. 11.
  • 19 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
  • 20 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating an EMS antenna module 100 according to an embodiment of the present invention.
  • an EMS antenna module 100 includes a substrate 110 on which an antenna pattern 113 is formed, a first encapsulant 120, and a radiation angle adjusting unit 130. do.
  • the substrate 110 may be a via frame including a via hole 114 that vertically penetrates the substrate 110.
  • the substrate 110 may be a printed circuit board (PCB) on which the antenna pattern 113 is formed, or may be an insulation frame.
  • the insulating frame may comprise an insulating material. For example, it may include silicon, glass, ceramic, plastic, or polymer.
  • An antenna pattern 113 may be provided on the upper surface 111 of the substrate 110.
  • the antenna pattern 113 may extend along the upper surface 111 of the substrate 110 to form a pattern.
  • the antenna pattern 113 may be a conductive material, for example, may include a metal, and may include copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof.
  • the antenna pattern 113 may be formed using various methods such as deposition and plating.
  • the antenna pattern 113 may be formed on the upper surface 111 of the substrate 110 by a laser direct structuring (LDS) method.
  • LDS method refers to forming a metal pattern through a plating process after performing a pattern processing using a laser on the surface of the thermoplastic resin formed by injection or the like.
  • the resin surface processed through laser processing may have a rough surface, so that the adhesion of the plated metal may increase due to the anchoring effect.
  • the antenna pattern 113 may be formed in various ways in addition to the above method.
  • the via hole 114 may be formed to penetrate the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 of the substrate 110.
  • the via hole 114 may be filled with a conductive material, and the conductive material may include a metal, and may include, for example, copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof. .
  • the conductive material and the antenna pattern 113 filled in the via hole 114 may be the same conductive material and may be connected to one end of the antenna pattern 113. Therefore, the antenna pattern 113 may be connected to the lower surface 112 of the substrate through the via hole 114.
  • connection extension 115 extending from the lower surface 112 of the substrate 110 along the lower surface 112 of the conductive material filled in the via hole 114 may be formed.
  • the connection extension part 115 may be provided to have an area larger than that of the via hole 114, thereby improving connection reliability with the wiring part of the package in which the EMS antenna module 100 is mounted.
  • the antenna pattern 113 and the connection extension 115 may be integrally formed with the via hole 114.
  • the connection extension 115 may have a pad shape attached to one end of the via hole 114.
  • the substrate 110 may further include a protective layer 116 on the upper surface 111 and the lower surface 112.
  • the protective layer 116 is formed to cover the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 on which the connection extension 115 is formed, thereby forming the antenna pattern 113 and the connection. It may serve to protect the extension 115.
  • the protective layer 116 may be a solder resist.
  • Solder resist is a functional coating material to be applied to a printed circuit board, masking and protecting the surface circuit of the substrate, it is possible to prevent solder bridge during soldering (solder bridge).
  • the solder resist may be formed by a photo process such as PSR (Photo Solder Resist), LPI (Liquid Photo Imaging), or an Infra Red (IR) process.
  • the first encapsulant 120 may be formed on the upper surface 111 of the substrate 110.
  • the first encapsulant 120 may include an insulating material, and may include, for example, an epoxy molding compound (EMC), an encapsulant, a prepreg (PPG), or a polyimide (PI). have.
  • EMC epoxy molding compound
  • PPG prepreg
  • PI polyimide
  • the first encapsulation member 120 may cover the upper portion of the substrate 110 to protect the antenna pattern 113 formed on the upper surface 111 from external impact.
  • the radiation angle controller 130 may surround the substrate 110 and the first encapsulant 120 and be spaced apart from each other without being connected to the antenna pattern 113.
  • the radiation angle adjusting unit 130 is formed on both sides of the EMS antenna module 100 to be spaced apart from the antenna pattern 113 to adjust the signal radiation angle (A) of the antenna It can be located to.
  • the radial angle adjustment unit 130 may be a rectangular shape or a triangular shape in the vertical direction. Although illustrated in the drawings a rectangular shape, in addition to the above formation may be provided in a variety of shapes, of course.
  • Radiation angle control unit 130 may include a metal, for example, may include copper (Cu), gold (Au), silver (Ag), titanium (Ti) or alloys thereof.
  • the radiation angle control unit 130 may be formed by a process such as electroless plating, electrolytic plating, sputtering or printing.
  • the upper surface of the radiation angle adjusting unit 130 may be coplanar with the upper surface of the first encapsulant 120. This is to adjust the signal radiation angle A of the antenna pattern 113 by forming the height of the radiation angle adjusting unit 130 by the thickness of the first encapsulant 120.
  • the lower surface of the radiation angle adjusting unit 130 may be equal to or lower than the height at which the antenna pattern 113 of the EMS antenna module 100 is formed. That is, the lower surface of the radiation angle adjusting unit 130 is located at the interface between the first encapsulant 120 and the substrate 110 or at a core layer (not shown) of the substrate 110 under the first encapsulant 120. can do. This is to prevent the signal of the antenna pattern 113 from being radiated laterally so as not to affect other elements (not shown) mounted together.
  • the bottom surface of the radiation angle controller 130 may be coplanar with the bottom surface of the substrate 110 (see FIG. 19).
  • the upper and lower lengths of the radiation angle adjusting unit 130 may be the same as the height of the EMS antenna module 100 to ground to the ground, by absorbing the signal radiated to the side to prevent interference such as crosstalk (crosstalk) Can be.
  • the lower surface of the radiation angle control unit 130 may be connected to the wiring unit.
  • the radiation angle adjusting unit 130 may be provided to be inclined so that the signal radiation angle A of the antenna pattern 113 is reduced (see FIG. 20).
  • the radial angle control unit 130 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down. 20 illustrates an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced. By reducing the signal emission angle A of the antenna, the signal can be concentrated, and thus the signal transmission speed can be improved.
  • FIG. 2 to 9 are cross-sectional views for explaining a method of manufacturing the EMS antenna module 100 of FIG. 1 according to an embodiment of the present invention according to the process steps.
  • FIG 2 illustrates a process of attaching the substrate 110 to the first carrier 140.
  • a strip substrate 110a in which a unit substrate 110 including an antenna pattern 113 connected to a via hole 114 is continuously provided is prepared, and the strip substrate 110a is formed as a first substrate. It is disposed on the carrier 140.
  • the strip substrate 110a may be fixed to the first carrier 140 by the first adhesive layer 141. In this case, the strip substrate 110a is disposed on the first carrier 140 so that the antenna pattern 113 faces upward.
  • the drawing shows a strip substrate 110a to which two unit substrates 110 are connected
  • a plurality of EMS antenna modules are processed in one process, including using a strip substrate to which three or more unit substrates 110 are connected. 100 can be manufactured.
  • the first carrier 140 may support the strip substrate 110a and may be formed of a material having considerable rigidity and low thermal deformation.
  • the first carrier 140 may be of a solid type and may include silicon, glass, ceramic, plastic, or polymer, for example For example, a molded article or a polyimide tape may be used.
  • the first adhesive layer 141 may use a double-sided adhesive film.
  • the first adhesive layer 141 may be attached to and fixed on the first carrier 140 on one surface thereof, and the strip substrate 110a may be attached to the other surface.
  • FIG. 3 illustrates a process of molding the first encapsulant 120.
  • the first encapsulant 120 may be injected into a fluid state between the first carrier 140 and an upper mold (not shown) and provided on the first carrier 140.
  • the mold may be pressed and hardened in a high temperature state.
  • the first encapsulation material 120 is injected to cover the upper side of the strip substrate 110a and surround the side surface, and is cured and integrated with time.
  • first encapsulant 120 has been described as being injected in a fluid state as a method of sealing the first encapsulant 120, a method such as being coated or printed may be used. In addition, various techniques conventionally used in the art may be used as a molding method of the encapsulant.
  • the first encapsulant 120 when the first encapsulant 120 is thickly molded on the strip substrate 110a, a process of adjusting the thickness of the first encapsulant 120 may be added by grinding it. Since the thickness of the first encapsulant 120 is related to the height of the above-described radiation angle adjusting unit 130, it may be formed at an appropriate height according to the design of the signal radiation angle A. FIG.
  • FIG 4 illustrates a process of removing the first carrier 140 and attaching the first tape 150a.
  • the first carrier 140 supporting the strip substrate 110a may be removed.
  • the first tape 150a may be attached to a surface from which the first carrier 140 is removed.
  • the first tape 150a adheres to the frame in order to prevent the wafer, the chip, and the like from falling from the equipment during the sawing process.
  • the first tape 150a may be used to attach the strip substrate 110a integrated with the first encapsulant 120 to the sawing equipment in a foil mount process.
  • the first tape 150a may be a UV tape.
  • the UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.
  • the first tape 150a may be used as long as the tape can fix the strip substrate 110a.
  • it may be a double-sided adhesive film.
  • a recess 160 recessed from an upper surface of the first encapsulant 120 integrated with the strip substrate 110a may be formed.
  • the recess 160 fixes the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and fixes the strip substrate 110a. It can be formed through.
  • Half-sawing may be performed using a blade, a laser unit, or an equivalent thereof, and in the case of a blade, materials may be used differently depending on a target. As an example, a diamond blade may be used.
  • the recess 160 may surround a region where the antenna pattern 113 is provided and be spaced apart from the antenna pattern 113.
  • the recess 160 may surround a region where the antenna pattern 113 is provided, but may be formed to be separated from the boundary of the region.
  • the recess 160 may be formed deeper than the height at which the antenna pattern 113 is provided.
  • the shape of the radiation angle adjusting unit 130 may be variously designed to adjust the signal radiation angle A of the antenna as described above.
  • the shape may also be provided in various ways.
  • the upper side may have an inverted trapezoidal shape longer than the lower side, or an inverted triangle shape having the lower side up and the vertex down.
  • FIG. 6 shows a process of removing the first tape 150a.
  • the first tape 150a remaining on the lower surface of the first strip substrate 110a may be removed to facilitate pick-up of the strip substrate 110a.
  • the first tape 150a when the first tape 150a is a UV tape, the first tape 150a may be peeled without contamination or damage by irradiating and curing UV. UV radiation can be performed for this purpose.
  • FIG. 7 illustrates a process of filling the recess 160 with the conductive member 161.
  • the conductive member 161 is filled according to the shape of the groove 160, and the drawing illustrates the conductive member 161 filled in the rectangular groove 160.
  • the conductive member 161 may be filled to form the same plane as the upper surface of the first encapsulant 120. If the upper surface of the filled conductive member 161 and the upper surface of the first encapsulant 120 is not the same plane, it may be further performed by grinding them to form the same plane.
  • the conductive member 161 may include a metal.
  • a metal For example, copper (Cu), gold (Au), silver (Ag), titanium (Ti) or an alloy thereof may be included.
  • the conductive member 161 may be formed by a method such as electroless plating, electrolytic plating, sputtering or printing.
  • the strip substrate 110a needs to be fixed in order to cut into each unit EMS antenna module 100.
  • the second tape 150b may be attached to the lower surface of the strip substrate 110a.
  • the second tape 150b may be made of the same material as the first tape 150a. That is, the second tape 150b may be a UV tape.
  • the UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.
  • the second tape 150b may be made of a different material from that of the first tape 150a, and any tape may be used as long as the tape may fix the strip substrate 110a during the sawing process.
  • it may be a double-sided adhesive film.
  • the strip substrate 110a fixed by attaching and fixing the second tape 150b may be cut and separated into each unit EMS antenna module 100.
  • the conductive member 161 filled in the groove 160 is cut, the conductive member 161 is positioned to surround the antenna pattern 113 of the unit EMS antenna module 100 to adjust the signal radiation angle (A). )
  • the sawing process may cut from the upper surface of the conductive member 161 to the lower surface of the strip substrate 110a to which the second tape 150b is attached in a direction perpendicular to the upper surface of the conductive member 161. Cutting may be performed using a diamond blade, laser unit or equivalent thereof.
  • a strip substrate 110a in which two unit substrates 110 are continuously provided is illustrated. 8 and 9, the conductive member 161 positioned between the two unit substrates 110 may be cut once or twice or more. Two or more cuttings may be required to form a narrow width of the radial angle adjusting unit 130 formed by cutting the conductive member 161. On the other hand, the conductive member 161 located at both ends of the strip substrate 110a may be sufficient for one cutting.
  • the first encapsulant 120 sealing the side surface of the strip substrate 110a may be cut to be removed, or the first encapsulant 120 may be cut to remain after cutting.
  • the unit EMS antenna module 100 cut to remove the first encapsulant 120 is illustrated.
  • the semiconductor package 1000 including the EMS antenna module 100 and a manufacturing method thereof will be described.
  • FIG. 10 is a cross-sectional view illustrating a wire bonding fan-out semiconductor package in which a conventional antenna is incorporated.
  • a semiconductor chip 201 is attached to a printed circuit board 401 having an antenna pattern 101 embedded therein, and is electrically connected to the printed circuit board 401 through wire 102 bonding.
  • a conventional package structure may receive electromagnetic interference for signal transmission of an antenna from an external device, etc., and it is difficult to expect a fast transmission speed because signal concentration cannot be adjusted because the signal radiation angle of the antenna cannot be adjusted.
  • the final package thickness due to the wire 102 bonding and the printed circuit board 401 is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire 102 is increased.
  • FIG. 11 is a cross-sectional view illustrating a semiconductor package 1000 according to an embodiment of the present invention.
  • the semiconductor package 1000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500 may be included.
  • the EMS antenna module 100 may include a via hole 114 having an antenna pattern 113 formed on an upper surface 111 and penetrating through the upper surface 111 and the lower surface 112 to be connected to the antenna pattern 113.
  • a substrate 110 including the substrate 110, a first encapsulant 120 provided on the substrate 110, and the antenna pattern 113 surrounded by the substrate 110 and the first encapsulant 120. It may include a radial angle control unit 130 spaced apart from).
  • the connection extension 115 extending along the lower surface 112 of the substrate 110 and connected to the via hole 114 is provided on the upper surface 111 and the lower surface 112 of the substrate 110.
  • the protective layer 116 may be further included.
  • the antenna pattern 113 of the EMS antenna module 100 is connected to the via hole 114 and may be electrically connected to the signal pad 210 of the semiconductor chip 200 through the wiring unit 400. Accordingly, the antenna pattern 113 may receive and transmit a signal from the semiconductor chip 200.
  • the first encapsulant 120 provided on the substrate 110 and the second encapsulant 300 for sealing the semiconductor package 1000 may transmit a signal, and are controlled by the radiation angle controller 130. By adjusting the signal radiation angle A (see FIG. 1), it is possible to concentrate the signal and improve the transmission speed.
  • the radiation angle adjusting unit 130 of the EMS antenna module 100 adjusts the signal radiation angle A, and simultaneously absorbs the signal radiated to the side to the semiconductor chip 200 or another device (not shown). It is possible to prevent the occurrence of electromagnetic interference (EMI).
  • EMI electromagnetic interference
  • electromagnetic wave immunity may be provided to shield an electromagnetic wave emitted from another device (not shown) and transmit a signal normally.
  • the semiconductor chip 200 may be, for example, an integrated circuit (Die or IC).
  • the semiconductor chip 200 may be a memory chip or a logic chip.
  • the memory chip may include DRAM, SRAM, flash, PRAM, ReRAM, FeRAM, or MRAM.
  • the logic chip may be a controller for controlling memory chips.
  • the semiconductor chip 200 may have an active surface including an active region in which a circuit is formed, and an inactive surface opposite to the active surface.
  • a signal pad 210 may be formed on the active surface for exchanging signals with the outside.
  • the signal pad 210 may be integrally formed with the semiconductor chip 200, and the signal pad 210 and the active surface may be provided in the same plane.
  • the bumps may be attached to one surface of the semiconductor chip 200 instead of the signal pad 210 integrally formed with the semiconductor chip.
  • the bumps may be copper pillar bumps or solder bumps.
  • the signal pad 210 is electrically connected to the wiring unit 400.
  • the connection of the signal pad 210 and the wiring unit 400 may be based on a bump or a conductive adhesive material.
  • it may be solder joint bonding by a molten material of a metal (including lead (Pb) or tin (Sn)).
  • the semiconductor chip 200 may be disposed to face the active part on which the signal pad 210 is formed to face downwards. At this time, the active surface of the semiconductor chip 200 and the lower surface of the EMS antenna module 100 may form the same plane.
  • the EMS antenna module 100 may be disposed together, and may be electrically connected to the wiring unit 400 through the signal pad 210.
  • the second encapsulant 300 may be molded to integrate the EMS antenna module 100 and the semiconductor chip 200.
  • the second encapsulant 300 may include an insulator and may include, for example, an epoxy mold compound (EMC) or an encapsulant.
  • EMC epoxy mold compound
  • the second encapsulant 300 may be hardened in a high temperature environment after being injected in a fluid state. For example, it may include a step of heating and pressurizing the second encapsulant 300 at the same time, and at this time, a gas may be removed from the second encapsulant 300 by adding a vacuum process. As the second encapsulant 300 is cured, the EMS antenna module 100 and the semiconductor chip 200 are integrated to form a structure. After the second encapsulant 300 is sealed, the semiconductor package 1000 may have a rectangular cross section.
  • the second encapsulant 300 may be filled between the EMS antenna module 100 and the semiconductor chip 200.
  • the second encapsulant 300 may be provided to surround the top and side surfaces of the EMS antenna module 100 and the semiconductor chip 200. Therefore, the EMS antenna module 100 and the semiconductor chip 200 may be surrounded by the second encapsulant 300 and may not be exposed to the outside, and may be protected from external impact.
  • the second encapsulant 300 may be made of the same material as the first encapsulant 120 of the EMS antenna module 100.
  • the wiring unit 400 is positioned below the EMS antenna module 100 and the semiconductor chip 200 to electrically connect them, and may also electrically connect an external connection terminal 500 to be described later.
  • the wiring unit 400 includes insulating layers 410 and 430 and wiring layers 420 and 440.
  • the wiring unit 400 may include a first insulating layer 410, a redistribution layer 420, a second insulating layer 430, and a bump metal layer 440.
  • the first insulating layer 410 may be disposed under the EMS antenna module 100 and the semiconductor chip 200.
  • the redistribution layer 420 may be disposed between the first insulating layer 410 and the second insulating layer 430, and may include the signal pad 210 of the semiconductor chip 200 and the via hole 114 of the EMS antenna module 100. Can be connected.
  • the second insulating layer 430 may be disposed between the redistribution layer 420 and the bump metal layer 440.
  • the bump metal layer 440 may be connected to the redistribution layer 420.
  • the redistribution layer 420 and the bump metal layer 440 may include a conductive material, for example, a metal.
  • a conductive material for example, a metal.
  • copper (Cu), aluminum (Al) or an alloy thereof may be included.
  • the first insulating layer 410 and the second insulating layer 430 may include an organic or inorganic insulating material.
  • the first insulating layer 410 and the second insulating layer 430 may include, for example, an organic insulating material such as an epoxy resin, and an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). It may include.
  • the wiring unit 400 may be formed by a metallization relocation process (RDL).
  • RDL metallization relocation process
  • a metal pattern having a fine pattern may be formed on one surface of the semiconductor chip 200 on which the signal pad 210 is formed, that is, the active surface by using a photoresist process and a plating process.
  • the first insulating layer 410 and the second insulating layer 430 may be formed of a dielectric coating.
  • the wiring unit 400 may rearrange the semiconductor chip 200 to form a circuit. That is, since the semiconductor chip 200 is rearranged by the wiring unit 400, the semiconductor package 1000 may have a fan-out structure. Therefore, the input / output terminals of the semiconductor chip 200 may be miniaturized and the number of input / output terminals may be increased.
  • the external connection terminal 500 may be connected to the bump metal layer 440 to electrically connect the semiconductor package 1000 to an external circuit or another semiconductor package (not shown).
  • solder ball is illustrated as an example of the external connection terminal 500 in the drawing, it may be a solder bump and may be made of a material other than solder.
  • the surface of the external connection terminal 500 may be subjected to surface treatment such as organic coating or metal plating to prevent the surface from being oxidized.
  • the organic material may be an organic solder preservation (OSP) coating
  • the metal plating may be treated with gold (Au), nickel (Ni), lead (Pb), silver (Ag) plating, or the like.
  • 12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package 1000 of FIG. 11 according to an embodiment of the present invention according to process steps.
  • FIG. 12 illustrates a process of attaching the EMS antenna module 100 and the semiconductor chip 200 on the second carrier 600.
  • the EMS antenna module 100 and the semiconductor chip 200 are disposed on the second carrier 600.
  • the EMS antenna module 100 and the semiconductor chip 200 may be fixed to the second carrier 600 by the second adhesive layer 610.
  • the EMS antenna module 100 is disposed on the second carrier 600 so that the first encapsulant 120 and the radiation angle adjusting unit 130 face upwards, and the semiconductor chip 200 includes a signal pad ( An active surface (not shown) having the 210 formed thereon is disposed on the second carrier 600 to face downward.
  • the EMS antenna module 100 and the semiconductor chip 200 may be disposed to be spaced apart from each other.
  • a single semiconductor chip 200 is disposed together with the EMS antenna module 100 in the drawing, alternatively, a plurality of semiconductor chips may be arranged according to a design.
  • one semiconductor package 1000 is manufactured on the second carrier 600 in the drawing, in contrast, on the second carrier 600, a plurality of EMS antenna modules 100 and a semiconductor chip are spaced at predetermined intervals.
  • the 200 may be attached to simultaneously manufacture a plurality of semiconductor packages 1000 in a single process.
  • the second carrier 600 supports the EMS antenna module 100 and the semiconductor chip 200, and may be formed of a material having considerable rigidity and low thermal deformation.
  • the second carrier 600 may be a material of a solid type. For example, a material such as a mold molding or a polyimide tape may be used.
  • the second adhesive layer 610 may use a double-sided adhesive film, and one surface may be attached and fixed on the second carrier 600, and the EMS antenna module 100 and the semiconductor chip 200 may be attached to the other surface. .
  • FIG. 13 illustrates a process of molding the second encapsulant 300.
  • the second encapsulant 300 may be injected in a state of fluidity between the third carrier 600 and the upper mold (not shown) and provided on the second carrier 600.
  • the mold may be pressed and hardened in a high temperature state.
  • the second encapsulant 300 is injected to cover the upper side of the EMS antenna module 100 and the semiconductor chip 200 and surround the side surface, and is cured and integrated with time.
  • the second encapsulant 300 is injected in a fluid state as a method of sealing the second encapsulant 300, a method such as being applied or printed may be used.
  • various techniques conventionally used in the art may be used as a molding method of the encapsulant.
  • the third carrier 700 may be attached to a surface facing the removed surface.
  • the upper surface of the sealed second encapsulant 300 may be fixed to the third carrier 700 by the third adhesive layer 710.
  • the third carrier 700 may be made of the same material as the second carrier 600, and the third adhesive layer 710 may also be made of the same material as the second adhesive layer 610.
  • 15 to 17 illustrate a redistribution process of forming the wiring unit 400 of the semiconductor package 1000 and a process of attaching the external connection terminal 500.
  • the first insulating layer 410 may be formed on the substrate.
  • the first insulating layer 410 may coat the insulating material and then expose the connection extension 115 and the signal pad 210 through an etching process.
  • the redistribution layer 420 is formed on the first insulating layer 410.
  • the redistribution layer 420 is connected to the exposed connection extension 115 and the signal pad 210 and connects the EMS antenna module 100 and the semiconductor chip 200.
  • the redistribution layer 420 may form a metal pattern through a photoresist process after coating a metal material on the first insulating layer 410.
  • the redistribution layer 420 may be coated through a general plating process.
  • the semiconductor package 1000 may have a fan-out structure.
  • a second insulating layer 430 is formed on the redistribution layer 420, and a bump metal layer 440 connected to the redistribution layer 420 is formed on the second insulating layer 430.
  • the second insulating layer 430 may expose a hole having a predetermined interval of the redistribution layer 420 through an etching process after coating an insulating material on the redistribution layer 420.
  • the bump metal layer 440 is formed on the second insulating layer 430 and may be connected to the redistribution layer 420 through the exposed hole.
  • the bump metal layer 440 may be formed by coating a metal material on the second insulating layer 430 and then performing a photoresist process.
  • an external connection terminal 500 is formed on the bump metal layer 440 of the wiring unit 400.
  • the external connection terminal 500 may be connected to the bump metal layer 440.
  • the external connection terminal 500 may be electrically connected to the wiring unit 400, and may be used as a medium for connecting the semiconductor package 1000 to an external circuit or another semiconductor package (not shown).
  • one side of the external connection terminal 500 may be connected to the bump lower metal layer 24, and the other side thereof may be exposed to the outside.
  • the third adhesive layer 710 may also be removed at the same time.
  • FIG. 19 and 20 are cross-sectional views illustrating another example of a semiconductor package 1000 according to an example embodiment.
  • the semiconductor packages 2000 and 3000 according to another exemplary embodiment of the present invention have the same configuration except that the shapes of the semiconductor package 1000 and the radiation angle controllers 130-1 and 130-2 of FIG. 11 are different from each other. Bar overlapping descriptions will be simplified or omitted.
  • a semiconductor package 2000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.
  • the bottom surface of the radiation angle control unit 130-1 of the EMS antenna module 100 is provided in the same plane as the bottom surface of the substrate 110, and the radiation angle control unit 130-1 is connected to the wiring unit ( 400).
  • the upper and lower lengths of the radiation angle adjusting unit 130-1 to be the same as the height of the EMS antenna module 100 to be grounded to the wiring unit 400, the noise emitted to the side can be absorbed to reduce noise. .
  • the radiation angle adjusting unit 130-1 grounded to the wiring unit 400 is a strip substrate, not half sawing, in the process of forming the recess 160 during the manufacturing process of the EMS antenna module 100. It can be formed by cutting all to the lower surface of (110a). In this case, the strip substrate 110a integrated with the first encapsulant 120 may be firmly fixed using the first tape 150a.
  • the semiconductor package 3000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.
  • the radiation angle adjusting unit 130-2 of the EMS antenna module 100 may be inclined.
  • the inner surface of the radiation angle adjusting unit 130-2 may be inclined to reduce the signal radiation angle A of the antenna pattern 113, the signal can be concentrated and the signal transmission speed can be improved.
  • the radial angle adjusting unit 130-2 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down.
  • the drawing shows an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced.
  • the radial angle adjusting unit 130-2 having the inner side inclined in the process of forming the groove 160 during the manufacturing process of the EMS antenna module 100 includes a groove such as an inverted triangle or an inverted triangle instead of a rectangular shape. It can be formed by forming 160.
  • the groove 160 such as an inverted triangle or an inverted triangle shape, is fixed by mounting the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and then half sawing. Can be formed.

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Abstract

Disclosed are an EMS antenna module and a semiconductor package comprising the same. According to an embodiment of the present invention, the EMS antenna module comprises: a substrate including an antenna pattern and a via hole; a first sealing material on the upper portion of the substrate; and an emission angle adjustment unit for adjusting a signal emission angle of an antenna. A signal transmission speed can be improved by maintaining an optimum emission angle of an antenna signal through the emission angle adjustment unit of the EMS antenna module, and the semiconductor package comprising the same can normally operate while maintaining unique performance against electromagnetic interference.

Description

EMS 안테나 모듈 및 그 제조방법과 이를 포함하는 반도체 패키지EMS antenna module and manufacturing method thereof and semiconductor package including same

본 발명은 EMS 안테나 모듈 및 그 제조방법과 이를 포함하는 반도체 패키지에 관한 것으로, 더욱 상세하게는 안테나의 신호 방사 각도를 조절할 수 있는 EMS 안테나 모듈을 통해 신호 전달속도 및 거리를 향상시키고 반도체 칩과의 신호 간섭을 방지할 수 있는 반도체 패키지에 관한 것이다.The present invention relates to an EMS antenna module, a method for manufacturing the same, and a semiconductor package including the same. More particularly, the present invention relates to an EMS antenna module capable of adjusting a signal emission angle of an antenna, thereby improving signal transmission speed and distance, A semiconductor package capable of preventing signal interference.

최근 반도체 기술의 발달에 따라 첨단 전자 산업이 눈부시게 발전하였으며, 이에 따른 전자파의 발생도 급격히 증가하였다. 이러한 전자 기기들에 의해 발생하는 많은 전자파는 타 전자 기기들의 정상 동작을 방해하여 문제가 되고 있다.Recently, with the development of semiconductor technology, the high-tech electronic industry has developed remarkably, and the generation of electromagnetic waves has increased rapidly. Many electromagnetic waves generated by these electronic devices are becoming a problem by disturbing the normal operation of other electronic devices.

전자파 양립성 또는 전자파 적합성(EMC, Electromagnetic Compatibility)은 전자파를 발생시키는 기기로부터 나오는 전자파가 다른 기기의 성능에 장해를 주지 않음과 동시에 다른 기기에서 나오는 전자파의 영향으로부터도 정상 동작할 수 있는 능력을 말한다. 전자는 전자파 간섭 또는 전자파 장해(EMI, Electromagnetic Interference)라 하며, 전자기기로부터 부수적으로 발생되는 불필요한 전자파가 공간으로 방사되거나 전원선을 통해 전도되어 그 자체의 기기 또는 타 기기에 전자기적 장해를 유발한다. 후자는 전자파 내성 또는 전자파 감응성(EMS, Electromagnetic Susceptibility)라 하며, 전자파 장해가 존재하는 환경에서 기기 또는 시스템이 성능 저하 없이 동작할 수 있는 능력으로서 방사 또는 전도되는 불요전자파의 영향으로부터 고유성능을 유지하면서 동작할 수 있는 능력을 말한다.Electromagnetic Compatibility or Electromagnetic Compatibility (EMC) refers to the ability of an electromagnetic wave from a device that generates electromagnetic waves to function normally without the effects of electromagnetic waves from other devices. Electrons are called electromagnetic interference or electromagnetic interference (EMI). Unnecessary electromagnetic waves, which are incidentally generated from electronic devices, are radiated into spaces or conducted through power lines, causing electromagnetic interference to devices or other devices. . The latter is called electromagnetic immunity or electromagnetic susceptibility (EMS), and the ability of an equipment or system to operate without degradation in the presence of electromagnetic interference, while maintaining its inherent performance from the effects of radiated or conducted unwanted electromagnetic waves. It is the ability to act.

네트워크 모듈과 같이 신호를 취급하는 안테나가 포함된 반도체 패키지는 소형화뿐만 아니라 전자파 간섭(EMI) 또는 전자파 내성(EMS) 특성을 우수하게 구현하기 위해 다양한 전자파 차폐 또는 방사 구조를 구비할 것이 요구된다.A semiconductor package including an antenna for handling a signal, such as a network module, is required to have various electromagnetic shielding or radiating structures in order to not only miniaturize, but also to realize excellent electromagnetic interference (EMI) or electromagnetic wave immunity (EMS) characteristics.

종래의 팬-아웃 반도체 패키지의 경우, 안테나 패턴이 내장된 PCB 기판 상에 반도체 칩이 접착제를 이용하여 부착되고 와이어 본딩을 통하여 PCB 기판과 전기적으로 연결되는 구조를 갖는다. 이러한 종래의 패키지 구조는 외부 기기 등으로부터 안테나의 신호 전달에 전자파 간섭을 받을 수 있으며, 안테나의 신호 집중도가 떨어져 빠른 전송 속도를 기대하기 어렵다. 또한, 와이어 본딩 및 PCB 기판으로 인한 최종 패키지 두께가 두꺼워질 뿐만 아니라, 와이어의 루프 길이가 길어짐에 따른 전기적 성능이 저하되는 단점이 있다.In the conventional fan-out semiconductor package, a semiconductor chip is attached to the PCB substrate having the antenna pattern embedded therein using an adhesive and electrically connected to the PCB substrate through wire bonding. Such a conventional package structure may receive electromagnetic interference from an external device or the like for signal transmission of the antenna, and it is difficult to expect a high transmission speed due to a low signal concentration of the antenna. In addition, the final package thickness due to the wire bonding and PCB substrate is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire is increased.

본 발명은 EMS 구조를 삽입하여 안테나 모듈의 방사 각도를 최적화함으로써 전송 속도 및 거리를 향상시키고, 상기 EMS 안테나 모듈을 반도체 패키지에 내장하여 산화 및 손상으로부터 보호하는 팬-아웃 패키지를 제공하고자 한다.The present invention is to provide a fan-out package by inserting the EMS structure to optimize the radiation angle of the antenna module to improve the transmission speed and distance, and to embed the EMS antenna module in a semiconductor package to protect from oxidation and damage.

상기 과제를 해결하기 위한 본 발명의 일 실시예에 따른 EMS 안테나 모듈은, 안테나 패턴이 형성된 상부 면과 상기 상부 면에 대향하는 하부 면을 포함하는 기판; 상기 기판의 상부 면 상에 마련되는 제1 봉지재; 및 상기 기판과 상기 제1 봉지재를 둘러싸도록 위치하며 상기 안테나 패턴의 신호 방사각도를 조절하는 방사각 조절부;를 포함하고, 상기 방사각 조절부는 상기 안테나 패턴과 이격하도록 배치될 수 있다.According to an aspect of the present invention, there is provided an EMS antenna module, including an upper surface on which an antenna pattern is formed and a lower surface facing the upper surface; A first encapsulant provided on an upper surface of the substrate; And a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material and adjusting a signal radiation angle of the antenna pattern, wherein the radiation angle adjusting unit may be spaced apart from the antenna pattern.

또한, 상기 기판은 상기 기판의 상부 면과 하부 면을 관통하는 비아홀을 포함하고, 상기 안테나 패턴은 상기 비아홀을 통해 전기적으로 연결될 수 있다.In addition, the substrate may include via holes penetrating through upper and lower surfaces of the substrate, and the antenna pattern may be electrically connected through the via holes.

또한, 상기 비아홀은 상기 비아홀의 하부에서 상기 기판의 하부 면을 따라 연장되는 접속 연장부를 포함할 수 있다.In addition, the via hole may include a connection extension part that extends along the lower surface of the substrate from the bottom of the via hole.

또한, 상기 기판의 상부 면은 상기 안테나 패턴을 덮는 보호층이 마련되고, 상기 기판의 하부 면은 상기 접속 연장부를 덮는 보호층이 마련될 수 있다.In addition, the upper surface of the substrate may be provided with a protective layer covering the antenna pattern, the lower surface of the substrate may be provided with a protective layer covering the connection extension.

또한, 상기 방사각 조절부의 상부 면은 상기 제1 봉지재의 상부 면과 동일평면일 수 있다.In addition, the upper surface of the radiation angle control unit may be coplanar with the upper surface of the first encapsulant.

또한, 상기 방사각 조절부의 하부 면은 상기 기판의 하부 면과 동일평면일 수 있다.In addition, the bottom surface of the radiation angle control unit may be coplanar with the bottom surface of the substrate.

또한, 상기 방사각 조절부는 상기 안테나 패턴의 신호 방사각도가 작아지도록 내측면이 경사지게 마련될 수 있다.In addition, the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.

본 발명의 일 실시예에 따른 EMS 안테나 모듈의 제조방법은, 제1 캐리어 상에 안테나 패턴이 마련된 기판을 배치하고, 상기 기판을 제1 봉지재로 밀봉하고, 상기 안테나 패턴을 둘러싸되 이격하도록, 제1 봉지재의 상부 면으로부터 요입되는 요홈을 형성하고, 상기 요홈에 도전 부재를 충전하고, 상기 도전 부재와 상기 기판을 절삭하여 각각의 모듈로 분리하는 공정을 포함할 수 있다.According to an embodiment of the present invention, a method of manufacturing an EMS antenna module includes arranging a substrate having an antenna pattern on a first carrier, sealing the substrate with a first encapsulant, and surrounding and spaced apart from the antenna pattern. And forming recesses recessed from the upper surface of the first encapsulant, filling the recesses with a conductive member, cutting the conductive member and the substrate into separate modules.

또한, 상기 제1 캐리어를 제거하기 전에 상기 제1 봉지재의 상부 면을 그라인딩할 수 있다.In addition, the upper surface of the first encapsulant may be ground before removing the first carrier.

또한, 상기 요홈을 형성하기 전에 상기 제1 캐리어가 제거된 면에 제1 테이프를 부착하고, 상기 요홈을 형성한 후에 상기 제1 테이프를 제거할 수 있다.In addition, the first tape may be attached to a surface from which the first carrier is removed before the groove is formed, and the first tape may be removed after the groove is formed.

또한, 상기 도전 부재와 상기 기판을 절삭하기 전에 상기 기판의 하부 면에 제2 테이프를 부착할 수 있다.In addition, before cutting the conductive member and the substrate, a second tape may be attached to the lower surface of the substrate.

상기 과제를 해결하기 위한 본 발명의 일 실시예에 따른 EMS 안테나 모듈을 포함하는 반도체 패키지는, 상부 면에 안테나 패턴이 형성되고 상기 안테나 패턴과 접속된 비아홀을 포함하는 기판, 상기 기판의 상부에 마련되는 제1 봉지재 및 상기 기판과 상기 제1 봉지재를 둘러싸도록 위치하여 상기 안테나 패턴의 신호 방사각도를 조절하는 방사각 조절부를 포함하는 EMS 안테나 모듈; 반도체 칩; 상기 EMS 안테나 모듈과 상기 반도체 칩을 일체화하도록 몰딩하는 제2 봉지재; 상기 EMS 안테나 모듈과 상기 반도체 칩의 하부에 마련되어 상기 EMS 안테나 모듈 및 상기 반도체 칩과 전기적으로 연결되는 배선부; 및 상기 배선부와 전기적으로 연결되는 외부 연결단자;를 포함할 수 있다.The semiconductor package including the EMS antenna module according to an embodiment of the present invention for solving the above problem is, a substrate having an antenna pattern formed on the upper surface and connected to the antenna pattern, provided on the substrate An EMS antenna module including a first encapsulation material and a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material to adjust a signal radiation angle of the antenna pattern; Semiconductor chips; A second encapsulant molding the EMS antenna module and the semiconductor chip to be integrated; A wiring unit provided below the EMS antenna module and the semiconductor chip and electrically connected to the EMS antenna module and the semiconductor chip; And an external connection terminal electrically connected to the wiring unit.

또한, 상기 배선부는 상기 반도체 칩의 신호 패드와 상기 EMS 안테나 모듈의 비아홀을 노출하는 제1 절연층과, 상기 신호 패드 및 상기 비아홀과 전기적으로 연결되는 재배선층과, 상기 재배선층을 절연하는 제2 절연층과, 상기 재배선층과 전기적으로 연결되는 범프 금속층을 포함할 수 있다.The wiring unit may include a first insulating layer exposing the signal pad of the semiconductor chip and a via hole of the EMS antenna module, a redistribution layer electrically connected to the signal pad and the via hole, and a second insulating layer. It may include an insulating layer and a bump metal layer electrically connected to the redistribution layer.

또한, 상기 제2 봉지재는 상기 제1 봉지재와 동일한 재료일 수 있다.In addition, the second encapsulation material may be the same material as the first encapsulation material.

또한, 상기 방사각 조절부는 상기 기판의 하부로 연장되어 상기 배선부와 접속될 수 있다.In addition, the radiation angle control unit may extend below the substrate and be connected to the wiring unit.

또한, 상기 방사각 조절부는 상기 안테나 패턴의 신호 방사각도가 작아지도록 내측면이 경사지게 마련될 수 있다.In addition, the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.

본 발명의 실시예에 따른 EMS 안테나 모듈 및 이를 포함하는 반도체 패키지는 최적의 방사각도를 조절하여 안테나 신호의 전송속도를 향상시킬 수 있다.EMS antenna module and a semiconductor package including the same according to an embodiment of the present invention can improve the transmission speed of the antenna signal by adjusting the optimal radiation angle.

또한, 방사각 조절부가 그라운드에 접지되도록 함으로써, 측면으로 방사되는 신호를 흡수하여 노이즈를 감소시킬 수 있다.In addition, by allowing the radiation angle control unit to be grounded, it is possible to reduce the noise by absorbing the signal emitted to the side.

또한, 안테나가 내장된 와이어 본딩 PCB 기판이 아닌 EMS 안테나 모듈을 사용하여 전체 패키지 두께 감소 및 전기적 신호전달 속도를 향상시킬 수 있다.In addition, the use of an EMS antenna module, rather than a wire bonded PCB board with built-in antennas, can reduce overall package thickness and improve electrical signaling rates.

또한, 패키지 내부에 EMS 안테나 모듈을 내장하여 산화 및 손상으로부터 보호할 수 있다.In addition, an EMS antenna module is built into the package to protect it from oxidation and damage.

도 1은 본 발명의 일 실시예에 따른 EMS 안테나 모듈을 설명하기 위한 단면도이다.1 is a cross-sectional view illustrating an EMS antenna module according to an embodiment of the present invention.

도 2 내지 9는 도 1의 EMS 안테나 모듈을 제조하는 방법을 설명하기 위한 단면도들이다.2 to 9 are cross-sectional views illustrating a method of manufacturing the EMS antenna module of FIG. 1.

도 10은 종래의 안테나가 내장된 와이어 본딩 반도체 패키지를 설명하기 위한 단면도이다.10 is a cross-sectional view illustrating a wire bonded semiconductor package in which a conventional antenna is incorporated.

도 11은 도 1의 EMS 안테나 모듈을 포함하는 반도체 패키지를 설명하기 위한 단면도이다.11 is a cross-sectional view for describing a semiconductor package including the EMS antenna module of FIG. 1.

도 12 내지 18은 도 11의 반도체 패키지를 제조하는 방법을 설명하기 위한 단면도들이다.12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package of FIG. 11.

도 19는 본 발명의 일 실시예에 따른 반도체 패키지를 설명하기 위한 단면도이다.19 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.

도 20은 본 발명의 일 실시예에 따른 반도체 패키지를 설명하기 위한 단면도이다.20 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.

이하에서는 본 발명의 실시예들을 첨부 도면을 참조하여 상세히 설명한다. 아래에서 소개하는 실시예들은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 본 발명의 사상을 충분히 전달하기 위해 제시하는 것일 뿐, 본 발명이 제시하는 실시예만으로 한정되는 것은 아니다. 본 발명은 다른 실시형태로도 구체화될 수 있다. 본 발명을 명확하게 설명하기 위하여 설명과 관계없는 부분은 도면에서 생략하였으며, 도면들에 있어서 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수 있다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다. 또한, 이하 사용되는 용어 중 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments introduced below are only presented to sufficiently convey the spirit of the present invention to those skilled in the art, and are not limited to the embodiments presented by the present invention. The invention can also be embodied in other embodiments. Parts not related to the description are omitted in the drawings in order to clearly describe the present invention, the width, length, thickness, etc. of the components in the drawings may be exaggerated for convenience. Like numbers refer to like elements throughout. In addition, the term “and / or” as used below includes any one and all combinations of one or more of the listed items.

도 1은 본 발명의 일 실시예에 따른 EMS 안테나 모듈(100)을 설명하기 위한 단면도이다.1 is a cross-sectional view illustrating an EMS antenna module 100 according to an embodiment of the present invention.

도 1을 참조하면, 본 발명의 일 실시예에 따른 EMS 안테나 모듈(100)은 안테나 패턴(113)이 형성된 기판(110), 제1 봉지재(120) 및 방사각 조절부(130)를 포함한다.Referring to FIG. 1, an EMS antenna module 100 according to an embodiment of the present invention includes a substrate 110 on which an antenna pattern 113 is formed, a first encapsulant 120, and a radiation angle adjusting unit 130. do.

기판(110)은 기판(110)을 수직으로 관통하는 비아홀(114)을 포함하는 비아 프레임(via frame)일 수 있다. 일 예로 기판(110)은 안테나 패턴(113)이 형성되는 인쇄회로기판(PCB)이거나, 또는 절연 프레임(Insulation Substrate)일 수 있다. 절연 프레임은 절연 물질을 포함할 수 있다. 예를 들어, 실리콘(silicon), 글래스(glass), 세라믹(ceramic), 플라스틱(plastic) 또는 폴리머(polymer)를 포함할 수 있다. The substrate 110 may be a via frame including a via hole 114 that vertically penetrates the substrate 110. For example, the substrate 110 may be a printed circuit board (PCB) on which the antenna pattern 113 is formed, or may be an insulation frame. The insulating frame may comprise an insulating material. For example, it may include silicon, glass, ceramic, plastic, or polymer.

기판(110)의 상부 면(111)에는 안테나 패턴(113)이 마련될 수 있다. 안테나 패턴(113)은 기판(110)의 상부 면(111)을 따라 연장되며 패턴을 형성할 수 있다. 안테나 패턴(113)은 도전물일 수 있고, 예를 들어 금속을 포함할 수 있고, 구리(Cu), 알루미늄(Al), 은(Ag) 또는 이들의 합금을 포함할 수 있다.An antenna pattern 113 may be provided on the upper surface 111 of the substrate 110. The antenna pattern 113 may extend along the upper surface 111 of the substrate 110 to form a pattern. The antenna pattern 113 may be a conductive material, for example, may include a metal, and may include copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof.

안테나 패턴(113)은 증착, 도금 등 다양한 방법을 이용하여 형성될 수 있다. 일 예로, 안테나 패턴(113)은 LDS(Laser Direct Structuring) 방식으로 기판(110)의 상부 면(111)에 형성될 수 있다. LDS 방식은 사출 등에 의해 형성되는 열가소성 수지의 표면 상에 레이저를 이용하여 패턴 가공을 행한 후에, 도금 공정을 통해 금속 패턴을 형성하는 것을 말한다. 레이저 가공을 통해 가공된 수지 표면은 거친 표면을 가질 수 있어, 앵커링 효과(anchoring effect)에 의해 도금 금속의 부착력이 증가할 수 있다. 안테나 패턴(113)은 상기 방식 이외에도 다양한 방식으로 형성될 수 있다.The antenna pattern 113 may be formed using various methods such as deposition and plating. For example, the antenna pattern 113 may be formed on the upper surface 111 of the substrate 110 by a laser direct structuring (LDS) method. The LDS method refers to forming a metal pattern through a plating process after performing a pattern processing using a laser on the surface of the thermoplastic resin formed by injection or the like. The resin surface processed through laser processing may have a rough surface, so that the adhesion of the plated metal may increase due to the anchoring effect. The antenna pattern 113 may be formed in various ways in addition to the above method.

비아홀(114)은 안테나 패턴(113)이 형성되는 기판(110)의 상부 면(111)과 기판(110)의 하부 면(112)을 관통하도록 형성될 수 있다. 비아홀(114)은 도전물로 충전될 수 있고, 상기 도전물은 금속을 포함할 수 있고, 예를 들어 구리(Cu), 알루미늄(Al), 은(Ag) 또는 이들의 합금을 포함할 수 있다. 비아홀(114)에 충전되는 도전물과 안테나 패턴(113)은 동일한 도전물일 수 있고, 안테나 패턴(113)의 일 단과 연결될 수 있다. 따라서 안테나 패턴(113)은 비아홀(114)을 통해 기판의 하부 면(112)과 연결될 수 있다.The via hole 114 may be formed to penetrate the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 of the substrate 110. The via hole 114 may be filled with a conductive material, and the conductive material may include a metal, and may include, for example, copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof. . The conductive material and the antenna pattern 113 filled in the via hole 114 may be the same conductive material and may be connected to one end of the antenna pattern 113. Therefore, the antenna pattern 113 may be connected to the lower surface 112 of the substrate through the via hole 114.

기판(110)의 하부 면(112)에는 비아홀(114)에 충전된 도전물이 하부 면(112)을 따라 연장된 접속 연장부(115)가 형성될 수 있다. 접속 연장부(115)는 비아홀(114)의 면적보다 넓은 면적을 가지도록 마련되어, EMS 안테나 모듈(100)이 실장되는 패키지의 배선부와의 접속 신뢰성을 향상시킬 수 있다.A connection extension 115 extending from the lower surface 112 of the substrate 110 along the lower surface 112 of the conductive material filled in the via hole 114 may be formed. The connection extension part 115 may be provided to have an area larger than that of the via hole 114, thereby improving connection reliability with the wiring part of the package in which the EMS antenna module 100 is mounted.

도면에 나타난 바와 같이, 안테나 패턴(113)과 접속 연장부(115)는 비아홀(114)과 일체로 형성될 수 있다. 또는, 도면과 달리 접속 연장부(115)는 비아홀(114)의 일 단에 부착되는 패드(pad) 형상일 수 있다.As shown in the figure, the antenna pattern 113 and the connection extension 115 may be integrally formed with the via hole 114. Alternatively, unlike the drawing, the connection extension 115 may have a pad shape attached to one end of the via hole 114.

기판(110)은 상부 면(111)과 하부 면(112) 상에 보호층(116)을 더 포함할 수 있다. 보호층(116)은 안테나 패턴(113)이 형성된 기판(110)의 상부 면(111)과 접속 연장부(115)가 형성된 하부 면(112)을 덮도록 형성되어, 안테나 패턴(113) 및 접속 연장부(115)를 보호하는 역할을 할 수 있다.The substrate 110 may further include a protective layer 116 on the upper surface 111 and the lower surface 112. The protective layer 116 is formed to cover the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 on which the connection extension 115 is formed, thereby forming the antenna pattern 113 and the connection. It may serve to protect the extension 115.

예를 들어, 기판(110)이 인쇄회로기판인 경우, 보호층(116)은 솔더 레지스트(Solder Resist)일 수 있다. 솔더 레지스트는 인쇄회로기판에 도포하는 기능성 코팅재로서, 기판의 표면회로를 마스킹 및 보호하고, 솔더링 시 땜납 걸침(solder bridge)을 방지할 수 있다. 솔더 레지스트는 PSR(Photo Solder Resist), LPI(Liquid Photo Imaging) 등의 포토 공정 또는 IR(Infra Red) 공정에 의해 형성될 수 있다.For example, when the substrate 110 is a printed circuit board, the protective layer 116 may be a solder resist. Solder resist is a functional coating material to be applied to a printed circuit board, masking and protecting the surface circuit of the substrate, it is possible to prevent solder bridge during soldering (solder bridge). The solder resist may be formed by a photo process such as PSR (Photo Solder Resist), LPI (Liquid Photo Imaging), or an Infra Red (IR) process.

제1 봉지재(120)는 상기 기판(110)의 상부 면(111) 상에 형성될 수 있다. 제1 봉지재(120)는 절연 물질을 포함할 수 있고, 예를 들어 에폭시 몰딩 컴파운드(epoxy molding compound, EMC), 엔캡슐런트(encapsulant), PPG(prepreg) 또는 PI(polyimide)를 포함할 수 있다. 제1 봉지재(120)는 기판(110)의 상부를 덮도록 마련되어 상부 면(111)에 형성된 안테나 패턴(113)을 외부 충격으로부터 보호할 수 있다.The first encapsulant 120 may be formed on the upper surface 111 of the substrate 110. The first encapsulant 120 may include an insulating material, and may include, for example, an epoxy molding compound (EMC), an encapsulant, a prepreg (PPG), or a polyimide (PI). have. The first encapsulation member 120 may cover the upper portion of the substrate 110 to protect the antenna pattern 113 formed on the upper surface 111 from external impact.

방사각 조절부(130)는 상기 기판(110)과 상기 제1 봉지재(120)를 둘러싸되 안테나 패턴(113)과 접속되지 않고 이격되어 위치할 수 있다.The radiation angle controller 130 may surround the substrate 110 and the first encapsulant 120 and be spaced apart from each other without being connected to the antenna pattern 113.

도 1을 참조하여 단면도의 관점에서 설명하면, 방사각 조절부(130)는 안테나 패턴(113)과 이격하도록 EMS 안테나 모듈(100)의 양 측면에 형성되어 안테나의 신호 방사각도(A)를 조절하도록 위치할 수 있다. 또한, 단면도를 측면에서 바라보았을 때, 방사각 조절부(130)는 상하 방향으로의 사각형 형상이거나 삼각형 형상일 수 있다. 도면에는 직사각형 형상을 도시하였으나, 위의 형성들 외에도 다양한 형상으로 마련될 수 있음은 물론이다.Referring to the cross-sectional view with reference to Figure 1, the radiation angle adjusting unit 130 is formed on both sides of the EMS antenna module 100 to be spaced apart from the antenna pattern 113 to adjust the signal radiation angle (A) of the antenna It can be located to. In addition, when the cross-sectional view is viewed from the side, the radial angle adjustment unit 130 may be a rectangular shape or a triangular shape in the vertical direction. Although illustrated in the drawings a rectangular shape, in addition to the above formation may be provided in a variety of shapes, of course.

방사각 조절부(130)은 금속을 포함할 수 있고, 예를 들어 구리(Cu), 금(Au), 은(Ag), 티타늄(Ti) 또는 이들의 합금을 포함할 수 있다. 한편, 방사각 조절부(130)는 무전해 도금, 전해 도금, 스퍼터링 또는 프린팅 등의 공정에 의해 형성될 수 있다.Radiation angle control unit 130 may include a metal, for example, may include copper (Cu), gold (Au), silver (Ag), titanium (Ti) or alloys thereof. On the other hand, the radiation angle control unit 130 may be formed by a process such as electroless plating, electrolytic plating, sputtering or printing.

방사각 조절부(130)의 상부 면은 상기 제1 봉지재(120)의 상부 면과 동일평면일 수 있다. 이는 제1 봉지재(120)의 두께만큼 방사각 조절부(130)의 높이를 형성하여 안테나 패턴(113)의 신호 방사각도(A)를 조절하기 위함이다. 또한, 방사각 조절부(130)의 하부 면은 EMS 안테나 모듈(100)의 안테나 패턴(113)이 형성되는 높이와 동일하거나 낮을 수 있다. 즉, 방사각 조절부(130)의 하부 면은 제1 봉지재(120)와 기판(110)의 경계면 또는 제1 봉지재(120) 아래의 기판(110)의 코어층(미도시)에 위치할 수 있다. 이는 안테나 패턴(113)의 신호가 측면으로 방사되는 것을 방지하여 함께 실장되는 다른 소자(미도시)에 영향을 미치지 않게 하기 위함이다.The upper surface of the radiation angle adjusting unit 130 may be coplanar with the upper surface of the first encapsulant 120. This is to adjust the signal radiation angle A of the antenna pattern 113 by forming the height of the radiation angle adjusting unit 130 by the thickness of the first encapsulant 120. In addition, the lower surface of the radiation angle adjusting unit 130 may be equal to or lower than the height at which the antenna pattern 113 of the EMS antenna module 100 is formed. That is, the lower surface of the radiation angle adjusting unit 130 is located at the interface between the first encapsulant 120 and the substrate 110 or at a core layer (not shown) of the substrate 110 under the first encapsulant 120. can do. This is to prevent the signal of the antenna pattern 113 from being radiated laterally so as not to affect other elements (not shown) mounted together.

한편, 방사각 조절부(130)의 하부 면은 기판(110)의 하부 면과 동일평면일 수 있다(도 19 참조). 방사각 조절부(130)의 상하 길이를 EMS 안테나 모듈(100)의 높이와 동일하게 형성하여 그라운드에 접지하도록 함으로써, 측면으로 방사되는 신호를 흡수하여 크로스토크(crosstalk) 등의 간섭 현상을 방지할 수 있다. 패키지 제조 시 방사각 조절부(130)의 하부 면은 배선부와 연결될 수 있다.Meanwhile, the bottom surface of the radiation angle controller 130 may be coplanar with the bottom surface of the substrate 110 (see FIG. 19). By forming the upper and lower lengths of the radiation angle adjusting unit 130 to be the same as the height of the EMS antenna module 100 to ground to the ground, by absorbing the signal radiated to the side to prevent interference such as crosstalk (crosstalk) Can be. When manufacturing the package, the lower surface of the radiation angle control unit 130 may be connected to the wiring unit.

또한, 방사각 조절부(130)는 안테나 패턴(113)의 신호 방사각도(A)가 작아지도록 경사지게 마련될 수 있다(도 20 참조). 예를 들어, 방사각 조절부(130)는 윗변이 아랫변보다 긴 역사다리꼴 형상이거나, 밑변을 위로, 꼭지점을 아래로 하는 역삼각형 형상일 수 있다. 도 20에는 역사다리꼴 형상을 나타내었으나 이에 한정되는 것은 아니며, 안테나의 신호 방사각도(A)가 작아질 수 있는 형상이라면 어떠한 형상이라도 본 발명의 기술적 사상에 포함된다. 안테나의 신호 방사각도(A)를 작게 함으로써 신호를 집중시킬 수 있으며, 이에 따라 신호 전송속도를 향상시킬 수 있다.In addition, the radiation angle adjusting unit 130 may be provided to be inclined so that the signal radiation angle A of the antenna pattern 113 is reduced (see FIG. 20). For example, the radial angle control unit 130 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down. 20 illustrates an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced. By reducing the signal emission angle A of the antenna, the signal can be concentrated, and thus the signal transmission speed can be improved.

도 2 내지 도 9는 본 발명의 일 실시예에 따른 도 1의 EMS 안테나 모듈(100)을 제조하는 방법을 공정 단계에 따라 설명하기 위한 단면도들이다.2 to 9 are cross-sectional views for explaining a method of manufacturing the EMS antenna module 100 of FIG. 1 according to an embodiment of the present invention according to the process steps.

도 2는 제1 캐리어(140)에 기판(110)을 부착하는 공정을 도시한다.2 illustrates a process of attaching the substrate 110 to the first carrier 140.

도 2를 참조하면, 비아홀(114)과 연결된 안테나 패턴(113)을 포함하는 단위 기판(110)이 연속적으로 마련된 스트립(strip) 기판(110a)을 준비하고, 상기 스트립 기판(110a)을 제1 캐리어(140) 상에 배치한다. 스트립 기판(110a)은 제1 접착층(141)에 의해 제1 캐리어(140)에 고정될 수 있다. 이 때, 스트립 기판(110a)은 안테나 패턴(113)이 위를 향하도록 제1 캐리어(140) 상에 배치된다.Referring to FIG. 2, a strip substrate 110a in which a unit substrate 110 including an antenna pattern 113 connected to a via hole 114 is continuously provided is prepared, and the strip substrate 110a is formed as a first substrate. It is disposed on the carrier 140. The strip substrate 110a may be fixed to the first carrier 140 by the first adhesive layer 141. In this case, the strip substrate 110a is disposed on the first carrier 140 so that the antenna pattern 113 faces upward.

도면에는 2개의 단위 기판(110)이 연결된 스트립 기판(110a)를 도시하고 있으나, 이와 달리 3개 이상의 단위 기판(110)이 연결된 스트립 기판을 사용하는 것을 포함하여 한 번의 공정으로 다수의 EMS 안테나 모듈(100)을 제조할 수 있다.Although the drawing shows a strip substrate 110a to which two unit substrates 110 are connected, a plurality of EMS antenna modules are processed in one process, including using a strip substrate to which three or more unit substrates 110 are connected. 100 can be manufactured.

제1 캐리어(140)는 스트립 기판(110a)을 지지하기 위한 것으로 강성이 상당하고 열변형이 적은 재질로 마련될 수 있다. 제1 캐리어(140)는 고형의 재료(rigid type)일 수 있으며, 실리콘(silicon), 유리(glass), 세라믹(ceramic), 플라스틱(plastic), 또는 폴리머(polymer)를 포함할 수 있고, 예를 들어 몰드 성형물 내지 폴리이미드 테이프(polyimide tape) 등을 사용할 수 있다.The first carrier 140 may support the strip substrate 110a and may be formed of a material having considerable rigidity and low thermal deformation. The first carrier 140 may be of a solid type and may include silicon, glass, ceramic, plastic, or polymer, for example For example, a molded article or a polyimide tape may be used.

제1 접착층(141)은 양면 접착필름을 사용할 수 있으며, 일 면에 제1 캐리어(140) 상에 부착되어 고정되고 타 면에 상기 스트립 기판(110a)이 부착될 수 있다.The first adhesive layer 141 may use a double-sided adhesive film. The first adhesive layer 141 may be attached to and fixed on the first carrier 140 on one surface thereof, and the strip substrate 110a may be attached to the other surface.

도 3은 제1 봉지재(120)를 몰딩하는 공정을 도시한다.3 illustrates a process of molding the first encapsulant 120.

도 3을 참조하면, 제1 봉지재(120)는 제1 캐리어(140)와 상부 금형(미도시) 사이에 유동성이 있는 상태로 주입되어 제1 캐리어(140) 상에 제공될 수 있으며, 상부 금형에 의해 고온 상태에서 압착되어 경화될 수 있다. 제1 봉지재(120)는 스트립 기판(110a)의 상부를 덮고 측면을 둘러싸도록 주입되어, 시간의 경과에 따라 경화되어 일체화된다.Referring to FIG. 3, the first encapsulant 120 may be injected into a fluid state between the first carrier 140 and an upper mold (not shown) and provided on the first carrier 140. The mold may be pressed and hardened in a high temperature state. The first encapsulation material 120 is injected to cover the upper side of the strip substrate 110a and surround the side surface, and is cured and integrated with time.

제1 봉지재(120)를 밀봉하는 방법으로 제1 봉지재(120)가 유동성 있는 상태로 주입되는 것을 설명하였지만, 이와 달리 도포되거나 인쇄되는 등의 방법을 사용할 수 있다. 또한, 봉지재의 몰딩 방법으로 관련 기술분야에서 통상적으로 사용되는 다양한 기술들이 사용될 수 있다.Although the first encapsulant 120 has been described as being injected in a fluid state as a method of sealing the first encapsulant 120, a method such as being coated or printed may be used. In addition, various techniques conventionally used in the art may be used as a molding method of the encapsulant.

한편, 도면에 도시하지 않았으나, 스트립 기판(110a) 상부에 제1 봉지재(120)가 두껍게 몰딩된 경우 이를 그라인딩하여 제1 봉지재(120)의 두께를 조절하는 공정이 추가될 수 있다. 제1 봉지재(120)의 두께는 상술한 방사각 조절부(130)의 높이와 관련되므로, 신호 방사각도(A) 설계에 따라 적절한 높이로 형성될 수 있다.On the other hand, although not shown in the drawings, when the first encapsulant 120 is thickly molded on the strip substrate 110a, a process of adjusting the thickness of the first encapsulant 120 may be added by grinding it. Since the thickness of the first encapsulant 120 is related to the height of the above-described radiation angle adjusting unit 130, it may be formed at an appropriate height according to the design of the signal radiation angle A. FIG.

도 4는 제1 캐리어(140)를 제거하고, 제1 테이프(150a)를 부착하는 공정을 도시한다.4 illustrates a process of removing the first carrier 140 and attaching the first tape 150a.

도 4를 참조하면, 스트립 기판(110a)을 지지하고 있던 제1 캐리어(140)를 제거할 수 있다. 그리고 제1 캐리어(140)가 제거된 면에 제1 테이프(150a)를 부착할 수 있다. Referring to FIG. 4, the first carrier 140 supporting the strip substrate 110a may be removed. In addition, the first tape 150a may be attached to a surface from which the first carrier 140 is removed.

제1 테이프(150a)는 소잉(Sawing) 공정 시 웨이퍼, 칩 등이 장비로부터 떨어지지 않게 하기 위해 프레임에 접착시키는 역할을 한다. 본 발명에서는 포일 마운트(Foil Mount) 공정에서 제1 봉지재(120)로 일체화된 스트립 기판(110a)을 소잉 장비에 부착하기 위해 제1 테이프(150a)가 사용될 수 있다.The first tape 150a adheres to the frame in order to prevent the wafer, the chip, and the like from falling from the equipment during the sawing process. In the present invention, the first tape 150a may be used to attach the strip substrate 110a integrated with the first encapsulant 120 to the sawing equipment in a foil mount process.

일 예로, 제1 테이프(150a)는 UV 테이프일 수 있다. UV 테이프는 소재에 부착하여 UV 조사 전에는 높은 접착력으로 소재를 단단히 고정하고, UV 조사 후에는 경화로 인하여 접착력이 감소하여 소재의 표면에 오염 또는 손상없이 쉽게 박리된다. For example, the first tape 150a may be a UV tape. The UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.

또는 제1 테이프(150a)는 스트립 기판(110a)을 고정할 수 있는 테이프라면 어떤 것이든 사용될 수 있다. 일 예로, 양면 접착필름일 수 있다.Alternatively, the first tape 150a may be used as long as the tape can fix the strip substrate 110a. For example, it may be a double-sided adhesive film.

도 5는 요홈(160)을 형성하는 공정을 도시한다.5 shows a process for forming the recess 160.

도 5를 참조하면, 스트립 기판(110a)와 일체화된 제1 봉지재(120)의 상부 면으로부터 요입되는 요홈(160)을 형성할 수 있다. 요홈(160)은 제1 봉지재(120)와 일체화된 스트립 기판(110a)을 제1 테이프(150a) 상에 마운팅하여 고정시킨 후, 깊이(depth)를 다르게 하여 소잉하는 하프소잉(Half Sawing)을 통해 형성할 수 있다. 하프소잉은 블레이드, 레이저 유닛 또는 이의 등가물을 이용하여 수행할 수 있으며, 블레이드의 경우 대상에 따라 재질을 다르게 사용할 수 있다. 일 예로, 다이아몬드 블레이드를 사용할 수 있다.Referring to FIG. 5, a recess 160 recessed from an upper surface of the first encapsulant 120 integrated with the strip substrate 110a may be formed. The recess 160 fixes the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and fixes the strip substrate 110a. It can be formed through. Half-sawing may be performed using a blade, a laser unit, or an equivalent thereof, and in the case of a blade, materials may be used differently depending on a target. As an example, a diamond blade may be used.

요홈(160)은 안테나 패턴(113)이 마련된 영역을 둘러싸되, 안테나 패턴(113)과 이격되도록 형성될 수 있다. 예를 들어, 요홈(160)은 위에서 바라보았을 때, 안테나 패턴(113)이 마련된 영역을 포위하되, 상기 영역의 경계와 떨어져 형성될 수 있다. 또한, 요홈(160)은 안테나 패턴(113)이 마련된 높이보다 깊게 형성될 수 있다.The recess 160 may surround a region where the antenna pattern 113 is provided and be spaced apart from the antenna pattern 113. For example, when viewed from above, the recess 160 may surround a region where the antenna pattern 113 is provided, but may be formed to be separated from the boundary of the region. In addition, the recess 160 may be formed deeper than the height at which the antenna pattern 113 is provided.

도면에는 사각형 형상의 요홈(160)을 도시하였으나, 상술한 바와 같이 안테나의 신호 방사각도(A) 조절을 위해 방사각 조절부(130)의 형상을 다양하게 설계할 수 있으므로, 요홈(160)의 형상 또한 다양하게 마련될 수 있다. 예를 들어, 윗변이 아랫변보다 긴 역사다리꼴 형상이거나, 밑변을 위로, 꼭지점을 아래로 하는 역삼각형 형상일 수 있다.Although the groove 160 having a rectangular shape is illustrated in the drawing, the shape of the radiation angle adjusting unit 130 may be variously designed to adjust the signal radiation angle A of the antenna as described above. The shape may also be provided in various ways. For example, the upper side may have an inverted trapezoidal shape longer than the lower side, or an inverted triangle shape having the lower side up and the vertex down.

도 6은 제1 테이프(150a)를 제거하는 공정을 도시한다.6 shows a process of removing the first tape 150a.

요홈(160)을 형성한 후, 스트립 기판(110a)의 픽업(pick up)이 용이하도록 제1 스트립 기판(110a)의 하부 면에 남아있는 제1 테이프(150a)를 제거할 수 있다. After the recess 160 is formed, the first tape 150a remaining on the lower surface of the first strip substrate 110a may be removed to facilitate pick-up of the strip substrate 110a.

예를 들어, 상술한 바와 같이 제1 테이프(150a)가 UV 테이프인 경우 UV를 조사하여 경화시킴으로써 오염 또는 손상없이 박리할 수 있다. 이를 위해 UV 조사가 수행될 수 있다.For example, as described above, when the first tape 150a is a UV tape, the first tape 150a may be peeled without contamination or damage by irradiating and curing UV. UV radiation can be performed for this purpose.

도 7은 요홈(160)에 도전 부재(161)를 충전하는 공정을 도시한다.7 illustrates a process of filling the recess 160 with the conductive member 161.

도전 부재(161)는 요홈(160)의 형상에 따라 충전되며, 도면에서는 사각형 형상의 요홈(160)에 충전된 도전 부재(161)를 나타내었다. 또한, 도전 부재(161)는 제1 봉지재(120)의 상부 면과 동일평면을 형성하도록 충전될 수 있다. 충전된 도전 부재(161)의 상부 면과 제1 봉지재(120)의 상부 면이 동일평면이 아닐 경우, 추가적으로 이를 그라인딩하여 동일평면을 형성하는 공정을 수행할 수 있다.The conductive member 161 is filled according to the shape of the groove 160, and the drawing illustrates the conductive member 161 filled in the rectangular groove 160. In addition, the conductive member 161 may be filled to form the same plane as the upper surface of the first encapsulant 120. If the upper surface of the filled conductive member 161 and the upper surface of the first encapsulant 120 is not the same plane, it may be further performed by grinding them to form the same plane.

도전 부재(161)는 후술할 소잉(Sawing) 공정 후 EMS 안테나 모듈(100)의 방사각 조절부(130)가 되므로, 도전 부재(161)는 금속을 포함할 수 있다. 예를 들어 구리(Cu), 금(Au), 은(Ag), 티타늄(Ti) 또는 이들의 합금을 포함할 수 있다. Since the conductive member 161 becomes the radiation angle adjusting unit 130 of the EMS antenna module 100 after the sawing process to be described later, the conductive member 161 may include a metal. For example, copper (Cu), gold (Au), silver (Ag), titanium (Ti) or an alloy thereof may be included.

한편, 도전 부재(161)는 무전해 도금, 전해 도금, 스퍼터링 또는 프린팅 등의 방법에 의해 형성될 수 있다.On the other hand, the conductive member 161 may be formed by a method such as electroless plating, electrolytic plating, sputtering or printing.

도 8은 제2 테이프(150b)를 부착하는 공정을 도시한다.8 shows a process of attaching the second tape 150b.

각각의 단위 EMS 안테나 모듈(100)로 절삭하기 위해 스트립 기판(110a)이 고정될 필요가 있다. 이를 위해 스트립 기판(110a)의 하부 면에 제2 테이프(150b)가 부착될 수 있다.The strip substrate 110a needs to be fixed in order to cut into each unit EMS antenna module 100. For this purpose, the second tape 150b may be attached to the lower surface of the strip substrate 110a.

제2 테이프(150b)는 제1 테이프(150a)와 동일한 재질일 수 있다. 즉, 제2 테이프(150b)는 UV 테이프일 수 있다. UV 테이프는 소재에 부착하여 UV 조사 전에는 높은 접착력으로 소재를 단단히 고정하고, UV 조사 후에는 경화로 인하여 접착력이 감소하여 소재의 표면에 오염 또는 손상없이 쉽게 박리된다.The second tape 150b may be made of the same material as the first tape 150a. That is, the second tape 150b may be a UV tape. The UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.

또는, 제2 테이프(150b)는 제1 테이프(150a)와 다른 재질일 수 있으며, 소잉(Sawing) 공정 시 스트립 기판(110a)을 고정할 수 있는 테이프라면 어떤 것이든 사용될 수 있다. 일 예로, 양면 접착필름일 수 있다.Alternatively, the second tape 150b may be made of a different material from that of the first tape 150a, and any tape may be used as long as the tape may fix the strip substrate 110a during the sawing process. For example, it may be a double-sided adhesive film.

도 9는 스트립 기판(110a)를 절삭하는 소잉(Sawing) 공정을 도시한다.9 shows a sawing process of cutting the strip substrate 110a.

소잉 공정에서는 제2 테이프(150b)를 부착하여 고정시킨 스트립 기판(110a)을 절삭하여 각각의 단위 EMS 안테나 모듈(100)로 분리할 수 있다. 요홈(160)에 충전된 도전 부재(161)는 절삭된 후, 단위 EMS 안테나 모듈(100)의 안테나 패턴(113)을 둘러싸도록 위치하여 신호 방사각도(A)를 조절하는 방사각 조절부(130)가 된다.In the sawing process, the strip substrate 110a fixed by attaching and fixing the second tape 150b may be cut and separated into each unit EMS antenna module 100. After the conductive member 161 filled in the groove 160 is cut, the conductive member 161 is positioned to surround the antenna pattern 113 of the unit EMS antenna module 100 to adjust the signal radiation angle (A). )

소잉 공정은 도전 부재(161)의 상부 면과 수직 방향으로 도전 부재(161)의 상부 면으로부터 제2 테이프(150b)가 부착된 스트립 기판(110a)의 하부 면까지 절삭할 수 있다. 절삭은 다이아몬드 블레이드, 레이저 유닛 또는 이의 등가물을 이용하여 수행할 수 있다.The sawing process may cut from the upper surface of the conductive member 161 to the lower surface of the strip substrate 110a to which the second tape 150b is attached in a direction perpendicular to the upper surface of the conductive member 161. Cutting may be performed using a diamond blade, laser unit or equivalent thereof.

도면에서는 2개의 단위 기판(110)이 연속적으로 마련된 스트립 기판(110a)을 예시적으로 도시하고 있다. 도 8 및 도 9를 참조하면, 2개의 단위 기판(110) 사이에 위치하는 도전 부재(161)는 1회 또는 2회 이상의 절삭이 수행될 수 있다. 도전 부재(161)를 절삭하여 형성되는 방사각 조절부(130)의 폭을 좁게 형성하기 위해서는 2회 이상의 절삭이 필요할 수 있다. 한편, 스트립 기판(110a)의 양 끝단에 위치하는 도전 부재(161)는 1회의 절삭으로 충분할 수 있다. 스트립 기판(110a)의 측면을 밀봉하고 있는 제1 봉지재(120)가 제거되도록 절삭할 수 있고, 또는 제1 봉지재(120)가 절삭 후 잔존하도록 절삭할 수도 있다. 도면에서는 제1 봉지재(120)가 제거되도록 절삭한 단위 EMS 안테나 모듈(100)을 도시하였다.In the drawing, a strip substrate 110a in which two unit substrates 110 are continuously provided is illustrated. 8 and 9, the conductive member 161 positioned between the two unit substrates 110 may be cut once or twice or more. Two or more cuttings may be required to form a narrow width of the radial angle adjusting unit 130 formed by cutting the conductive member 161. On the other hand, the conductive member 161 located at both ends of the strip substrate 110a may be sufficient for one cutting. The first encapsulant 120 sealing the side surface of the strip substrate 110a may be cut to be removed, or the first encapsulant 120 may be cut to remain after cutting. In the drawing, the unit EMS antenna module 100 cut to remove the first encapsulant 120 is illustrated.

다음으로, EMS 안테나 모듈(100)을 포함하는 반도체 패키지(1000) 및 그 제조방법에 대해 설명하기로 한다.Next, the semiconductor package 1000 including the EMS antenna module 100 and a manufacturing method thereof will be described.

도 10은 종래의 안테나가 내장된 와이어 본딩 팬-아웃 반도체 패키지를 설명하기 위한 단면도이다.10 is a cross-sectional view illustrating a wire bonding fan-out semiconductor package in which a conventional antenna is incorporated.

도 10을 참조하면, 안테나 패턴(101)이 내장된 인쇄회로기판(401) 상에 반도체 칩(201)이 부착되고, 와이어(102) 본딩을 통하여 인쇄회로기판(401)과 전기적으로 연결되는 구조를 갖는다. 이러한 종래의 패키지 구조는 외부 기기 등으로부터 안테나의 신호 전달에 전자파 간섭을 받을 수 있으며, 안테나의 신호 방사각도를 조절하지 못하여 신호 집중도가 떨어져 빠른 전송 속도를 기대하기 어렵다. 또한, 와이어(102) 본딩 및 인쇄회로기판(401)으로 인한 최종 패키지 두께가 두꺼워질 뿐만 아니라, 와이어(102)의 루프 길이가 길어짐에 따른 전기적 성능이 저하되는 단점이 있다.Referring to FIG. 10, a semiconductor chip 201 is attached to a printed circuit board 401 having an antenna pattern 101 embedded therein, and is electrically connected to the printed circuit board 401 through wire 102 bonding. Has Such a conventional package structure may receive electromagnetic interference for signal transmission of an antenna from an external device, etc., and it is difficult to expect a fast transmission speed because signal concentration cannot be adjusted because the signal radiation angle of the antenna cannot be adjusted. In addition, the final package thickness due to the wire 102 bonding and the printed circuit board 401 is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire 102 is increased.

도 11은 본 발명의 일 실시예에 따른 반도체 패키지(1000)을 설명하기 위한 단면도이다.11 is a cross-sectional view illustrating a semiconductor package 1000 according to an embodiment of the present invention.

도 11을 참조하면, 본 발명의 일 실시예에 따른 반도체 패키지(1000)는 EMS 안테나 모듈(100), 반도체 칩(200), 제2 봉지재(300), 배선부(400) 및 외부 연결단자(500)를 포함할 수 있다.Referring to FIG. 11, the semiconductor package 1000 according to an exemplary embodiment may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500 may be included.

상기 EMS 안테나 모듈(100)은, 상부 면(111)에 안테나 패턴(113)이 마련되고 상부 면(111)과 하부 면(112)를 관통하여 상기 안테나 패턴(113)과 접속되는 비아홀(114)을 포함하는 기판(110)과, 상기 기판(110)의 상부에 마련되는 제1 봉지재(120)와, 상기 기판(110)과 상기 제1 봉지재(120)를 둘러싸되 상기 안테나 패턴(113)과 이격하여 배치되는 방사각 조절부(130)를 포함할 수 있다. 또한, 비아홀(114)에 접속되어 기판(110)의 하부 면(112)을 따라 연장되는 접속 연장부(115) 및 기판(110)의 상부 면(111)과 하부 면(112) 상에 마련되는 보호층(116)을 더 포함할 수 있다.The EMS antenna module 100 may include a via hole 114 having an antenna pattern 113 formed on an upper surface 111 and penetrating through the upper surface 111 and the lower surface 112 to be connected to the antenna pattern 113. A substrate 110 including the substrate 110, a first encapsulant 120 provided on the substrate 110, and the antenna pattern 113 surrounded by the substrate 110 and the first encapsulant 120. It may include a radial angle control unit 130 spaced apart from). In addition, the connection extension 115 extending along the lower surface 112 of the substrate 110 and connected to the via hole 114 is provided on the upper surface 111 and the lower surface 112 of the substrate 110. The protective layer 116 may be further included.

EMS 안테나 모듈(100)의 안테나 패턴(113)은 비아홀(114)과 접속되어 있으며, 배선부(400)를 통해 반도체 칩(200)의 신호 패드(210)와 전기적으로 연결될 수 있다. 이에 따라 안테나 패턴(113)은 반도체 칩(200)으로부터 신호를 전달받아 전송할 수 있다. 이 때, 기판(110)의 상부에 마련된 제1 봉지재(120)와 반도체 패키지(1000)를 밀봉하는 제2 봉지재(300)는 신호가 투과 가능하며, 방사각 조절부(130)에 의해 신호 방사각도(A, 도 1 참조)를 조절함으로써 신호를 집중시키고 전송속도를 향상시킬 수 있다.The antenna pattern 113 of the EMS antenna module 100 is connected to the via hole 114 and may be electrically connected to the signal pad 210 of the semiconductor chip 200 through the wiring unit 400. Accordingly, the antenna pattern 113 may receive and transmit a signal from the semiconductor chip 200. At this time, the first encapsulant 120 provided on the substrate 110 and the second encapsulant 300 for sealing the semiconductor package 1000 may transmit a signal, and are controlled by the radiation angle controller 130. By adjusting the signal radiation angle A (see FIG. 1), it is possible to concentrate the signal and improve the transmission speed.

또한, EMS 안테나 모듈(100)의 방사각 조절부(130)는 신호 방사각도(A)를 조절함과 동시에, 측면으로 방사되는 신호를 흡수하여 반도체 칩(200) 또는 다른 소자(미도시)에 전자파 간섭(EMI)을 일으키지 않도록 할 수 있다. In addition, the radiation angle adjusting unit 130 of the EMS antenna module 100 adjusts the signal radiation angle A, and simultaneously absorbs the signal radiated to the side to the semiconductor chip 200 or another device (not shown). It is possible to prevent the occurrence of electromagnetic interference (EMI).

반대로, 다른 소자(미도시)로부터 방사되는 전자파 등을 차폐하여 정상적으로 신호를 전송할 수 있도록 전자파 내성(EMS)을 가질 수 있다.On the contrary, electromagnetic wave immunity (EMS) may be provided to shield an electromagnetic wave emitted from another device (not shown) and transmit a signal normally.

반도체 칩(200)은, 예를 들어 집적 회로(Die 또는 IC: Integrated Circuit)일 수 있다. 또는, 상기 반도체 칩(200)은 메모리 칩이거나 로직 칩일 수 있다. 예를 들어, 상기 메모리 칩은 디램(DRAM), 에스램(SRAM), 플래시(flash), 피램(PRAM), 알이램(ReRAM), 에프이램(FeRAM) 또는 엠램(MRAM) 등을 포함할 수 있다. 일 예인 상기 로직 칩은 메모리 칩들을 제어하는 제어기일 수 있다.The semiconductor chip 200 may be, for example, an integrated circuit (Die or IC). Alternatively, the semiconductor chip 200 may be a memory chip or a logic chip. For example, the memory chip may include DRAM, SRAM, flash, PRAM, ReRAM, FeRAM, or MRAM. Can be. As an example, the logic chip may be a controller for controlling memory chips.

도시되지는 않았으나, 반도체 칩(200)은 회로가 형성되는 활성영역을 포함하는 활성면, 그리고 활성면의 반대 면인 비활성면을 가질 수 있다. 활성면에는 외부와 신호를 교환하기 위한 신호 패드(210)가 형성될 수 있다. 이 경우 상기 신호 패드(210)는 상기 반도체 칩(200)과 일체로 형성되며, 신호 패드(210)와 활성면은 동일 평면으로 마련될 수 있다.Although not shown, the semiconductor chip 200 may have an active surface including an active region in which a circuit is formed, and an inactive surface opposite to the active surface. A signal pad 210 may be formed on the active surface for exchanging signals with the outside. In this case, the signal pad 210 may be integrally formed with the semiconductor chip 200, and the signal pad 210 and the active surface may be provided in the same plane.

이와 달리, 반도체 칩과 일체로 형성되는 신호 패드(210)가 아닌 반도체 칩(200)의 일면에 부착되는 범프일 수 있다. 예를 들어, 범프는 구리 필러 범프(Cu pillar bump) 또는 솔더 범프(Solder bump)일 수 있다.Alternatively, the bumps may be attached to one surface of the semiconductor chip 200 instead of the signal pad 210 integrally formed with the semiconductor chip. For example, the bumps may be copper pillar bumps or solder bumps.

신호 패드(210)는 배선부(400)와 전기적으로 연결된다. 신호 패드(210)와 배선부(400)의 연결은 범프 또는 도전성 접착물질에 의할 수 있다. 예를 들어, 금속(납(Pb) 혹은 주석(Sn)을 포함)의 용융재에 의한 솔더 조인트 접합일 수 있다.The signal pad 210 is electrically connected to the wiring unit 400. The connection of the signal pad 210 and the wiring unit 400 may be based on a bump or a conductive adhesive material. For example, it may be solder joint bonding by a molten material of a metal (including lead (Pb) or tin (Sn)).

반도체 칩(200)은 신호 패드(210)가 형성된 활성면이 아래를 향하도록 배치되어 배선부(400)를 마주볼 수 있다. 이 때, 반도체 칩(200)의 활성면과 EMS 안테나 모듈(100)의 하부 면은 동일평면을 형성할 수 있다. 상기 EMS 안테나 모듈(100) 옆에 함께 배치될 수 있고, 상기 배선부(400)와 신호 패드(210)를 통하여 전기적으로 연결된다.The semiconductor chip 200 may be disposed to face the active part on which the signal pad 210 is formed to face downwards. At this time, the active surface of the semiconductor chip 200 and the lower surface of the EMS antenna module 100 may form the same plane. The EMS antenna module 100 may be disposed together, and may be electrically connected to the wiring unit 400 through the signal pad 210.

제2 봉지재(300)는 EMS 안테나 모듈(100) 및 반도체 칩(200)을 일체화하도록 몰딩할 수 있다. 제2 봉지재(300)는 절연물을 포함할 수 있고, 예를 들어 에폭시 몰딩 컴파운드(epoxy mold compound, EMC) 또는 엔캡슐런트(encapsulant)를 포함할 수 있다.The second encapsulant 300 may be molded to integrate the EMS antenna module 100 and the semiconductor chip 200. The second encapsulant 300 may include an insulator and may include, for example, an epoxy mold compound (EMC) or an encapsulant.

제2 봉지재(300)는 유동성이 있는 상태에서 주입된 후 고온 환경에서 경화될 수 있다. 일 예로, 제2 봉지재(300)를 가열함과 동시에 가압하는 과정을 포함할 수 있으며, 이 때 진공 공정을 추가하여 제2 봉지재(300) 내부의 가스 등을 제거할 수 있다. 제2 봉지재(300)가 경화되면서 EMS 안테나 모듈(100) 및 반도체 칩(200)은 일체화되어 하나의 구조체를 이룬다. 제2 봉지재(300)가 밀봉된 이후에 반도체 패키지(1000)는 단면이 직사각형 형상으로 마련될 수 있다.The second encapsulant 300 may be hardened in a high temperature environment after being injected in a fluid state. For example, it may include a step of heating and pressurizing the second encapsulant 300 at the same time, and at this time, a gas may be removed from the second encapsulant 300 by adding a vacuum process. As the second encapsulant 300 is cured, the EMS antenna module 100 and the semiconductor chip 200 are integrated to form a structure. After the second encapsulant 300 is sealed, the semiconductor package 1000 may have a rectangular cross section.

또한, 제2 봉지재(300)는 EMS 안테나 모듈(100)과 반도체 칩(200) 사이에 충진될 수 있다. 또한, 제2 봉지재(300)는 EMS 안테나 모듈(100)과 반도체 칩(200)의 상부와 측면을 둘러싸도록 마련될 수 있다. 따라서 EMS 안테나 모듈(100)과 반도체 칩(200)은 제2 봉지재(300)에 둘러싸여 외부로 노출되지 않을 수 있고, 외부 충격으로부터 보호될 수 있다.In addition, the second encapsulant 300 may be filled between the EMS antenna module 100 and the semiconductor chip 200. In addition, the second encapsulant 300 may be provided to surround the top and side surfaces of the EMS antenna module 100 and the semiconductor chip 200. Therefore, the EMS antenna module 100 and the semiconductor chip 200 may be surrounded by the second encapsulant 300 and may not be exposed to the outside, and may be protected from external impact.

한편, 제2 봉지재(300)는 상기 EMS 안테나 모듈(100)의 제1 봉지재(120)와 동일한 재료일 수 있다.The second encapsulant 300 may be made of the same material as the first encapsulant 120 of the EMS antenna module 100.

배선부(400)는 EMS 안테나 모듈(100)과 반도체 칩(200)의 하부에 위치하여 이들을 전기적으로 연결하며, 후술할 외부 연결단자(500) 또한 전기적으로 연결할 수 있다.The wiring unit 400 is positioned below the EMS antenna module 100 and the semiconductor chip 200 to electrically connect them, and may also electrically connect an external connection terminal 500 to be described later.

배선부(400)는 절연층(410, 430) 및 배선층(420, 440)을 포함한다. 구체적으로, 배선부(400)는 제1 절연층(410), 재배선층(420), 제2 절연층(430) 및 범프 금속층(440)을 포함할 수 있다.The wiring unit 400 includes insulating layers 410 and 430 and wiring layers 420 and 440. In detail, the wiring unit 400 may include a first insulating layer 410, a redistribution layer 420, a second insulating layer 430, and a bump metal layer 440.

예를 들어, 제1 절연층(410)은 EMS 안테나 모듈(100)과 반도체 칩(200) 하부에 배치될 수 있다. 재배선층(420)은 제1 절연층(410)과 제2 절연층(430) 사이에 배치되며, 반도체 칩(200)의 신호 패드(210) 및 EMS 안테나 모듈(100)의 비아홀(114)과 접속될 수 있다. 제2 절연층(430)은 재배선층(420)과 범프 금속층(440) 사이에 배치될 수 있다. 범프 금속층(440)은 재배선층(420)과 접속될 수 있다.For example, the first insulating layer 410 may be disposed under the EMS antenna module 100 and the semiconductor chip 200. The redistribution layer 420 may be disposed between the first insulating layer 410 and the second insulating layer 430, and may include the signal pad 210 of the semiconductor chip 200 and the via hole 114 of the EMS antenna module 100. Can be connected. The second insulating layer 430 may be disposed between the redistribution layer 420 and the bump metal layer 440. The bump metal layer 440 may be connected to the redistribution layer 420.

재배선층(420) 및 범프 금속층(440)은 도전성 물질을 포함하며, 예를 들어 금속을 포함할 수 있다. 예를 들어, 구리(Cu), 알루미늄(Al) 또는 이들의 합금을 포함할 수 있다.The redistribution layer 420 and the bump metal layer 440 may include a conductive material, for example, a metal. For example, copper (Cu), aluminum (Al) or an alloy thereof may be included.

제1 절연층(410) 및 제2 절연층(430)은 유기 또는 무기 절연 물질을 포함할 수 있다. 제1 절연층(410) 및 제2 절연층(430)은, 예를 들어, 에폭시 수지 등의 유기 절연 물질을 포함할 수 있으며, 실리콘 산화물(SiOx), 실리콘 질화물(SiNx) 등의 무기 절연 물질을 포함할 수 있다.The first insulating layer 410 and the second insulating layer 430 may include an organic or inorganic insulating material. The first insulating layer 410 and the second insulating layer 430 may include, for example, an organic insulating material such as an epoxy resin, and an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). It may include.

배선부(400)는 금속배선의 재배치 공정(RDL)으로 형성할 수 있다. 예를 들어, 신호 패드(210)가 형성된 반도체 칩(200)의 일면, 즉 활성면에 포토레지스트(photoresist) 공정과 도금 공정을 이용하여 미세 패턴의 금속배선을 형성할 수 있다. 또한, 제1 절연층(410) 및 제2 절연층(430)은 절연 코팅(Dielectric coating)으로 형성될 수 있다.The wiring unit 400 may be formed by a metallization relocation process (RDL). For example, a metal pattern having a fine pattern may be formed on one surface of the semiconductor chip 200 on which the signal pad 210 is formed, that is, the active surface by using a photoresist process and a plating process. In addition, the first insulating layer 410 and the second insulating layer 430 may be formed of a dielectric coating.

배선부(400)는 상기 반도체 칩(200)을 재배선하여 회로를 형성할 수 있다. 즉, 반도체 칩(200)이 배선부(400)에 의해 재배선됨으로써 반도체 패키지(1000)는 팬-아웃(fan-out) 구조를 가질 수 있다. 따라서 반도체 칩(200)의 입출력 단자를 미세화하는 동시에 입출력 단자의 개수를 증가시킬 수 있다.The wiring unit 400 may rearrange the semiconductor chip 200 to form a circuit. That is, since the semiconductor chip 200 is rearranged by the wiring unit 400, the semiconductor package 1000 may have a fan-out structure. Therefore, the input / output terminals of the semiconductor chip 200 may be miniaturized and the number of input / output terminals may be increased.

외부 연결단자(500)는 범프 금속층(440)에 접속되어 반도체 패키지(1000)와 외부 회로 또는 다른 반도체 패키지(미도시) 등을 전기적으로 연결할 수 있다. The external connection terminal 500 may be connected to the bump metal layer 440 to electrically connect the semiconductor package 1000 to an external circuit or another semiconductor package (not shown).

도면에는 외부 연결단자(500)의 일 예로 솔더 볼(solder ball)을 도시하였지만, 솔더 범프(solder bump)일 수 있고, 솔더 이외의 다른 소재로도 마련될 수 있다.Although a solder ball is illustrated as an example of the external connection terminal 500 in the drawing, it may be a solder bump and may be made of a material other than solder.

또한, 외부 연결단자(500)의 표면에는 유기물 코팅 또는 금속도금 등의 표면처리가 수행되어 표면이 산화되는 것을 방지할 수 있다. 예를 들면, 유기물은 OSP(Organic Solder Preservation) 코팅일 수 있으며, 금속도금은 금(Au), 니켈(Ni), 납(Pb), 또는 실버(Ag) 도금 등으로 처리될 수 있다. In addition, the surface of the external connection terminal 500 may be subjected to surface treatment such as organic coating or metal plating to prevent the surface from being oxidized. For example, the organic material may be an organic solder preservation (OSP) coating, and the metal plating may be treated with gold (Au), nickel (Ni), lead (Pb), silver (Ag) plating, or the like.

도 12 내지 도 18은 본 발명의 일 실시예에 따른 도 11의 반도체 패키지 (1000)를 제조하는 방법을 공정 단계에 따라 설명하기 위한 단면도들이다.12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package 1000 of FIG. 11 according to an embodiment of the present invention according to process steps.

이하, 도 11과 관련하여 이미 설명한 내용과 중복되는 내용은 간략히 하거나 생략하도록 한다.Hereinafter, contents overlapping with those already described with reference to FIG. 11 will be briefly or omitted.

도 12는 제2 캐리어(600) 상에 EMS 안테나 모듈(100)과 반도체 칩(200)을 부착하는 공정을 도시한다.12 illustrates a process of attaching the EMS antenna module 100 and the semiconductor chip 200 on the second carrier 600.

도 12을 참조하면, 제2 캐리어(600) 상에 EMS 안테나 모듈(100)과 반도체 칩(200)을 배치한다. EMS 안테나 모듈(100)과 반도체 칩(200)은 제2 접착층(610)에 의해 제2 캐리어(600)에 고정될 수 있다.Referring to FIG. 12, the EMS antenna module 100 and the semiconductor chip 200 are disposed on the second carrier 600. The EMS antenna module 100 and the semiconductor chip 200 may be fixed to the second carrier 600 by the second adhesive layer 610.

이 때, EMS 안테나 모듈(100)은 제1 봉지재(120)와 방사각 조절부(130)가 위를 향하도록 제2 캐리어(600) 상에 배치되고, 반도체 칩(200)은 신호 패드(210)가 형성된 활성면(미도시)이 아래를 향하도록 제2 캐리어(600) 상에 배치된다. 그리고 EMS 안테나 모듈(100)과 반도체 칩(200)은 서로 떨어지도록 배치될 수 있다.At this time, the EMS antenna module 100 is disposed on the second carrier 600 so that the first encapsulant 120 and the radiation angle adjusting unit 130 face upwards, and the semiconductor chip 200 includes a signal pad ( An active surface (not shown) having the 210 formed thereon is disposed on the second carrier 600 to face downward. The EMS antenna module 100 and the semiconductor chip 200 may be disposed to be spaced apart from each other.

한편, 도면에는 EMS 안테나 모듈(100)과 함께 하나의 반도체 칩(200)이 배치되는 것을 도시하였지만, 이와 달리 설계에 따라 다수의 반도체 칩들이 배치될 수 있다.Meanwhile, although a single semiconductor chip 200 is disposed together with the EMS antenna module 100 in the drawing, alternatively, a plurality of semiconductor chips may be arranged according to a design.

한편, 도면에는 제2 캐리어(600) 상에 하나의 반도체 패키지(1000)가 제조되는 것을 도시하였지만, 이와 달리 제2 캐리어(600) 상에는 소정 간격을 두고 다수의 EMS 안테나 모듈(100)과 반도체 칩(200)들이 부착되어, 한 번의 공정으로 다수의 반도체 패키지(1000)를 동시에 제조할 수 있다.Meanwhile, although one semiconductor package 1000 is manufactured on the second carrier 600 in the drawing, in contrast, on the second carrier 600, a plurality of EMS antenna modules 100 and a semiconductor chip are spaced at predetermined intervals. The 200 may be attached to simultaneously manufacture a plurality of semiconductor packages 1000 in a single process.

제2 캐리어(600)는 EMS 안테나 모듈(100)과 반도체 칩(200)을 지지하기 위한 것으로 강성이 상당하고 열변형이 적은 재질로 마련될 수 있다. 제2 캐리어(600)는 고형(rigid type)의 재료일 수 있으며, 예를 들어, 몰드 성형물 내지 폴리이미드 테이프(polyimide tape) 등의 재료를 사용할 수 있다.The second carrier 600 supports the EMS antenna module 100 and the semiconductor chip 200, and may be formed of a material having considerable rigidity and low thermal deformation. The second carrier 600 may be a material of a solid type. For example, a material such as a mold molding or a polyimide tape may be used.

제2 접착층(610)은 양면 접착필름을 사용할 수 있으며, 일 면이 제2 캐리어(600) 상에 부착되어 고정되고 타 면에 EMS 안테나 모듈(100)과 반도체 칩(200)이 부착될 수 있다.The second adhesive layer 610 may use a double-sided adhesive film, and one surface may be attached and fixed on the second carrier 600, and the EMS antenna module 100 and the semiconductor chip 200 may be attached to the other surface. .

도 13은 제2 봉지재(300)를 몰딩하는 공정을 도시한다.FIG. 13 illustrates a process of molding the second encapsulant 300.

도 13을 참조하면, 제2 봉지재(300)는 제3 캐리어(600)와 상부 금형(미도시) 사이에 유동성이 있는 상태로 주입되어 제2 캐리어(600) 상에 제공될 수 있으며, 상부 금형에 의해 고온 상태에서 압착되어 경화될 수 있다. 제2 봉지재(300)는 EMS 안테나 모듈(100)과 반도체 칩(200)의 상부를 덮고 측면을 둘러싸도록 주입되어, 시간의 경과에 따라 경화되어 일체화된다.Referring to FIG. 13, the second encapsulant 300 may be injected in a state of fluidity between the third carrier 600 and the upper mold (not shown) and provided on the second carrier 600. The mold may be pressed and hardened in a high temperature state. The second encapsulant 300 is injected to cover the upper side of the EMS antenna module 100 and the semiconductor chip 200 and surround the side surface, and is cured and integrated with time.

제2 봉지재(300)를 밀봉하는 방법으로 제2 봉지재(300)가 유동성 있는 상태로 주입되는 것을 설명하였지만, 이와 달리 도포되거나 인쇄되는 등의 방법을 사용할 수 있다. 또한, 봉지재의 몰딩 방법으로 관련 기술분야에서 통상적으로 사용되는 다양한 기술들이 사용될 수 있다.Although the second encapsulant 300 is injected in a fluid state as a method of sealing the second encapsulant 300, a method such as being applied or printed may be used. In addition, various techniques conventionally used in the art may be used as a molding method of the encapsulant.

도 14는 제2 캐리어(600)을 제거하고 제3 캐리어(700)를 부착하는 공정을 도시한다.14 shows a process of removing the second carrier 600 and attaching the third carrier 700.

제2 캐리어(600)을 제거한 후, 제거된 면과 대향하는 면에 제3 캐리어(700)을 부착할 수 있다. 밀봉된 제2 봉지재(300)의 상부 면은 제3 접착층(710)에 의해 제3 캐리어(700)에 고정될 수 있다.After removing the second carrier 600, the third carrier 700 may be attached to a surface facing the removed surface. The upper surface of the sealed second encapsulant 300 may be fixed to the third carrier 700 by the third adhesive layer 710.

제3 캐리어(700)는 제2 캐리어(600)과 동일한 재료일 수 있으며, 제3 접착층(710) 또한 제2 접착층(610)과 동일한 재료일 수 있다.The third carrier 700 may be made of the same material as the second carrier 600, and the third adhesive layer 710 may also be made of the same material as the second adhesive layer 610.

도 15 내지 도 17은 반도체 패키지(1000)의 배선부(400)를 형성하는 재배선 공정 및 외부 연결단자(500)를 부착하는 공정을 도시한다.15 to 17 illustrate a redistribution process of forming the wiring unit 400 of the semiconductor package 1000 and a process of attaching the external connection terminal 500.

도 15를 참조하면, 비아홀(114)의 접속 연장부(115)가 형성된 EMS 반도체 모듈(100)의 일 면과, 신호 패드(210)가 형성된 반도체 칩(200)의 일 면(활성면) 상에 제1 절연층(410)을 형성할 수 있다. 제1 절연층(410)은 절연 물질을 코팅한 후 식각 공정을 통해 접속 연장부(115) 및 신호 패드(210)를 노출할 수 있다.Referring to FIG. 15, one surface of the EMS semiconductor module 100 on which the connection extension 115 of the via hole 114 is formed, and one surface (active surface) of the semiconductor chip 200 on which the signal pad 210 is formed are formed. The first insulating layer 410 may be formed on the substrate. The first insulating layer 410 may coat the insulating material and then expose the connection extension 115 and the signal pad 210 through an etching process.

재배선층(420)은 제1 절연층(410) 상에 형성된다. 재배선층(420)은 노출된 접속 연장부(115) 및 신호 패드(210)와 접속되며, EMS 안테나 모듈(100)과 반도체 칩(200)을 연결한다. 재배선층(420)은 제1 절연층(410) 상에 금속 물질을 코팅한 후, 포토레지스트(photoresist) 공정 등을 거쳐 금속 패턴을 형성할 수 있다. 예를 들어, 재배선층(420)은 일반 도금 공정을 거쳐 코팅될 수 있다. 반도체 칩(200)이 재배선층(420)에 의해 재배선됨으로써 반도체 패키지(1000)는 팬-아웃 구조를 가질 수 있다.The redistribution layer 420 is formed on the first insulating layer 410. The redistribution layer 420 is connected to the exposed connection extension 115 and the signal pad 210 and connects the EMS antenna module 100 and the semiconductor chip 200. The redistribution layer 420 may form a metal pattern through a photoresist process after coating a metal material on the first insulating layer 410. For example, the redistribution layer 420 may be coated through a general plating process. As the semiconductor chip 200 is redistributed by the redistribution layer 420, the semiconductor package 1000 may have a fan-out structure.

도 16을 참조하면, 재배선층(420) 상에 제2 절연층(430)을 형성하고, 제2 절연층(430) 상에 상기 재배선층(420)과 접속된 범프 금속층(440)을 형성한다.Referring to FIG. 16, a second insulating layer 430 is formed on the redistribution layer 420, and a bump metal layer 440 connected to the redistribution layer 420 is formed on the second insulating layer 430. .

제2 절연층(430)은 재배선층(420) 상에 절연 물질을 코팅한 후 식각 공정을 통해 재배선층(420)의 일정한 간격을 갖는 홀(hole)을 노출할 수 있다.The second insulating layer 430 may expose a hole having a predetermined interval of the redistribution layer 420 through an etching process after coating an insulating material on the redistribution layer 420.

범프 금속층(440)은 제2 절연층(430) 상에 형성되며, 노출된 홀을 통해 재배선층(420)과 접속될 수 있다. 범프 금속층(440)은 제2 절연층(430) 상에 금속 물질을 코팅한 후, 포토레지스트(photoresist) 공정 등을 거쳐 형성할 수 있다.The bump metal layer 440 is formed on the second insulating layer 430 and may be connected to the redistribution layer 420 through the exposed hole. The bump metal layer 440 may be formed by coating a metal material on the second insulating layer 430 and then performing a photoresist process.

도 17을 참조하면, 배선부(400)의 범프 금속층(440) 상에 외부 연결단자(500)를 형성한다. 외부 연결단자(500)는 범프 금속층(440)과 접속될 수 있다.Referring to FIG. 17, an external connection terminal 500 is formed on the bump metal layer 440 of the wiring unit 400. The external connection terminal 500 may be connected to the bump metal layer 440.

외부 연결단자(500)는 배선부(400)와 전기적으로 연결되고, 반도체 패키지(1000)가 외부 회로 또는 다른 반도체 패키지(미도시)에 접속되기 위한 매개로 사용될 수 있다. 예를 들어, 상기 외부 연결단자(500)는 일 측이 상기 범프 하부 금속층(24)에 접속되고, 타 측이 외부에 노출될 수 있다.The external connection terminal 500 may be electrically connected to the wiring unit 400, and may be used as a medium for connecting the semiconductor package 1000 to an external circuit or another semiconductor package (not shown). For example, one side of the external connection terminal 500 may be connected to the bump lower metal layer 24, and the other side thereof may be exposed to the outside.

도 18은 제3 캐리어(700)를 제거하는 공정을 도시한다.18 illustrates a process of removing the third carrier 700.

제3 캐리어(700)를 제거할 때, 제3 접착층(710) 역시 동시에 제거될 수 있다.When removing the third carrier 700, the third adhesive layer 710 may also be removed at the same time.

도 19와 도 20은 본 발명의 일 실시예에 따른 반도체 패키지(1000)의 다른 실시예를 설명하기 위한 단면도이다. 본 발명의 다른 실시예에 따른 반도체 패키지(2000, 3000)는 도 11의 반도체 패키지(1000)와 방사각 조절부(130-1, 130-2)의 형상이 다른 것을 제외하고는 나머지 구성이 동일한 바, 중복되는 설명은 간략히 하거나 생략하도록 한다.19 and 20 are cross-sectional views illustrating another example of a semiconductor package 1000 according to an example embodiment. The semiconductor packages 2000 and 3000 according to another exemplary embodiment of the present invention have the same configuration except that the shapes of the semiconductor package 1000 and the radiation angle controllers 130-1 and 130-2 of FIG. 11 are different from each other. Bar overlapping descriptions will be simplified or omitted.

도 19를 참조하면, 본 발명의 다른 실시예에 따른 반도체 패키지(2000)는 EMS 안테나 모듈(100), 반도체 칩(200), 제2 봉지재(300), 배선부(400) 및 외부 연결단자(500)를 포함한다.Referring to FIG. 19, a semiconductor package 2000 according to another embodiment of the present invention may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.

본 실시예는 EMS 안테나 모듈(100)의 방사각 조절부(130-1)의 하부 면이 기판(110)의 하부 면과 동일평면으로 마련되어, 방사각 조절부(130-1)가 배선부(400)와 접속될 수 있다. 방사각 조절부(130-1)의 상하 길이를 EMS 안테나 모듈(100)의 높이와 동일하게 형성하여 배선부(400)에 접지되도록 함으로써, 측면으로 방사된 신호를 흡수하여 노이즈를 감소시킬 수 있다.In this embodiment, the bottom surface of the radiation angle control unit 130-1 of the EMS antenna module 100 is provided in the same plane as the bottom surface of the substrate 110, and the radiation angle control unit 130-1 is connected to the wiring unit ( 400). By forming the upper and lower lengths of the radiation angle adjusting unit 130-1 to be the same as the height of the EMS antenna module 100 to be grounded to the wiring unit 400, the noise emitted to the side can be absorbed to reduce noise. .

배선부(400)에 접지되는 상기 방사각 조절부(130-1)는 EMS 안테나 모듈(100)의 제조 공정 중 요홈(160)을 형성하는 공정에 있어서, 하프소잉(Half Sawing)이 아닌 스트립 기판(110a)의 하부 면까지 모두 절삭하여 형성할 수 있다. 이 때, 제1 봉지재(120)와 일체화된 스트립 기판(110a)을 제1 테이프(150a)를 이용하여 단단히 고정시킬 수 있다.The radiation angle adjusting unit 130-1 grounded to the wiring unit 400 is a strip substrate, not half sawing, in the process of forming the recess 160 during the manufacturing process of the EMS antenna module 100. It can be formed by cutting all to the lower surface of (110a). In this case, the strip substrate 110a integrated with the first encapsulant 120 may be firmly fixed using the first tape 150a.

도 20을 참조하면, 본 발명의 다른 실시예에 따른 반도체 패키지(3000)는 EMS 안테나 모듈(100), 반도체 칩(200), 제2 봉지재(300), 배선부(400) 및 외부 연결단자(500)를 포함한다.Referring to FIG. 20, the semiconductor package 3000 according to another exemplary embodiment may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.

본 실시예는 EMS 안테나 모듈(100)의 방사각 조절부(130-2)가 경사지게 마련될 수 있다. 방사각 조절부(130-2)의 내측면이 경사지도록 형성하여 안테나 패턴(113)의 신호 방사각도(A)를 작게 함으로써, 신호를 집중시킬 수 있고 신호 전송속도를 향상시킬 수 있다.In this embodiment, the radiation angle adjusting unit 130-2 of the EMS antenna module 100 may be inclined. By forming the inner surface of the radiation angle adjusting unit 130-2 to be inclined to reduce the signal radiation angle A of the antenna pattern 113, the signal can be concentrated and the signal transmission speed can be improved.

예를 들어, 방사각 조절부(130-2)는 윗변이 아랫변보다 긴 역사다리꼴 형상이거나, 밑변을 위로, 꼭지점을 아래로 하는 역삼각형 형상일 수 있다. 도면에는 역사다리꼴 형상을 나타내었으나 이에 한정되는 것은 아니며, 안테나의 신호 방사각도(A)가 작아질 수 있는 형상이라면 어떠한 형상이라도 본 발명의 기술적 사상에 포함된다.For example, the radial angle adjusting unit 130-2 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down. The drawing shows an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced.

내측면이 경사지게 마련된 방사각 조절부(130-2)는 EMS 안테나 모듈(100)의 제조 공정 중 요홈(160)을 형성하는 공정에 있어서, 사각형 형상이 아닌 역사다리꼴 또는 역삼각형 형상 등의 요홈(160)을 형성함으로써 형성될 수 있다. 역사다리꼴 또는 역삼각형 형상 등의 요홈(160)은 제1 봉지재(120)와 일체화된 스트립 기판(110a)을 제1 테이프(150a) 상에 마운팅하여 고정시킨 후, 하프소잉(Half Sawing)하여 형성할 수 있다.The radial angle adjusting unit 130-2 having the inner side inclined in the process of forming the groove 160 during the manufacturing process of the EMS antenna module 100 includes a groove such as an inverted triangle or an inverted triangle instead of a rectangular shape. It can be formed by forming 160. The groove 160, such as an inverted triangle or an inverted triangle shape, is fixed by mounting the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and then half sawing. Can be formed.

본 발명은 첨부된 도면에 도시된 일 실시예를 참고로 설명되었으나, 이는 예시적인 것에 불과하며, 당해 기술 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 수 있을 것이다. 따라서 본 발명의 진정한 범위는 첨부된 청구 범위에 의해서만 정해져야 할 것이다.Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, it is merely an example, and those skilled in the art that various modifications and equivalent other embodiments are possible. I can understand. Therefore, the true scope of the invention should be defined only by the appended claims.

Claims (16)

안테나 패턴이 형성된 상부 면과 상기 상부 면에 대향하는 하부 면을 포함하는 기판;A substrate including an upper surface on which an antenna pattern is formed and a lower surface opposite to the upper surface; 상기 기판의 상부 면 상에 마련되는 제1 봉지재; 및A first encapsulant provided on an upper surface of the substrate; And 상기 기판과 상기 제1 봉지재를 둘러싸도록 위치하며 상기 안테나 패턴의 신호 방사각도를 조절하는 방사각 조절부;를 포함하고,And a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material and adjusting a signal radiation angle of the antenna pattern. 상기 방사각 조절부는 상기 안테나 패턴과 이격하도록 배치되는 EMS 안테나 모듈.The EMS antenna module is disposed to be spaced apart from the antenna pattern. 제1항에 있어서,The method of claim 1, 상기 기판은 상기 기판의 상부 면과 하부 면을 관통하는 비아홀을 포함하며,The substrate includes a via hole penetrating the upper and lower surfaces of the substrate, 상기 안테나 패턴은 상기 비아홀을 통해 전기적으로 연결되는 EMS 안테나 모듈.The antenna pattern is EMS antenna module that is electrically connected through the via hole. 제2항에 있어서,The method of claim 2, 상기 비아홀은 상기 비아홀의 하부에서 상기 기판의 하부 면을 따라 연장되는 접속 연장부를 포함하는 EMS 안테나 모듈.The via hole includes an EMS extension module extending from the lower portion of the via hole along the lower surface of the substrate. 제3항에 있어서,The method of claim 3, 상기 기판의 상부 면은 상기 안테나 패턴을 덮는 보호층이 마련되고,The upper surface of the substrate is provided with a protective layer covering the antenna pattern, 상기 기판의 하부 면은 상기 접속 연장부를 덮는 보호층이 마련되는 EMS 안테나 모듈.The lower surface of the substrate is an EMS antenna module is provided with a protective layer covering the connection extension. 제1항에 있어서,The method of claim 1, 상기 방사각 조절부의 상부 면은 상기 제1 봉지재의 상부 면과 동일평면인 EMS 안테나 모듈.The upper surface of the radiation angle control unit EMS antenna module is the same plane as the upper surface of the first encapsulant. 제5항에 있어서,The method of claim 5, 상기 방사각 조절부의 하부 면은 상기 기판의 하부 면과 동일평면인 EMS 안테나 모듈.The lower surface of the radiation angle control unit EMS antenna module is the same plane as the lower surface of the substrate. 제1항에 있어서,The method of claim 1, 상기 방사각 조절부는 상기 안테나 패턴의 신호 방사각도가 작아지도록 내측면이 경사지게 마련되는 EMS 안테나 모듈.EMS antenna module is provided with an inclined inner surface so that the signal radiation angle of the antenna pattern is smaller. 제1 캐리어 상에 안테나 패턴이 마련된 기판을 배치하고,Placing a substrate provided with an antenna pattern on the first carrier, 상기 기판을 제1 봉지재로 밀봉하고,Sealing the substrate with a first encapsulant, 상기 안테나 패턴을 둘러싸되 이격하도록, 제1 봉지재의 상부 면으로부터 요입되는 요홈을 형성하고,To form a groove recessed from the upper surface of the first encapsulant so as to surround the antenna pattern, but spaced apart from, 상기 요홈에 도전 부재를 충전하고,Filling the groove with a conductive member, 상기 도전 부재와 상기 기판을 절삭하여 각각의 모듈로 분리하는 EMS 안테나 모듈의 제조방법.And cutting the conductive member and the substrate into separate modules. 제8항에 있어서,The method of claim 8, 상기 제1 캐리어를 제거하기 전에 상기 제1 봉지재의 상부 면을 그라인딩하는 EMS 안테나 모듈의 제조방법.And grinding the upper surface of the first encapsulant prior to removing the first carrier. 제8항에 있어서,The method of claim 8, 상기 요홈을 형성하기 전에 상기 제1 캐리어가 제거된 면에 제1 테이프를 부착하고,Attaching the first tape to the surface from which the first carrier is removed before forming the groove, 상기 요홈을 형성한 후에 상기 제1 테이프를 제거하는 EMS 안테나 모듈의 제조방법.And removing the first tape after the groove is formed. 제8항에 있어서,The method of claim 8, 상기 도전 부재와 상기 기판을 절삭하기 전에 상기 기판의 하부 면에 제2 테이프를 부착하는 EMS 안테나 모듈의 제조방법.And attaching a second tape to a lower surface of the substrate before cutting the conductive member and the substrate. 상부 면에 안테나 패턴이 형성되고 상기 안테나 패턴과 접속된 비아홀을 포함하는 기판, 상기 기판의 상부에 마련되는 제1 봉지재 및 상기 기판과 상기 제1 봉지재를 둘러싸도록 위치하여 상기 안테나 패턴의 신호 방사각도를 조절하는 방사각 조절부를 포함하는 EMS 안테나 모듈;A substrate having an antenna pattern formed on an upper surface thereof, the substrate including a via hole connected to the antenna pattern, a first encapsulant provided on an upper portion of the substrate, and positioned to surround the substrate and the first encapsulant. EMS antenna module including a radiation angle control unit for adjusting the radiation angle; 반도체 칩;Semiconductor chips; 상기 EMS 안테나 모듈과 상기 반도체 칩을 일체화하도록 몰딩하는 제2 봉지재;A second encapsulant molding the EMS antenna module and the semiconductor chip to be integrated; 상기 EMS 안테나 모듈과 상기 반도체 칩의 하부에 마련되어 상기 EMS 안테나 모듈 및 상기 반도체 칩과 전기적으로 연결되는 배선부; 및A wiring unit provided below the EMS antenna module and the semiconductor chip and electrically connected to the EMS antenna module and the semiconductor chip; And 상기 배선부와 전기적으로 연결되는 외부 연결단자;를 포함하는 반도체 패키지.And an external connection terminal electrically connected to the wiring unit. 제12항에 있어서,The method of claim 12, 상기 배선부는 상기 반도체 칩의 신호 패드와 상기 EMS 안테나 모듈의 비아홀을 노출하는 제1 절연층과, 상기 신호 패드 및 상기 비아홀과 전기적으로 연결되는 재배선층과, 상기 재배선층을 절연하는 제2 절연층과, 상기 재배선층과 전기적으로 연결되는 범프 금속층을 포함하는 반도체 패키지.The wiring part may include a first insulating layer exposing a signal pad of the semiconductor chip and a via hole of the EMS antenna module, a redistribution layer electrically connected to the signal pad and the via hole, and a second insulating layer insulating the redistribution layer. And a bump metal layer electrically connected to the redistribution layer. 제12항에 있어서,The method of claim 12, 상기 제2 봉지재는 상기 제1 봉지재와 동일한 재료인 반도체 패키지.The second encapsulant is a semiconductor package of the same material as the first encapsulant. 제12항에 있어서,The method of claim 12, 상기 방사각 조절부는 상기 기판의 하부로 연장되어 상기 배선부와 접속되는 반도체 패키지.The radiation angle control unit extends under the substrate and is connected to the wiring unit. 제12항에 있어서,The method of claim 12, 상기 방사각 조절부는 상기 안테나 패턴의 신호 방사각도가 작아지도록 내측면이 경사지게 마련되는 반도체 패키지.The radiation angle adjusting unit has a semiconductor package in which the inner surface is inclined so that the signal radiation angle of the antenna pattern is small.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403356A (en) * 2020-04-02 2020-07-10 杭州晶通科技有限公司 A preparation process of a fan-out package structure of a modular antenna
US20220373670A1 (en) * 2021-05-19 2022-11-24 Advanced Semiconductor Engineering, Inc. Semiconductor device package and a method of manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102750379B1 (en) * 2019-11-15 2025-01-09 동우 화인켐 주식회사 Antenna Package
CN117276254B (en) * 2021-06-30 2024-06-28 华为技术有限公司 Antenna structure, antenna module, chip and electronic equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007318469A (en) * 2006-05-26 2007-12-06 Murata Mfg Co Ltd Antenna system and high frequency module
JP2008017421A (en) * 2006-07-10 2008-01-24 Seiko Epson Corp Semiconductor device
JP2009266979A (en) * 2008-04-24 2009-11-12 Shinko Electric Ind Co Ltd Semiconductor device
JP2013026438A (en) * 2011-07-21 2013-02-04 Teramikros Inc Semiconductor device built-in substrate module and method of manufacturing the same
KR20160067961A (en) * 2013-12-09 2016-06-14 인텔 코포레이션 Antenna on ceramics for a packaged die

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007318469A (en) * 2006-05-26 2007-12-06 Murata Mfg Co Ltd Antenna system and high frequency module
JP2008017421A (en) * 2006-07-10 2008-01-24 Seiko Epson Corp Semiconductor device
JP2009266979A (en) * 2008-04-24 2009-11-12 Shinko Electric Ind Co Ltd Semiconductor device
JP2013026438A (en) * 2011-07-21 2013-02-04 Teramikros Inc Semiconductor device built-in substrate module and method of manufacturing the same
KR20160067961A (en) * 2013-12-09 2016-06-14 인텔 코포레이션 Antenna on ceramics for a packaged die

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403356A (en) * 2020-04-02 2020-07-10 杭州晶通科技有限公司 A preparation process of a fan-out package structure of a modular antenna
US20220373670A1 (en) * 2021-05-19 2022-11-24 Advanced Semiconductor Engineering, Inc. Semiconductor device package and a method of manufacturing the same

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